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CAT5119SDI-50-T3 CAT5119SDI-50-T3 onsemi cat5110-d.pdf Description: IC DGTL POT 50KOHM 32TAP SC70-6
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: Up/Down (U/D, CS)
Configuration: Rheostat
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.7V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 200
Temperature Coefficient (Typ): 200ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
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1SMA30AT3G 1SMA30AT3G onsemi ONSM-S-A0001810294-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 30VWM 48.4VC SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 405pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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ESD3351ST5G onsemi Description: IC ESD PROTECTION SOD-923
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMFS6H824NT1G NTMFS6H824NT1G onsemi ntmfs6h824n-d.pdf Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
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NTMFS6H824NT1G NTMFS6H824NT1G onsemi ntmfs6h824n-d.pdf Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
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NVMFD6H840NLT1G NVMFD6H840NLT1G onsemi nvmfd6h840nl-d.pdf Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD6H840NLT1G NVMFD6H840NLT1G onsemi nvmfd6h840nl-d.pdf Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C470NT1G NVMFD5C470NT1G onsemi nvmfd5c470n-d.pdf Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFD5C470NT1G NVMFD5C470NT1G onsemi nvmfd5c470n-d.pdf Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C446NT1G NVMFD5C446NT1G onsemi nvmfd5c446n-d.pdf Description: MOSFET 2N-CH 40V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 89W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C446NT1G NVMFD5C446NT1G onsemi nvmfd5c446n-d.pdf Description: MOSFET 2N-CH 40V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 89W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C478NLT1G NVMFD5C478NLT1G onsemi nvmfd5c478nl-d.pdf Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFD5C478NLT1G NVMFD5C478NLT1G onsemi nvmfd5c478nl-d.pdf Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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10+3.2 EUR
50+2.44 EUR
100+2.19 EUR
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NVMFD5C462NT1G NVMFD5C462NT1G onsemi nvmfd5c462n-d.pdf Description: MOSFET 2N-CH 40V 17.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C462NT1G NVMFD5C462NT1G onsemi nvmfd5c462n-d.pdf Description: MOSFET 2N-CH 40V 17.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NCP177AMX125TCG NCP177AMX125TCG onsemi ncp177-d.pdf Description: IC REG LINEAR 1.25V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP177AMX125TCG NCP177AMX125TCG onsemi ncp177-d.pdf Description: IC REG LINEAR 1.25V 500MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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70+0.3 EUR
79+0.26 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
2500+0.18 EUR
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NV24M01MUW3VTBG NV24M01MUW3VTBG onsemi nv24m01muw-d.pdf Description: IC EEPROM 1MBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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6000+2.58 EUR
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1N5262B 1N5262B onsemi FAIR-S-A0002355747-1.pdf?t.download=true&u=5oefqw Description: 1N5262 - ZENER DIODE, 51V, 5%, 0
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NTBS2D7N06M7 NTBS2D7N06M7 onsemi ntbs2d7n06m7-d.pdf Description: MOSFET N-CH 60V 110A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
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NTBS2D7N06M7 NTBS2D7N06M7 onsemi ntbs2d7n06m7-d.pdf Description: MOSFET N-CH 60V 110A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
auf Bestellung 1054 Stücke:
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10+10.06 EUR
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ESD5381MUT5G ESD5381MUT5G onsemi esd5381-d.pdf Description: TVS DIODE 3VWM 10.5VC 2X3DFN
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ESD5482MUT5G ESD5482MUT5G onsemi esd5482-d.pdf Description: TVS DIODE 3.3VWM 7.8VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 7.8V
Power Line Protection: No
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ESD5482MUT5G ESD5482MUT5G onsemi esd5482-d.pdf Description: TVS DIODE 3.3VWM 7.8VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 7.8V
Power Line Protection: No
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ESD5481MUT3G onsemi Description: TVS DIODE 5VWM 15VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
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ESD5384NCTBG ESD5384NCTBG onsemi esd5384-d.pdf Description: TVS DIODE 3VWM 9-WLCSP
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ESD5205P6T6G ESD5205P6T6G onsemi esd5205-d.pdf Description: TVS DIODE 5VWM 10VC SOT963
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ESD5205P6T6G ESD5205P6T6G onsemi esd5205-d.pdf Description: TVS DIODE 5VWM 10VC SOT963
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ESD5205P6T6G ESD5205P6T6G onsemi esd5205-d.pdf Description: TVS DIODE 5VWM 10VC SOT963
