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SPW35N60C3 SPW35N60C3
Produktcode: 48611 		Infineon Infineon-SPW35N60C3-DS-v02_05-en.pdf?fileId=db3a3043163797a601163899b120016f Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 01.06.1934
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 4500/150
JHGF: THT
auf Bestellung 47 Stück:
Lieferzeit 21-28 Tag (e)
5N60 to-220/f AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5N60 AAT TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5N6001
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
5N60C FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
AL02BT5N602 AL02BT5N602 Viking VIKING-AL.pdf Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Type of inductor: thin film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Inductance: 5.6nH
Operating current: 0.31A
Resistance: 0.7Ω
Q factor: 16
Test frequency: 500MHz
Resonant frequency: 6GHz
Tolerance: ±0,1nH
Anzahl je Verpackung: 100 Stücke
auf Bestellung 4204 Stücke:
Lieferzeit 7-14 Tag (e)
2700+0.027 EUR
4000+ 0.018 EUR
4300+ 0.017 EUR
Mindestbestellmenge: 2700
BIDD05N60T BIDD05N60T Bourns Bourns_7_25_2022_BIDD05N60T_datasheet-3005219.pdf IGBT Transistors IGBT Discrete 600V, 5A in TO-252
auf Bestellung 24259 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.46 EUR
10+ 2.01 EUR
100+ 1.56 EUR
500+ 1.32 EUR
1000+ 1.08 EUR
2500+ 1.02 EUR
5000+ 0.97 EUR
Mindestbestellmenge: 2
FCD5N60TM Fairchild fcu5n60-d.pdf Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.69 EUR
Mindestbestellmenge: 20
FCD5N60TM FCD5N60TM onsemi fcu5n60-d.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 7425 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
10+ 2.31 EUR
100+ 1.84 EUR
500+ 1.55 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 7
FCD5N60TM FCD5N60TM onsemi fcu5n60-d.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.25 EUR
5000+ 1.21 EUR
Mindestbestellmenge: 2500
FCD5N60TM FCD5N60TM ON Semiconductor fcu5n60-d.pdf Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
FCD5N60TM-WS FCD5N60TM-WS onsemi / Fairchild FCU5N60_D-2311834.pdf MOSFET 600V 4.6A N-Channel
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.13 EUR
10+ 1.92 EUR
100+ 1.72 EUR
250+ 1.7 EUR
500+ 1.53 EUR
1000+ 1.31 EUR
2500+ 1.24 EUR
Mindestbestellmenge: 2
FCD5N60TM-WS FCD5N60TM-WS onsemi fcu5n60-d.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.25 EUR
Mindestbestellmenge: 2500
FCD5N60TM-WS FCD5N60TM-WS onsemi fcu5n60-d.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 3550 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
10+ 2.31 EUR
100+ 1.84 EUR
500+ 1.55 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 7
FDD5N60NZTM FDD5N60NZTM ONSEMI fdd5n60nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
75+ 0.96 EUR
93+ 0.77 EUR
97+ 0.74 EUR
500+ 0.72 EUR
Mindestbestellmenge: 66
FDD5N60NZTM FDD5N60NZTM ONSEMI fdd5n60nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2497 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
75+ 0.96 EUR
93+ 0.77 EUR
97+ 0.74 EUR
500+ 0.72 EUR
Mindestbestellmenge: 66
FDD5N60NZTM FDD5N60NZTM onsemi fdd5n60nz-d.pdf Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.77 EUR
5000+ 0.74 EUR
12500+ 0.7 EUR
Mindestbestellmenge: 2500
FDD5N60NZTM FDD5N60NZTM onsemi / Fairchild FDD5N60NZ_D-2311974.pdf MOSFET N-Channel 600V 4A
auf Bestellung 14990 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.39 EUR
10+ 1.22 EUR
100+ 1.06 EUR
500+ 0.99 EUR
1000+ 0.82 EUR
2500+ 0.73 EUR
Mindestbestellmenge: 3
FDD5N60NZTM FDD5N60NZTM onsemi fdd5n60nz-d.pdf Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 64224 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
12+ 1.53 EUR
100+ 1.19 EUR
500+ 1.01 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
FQP5N60C Fairchild fqpf5n60c-d.pdf FAIRS46444-1.pdf?t.download=true&u=5oefqw N-MOSFET 600V 4.5A 2.5Ω 100W FQP5N60C FAI TFQP5n60c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.23 EUR
Mindestbestellmenge: 10
IGB15N60TATMA1 IGB15N60TATMA1 Infineon Technologies IGB15N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428077f3d42 Description: IGBT TRENCH 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.48 EUR
Mindestbestellmenge: 1000
