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HCPL-061N-500E HCPL-061N-500E Broadcom Limited AV02-0391EN Description: OPTOISO 3.75KV OPN COLLECTOR 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.3V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO Tall
Rise / Fall Time (Typ): 42ns, 12ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 9638 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.48 EUR
10+ 4.58 EUR
100+ 3.75 EUR
500+ 3.16 EUR
Mindestbestellmenge: 3
IRFB11N50A Vishay 91094.pdf description N-MOSFET 500V 11A 170W 0.520Ω IRFB11N50A TIRFB11n50a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.2 EUR
Mindestbestellmenge: 10
IRFB11N50APBF IRFB11N50APBF VISHAY IRFB11N50APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 916 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
47+ 1.53 EUR
53+ 1.36 EUR
54+ 1.33 EUR
58+ 1.24 EUR
59+ 1.23 EUR
250+ 1.22 EUR
Mindestbestellmenge: 42
IRFB11N50APBF IRFB11N50APBF VISHAY IRFB11N50APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 916 Stücke:
Lieferzeit 7-14 Tag (e)
42+1.72 EUR
47+ 1.53 EUR
53+ 1.36 EUR
54+ 1.33 EUR
58+ 1.24 EUR
59+ 1.23 EUR
250+ 1.22 EUR
Mindestbestellmenge: 42
IRFB11N50APBF IRFB11N50APBF Vishay Siliconix 91094.pdf Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 708 Stücke:
Lieferzeit 10-14 Tag (e)
5+4 EUR
50+ 3.2 EUR
100+ 2.63 EUR
500+ 2.23 EUR
Mindestbestellmenge: 5
IRFB11N50APBF-BE3 IRFB11N50APBF-BE3 Vishay Siliconix 91094.pdf Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 2190 Stücke:
Lieferzeit 10-14 Tag (e)
5+4 EUR
50+ 3.2 EUR
100+ 2.63 EUR
500+ 2.23 EUR
1000+ 1.89 EUR
2000+ 1.8 EUR
Mindestbestellmenge: 5
IRFB11N50APBF-BE3 Vishay 91094.pdf Транз. Пол. БМ TO220AB N-Channel Udss=500V; Id=11A; Rds=0,52Ohm Pd=170W
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
1+10.12 EUR
10+ 8.18 EUR
IRFP31N50LPBF IRFP31N50LPBF VISHAY IRFP31N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 460W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.91 EUR
16+ 4.49 EUR
Mindestbestellmenge: 11
IRFP31N50LPBF IRFP31N50LPBF VISHAY IRFP31N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 460W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 730 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.91 EUR
16+ 4.49 EUR
Mindestbestellmenge: 11
IRFP31N50LPBF IRFP31N50LPBF Vishay Siliconix TO247AC_Side.jpg Description: MOSFET N-CH 500V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.54 EUR
25+ 6.81 EUR
100+ 6.31 EUR
Mindestbestellmenge: 3
IRFS11N50A Siliconix 91286.pdf N-MOSFET 500V 11A 170W IRFS11N50A TIRFS11N50A
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.24 EUR
Mindestbestellmenge: 10
IRFS11N50A Vishay 91286.pdf N-MOSFET 500V 11A 170W IRFS11N50A TIRFS11N50A
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.24 EUR
Mindestbestellmenge: 10
IRFS11N50APBF IRFS11N50APBF VISHAY IRFS11N50A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
29+ 2.49 EUR
36+ 1.99 EUR
38+ 1.89 EUR
Mindestbestellmenge: 26
IRFS11N50APBF IRFS11N50APBF VISHAY IRFS11N50A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.77 EUR
29+ 2.49 EUR
36+ 1.99 EUR
38+ 1.89 EUR
250+ 1.84 EUR
Mindestbestellmenge: 26
IRFS11N50APBF IRFS11N50APBF Vishay Siliconix 91286.pdf Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 553 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.66 EUR
75+ 3.69 EUR
150+ 3.17 EUR
525+ 2.81 EUR
Mindestbestellmenge: 4
IRFS11N50ATRLP IRFS11N50ATRLP Vishay Siliconix 91286.pdf Description: MOSFET N-CH 500V 11A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.66 EUR
10+ 3.91 EUR
100+ 3.17 EUR
Mindestbestellmenge: 4
IRFSL11N50APBF IRFSL11N50APBF VISHAY IRFSL11N50APBF-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
32+ 2.29 EUR
41+ 1.74 EUR
44+ 1.64 EUR
Mindestbestellmenge: 29
