Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (98511) > Seite 1633 nach 1642
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| UM6K31NFHATCN | ROHM SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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UM6K31NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2705 Stücke: Lieferzeit 14-21 Tag (e) |
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| UM6K33NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| UM6K34NTCN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| EMH11T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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IMH11AT110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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UMH11NTN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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DAN217T146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Features of semiconductor devices: fast switching Capacitance: 3.5pF Case: SC59; SOT346 Max. forward voltage: 1.2V Max. forward impulse current: 4A Leakage current: 0.1µA Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
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| DAN217WMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series Max. off-state voltage: 80V Reverse recovery time: 4ns Max. forward impulse current: 4A Max. load current: 0.3A Max. forward voltage: 1.2V Type of diode: switching Load current: 0.1A |
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2SC4713KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 6V Collector current: 50mA Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 800MHz |
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2SC4713KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 6V Collector current: 50mA Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 800MHz |
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| RCX330N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 250V Drain current: 33A On-state resistance: 0.23Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A |
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| RD3S075CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 52W Case: TO252 Gate-source voltage: ±20V On-state resistance: 347mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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RB731XNTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: triple independent Max. forward voltage: 0.37V Case: SC88; SOT363 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 0.2A |
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BC847BT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23 Mounting: SMD Collector current: 0.1A Type of transistor: NPN Polarisation: bipolar Kind of package: reel; tape Power dissipation: 0.2W Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 45V Current gain: 200...450 |
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DTA123YCAT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Polarisation: bipolar Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 33 |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Polarisation: bipolar Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 33 |
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KDZVTFTR2.4B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA Mounting: SMD Case: SOD123F Semiconductor structure: single diode Zener voltage: 2.4V Leakage current: 0.2mA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener |
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SLR-332MG3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V Type of diode: LED Mounting: THT LED lens: transparent LED colour: yellow green Operating voltage: 2.1V LED current: 10mA Front: convex Terminal pitch: 2.54mm Wavelength: 563nm Viewing angle: 85° Number of terminals: 2 Luminosity: 5.6...16mcd LED diameter: 3.2mm |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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| SLR-342MG3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V LED colour: yellow green LED diameter: 3.1mm Type of diode: LED Wavelength: 572nm LED lens: diffused; yellow-green Luminosity: 5.6...16mcd LED current: 25mA Viewing angle: 40° Number of terminals: 2 Operating voltage: 2.1V Terminal pitch: 2.5mm Front: convex Mounting: THT |
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SLR-342VR3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2 Type of diode: LED Mounting: THT LED lens: diffused; red LED colour: red Operating voltage: 2V LED current: 10mA Front: convex Terminal pitch: 2.54mm Wavelength: 630nm Viewing angle: 40° Number of terminals: 2 Luminosity: 5.6...16mcd LED diameter: 3mm |
auf Bestellung 2320 Stücke: Lieferzeit 14-21 Tag (e) |
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RB500VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape Mounting: SMD Max. forward impulse current: 1A Max. forward voltage: 0.45V Max. off-state voltage: 40V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 1µA Case: SOD323F Type of diode: Schottky rectifying |
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| R6011KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP Mounting: THT Pulsed drain current: 33A Power dissipation: 53W Gate charge: 22nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220FP On-state resistance: 720mΩ |
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| RQ3E180AJTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 72A Power dissipation: 30W Case: HSMT8 Gate-source voltage: ±12V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DTD114EKT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 2809 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS50TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Mounting: THT Turn-on time: 53ns Turn-off time: 345ns Type of transistor: IGBT Power dissipation: 197W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 67nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A |
Produkt ist nicht verfügbar |
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| RGS50TSX2HRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Mounting: THT Turn-on time: 53ns Turn-off time: 345ns Type of transistor: IGBT Power dissipation: 197W Kind of package: tube Gate charge: 67nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A |
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| RGT50NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGT50NS65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGT50NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGTH50TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 100A Turn-on time: 65ns Turn-off time: 172ns Type of transistor: IGBT Power dissipation: 87W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 25A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC |
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RB530CM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 0.5A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 0.3µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.46V |
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RB530CM-60T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.2A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.6V |
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BCX19HZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 40...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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SSTA06HZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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SSTA56HZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
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DTB113ECHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
