| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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| MC74HC7266AFEL | onsemi |
Description: IC GATE XNOR 4CH 2-INP 14SOIC Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: XNOR (Exclusive NOR) Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL50T65MQDT | onsemi |
 Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 79 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/90ns Switching Energy: 1.19mJ (on), 630µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL50T65MQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 79 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/336ns Switching Energy: 1mJ (on), 850µJ (off) Test Condition: 400V, 50A, 30Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 3809 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSP0465A | onsemi |
Description: SIC DIODE - 650V, 4A, TO-220-2 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSH4065A | onsemi |
Description: DIODE SIL CARB 650V 48A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1989pF @ 1V, 100kHz Current - Average Rectified (Io): 48A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74LVX8051DTR2G | onsemi |
Description: IC MUX 8:1 25OHM 16TSSOP Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 100nA Channel Capacitance (CS(off), CD(off)): 10pF Channel-to-Channel Matching (ΔRon): 8Ohm Multiplexer/Demultiplexer Circuit: 8:1 Voltage - Supply, Single (V+): 2.5V ~ 6V Supplier Device Package: 16-TSSOP -3db Bandwidth: 80MHz On-State Resistance (Max): 25Ohm Operating Temperature: -55°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MC74LVX8051DTR2G | onsemi |
Description: IC MUX 8:1 25OHM 16TSSOP Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 100nA Channel Capacitance (CS(off), CD(off)): 10pF Channel-to-Channel Matching (ΔRon): 8Ohm Multiplexer/Demultiplexer Circuit: 8:1 Voltage - Supply, Single (V+): 2.5V ~ 6V Supplier Device Package: 16-TSSOP -3db Bandwidth: 80MHz On-State Resistance (Max): 25Ohm Operating Temperature: -55°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL40T65MQDT | onsemi |
Description: IGBT TRENCH FS 650V 60A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 86 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/75ns Switching Energy: 880µJ (on), 490µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W |
auf Bestellung 359 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGHL40T65RQDN | onsemi |
Description: IGBT FIELD STOP 650V 46A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 44 ns Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 26ns/77ns Switching Energy: 1.14mJ (on), 740µJ (off) Test Condition: 400V, 40A, 2.5Ohm, 15V Gate Charge: 47 nC Part Status: Active Current - Collector (Ic) (Max): 46 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 288 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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NM24C04EM8 | onsemi |
Description: IC EEPROM 4KBIT I2C 100KHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 100 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Memory Interface: I2C Access Time: 3.5 µs Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 95 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| LV8281VR-TLM-H | onsemi | Description: IC SYSTEM MOTOR DRIVER |
auf Bestellung 92000 Stücke: Lieferzeit 10-14 Tag (e) |
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ATP212-TL-H | onsemi |
Description: MOSFET N-CH 60V 35A ATPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74FST3384DT | onsemi |
Description: BUS DRIVER Packaging: Bulk |
auf Bestellung 5952 Stücke: Lieferzeit 10-14 Tag (e) |
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NB7VPQ904MMUTWG | onsemi |
Description: IC USB TYPE C DISPLAY PORT Packaging: Tape & Reel (TR) Package / Case: 32-XFQFN Exposed Pad Delay Time: 110ps Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Voltage - Supply: 1.71V ~ 1.89V Applications: USB Type C Data Rate (Max): 10Gbps Supplier Device Package: 32-X2QFN (2.85x4.5) Signal Conditioning: Input Equalization Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NB7VPQ904MMUTWG | onsemi |
Description: IC USB TYPE C DISPLAY PORT Packaging: Cut Tape (CT) Package / Case: 32-XFQFN Exposed Pad Delay Time: 110ps Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Voltage - Supply: 1.71V ~ 1.89V Applications: USB Type C Data Rate (Max): 10Gbps Supplier Device Package: 32-X2QFN (2.85x4.5) Signal Conditioning: Input Equalization Part Status: Active |
auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H848NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 13A/59A 5DFN Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 2V @ 70µA Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NVMFS6B75NLWFT1G | onsemi |
Description: MOSFET N-CH 100V 7A/28A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NVMFS6B05NLT3G | onsemi |
Description: MOSFET N-CH 100V 17A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 165W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NVMFS6B25NLWFT3G | onsemi |
