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FL7760AM6X FL7760AM6X onsemi fl7760-d.pdf Description: IC LED DRV CTRL PWM 1.5A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SOT-23-6
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 60V
Part Status: Active
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NTH027N65S3F-F155 NTH027N65S3F-F155 onsemi nth027n65s3f-d.pdf Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
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NCP1622BECSNT1G NCP1622BECSNT1G onsemi ncp1622-d.pdf Description: IC PFC CTRLR CRM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Startup: 70 µA
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NCP1632DR2G NCP1632DR2G onsemi ncp1632-d.pdf Description: IC PFC CRM 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Mode: Critical Conduction (CRM)
Supplier Device Package: 16-SOIC
Part Status: Active
Current - Startup: 50 µA
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NCP718ASN180T1G NCP718ASN180T1G onsemi ncp718-d.pdf Description: IC REG LIN 1.8V 300MA TSOT-23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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NCP718ASNADJT1G NCP718ASNADJT1G onsemi ncp718-d.pdf Description: IC REG LIN POS ADJ 300MA TSOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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1000+0.48 EUR
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NCP781BMN033TAG NCP781BMN033TAG onsemi ncp781-d.pdf Description: IC REG LINEAR 3.3V 100MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
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NCP781BMN050TAG NCP781BMN050TAG onsemi ncp781-d.pdf Description: IC REG LINEAR 5V 100MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
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NCP81075DR2G NCP81075DR2G onsemi ncp81075-d.pdf Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 7ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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NCP81080MNTBG NCP81080MNTBG onsemi ncp81080-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 5.5V ~ 20V
Input Type: TTL
Supplier Device Package: 8-DFN (2x2)
Rise / Fall Time (Typ): 19ns, 17ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.8V
Current - Peak Output (Source, Sink): 500mA, 800mA
DigiKey Programmable: Not Verified
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NTMFS6H800NT1G NTMFS6H800NT1G onsemi ntmfs6h800n-d.pdf Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
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NTMFS6H801NT1G NTMFS6H801NT1G onsemi ntmfs6h801n-d.pdf Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
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NVMFD5C446NLT1G NVMFD5C446NLT1G onsemi nvmfd5c446nl-d.pdf Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C462NLT1G NVMFD5C462NLT1G onsemi nvmfd5c462nl-d.pdf Description: MOSFET 2N-CH 40V 18A/84A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C650NLT1G NVMFD5C650NLT1G onsemi nvmfd5c650nl-d.pdf Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6H818NWFT1G NVMFS6H818NWFT1G onsemi nvmfs6h818n-d.pdf Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H850NTAG NVTFS6H850NTAG onsemi nvtfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
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TL331VSN4T3G TL331VSN4T3G onsemi tl331-d.pdf Description: IC COMPARATOR 1CH 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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ESDM3051N2T5G ESDM3051N2T5G onsemi esdm3051-d.pdf Description: TVS DIODE 5VWM 8.2VC 2X2DFN
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LB11861MC-W-AH onsemi LB11861MC_May2013.pdf Description: IC FAN MOTOR DRIVER 10MFPSK
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Operating Temperature: -30°C ~ 90°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: Bipolar
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 10-MFPSK
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
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LV58063MCZ-AH LV58063MCZ-AH onsemi LV58063MC_Jul2014.pdf Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 8-SOIC-EP/SOP8L
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 8V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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FCH099N65S3-F155 FCH099N65S3-F155 onsemi FCH099N65S3-D.PDF Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
auf Bestellung 639 Stücke:
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60+9.75 EUR
120+9.01 EUR
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FCP360N65S3R0 FCP360N65S3R0 onsemi FCP360N65S3R0-D.PDF Description: MOSFET N-CH 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
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FCPF250N65S3R0L FCPF250N65S3R0L onsemi fcpf250n65s3r0l-d.pdf Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
