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Foto | Bezeichnung | Hersteller | Beschreibung |
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BSO040N03MS G | Infineon Technologies |
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auf Bestellung 12690 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO040N03MSGXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO040N03MSGXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V |
auf Bestellung 7251 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO040N03MSGXUMA1 | Infineon Technologies |
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auf Bestellung 18509 Stücke: Lieferzeit 10-14 Tag (e) |
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DI040N03PT | Diotec Semiconductor |
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auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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DI040N03PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101 |
auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB240N03S4LR8ATMA1 | Infineon Technologies |
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auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB240N03S4LR9ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 180µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 18485 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD040N03L G | Infineon Technologies |
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auf Bestellung 2784 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD040N03LF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V Supplier Device Package: PG-TO252-3-34 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD040N03LF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V Supplier Device Package: PG-TO252-3-34 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD040N03LF2SATMA1 | Infineon Technologies |
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auf Bestellung 3996 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD040N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: PG-TO252-3 Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 79A On-state resistance: 4mΩ Power dissipation: 94W |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD040N03LGATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
auf Bestellung 166 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD40N03S4L08ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 11432 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ040N03L5ISATMA1 | Infineon Technologies |
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auf Bestellung 7748 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ040N03L5ISATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 2.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ040N03L5ISATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 2.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V |
auf Bestellung 19685 Stücke: Lieferzeit 10-14 Tag (e) |
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MCAC40N03A-TP | Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Power Dissipation (Max): 35W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V |
auf Bestellung 3811 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD40N03R-001 | onsemi |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V |
auf Bestellung 2265 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD40N03R-1G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V |
auf Bestellung 350103 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD40N03RT4 | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V |
auf Bestellung 6670 Stücke: Lieferzeit 10-14 Tag (e) |
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OSX040N03-C | ATGBICS |
![]() Packaging: Retail Package Connector Type: LC Duplex Wavelength: 850nm Mounting Type: Pluggable, SFP+ Voltage - Supply: 3.3V Applications: Networking, General Purpose Data Rate: 10Gbps Part Status: Active |
auf Bestellung 3747 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR040N03HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR040N03HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9147 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR040N03HZGTL | ROHM Semiconductor |
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auf Bestellung 4685 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR040N03TL | VBsemi |
![]() ![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 130 Stücke: Lieferzeit 7-14 Tag (e) |
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RTR040N03TL | ROHM Semiconductor |
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auf Bestellung 2137 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM240N03CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 4.1A On-state resistance: 24mΩ Power dissipation: 1.56W Gate charge: 4.1nC |
auf Bestellung 433 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM240N03CX RFG | Taiwan Semiconductor Co., Ltd. |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM240N03CX RFG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 49798 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM240N03CX RFG | Taiwan Semiconductor |
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auf Bestellung 19658 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM240N03CX RFG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM240N03CX RFG-ML | MOSLEADER |
Description: N-Channel 30V 6.5A SOT-23 Packaging: Tape & Reel (TR) |
auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM240N03CX6 RFG | Taiwan Semiconductor |
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auf Bestellung 11343 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM240N03CX6 RFG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM240N03CX6 RFG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 11512 Stücke: Lieferzeit 10-14 Tag (e) |
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WMB040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PDFN5060-8 Mounting: SMD Kind of package: tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PDFN3030-8 Mounting: SMD Kind of package: tape Kind of channel: enhancement |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ40N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PDFN3030-8 Mounting: SMD Kind of package: tape Kind of channel: enhancement |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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AP40N03 |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
AP40N03GH |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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AP40N03H | ANPEC | 07+ |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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AP40N03H | ANPEC |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
AP40N03J | ANPEC |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
AP40N03J | ANPEC | 07+ |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
AP40N03S | AP | 03+ |
auf Bestellung 624 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
BSO040N03MS G |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BSO040N03MSG | INF | 08+ |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
BSO040N03MSGXUMA1 | Infineon |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FQB140N03L | FAIRCHILD | SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FQB140N03L | fairchild | to-263/d2-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FQB140N03L | FAIRCHILD | 07+ SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FQB140N03LTM |
auf Bestellung 545 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
ME40N03 |
auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MTD40N03RT4G | ON | 09+ |
auf Bestellung 2518 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTD40N03 |
auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTD40N03G |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTD40N03R | ON | 07+ SOT-252 |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTD40N03R | ON | SOT-252 |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
BSO040N03MS G |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 20A DSO-8 OptiMOS 3M
MOSFETs N-Ch 30V 20A DSO-8 OptiMOS 3M
auf Bestellung 12690 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.41 EUR |
10+ | 1.99 EUR |
100+ | 1.54 EUR |
500+ | 1.31 EUR |
1000+ | 1.06 EUR |
2500+ | 1.00 EUR |
5000+ | 0.95 EUR |
BSO040N03MSGXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.95 EUR |
5000+ | 0.91 EUR |
BSO040N03MSGXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
auf Bestellung 7251 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.36 EUR |
10+ | 2.14 EUR |
100+ | 1.45 EUR |
500+ | 1.15 EUR |
1000+ | 1.05 EUR |
BSO040N03MSGXUMA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 20A DSO-8 OptiMOS 3M
MOSFETs N-Ch 30V 20A DSO-8 OptiMOS 3M
auf Bestellung 18509 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.41 EUR |
10+ | 1.83 EUR |
100+ | 1.28 EUR |
500+ | 1.04 EUR |
1000+ | 0.96 EUR |
2500+ | 0.94 EUR |
DI040N03PT |
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Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N
MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 0.62 EUR |
10+ | 0.49 EUR |
100+ | 0.30 EUR |
500+ | 0.29 EUR |
2500+ | 0.25 EUR |
5000+ | 0.20 EUR |
DI040N03PT-AQ |
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101
MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 0.85 EUR |
10+ | 0.61 EUR |
100+ | 0.38 EUR |
500+ | 0.31 EUR |
1000+ | 0.25 EUR |
5000+ | 0.22 EUR |
10000+ | 0.19 EUR |
IPB240N03S4LR8ATMA1 |
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Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.00 EUR |
100+ | 9.01 EUR |
500+ | 8.66 EUR |
1000+ | 4.10 EUR |
IPB240N03S4LR9ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18485 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
106+ | 4.79 EUR |
IPD040N03L G |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3
MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3
auf Bestellung 2784 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.15 EUR |
10+ | 1.44 EUR |
100+ | 1.01 EUR |
500+ | 0.91 EUR |
1000+ | 0.82 EUR |
2500+ | 0.70 EUR |
IPD040N03LF2SATMA1 |
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Hersteller: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.63 EUR |
IPD040N03LF2SATMA1 |
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Hersteller: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.31 EUR |
13+ | 1.46 EUR |
100+ | 0.97 EUR |
500+ | 0.76 EUR |
1000+ | 0.69 EUR |
IPD040N03LF2SATMA1 |
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Hersteller: Infineon Technologies
MOSFETs Addresses a broad range of applications from low- to high-switching frequency
MOSFETs Addresses a broad range of applications from low- to high-switching frequency
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.44 EUR |
10+ | 1.18 EUR |
100+ | 0.92 EUR |
500+ | 0.78 EUR |
1000+ | 0.64 EUR |
2000+ | 0.60 EUR |
4000+ | 0.57 EUR |
IPD040N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 4mΩ
Power dissipation: 94W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 4mΩ
Power dissipation: 94W
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
106+ | 0.68 EUR |
120+ | 0.60 EUR |
138+ | 0.52 EUR |
146+ | 0.49 EUR |
500+ | 0.48 EUR |
IPD040N03LGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.25 EUR |
13+ | 1.42 EUR |
100+ | 0.94 EUR |
IPD40N03S4L08ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 11432 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
482+ | 1.04 EUR |
ISZ040N03L5ISATMA1 |
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Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
auf Bestellung 7748 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 0.87 EUR |
10+ | 0.62 EUR |
100+ | 0.45 EUR |
500+ | 0.42 EUR |
1000+ | 0.40 EUR |
10000+ | 0.33 EUR |
ISZ040N03L5ISATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.32 EUR |
ISZ040N03L5ISATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 19685 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.55 EUR |
19+ | 0.97 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.44 EUR |
2000+ | 0.40 EUR |
MCAC40N03A-TP |
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Hersteller: Micro Commercial Co
Description: MOSFET N-CH 30 40A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
Description: MOSFET N-CH 30 40A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
auf Bestellung 3811 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.60 EUR |
18+ | 1.00 EUR |
100+ | 0.65 EUR |
500+ | 0.50 EUR |
1000+ | 0.45 EUR |
2000+ | 0.41 EUR |
NTD40N03R-001 |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/32A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Description: MOSFET N-CH 25V 7.8A/32A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
auf Bestellung 2265 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2265+ | 0.24 EUR |
NTD40N03R-1G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Description: MOSFET N-CH 25V 7.8A/32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
auf Bestellung 350103 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1402+ | 0.35 EUR |
NTD40N03RT4 |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
auf Bestellung 6670 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2219+ | 0.24 EUR |
OSX040N03-C |
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Hersteller: ATGBICS
Description: Compatible SFP+ 10G
Packaging: Retail Package
Connector Type: LC Duplex
Wavelength: 850nm
Mounting Type: Pluggable, SFP+
Voltage - Supply: 3.3V
Applications: Networking, General Purpose
Data Rate: 10Gbps
Part Status: Active
Description: Compatible SFP+ 10G
Packaging: Retail Package
Connector Type: LC Duplex
Wavelength: 850nm
Mounting Type: Pluggable, SFP+
Voltage - Supply: 3.3V
Applications: Networking, General Purpose
Data Rate: 10Gbps
Part Status: Active
auf Bestellung 3747 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 60.65 EUR |
50+ | 57.62 EUR |
150+ | 54.59 EUR |
1000+ | 51.56 EUR |
RTR040N03HZGTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.31 EUR |
RTR040N03HZGTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9147 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.78 EUR |
16+ | 1.11 EUR |
100+ | 0.72 EUR |
500+ | 0.56 EUR |
1000+ | 0.51 EUR |
RTR040N03HZGTL |
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Hersteller: ROHM Semiconductor
MOSFETs Nch 30V 4A Small Signal MOSFET for Automotive. RTR040N03HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications.
MOSFETs Nch 30V 4A Small Signal MOSFET for Automotive. RTR040N03HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications.
auf Bestellung 4685 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 1.07 EUR |
10+ | 0.91 EUR |
100+ | 0.65 EUR |
500+ | 0.53 EUR |
1000+ | 0.48 EUR |
3000+ | 0.37 EUR |
RTR040N03TL | ![]() |
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Hersteller: VBsemi
30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs RTR040N03TL TRTR040N03TL VBS
Anzahl je Verpackung: 50 Stücke
30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs RTR040N03TL TRTR040N03TL VBS
Anzahl je Verpackung: 50 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.57 EUR |
RTR040N03TL | ![]() |
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Hersteller: ROHM Semiconductor
MOSFETs 2.5V Drive N-Chan
MOSFETs 2.5V Drive N-Chan
auf Bestellung 2137 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 0.80 EUR |
10+ | 0.67 EUR |
100+ | 0.45 EUR |
1000+ | 0.25 EUR |
3000+ | 0.23 EUR |
9000+ | 0.21 EUR |
24000+ | 0.19 EUR |
TSM240N03CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 4.1A
On-state resistance: 24mΩ
Power dissipation: 1.56W
Gate charge: 4.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 4.1A
On-state resistance: 24mΩ
Power dissipation: 1.56W
Gate charge: 4.1nC
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
116+ | 0.62 EUR |
166+ | 0.43 EUR |
232+ | 0.31 EUR |
246+ | 0.29 EUR |
TSM240N03CX RFG |
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Hersteller: Taiwan Semiconductor Co., Ltd.
Transistor N-Channel MOSFET; 30V; 20V; 34mOhm; 6,5A; 1,56W; -55°C ~ 150°C; TSM240N03CX RFG TSM240N03CX TTSM240n03cx
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 34mOhm; 6,5A; 1,56W; -55°C ~ 150°C; TSM240N03CX RFG TSM240N03CX TTSM240n03cx
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.36 EUR |
TSM240N03CX RFG |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 49798 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 1.00 EUR |
29+ | 0.63 EUR |
100+ | 0.40 EUR |
500+ | 0.30 EUR |
1000+ | 0.27 EUR |
TSM240N03CX RFG |
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Hersteller: Taiwan Semiconductor
MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
auf Bestellung 19658 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 0.70 EUR |
10+ | 0.50 EUR |
100+ | 0.34 EUR |
1000+ | 0.27 EUR |
3000+ | 0.17 EUR |
TSM240N03CX RFG |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 6.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.17 EUR |
TSM240N03CX RFG-ML |
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
299+ | 0.06 EUR |
1000+ | 0.06 EUR |
3000+ | 0.05 EUR |
6000+ | 0.05 EUR |
15000+ | 0.05 EUR |
30000+ | 0.05 EUR |
75000+ | 0.05 EUR |
150000+ | 0.04 EUR |
TSM240N03CX6 RFG |
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Hersteller: Taiwan Semiconductor
MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
MOSFETs 30V, 6.5A, Single N-Channel Power MOSFET
auf Bestellung 11343 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 0.70 EUR |
10+ | 0.58 EUR |
100+ | 0.51 EUR |
24000+ | 0.21 EUR |
TSM240N03CX6 RFG |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 6.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.23 EUR |
TSM240N03CX6 RFG |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 6.5A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 6.5A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
auf Bestellung 11512 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.16 EUR |
25+ | 0.72 EUR |
100+ | 0.46 EUR |
500+ | 0.35 EUR |
1000+ | 0.32 EUR |
WMB040N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PDFN5060-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PDFN5060-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
190+ | 0.38 EUR |
211+ | 0.34 EUR |
268+ | 0.27 EUR |
283+ | 0.25 EUR |
WMQ040N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PDFN3030-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PDFN3030-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
203+ | 0.35 EUR |
247+ | 0.29 EUR |
315+ | 0.23 EUR |
334+ | 0.21 EUR |
WMQ40N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PDFN3030-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PDFN3030-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
271+ | 0.26 EUR |
323+ | 0.22 EUR |
343+ | 0.21 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
AP40N03GH |
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AP40N03H |
Hersteller: ANPEC
07+
07+
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AP40N03H |
Hersteller: ANPEC
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AP40N03J |
Hersteller: ANPEC
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AP40N03J |
Hersteller: ANPEC
07+
07+
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AP40N03S |
Hersteller: AP
03+
03+
auf Bestellung 624 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BSO040N03MS G |
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BSO040N03MSG |
Hersteller: INF
08+
08+
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BSO040N03MSGXUMA1 |
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Hersteller: Infineon
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQB140N03L |
Hersteller: FAIRCHILD
SOT-263
SOT-263
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQB140N03L |
Hersteller: fairchild
to-263/d2-pak
to-263/d2-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQB140N03L |
Hersteller: FAIRCHILD
07+ SOT-263
07+ SOT-263
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQB140N03LTM |
auf Bestellung 545 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
MTD40N03RT4G |
Hersteller: ON
09+
09+
auf Bestellung 2518 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
NTD40N03G |
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
NTD40N03R |
Hersteller: ON
07+ SOT-252
07+ SOT-252
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
NTD40N03R |
Hersteller: ON
SOT-252
SOT-252
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
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