Description: MOSFET N-CH 100V 8A/33A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NVMFS6H836NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 16A/77A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 95µA Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FDZ451PZ-P | onsemi | Description: MOSFET P-CH 20V 6WLCSP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NCP45780IMN24RTWG | onsemi |
Description: 780 MCM Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO Supplier Device Package: 12-DFN (3x3) Ratio - Input:Output: 2:1 Current - Output (Max): 20A Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Voltage - Load: 3V ~ 24V Input Type: Non-Inverting Output Configuration: High/Low Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: USB Switch Interface: Logic Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 12-VFDFN Exposed Pad Features: Power Good, Slew Rate Controlled Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP45780IMN24RTWG | onsemi |
Description: 780 MCM Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO Supplier Device Package: 12-DFN (3x3) Ratio - Input:Output: 2:1 Current - Output (Max): 20A Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Voltage - Load: 3V ~ 24V Input Type: Non-Inverting Output Configuration: High/Low Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: USB Switch Interface: Logic Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 12-VFDFN Exposed Pad Features: Power Good, Slew Rate Controlled Packaging: Cut Tape (CT) |
auf Bestellung 3229 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP45770IMN24TWG | onsemi |
Description: 770 MCM Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 3.6mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 24V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: 12-DFN (3x3) Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCP45790IMN24RTWG | onsemi |
Description: SOLITUDE 790 MCM Part Status: Active Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO Supplier Device Package: 14-DFN (4x4) Ratio - Input:Output: 1:1 Current - Output (Max): 8A Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Voltage - Load: 3V ~ 24V Input Type: Non-Inverting Rds On (Typ): 5.6mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 14-VFDFN Exposed Pad Features: Slew Rate Controlled Packaging: Tape & Reel (TR) |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP45760IMN24RTWG | onsemi |
Description: 760 MCM Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 17mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 24V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: 12-DFN (3x3) Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCP51513ABMNTWG | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 19V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 150 V Supplier Device Package: 10-DFN (3x3) Rise / Fall Time (Typ): 9ns, 7ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 2A, 3A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCP51513ABMNTWG | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 19V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 150 V Supplier Device Package: 10-DFN (3x3) Rise / Fall Time (Typ): 9ns, 7ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 2A, 3A DigiKey Programmable: Not Verified |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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SBT10010JST | onsemi |
Description: DIODE SCHOTTKY 100V 10A TO220 Packaging: Bulk |
auf Bestellung 90008 Stücke: Lieferzeit 10-14 Tag (e) |
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SBT100-10G | onsemi |
Description: DIODE ARR SCHOTT 100V 10A TO-220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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NDS0610-PG | onsemi |
Description: MOSFET P-CH 60V SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NDS0610_NL | onsemi |
Description: MOSFET P-CH 60V 120MA SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NCV33163DW2G | onsemi | Description: IC REG BUCK BST ADJ 3.4A 16SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NCP1655ADR2G | onsemi |
Description: MULTI-MODE POWER FACTOR CORRECTI Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 9-SOIC Mode: Continuous Conduction (CCM) Frequency - Switching: 65kHz Voltage - Supply: 8.5V ~ 11.25V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1655ADR2G | onsemi |
Description: MULTI-MODE POWER FACTOR CORRECTI Part Status: Active Supplier Device Package: 9-SOIC Mode: Continuous Conduction (CCM) Frequency - Switching: 65kHz Voltage - Supply: 8.5V ~ 11.25V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Packaging: Cut Tape (CT) |
auf Bestellung 4806 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N60E | onsemi |
Description: MOSFET N-CH 600V 23A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V |
auf Bestellung 1045 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84B7V5LT1 | onsemi |
