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SPS1M001A onsemi Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Bulk
Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
auf Bestellung 510 Stücke:
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SPS1M003A onsemi Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 3.917" L x 0.438" W (99.50mm x 11.12mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
Produkt ist nicht verfügbar
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SPS1M003A onsemi Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Bulk
Size / Dimension: 3.917" L x 0.438" W (99.50mm x 11.12mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
auf Bestellung 500 Stücke:
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38+13.39 EUR
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SPS1M002A onsemi SPS1M002_Rev6_Jul2017.PDF Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 3.602" L x 1.043" W (91.50mm x 26.50mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
Produkt ist nicht verfügbar
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SPS1M002A onsemi SPS1M002_Rev6_Jul2017.PDF Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Bulk
Size / Dimension: 3.602" L x 1.043" W (91.50mm x 26.50mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
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XSPS1M001A-05 onsemi Description: QC MOISTURE EPC=05
Produkt ist nicht verfügbar
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NTMFSC004N08MC NTMFSC004N08MC onsemi ntmfsc004n08mc-d.pdf Description: MOSFET N-CH 80V 86A/136A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V
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NTMFSC004N08MC NTMFSC004N08MC onsemi ntmfsc004n08mc-d.pdf Description: MOSFET N-CH 80V 86A/136A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V
auf Bestellung 2868 Stücke:
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10+3.54 EUR
100+2.65 EUR
500+2.36 EUR
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NCV7805BDTRKG-IR01 onsemi Description: LINEAR VOLTAGE REGULATOR, POSITI
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (120Hz)
Voltage Dropout (Max): 2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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CAT24C02YGE-T3 onsemi ONSM-S-A0002809179-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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CAT24C02ZGI CAT24C02ZGI onsemi ONSM-S-A0002809179-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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LV8860V-TLM-H LV8860V-TLM-H onsemi lv8860v?pdf= Description: IC MOTOR DRIVER 6V-34V 16SSOP
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LV8860V-MPB-H LV8860V-MPB-H onsemi ena1818-d.pdf Description: IC MOTOR DRIVER 6V-34V 16SSOP
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SB007-03Q-TL-E SB007-03Q-TL-E onsemi sb007-03q-d.pdf Description: DIODE SCHOTTKY 30V 70MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15 V
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SB007-03Q-TL-E SB007-03Q-TL-E onsemi sb007-03q-d.pdf Description: DIODE SCHOTTKY 30V 70MA 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15 V
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38+0.47 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
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SB007T03C-TB-E SB007T03C-TB-E onsemi Description: DIODE 30V 0.07A
Packaging: Bulk
auf Bestellung 21000 Stücke:
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SB007-03SPA-AC onsemi SNYOD004-82.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 30V 70MA
Packaging: Bulk
auf Bestellung 47500 Stücke:
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SB007W03C-TB-E SB007W03C-TB-E onsemi Description: DIODE
Packaging: Bulk
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SB007T03Q-TL-E onsemi Description: 30 V, 70 MILLI AMP SCHOTTKY BARR
Packaging: Bulk
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SB007W03Q-TL-E onsemi Description: DIODE
Packaging: Bulk
auf Bestellung 15000 Stücke:
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FDMC6683PZ onsemi FDMC6683PZ_RevC3_9-26-13.pdf Description: MOSFET P-CH 20V 40A 8MLP
Produkt ist nicht verfügbar
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NIV6350MT1GEVB onsemi nis6350-d.pdf Description: NIV6350MT1 EVAL BOARD
auf Bestellung 1 Stücke:
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NIS5420MT7TXG NIS5420MT7TXG onsemi nis5420-d.pdf Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
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3000+1.11 EUR
6000+1.07 EUR
9000+1.03 EUR
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NIS5420MT7TXG NIS5420MT7TXG onsemi nis5420-d.pdf Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
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10+2.05 EUR
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500+1.38 EUR
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NIS5420MT5TXG NIS5420MT5TXG onsemi nis5420-d.pdf Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
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NIS5420MT5TXG NIS5420MT5TXG onsemi nis5420-d.pdf Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