IRFSL11N50APBF IRFSL11N50APBF VISHAY IRFSL11N50APBF-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 642 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.53 EUR
32+ 2.29 EUR
41+ 1.74 EUR
44+ 1.64 EUR
Mindestbestellmenge: 29
L6981N50DR L6981N50DR STMicroelectronics en.DM00747618.pdf Description: IC REG BUCK 5V 1.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz
Voltage - Input (Max): 38V
Topology: Buck
Supplier Device Package: 8-SO
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.38 EUR
Mindestbestellmenge: 2500
L6981N50DR L6981N50DR STMicroelectronics en.DM00747618.pdf Description: IC REG BUCK 5V 1.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz
Voltage - Input (Max): 38V
Topology: Buck
Supplier Device Package: 8-SO
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 4991 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
10+ 4.25 EUR
25+ 4.02 EUR
100+ 3.48 EUR
250+ 3.31 EUR
500+ 2.97 EUR
1000+ 2.5 EUR
Mindestbestellmenge: 4
LMDP-031-N50-WD6Q18.0-1-RH LMDP-031-N50-WD6Q18.0-1-RH Omnetics PdfFile_107577.pdf Description: CABLE ASSY D-MIC-D 31P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Ribbon
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 31
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+520.84 EUR
MTP1N50E MTP1N50E onsemi ONSM-S-A0002809675-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
1567+0.31 EUR
Mindestbestellmenge: 1567
NB21N50104JBB NB21N50104JBB KYOCERA AVX nb21-nb12-nb20.pdf Description: THERM NTC 100KOHM 4160K 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 70 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
35+ 0.51 EUR
40+ 0.45 EUR
50+ 0.42 EUR
100+ 0.36 EUR
500+ 0.3 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 29
NB21N50104JBB NB21N50104JBB KYOCERA AVX nb21-nb12-nb20.pdf Description: THERM NTC 100KOHM 4160K 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 70 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.23 EUR
Mindestbestellmenge: 4000
NTHS0603N01N5002FE NTHS0603N01N5002FE Vishay Dale nths.pdf Description: NTHS-0603N01 50K 1% E3
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3974K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±1%
B25/75: 3964K
Part Status: Active
Power - Max: 125 mW
auf Bestellung 29397 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
10+ 1.97 EUR
25+ 1.64 EUR
50+ 1.61 EUR
100+ 1.46 EUR
500+ 1.29 EUR
Mindestbestellmenge: 7
NTHS0603N01N5002FE NTHS0603N01N5002FE Vishay Dale nths.pdf Description: NTHS-0603N01 50K 1% E3
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3974K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±1%
B25/75: 3964K
Part Status: Active
Power - Max: 125 mW
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.29 EUR
Mindestbestellmenge: 2000
NTHS0805N01N5002JE NTHS0805N01N5002JE Vishay Dale nths.pdf Description: THERMISTOR NTC 50KOHM 3890K 0805
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±5%
B25/75: 3890K
Part Status: Active
auf Bestellung 11094 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.92 EUR
10+ 11.14 EUR
25+ 10.3 EUR
100+ 8.91 EUR
500+ 8.35 EUR
1000+ 7.79 EUR
Mindestbestellmenge: 2
NTHS0805N01N5002JE NTHS0805N01N5002JE Vishay Dale nths.pdf Description: THERMISTOR NTC 50KOHM 3890K 0805
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±5%
B25/75: 3890K
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.21 EUR
4000+ 3.1 EUR
Mindestbestellmenge: 2000
NTHS1206N01N5002JE NTHS1206N01N5002JE Vishay Dale nths.pdf Description: THERMISTOR NTC 50KOHM 3964K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±5%
B25/75: 3964K
Part Status: Active
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.01 EUR
10+ 6.01 EUR
25+ 5.34 EUR
50+ 5.08 EUR
100+ 4.94 EUR
500+ 4.14 EUR
1000+ 3.87 EUR
Mindestbestellmenge: 3