Description: DIODE ZENER 7.5V 225MW SOT23-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8705 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| CD8447DR2G | onsemi |
Description: IC COMPARATOR QUAD Packaging: Tape & Reel (TR) |
auf Bestellung 77500 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0330CS1C12SPKAH3-GEVB | onsemi |
Description: BOARD EVAL 3.5 MP 1/3" CIS HB Supplied Contents: Board(s) Utilized IC / Part: AR0330CS Sensor Type: Image Sensor Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AR0330CM1C00SHAA0-DP2 | onsemi |
Description: 3 MP 1/3 CIS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NVMTSC1D3N08M7TXG | onsemi |
Description: MOSFET N-CH 80V 46A/348A 8DFNW Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5.1W (Ta), 287W (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8012S | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8012S | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
auf Bestellung 4951 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS034N15MC | onsemi |
Description: PTNG 150V 34MOHM POWERCLIP33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta), 53.6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 70µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8011S-AU01 | onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta), 900mW (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: Powerclip-33 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5995BRL-ON | onsemi |
Description: DIODE ZENER 6.2V 500MW DO204AH Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO–204AH Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 4 V |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTPF190N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tj) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V |
auf Bestellung 945 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD1828 | onsemi |
Description: TRANS NPN DARL 100V 3A TO-220ML Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 20MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
auf Bestellung 613 Stücke: Lieferzeit 10-14 Tag (e) |
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2SJ650 | onsemi |
Description: MOSFET P-CH 60V 12A TO220ML Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Supplier Device Package: TO-220ML Power Dissipation (Max): 2W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 479100 Stücke: Lieferzeit 10-14 Tag (e) |
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SBJ100-04J | onsemi |
Description: DIODE ARR SCHOTT 40V 10A TO220ML Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220ML Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 803 Stücke: Lieferzeit 10-14 Tag (e) |
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SBT80-06J | onsemi |
Description: DIODE ARR SCHOTT 60V 8A TO-220ML Current - Reverse Leakage @ Vr: 100 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220ML Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 64770 Stücke: Lieferzeit 10-14 Tag (e) |
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SBT250-04J | onsemi |
Description: DIODE ARR SCHOTT 40V 25A TO220ML Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 20 V |
auf Bestellung 10185 Stücke: Lieferzeit 10-14 Tag (e) |
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SBT80-04J | onsemi |
Description: DIODE ARR SCHOTT 40V 8A TO-220ML Current - Reverse Leakage @ Vr: 100 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220ML Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 25302 Stücke: Lieferzeit 10-14 Tag (e) |
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SBT80-10JS | onsemi |
Description: DIODE ARR SCHOTT 100V 8A TO220ML Current - Reverse Leakage @ Vr: 100 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220ML Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 18970 Stücke: Lieferzeit 10-14 Tag (e) |
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| LB1934T-TLM-E | onsemi |
Description: SYSTEM MOTOR DRIVER Packaging: Bulk |
auf Bestellung 53682 Stücke: Lieferzeit 10-14 Tag (e) |
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LB1973JA-ZH | onsemi |
Description: IC MTR DRV BIPLR 1.8-7.5V 16SSOP Packaging: Bulk Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.8V ~ 7.5V Applications: Camera Technology: Bipolar Voltage - Load: 1.8V ~ 7.5V Supplier Device Package: 16-SSOP Motor Type - Stepper: Bipolar |
auf Bestellung 5750 Stücke: Lieferzeit 10-14 Tag (e) |
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LB1945H-MPB-E | onsemi |
Description: IC MTRDRV BIPLR 4.75-5.25V 28SOP |
auf Bestellung 1142 Stücke: Lieferzeit 10-14 Tag (e) |
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STR-FAN65004B-GEVB | onsemi |
Description: EVAL BOARD FOR FAN65004B Packaging: Bulk Voltage - Output: 4.57V ~ 5.25V Voltage - Input: 4.5V ~ 65V Current - Output: 6A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: FAN65004B Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STR-FAN65005A-GEVB | onsemi |
