Suchergebnisse für "10nk" : > 60
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
Art der Ansicht :
Mindestbestellmenge: 20
Mindestbestellmenge: 5
Mindestbestellmenge: 3
Mindestbestellmenge: 18
Mindestbestellmenge: 9
Mindestbestellmenge: 1000
Mindestbestellmenge: 4
Mindestbestellmenge: 7
Mindestbestellmenge: 2
Mindestbestellmenge: 43
Mindestbestellmenge: 10
Mindestbestellmenge: 43
Mindestbestellmenge: 4
Mindestbestellmenge: 30
Mindestbestellmenge: 30
Mindestbestellmenge: 20
Mindestbestellmenge: 20
Mindestbestellmenge: 4
Mindestbestellmenge: 5
Mindestbestellmenge: 39
Mindestbestellmenge: 39
Mindestbestellmenge: 3
Mindestbestellmenge: 18
Mindestbestellmenge: 5
Mindestbestellmenge: 18
Mindestbestellmenge: 3
Mindestbestellmenge: 33
Mindestbestellmenge: 33
Mindestbestellmenge: 10
Mindestbestellmenge: 3
Mindestbestellmenge: 28
Mindestbestellmenge: 28
Mindestbestellmenge: 10
Mindestbestellmenge: 3
Mindestbestellmenge: 24
Mindestbestellmenge: 24
Mindestbestellmenge: 5
Mindestbestellmenge: 3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
10nH 10% 0603 (SWI0603CT10NK-Hitano) Induktivität Produktcode: 13555 |
Hitano |
 Drosseln > Induktivität 0603Nennwert: 10nH Genauigkeit: ±10% Größe: 0603 Eigenschaften: Draht auf Keramik; IDC max=700mA № 6: 480 mA Опір: 0,195 Ohm |
auf Bestellung 2693 Stück: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
|
|
STP10NK60Z Produktcode: 14727 |
ST |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 600 Idd,A: 10 Rds(on), Ohm: 0.75 Ciss, pF/Qg, nC: 1370/50 JHGF: THT |
auf Bestellung 116 Stück: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
|
|
STP10NK60ZFP Produktcode: 4775 |
ST |
 Transistoren > MOSFET N-CHGehäuse: TO-220FP Uds,V: 600 Idd,A: 10 Rds(on), Ohm: 0.75 Bem.: Ізольований корпус JHGF: THT ZCODE: 8541290010 |
verfügbar: 784 Stück
|
|
||||||||||||||||
|
|
STW10NK80Z Produktcode: 2065 |
ST |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 800 Idd,A: 9 Rds(on), Ohm: 01.09.2000 JHGF: THT ZCODE: 8541290010 |
verfügbar: 15 Stück
|
|
||||||||||||||||
| 10NK | HH2520 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
|
|
AIAC-0805C-10NK-T | Abracon LLC |
Description: FIXED IND 10NH 900MA 5.4MOHM SMD Tolerance: ±10% Packaging: Cut Tape (CT) Package / Case: Nonstandard Size / Dimension: 0.112" L x 0.071" W (2.85mm x 1.80mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 5.4mOhm Max Q @ Freq: 70 @ 300MHz Frequency - Self Resonant: 3GHz Material - Core: Air Inductance Frequency - Test: 300 MHz Height - Seated (Max): 0.083" (2.10mm) Part Status: Active Inductance: 10 nH Current Rating (Amps): 900 mA |
auf Bestellung 1801 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
AIAC-0805C-10NK-T | ABRACON |
RF Inductors - SMD FIXED IND 10NH 900MA 5.4 MOHM |
auf Bestellung 2694 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| DKIH-3237-1010-NK | SCHURTER |
DKIH-3237-1010-NK Toroidal inductors |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
|
|
DKIH-3237-1010-NK | Schurter |
Common Mode Chokes / Filters 10A 2X6.9mH SINGLE PHASE CHOKE |
auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DKIH-3237-1010-NK | SCHURTER Inc. |
Description: CMC 10A 2LN TH Packaging: Bulk Package / Case: Horizontal, 4 PC Pin Size / Dimension: 1.457" Dia (37.00mm) Mounting Type: Through Hole Number of Lines: 2 Operating Temperature: -40°C ~ 100°C Approval Agency: ENEC, UR Height (Max): 1.024" (26.00mm) Current Rating (Max): 10A DC Resistance (DCR) (Max): 10mOhm Part Status: Active |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
L-05B10NKV6T | Johanson Technology |
RF Inductors - SMD 10nH 10% |
auf Bestellung 11248 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
L-14W10NKV4E | Johanson Technology |
RF Inductors - SMD 10nH 10% |
auf Bestellung 2816 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| S51-PR-2-C10-NK | IDEC |
Photoelectric Sensors 952701231 Sensor M18 tubular |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
|
|
STB10NK60ZT4 | STMicroelectronics |
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH |
auf Bestellung 597 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STB10NK60ZT4 | STMicroelectronics |
Description: MOSFET N-CH 600V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STB10NK60ZT4 | STMicroelectronics |
Description: MOSFET N-CH 600V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
auf Bestellung 2684 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STFU10NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
auf Bestellung 393 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STFU10NK60Z | STMicroelectronics |
MOSFET N-channel 600 V, 0.68 Ohm typ 10 A SuperMESH Power MOSFET in TO-220FP ultra narr |
auf Bestellung 2062 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK60Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 115W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 356 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| STP10NK60Z | ST |
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 115W; -55°C ~ 150°C; STP10NK60Z TSTP10NK60Z Anzahl je Verpackung: 10 Stücke |
auf Bestellung 125 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
|
|
STP10NK60Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 115W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 356 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
auf Bestellung 871 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK60Z | STMicroelectronics |
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH |
auf Bestellung 4167 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK60ZFP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 1709 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
STP10NK60ZFP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1709 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
| STP10NK60ZFP | ST |
N-MOSFET 10A 600V 35W 0.75Ω STP10NK60ZFP TSTP10NK60ZFP Anzahl je Verpackung: 10 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
| STP10NK60ZFP | ST |
N-MOSFET 10A 600V 35W 0.75Ω STP10NK60ZFP TSTP10NK60ZFP Anzahl je Verpackung: 10 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
|
|
STP10NK60ZFP | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
auf Bestellung 802 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK60ZFP | STMicroelectronics |
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH |
auf Bestellung 429 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK70Z | STMicroelectronics |
Description: MOSFET N-CH 700V 8.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK70ZFP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.4A Pulsed drain current: 34A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
STP10NK70ZFP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.4A Pulsed drain current: 34A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK70ZFP | STMicroelectronics |
Description: MOSFET N-CH 700V 8.6A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK70ZFP | STMicroelectronics |
MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A |
auf Bestellung 996 Stücke: Lieferzeit 101-105 Tag (e) |
|
||||||||||||||||
|
|
STP10NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| STP10NK80Z | ST |
N-MOSFET 9A 800V 160W STP10NK80Z TSTP10NK80Z Anzahl je Verpackung: 5 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
|
|
STP10NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK80Z | STMicroelectronics |
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH |
auf Bestellung 2918 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 9A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V |
auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK80ZFP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
STP10NK80ZFP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
| STP10NK80ZFP | ST |
Transistor N-Channel MOSFET; 800V; 800V; 30V; 900mOhm; 9A; 40W; -55°C ~ 150°C; STP10NK80ZFP TSTP10NK80ZFP Anzahl je Verpackung: 5 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