R1111N501B-TR-FE R1111N501B-TR-FE Nisshinbo Micro Devices Inc. r1111-ea.pdf Description: IC REG LINEAR 5V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.26V @ 100mA
Protection Features: Over Current
auf Bestellung 3141 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
17+ 1.04 EUR
25+ 0.98 EUR
100+ 0.8 EUR
250+ 0.74 EUR
500+ 0.63 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
R1121N501B-TR-FE R1121N501B-TR-FE Nisshinbo Micro Devices Inc. r1121-ea.pdf Description: IC REG LINEAR 5V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.26V @ 100mA
Protection Features: Over Current
auf Bestellung 2991 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
17+ 1.04 EUR
25+ 0.98 EUR
100+ 0.8 EUR
250+ 0.74 EUR
500+ 0.63 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
RP171N501B-TR-FE RP171N501B-TR-FE Nisshinbo Micro Devices Inc. rp171-ea.pdf Description: IC REG LINEAR 5V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.4V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2615 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
24+ 0.75 EUR
26+ 0.7 EUR
100+ 0.56 EUR
250+ 0.52 EUR
500+ 0.44 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
SL-B8T1N50L4WW Samsung Semiconductor, Inc. Data_Sheet_HiLOM_SM28_Rev.1.0.pdf Description: LED MOD NEUT WHT SQUARE 4000K
Packaging: Bulk
Color: White, Neutral
Size / Dimension: 81.00mm L x 81.00mm W
Type: LED Module
Configuration: Square
Voltage - Forward (Vf) (Typ): 19.7V
Height: 5.30mm
Current - Test: 700mA
Viewing Angle: 120°
Lens Type: Flat
Current - Max: 770mA
Lumens/Watt @ Current - Test: 176 lm/W
CCT (K): 4000K 7-Step MacAdam Ellipse
CRI (Color Rendering Index): 80
Temperature - Test: 70°C
Luminous Flux @ Current/Temperature: 2430lm (Typ)
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.4 EUR
10+ 11.89 EUR
100+ 9.83 EUR
Mindestbestellmenge: 2
SPA21N50C3XKSA1 SPA21N50C3XKSA1 Infineon Technologies Infineon-SPP_I_A21N50C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42cf25f47d8 Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)
117+4.25 EUR
Mindestbestellmenge: 117
SPB21N50C3ATMA1 SPB21N50C3ATMA1 Infineon Technologies SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Description: MOSFET N-CH 560V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2898 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.37 EUR
10+ 6.18 EUR
100+ 5 EUR
500+ 4.44 EUR
Mindestbestellmenge: 3
SPB21N50C3ATMA1 SPB21N50C3ATMA1 Infineon Technologies SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Description: MOSFET N-CH 560V 21A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.81 EUR
Mindestbestellmenge: 1000
SPI21N50C3XKSA1 SPI21N50C3XKSA1 Infineon Technologies SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Description: MOSFET N-CH 560V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.09 EUR
10+ 5.96 EUR
100+ 4.82 EUR
Mindestbestellmenge: 3
SPP21N50C3 SPP21N50C3 INFINEON TECHNOLOGIES SPx21N50C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
15+ 4.9 EUR
16+ 4.65 EUR
50+ 4.63 EUR
Mindestbestellmenge: 11
SPP21N50C3 SPP21N50C3 INFINEON TECHNOLOGIES SPx21N50C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
15+ 4.9 EUR
16+ 4.65 EUR
50+ 4.63 EUR
Mindestbestellmenge: 11
SPP21N50C3XKSA1 SPP21N50C3XKSA1 Infineon Technologies SPx21N50C3.pdf Description: MOSFET N-CH 500V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2468 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.09 EUR
50+ 5.62 EUR
100+ 4.82 EUR
500+ 4.28 EUR
1000+ 3.67 EUR
2000+ 3.45 EUR
Mindestbestellmenge: 3
SSP1N50B SSP1N50B Fairchild Semiconductor FAIRS17119-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 750mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
919+0.54 EUR
Mindestbestellmenge: 919