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FDB9409L-F085 FDB9409L-F085 onsemi fdb9409l_f085-d.pdf Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDC642P-F085P FDC642P-F085P onsemi fdc642p_f085-d.pdf Description: MOSFET P-CH 20V 4A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD4243-F085P FDD4243-F085P onsemi fdd4243_f085-d.pdf Description: MOSFET P-CH 40V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Qualification: AEC-Q101
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FDD8444-F085P FDD8444-F085P onsemi fdd4685_f085-d.pdf Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Qualification: AEC-Q101
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FDD8445-F085P FDD8445-F085P onsemi FDD8445-F085.pdf Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Qualification: AEC-Q101
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FDD86250-F085 FDD86250-F085 onsemi FDD86250_F085-D.PDF Description: MOSFET N-CH 150V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Qualification: AEC-Q101
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FDD9409L-F085 FDD9409L-F085 onsemi fdd9409l_f085-d.pdf Description: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
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FDWS9508L-F085 FDWS9508L-F085 onsemi FDWS9508L-F085-D.PDF Description: MOSFET P-CH 40V 80A 8PQFN
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FDWS9509L-F085 FDWS9509L-F085 onsemi fdws9509l-f085-d.pdf Description: MOSFET P-CH 40V 65A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 107W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FFSH15120A FFSH15120A onsemi ffsh15120a-d.pdf Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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FGH40T65SQD-F155 FGH40T65SQD-F155 onsemi fgh40t65sqd-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
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FGH40T65UQDF-F155 FGH40T65UQDF-F155 onsemi fgh40t65uqdf-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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FGH75T65SQDT-F155 FGH75T65SQDT-F155 onsemi fgh75t65sqdt-d.pdf Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
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FQB34P10TM-F085P FQB34P10TM-F085P onsemi FQB34P10TM-F085_Rev2_Sep2017.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Produkt ist nicht verfügbar
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FSUSB42UMX-SN00404 FSUSB42UMX-SN00404 onsemi Description: USB SWITCH
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
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MARS1-AR0136AT3-GEVB MARS1-AR0136AT3-GEVB onsemi MARS1%E2%80%90AR0136AT3%E2%80%90GEVB_Web.pdf Description: MARS AR0136AT HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0136AT
Supplied Contents: Board(s)
Part Status: Active
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NCL30060B3DR2G NCL30060B3DR2G onsemi ncl30060-d.pdf Description: IC LED DRIVER OFFL NO 3A 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 3A
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: No
Voltage - Supply (Max): 30V
Produkt ist nicht verfügbar
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NCP1076ABP100G NCP1076ABP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
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NCP1077BBP100G NCP1077BBP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
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100+2.43 EUR
250+2.3 EUR
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NCP145AMX100TCG NCP145AMX100TCG onsemi ncp145-d.pdf Description: IC REG LINEAR 1V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
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NCP145AMX120TCG NCP145AMX120TCG onsemi ncp145-d.pdf Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
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NCP1602ACCSNT1G NCP1602ACCSNT1G onsemi ncp1602-d.pdf Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
Produkt ist nicht verfügbar
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NCP4306DAHZZAASNT1G NCP4306DAHZZAASNT1G onsemi ncp4306-d.pdf Description: IC PM SEC CTRL SYNC RECT 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
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NCV78247DQ0R2G onsemi Description: NCV78247 LED PIXEL LIGHT
Produkt ist nicht verfügbar
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NCV8163AMX180TBG NCV8163AMX180TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
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NCV8163AMX270TBG NCV8163AMX270TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 2.7V 250MA 4-XDFN
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NCV8163AMX280TBG NCV8163AMX280TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 2.8V 250MA 4-XDFN
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NCV8163AMX300TBG NCV8163AMX300TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 3V 250MA 4-XDFN
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NTB082N65S3F NTB082N65S3F onsemi ntb082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
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NTHL040N65S3F NTHL040N65S3F onsemi nthl040n65s3f-d.pdf Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
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NTPF082N65S3F NTPF082N65S3F onsemi ntpf082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
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NVMFS5A140PLZT1G NVMFS5A140PLZT1G onsemi nvmfs5a140plz-d.pdf Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5A140PLZWFT1G NVMFS5A140PLZWFT1G onsemi nvmfs5a140plz-d.pdf Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
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RURD660S9A-F085P RURD660S9A-F085P onsemi rurd660s9a_f085-d.pdf Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 83 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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RURP15100-F085P RURP15100-F085P onsemi rurp15100_f085-d.pdf Description: DIODE STANDARD 1000V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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RURP1560-F085P RURP1560-F085P onsemi rurp1560_f085-d.pdf Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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FL7760AM6X fl7760-d.pdf
FL7760AM6X
Hersteller: onsemi
Description: IC LED DRV CTRL PWM 1.5A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SOT-23-6
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 60V
Part Status: Active
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NTH027N65S3F-F155 nth027n65s3f-d.pdf
NTH027N65S3F-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
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NCP1622BECSNT1G ncp1622-d.pdf
NCP1622BECSNT1G
Hersteller: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Startup: 70 µA
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NCP1632DR2G ncp1632-d.pdf
NCP1632DR2G
Hersteller: onsemi
Description: IC PFC CRM 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Mode: Critical Conduction (CRM)
Supplier Device Package: 16-SOIC
Part Status: Active
Current - Startup: 50 µA
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NCP718ASN180T1G ncp718-d.pdf
NCP718ASN180T1G
Hersteller: onsemi
Description: IC REG LIN 1.8V 300MA TSOT-23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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NCP718ASNADJT1G ncp718-d.pdf
NCP718ASNADJT1G
Hersteller: onsemi
Description: IC REG LIN POS ADJ 300MA TSOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
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21+1.02 EUR
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NCP781BMN033TAG ncp781-d.pdf
NCP781BMN033TAG
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 100MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
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NCP781BMN050TAG ncp781-d.pdf
NCP781BMN050TAG
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
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NCP81075DR2G ncp81075-d.pdf
NCP81075DR2G
Hersteller: onsemi
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 7ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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NCP81080MNTBG ncp81080-d.pdf
NCP81080MNTBG
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 5.5V ~ 20V
Input Type: TTL
Supplier Device Package: 8-DFN (2x2)
Rise / Fall Time (Typ): 19ns, 17ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.8V
Current - Peak Output (Source, Sink): 500mA, 800mA
DigiKey Programmable: Not Verified
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9+2.4 EUR
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NTMFS6H800NT1G ntmfs6h800n-d.pdf
NTMFS6H800NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
auf Bestellung 2368 Stücke:
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NTMFS6H801NT1G ntmfs6h801n-d.pdf
NTMFS6H801NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
auf Bestellung 6462 Stücke:
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NVMFD5C446NLT1G nvmfd5c446nl-d.pdf
NVMFD5C446NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C462NLT1G nvmfd5c462nl-d.pdf
NVMFD5C462NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 18A/84A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFD5C650NLT1G nvmfd5c650nl-d.pdf
NVMFD5C650NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5367 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.69 EUR
10+7.83 EUR
50+6.18 EUR
100+5.64 EUR
500+5.2 EUR
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NVMFS6H818NWFT1G nvmfs6h818n-d.pdf
NVMFS6H818NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1087 Stücke:
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AnzahlPrivatkunde
3+8.21 EUR
10+5.41 EUR
50+4.2 EUR
100+3.82 EUR
500+3.26 EUR
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NVTFS6H850NTAG nvtfs6h850n-d.pdf
NVTFS6H850NTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 27975 Stücke:
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AnzahlPrivatkunde
7+3.37 EUR
10+2.13 EUR
50+1.59 EUR
100+1.43 EUR
500+1.12 EUR
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TL331VSN4T3G tl331-d.pdf
TL331VSN4T3G
Hersteller: onsemi
Description: IC COMPARATOR 1CH 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
auf Bestellung 7782 Stücke:
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AnzahlPrivatkunde
14+1.55 EUR
20+1.09 EUR
25+0.99 EUR
100+0.87 EUR
250+0.81 EUR
500+0.77 EUR
1000+0.74 EUR
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ESDM3051N2T5G esdm3051-d.pdf
ESDM3051N2T5G
Hersteller: onsemi
Description: TVS DIODE 5VWM 8.2VC 2X2DFN
Produkt ist nicht verfügbar
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LB11861MC-W-AH LB11861MC_May2013.pdf
Hersteller: onsemi
Description: IC FAN MOTOR DRIVER 10MFPSK
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Operating Temperature: -30°C ~ 90°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: Bipolar
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 10-MFPSK
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Produkt ist nicht verfügbar
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LV58063MCZ-AH LV58063MC_Jul2014.pdf
LV58063MCZ-AH
Hersteller: onsemi
Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 8-SOIC-EP/SOP8L
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 8V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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FCH099N65S3-F155 FCH099N65S3-D.PDF
FCH099N65S3-F155
Hersteller: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
auf Bestellung 639 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.97 EUR
30+10.63 EUR
60+9.75 EUR
120+9.01 EUR
510+8.51 EUR
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FCP360N65S3R0 FCP360N65S3R0-D.PDF
FCP360N65S3R0
Hersteller: onsemi
Description: MOSFET N-CH 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.59 EUR
10+4.32 EUR
50+3.33 EUR
100+3.01 EUR
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FCPF250N65S3R0L fcpf250n65s3r0l-d.pdf
FCPF250N65S3R0L
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Produkt ist nicht verfügbar
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FDB9409L-F085 fdb9409l_f085-d.pdf
FDB9409L-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDC642P-F085P fdc642p_f085-d.pdf
FDC642P-F085P
Hersteller: onsemi
Description: MOSFET P-CH 20V 4A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD4243-F085P fdd4243_f085-d.pdf
FDD4243-F085P
Hersteller: onsemi
Description: MOSFET P-CH 40V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD8444-F085P fdd4685_f085-d.pdf
FDD8444-F085P
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 153W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD8445-F085P FDD8445-F085.pdf
FDD8445-F085P
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD86250-F085 FDD86250_F085-D.PDF
FDD86250-F085
Hersteller: onsemi
Description: MOSFET N-CH 150V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.71 EUR
Mindestbestellmenge: 2500 Stücke
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FDD9409L-F085 fdd9409l_f085-d.pdf
FDD9409L-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDWS9508L-F085 FDWS9508L-F085-D.PDF
FDWS9508L-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 80A 8PQFN
Produkt ist nicht verfügbar
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FDWS9509L-F085 fdws9509l-f085-d.pdf
FDWS9509L-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 65A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 107W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FFSH15120A ffsh15120a-d.pdf
FFSH15120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.23 EUR
30+12.15 EUR
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FGH40T65SQD-F155 fgh40t65sqd-d.pdf
FGH40T65SQD-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10 EUR
30+5.58 EUR
120+4.62 EUR
Mindestbestellmenge: 3 Stücke
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FGH40T65UQDF-F155 fgh40t65uqdf-d.pdf
FGH40T65UQDF-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
Produkt ist nicht verfügbar
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FGH75T65SQDT-F155 fgh75t65sqdt-d.pdf
FGH75T65SQDT-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
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2+14.08 EUR
30+8.09 EUR
120+6.78 EUR
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FQB34P10TM-F085P FQB34P10TM-F085_Rev2_Sep2017.pdf
FQB34P10TM-F085P
Hersteller: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Produkt ist nicht verfügbar
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FSUSB42UMX-SN00404
FSUSB42UMX-SN00404
Hersteller: onsemi
Description: USB SWITCH
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
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MARS1-AR0136AT3-GEVB MARS1%E2%80%90AR0136AT3%E2%80%90GEVB_Web.pdf
MARS1-AR0136AT3-GEVB
Hersteller: onsemi
Description: MARS AR0136AT HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0136AT
Supplied Contents: Board(s)
Part Status: Active
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1+589.3 EUR
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NCL30060B3DR2G ncl30060-d.pdf
NCL30060B3DR2G
Hersteller: onsemi
Description: IC LED DRIVER OFFL NO 3A 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 3A
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: No
Voltage - Supply (Max): 30V
Produkt ist nicht verfügbar
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NCP1076ABP100G ncp1076a-d.pdf
NCP1076ABP100G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
auf Bestellung 170 Stücke:
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6+3.71 EUR
10+2.74 EUR
50+2.34 EUR
100+2.21 EUR
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NCP1077BBP100G ncp1076a-d.pdf
NCP1077BBP100G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
auf Bestellung 760 Stücke:
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6+4.06 EUR
10+2.99 EUR
50+2.56 EUR
100+2.43 EUR
250+2.3 EUR
500+2.21 EUR
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NCP145AMX100TCG ncp145-d.pdf
NCP145AMX100TCG
Hersteller: onsemi
Description: IC REG LINEAR 1V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
Produkt ist nicht verfügbar
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NCP145AMX120TCG ncp145-d.pdf
NCP145AMX120TCG
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
Produkt ist nicht verfügbar
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NCP1602ACCSNT1G ncp1602-d.pdf
NCP1602ACCSNT1G
Hersteller: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
Produkt ist nicht verfügbar
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NCP4306DAHZZAASNT1G ncp4306-d.pdf
NCP4306DAHZZAASNT1G
Hersteller: onsemi
Description: IC PM SEC CTRL SYNC RECT 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NCV78247DQ0R2G
Hersteller: onsemi
Description: NCV78247 LED PIXEL LIGHT
Produkt ist nicht verfügbar
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NCV8163AMX180TBG ncv8163-d.pdf
NCV8163AMX180TBG
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.3 EUR
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NCV8163AMX270TBG ncv8163-d.pdf
NCV8163AMX270TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.7V 250MA 4-XDFN
Produkt ist nicht verfügbar
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NCV8163AMX280TBG ncv8163-d.pdf
NCV8163AMX280TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 250MA 4-XDFN
Produkt ist nicht verfügbar
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NCV8163AMX300TBG ncv8163-d.pdf
NCV8163AMX300TBG
Hersteller: onsemi
Description: IC REG LINEAR 3V 250MA 4-XDFN
Produkt ist nicht verfügbar
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NTB082N65S3F ntb082n65s3f-d.pdf
NTB082N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
auf Bestellung 9600 Stücke:
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800+8.37 EUR
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NTHL040N65S3F nthl040n65s3f-d.pdf
NTHL040N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
auf Bestellung 337 Stücke:
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1+34.45 EUR
30+21.56 EUR
60+20.03 EUR
120+19.81 EUR
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NTPF082N65S3F ntpf082n65s3f-d.pdf
NTPF082N65S3F
Hersteller: onsemi
Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
auf Bestellung 125 Stücke:
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2+14.68 EUR
50+7.98 EUR
100+7.34 EUR
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NVMFS5A140PLZT1G nvmfs5a140plz-d.pdf
NVMFS5A140PLZT1G
Hersteller: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5A140PLZWFT1G nvmfs5a140plz-d.pdf
NVMFS5A140PLZWFT1G
Hersteller: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RURD660S9A-F085P rurd660s9a_f085-d.pdf
RURD660S9A-F085P
Hersteller: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 83 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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RURP15100-F085P rurp15100_f085-d.pdf
RURP15100-F085P
Hersteller: onsemi
Description: DIODE STANDARD 1000V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 666 Stücke:
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5+5.05 EUR
10+3.25 EUR
50+2.48 EUR
100+2.21 EUR
500+1.77 EUR
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RURP1560-F085P rurp1560_f085-d.pdf
RURP1560-F085P
Hersteller: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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