| Foto | Bezeichnung | Hersteller | Beschreibung |
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PCA9654EDTR2G | onsemi |
Description: IC XPNDR 100KHZ I2C 16TSSOPNumber of I/O: 8 Interface: I2C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Features: POR Packaging: Cut Tape (CT) Supplier Device Package: 16-TSSOP Interrupt Output: Yes Clock Frequency: 100 kHz Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C DigiKey Programmable: Not Verified Part Status: Active |
auf Bestellung 11297 Stücke: Lieferzeit 10-14 Tag (e) |
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EMI8143MUTAG | onsemi |
Description: CMC 100MA 6LN SMD ESDFeatures: TVS Diode ESD Protection Packaging: Cut Tape (CT) Package / Case: 16-XFDFN Filter Type: Signal Line Size / Dimension: 0.138" L x 0.053" W (3.50mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 6 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 6Ohm (Typ) |
auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD8351XV2T1G | onsemi |
Description: TVS DIODE 3.3VWM 11.2VC SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 11.2V Power Line Protection: No Part Status: Active |
auf Bestellung 1048 Stücke: Lieferzeit 10-14 Tag (e) |
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MBD330DWT1G | onsemi |
Description: RF DIODE SCHOTTKY 30V 120MW SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Diode Type: Schottky - 2 Independent Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Power Dissipation (Max): 120 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBAV99RWT1G | onsemi |
Description: DIODE ARRAY GP 100V 215MA SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
auf Bestellung 1884 Stücke: Lieferzeit 10-14 Tag (e) |
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SMUN5213T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY120T65SPD-F085 | onsemi |
Description: IGBT TRENCH FS 650V 240A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 123 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/102ns Switching Energy: 6.8mJ (on), 3.5mJ (off) Test Condition: 400V, 120A, 5Ohm, 15V Gate Charge: 162 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 378 A Power - Max: 882 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN49103AUC340X | onsemi |
Description: IC REG BCK BST PROG/3.4V 20WLCSPVoltage - Output (Min/Fixed): 2.8V, 3.4V Voltage - Input (Min): 2.5V Voltage - Output (Max): 4V Synchronous Rectifier: Yes Supplier Device Package: 20-WLCSP (1.96x1.56) Topology: Buck-Boost Voltage - Input (Max): 5.5V Frequency - Switching: 1.8MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 2.5A Function: Step-Up/Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable (Fixed) Package / Case: 20-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0170N607L | onsemi |
Description: MOSFET N-CH 60V 300A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0190N807L | onsemi |
Description: MOSFET N-CH 80V 270A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0250N807L | onsemi |
Description: MOSFET N-CH 80V 240A TO263-7Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDB0300N1007L | onsemi |
Description: MOSFET N-CH 100V 200A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDBL86566-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOFQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86380-F085 | onsemi |
Description: MOSFET N-CH 80V 50A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-252AA Qualification: AEC-Q101 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2595UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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S1GHE | onsemi |
Description: DIODE GEN PURP 400V 1A SOD323HEQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-323HE Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 3pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 782 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS13HE | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD323HEPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS14HE | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD323HEPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
auf Bestellung 231000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS16HE | onsemi |
Description: DIODE SCHOTTKY 60V 1A SOD323HEPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3 ns Technology: Schottky Capacitance @ Vr, F: 43pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 772000 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN49103AUC340X | onsemi |
Description: IC REG BCK BST PROG/3.4V 20WLCSPVoltage - Output (Min/Fixed): 2.8V, 3.4V Voltage - Input (Min): 2.5V Voltage - Output (Max): 4V Synchronous Rectifier: Yes Supplier Device Package: 20-WLCSP (1.96x1.56) Topology: Buck-Boost Voltage - Input (Max): 5.5V Frequency - Switching: 1.8MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 2.5A Function: Step-Up/Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable (Fixed) Package / Case: 20-UFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 5295 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0170N607L | onsemi |
Description: MOSFET N-CH 60V 300A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V |
auf Bestellung 1661 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0190N807L | onsemi |
Description: MOSFET N-CH 80V 270A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0250N807L | onsemi |
Description: MOSFET N-CH 80V 240A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0300N1007L | onsemi |
Description: MOSFET N-CH 100V 200A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86566-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 19933 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2595UCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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S1GHE | onsemi |
Description: DIODE GEN PURP 400V 1A SOD323HEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 782 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 131479 Stücke: Lieferzeit 10-14 Tag (e) |
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SS13HE | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD323HEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
auf Bestellung 60454 Stücke: Lieferzeit 10-14 Tag (e) |
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SS14HE | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD323HEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
auf Bestellung 232993 Stücke: Lieferzeit 10-14 Tag (e) |
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SS16HE | onsemi |
Description: DIODE SCHOTTKY 60V 1A SOD323HEPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3 ns Technology: Schottky Capacitance @ Vr, F: 43pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 773869 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1399AADR2G | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 50% Frequency - Switching: 20kHz ~ 750kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V Supplier Device Package: 16-SOIC Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 15.8 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 1N5339WS | onsemi |
Description: DIODE ZENER 5.6V 5W AXIAL Tolerance: ±5% Packaging: Bulk Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 2 Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| 2SK4098FS | onsemi |
Description: MOSFET N-CH 600V 6A TO220F-3FSPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Power Dissipation (Max): 2W Supplier Device Package: TO-220F-3FS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
Produkt ist nicht verfügbar |
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| 2SK4125-1EX | onsemi |
Description: MOSFET N-CH 600V 17A TO3P-3L Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Supplier Device Package: TO-3P-3L Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
Produkt ist nicht verfügbar |
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NRVTSA4100ET3G | onsemi |
Description: DIODE SCHOTTKY 100V 4A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A Current - Reverse Leakage @ Vr: 9 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FGY160T65SPD-F085 | onsemi |
Description: IGBT TRENCH FS 650V 240A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/98ns Switching Energy: 12.4mJ (on), 5.7mJ (off) Test Condition: 400V, 160A, 15V Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 882 W Qualification: AEC-Q101 |
auf Bestellung 22293 Stücke: Lieferzeit 10-14 Tag (e) |
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FNB81060T3 | onsemi |
Description: MODULE SPM 600V 10A 25PWRDIPPackaging: Tube Package / Case: 25-PowerDIP Module (0.815", 20.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 10 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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FODM1007 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 67342 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM1009 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN54511AUCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 63WLCSPPackaging: Tape & Reel (TR) Package / Case: 63-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C, USB Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 63-WLCSP Charge Current - Max: 3.2A Programmable Features: Timer Fault Protection: Over Temperature Voltage - Supply (Max): 13.2V Current - Charging: Constant - Programmable Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FODM1007R2 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FODM1009R2 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM1007R2 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 253 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM1009R2 | onsemi |
Description: OPTOISO 5KV 1CH TRANS LSOP4Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 4791 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86569-F085 | onsemi |
Description: MOSFET N-CH 60V 90A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 13895 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN54005UCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 20WLCSPPackaging: Cut Tape (CT) Package / Case: 20-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C, USB Operating Temperature: -30°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 20-WLCSP (1.96x1.56) Charge Current - Max: 1.45A Programmable Features: Current, Voltage Voltage - Supply (Max): 6V Battery Pack Voltage: 4.5V Current - Charging: Constant - Programmable |
auf Bestellung 529 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0240N100 | onsemi |
Description: MOSFET N-CH 100V 210A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V |
auf Bestellung 6743 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0260N100 | onsemi |
Description: MOSFET N-CH 100V 200A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V |
auf Bestellung 5670 Stücke: Lieferzeit 10-14 Tag (e) |
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FUSB302MPX | onsemi |
Description: IC USB TYPE C CTLR PROGR 14MLPPackaging: Cut Tape (CT) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 25µA Protocol: USB Standards: USB 3.1 Supplier Device Package: 14-MLP (2.5x2.5) Part Status: Not For New Designs DigiKey Programmable: Not Verified |
auf Bestellung 16040 Stücke: Lieferzeit 10-14 Tag (e) |
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HCPL2630SDM | onsemi |
Description: OPTOISO 5KV 2CH OPEN COLL 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 2 Current - Output / Channel: 25 mA |
auf Bestellung 4301 Stücke: Lieferzeit 10-14 Tag (e) |
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HCPL2631SDM | onsemi |
Description: OPTOISO 5KV 2CH OPEN COLL 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 2 Current - Output / Channel: 25 mA |
Produkt ist nicht verfügbar |
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HCPL2731SDM | onsemi |
Description: OPTOISOLATOR 5KV 2CH DARL 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.3V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 500% @ 1.6mA Supplier Device Package: 8-SMD Voltage - Output (Max): 18V Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 20 mA |