auf Bestellung 1785 Stücke: Lieferzeit 14-21 Tag (e) |
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DTB113ZCHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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DTB123YCHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 56 Collector current: 0.5A |
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DTD113ECHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
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DTD123YCHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
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DTA113ZCAHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 20A Kind of package: reel; tape Type of diode: rectifying Case: SMA Max. off-state voltage: 200V Max. forward voltage: 0.87V Load current: 1A Semiconductor structure: single diode |
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RF101L4STFTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SMA Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
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| RF101LAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 20A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 200V Max. forward voltage: 0.87V Load current: 1A Semiconductor structure: single diode |
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| RF101LAM4STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
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| RF101LAM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
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| HP8MA2TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 18/15A Pulsed drain current: 48A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 16.4/29mΩ Mounting: SMD Gate charge: 22/25nC Kind of package: reel; tape Kind of channel: enhanced |
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| RGS00TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 163W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 58nC Kind of package: tube Turn-on time: 70ns Turn-off time: 292ns Features of semiconductor devices: integrated anti-parallel diode |
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| RGS00TS65EHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 163W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 58nC Kind of package: tube Turn-on time: 70ns Turn-off time: 299ns Features of semiconductor devices: integrated anti-parallel diode |
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|
|
SSTA06T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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| RQ5L030SNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RQ5L035GNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| R6524KNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 72A Power dissipation: 245W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| R6576ENZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 76A; Idm: 228A; 735W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 76A Pulsed drain current: 228A Power dissipation: 735W Case: TO247 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| UDZVTE-174.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 4.7V Leakage current: 2µA Power dissipation: 0.2W Type of diode: Zener Mounting: SMD Case: SC90A; SOD323F Tolerance: ±2% |
Produkt ist nicht verfügbar |
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| UDZVFHTE-174.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 4.7V Leakage current: 2µA Power dissipation: 0.2W Type of diode: Zener Mounting: SMD Case: SC90A; SOD323F Tolerance: ±2% |
Produkt ist nicht verfügbar |
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| RS1E220ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -76A Pulsed drain current: -88A Power dissipation: 34W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1E280BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 30W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1E280GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 31W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| UM6K31NFHATCN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| UM6K31NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2705 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 495+ | 0.15 EUR |
| 620+ | 0.12 EUR |
| 705+ | 0.1 EUR |
| 750+ | 0.096 EUR |
| UM6K33NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| UM6K34NTCN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| EMH11T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| IMH11AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| UMH11NTN |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DAN217T146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Capacitance: 3.5pF
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Leakage current: 0.1µA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Capacitance: 3.5pF
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Leakage current: 0.1µA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 215+ | 0.33 EUR |
| DAN217WMTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Type of diode: switching
Load current: 0.1A
Produkt ist nicht verfügbar
| 2SC4713KT146R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 6V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 6V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Produkt ist nicht verfügbar
| 2SC4713KT146S |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 6V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 6V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Produkt ist nicht verfügbar
| RCX330N25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
Produkt ist nicht verfügbar
| RD3S075CNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 347mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 347mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RB731XNTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: triple independent
Max. forward voltage: 0.37V
Case: SC88; SOT363
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC88,SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: triple independent
Max. forward voltage: 0.37V
Case: SC88; SOT363
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Produkt ist nicht verfügbar
| BC847BT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 0.2W
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT23
Mounting: SMD
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 0.2W
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 45V
Current gain: 200...450
Produkt ist nicht verfügbar
| DTA123YCAT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 900+ | 0.08 EUR |
| DTA123YKAT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Polarisation: bipolar
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Produkt ist nicht verfügbar
| KDZVTFTR2.4B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Zener voltage: 2.4V
Leakage current: 0.2mA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Zener voltage: 2.4V
Leakage current: 0.2mA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Produkt ist nicht verfügbar
| SLR-332MG3F |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V
Type of diode: LED
Mounting: THT
LED lens: transparent
LED colour: yellow green
Operating voltage: 2.1V
LED current: 10mA
Front: convex
Terminal pitch: 2.54mm
Wavelength: 563nm
Viewing angle: 85°
Number of terminals: 2
Luminosity: 5.6...16mcd
LED diameter: 3.2mm
Category: THT LEDs Round
Description: LED; 3.2mm; yellow green; 5.6÷16mcd; 85°; Front: convex; 2.1V
Type of diode: LED
Mounting: THT
LED lens: transparent
LED colour: yellow green
Operating voltage: 2.1V
LED current: 10mA
Front: convex
Terminal pitch: 2.54mm
Wavelength: 563nm