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10+2.43 EUR
100+1.96 EUR
500+1.61 EUR
1000+1.33 EUR
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NIS5420MT6TXG NIS5420MT6TXG onsemi nis5420-d.pdf Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+1.23 EUR
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NIS5420MT6TXG NIS5420MT6TXG onsemi nis5420-d.pdf Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 3873 Stücke:
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11+1.72 EUR
100+1.36 EUR
500+1.23 EUR
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NIV6350MT2GEVB NIV6350MT2GEVB onsemi nis6350-d.pdf Description: EVAL BOARD FOR NIV6350MT2
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Utilized IC / Part: NIV6350
Supplied Contents: Board(s)
Primary Attributes: Auto-Retry
Embedded: No
Part Status: Active
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NTLLD4951NFTWG NTLLD4951NFTWG onsemi Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
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NVTFS4823NWFTWG NVTFS4823NWFTWG onsemi nvtfs4823n-d.pdf Description: MOSFET N-CH 30V 13A 8WDFN
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NTHL120N60S5Z NTHL120N60S5Z onsemi nthl120n60s5z-d.pdf Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 11.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2088 pF @ 400 V
auf Bestellung 2963 Stücke:
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2+10.89 EUR
10+7.37 EUR
100+5.37 EUR
500+4.52 EUR
1000+4.51 EUR
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LV8417CS-TE-L-H LV8417CS-TE-L-H onsemi ENA1996-D.PDF Description: IC MOTOR DRIVER 2.7V-5.5V 9WLP
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NDB7050L NDB7050L onsemi NDP7050L.pdf Description: MOSFET N-CH 50V 75A D2PAK
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NDB7050L NDB7050L onsemi NDP7050L.pdf Description: MOSFET N-CH 50V 75A D2PAK
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NDB7060L NDB7060L onsemi NDP7060L,%20NDB7060L.pdf Description: MOSFET N-CH 60V 75A D2PAK
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NDB7050 NDB7050 onsemi NDP7050.pdf Description: MOSFET N-CH 50V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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NDH8447 NDH8447 onsemi NDH8447.pdf Description: MOSFET P-CH 30V 4.4A SUPERSOT8
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NDH8447 NDH8447 onsemi NDH8447.pdf Description: MOSFET P-CH 30V 4.4A SUPERSOT8
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NDH8436 NDH8436 onsemi NDH8436.pdf Description: MOSFET N-CH 30V 5.8A SUPERSOT8
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NDH8436 NDH8436 onsemi NDH8436.pdf Description: MOSFET N-CH 30V 5.8A SUPERSOT8
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2SD1815S-E 2SD1815S-E onsemi en2539-d.pdf Description: TRANS NPN 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 81165 Stücke:
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949+0.54 EUR
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FAN6392MPX onsemi Description: IC USB-PD3.0/PPS CTRLR 24WQFN
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335+1.5 EUR
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FDC5612-G FDC5612-G onsemi Description: MOSFET N-CH 60V SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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2SC5347AE-TD-E 2SC5347AE-TD-E onsemi ena1087-d.pdf Description: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
auf Bestellung 291 Stücke:
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12+1.51 EUR
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NTR1P02LT1H NTR1P02LT1H onsemi ONSMS19747-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL FIELD-EFFECT TRANSI
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IRLM120ATF IRLM120ATF onsemi irlm120a-d.pdf Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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NJVMJB42CT4G NJVMJB42CT4G onsemi mjb41c-d.pdf Description: TRANS PNP 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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NJVMJB42CT4G NJVMJB42CT4G onsemi mjb41c-d.pdf Description: TRANS PNP 100V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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NCP11187A065PG NCP11187A065PG onsemi ncp11184-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.8V ~ 16V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 2.1 V
Control Features: EN
Part Status: Active
Power (Watts): 65 W
auf Bestellung 1900 Stücke:
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25+2.86 EUR
100+2.56 EUR
250+2.43 EUR
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NTBGS2D5N06C NTBGS2D5N06C onsemi ntbgs2d5n06c-d.pdf Description: POWER MOSFET, 60 V, 2.5 M?, 224
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 175µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
Produkt ist nicht verfügbar
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NTBGS2D5N06C NTBGS2D5N06C onsemi ntbgs2d5n06c-d.pdf Description: POWER MOSFET, 60 V, 2.5 M?, 224
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 175µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
auf Bestellung 796 Stücke:
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2+10.21 EUR