auf Bestellung 1317 Stücke: Lieferzeit 10-14 Tag (e) |
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US2MA | onsemi |
Description: DIODE STD 1000V 1.5A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 16081 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH041N65EF-F155 | onsemi |
Description: MOSFET N-CH 650V 76A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 7.6mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V |
auf Bestellung 1258 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSH20120ADN-F155 | onsemi |
Description: DIODE ARR SIC 1200V 10A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH060N80-F155 | onsemi |
Description: MOSFET N-CH 800V 56A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 29A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5.8mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14685 pF @ 100 V |
auf Bestellung 782 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH067N65S3-F155 | onsemi |
Description: MOSFET N-CH 650V 44A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
auf Bestellung 358 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH75T65SQD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 150A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Switching Energy: 760µJ (on), 180µJ (off) Gate Charge: 128 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
auf Bestellung 2073 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH023N65S3-F155 | onsemi |
Description: MOSFET N-CH 650V 75A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V |
auf Bestellung 1378 Stücke: Lieferzeit 10-14 Tag (e) |
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FUSB302BUCX | onsemi |
Description: IC USB TYPE C CTLR PROGR 9WLCSPPackaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 25µA Protocol: USB Standards: USB 3.1 Supplier Device Package: 9-WLCSP (1.21x1.26) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCA9654EDTR2G |
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Hersteller: onsemi
Description: IC XPNDR 100KHZ I2C 16TSSOP
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
Supplier Device Package: 16-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
DigiKey Programmable: Not Verified
Part Status: Active
Description: IC XPNDR 100KHZ I2C 16TSSOP
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
Supplier Device Package: 16-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
DigiKey Programmable: Not Verified
Part Status: Active
auf Bestellung 11297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.29 EUR |
| 10+ | 4.71 EUR |
| 25+ | 4.04 EUR |
| 100+ | 3.28 EUR |
| 250+ | 2.91 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.48 EUR |
| EMI8143MUTAG |
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Hersteller: onsemi
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 16-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.138" L x 0.053" W (3.50mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 16-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.138" L x 0.053" W (3.50mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 16+ | 1.12 EUR |
| 25+ | 1.01 EUR |
| 100+ | 0.89 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.8 EUR |
| ESD8351XV2T1G |
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Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.2VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 11.2VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Part Status: Active
auf Bestellung 1048 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 60+ | 0.3 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| MBD330DWT1G |
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Hersteller: onsemi
Description: RF DIODE SCHOTTKY 30V 120MW SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Power Dissipation (Max): 120 mW
Description: RF DIODE SCHOTTKY 30V 120MW SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Power Dissipation (Max): 120 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 93+ | 0.19 EUR |
| 106+ | 0.17 EUR |
| 124+ | 0.14 EUR |
| 250+ | 0.13 EUR |
| 500+ | 0.12 EUR |
| SBAV99RWT1G |
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Hersteller: onsemi
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 1884 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| SMUN5213T1G |
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Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 90+ | 0.2 EUR |
| 145+ | 0.12 EUR |
| 500+ | 0.088 EUR |
| 1000+ | 0.078 EUR |
| FGY120T65SPD-F085 |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/102ns
Switching Energy: 6.8mJ (on), 3.5mJ (off)
Test Condition: 400V, 120A, 5Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 378 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/102ns
Switching Energy: 6.8mJ (on), 3.5mJ (off)
Test Condition: 400V, 120A, 5Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 378 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.52 EUR |
| 30+ | 15.13 EUR |
| 120+ | 13.07 EUR |
| FAN49103AUC340X |
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Hersteller: onsemi
Description: IC REG BCK BST PROG/3.4V 20WLCSP
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.8MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2.5A
Function: Step-Up/Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable (Fixed)
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG BCK BST PROG/3.4V 20WLCSP
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.8MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2.5A
Function: Step-Up/Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable (Fixed)
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.8 EUR |
| FDB0170N607L |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.97 EUR |
| 1600+ | 2.94 EUR |
| FDB0190N807L |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 4.23 EUR |