Description: EVAL BOARD FOR FAN65005A Packaging: Bulk Voltage - Output: 4.57V ~ 5.25V Voltage - Input: 4.5V ~ 65V Current - Output: 8A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: FAN65005A Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STR-FAN65004C-GEVB | onsemi |
Description: EVAL BOARD FOR FAN65004C Packaging: Bulk Voltage - Output: 4.57V ~ 5.25V Voltage - Input: 4.5V ~ 65V Current - Output: 6A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: FAN65004C Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC74HC7266AFEL |
Hersteller: onsemi
Description: IC GATE XNOR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE XNOR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1010+ | 0.54 EUR |
| FGHL50T65MQDT |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/90ns
Switching Energy: 1.19mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/90ns
Switching Energy: 1.19mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.16 EUR |
| 30+ | 6.34 EUR |
| 120+ | 5.28 EUR |
| 510+ | 4.5 EUR |
| FGHL50T65MQDTL4 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/336ns
Switching Energy: 1mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 30Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/336ns
Switching Energy: 1mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 30Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 3809 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.42 EUR |
| 10+ | 9.03 EUR |
| 450+ | 5.55 EUR |
| 900+ | 5.19 EUR |
| 1350+ | 4.78 EUR |
| FFSP0465A |
|
Hersteller: onsemi
Description: SIC DIODE - 650V, 4A, TO-220-2
Description: SIC DIODE - 650V, 4A, TO-220-2
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 198+ | 3.18 EUR |
| FFSH4065A |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 31.61 EUR |
| 30+ | 19.62 EUR |
| 120+ | 17.2 EUR |
| MC74LVX8051DTR2G |
|
Hersteller: onsemi
Description: IC MUX 8:1 25OHM 16TSSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF
Channel-to-Channel Matching (ΔRon): 8Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 2.5V ~ 6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 80MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC MUX 8:1 25OHM 16TSSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF
Channel-to-Channel Matching (ΔRon): 8Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 2.5V ~ 6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 80MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74LVX8051DTR2G |
|
Hersteller: onsemi
Description: IC MUX 8:1 25OHM 16TSSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF
Channel-to-Channel Matching (ΔRon): 8Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 2.5V ~ 6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 80MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC MUX 8:1 25OHM 16TSSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF
Channel-to-Channel Matching (ΔRon): 8Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 2.5V ~ 6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 80MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 15+ | 1.4 EUR |
| 25+ | 1.17 EUR |
| FGHL40T65MQDT |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/75ns
Switching Energy: 880µJ (on), 490µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/75ns
Switching Energy: 880µJ (on), 490µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
auf Bestellung 359 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.56 EUR |
| 30+ | 5.37 EUR |
| 120+ | 4.44 EUR |
| AFGHL40T65RQDN |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/77ns
Switching Energy: 1.14mJ (on), 740µJ (off)
Test Condition: 400V, 40A, 2.5Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 288 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT FIELD STOP 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/77ns
Switching Energy: 1.14mJ (on), 740µJ (off)
Test Condition: 400V, 40A, 2.5Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 288 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.52 EUR |
| 30+ | 6.57 EUR |
| 120+ | 5.49 EUR |
| NM24C04EM8 |
|
Hersteller: onsemi
Description: IC EEPROM 4KBIT I2C 100KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 100KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| LV8281VR-TLM-H |
Hersteller: onsemi
Description: IC SYSTEM MOTOR DRIVER
Description: IC SYSTEM MOTOR DRIVER
auf Bestellung 92000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 366+ | 1.61 EUR |
| ATP212-TL-H |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 35A ATPAK
Description: MOSFET N-CH 60V 35A ATPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74FST3384DT |
|
auf Bestellung 5952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1210+ | 0.48 EUR |
| NB7VPQ904MMUTWG |
|
Hersteller: onsemi
Description: IC USB TYPE C DISPLAY PORT
Packaging: Tape & Reel (TR)
Package / Case: 32-XFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB Type C
Data Rate (Max): 10Gbps
Supplier Device Package: 32-X2QFN (2.85x4.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: IC USB TYPE C DISPLAY PORT
Packaging: Tape & Reel (TR)
Package / Case: 32-XFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB Type C