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CAT93C76VGI-T3 CAT93C76VGI-T3 onsemi ONSM-S-A0005006884-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 100 ns
Memory Organization: 512 x 16, 1K x 8
DigiKey Programmable: Not Verified
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MUN5116DW1T1G MUN5116DW1T1G onsemi dta143td-d.pdf Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
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MUN5116DW1T1G MUN5116DW1T1G onsemi dta143td-d.pdf Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 3840 Stücke:
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28+0.63 EUR
38+0.47 EUR
100+0.27 EUR
500+0.18 EUR
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NSVMUN5334DW1T1G NSVMUN5334DW1T1G onsemi dtc124xp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5334DW1T1G NSVMUN5334DW1T1G onsemi dtc124xp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5334DW1T1G NSVMUN5334DW1T1G onsemi dtc124xp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
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9000+0.067 EUR
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NSVMUN5111DW1T3G NSVMUN5111DW1T3G onsemi dta114ed-d.pdf Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 70000 Stücke:
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10000+0.075 EUR
20000+0.068 EUR
30000+0.065 EUR
50000+0.061 EUR
70000+0.059 EUR
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NSVMUN5111DW1T3G NSVMUN5111DW1T3G onsemi dta114ed-d.pdf Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 79900 Stücke:
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40+0.44 EUR
66+0.27 EUR
106+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.097 EUR
5000+0.083 EUR
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SPS1M001A
Hersteller: onsemi
Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Bulk
Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
auf Bestellung 510 Stücke:
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38+13.39 EUR
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SPS1M003A
Hersteller: onsemi
Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 3.917" L x 0.438" W (99.50mm x 11.12mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
Produkt ist nicht verfügbar
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SPS1M003A
Hersteller: onsemi
Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Bulk
Size / Dimension: 3.917" L x 0.438" W (99.50mm x 11.12mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
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38+13.39 EUR
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SPS1M002A SPS1M002_Rev6_Jul2017.PDF
Hersteller: onsemi
Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 3.602" L x 1.043" W (91.50mm x 26.50mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
Produkt ist nicht verfügbar
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SPS1M002A SPS1M002_Rev6_Jul2017.PDF
Hersteller: onsemi
Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Bulk
Size / Dimension: 3.602" L x 1.043" W (91.50mm x 26.50mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
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Anzahl Preis
40+11.62 EUR
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XSPS1M001A-05
Hersteller: onsemi
Description: QC MOISTURE EPC=05
Produkt ist nicht verfügbar
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NTMFSC004N08MC ntmfsc004n08mc-d.pdf
NTMFSC004N08MC
Hersteller: onsemi
Description: MOSFET N-CH 80V 86A/136A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFSC004N08MC ntmfsc004n08mc-d.pdf
NTMFSC004N08MC
Hersteller: onsemi
Description: MOSFET N-CH 80V 86A/136A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V
auf Bestellung 2868 Stücke:
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Anzahl Preis
4+4.95 EUR
10+3.54 EUR
100+2.65 EUR
500+2.36 EUR
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NCV7805BDTRKG-IR01
Hersteller: onsemi
Description: LINEAR VOLTAGE REGULATOR, POSITI
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (120Hz)
Voltage Dropout (Max): 2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 2500 Stücke:
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Anzahl Preis
834+1.06 EUR
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CAT24C02YGE-T3 ONSM-S-A0002809179-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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Anzahl Preis
1514+0.3 EUR
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CAT24C02ZGI ONSM-S-A0002809179-1.pdf?t.download=true&u=5oefqw
CAT24C02ZGI
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 5450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1514+0.3 EUR
Mindestbestellmenge: 1514
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LV8860V-TLM-H lv8860v?pdf=
LV8860V-TLM-H
Hersteller: onsemi
Description: IC MOTOR DRIVER 6V-34V 16SSOP
Produkt ist nicht verfügbar
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LV8860V-MPB-H ena1818-d.pdf
LV8860V-MPB-H
Hersteller: onsemi
Description: IC MOTOR DRIVER 6V-34V 16SSOP
Produkt ist nicht verfügbar
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SB007-03Q-TL-E sb007-03q-d.pdf