| FDB0250N807L |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 240A TO263-7
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Description: MOSFET N-CH 80V 240A TO263-7
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDB0300N1007L |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDBL86566-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 240A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 2.34 EUR |
| FDD86380-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tj)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tj)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.74 EUR |
| 5000+ | 0.69 EUR |
| 7500+ | 0.68 EUR |
| FPF2595UCX |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S1GHE |
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Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A SOD323HE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-323HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 782 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A SOD323HE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-323HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 782 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| 75000+ | 0.13 EUR |
| SS13HE |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| SS14HE |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 231000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| SS16HE |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 772000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| FAN49103AUC340X |
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Hersteller: onsemi
Description: IC REG BCK BST PROG/3.4V 20WLCSP
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.8MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2.5A
Function: Step-Up/Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable (Fixed)
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BCK BST PROG/3.4V 20WLCSP
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 4V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.8MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 2.5A
Function: Step-Up/Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable (Fixed)
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 5295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.69 EUR |
| 15+ | 1.22 EUR |
| 25+ | 1.1 EUR |
| 100+ | 0.97 EUR |
| 250+ | 0.91 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.84 EUR |
| FDB0170N607L |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
auf Bestellung 1661 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.87 EUR |
| 10+ | 5.24 EUR |
| 100+ | 3.75 EUR |
| FDB0190N807L |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.11 EUR |
| 10+ | 7.49 EUR |
| 100+ | 5.44 EUR |
| FDB0250N807L |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.66 EUR |
| 10+ | 6.49 EUR |
| 100+ | 4.7 EUR |
| FDB0300N1007L |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.16 EUR |
| 10+ | 6.86 EUR |
| FDBL86566-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 19933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.34 EUR |
| FPF2595UCX |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| S1GHE |
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Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 131479 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 43+ | 0.42 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| SS13HE |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 60454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| SS14HE |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 232993 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| SS16HE |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 773869 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| NCP1399AADR2G |
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Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.8 V
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.8 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5339WS |
Hersteller: onsemi
Description: DIODE ZENER 5.6V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SK4098FS |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 6A TO220F-3FS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 2W
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Description: MOSFET N-CH 600V 6A TO220F-3FS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 2W
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Produkt ist nicht verfügbar
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| 2SK4125-1EX |
Hersteller: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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| NRVTSA4100ET3G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| FGY160T65SPD-F085 |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 15V
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 15V
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Qualification: AEC-Q101
auf Bestellung 22293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.76 EUR |
| 30+ | 14.64 EUR |
| 120+ | 12.64 EUR |
| 510+ | 12.58 EUR |
| FNB81060T3 |
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Hersteller: onsemi
Description: MODULE SPM 600V 10A 25PWRDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Description: MODULE SPM 600V 10A 25PWRDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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| FODM1007 |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 67342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 26+ | 0.69 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.39 EUR |
| 2000+ | 0.36 EUR |
| 5000+ | 0.34 EUR |
| 10000+ | 0.32 EUR |
| 25000+ | 0.3 EUR |
| FODM1009 |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 27+ | 0.67 EUR |
| FAN54511AUCX |
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Hersteller: onsemi
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.2V
Current - Charging: Constant - Programmable
Part Status: Obsolete
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.2V
Current - Charging: Constant - Programmable
Part Status: Obsolete
Produkt ist nicht verfügbar
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| FODM1007R2 |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FODM1009R2 |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| FODM1007R2 |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.53 EUR |
| FODM1009R2 |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4791 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.41 EUR |
| FDD86569-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 13895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 10+ | 1.96 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.96 EUR |
| FAN54005UCX |
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Hersteller: onsemi
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 20-WLCSP (1.96x1.56)
Charge Current - Max: 1.45A
Programmable Features: Current, Voltage
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.5V
Current - Charging: Constant - Programmable
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 20-WLCSP (1.96x1.56)
Charge Current - Max: 1.45A
Programmable Features: Current, Voltage
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.5V
Current - Charging: Constant - Programmable
auf Bestellung 529 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.45 EUR |
| 10+ | 2.14 EUR |
| 25+ | 1.8 EUR |
| 100+ | 1.42 EUR |
| 250+ | 1.23 EUR |
| 500+ | 1.12 EUR |
| FDBL0240N100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 6743 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.42 EUR |
| 10+ | 7.02 EUR |
| 100+ | 5.2 EUR |
| FDBL0260N100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
auf Bestellung 5670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.32 EUR |
| 10+ | 7.64 EUR |
| 100+ | 5.56 EUR |
| 500+ | 5.32 EUR |
| FUSB302MPX |
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Hersteller: onsemi
Description: IC USB TYPE C CTLR PROGR 14MLP
Packaging: Cut Tape (CT)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-MLP (2.5x2.5)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC USB TYPE C CTLR PROGR 14MLP
Packaging: Cut Tape (CT)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-MLP (2.5x2.5)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 16040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 15+ | 1.2 EUR |
| 25+ | 1.09 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.9 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.83 EUR |
| HCPL2630SDM |
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Hersteller: onsemi
Description: OPTOISO 5KV 2CH OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 25 mA
Description: OPTOISO 5KV 2CH OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 25 mA
auf Bestellung 4301 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.64 EUR |
| 10+ | 2.62 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.74 EUR |
| HCPL2631SDM |
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Hersteller: onsemi
Description: OPTOISO 5KV 2CH OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 25 mA
Description: OPTOISO 5KV 2CH OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2731SDM |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH DARL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 18V
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISOLATOR 5KV 2CH DARL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 18V
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 1317 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.75 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2.09 EUR |
| 500+ | 1.82 EUR |
| US2MA |
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Hersteller: onsemi
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 16081 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| 2000+ | 0.23 EUR |
| FCH041N65EF-F155 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V
Description: MOSFET N-CH 650V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V
auf Bestellung 1258 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.62 EUR |
| 10+ | 16.45 EUR |
| 450+ | 12.32 EUR |
| FFSH20120ADN-F155 |
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Hersteller: onsemi
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.28 EUR |
| 10+ | 15.24 EUR |
| 100+ | 13.18 EUR |
| FCH060N80-F155 |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 29A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14685 pF @ 100 V
Description: MOSFET N-CH 800V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 29A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14685 pF @ 100 V
auf Bestellung 782 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.61 EUR |
| 10+ | 19.68 EUR |
| 450+ | 15.25 EUR |
| FCH067N65S3-F155 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
Description: MOSFET N-CH 650V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.6 EUR |
| 30+ | 6.71 EUR |
| 120+ | 5.64 EUR |
| FGH75T65SQD-F155 |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Switching Energy: 760µJ (on), 180µJ (off)
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Switching Energy: 760µJ (on), 180µJ (off)
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 2073 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.56 EUR |
| 30+ | 6.07 EUR |
| 120+ | 5.08 EUR |
| 510+ | 4.36 EUR |
| 1020+ | 4.34 EUR |
| FCH023N65S3-F155 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V
Description: MOSFET N-CH 650V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.24 EUR |
| 30+ | 12.96 EUR |
| 120+ | 11.15 EUR |
| 510+ | 10.9 EUR |
| FUSB302BUCX |
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Hersteller: onsemi
Description: IC USB TYPE C CTLR PROGR 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 9-WLCSP (1.21x1.26)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB TYPE C CTLR PROGR 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 9-WLCSP (1.21x1.26)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.56 EUR |
