Data Rate (Max): 10Gbps
Supplier Device Package: 32-X2QFN (2.85x4.5)
Signal Conditioning: Input Equalization
Part Status: Active
Produkt ist nicht verfügbar
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| NB7VPQ904MMUTWG |
|
Hersteller: onsemi
Description: IC USB TYPE C DISPLAY PORT
Packaging: Cut Tape (CT)
Package / Case: 32-XFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB Type C
Data Rate (Max): 10Gbps
Supplier Device Package: 32-X2QFN (2.85x4.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: IC USB TYPE C DISPLAY PORT
Packaging: Cut Tape (CT)
Package / Case: 32-XFQFN Exposed Pad
Delay Time: 110ps
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 1.71V ~ 1.89V
Applications: USB Type C
Data Rate (Max): 10Gbps
Supplier Device Package: 32-X2QFN (2.85x4.5)
Signal Conditioning: Input Equalization
Part Status: Active
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.52 EUR |
| 10+ | 5.62 EUR |
| 100+ | 3.97 EUR |
| NVMFS6H848NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Description: MOSFET N-CH 80V 13A/59A 5DFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar
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| NVMFS6B75NLWFT1G |
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 7A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| NVMFS6B05NLT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| NVMFS6B25NLWFT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H836NLWFT1G |
Hersteller: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 16A/77A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| FDZ451PZ-P |
Hersteller: onsemi
Description: MOSFET P-CH 20V 6WLCSP
Description: MOSFET P-CH 20V 6WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP45780IMN24RTWG |
|
Hersteller: onsemi
Description: 780 MCM
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
Supplier Device Package: 12-DFN (3x3)
Ratio - Input:Output: 2:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 24V
Input Type: Non-Inverting
Output Configuration: High/Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: Logic
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 12-VFDFN Exposed Pad
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Description: 780 MCM
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
Supplier Device Package: 12-DFN (3x3)
Ratio - Input:Output: 2:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 24V
Input Type: Non-Inverting
Output Configuration: High/Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: Logic
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 12-VFDFN Exposed Pad
Features: Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.13 EUR |
| NCP45780IMN24RTWG |
|
Hersteller: onsemi
Description: 780 MCM
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
Supplier Device Package: 12-DFN (3x3)
Ratio - Input:Output: 2:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 24V
Input Type: Non-Inverting
Output Configuration: High/Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: Logic
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 12-VFDFN Exposed Pad
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: 780 MCM
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
Supplier Device Package: 12-DFN (3x3)
Ratio - Input:Output: 2:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 24V
Input Type: Non-Inverting
Output Configuration: High/Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: Logic
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 12-VFDFN Exposed Pad
Features: Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 3229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.27 EUR |
| 10+ | 3.17 EUR |
| 25+ | 2.89 EUR |
| 100+ | 2.58 EUR |
| 250+ | 2.44 EUR |
| 500+ | 2.37 EUR |
| NCP45770IMN24TWG |
|
Hersteller: onsemi
Description: 770 MCM
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Description: 770 MCM
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NCP45790IMN24RTWG |
|
Hersteller: onsemi
Description: SOLITUDE 790 MCM
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Supplier Device Package: 14-DFN (4x4)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 24V
Input Type: Non-Inverting
Rds On (Typ): 5.6mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-VFDFN Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Description: SOLITUDE 790 MCM
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Supplier Device Package: 14-DFN (4x4)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 24V
Input Type: Non-Inverting
Rds On (Typ): 5.6mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-VFDFN Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 3.52 EUR |
| NCP45760IMN24RTWG |
|
Hersteller: onsemi
Description: 760 MCM
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 17mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Description: 760 MCM