IGB15N60TATMA1 IGB15N60TATMA1 Infineon Technologies IGB15N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428077f3d42 Description: IGBT TRENCH 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1384 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
10+ 2.6 EUR
100+ 2.07 EUR
500+ 1.75 EUR
Mindestbestellmenge: 6
IGP15N60T IGP15N60T Infineon Technologies Infineon_IGP15N60T_DS_v02_04_EN-1890398.pdf IGBT Transistors LOW LOSS IGBT TECH 600V 15A
auf Bestellung 9038 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.69 EUR
10+ 1.47 EUR
100+ 1.32 EUR
500+ 1.24 EUR
Mindestbestellmenge: 2
IGP15N60TXKSA1 IGP15N60TXKSA1 Infineon Technologies IGP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b84fabee78ad Description: IGBT TRENCH FS 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
50+ 1.61 EUR
100+ 1.33 EUR
500+ 1.2 EUR
Mindestbestellmenge: 9
IGW75N60TFKSA1 Infineon IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60 150A; 600V; 428W; IGBT IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.62 EUR
Mindestbestellmenge: 5
IGW75N60TFKSA1 Infineon IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60 150A; 600V; 428W; IGBT IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.62 EUR
Mindestbestellmenge: 5
IGW75N60TFKSA1 IGW75N60TFKSA1 Infineon Technologies IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60 Description: IGBT TRENCH FS 600V 150A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.63 EUR
30+ 7.63 EUR
120+ 6.54 EUR
Mindestbestellmenge: 2
IKB15N60T IKB15N60T Infineon Technologies Infineon_IKB15N60T_DataSheet_v02_08_EN-3362047.pdf IGBT Transistors LOW LOSS DuoPack 600V 15A
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.84 EUR
10+ 3.06 EUR
100+ 2.53 EUR
250+ 2.34 EUR
500+ 2.13 EUR
1000+ 1.76 EUR
2000+ 1.72 EUR
IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES IKB15N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
22+ 3.29 EUR
28+ 2.62 EUR
29+ 2.47 EUR
Mindestbestellmenge: 20
IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES IKB15N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 848 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.66 EUR
22+ 3.29 EUR
28+ 2.62 EUR
29+ 2.47 EUR
Mindestbestellmenge: 20
IKB15N60TATMA1 IKB15N60TATMA1 Infineon Technologies Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1852 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
10+ 3.2 EUR
100+ 2.55 EUR
500+ 2.15 EUR
Mindestbestellmenge: 5
IKB15N60TATMA1 IKB15N60TATMA1 Infineon Technologies Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.83 EUR
Mindestbestellmenge: 1000
IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES IKD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
39+ 1.84 EUR
47+ 1.54 EUR
50+ 1.46 EUR
500+ 1.4 EUR
Mindestbestellmenge: 35
IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES IKD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2060 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.04 EUR
39+ 1.84 EUR
47+ 1.54 EUR
50+ 1.46 EUR
500+ 1.4 EUR
Mindestbestellmenge: 35
IKD15N60RATMA1 IKD15N60RATMA1 Infineon Technologies Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2 Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 19351 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+ 2.27 EUR
100+ 1.81 EUR
500+ 1.53 EUR
1000+ 1.3 EUR
Mindestbestellmenge: 7
IKD15N60RATMA1 IKD15N60RATMA1 Infineon Technologies Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2 Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.23 EUR
5000+ 1.19 EUR
12500+ 1.15 EUR
Mindestbestellmenge: 2500
IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 Infineon Technologies Infineon_IKD15N60RC2_DataSheet_v02_01_EN-3362088.pdf IGBT Transistors HOME APPLIANCES 14
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.99 EUR
10+ 1.7 EUR
100+ 1.44 EUR
500+ 1.3 EUR
1000+ 1.11 EUR
2500+ 1.04 EUR
5000+ 0.99 EUR
Mindestbestellmenge: 2
IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 Infineon Technologies Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.05 EUR
Mindestbestellmenge: 2500
IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 Infineon Technologies Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 4388 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
10+ 2.07 EUR
100+ 1.61 EUR
500+ 1.37 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 7
IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 5588 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.08 EUR
10+ 2.56 EUR
100+ 2.04 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 6
IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.39 EUR
Mindestbestellmenge: 2500
IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES IKP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
35+ 2.07 EUR
45+ 1.6 EUR
48+ 1.52 EUR
Mindestbestellmenge: 30
IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES IKP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.4 EUR
35+ 2.07 EUR
45+ 1.6 EUR
48+ 1.52 EUR
500+ 1.47 EUR
Mindestbestellmenge: 30
IKP15N60TXKSA1 Infineon IKP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcf657e035a0 30A; 600V; 130W; IGBT w/ Diode IKP15N60TXKSA1 IKP15N60T TIKP15n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.71 EUR
Mindestbestellmenge: 10
IKP15N60TXKSA1 IKP15N60TXKSA1 Infineon Technologies infineon-ikp15n60t-datasheet-v02_05-en.pdf Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1390 Stücke:
Lieferzeit 14-21 Tag (e)
IKW75N60H3FKSA1 IKW75N60H3FKSA1 INFINEON TECHNOLOGIES IKW75N60H3FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.71 EUR
8+ 9.17 EUR
Mindestbestellmenge: 6
IKW75N60H3FKSA1 IKW75N60H3FKSA1 INFINEON TECHNOLOGIES IKW75N60H3FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.71 EUR
8+ 9.17 EUR
Mindestbestellmenge: 6
IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES IKW75N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 401ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.96 EUR
8+ 9.37 EUR
Mindestbestellmenge: 6
IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES IKW75N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 401ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.96 EUR
8+ 9.37 EUR
Mindestbestellmenge: 6
IKW75N60TFKSA1 Infineon IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25 80A; 600V; 428W; IGBT w/ Diode   IKW75N60T TIKW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
5+18.86 EUR
Mindestbestellmenge: 5
IKW75N60TFKSA1 IKW75N60TFKSA1 Infineon Technologies IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 1273 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.75 EUR
30+ 10.97 EUR
120+ 9.81 EUR
510+ 8.66 EUR
1020+ 7.79 EUR
Mindestbestellmenge: 2
IXKN75N60C IXKN75N60C IXYS IXKN75N60C.pdf Description: MOSFET N-CH 600V 75A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
auf Bestellung 491 Stücke:
Lieferzeit 10-14 Tag (e)
1+111 EUR
10+ 100.59 EUR
100+ 90.19 EUR
IXXH75N60B3D1 IXXH75N60B3D1 IXYS media-3321755.pdf IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.88 EUR
10+ 19.29 EUR
30+ 18.76 EUR
60+ 17.72 EUR
120+ 16.68 EUR
270+ 16.16 EUR
510+ 15.1 EUR
IXXH75N60B3D1 IXXH75N60B3D1 IXYS media?resourcetype=datasheets&itemid=8d50aaf0-8c87-41e3-b261-8d96cd4071ed&filename=littelfuse_discrete_igbts_xpt_ixxh75n60b3d1_datasheet.pdf Description: IGBT 600V 160A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.05 EUR
30+ 17.85 EUR
120+ 16.8 EUR
510+ 15.23 EUR
MCU05N60A-TP MCU05N60A-TP Micro Commercial Co MCU05N60A(DPAK).pdf Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 14542 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
12+ 1.48 EUR
100+ 1.15 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 10
MCU05N60A-TP MCU05N60A-TP Micro Commercial Co MCU05N60A(DPAK).pdf Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.75 EUR
5000+ 0.71 EUR
12500+ 0.68 EUR
Mindestbestellmenge: 2500
NTHL185N60S5H NTHL185N60S5H onsemi NTHL185N60S5H_D-2493624.pdf MOSFET Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 15 A, 185 mohm, TO-247
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.41 EUR
10+ 7.08 EUR
25+ 6.67 EUR
100+ 5.72 EUR
250+ 5.39 EUR
450+ 4.7 EUR
900+ 4.24 EUR
NTP125N60S5H NTP125N60S5H onsemi NTP125N60S5H_D-3150505.pdf MOSFET Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 22 A, 125 mohm, TO-220 Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 22 A, 125 mohm, TO-220
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.93 EUR
10+ 4.98 EUR
50+ 3.54 EUR
NVB055N60S5F onsemi NVB055N60S5F_D-3150649.pdf MOSFET Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 45 A, 55 mohm, D2PAK Power MOSFET, N-Channel, SUPERFET V, FRFET, 600V, xxA, 55mohm, D2PAK
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.25 EUR
10+ 9.64 EUR
25+ 8.75 EUR
100+ 8.04 EUR
250+ 7.57 EUR
500+ 7.09 EUR
800+ 6.37 EUR
SIHA105N60EF-GE3 SIHA105N60EF-GE3 Vishay Siliconix siha105n60ef.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
auf Bestellung 1035 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.97 EUR
50+ 4.73 EUR
100+ 4.05 EUR
500+ 3.6 EUR
1000+ 3.08 EUR
Mindestbestellmenge: 3
SPW35N60C3
Produktcode: 48611		 Infineon-SPW35N60C3-DS-v02_05-en.pdf?fileId=db3a3043163797a601163899b120016f
SPW35N60C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 01.06.1934
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 4500/150
JHGF: THT
auf Bestellung 47 Stück:
Lieferzeit 21-28 Tag (e)
5N60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5N60 AAT
TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5N6001
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
5N60C
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
AL02BT5N602 VIKING-AL.pdf
AL02BT5N602
Hersteller: Viking
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Type of inductor: thin film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Inductance: 5.6nH
Operating current: 0.31A
Resistance: 0.7Ω
Q factor: 16
Test frequency: 500MHz
Resonant frequency: 6GHz
Tolerance: ±0,1nH
Anzahl je Verpackung: 100 Stücke
auf Bestellung 4204 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2700+0.027 EUR
4000+ 0.018 EUR
4300+ 0.017 EUR
Mindestbestellmenge: 2700
BIDD05N60T Bourns_7_25_2022_BIDD05N60T_datasheet-3005219.pdf
BIDD05N60T
Hersteller: Bourns
IGBT Transistors IGBT Discrete 600V, 5A in TO-252
auf Bestellung 24259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.46 EUR
10+ 2.01 EUR
100+ 1.56 EUR
500+ 1.32 EUR
1000+ 1.08 EUR
2500+ 1.02 EUR
5000+ 0.97 EUR
Mindestbestellmenge: 2
FCD5N60TM fcu5n60-d.pdf
Hersteller: Fairchild
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+1.69 EUR
Mindestbestellmenge: 20
FCD5N60TM fcu5n60-d.pdf
FCD5N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 7425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.78 EUR
10+ 2.31 EUR
100+ 1.84 EUR
500+ 1.55 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 7
FCD5N60TM fcu5n60-d.pdf
FCD5N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.25 EUR
5000+ 1.21 EUR
Mindestbestellmenge: 2500
FCD5N60TM fcu5n60-d.pdf
FCD5N60TM
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
FCD5N60TM-WS FCU5N60_D-2311834.pdf
FCD5N60TM-WS
Hersteller: onsemi / Fairchild
MOSFET 600V 4.6A N-Channel
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.13 EUR
10+ 1.92 EUR
100+ 1.72 EUR
250+ 1.7 EUR
500+ 1.53 EUR
1000+ 1.31 EUR
2500+ 1.24 EUR
Mindestbestellmenge: 2
FCD5N60TM-WS fcu5n60-d.pdf
FCD5N60TM-WS
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.25 EUR
Mindestbestellmenge: 2500
FCD5N60TM-WS fcu5n60-d.pdf
FCD5N60TM-WS
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 3550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.78 EUR
10+ 2.31 EUR
100+ 1.84 EUR
500+ 1.55 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 7
FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
75+ 0.96 EUR
93+ 0.77 EUR
97+ 0.74 EUR
500+ 0.72 EUR
Mindestbestellmenge: 66
FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2497 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
75+ 0.96 EUR
93+ 0.77 EUR
97+ 0.74 EUR
500+ 0.72 EUR
Mindestbestellmenge: 66
FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.77 EUR
5000+ 0.74 EUR
12500+ 0.7 EUR
Mindestbestellmenge: 2500
FDD5N60NZTM FDD5N60NZ_D-2311974.pdf
FDD5N60NZTM
Hersteller: onsemi / Fairchild
MOSFET N-Channel 600V 4A
auf Bestellung 14990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.39 EUR
10+ 1.22 EUR
100+ 1.06 EUR
500+ 0.99 EUR
1000+ 0.82 EUR
2500+ 0.73 EUR
Mindestbestellmenge: 3
FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 64224 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.88 EUR
12+ 1.53 EUR
100+ 1.19 EUR
500+ 1.01 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
FQP5N60C fqpf5n60c-d.pdf FAIRS46444-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild
N-MOSFET 600V 4.5A 2.5Ω 100W FQP5N60C FAI TFQP5n60c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+3.23 EUR
Mindestbestellmenge: 10
IGB15N60TATMA1 IGB15N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428077f3d42
IGB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.48 EUR