|
|
STP10NK80ZFP | STMicroelectronics |
Description: MOSFET N-CH 800V 9A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V |
auf Bestellung 977 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STP10NK80ZFP | STMicroelectronics |
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH |
auf Bestellung 807 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STW10NK60Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 156W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
STW10NK60Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 156W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
| STW10NK60Z | ST |
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 156W; -55°C ~ 150°C; STW10NK60Z TSTW10NK60Z Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
|
|
STW10NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
auf Bestellung 421 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STW10NK60Z | STMicroelectronics |
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STW10NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
STW10NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
| STW10NK80Z | ST |
Transistor N-Channel MOSFET; 800V; 800V; 30V; 900mOhm; 9A; 160W; -55°C ~ 150°C; STW10NK80Z TSTW10NK80Z Anzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
|
|
STW10NK80Z | STMicroelectronics |
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH |
auf Bestellung 404 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STW10NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 9A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V |
auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| 040210NK | TOKO |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
| 2520-10NK |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||||
| 543LL2012F10NK | TOKO |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
| 80110NK |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||||
| CI201209-10NK |
auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||||
| CIH21T10NKNE |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
| 10nH 10% 0603 (SWI0603CT10NK-Hitano) Induktivität Produktcode: 13555 |
|
Hersteller: Hitano
Drosseln > Induktivität 0603
Nennwert: 10nH
Genauigkeit: ±10%
Größe: 0603
Eigenschaften: Draht auf Keramik; IDC max=700mA
№ 6: 480 mA
Опір: 0,195 Ohm
Drosseln > Induktivität 0603
Nennwert: 10nH
Genauigkeit: ±10%
Größe: 0603
Eigenschaften: Draht auf Keramik; IDC max=700mA
№ 6: 480 mA
Опір: 0,195 Ohm
auf Bestellung 2693 Stück:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 0.17 EUR |
| 10+ | 0.12 EUR |
| 100+ | 0.084 EUR |
| 1000+ | 0.075 EUR |
| STP10NK60Z Produktcode: 14727 |
|
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 600
Idd,A: 10
Rds(on), Ohm: 0.75
Ciss, pF/Qg, nC: 1370/50
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 600
Idd,A: 10
Rds(on), Ohm: 0.75
Ciss, pF/Qg, nC: 1370/50
JHGF: THT
auf Bestellung 116 Stück:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1.4 EUR |
| STP10NK60ZFP Produktcode: 4775 |
|
|
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Uds,V: 600
Idd,A: 10
Rds(on), Ohm: 0.75
Bem.: Ізольований корпус
JHGF: THT
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Uds,V: 600
Idd,A: 10
Rds(on), Ohm: 0.75
Bem.: Ізольований корпус
JHGF: THT
ZCODE: 8541290010
verfügbar: 784 Stück
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 0.76 EUR |
| 10+ | 0.72 EUR |
| STW10NK80Z Produktcode: 2065 |
|
|
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 800
Idd,A: 9
Rds(on), Ohm: 01.09.2000
JHGF: THT
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 800
Idd,A: 9
Rds(on), Ohm: 01.09.2000
JHGF: THT
ZCODE: 8541290010
verfügbar: 15 Stück
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7 EUR |
| 10+ | 6.11 EUR |
| AIAC-0805C-10NK-T |
|
Hersteller: Abracon LLC
Description: FIXED IND 10NH 900MA 5.4MOHM SMD
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: Nonstandard
Size / Dimension: 0.112" L x 0.071" W (2.85mm x 1.80mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 5.4mOhm Max