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 17mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| NCP51513ABMNTWG |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 19V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 9ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 19V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 9ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NCP51513ABMNTWG |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 19V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 9ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 19V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 9ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 12+ | 1.75 EUR |
| 25+ | 1.58 EUR |
| 100+ | 1.4 EUR |
| SBT10010JST |
auf Bestellung 90008 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 956+ | 0.57 EUR |
| SBT100-10G |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 288+ | 1.9 EUR |
| NDS0610-PG |
Hersteller: onsemi
Description: MOSFET P-CH 60V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Description: MOSFET P-CH 60V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDS0610_NL |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 120MA SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Description: MOSFET P-CH 60V 120MA SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV33163DW2G |
Hersteller: onsemi
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
Description: IC REG BUCK BST ADJ 3.4A 16SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1655ADR2G |
|
Hersteller: onsemi
Description: MULTI-MODE POWER FACTOR CORRECTI
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 9-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 65kHz
Voltage - Supply: 8.5V ~ 11.25V
Description: MULTI-MODE POWER FACTOR CORRECTI
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 9-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 65kHz
Voltage - Supply: 8.5V ~ 11.25V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.56 EUR |
| NCP1655ADR2G |
|
Hersteller: onsemi
Description: MULTI-MODE POWER FACTOR CORRECTI
Part Status: Active
Supplier Device Package: 9-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 65kHz
Voltage - Supply: 8.5V ~ 11.25V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Packaging: Cut Tape (CT)
Description: MULTI-MODE POWER FACTOR CORRECTI
Part Status: Active
Supplier Device Package: 9-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 65kHz
Voltage - Supply: 8.5V ~ 11.25V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Packaging: Cut Tape (CT)
auf Bestellung 4806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.18 EUR |
| 10+ | 3.34 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.89 EUR |
| FCP165N60E |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
Description: MOSFET N-CH 600V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.23 EUR |
| 10+ | 6.14 EUR |
| 100+ | 4.39 EUR |
| 800+ | 3.47 EUR |
| BZX84B7V5LT1 |
|
Hersteller: onsemi
Description: DIODE ZENER 7.5V 225MW SOT23-3
Description: DIODE ZENER 7.5V 225MW SOT23-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 8705 Stücke
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| CD8447DR2G |
auf Bestellung 77500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2273+ | 0.46 EUR |
| AR0330CS1C12SPKAH3-GEVB |
|
Hersteller: onsemi
Description: BOARD EVAL 3.5 MP 1/3" CIS HB
Supplied Contents: Board(s)
Utilized IC / Part: AR0330CS
Sensor Type: Image Sensor
Packaging: Bulk
Description: BOARD EVAL 3.5 MP 1/3" CIS HB
Supplied Contents: Board(s)
Utilized IC / Part: AR0330CS
Sensor Type: Image Sensor
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0330CM1C00SHAA0-DP2 |
|
Hersteller: onsemi
Description: 3 MP 1/3 CIS
Description: 3 MP 1/3 CIS
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMTSC1D3N08M7TXG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 4.69 EUR |
| FDPC8012S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.92 EUR |
| FDPC8012S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
auf Bestellung 4951 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.91 EUR |
| 10+ | 4.77 EUR |
| 100+ | 3.5 EUR |
| 500+ | 2.94 EUR |
| 1000+ | 2.92 EUR |
| NTTFS034N15MC |
|
Hersteller: onsemi
Description: PTNG 150V 34MOHM POWERCLIP33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 70µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Description: PTNG 150V 34MOHM POWERCLIP33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 70µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.44 EUR |
| FDPC8011S-AU01 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta), 900mW (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: Powerclip-33
Part Status: Active
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta), 900mW (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: Powerclip-33
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.61 EUR |
| 1N5995BRL-ON |
|
Hersteller: onsemi
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO–204AH
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO–204AH
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11539+ | 0.06 EUR |
| NTPF190N65S3H |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.25 EUR |