SB007-03Q-TL-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 70MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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SB007-03Q-TL-E sb007-03q-d.pdf
SB007-03Q-TL-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 70MA 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15 V
auf Bestellung 3928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
38+0.47 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 27
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SB007T03C-TB-E
SB007T03C-TB-E
Hersteller: onsemi
Description: DIODE 30V 0.07A
Packaging: Bulk
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1902+0.26 EUR
Mindestbestellmenge: 1902
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SB007-03SPA-AC SNYOD004-82.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 70MA
Packaging: Bulk
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2959+0.16 EUR
Mindestbestellmenge: 2959
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SB007W03C-TB-E
SB007W03C-TB-E
Hersteller: onsemi
Description: DIODE
Packaging: Bulk
auf Bestellung 276000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2959+0.16 EUR
Mindestbestellmenge: 2959
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SB007T03Q-TL-E
Hersteller: onsemi
Description: 30 V, 70 MILLI AMP SCHOTTKY BARR
Packaging: Bulk
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
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SB007W03Q-TL-E
Hersteller: onsemi
Description: DIODE
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2959+0.16 EUR
Mindestbestellmenge: 2959
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FDMC6683PZ FDMC6683PZ_RevC3_9-26-13.pdf
Hersteller: onsemi
Description: MOSFET P-CH 20V 40A 8MLP
Produkt ist nicht verfügbar
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NIV6350MT1GEVB nis6350-d.pdf
Hersteller: onsemi
Description: NIV6350MT1 EVAL BOARD
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+111.04 EUR
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NIS5420MT7TXG nis5420-d.pdf
NIS5420MT7TXG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.11 EUR
6000+1.07 EUR
9000+1.03 EUR
Mindestbestellmenge: 3000
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NIS5420MT7TXG nis5420-d.pdf
NIS5420MT7TXG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 28182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+2.05 EUR
100+1.63 EUR
500+1.38 EUR
1000+1.17 EUR
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NIS5420MT5TXG nis5420-d.pdf
NIS5420MT5TXG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.24 EUR
6000+1.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NIS5420MT5TXG nis5420-d.pdf
NIS5420MT5TXG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 29177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+2.43 EUR
100+1.96 EUR
500+1.61 EUR
1000+1.33 EUR
Mindestbestellmenge: 7
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NIS5420MT6TXG nis5420-d.pdf
NIS5420MT6TXG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.23 EUR
Mindestbestellmenge: 3000
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NIS5420MT6TXG nis5420-d.pdf
NIS5420MT6TXG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 8V ~ 18V
Accuracy: ±10%
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 10-WDFN (3x3)
Part Status: Active
auf Bestellung 3873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
11+1.72 EUR
100+1.36 EUR
500+1.23 EUR
Mindestbestellmenge: 9
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NIV6350MT2GEVB nis6350-d.pdf
NIV6350MT2GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NIV6350MT2
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Utilized IC / Part: NIV6350
Supplied Contents: Board(s)
Primary Attributes: Auto-Retry
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+101.57 EUR
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NTLLD4951NFTWG
NTLLD4951NFTWG
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
204+2.22 EUR
Mindestbestellmenge: 204
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NVTFS4823NWFTWG nvtfs4823n-d.pdf
NVTFS4823NWFTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A 8WDFN
Produkt ist nicht verfügbar
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NTHL120N60S5Z nthl120n60s5z-d.pdf
NTHL120N60S5Z
Hersteller: onsemi
Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 11.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2088 pF @ 400 V
auf Bestellung 2963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.89 EUR
10+7.37 EUR
100+5.37 EUR
500+4.52 EUR
1000+4.51 EUR
Mindestbestellmenge: 2
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LV8417CS-TE-L-H ENA1996-D.PDF
LV8417CS-TE-L-H
Hersteller: onsemi
Description: IC MOTOR DRIVER 2.7V-5.5V 9WLP
Produkt ist nicht verfügbar
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NDB7050L NDP7050L.pdf
NDB7050L
Hersteller: onsemi
Description: MOSFET N-CH 50V 75A D2PAK
Produkt ist nicht verfügbar
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NDB7050L NDP7050L.pdf
NDB7050L
Hersteller: onsemi
Description: MOSFET N-CH 50V 75A D2PAK
Produkt ist nicht verfügbar
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NDB7060L NDP7060L,%20NDB7060L.pdf
NDB7060L
Hersteller: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Produkt ist nicht verfügbar