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ESD5205P6T6G ESD5205P6T6G onsemi esd5205-d.pdf Description: TVS DIODE 5VWM 10VC SOT963
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1N5954BRL 1N5954BRL onsemi ONSMS11851-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER
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1N5954BRLG 1N5954BRLG onsemi ONSMS11851-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER
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TND023MP-AZ onsemi Description: EXPD NCH 2A 60V
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FGA50T65SHD-01 onsemi Description: FGA50T65SHD-01
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
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LC08F00CT-TE-B-H-ON onsemi Description: SWITCHING CONTROLLER
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SZ1SMA5923BT3G SZ1SMA5923BT3G onsemi 1sma5913bt3-d.pdf Description: DIODE ZENER 8.2V 1.5W SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 6.5 V
Qualification: AEC-Q101
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SZ1SMA5923BT3G SZ1SMA5923BT3G onsemi 1sma5913bt3-d.pdf Description: DIODE ZENER 8.2V 1.5W SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 6.5 V
Qualification: AEC-Q101
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NLVVHC1GT50DFT2G NLVVHC1GT50DFT2G onsemi MC74VHC1G50-D.PDF Description: SINGLE NON-INVERTING BUFFER, TTL
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FNB33060T FNB33060T onsemi fnb33060t-d.pdf Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Bulk
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
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SURS8210T3G SURS8210T3G onsemi Description: DIODE GEN PURP 100V 2A SMB
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SURS8210T3G-VF01 SURS8210T3G-VF01 onsemi Description: DIODE GEN PURP 100V 2A SMB
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SURS8210T3G-VF01 SURS8210T3G-VF01 onsemi Description: DIODE GEN PURP 100V 2A SMB
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LA5744-HK-E onsemi ONSMS36233-1.pdf?t.download=true&u=5oefqw Description: IC REG BUCK ADJ 3.1A 2205HK
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 220-5HK
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Obsolete
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NCP1568G03DBR2G NCP1568G03DBR2G onsemi ncp1568-d.pdf Description: IC OFFLINE SW FLYBACK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 79%
Frequency - Switching: 100kHz ~ 1MHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: 16-TSSOP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.2 V
Control Features: Frequency Control, Soft Start
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NCP1568G03DBR2G NCP1568G03DBR2G onsemi ncp1568-d.pdf Description: IC OFFLINE SW FLYBACK 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 79%
Frequency - Switching: 100kHz ~ 1MHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: 16-TSSOP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.2 V
Control Features: Frequency Control, Soft Start
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100+2.43 EUR
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1000+2.14 EUR
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NTLGF3402PT2G NTLGF3402PT2G onsemi ntlgf3402p-d.pdf Description: MOSFET P-CH 20V 2.3A 6DFN
auf Bestellung 117000 Stücke:
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NTLGF3402PT1G NTLGF3402PT1G onsemi ntlgf3402p-d.pdf Description: MOSFET P-CH 20V 2.3A 6DFN
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2SK4065-DL-1E 2SK4065-DL-1E onsemi ONSMS35710-1.pdf?t.download=true&u=ovmfp3 Description: N-CHANNEL POWER MOSFET, 75V, 100
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
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FQD3P50TM-AM002BLT FQD3P50TM-AM002BLT onsemi fqd3p50tm-d.pdf Description: MOSFET P-CH 500V 2.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
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NSV60200LT1G NSV60200LT1G onsemi nss60200l-d.pdf Description: TRANS PNP 60V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 460 mW
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NSV60200LT1G NSV60200LT1G onsemi nss60200l-d.pdf Description: TRANS PNP 60V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 460 mW
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NSV60601MZ4T3G NSV60601MZ4T3G onsemi nss60601mz4-d.pdf Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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NSV60601MZ4T3G NSV60601MZ4T3G onsemi nss60601mz4-d.pdf Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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1000+0.49 EUR
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NSV60600MZ4T1G NSV60600MZ4T1G onsemi nss60600mz4-d.pdf Description: TRANS PNP 60V 6A SOT223
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NSV60100DMTWTBG NSV60100DMTWTBG onsemi nss60100dmt-d.pdf Description: DUAL TRANSISTOR PNP
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NL27WZ02MU1TCG NL27WZ02MU1TCG onsemi NL27WZ02-D.PDF Description: DUAL 2-INPUT NOR GATE
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NCP115ASN120T2G NCP115ASN120T2G onsemi ncp115-d.pdf Description: IC REG LINEAR 1.2V 300MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP115ASN120T2G NCP115ASN120T2G onsemi ncp115-d.pdf Description: IC REG LINEAR 1.2V 300MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 58458 Stücke:
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84+0.25 EUR
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169+0.12 EUR
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1000+0.1 EUR
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BZX79C36-T50A BZX79C36-T50A onsemi bzx79c2v4-d.pdf Description: DIODE ZENER 36V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
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NCP703MX33TCG NCP703MX33TCG onsemi ncp703-d.pdf Description: IC REG LINEAR 3.3V 300MA 6XDFN
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CAT5119SDI-50-T3 cat5110-d.pdf
CAT5119SDI-50-T3
Hersteller: onsemi
Description: IC DGTL POT 50KOHM 32TAP SC70-6
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: Up/Down (U/D, CS)
Configuration: Rheostat
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.7V ~ 5.5V
Taper: Linear
Supplier Device Package: SC-70-6
Resistance - Wiper (Ohms) (Typ): 200
Temperature Coefficient (Typ): 200ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
258+2.31 EUR
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1SMA30AT3G ONSM-S-A0001810294-1.pdf?t.download=true&u=5oefqw
1SMA30AT3G
Hersteller: onsemi
Description: TVS DIODE 30VWM 48.4VC SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 405pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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1297+0.42 EUR
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ESD3351ST5G
Hersteller: onsemi
Description: IC ESD PROTECTION SOD-923
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTMFS6H824NT1G ntmfs6h824n-d.pdf
NTMFS6H824NT1G
Hersteller: onsemi
Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.54 EUR
3000+1.45 EUR
7500+1.4 EUR
10500+1.36 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS6H824NT1G ntmfs6h824n-d.pdf
NTMFS6H824NT1G
Hersteller: onsemi
Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
auf Bestellung 37470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
10+2.68 EUR
100+2.13 EUR
500+1.81 EUR
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NVMFD6H840NLT1G nvmfd6h840nl-d.pdf
NVMFD6H840NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+2.32 EUR
3000+2.18 EUR
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NVMFD6H840NLT1G nvmfd6h840nl-d.pdf
NVMFD6H840NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21010 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.02 EUR
10+4.58 EUR
50+3.53 EUR
100+3.2 EUR
500+2.61 EUR
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NVMFD5C470NT1G nvmfd5c470n-d.pdf
NVMFD5C470NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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NVMFD5C470NT1G nvmfd5c470n-d.pdf
NVMFD5C470NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFD5C446NT1G nvmfd5c446n-d.pdf
NVMFD5C446NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 89W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+3.78 EUR
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NVMFD5C446NT1G nvmfd5c446n-d.pdf
NVMFD5C446NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 89W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.92 EUR
10+6.6 EUR
100+4.71 EUR
500+3.9 EUR
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NVMFD5C478NLT1G nvmfd5c478nl-d.pdf
NVMFD5C478NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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NVMFD5C478NLT1G nvmfd5c478nl-d.pdf
NVMFD5C478NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1033 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.96 EUR
10+3.2 EUR
50+2.44 EUR
100+2.19 EUR
500+1.76 EUR
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NVMFD5C462NT1G nvmfd5c462n-d.pdf
NVMFD5C462NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 17.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 508500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+2.12 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFD5C462NT1G nvmfd5c462n-d.pdf
NVMFD5C462NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 17.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 509400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.47 EUR
10+4.21 EUR
100+2.93 EUR
500+2.38 EUR
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NCP177AMX125TCG ncp177-d.pdf
NCP177AMX125TCG
Hersteller: onsemi
Description: IC REG LINEAR 1.25V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.15 EUR
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NCP177AMX125TCG ncp177-d.pdf
NCP177AMX125TCG
Hersteller: onsemi
Description: IC REG LINEAR 1.25V 500MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 130973 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
70+0.3 EUR
79+0.26 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
2500+0.18 EUR
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NV24M01MUW3VTBG nv24m01muw-d.pdf
NV24M01MUW3VTBG
Hersteller: onsemi
Description: IC EEPROM 1MBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.64 EUR
6000+2.58 EUR
Mindestbestellmenge: 3000 Stücke
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1N5262B FAIR-S-A0002355747-1.pdf?t.download=true&u=5oefqw
1N5262B
Hersteller: onsemi