Q @ Freq: 70 @ 300MHz
Frequency - Self Resonant: 3GHz
Material - Core: Air
Inductance Frequency - Test: 300 MHz
Height - Seated (Max): 0.083" (2.10mm)
Part Status: Active
Inductance: 10 nH
Current Rating (Amps): 900 mA
Description: FIXED IND 10NH 900MA 5.4MOHM SMD
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: Nonstandard
Size / Dimension: 0.112" L x 0.071" W (2.85mm x 1.80mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 5.4mOhm Max
Q @ Freq: 70 @ 300MHz
Frequency - Self Resonant: 3GHz
Material - Core: Air
Inductance Frequency - Test: 300 MHz
Height - Seated (Max): 0.083" (2.10mm)
Part Status: Active
Inductance: 10 nH
Current Rating (Amps): 900 mA
auf Bestellung 1801 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 0.88 EUR |
| 24+ | 0.75 EUR |
| 26+ | 0.69 EUR |
| 50+ | 0.62 EUR |
| 100+ | 0.56 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| AIAC-0805C-10NK-T |
|
Hersteller: ABRACON
RF Inductors - SMD FIXED IND 10NH 900MA 5.4 MOHM
RF Inductors - SMD FIXED IND 10NH 900MA 5.4 MOHM
auf Bestellung 2694 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.43 EUR |
| 1000+ | 0.38 EUR |
| 4000+ | 0.37 EUR |
| 8000+ | 0.34 EUR |
| 24000+ | 0.33 EUR |
| DKIH-3237-1010-NK |
|
Hersteller: SCHURTER
DKIH-3237-1010-NK Toroidal inductors
DKIH-3237-1010-NK Toroidal inductors
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 29.24 EUR |
| 4+ | 20 EUR |
| DKIH-3237-1010-NK |
|
Hersteller: Schurter
Common Mode Chokes / Filters 10A 2X6.9mH SINGLE PHASE CHOKE
Common Mode Chokes / Filters 10A 2X6.9mH SINGLE PHASE CHOKE
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 31.79 EUR |
| 40+ | 28.28 EUR |
| 120+ | 25.63 EUR |
| DKIH-3237-1010-NK |
|
Hersteller: SCHURTER Inc.
Description: CMC 10A 2LN TH
Packaging: Bulk
Package / Case: Horizontal, 4 PC Pin
Size / Dimension: 1.457" Dia (37.00mm)
Mounting Type: Through Hole
Number of Lines: 2
Operating Temperature: -40°C ~ 100°C
Approval Agency: ENEC, UR
Height (Max): 1.024" (26.00mm)
Current Rating (Max): 10A
DC Resistance (DCR) (Max): 10mOhm
Part Status: Active
Description: CMC 10A 2LN TH
Packaging: Bulk
Package / Case: Horizontal, 4 PC Pin
Size / Dimension: 1.457" Dia (37.00mm)
Mounting Type: Through Hole
Number of Lines: 2
Operating Temperature: -40°C ~ 100°C
Approval Agency: ENEC, UR
Height (Max): 1.024" (26.00mm)
Current Rating (Max): 10A
DC Resistance (DCR) (Max): 10mOhm
Part Status: Active
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.98 EUR |
| L-05B10NKV6T |
|
Hersteller: Johanson Technology
RF Inductors - SMD 10nH 10%
RF Inductors - SMD 10nH 10%
auf Bestellung 11248 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 0.16 EUR |
| 44+ | 0.065 EUR |
| 100+ | 0.048 EUR |
| 1000+ | 0.033 EUR |
| 2500+ | 0.032 EUR |
| 15000+ | 0.025 EUR |
| 90000+ | 0.023 EUR |
| L-14W10NKV4E |
|
Hersteller: Johanson Technology
RF Inductors - SMD 10nH 10%
RF Inductors - SMD 10nH 10%
auf Bestellung 2816 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 0.33 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.2 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
| S51-PR-2-C10-NK |
|
Hersteller: IDEC
Photoelectric Sensors 952701231 Sensor M18 tubular
Photoelectric Sensors 952701231 Sensor M18 tubular
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 100.41 EUR |
| 10+ | 84.55 EUR |
| 25+ | 79.27 EUR |
| 50+ | 77.53 EUR |
| 100+ | 75.87 EUR |
| 250+ | 73.27 EUR |
| 500+ | 69.59 EUR |
| STB10NK60ZT4 |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.83 EUR |
| 10+ | 4.88 EUR |
| 100+ | 3.94 EUR |
| 500+ | 3.52 EUR |
| 1000+ | 2.99 EUR |
| 2000+ | 2.83 EUR |
| STB10NK60ZT4 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 3.03 EUR |
| STB10NK60ZT4 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 2684 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.86 EUR |
| 10+ | 4.92 EUR |
| 100+ | 3.98 EUR |
| 500+ | 3.54 EUR |
| STFU10NK60Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.64 EUR |