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NDB7050 NDP7050.pdf
NDB7050
Hersteller: onsemi
Description: MOSFET N-CH 50V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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NDH8447 NDH8447.pdf
NDH8447
Hersteller: onsemi
Description: MOSFET P-CH 30V 4.4A SUPERSOT8
Produkt ist nicht verfügbar
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NDH8447 NDH8447.pdf
NDH8447
Hersteller: onsemi
Description: MOSFET P-CH 30V 4.4A SUPERSOT8
Produkt ist nicht verfügbar
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NDH8436 NDH8436.pdf
NDH8436
Hersteller: onsemi
Description: MOSFET N-CH 30V 5.8A SUPERSOT8
Produkt ist nicht verfügbar
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NDH8436 NDH8436.pdf
NDH8436
Hersteller: onsemi
Description: MOSFET N-CH 30V 5.8A SUPERSOT8
Produkt ist nicht verfügbar
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2SD1815S-E en2539-d.pdf
2SD1815S-E
Hersteller: onsemi
Description: TRANS NPN 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 81165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
949+0.54 EUR
Mindestbestellmenge: 949
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FAN6392MPX
Hersteller: onsemi
Description: IC USB-PD3.0/PPS CTRLR 24WQFN
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
335+1.5 EUR
Mindestbestellmenge: 335
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FDC5612-G
FDC5612-G
Hersteller: onsemi
Description: MOSFET N-CH 60V SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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2SC5347AE-TD-E ena1087-d.pdf
2SC5347AE-TD-E
Hersteller: onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
Mindestbestellmenge: 12
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NTR1P02LT1H ONSMS19747-1.pdf?t.download=true&u=5oefqw
NTR1P02LT1H
Hersteller: onsemi
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Produkt ist nicht verfügbar
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IRLM120ATF irlm120a-d.pdf
IRLM120ATF
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 3707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
653+0.69 EUR
Mindestbestellmenge: 653
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NJVMJB42CT4G mjb41c-d.pdf
NJVMJB42CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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NJVMJB42CT4G mjb41c-d.pdf
NJVMJB42CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.15 EUR
100+1.46 EUR
Mindestbestellmenge: 6
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NCP11187A065PG ncp11184-d.pdf
NCP11187A065PG
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.8V ~ 16V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 2.1 V
Control Features: EN
Part Status: Active
Power (Watts): 65 W
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+3.12 EUR
25+2.86 EUR
100+2.56 EUR
250+2.43 EUR
500+2.34 EUR
1000+2.27 EUR
Mindestbestellmenge: 5
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NTBGS2D5N06C ntbgs2d5n06c-d.pdf
NTBGS2D5N06C
Hersteller: onsemi
Description: POWER MOSFET, 60 V, 2.5 M?, 224
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 175µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
Produkt ist nicht verfügbar
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NTBGS2D5N06C ntbgs2d5n06c-d.pdf
NTBGS2D5N06C
Hersteller: onsemi
Description: POWER MOSFET, 60 V, 2.5 M?, 224
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 175µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.21 EUR
10+6.89 EUR
100+5.01 EUR
Mindestbestellmenge: 2
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CAT93C76VGI-T3 ONSM-S-A0005006884-1.pdf?t.download=true&u=5oefqw
CAT93C76VGI-T3
Hersteller: onsemi
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 100 ns
Memory Organization: 512 x 16, 1K x 8
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1397+0.32 EUR
Mindestbestellmenge: 1397
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MUN5116DW1T1G dta143td-d.pdf
MUN5116DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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MUN5116DW1T1G dta143td-d.pdf
MUN5116DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
38+0.47 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.14 EUR
Mindestbestellmenge: 28
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NSVMUN5334DW1T1G dtc124xp-d.pdf
NSVMUN5334DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVMUN5334DW1T1G dtc124xp-d.pdf
NSVMUN5334DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVMUN5334DW1T1G dtc124xp-d.pdf
NSVMUN5334DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9000+0.067 EUR
Mindestbestellmenge: 9000
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NSVMUN5111DW1T3G dta114ed-d.pdf
NSVMUN5111DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.075 EUR
20000+0.068 EUR
30000+0.065 EUR
50000+0.061 EUR
70000+0.059 EUR
Mindestbestellmenge: 10000
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NSVMUN5111DW1T3G dta114ed-d.pdf
NSVMUN5111DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 79900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
66+0.27 EUR
106+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.097 EUR
5000+0.083 EUR
Mindestbestellmenge: 40
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