Description: 1N5262 - ZENER DIODE, 51V, 5%, 0
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15000+0.042 EUR
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NTBS2D7N06M7 ntbs2d7n06m7-d.pdf
NTBS2D7N06M7
Hersteller: onsemi
Description: MOSFET N-CH 60V 110A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Produkt ist nicht verfügbar
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NTBS2D7N06M7 ntbs2d7n06m7-d.pdf
NTBS2D7N06M7
Hersteller: onsemi
Description: MOSFET N-CH 60V 110A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
auf Bestellung 1054 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.05 EUR
10+10.06 EUR
100+7.39 EUR
Mindestbestellmenge: 2 Stücke
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ESD5381MUT5G esd5381-d.pdf
ESD5381MUT5G
Hersteller: onsemi
Description: TVS DIODE 3VWM 10.5VC 2X3DFN
auf Bestellung 14885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5770+0.1 EUR
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ESD5482MUT5G esd5482-d.pdf
ESD5482MUT5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 7.8VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 7.8V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD5482MUT5G esd5482-d.pdf
ESD5482MUT5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 7.8VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 7.8V
Power Line Protection: No
auf Bestellung 2922517 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2597+0.21 EUR
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ESD5481MUT3G
Hersteller: onsemi
Description: TVS DIODE 5VWM 15VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
auf Bestellung 8314234 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4990+0.11 EUR
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ESD5384NCTBG esd5384-d.pdf
ESD5384NCTBG
Hersteller: onsemi
Description: TVS DIODE 3VWM 9-WLCSP
Produkt ist nicht verfügbar
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ESD5205P6T6G esd5205-d.pdf
ESD5205P6T6G
Hersteller: onsemi
Description: TVS DIODE 5VWM 10VC SOT963
Produkt ist nicht verfügbar
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ESD5205P6T6G esd5205-d.pdf
ESD5205P6T6G
Hersteller: onsemi
Description: TVS DIODE 5VWM 10VC SOT963
Produkt ist nicht verfügbar
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ESD5205P6T6G esd5205-d.pdf
ESD5205P6T6G
Hersteller: onsemi
Description: TVS DIODE 5VWM 10VC SOT963
Produkt ist nicht verfügbar
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ESD5205P6T6G esd5205-d.pdf
ESD5205P6T6G
Hersteller: onsemi
Description: TVS DIODE 5VWM 10VC SOT963
Produkt ist nicht verfügbar
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1N5954BRL ONSMS11851-1.pdf?t.download=true&u=5oefqw
1N5954BRL
Hersteller: onsemi
Description: DIODE ZENER
auf Bestellung 3000 Stücke:
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1069+0.51 EUR
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1N5954BRLG ONSMS11851-1.pdf?t.download=true&u=5oefqw
1N5954BRLG
Hersteller: onsemi
Description: DIODE ZENER
auf Bestellung 1442 Stücke:
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AnzahlPrivatkunde
1442+0.38 EUR
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TND023MP-AZ
Hersteller: onsemi
Description: EXPD NCH 2A 60V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
704+0.88 EUR
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FGA50T65SHD-01
Hersteller: onsemi
Description: FGA50T65SHD-01
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
Produkt ist nicht verfügbar
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LC08F00CT-TE-B-H-ON
Hersteller: onsemi
Description: SWITCHING CONTROLLER
auf Bestellung 50000 Stücke:
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AnzahlPrivatkunde
231+2.67 EUR
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SZ1SMA5923BT3G 1sma5913bt3-d.pdf
SZ1SMA5923BT3G
Hersteller: onsemi
Description: DIODE ZENER 8.2V 1.5W SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 6.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZ1SMA5923BT3G 1sma5913bt3-d.pdf
SZ1SMA5923BT3G
Hersteller: onsemi
Description: DIODE ZENER 8.2V 1.5W SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 6.5 V
Qualification: AEC-Q101
auf Bestellung 3999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
20+1.07 EUR
100+0.76 EUR
500+0.61 EUR
1000+0.5 EUR
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NLVVHC1GT50DFT2G MC74VHC1G50-D.PDF
NLVVHC1GT50DFT2G
Hersteller: onsemi
Description: SINGLE NON-INVERTING BUFFER, TTL
Produkt ist nicht verfügbar
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FNB33060T fnb33060t-d.pdf
FNB33060T
Hersteller: onsemi
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Bulk
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
auf Bestellung 185 Stücke:
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1+50.1 EUR
10+36.41 EUR
100+28.85 EUR
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SURS8210T3G
SURS8210T3G
Hersteller: onsemi
Description: DIODE GEN PURP 100V 2A SMB
Produkt ist nicht verfügbar
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SURS8210T3G-VF01
SURS8210T3G-VF01
Hersteller: onsemi
Description: DIODE GEN PURP 100V 2A SMB
Produkt ist nicht verfügbar
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SURS8210T3G-VF01
SURS8210T3G-VF01
Hersteller: onsemi
