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SPW35N60C3 SPW35N60C3
Produktcode: 48611
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Infineon Infineon-SPW35N60C3-DS-v02_05-en.pdf?fileId=db3a3043163797a601163899b120016f Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 01.06.1934
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 4500/150
JHGF: THT
auf Bestellung 46 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
5N60 to-220/f AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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5N60 AAT TO-220/F 08+
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5N6001
auf Bestellung 2500 Stücke:
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5N60C FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
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AL02BT5N602 AL02BT5N602 Viking VIKING-AL.pdf Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Mounting: SMD
Operating current: 0.31A
Tolerance: ±0,1nH
Inductance: 5.6nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resistance: 0.7Ω
Case - mm: 1005
Case - inch: 0402
Resonant frequency: 6GHz
auf Bestellung 4296 Stücke:
Lieferzeit 14-21 Tag (e)
2600+0.03 EUR
3800+0.02 EUR
Mindestbestellmenge: 2600
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AL02BT5N602 AL02BT5N602 Viking VIKING-AL.pdf Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Mounting: SMD
Operating current: 0.31A
Tolerance: ±0,1nH
Inductance: 5.6nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resistance: 0.7Ω
Case - mm: 1005
Case - inch: 0402
Resonant frequency: 6GHz
Anzahl je Verpackung: 100 Stücke
auf Bestellung 4296 Stücke:
Lieferzeit 7-14 Tag (e)
2600+0.03 EUR
3800+0.02 EUR
4300+0.02 EUR
Mindestbestellmenge: 2600
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FCD5N60TM Fairchild fcu5n60-d.pdf Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.81 EUR
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FCD5N60TM FCD5N60TM onsemi fcu5n60-d.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 4971 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.07 EUR
10+2.61 EUR
100+1.79 EUR
500+1.43 EUR
1000+1.32 EUR
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FCD5N60TM FCD5N60TM onsemi fcu5n60-d.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.20 EUR
Mindestbestellmenge: 2500
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FCD5N60TM-WS FCD5N60TM-WS onsemi / Fairchild fcu5n60-d.pdf MOSFETs 600V 4.6A N-Channel
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.69 EUR
10+2.06 EUR
100+1.59 EUR
500+1.30 EUR
1000+1.23 EUR
Mindestbestellmenge: 2
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FCH165N60E FCH165N60E onsemi fch165n60e-d.pdf Description: MOSFET N-CH 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
auf Bestellung 1633 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.29 EUR
30+4.86 EUR
Mindestbestellmenge: 3
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FCH165N60E FCH165N60E onsemi / Fairchild fch165n60e-d.pdf MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.02 EUR
30+5.02 EUR
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FCP165N60E FCP165N60E onsemi / Fairchild fcp165n60e-d.pdf MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 3664 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.98 EUR
10+3.94 EUR
50+3.92 EUR
100+3.36 EUR
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FDD5N60NZTM FDD5N60NZTM ONSEMI fdd5n60nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2457 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
75+0.96 EUR
91+0.79 EUR
97+0.74 EUR
500+0.72 EUR
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FDD5N60NZTM FDD5N60NZTM ONSEMI fdd5n60nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2457 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
75+0.96 EUR
91+0.79 EUR
97+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 66
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FDD5N60NZTM FDD5N60NZTM onsemi fdd5n60nz-d.pdf Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.73 EUR
5000+0.72 EUR
Mindestbestellmenge: 2500
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FDD5N60NZTM FDD5N60NZTM onsemi fdd5n60nz-d.pdf Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 41223 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
10+1.78 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
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FDD5N60NZTM FDD5N60NZTM onsemi / Fairchild fdd5n60nz-d.pdf MOSFETs N-Channel 600V 4A
auf Bestellung 14234 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.74 EUR
10+1.62 EUR
100+1.05 EUR
500+0.85 EUR
1000+0.78 EUR
2500+0.74 EUR
Mindestbestellmenge: 2
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FQD5N60CTM FQD5N60CTM onsemi fqu5n60c-d.pdf Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 11405 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
10+1.87 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.91 EUR
Mindestbestellmenge: 6
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FQD5N60CTM FQD5N60CTM onsemi fqu5n60c-d.pdf Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.82 EUR
5000+0.76 EUR
Mindestbestellmenge: 2500
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FQP5N60C Fairchild fqpf5n60c-d.pdf FAIRS46444-1.pdf?t.download=true&u=5oefqw N-MOSFET 600V 4.5A 2.5Ω 100W FQP5N60C FAI TFQP5n60c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.17 EUR
Mindestbestellmenge: 10
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IGB15N60TATMA1 IGB15N60TATMA1 INFINEON TECHNOLOGIES IGB15N60T-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
35+2.07 EUR
50+1.43 EUR
53+1.36 EUR
Mindestbestellmenge: 29
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IGB15N60TATMA1 IGB15N60TATMA1 INFINEON TECHNOLOGIES IGB15N60T-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.49 EUR
35+2.07 EUR
50+1.43 EUR
53+1.36 EUR
Mindestbestellmenge: 29
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IGB15N60TATMA1 IGB15N60TATMA1 Infineon Technologies Infineon_IGB15N60T_DataSheet_v02_06_EN-3361594.pdf IGBTs LOW LOSS IGBT TECH 600V 15A
auf Bestellung 1526 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.75 EUR
10+2.25 EUR
100+1.60 EUR
500+1.31 EUR
1000+1.24 EUR
2000+1.20 EUR
Mindestbestellmenge: 2
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IGP15N60T IGP15N60T Infineon Technologies Infineon_IGP15N60T_DS_v02_04_EN-1890398.pdf IGBTs LOW LOSS IGBT TECH 600V 15A
auf Bestellung 8336 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.75 EUR
10+1.45 EUR
100+1.35 EUR
250+1.10 EUR
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IGP15N60TXKSA1 IGP15N60TXKSA1 Infineon Technologies IGP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b84fabee78ad Description: IGBT TRENCH FS 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.84 EUR
50+1.87 EUR
100+1.68 EUR
Mindestbestellmenge: 5
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IGW75N60TFKSA1 Infineon IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60 Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.65 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 Infineon IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60 Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.65 EUR
Mindestbestellmenge: 5
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IGW75N60TFKSA1 IGW75N60TFKSA1 Infineon Technologies Infineon_IGW75N60T_DataSheet_v02_07_EN-3361881.pdf IGBTs LOW LOSS IGBT TECH 600V 75A
auf Bestellung 402 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.68 EUR
25+5.12 EUR
100+4.61 EUR
240+4.42 EUR
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IGW75N60TFKSA1 IGW75N60TFKSA1 Infineon Technologies IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60 Description: IGBT TRENCH FS 600V 150A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.77 EUR
30+6.14 EUR
120+5.12 EUR
510+4.38 EUR
Mindestbestellmenge: 2
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IKB15N60T IKB15N60T Infineon Technologies Infineon_IKB15N60T_DataSheet_v02_08_EN-3362047.pdf IGBTs LOW LOSS DuoPack 600V 15A
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.78 EUR
10+2.90 EUR
100+2.04 EUR
500+1.69 EUR
1000+1.61 EUR
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IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES IKB15N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
22+3.29 EUR
28+2.65 EUR
29+2.49 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES IKB15N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 832 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.66 EUR
22+3.29 EUR
28+2.65 EUR
29+2.49 EUR
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IKB15N60TATMA1 IKB15N60TATMA1 Infineon Technologies Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1549 Stücke:
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IKB15N60TATMA1 IKB15N60TATMA1 Infineon Technologies Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
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IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES IKD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
auf Bestellung 2016 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.97 EUR
43+1.69 EUR
46+1.56 EUR
49+1.47 EUR
50+1.43 EUR
100+1.42 EUR
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IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES IKD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2016 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.97 EUR
43+1.69 EUR
46+1.56 EUR
49+1.47 EUR
50+1.43 EUR
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IKD15N60RATMA1 IKD15N60RATMA1 Infineon Technologies Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2 Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 18616 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.27 EUR
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IKD15N60RATMA1 IKD15N60RATMA1 Infineon Technologies Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2 Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 15000 Stücke:
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IKD15N60RATMA1 IKD15N60RATMA1 Infineon Technologies Infineon_IKD15N60R_DS_v02_04_EN-1226701.pdf IGBTs IGBT w/ INTG DIODE 600V 30A
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1+2.82 EUR
10+1.97 EUR
100+1.47 EUR
250+1.43 EUR
500+1.21 EUR
1000+1.13 EUR
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IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 Infineon Technologies Infineon_IKD15N60RC2_DataSheet_v02_01_EN-3362088.pdf IGBTs 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 1884 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.22 EUR
10+1.66 EUR
100+1.33 EUR
500+1.08 EUR
1000+1.00 EUR
2500+0.95 EUR
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IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 Infineon Technologies Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 2500 Stücke:
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2500+0.92 EUR
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IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 Infineon Technologies Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 4374 Stücke:
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6+3.47 EUR
10+2.22 EUR
100+1.50 EUR
500+1.19 EUR
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IKD15N60RF IKD15N60RF Infineon Technologies Infineon_IKD15N60RF_DS_v02_03_EN-1731524.pdf IGBTs IGBT PRODUCTS TrenchStop RC
auf Bestellung 1666 Stücke:
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10+2.59 EUR
100+2.06 EUR
250+1.90 EUR
500+1.72 EUR
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2500+1.41 EUR
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IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 5444 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.52 EUR
10+2.91 EUR
100+2.00 EUR
500+1.61 EUR
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IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 2500 Stücke:
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IKFW75N60ETXKSA1 IKFW75N60ETXKSA1 Infineon Technologies Infineon_IKFW75N60ET_DS_v02_01_EN-1369189.pdf IGBTs INDUSTRY 14
auf Bestellung 554 Stücke:
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10+10.68 EUR
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IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES IKP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
auf Bestellung 29 Stücke:
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29+2.46 EUR
Mindestbestellmenge: 29
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IKP15N60TXKSA1 Infineon IKP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcf657e035a0 Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1 IKP15N60T TIKP15n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 85 Stücke:
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10+5.04 EUR
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IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES IKP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
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31+2.30 EUR
500+1.42 EUR
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IKW75N60H3FKSA1 IKW75N60H3FKSA1 INFINEON TECHNOLOGIES IKW75N60H3FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IKW75N60H3FKSA1 IKW75N60H3FKSA1 INFINEON TECHNOLOGIES IKW75N60H3FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
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6+11.91 EUR
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IKW75N60H3FKSA1 IKW75N60H3FKSA1 Infineon Technologies Infineon_IKW75N60H3_DataSheet_v01_02_EN-3362438.pdf IGBTs INDUSTRY 14
auf Bestellung 652 Stücke:
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10+13.53 EUR
25+12.83 EUR
100+12.74 EUR
240+7.55 EUR
480+7.53 EUR
1200+7.04 EUR
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IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES IKW75N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 401ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.30 EUR
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IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES IKW75N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 401ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.30 EUR
6+11.91 EUR
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IKW75N60TFKSA1 Infineon IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25 Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C;   IKW75N60T TIKW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8 Stücke:
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5+20.20 EUR
Mindestbestellmenge: 5
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IKW75N60TFKSA1 IKW75N60TFKSA1 Infineon Technologies IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 2106 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.31 EUR
30+8.34 EUR
120+7.04 EUR
510+6.25 EUR
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IXKH35N60C5 IXKH35N60C5 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_super_junction_ixkh35n60c5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
auf Bestellung 343 Stücke:
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2+15.77 EUR
30+11.33 EUR
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IXKK85N60C IXKK85N60C IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkk85n60c_datasheet.pdf.pdf Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
auf Bestellung 138 Stücke:
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SPW35N60C3
Produktcode: 48611
zu Favoriten hinzufügen Lieblingsprodukt

Infineon-SPW35N60C3-DS-v02_05-en.pdf?fileId=db3a3043163797a601163899b120016f
SPW35N60C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 01.06.1934
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 4500/150
JHGF: THT
auf Bestellung 46 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
5N60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
5N60 AAT
TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
5N6001
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
5N60C
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
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AL02BT5N602 VIKING-AL.pdf
AL02BT5N602
Hersteller: Viking
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Mounting: SMD
Operating current: 0.31A
Tolerance: ±0,1nH
Inductance: 5.6nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resistance: 0.7Ω
Case - mm: 1005
Case - inch: 0402
Resonant frequency: 6GHz
auf Bestellung 4296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2600+0.03 EUR
3800+0.02 EUR
Mindestbestellmenge: 2600
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AL02BT5N602 VIKING-AL.pdf
AL02BT5N602
Hersteller: Viking
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Mounting: SMD
Operating current: 0.31A
Tolerance: ±0,1nH
Inductance: 5.6nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resistance: 0.7Ω
Case - mm: 1005
Case - inch: 0402
Resonant frequency: 6GHz
Anzahl je Verpackung: 100 Stücke
auf Bestellung 4296 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2600+0.03 EUR
3800+0.02 EUR
4300+0.02 EUR
Mindestbestellmenge: 2600
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FCD5N60TM fcu5n60-d.pdf
Hersteller: Fairchild
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.81 EUR
Mindestbestellmenge: 20
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FCD5N60TM fcu5n60-d.pdf
FCD5N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 4971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.61 EUR
100+1.79 EUR
500+1.43 EUR
1000+1.32 EUR
Mindestbestellmenge: 5
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FCD5N60TM fcu5n60-d.pdf
FCD5N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.20 EUR
Mindestbestellmenge: 2500
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FCD5N60TM-WS fcu5n60-d.pdf
FCD5N60TM-WS
Hersteller: onsemi / Fairchild
MOSFETs 600V 4.6A N-Channel
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.69 EUR
10+2.06 EUR
100+1.59 EUR
500+1.30 EUR
1000+1.23 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH165N60E fch165n60e-d.pdf
FCH165N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
auf Bestellung 1633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.29 EUR
30+4.86 EUR
Mindestbestellmenge: 3
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FCH165N60E fch165n60e-d.pdf
FCH165N60E
Hersteller: onsemi / Fairchild
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.02 EUR
30+5.02 EUR
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FCP165N60E fcp165n60e-d.pdf
FCP165N60E
Hersteller: onsemi / Fairchild
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 3664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.98 EUR
10+3.94 EUR
50+3.92 EUR
100+3.36 EUR
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FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2457 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
75+0.96 EUR
91+0.79 EUR
97+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 66
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FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2457 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
66+1.09 EUR
75+0.96 EUR
91+0.79 EUR
97+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.73 EUR
5000+0.72 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 41223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.78 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: onsemi / Fairchild
MOSFETs N-Channel 600V 4A
auf Bestellung 14234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.74 EUR
10+1.62 EUR
100+1.05 EUR
500+0.85 EUR
1000+0.78 EUR
2500+0.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQD5N60CTM fqu5n60c-d.pdf
FQD5N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 11405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+1.87 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FQD5N60CTM fqu5n60c-d.pdf
FQD5N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.82 EUR
5000+0.76 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FQP5N60C fqpf5n60c-d.pdf FAIRS46444-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild
N-MOSFET 600V 4.5A 2.5Ω 100W FQP5N60C FAI TFQP5n60c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+3.17 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N60TATMA1 IGB15N60T-DTE.pdf
IGB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
35+2.07 EUR
50+1.43 EUR
53+1.36 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N60TATMA1 IGB15N60T-DTE.pdf
IGB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.49 EUR
35+2.07 EUR
50+1.43 EUR
53+1.36 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N60TATMA1 Infineon_IGB15N60T_DataSheet_v02_06_EN-3361594.pdf
IGB15N60TATMA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 15A
auf Bestellung 1526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.75 EUR
10+2.25 EUR
100+1.60 EUR
500+1.31 EUR
1000+1.24 EUR
2000+1.20 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IGP15N60T Infineon_IGP15N60T_DS_v02_04_EN-1890398.pdf
IGP15N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 15A
auf Bestellung 8336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.75 EUR
10+1.45 EUR
100+1.35 EUR
250+1.10 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IGP15N60TXKSA1 IGP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b84fabee78ad
IGP15N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
50+1.87 EUR
100+1.68 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.65 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.65 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 Infineon_IGW75N60T_DataSheet_v02_07_EN-3361881.pdf
IGW75N60TFKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 75A
auf Bestellung 402 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.68 EUR
25+5.12 EUR
100+4.61 EUR
240+4.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60
IGW75N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 150A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.77 EUR
30+6.14 EUR
120+5.12 EUR
510+4.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60T Infineon_IKB15N60T_DataSheet_v02_08_EN-3362047.pdf
IKB15N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 15A
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.78 EUR
10+2.90 EUR
100+2.04 EUR
500+1.69 EUR
1000+1.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60TATMA1 IKB15N60T.pdf
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.29 EUR
28+2.65 EUR
29+2.49 EUR
Mindestbestellmenge: 20
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IKB15N60TATMA1 IKB15N60T.pdf
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 832 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.29 EUR
28+2.65 EUR
29+2.49 EUR
Mindestbestellmenge: 20
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IKB15N60TATMA1 Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a
IKB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
10+3.30 EUR
100+2.28 EUR
500+1.85 EUR
Mindestbestellmenge: 4
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IKB15N60TATMA1 Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a
IKB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.71 EUR
Mindestbestellmenge: 1000
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IKD15N60RATMA1 IKD15N60R.pdf
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
auf Bestellung 2016 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
43+1.69 EUR
46+1.56 EUR
49+1.47 EUR
50+1.43 EUR
100+1.42 EUR
Mindestbestellmenge: 37
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IKD15N60RATMA1 IKD15N60R.pdf
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2016 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.97 EUR
43+1.69 EUR
46+1.56 EUR
49+1.47 EUR
50+1.43 EUR
100+1.42 EUR
Mindestbestellmenge: 37
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IKD15N60RATMA1 Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2
IKD15N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 18616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
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IKD15N60RATMA1 Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2
IKD15N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.15 EUR
5000+1.10 EUR
Mindestbestellmenge: 2500
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IKD15N60RATMA1 Infineon_IKD15N60R_DS_v02_04_EN-1226701.pdf
IKD15N60RATMA1
Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 30A
auf Bestellung 10440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.82 EUR
10+1.97 EUR
100+1.47 EUR
250+1.43 EUR
500+1.21 EUR
1000+1.13 EUR
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IKD15N60RC2ATMA1 Infineon_IKD15N60RC2_DataSheet_v02_01_EN-3362088.pdf
IKD15N60RC2ATMA1
Hersteller: Infineon Technologies
IGBTs 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 1884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.22 EUR
10+1.66 EUR
100+1.33 EUR
500+1.08 EUR
1000+1.00 EUR
2500+0.95 EUR
Mindestbestellmenge: 2
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IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
IKD15N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.92 EUR
Mindestbestellmenge: 2500
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IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
IKD15N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 4374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.22 EUR
100+1.50 EUR
500+1.19 EUR
1000+1.10 EUR
Mindestbestellmenge: 6
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IKD15N60RF Infineon_IKD15N60RF_DS_v02_03_EN-1731524.pdf
IKD15N60RF
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop RC
auf Bestellung 1666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.12 EUR
10+2.59 EUR
100+2.06 EUR
250+1.90 EUR
500+1.72 EUR
1000+1.48 EUR
2500+1.41 EUR
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IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 5444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
10+2.91 EUR
100+2.00 EUR
500+1.61 EUR
1000+1.48 EUR
Mindestbestellmenge: 4
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IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.35 EUR
Mindestbestellmenge: 2500
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IKFW75N60ETXKSA1 Infineon_IKFW75N60ET_DS_v02_01_EN-1369189.pdf
IKFW75N60ETXKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.56 EUR
10+10.68 EUR
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IKP15N60TXKSA1 IKP15N60T-DTE.pdf
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
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IKP15N60TXKSA1 IKP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcf657e035a0
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1 IKP15N60T TIKP15n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+5.04 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 IKP15N60T-DTE.pdf
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.46 EUR
31+2.30 EUR
500+1.42 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60H3FKSA1 IKW75N60H3FKSA1.pdf
IKW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IKW75N60H3FKSA1 IKW75N60H3FKSA1.pdf
IKW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+23.84 EUR
6+11.91 EUR
Mindestbestellmenge: 3
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IKW75N60H3FKSA1 Infineon_IKW75N60H3_DataSheet_v01_02_EN-3362438.pdf
IKW75N60H3FKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.15 EUR
10+13.53 EUR
25+12.83 EUR
100+12.74 EUR
240+7.55 EUR
480+7.53 EUR
1200+7.04 EUR
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IKW75N60TFKSA1 IKW75N60T.pdf
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 401ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60TFKSA1 IKW75N60T.pdf
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 401ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.30 EUR
6+11.91 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60TFKSA1 IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C;   IKW75N60T TIKW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+20.20 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60TFKSA1 IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25
IKW75N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 2106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.31 EUR
30+8.34 EUR
120+7.04 EUR
510+6.25 EUR
Mindestbestellmenge: 2
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IXKH35N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixkh35n60c5_datasheet.pdf.pdf
IXKH35N60C5
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.77 EUR
30+11.33 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXKK85N60C littelfuse_discrete_mosfets_n-channel_super_junction_ixkk85n60c_datasheet.pdf.pdf
IXKK85N60C
Hersteller: IXYS
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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