| 50+ | 2.12 EUR |
| 100+ | 1.68 EUR |
| STFU10NK60Z |
|
Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 0.68 Ohm typ 10 A SuperMESH Power MOSFET in TO-220FP ultra narr
MOSFET N-channel 600 V, 0.68 Ohm typ 10 A SuperMESH Power MOSFET in TO-220FP ultra narr
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.17 EUR |
| 2000+ | 1.03 EUR |
| 5000+ | 1.02 EUR |
| STP10NK60Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.69 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.33 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| 250+ | 0.97 EUR |
| STP10NK60Z |
|
Hersteller: ST
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 115W; -55°C ~ 150°C; STP10NK60Z TSTP10NK60Z
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 115W; -55°C ~ 150°C; STP10NK60Z TSTP10NK60Z
Anzahl je Verpackung: 10 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 3.04 EUR |
| STP10NK60Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 115W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 356 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.69 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.33 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| 250+ | 0.97 EUR |
| STP10NK60Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.44 EUR |
| 50+ | 4.31 EUR |
| 100+ | 3.69 EUR |
| 500+ | 3.28 EUR |
| STP10NK60Z |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
auf Bestellung 4167 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.4 EUR |
| 10+ | 4.56 EUR |
| 25+ | 3.41 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.64 EUR |
| STP10NK60ZFP | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 1709 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.43 EUR |
| 37+ | 1.94 EUR |
| 41+ | 1.74 EUR |
| 71+ | 1.02 EUR |
| 75+ | 0.96 EUR |
| STP10NK60ZFP | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1709 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.43 EUR |
| 37+ | 1.94 EUR |
| 41+ | 1.74 EUR |
| 71+ | 1.02 EUR |
| 75+ | 0.96 EUR |
| STP10NK60ZFP | |
|
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.69 EUR |
| STP10NK60ZFP | |
|
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.69 EUR |
| STP10NK60ZFP | |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 802 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.67 EUR |
| 50+ | 4.49 EUR |
| 100+ | 3.85 EUR |
| 500+ | 3.42 EUR |
| STP10NK60ZFP | |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.98 EUR |
| 10+ | 4.77 EUR |
| 25+ | 3.91 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.64 EUR |
| 500+ | 3.31 EUR |
| 1000+ | 2.8 EUR |
| STP10NK70Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 700V 8.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 700V 8.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.71 EUR |
| 50+ | 2.98 EUR |
| 100+ | 2.91 EUR |
| STP10NK70ZFP |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Pulsed drain current: 34A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Pulsed drain current: 34A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.86 EUR |
| 44+ | 1.66 EUR |
| 49+ | 1.49 EUR |
| 55+ | 1.32 EUR |
| 58+ | 1.24 EUR |
| STP10NK70ZFP |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Pulsed drain current: 34A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5.4A; Idm: 34A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Pulsed drain current: 34A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.86 EUR |
| 44+ | 1.66 EUR |
| 49+ | 1.49 EUR |
| 55+ | 1.32 EUR |
| 58+ | 1.24 EUR |
| 250+ | 1.23 EUR |
| STP10NK70ZFP |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 700V 8.6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 700V 8.6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.85 EUR |
| STP10NK70ZFP |
|
Hersteller: STMicroelectronics
MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A
MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A
auf Bestellung 996 Stücke:
Lieferzeit 101-105 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.79 EUR |