Viewing angle: 85°
Number of terminals: 2
Luminosity: 5.6...16mcd
LED diameter: 3.2mm
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.19 EUR |
| 152+ | 0.47 EUR |
| 215+ | 0.33 EUR |
| 303+ | 0.24 EUR |
| 321+ | 0.22 EUR |
| SLR-342MG3F |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V
LED colour: yellow green
LED diameter: 3.1mm
Type of diode: LED
Wavelength: 572nm
LED lens: diffused; yellow-green
Luminosity: 5.6...16mcd
LED current: 25mA
Viewing angle: 40°
Number of terminals: 2
Operating voltage: 2.1V
Terminal pitch: 2.5mm
Front: convex
Mounting: THT
Category: THT LEDs Round
Description: LED; 3.1mm; yellow green; 5.6÷16mcd; 40°; Front: convex; 2.1V
LED colour: yellow green
LED diameter: 3.1mm
Type of diode: LED
Wavelength: 572nm
LED lens: diffused; yellow-green
Luminosity: 5.6...16mcd
LED current: 25mA
Viewing angle: 40°
Number of terminals: 2
Operating voltage: 2.1V
Terminal pitch: 2.5mm
Front: convex
Mounting: THT
Produkt ist nicht verfügbar
| SLR-342VR3F |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2
Type of diode: LED
Mounting: THT
LED lens: diffused; red
LED colour: red
Operating voltage: 2V
LED current: 10mA
Front: convex
Terminal pitch: 2.54mm
Wavelength: 630nm
Viewing angle: 40°
Number of terminals: 2
Luminosity: 5.6...16mcd
LED diameter: 3mm
Category: THT LEDs Round
Description: LED; 3mm; red; 5.6÷16mcd; 40°; Front: convex; 2V; No.of term: 2
Type of diode: LED
Mounting: THT
LED lens: diffused; red
LED colour: red
Operating voltage: 2V
LED current: 10mA
Front: convex
Terminal pitch: 2.54mm
Wavelength: 630nm
Viewing angle: 40°
Number of terminals: 2
Luminosity: 5.6...16mcd
LED diameter: 3mm
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 72+ | 1 EUR |
| 165+ | 0.43 EUR |
| 235+ | 0.3 EUR |
| 330+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| RB500VM-40TE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Mounting: SMD
Max. forward impulse current: 1A
Max. forward voltage: 0.45V
Max. off-state voltage: 40V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1µA
Case: SOD323F
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Mounting: SMD
Max. forward impulse current: 1A
Max. forward voltage: 0.45V
Max. off-state voltage: 40V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1µA
Case: SOD323F
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
| R6011KNXC7G |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Mounting: THT
Pulsed drain current: 33A
Power dissipation: 53W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 720mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 53W; TO220FP
Mounting: THT
Pulsed drain current: 33A
Power dissipation: 53W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 720mΩ
Produkt ist nicht verfügbar
| RQ3E180AJTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DTD114EKT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2809 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 330+ | 0.22 EUR |
| 525+ | 0.14 EUR |
| 585+ | 0.12 EUR |
| 750+ | 0.096 EUR |
| 795+ | 0.09 EUR |
| RGS50TSX2DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Mounting: THT
Turn-on time: 53ns
Turn-off time: 345ns
Type of transistor: IGBT
Power dissipation: 197W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Mounting: THT
Turn-on time: 53ns
Turn-off time: 345ns
Type of transistor: IGBT
Power dissipation: 197W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Produkt ist nicht verfügbar
| RGS50TSX2HRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Mounting: THT
Turn-on time: 53ns
Turn-off time: 345ns
Type of transistor: IGBT
Power dissipation: 197W
Kind of package: tube
Gate charge: 67nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Mounting: THT
Turn-on time: 53ns
Turn-off time: 345ns
Type of transistor: IGBT
Power dissipation: 197W
Kind of package: tube
Gate charge: 67nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Produkt ist nicht verfügbar
| RGT50NL65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGT50NS65DGC9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGT50NS65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGTH50TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Produkt ist nicht verfügbar
| RB530CM-30T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
Produkt ist nicht verfügbar
| RB530CM-60T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.1A; SOD923; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
Produkt ist nicht verfügbar
| BCX19HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 40...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 40...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
| SSTA06HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| SSTA56HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
| DTB113ECHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1250+ | 0.057 EUR |
| 1395+ | 0.051 EUR |
| 1670+ | 0.043 EUR |
| 1765+ | 0.041 EUR |
| DTB113ZCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DTB123YCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Produkt ist nicht verfügbar
| DTD113ECHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
| DTD123YCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DTA113ZCAHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| RF101L2SDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101L4STFTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM4STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM4STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| HP8MA2TB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 18/15A
Pulsed drain current: 48A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 16.4/29mΩ
Mounting: SMD
Gate charge: 22/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 18/15A
Pulsed drain current: 48A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 16.4/29mΩ
Mounting: SMD
Gate charge: 22/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RGS00TS65DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGS00TS65EHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| SSTA06T116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| RQ5L030SNTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RQ5L035GNTCL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6524KNZ4C13 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6576ENZ4C13 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 76A; Idm: 228A; 735W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 735W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 76A; Idm: 228A; 735W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 735W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| UDZVTE-174.7B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.7V
Leakage current: 2µA
Power dissipation: 0.2W
Type of diode: Zener
Mounting: SMD
Case: SC90A; SOD323F
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.7V
Leakage current: 2µA
Power dissipation: 0.2W
Type of diode: Zener
Mounting: SMD
Case: SC90A; SOD323F
Tolerance: ±2%
Produkt ist nicht verfügbar
| UDZVFHTE-174.7B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.7V
Leakage current: 2µA
Power dissipation: 0.2W
Type of diode: Zener
Mounting: SMD
Case: SC90A; SOD323F
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 4.7V
Leakage current: 2µA
Power dissipation: 0.2W
Type of diode: Zener
Mounting: SMD
Case: SC90A; SOD323F
Tolerance: ±2%
Produkt ist nicht verfügbar
| RS1E220ATTB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -76A
Pulsed drain current: -88A
Power dissipation: 34W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -76A
Pulsed drain current: -88A
Power dissipation: 34W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1E280BNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1E280GNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar