| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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FODM121R1 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
auf Bestellung 2104 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM2701A | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701AR1 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701AR1V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701AR2 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701AR2V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701AV | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701B | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701BR1 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701BR1V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701BR2 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701BR2V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2701BV | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2705R1 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2705R1V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDOutput Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2705R2V | onsemi |
Description: OPTOISO 3.75KV 1CH TRANS 4-SMDOperating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.4V (Max) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM2705V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Box |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM3012R2V-NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM3012R2-NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 250 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM3012-NF098 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMDPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Voltage - Isolation: 3750Vrms Approval Agency: cUR, UR Current - Hold (Ih): 300µA (Typ) Supplier Device Package: 4-SMD Zero Crossing Circuit: No Static dV/dt (Min): 10V/µs (Typ) Current - LED Trigger (Ift) (Max): 5mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 250 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 20999 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3022R1_NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM3022R2-NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDPackage / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3022-NF098 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMDOutput Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tube Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Current - DC Forward (If) (Max): 60 mA Voltage - Off State: 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3023R1_NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM3023R2-NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3023-NF098 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 400 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 10V/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tube |
auf Bestellung 2949 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3052R2V_NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDMounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Obsolete Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 1kV/µs Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR, VDE Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM3052R2-NF098 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 1kV/µs Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3052-NF098 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4SMDStatic dV/dt (Min): 1kV/µs Zero Crossing Circuit: No Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUR, UR Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tube Current - DC Forward (If) (Max): 60 mA Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 10mA |
auf Bestellung 2556 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3053R2-NF098 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Voltage - Isolation: 3750Vrms Approval Agency: cUR, UR Current - Hold (Ih): 300µA (Typ) Supplier Device Package: 4-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 5mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3063R1 | onsemi |
Description: OPTOISOLATOR 3.75KV TRIAC 4MFP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM3083R2 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMDVoltage - Off State: 800 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 600V/µs Zero Crossing Circuit: Yes Current - DC Forward (If) (Max): 60 mA Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUL, UL Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.5V (Max) Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA10N80C-F109 | onsemi |
Description: MOSFET N-CH 800V 10A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA10N80_F109 | onsemi |
Description: MOSFET N-CH 800V 9.8A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA11N90C-F109 | onsemi |
Description: MOSFET N-CH 900V 11A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA11N90-F109 | onsemi |
Description: MOSFET N-CH 900V 11.4A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA13N50CF_F109 | onsemi |
Description: MOSFET N-CH 500V 15A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA13N80-F109 | onsemi |
Description: MOSFET N-CH 800V 12.6A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA28N15_F109 | onsemi |
Description: MOSFET N-CH 150V 33A TO3PN Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA46N15_F109 | onsemi |
Description: MOSFET N-CH 150V 50A TO3PInput Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA5N90_F109 | onsemi |
Description: MOSFET N-CH 900V 5.8A TO3PInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 185W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA6N90C-F109 | onsemi |
Description: MOSFET N-CH 900V 6A TO3PNInput Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA7N80_F109 | onsemi |
Description: MOSFET N-CH 800V 7.2A TO3PInput Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA7N90M_F109 | onsemi |
Description: MOSFET N-CH 900V 7A TO3PInput Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA7N90_F109 | onsemi |
Description: MOSFET N-CH 900V 7.4A TO3POperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA8N80C_F109 | onsemi |
Description: MOSFET N-CH 800V 8.4A TO3PInput Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4.2A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA8N90C-F109 | onsemi |
Description: MOSFET N-CH 900V 8A TO3PNInput Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA90N10V2 | onsemi |
Description: MOSFET N-CH 100V 105A TO3PInput Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 52.5A, 10V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA90N15-F109 | onsemi |
Description: MOSFET N-CH 150V 90A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQA9N90C-F109 | onsemi |
Description: MOSFET N-CH 900V 9A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQD13N10LTM_NBEL001 | onsemi |
Description: MOSFET N-CH 100V 10A DPAKInput Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQD2N80TM_WS | onsemi |
Description: MOSFET N-CH 800V 1.8A DPAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQD3N60CTM-WS | onsemi |
Description: MOSFET N-CH 600V 2.4A DPAKInput Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQD4N25TM-WS | onsemi |
Description: MOSFET N-CH 250V 3A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FQD7P06TM_NB82050 | onsemi |
Description: MOSFET P-CH 60V 5.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FQD8P10TM_SB82052 | onsemi |
Description: MOSFET P-CH 100V 6.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FQN1N60CBU | onsemi |
Description: MOSFET N-CH 600V 300MA TO92-3 Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Ta), 3W (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQP44N10F | onsemi |
Description: MOSFET N-CH 100V 43.5A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQP47P06_NW82049 | onsemi |
Description: MOSFET P-CH 60V 47A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FODM121R1 |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
auf Bestellung 2104 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 23+ | 0.92 EUR |
| 100+ | 0.6 EUR |
| 1000+ | 0.48 EUR |
| 2000+ | 0.44 EUR |
| FODM2701A |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701AR1 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701AR1V |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| FODM2701AR2 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701AR2V |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| FODM2701AV |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701B |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701BR1 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701BR1V |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701BR2 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701BR2V |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM2701BV |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM2705R1 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM2705R1V |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM2705R2V |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SMD