| 10+ | 6.2 EUR |
| 25+ | 5.39 EUR |
| 100+ | 4.61 EUR |
| 250+ | 4.49 EUR |
| 500+ | 4.1 EUR |
| 1000+ | 3.5 EUR |
| STP10NK80Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 4.13 EUR |
| 32+ | 2.25 EUR |
| 34+ | 2.12 EUR |
| STP10NK80Z |
|
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 6.1 EUR |
| STP10NK80Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 4.13 EUR |
| 32+ | 2.25 EUR |
| 34+ | 2.12 EUR |
| STP10NK80Z |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
auf Bestellung 2918 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.61 EUR |
| 10+ | 4.59 EUR |
| 25+ | 3.5 EUR |
| 100+ | 3.36 EUR |
| STP10NK80Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Description: MOSFET N-CH 800V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.97 EUR |
| 50+ | 5.52 EUR |
| 100+ | 4.73 EUR |
| 500+ | 4.21 EUR |
| STP10NK80ZFP | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.17 EUR |
| 37+ | 1.96 EUR |
| 43+ | 1.7 EUR |
| 47+ | 1.54 EUR |
| 49+ | 1.47 EUR |
| STP10NK80ZFP | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.17 EUR |
| 37+ | 1.96 EUR |
| 43+ | 1.7 EUR |
| 47+ | 1.54 EUR |
| 49+ | 1.47 EUR |
| 250+ | 1.44 EUR |
| STP10NK80ZFP | |
|
Hersteller: ST
Transistor N-Channel MOSFET; 800V; 800V; 30V; 900mOhm; 9A; 40W; -55°C ~ 150°C; STP10NK80ZFP TSTP10NK80ZFP
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 800V; 800V; 30V; 900mOhm; 9A; 40W; -55°C ~ 150°C; STP10NK80ZFP TSTP10NK80ZFP
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 4.47 EUR |
| STP10NK80ZFP | |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
auf Bestellung 977 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.08 EUR |
| 50+ | 5.61 EUR |
| 100+ | 4.81 EUR |
| 500+ | 4.27 EUR |
| STP10NK80ZFP | |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.69 EUR |
| 10+ | 6.42 EUR |
| 25+ | 5.35 EUR |
| 100+ | 4.61 EUR |
| 500+ | 4.24 EUR |
| 1000+ | 3.5 EUR |
| 2000+ | 3.41 EUR |
| STW10NK60Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 156W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 156W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 2.56 EUR |
| STW10NK60Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 156W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 156W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 2.56 EUR |
| 30+ | 2.39 EUR |
| 120+ | 1.59 EUR |
| STW10NK60Z |
|
Hersteller: ST
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 156W; -55°C ~ 150°C; STW10NK60Z TSTW10NK60Z
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 156W; -55°C ~ 150°C; STW10NK60Z TSTW10NK60Z
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 4.57 EUR |
| STW10NK60Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.71 EUR |
| 30+ | 5.31 EUR |
| 120+ | 4.55 EUR |
| STW10NK60Z |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.67 EUR |
| 25+ | 5.28 EUR |
| 100+ | 4.54 EUR |
| 250+ | 4.03 EUR |
| 600+ | 3.27 EUR |
| 1200+ | 3.22 EUR |
| STW10NK80Z | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.03 EUR |
| 27+ | 2.72 EUR |
| 35+ | 2.07 EUR |
| 37+ | 1.97 EUR |
| STW10NK80Z | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.03 EUR |
| 27+ | 2.72 EUR |
| 35+ | 2.07 EUR |
| 37+ | 1.97 EUR |
| STW10NK80Z | |
|
Hersteller: ST
Transistor N-Channel MOSFET; 800V; 800V; 30V; 900mOhm; 9A; 160W; -55°C ~ 150°C; STW10NK80Z TSTW10NK80Z
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 800V; 800V; 30V; 900mOhm; 9A; 160W; -55°C ~ 150°C; STW10NK80Z TSTW10NK80Z
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 6 EUR |
| STW10NK80Z | |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.2 EUR |
| 10+ | 7.11 EUR |
| 25+ | 5.16 EUR |
| 100+ | 4.8 EUR |
| 250+ | 4.63 EUR |
| 600+ | 3.98 EUR |
| STW10NK80Z | |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Description: MOSFET N-CH 800V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.25 EUR |
| 30+ | 6.55 EUR |
| 120+ | 5.61 EUR |
| 510+ | 4.99 EUR |
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]