Description: DIODE GEN PURP 100V 2A SMB
Produkt ist nicht verfügbar
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LA5744-HK-E ONSMS36233-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC REG BUCK ADJ 3.1A 2205HK
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 220-5HK
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Obsolete
auf Bestellung 38242 Stücke:
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AnzahlPrivatkunde
150+3.56 EUR
Mindestbestellmenge: 150 Stücke
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NCP1568G03DBR2G ncp1568-d.pdf
NCP1568G03DBR2G
Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 79%
Frequency - Switching: 100kHz ~ 1MHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: 16-TSSOP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.2 V
Control Features: Frequency Control, Soft Start
Produkt ist nicht verfügbar
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NCP1568G03DBR2G ncp1568-d.pdf
NCP1568G03DBR2G
Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 79%
Frequency - Switching: 100kHz ~ 1MHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: 16-TSSOP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.2 V
Control Features: Frequency Control, Soft Start
auf Bestellung 2343 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.02 EUR
10+2.98 EUR
25+2.71 EUR
100+2.43 EUR
250+2.3 EUR
500+2.21 EUR
1000+2.14 EUR
Mindestbestellmenge: 6 Stücke
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NTLGF3402PT2G ntlgf3402p-d.pdf
NTLGF3402PT2G
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.3A 6DFN
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
760+0.82 EUR
Mindestbestellmenge: 760 Stücke
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NTLGF3402PT1G ntlgf3402p-d.pdf
NTLGF3402PT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.3A 6DFN
auf Bestellung 5200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
740+0.84 EUR
Mindestbestellmenge: 740 Stücke
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2SK4065-DL-1E ONSMS35710-1.pdf?t.download=true&u=ovmfp3
2SK4065-DL-1E
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET, 75V, 100
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
124+4.66 EUR
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FQD3P50TM-AM002BLT fqd3p50tm-d.pdf
FQD3P50TM-AM002BLT
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Produkt ist nicht verfügbar
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NSV60200LT1G nss60200l-d.pdf
NSV60200LT1G
Hersteller: onsemi
Description: TRANS PNP 60V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 460 mW
Produkt ist nicht verfügbar
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NSV60200LT1G nss60200l-d.pdf
NSV60200LT1G
Hersteller: onsemi
Description: TRANS PNP 60V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 460 mW
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
29+0.73 EUR
100+0.43 EUR
500+0.4 EUR
1000+0.27 EUR
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NSV60601MZ4T3G nss60601mz4-d.pdf
NSV60601MZ4T3G
Hersteller: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 364000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.44 EUR
8000+0.42 EUR
12000+0.38 EUR
Mindestbestellmenge: 4000 Stücke
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NSV60601MZ4T3G nss60601mz4-d.pdf
NSV60601MZ4T3G
Hersteller: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 364000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
22+1 EUR
100+0.69 EUR
500+0.57 EUR
1000+0.49 EUR
2000+0.44 EUR
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NSV60600MZ4T1G nss60600mz4-d.pdf
NSV60600MZ4T1G
Hersteller: onsemi
Description: TRANS PNP 60V 6A SOT223
Produkt ist nicht verfügbar
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NSV60100DMTWTBG nss60100dmt-d.pdf
NSV60100DMTWTBG
Hersteller: onsemi
Description: DUAL TRANSISTOR PNP
Produkt ist nicht verfügbar
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NL27WZ02MU1TCG NL27WZ02-D.PDF
NL27WZ02MU1TCG
Hersteller: onsemi
Description: DUAL 2-INPUT NOR GATE
Produkt ist nicht verfügbar
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NCP115ASN120T2G ncp115-d.pdf
NCP115ASN120T2G
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 300MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.092 EUR
6000+0.089 EUR
Mindestbestellmenge: 3000 Stücke
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NCP115ASN120T2G ncp115-d.pdf
NCP115ASN120T2G
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 300MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 58458 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
125+0.17 EUR
143+0.14 EUR
169+0.12 EUR
250+0.11 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 84 Stücke
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BZX79C36-T50A bzx79c2v4-d.pdf
BZX79C36-T50A
Hersteller: onsemi
Description: DIODE ZENER 36V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11538+0.06 EUR
Mindestbestellmenge: 11538 Stücke
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NCP703MX33TCG ncp703-d.pdf
NCP703MX33TCG
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 300MA 6XDFN
auf Bestellung 16165 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
845+0.74 EUR
Mindestbestellmenge: 845 Stücke
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