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Description: OPTOISO 3.75KV 1CH TRANS 4-SMD
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM2705V |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM3012R2V-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM3012R2-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 250 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 250 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM3012-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 10V/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 20999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 15+ | 1.48 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.88 EUR |
| 2000+ | 0.83 EUR |
| 5000+ | 0.77 EUR |
| 10000+ | 0.75 EUR |
| FODM3022R1_NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM3022R2-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.95 EUR |
| FODM3022-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.37 EUR |
| 15+ | 1.49 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.84 EUR |
| FODM3023R1_NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM3023R2-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.2 EUR |
| FODM3023-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 400 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 10V/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
auf Bestellung 2949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.12 EUR |
| 11+ | 1.99 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.09 EUR |
| FODM3052R2V_NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Obsolete
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 1kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR, VDE
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Obsolete
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 1kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR, VDE
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FODM3052R2-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 1kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 1kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.24 EUR |
| 5000+ | 1.18 EUR |
| FODM3052-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Static dV/dt (Min): 1kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Description: OPTOISOLATOR 3.75KV TRIAC 4SMD
Static dV/dt (Min): 1kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUR, UR
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
auf Bestellung 2556 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.08 EUR |
| 11+ | 1.95 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.09 EUR |
| 2000+ | 1.04 EUR |
| FODM3053R2-NF098 |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 300µA (Typ)
Supplier Device Package: 4-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.33 EUR |
| 5000+ | 1.27 EUR |
| FODM3063R1 |
![]() |
Hersteller: onsemi
Description: OPTOISOLATOR 3.75KV TRIAC 4MFP
Description: OPTOISOLATOR 3.75KV TRIAC 4MFP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM3083R2 |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Current - DC Forward (If) (Max): 60 mA
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Current - DC Forward (If) (Max): 60 mA
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.2 EUR |
| 5000+ | 1.15 EUR |
| 7500+ | 1.12 EUR |
| 12500+ | 1.09 EUR |
| 17500+ | 1.07 EUR |
| FQA10N80C-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA10N80_F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA11N90C-F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 900V 11A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 900V 11A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA11N90-F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 900V 11.4A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 900V 11.4A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA13N50CF_F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA13N80-F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 800V 12.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 800V 12.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.61 EUR |
| 30+ | 7.22 EUR |
| FQA28N15_F109 |
Hersteller: onsemi
Description: MOSFET N-CH 150V 33A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 150V 33A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| FQA46N15_F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 50A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 150V 50A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA5N90_F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 900V 5.8A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 185W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 900V 5.8A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 185W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA6N90C-F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 900V 6A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 900V 6A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA7N80_F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 800V 7.2A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 800V 7.2A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA7N90M_F109 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 900V 7A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 900V 7A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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| FQA7N90_F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 7.4A TO3P
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 900V 7.4A TO3P
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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| FQA8N80C_F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 8.4A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 800V 8.4A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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| FQA8N90C-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 8A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 900V 8A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8 EUR |
| 10+ | 5.28 EUR |
| FQA90N10V2 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 105A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 52.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 100V 105A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 52.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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| FQA90N15-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 90A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Description: MOSFET N-CH 150V 90A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
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| FQA9N90C-F109 |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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| FQD13N10LTM_NBEL001 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| FQD2N80TM_WS |
Hersteller: onsemi
Description: MOSFET N-CH 800V 1.8A DPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 800V 1.8A DPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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| FQD3N60CTM-WS |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| FQD4N25TM-WS |
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Hersteller: onsemi
Description: MOSFET N-CH 250V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: MOSFET N-CH 250V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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| FQD7P06TM_NB82050 |
Hersteller: onsemi
Description: MOSFET P-CH 60V 5.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
Description: MOSFET P-CH 60V 5.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
Produkt ist nicht verfügbar
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| FQD8P10TM_SB82052 |
Hersteller: onsemi
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Produkt ist nicht verfügbar
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| FQN1N60CBU |
Hersteller: onsemi
Description: MOSFET N-CH 600V 300MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 600V 300MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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| FQP44N10F |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 43.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 43.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| FQP47P06_NW82049 |
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Hersteller: onsemi
Description: MOSFET P-CH 60V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET P-CH 60V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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