SSU1N50BTU SSU1N50BTU Fairchild Semiconductor FAIRS48113-1.pdf?t.download=true&u=5oefqw Description: 1.3A, 520V, 5.3OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 650mA, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 55440 Stücke:
Lieferzeit 10-14 Tag (e)
792+0.63 EUR
Mindestbestellmenge: 792
STD11N50M2 STD11N50M2 STMicroelectronics en.DM00107139.pdf Description: MOSFET N-CH 500V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.85 EUR
Mindestbestellmenge: 2500
STD11N50M2 STD11N50M2 STMicroelectronics en.DM00107139.pdf Description: MOSFET N-CH 500V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 100 V
auf Bestellung 4185 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
11+ 1.69 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 9
STD11N50M2 STMicroelectronics en.DM00107139.pdf N-канальний ПТ; Udss, В = 500; Ciss, пФ @ Uds, В = 395pF @ 100V; Qg, нКл = 12; Rds = 0,53 Ом; Ugs(th) = 25; Р, Вт = 85; Тексп, °C = -55...150; DPAK
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
2+4.15 EUR
10+ 3.57 EUR
100+ 3.14 EUR
Mindestbestellmenge: 2
8121N5000103KX SYFER DIP
auf Bestellung 86200 Stücke:
Lieferzeit 21-28 Tag (e)
A261N-500E AVAGO 09+
auf Bestellung 561 Stücke:
Lieferzeit 21-28 Tag (e)
AO220IRFB11N50A 01+
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
AO220IRFB11N50A 01+
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
DS1231N-50 NS 08+ DIP8
auf Bestellung 558 Stücke:
Lieferzeit 21-28 Tag (e)
DS1231N-50 NS 09+ DIP8
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
DS1231N-50 DALLAS 09+ DIP8
auf Bestellung 694 Stücke:
Lieferzeit 21-28 Tag (e)
FB11N50A
auf Bestellung 990 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50 FAIRCHILD 07+ SOT-252
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50 FAIRCHILD SOT-252
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50 FAIRCHILD TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50 fairchild to-252/d-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50B FAIRCHILD SOT-252
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
FQU1N50BTU
auf Bestellung 9950 Stücke:
Lieferzeit 21-28 Tag (e)
HCPL-061N#500 Agilent AV02-0391EN
auf Bestellung 6500 Stücke:
Lieferzeit 21-28 Tag (e)
HCPL-061N-500E AV02-0391EN
HCPL-061N-500E
Hersteller: Broadcom Limited
Description: OPTOISO 3.75KV OPN COLLECTOR 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.3V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO Tall
Rise / Fall Time (Typ): 42ns, 12ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 9638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.48 EUR
10+ 4.58 EUR
100+ 3.75 EUR
500+ 3.16 EUR
Mindestbestellmenge: 3
IRFB11N50A description 91094.pdf
Hersteller: Vishay
N-MOSFET 500V 11A 170W 0.520Ω IRFB11N50A TIRFB11n50a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+3.2 EUR
Mindestbestellmenge: 10
IRFB11N50APBF IRFB11N50APBF.pdf
IRFB11N50APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 916 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
42+1.72 EUR
47+ 1.53 EUR
53+ 1.36 EUR
54+ 1.33 EUR
58+ 1.24 EUR
59+ 1.23 EUR
250+ 1.22 EUR
Mindestbestellmenge: 42
IRFB11N50APBF IRFB11N50APBF.pdf
IRFB11N50APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 916 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
42+1.72 EUR
47+ 1.53 EUR
53+ 1.36 EUR
54+ 1.33 EUR
58+ 1.24 EUR
59+ 1.23 EUR
250+ 1.22 EUR
Mindestbestellmenge: 42
IRFB11N50APBF 91094.pdf
IRFB11N50APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4 EUR
50+ 3.2 EUR
100+ 2.63 EUR
500+ 2.23 EUR
Mindestbestellmenge: 5
IRFB11N50APBF-BE3 91094.pdf
IRFB11N50APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 2190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4 EUR
50+ 3.2 EUR
100+ 2.63 EUR
500+ 2.23 EUR
1000+ 1.89 EUR
2000+ 1.8 EUR
Mindestbestellmenge: 5
IRFB11N50APBF-BE3 91094.pdf
Hersteller: Vishay
Транз. Пол. БМ TO220AB N-Channel Udss=500V; Id=11A; Rds=0,52Ohm Pd=170W
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+10.12 EUR
10+ 8.18 EUR
IRFP31N50LPBF IRFP31N50L.pdf
IRFP31N50LPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 460W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.91 EUR
16+ 4.49 EUR
Mindestbestellmenge: 11
IRFP31N50LPBF IRFP31N50L.pdf
IRFP31N50LPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 460W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 730 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.91 EUR
16+ 4.49 EUR
Mindestbestellmenge: 11
IRFP31N50LPBF TO247AC_Side.jpg
IRFP31N50LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.54 EUR
25+ 6.81 EUR
100+ 6.31 EUR
Mindestbestellmenge: 3
IRFS11N50A 91286.pdf
Hersteller: Siliconix
N-MOSFET 500V 11A 170W IRFS11N50A TIRFS11N50A
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+5.24 EUR
Mindestbestellmenge: 10
IRFS11N50A 91286.pdf
Hersteller: Vishay
N-MOSFET 500V 11A 170W IRFS11N50A TIRFS11N50A
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+5.24 EUR
Mindestbestellmenge: 10
IRFS11N50APBF IRFS11N50A.pdf
IRFS11N50APBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
26+2.77 EUR
29+ 2.49 EUR
36+ 1.99 EUR
38+ 1.89 EUR
Mindestbestellmenge: 26
IRFS11N50APBF IRFS11N50A.pdf
IRFS11N50APBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.77 EUR
29+ 2.49 EUR
36+ 1.99 EUR
38+ 1.89 EUR
250+ 1.84 EUR
Mindestbestellmenge: 26
IRFS11N50APBF 91286.pdf
IRFS11N50APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 553 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.66 EUR
75+ 3.69 EUR
150+ 3.17 EUR
525+ 2.81 EUR
Mindestbestellmenge: 4
IRFS11N50ATRLP 91286.pdf
IRFS11N50ATRLP
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.66 EUR
10+ 3.91 EUR
100+ 3.17 EUR
Mindestbestellmenge: 4
IRFSL11N50APBF IRFSL11N50APBF-dte.pdf
IRFSL11N50APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
29+2.53 EUR
32+ 2.29 EUR
41+ 1.74 EUR
44+ 1.64 EUR
Mindestbestellmenge: 29
IRFSL11N50APBF IRFSL11N50APBF-dte.pdf
IRFSL11N50APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Power dissipation: 190W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 642 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
29+2.53 EUR
32+ 2.29 EUR
41+ 1.74 EUR
44+ 1.64 EUR
Mindestbestellmenge: 29
L6981N50DR en.DM00747618.pdf
L6981N50DR
Hersteller: STMicroelectronics
Description: IC REG BUCK 5V 1.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz
Voltage - Input (Max): 38V
Topology: Buck
Supplier Device Package: 8-SO
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.38 EUR
Mindestbestellmenge: 2500
L6981N50DR en.DM00747618.pdf
L6981N50DR
Hersteller: STMicroelectronics
Description: IC REG BUCK 5V 1.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz
Voltage - Input (Max): 38V
Topology: Buck
Supplier Device Package: 8-SO
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
auf Bestellung 4991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.73 EUR
10+ 4.25 EUR
25+ 4.02 EUR
100+ 3.48 EUR
250+ 3.31 EUR
500+ 2.97 EUR
1000+ 2.5 EUR
Mindestbestellmenge: 4
LMDP-031-N50-WD6Q18.0-1-RH PdfFile_107577.pdf
LMDP-031-N50-WD6Q18.0-1-RH
Hersteller: Omnetics
Description: CABLE ASSY D-MIC-D 31P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Ribbon
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 31
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+520.84 EUR
MTP1N50E ONSM-S-A0002809675-1.pdf?t.download=true&u=5oefqw
MTP1N50E
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1567+0.31 EUR
Mindestbestellmenge: 1567
NB21N50104JBB nb21-nb12-nb20.pdf
NB21N50104JBB
Hersteller: KYOCERA AVX
Description: THERM NTC 100KOHM 4160K 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 70 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
35+ 0.51 EUR
40+ 0.45 EUR
50+ 0.42 EUR
100+ 0.36 EUR
500+ 0.3 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 29
NB21N50104JBB nb21-nb12-nb20.pdf
NB21N50104JBB
Hersteller: KYOCERA AVX
Description: THERM NTC 100KOHM 4160K 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
B25/85: 4160K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 100k
Resistance Tolerance: ±5%
Part Status: Active
Power - Max: 70 mW
Grade: Automotive
Qualification: AEC-Q200
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.23 EUR
Mindestbestellmenge: 4000
NTHS0603N01N5002FE nths.pdf
NTHS0603N01N5002FE
Hersteller: Vishay Dale
Description: NTHS-0603N01 50K 1% E3
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3974K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±1%
B25/75: 3964K
Part Status: Active
Power - Max: 125 mW
auf Bestellung 29397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.55 EUR
10+ 1.97 EUR
25+ 1.64 EUR
50+ 1.61 EUR
100+ 1.46 EUR
500+ 1.29 EUR
Mindestbestellmenge: 7
NTHS0603N01N5002FE nths.pdf
NTHS0603N01N5002FE
Hersteller: Vishay Dale
Description: NTHS-0603N01 50K 1% E3
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3974K
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±1%
B25/75: 3964K
Part Status: Active
Power - Max: 125 mW
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.29 EUR
Mindestbestellmenge: 2000
NTHS0805N01N5002JE nths.pdf
NTHS0805N01N5002JE
Hersteller: Vishay Dale
Description: THERMISTOR NTC 50KOHM 3890K 0805
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±5%
B25/75: 3890K
Part Status: Active
auf Bestellung 11094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.92 EUR
10+ 11.14 EUR
25+ 10.3 EUR
100+ 8.91 EUR
500+ 8.35 EUR
1000+ 7.79 EUR
Mindestbestellmenge: 2
NTHS0805N01N5002JE nths.pdf
NTHS0805N01N5002JE
Hersteller: Vishay Dale
Description: THERMISTOR NTC 50KOHM 3890K 0805
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±5%
B25/75: 3890K
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+3.21 EUR
4000+ 3.1 EUR
Mindestbestellmenge: 2000
NTHS1206N01N5002JE nths.pdf
NTHS1206N01N5002JE
Hersteller: Vishay Dale
Description: THERMISTOR NTC 50KOHM 3964K 1206
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
B Value Tolerance: ±3%
Resistance in Ohms @ 25°C: 50k
Resistance Tolerance: ±5%
B25/75: 3964K
Part Status: Active
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.01 EUR
10+ 6.01 EUR
25+ 5.34 EUR
50+ 5.08 EUR
100+ 4.94 EUR
500+ 4.14 EUR
1000+ 3.87 EUR
Mindestbestellmenge: 3
R1111N501B-TR-FE r1111-ea.pdf
R1111N501B-TR-FE
Hersteller: Nisshinbo Micro Devices Inc.
Description: IC REG LINEAR 5V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.26V @ 100mA
Protection Features: Over Current
auf Bestellung 3141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.18 EUR
17+ 1.04 EUR
25+ 0.98 EUR
100+ 0.8 EUR
250+ 0.74 EUR
500+ 0.63 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
R1121N501B-TR-FE r1121-ea.pdf
R1121N501B-TR-FE
Hersteller: Nisshinbo Micro Devices Inc.
Description: IC REG LINEAR 5V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.26V @ 100mA
Protection Features: Over Current
auf Bestellung 2991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.18 EUR
17+ 1.04 EUR
25+ 0.98 EUR
100+ 0.8 EUR
250+ 0.74 EUR
500+ 0.63 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
RP171N501B-TR-FE rp171-ea.pdf
RP171N501B-TR-FE
Hersteller: Nisshinbo Micro Devices Inc.
Description: IC REG LINEAR 5V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.4V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.75 EUR
26+ 0.7 EUR
100+ 0.56 EUR
250+ 0.52 EUR
500+ 0.44 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
SL-B8T1N50L4WW Data_Sheet_HiLOM_SM28_Rev.1.0.pdf
Hersteller: Samsung Semiconductor, Inc.
Description: LED MOD NEUT WHT SQUARE 4000K
Packaging: Bulk
Color: White, Neutral
Size / Dimension: 81.00mm L x 81.00mm W
Type: LED Module
Configuration: Square
Voltage - Forward (Vf) (Typ): 19.7V
Height: 5.30mm
Current - Test: 700mA
Viewing Angle: 120°
Lens Type: Flat
Current - Max: 770mA
Lumens/Watt @ Current - Test: 176 lm/W
CCT (K): 4000K 7-Step MacAdam Ellipse
CRI (Color Rendering Index): 80
Temperature - Test: 70°C
Luminous Flux @ Current/Temperature: 2430lm (Typ)
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.4 EUR
10+ 11.89 EUR
100+ 9.83 EUR
Mindestbestellmenge: 2
SPA21N50C3XKSA1 Infineon-SPP_I_A21N50C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42cf25f47d8
SPA21N50C3XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
117+4.25 EUR
Mindestbestellmenge: 117
SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
SPB21N50C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.37 EUR
10+ 6.18 EUR
100+ 5 EUR
500+ 4.44 EUR
Mindestbestellmenge: 3
SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
SPB21N50C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+3.81 EUR
Mindestbestellmenge: 1000
SPI21N50C3XKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
SPI21N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.09 EUR
10+ 5.96 EUR
100+ 4.82 EUR
Mindestbestellmenge: 3
SPP21N50C3 SPx21N50C3.pdf
SPP21N50C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+7.14 EUR
12+ 6.42 EUR
15+ 4.9 EUR
16+ 4.65 EUR
50+ 4.63 EUR
Mindestbestellmenge: 11
SPP21N50C3 SPx21N50C3.pdf
SPP21N50C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+7.14 EUR
12+ 6.42 EUR
15+ 4.9 EUR
16+ 4.65 EUR
50+ 4.63 EUR
Mindestbestellmenge: 11
SPP21N50C3XKSA1 SPx21N50C3.pdf
SPP21N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.09 EUR
50+ 5.62 EUR
100+ 4.82 EUR
500+ 4.28 EUR
1000+ 3.67 EUR
2000+ 3.45 EUR
Mindestbestellmenge: 3
SSP1N50B FAIRS17119-1.pdf?t.download=true&u=5oefqw
SSP1N50B
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 750mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
919+0.54 EUR
Mindestbestellmenge: 919
SSU1N50BTU FAIRS48113-1.pdf?t.download=true&u=5oefqw
SSU1N50BTU
Hersteller: Fairchild Semiconductor
Description: 1.3A, 520V, 5.3OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 650mA, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 55440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
792+0.63 EUR
Mindestbestellmenge: 792
STD11N50M2 en.DM00107139.pdf
STD11N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.85 EUR
Mindestbestellmenge: 2500
STD11N50M2 en.DM00107139.pdf
STD11N50M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 100 V
auf Bestellung 4185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
11+ 1.69 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 9
STD11N50M2 en.DM00107139.pdf
Hersteller: STMicroelectronics
N-канальний ПТ; Udss, В = 500; Ciss, пФ @ Uds, В = 395pF @ 100V; Qg, нКл = 12; Rds = 0,53 Ом; Ugs(th) = 25; Р, Вт = 85; Тексп, °C = -55...150; DPAK
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+4.15 EUR
10+ 3.57 EUR
100+ 3.14 EUR
Mindestbestellmenge: 2
8121N5000103KX
Hersteller: SYFER
DIP
auf Bestellung 86200 Stücke:
Lieferzeit 21-28 Tag (e)
A261N-500E
Hersteller: AVAGO
09+
auf Bestellung 561 Stücke:
Lieferzeit 21-28 Tag (e)
AO220IRFB11N50A
01+
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
AO220IRFB11N50A
01+
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
DS1231N-50
Hersteller: NS
08+ DIP8
auf Bestellung 558 Stücke:
Lieferzeit 21-28 Tag (e)
DS1231N-50
Hersteller: NS
09+ DIP8
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
DS1231N-50
Hersteller: DALLAS
09+ DIP8
auf Bestellung 694 Stücke:
Lieferzeit 21-28 Tag (e)
FB11N50A
auf Bestellung 990 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50
Hersteller: FAIRCHILD
07+ SOT-252
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50
Hersteller: FAIRCHILD
SOT-252
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50
Hersteller: FAIRCHILD
TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50
Hersteller: fairchild
to-252/d-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
FQD1N50B
Hersteller: FAIRCHILD
SOT-252
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
FQU1N50BTU
auf Bestellung 9950 Stücke:
Lieferzeit 21-28 Tag (e)
HCPL-061N#500 AV02-0391EN
Hersteller: Agilent
auf Bestellung 6500 Stücke:
Lieferzeit 21-28 Tag (e)
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