| 50+ | 5.37 EUR |
| 100+ | 4.9 EUR |
| 500+ | 4.08 EUR |
| 2SD1828 |
|
Hersteller: onsemi
Description: TRANS NPN DARL 100V 3A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 20MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN DARL 100V 3A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 20MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 613 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 613+ | 1.12 EUR |
| 2SJ650 |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A TO220ML
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: TO-220ML
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET P-CH 60V 12A TO220ML
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: TO-220ML
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 479100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 740+ | 0.82 EUR |
| SBJ100-04J |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 40V 10A TO220ML
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220ML
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: DIODE ARR SCHOTT 40V 10A TO220ML
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220ML
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 803 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 606+ | 1 EUR |
| SBT80-06J |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 60V 8A TO-220ML
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220ML
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: DIODE ARR SCHOTT 60V 8A TO-220ML
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220ML
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 64770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 252+ | 2.18 EUR |
| SBT250-04J |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 40V 25A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
Description: DIODE ARR SCHOTT 40V 25A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
auf Bestellung 10185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 154+ | 3.57 EUR |
| SBT80-04J |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 40V 8A TO-220ML
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220ML
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: DIODE ARR SCHOTT 40V 8A TO-220ML
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220ML
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 25302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 260+ | 2.13 EUR |
| SBT80-10JS |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220ML
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220ML
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 18970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 263+ | 2.08 EUR |
| LB1934T-TLM-E |
auf Bestellung 53682 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 3.19 EUR |
| LB1973JA-ZH |
|
Hersteller: onsemi
Description: IC MTR DRV BIPLR 1.8-7.5V 16SSOP
Packaging: Bulk
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7.5V
Applications: Camera
Technology: Bipolar
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Bipolar
Description: IC MTR DRV BIPLR 1.8-7.5V 16SSOP
Packaging: Bulk
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.8V ~ 7.5V
Applications: Camera
Technology: Bipolar
Voltage - Load: 1.8V ~ 7.5V
Supplier Device Package: 16-SSOP
Motor Type - Stepper: Bipolar
auf Bestellung 5750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 3.22 EUR |
| LB1945H-MPB-E |
|
Hersteller: onsemi
Description: IC MTRDRV BIPLR 4.75-5.25V 28SOP
Description: IC MTRDRV BIPLR 4.75-5.25V 28SOP
auf Bestellung 1142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 137+ | 4.65 EUR |
| STR-FAN65004B-GEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR FAN65004B
Packaging: Bulk
Voltage - Output: 4.57V ~ 5.25V
Voltage - Input: 4.5V ~ 65V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: FAN65004B
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR FAN65004B
Packaging: Bulk
Voltage - Output: 4.57V ~ 5.25V
Voltage - Input: 4.5V ~ 65V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: FAN65004B
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STR-FAN65005A-GEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR FAN65005A
Packaging: Bulk
Voltage - Output: 4.57V ~ 5.25V
Voltage - Input: 4.5V ~ 65V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: FAN65005A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR FAN65005A
Packaging: Bulk
Voltage - Output: 4.57V ~ 5.25V
Voltage - Input: 4.5V ~ 65V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: FAN65005A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STR-FAN65004C-GEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR FAN65004C
Packaging: Bulk
Voltage - Output: 4.57V ~ 5.25V
Voltage - Input: 4.5V ~ 65V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: FAN65004C
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR FAN65004C
Packaging: Bulk
Voltage - Output: 4.57V ~ 5.25V
Voltage - Input: 4.5V ~ 65V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: FAN65004C
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH