Suchergebnisse für "40n03" : > 60

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AM140N03-03D AM140N03-03D Analog Power Inc. datasheet.php?part=AM140N03-03D Description: MOSFET N-CH 30V 100A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1929 pF @ 15 V
auf Bestellung 350 Stücke:
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10+7.21 EUR
100+2.82 EUR
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BSO040N03MS G BSO040N03MS G Infineon Technologies BSO040N03MS_rev1.1.pdf MOSFETs N-Ch 30V 20A DSO-8 OptiMOS 3M
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100+1.74 EUR
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BSO040N03MSGXUMA1 BSO040N03MSGXUMA1 Infineon Technologies infineon-bso040n03ms-g-datasheet-en.pdf Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
auf Bestellung 337 Stücke:
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50+1.96 EUR
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DI040N03PT DI040N03PT Diotec Semiconductor di040n03pt.pdf MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N
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DI040N03PT DI040N03PT Diotec Semiconductor di040n03pt.pdf Description: MOSFET N-CH 30V 40A 8-POWERVDFN
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30+0.71 EUR
50+0.52 EUR
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DI040N03PT-AQ DI040N03PT-AQ DIOTEC SEMICONDUCTOR di040n03pt.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 120A
Gate charge: 12nC
Application: automotive industry
Kind of package: reel; tape
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
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DI040N03PT-AQ DI040N03PT-AQ Diotec Semiconductor di040n03pt.pdf Description: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
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DI040N03PT-AQ DI040N03PT-AQ Diotec Semiconductor di040n03pt.pdf Description: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 7787 Stücke:
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50+0.6 EUR
100+0.52 EUR
500+0.39 EUR
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DI040N03PT-AQ DI040N03PT-AQ Diotec Semiconductor di040n03pt.pdf MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101
auf Bestellung 2909 Stücke:
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IPB240N03S4LR9ATMA1 IPB240N03S4LR9ATMA1 Infineon Technologies Infineon-IPB240N03S4L-R9-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a36984b60479 Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21485 Stücke:
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93+6.52 EUR
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IPD040N03L G IPD040N03L G Infineon Technologies Infineon_IPD040N03LG_DS_v01_02_en.pdf MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1 Infineon Technologies infineon_ipd040n03lf2s_datasheet_en.pdf MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1 Infineon Technologies IPD040N03LF2SATMA1.pdf Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 1826 Stücke:
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7+3.47 EUR
10+2.21 EUR
50+1.65 EUR
100+1.48 EUR
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IPD040N03LGATMA1 IPD040N03LGATMA1 INFINEON TECHNOLOGIES IPD040N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2272 Stücke:
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IPD040N03LGATMA1 IPD040N03LGATMA1 Infineon Technologies infineon-ipd040n03l-g-datasheet-en.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 1324 Stücke:
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6+3.69 EUR
10+2.34 EUR
50+1.76 EUR
100+1.57 EUR
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IPD40N03S4L08ATMA1 IPD40N03S4L08ATMA1 Infineon Technologies Infineon-IPD40N03S4L_08-DS-v01_01-en.pdf?fileId=db3a30431ddc9372011e2b3ad6c04d78 Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 9247 Stücke:
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328+1.83 EUR
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ISZ040N03L5ISATMA1 ISZ040N03L5ISATMA1 Infineon Technologies infineon_isz040n03l5is_datasheet_en.pdf MOSFETs TRENCH <= 40V
auf Bestellung 7218 Stücke:
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2+1.89 EUR
10+0.77 EUR
100+0.51 EUR
500+0.42 EUR
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ISZ040N03L5ISATMA1 ISZ040N03L5ISATMA1 Infineon Technologies Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 70 Stücke:
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11+1.99 EUR
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NTD40N03R-1G NTD40N03R-1G onsemi ntd40n03r-d.pdf Description: MOSFET N-CH 25V 7.8A/32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
auf Bestellung 350178 Stücke:
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NTD40N03RT4 NTD40N03RT4 onsemi ntd40n03r-d.pdf Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
auf Bestellung 4451 Stücke:
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OSX040N03-C OSX040N03-C ATGBICS mmo_87099552_1651680612_1852_22205.pdf Description: Compatible SFP+ 10G
Packaging: Retail Package
Connector Type: LC Duplex
Wavelength: 850nm
Mounting Type: Pluggable, SFP+
Voltage - Supply: 3.3V
Applications: Networking, General Purpose
Data Rate: 10Gbps
Part Status: Active
auf Bestellung 3194 Stücke:
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1+114.62 EUR
150+65.75 EUR
500+62 EUR
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RTR040N03HZGTL RTR040N03HZGTL Rohm Semiconductor datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.51 EUR
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RTR040N03HZGTL RTR040N03HZGTL ROHM Semiconductor datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Transistor, Nch 30V 4A Small Signal MOSFET
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2+2.01 EUR
10+0.94 EUR
100+0.83 EUR
500+0.64 EUR
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3000+0.5 EUR
6000+0.48 EUR
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RTR040N03HZGTL RTR040N03HZGTL Rohm Semiconductor datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5453 Stücke:
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11+2.07 EUR
17+1.31 EUR
50+0.96 EUR
100+0.86 EUR
500+0.65 EUR
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RTR040N03TL RTR040N03TL VBsemi TRTR040N03TL_VBS_VBSEMI_0001.pdf description 30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs RTR040N03TL-VB; RTR040N03TL-JSM; CJ3400S3; RTR040N03TL TRTR040N03TL VBS
Anzahl je Verpackung: 50 Stücke
auf Bestellung 130 Stücke:
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100+0.61 EUR
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TSM040N03CP ROG TSM040N03CP ROG Taiwan Semiconductor Corporation TSM040N03CP_B1807.pdf Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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TSM040N03CP ROG TSM040N03CP ROG Taiwan Semiconductor Corporation TSM040N03CP_B1807.pdf Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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TSM240N03CX Taiwan Semiconductor Co., Ltd. Transistor N-Channel MOSFET; 30V; 20V; 34mOhm; 6,5A; 1,56W; -55°C ~ 150°C; TSM240N03CX RFG TSM240N03CX RFG TTSM240n03cx
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TSM240N03CX RFG TSM240N03CX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 4.1nC
Kind of package: tape
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TSM240N03CX RFG TSM240N03CX RFG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
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TSM240N03CX RFG TSM240N03CX RFG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
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TSM240N03CX RFG TSM240N03CX RFG Taiwan Semiconductor MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
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TSM240N03CX6 RFG TSM240N03CX6 RFG Taiwan Semiconductor MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
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TSM240N03CX6 RFG TSM240N03CX6 RFG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 6.5A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
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WMB040N03LG2 WMB040N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 121A
Gate charge: 15nC
Kind of package: reel; tape
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WMQ040N03LG2 WMQ040N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 170A
Gate charge: 15.9nC
Kind of package: reel; tape
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WMQ40N03T1 WMQ40N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 20nC
Kind of package: reel; tape
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AP40N03
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AP40N03GH
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ME40N03
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NTD40N03R-1 ON TO-252/D-PAK
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NTD40N03RG ON ntd40n03r-d.pdf TO-252/D-PAK
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NTD40N03RT4G ON ntd40n03r-d.pdf TO252
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RTR040N03 ROHM
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AM140N03-03D datasheet.php?part=AM140N03-03D
AM140N03-03D
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 100A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1929 pF @ 15 V
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BSO040N03MS G BSO040N03MS_rev1.1.pdf
BSO040N03MS G
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 20A DSO-8 OptiMOS 3M
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BSO040N03MSGXUMA1 infineon-bso040n03ms-g-datasheet-en.pdf
BSO040N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
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DI040N03PT di040n03pt.pdf
DI040N03PT
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N
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DI040N03PT di040n03pt.pdf
DI040N03PT
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 30V 40A 8-POWERVDFN
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DI040N03PT-AQ di040n03pt.pdf
DI040N03PT-AQ
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 120A
Gate charge: 12nC
Application: automotive industry
Kind of package: reel; tape
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DI040N03PT-AQ di040n03pt.pdf
DI040N03PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
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DI040N03PT-AQ di040n03pt.pdf
DI040N03PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
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DI040N03PT-AQ di040n03pt.pdf
DI040N03PT-AQ
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101
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IPB240N03S4LR9ATMA1 Infineon-IPB240N03S4L-R9-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a36984b60479
IPB240N03S4LR9ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
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IPD040N03L G Infineon_IPD040N03LG_DS_v01_02_en.pdf
IPD040N03L G
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3
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IPD040N03LF2SATMA1 infineon_ipd040n03lf2s_datasheet_en.pdf
IPD040N03LF2SATMA1
Hersteller: Infineon Technologies
MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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2000+0.98 EUR
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
IPD040N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 1826 Stücke:
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IPD040N03LGATMA1 IPD040N03LG-DTE.pdf
IPD040N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD040N03LGATMA1 infineon-ipd040n03l-g-datasheet-en.pdf
IPD040N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
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IPD40N03S4L08ATMA1 Infineon-IPD40N03S4L_08-DS-v01_01-en.pdf?fileId=db3a30431ddc9372011e2b3ad6c04d78
IPD40N03S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
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ISZ040N03L5ISATMA1 infineon_isz040n03l5is_datasheet_en.pdf
ISZ040N03L5ISATMA1
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
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ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
ISZ040N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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NTD40N03R-1G ntd40n03r-d.pdf
NTD40N03R-1G
Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
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NTD40N03RT4 ntd40n03r-d.pdf
NTD40N03RT4
Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
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OSX040N03-C mmo_87099552_1651680612_1852_22205.pdf
OSX040N03-C
Hersteller: ATGBICS
Description: Compatible SFP+ 10G
Packaging: Retail Package
Connector Type: LC Duplex
Wavelength: 850nm
Mounting Type: Pluggable, SFP+
Voltage - Supply: 3.3V
Applications: Networking, General Purpose
Data Rate: 10Gbps
Part Status: Active
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RTR040N03HZGTL datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
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3000+0.51 EUR
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RTR040N03HZGTL datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03HZGTL
Hersteller: ROHM Semiconductor
MOSFETs Transistor, Nch 30V 4A Small Signal MOSFET
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RTR040N03HZGTL datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
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RTR040N03TL description TRTR040N03TL_VBS_VBSEMI_0001.pdf
RTR040N03TL
Hersteller: VBsemi
30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs RTR040N03TL-VB; RTR040N03TL-JSM; CJ3400S3; RTR040N03TL TRTR040N03TL VBS
Anzahl je Verpackung: 50 Stücke
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100+0.61 EUR
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TSM040N03CP ROG TSM040N03CP_B1807.pdf
TSM040N03CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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2500+0.81 EUR
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TSM040N03CP ROG TSM040N03CP_B1807.pdf
TSM040N03CP ROG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 3459 Stücke:
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TSM240N03CX
Hersteller: Taiwan Semiconductor Co., Ltd.
Transistor N-Channel MOSFET; 30V; 20V; 34mOhm; 6,5A; 1,56W; -55°C ~ 150°C; TSM240N03CX RFG TSM240N03CX RFG TTSM240n03cx
Anzahl je Verpackung: 50 Stücke
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TSM240N03CX RFG
TSM240N03CX RFG
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 4.1nC
Kind of package: tape
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TSM240N03CX RFG
TSM240N03CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
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TSM240N03CX RFG
TSM240N03CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 36339 Stücke:
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TSM240N03CX RFG
TSM240N03CX RFG
Hersteller: Taiwan Semiconductor
MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
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TSM240N03CX6 RFG
TSM240N03CX6 RFG
Hersteller: Taiwan Semiconductor
MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
auf Bestellung 19076 Stücke:
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3+1.33 EUR
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TSM240N03CX6 RFG
TSM240N03CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 2789 Stücke:
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16+1.38 EUR
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WMB040N03LG2
WMB040N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 121A
Gate charge: 15nC
Kind of package: reel; tape
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WMQ040N03LG2
WMQ040N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 170A
Gate charge: 15.9nC
Kind of package: reel; tape
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WMQ40N03T1
WMQ40N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 20nC
Kind of package: reel; tape
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AP40N03
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AP40N03GH
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AP40N03H
Hersteller: ANPEC
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AP40N03J
Hersteller: ANPEC
auf Bestellung 30000 Stücke:
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AP40N03S
Hersteller: AP
03+
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BSO040N03MSG
Hersteller: INF
08+
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FQB140N03L
Hersteller: FAIRCHILD
07+ SOT-263
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FQB140N03LTM
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ME40N03
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MTD40N03RT4G
Hersteller: ON
09+
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NTD40N03
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NTD40N03G
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NTD40N03R
Hersteller: ON
07+ SOT-252
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NTD40N03R-1
Hersteller: ON
TO-252/D-PAK
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NTD40N03RG ntd40n03r-d.pdf
Hersteller: ON
TO-252/D-PAK
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Hersteller: ON
TO252
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RHP40N03
auf Bestellung 5945 Stücke:
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RSH140N03
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RSH140N03TB
auf Bestellung 798200 Stücke:
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RSS140N03
Hersteller: ROHM
07+ SOP8
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RTR040N03
Hersteller: ROHM
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RTR040N03 / QV
Hersteller: ROHM
09+ SOT-23
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