Mindestbestellmenge: 1000
IGB15N60TATMA1 IGB15N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428077f3d42
IGB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.13 EUR
10+ 2.6 EUR
100+ 2.07 EUR
500+ 1.75 EUR
Mindestbestellmenge: 6
IGP15N60T Infineon_IGP15N60T_DS_v02_04_EN-1890398.pdf
IGP15N60T
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS IGBT TECH 600V 15A
auf Bestellung 9038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.69 EUR
10+ 1.47 EUR
100+ 1.32 EUR
500+ 1.24 EUR
Mindestbestellmenge: 2
IGP15N60TXKSA1 IGP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b84fabee78ad
IGP15N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.01 EUR
50+ 1.61 EUR
100+ 1.33 EUR
500+ 1.2 EUR
Mindestbestellmenge: 9
IGW75N60TFKSA1 IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60
Hersteller: Infineon
150A; 600V; 428W; IGBT IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.62 EUR
Mindestbestellmenge: 5
IGW75N60TFKSA1 IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60
Hersteller: Infineon
150A; 600V; 428W; IGBT IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.62 EUR
Mindestbestellmenge: 5
IGW75N60TFKSA1 IGW75N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42817e13d60
IGW75N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 150A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.63 EUR
30+ 7.63 EUR
120+ 6.54 EUR
Mindestbestellmenge: 2
IKB15N60T Infineon_IKB15N60T_DataSheet_v02_08_EN-3362047.pdf
IKB15N60T
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 15A
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.84 EUR
10+ 3.06 EUR
100+ 2.53 EUR
250+ 2.34 EUR
500+ 2.13 EUR
1000+ 1.76 EUR
2000+ 1.72 EUR
IKB15N60TATMA1 IKB15N60T.pdf
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.66 EUR
22+ 3.29 EUR
28+ 2.62 EUR
29+ 2.47 EUR
Mindestbestellmenge: 20
IKB15N60TATMA1 IKB15N60T.pdf
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 848 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.66 EUR
22+ 3.29 EUR
28+ 2.62 EUR
29+ 2.47 EUR
Mindestbestellmenge: 20
IKB15N60TATMA1 Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a
IKB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.85 EUR
10+ 3.2 EUR
100+ 2.55 EUR
500+ 2.15 EUR
Mindestbestellmenge: 5
IKB15N60TATMA1 Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a
IKB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.83 EUR
Mindestbestellmenge: 1000
IKD15N60RATMA1 IKD15N60R.pdf
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
35+2.04 EUR
39+ 1.84 EUR
47+ 1.54 EUR
50+ 1.46 EUR
500+ 1.4 EUR
Mindestbestellmenge: 35
IKD15N60RATMA1 IKD15N60R.pdf
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2060 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.04 EUR
39+ 1.84 EUR
47+ 1.54 EUR
50+ 1.46 EUR
500+ 1.4 EUR
Mindestbestellmenge: 35
IKD15N60RATMA1 Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2
IKD15N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 19351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.73 EUR
10+ 2.27 EUR
100+ 1.81 EUR
500+ 1.53 EUR
1000+ 1.3 EUR
Mindestbestellmenge: 7
IKD15N60RATMA1 Infineon-IKD15N60R-DS-v02_04-en.pdf?fileId=db3a30433c5c92fb013c5e03026003b2
IKD15N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.23 EUR
5000+ 1.19 EUR
12500+ 1.15 EUR
Mindestbestellmenge: 2500
IKD15N60RC2ATMA1 Infineon_IKD15N60RC2_DataSheet_v02_01_EN-3362088.pdf
IKD15N60RC2ATMA1
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.99 EUR
10+ 1.7 EUR
100+ 1.44 EUR
500+ 1.3 EUR
1000+ 1.11 EUR
2500+ 1.04 EUR
5000+ 0.99 EUR
Mindestbestellmenge: 2
IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
IKD15N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.05 EUR
Mindestbestellmenge: 2500
IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
IKD15N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 4388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.53 EUR
10+ 2.07 EUR
100+ 1.61 EUR
500+ 1.37 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 7
IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 5588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.08 EUR
10+ 2.56 EUR
100+ 2.04 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 6
IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.39 EUR
Mindestbestellmenge: 2500
IKP15N60TXKSA1 IKP15N60T-DTE.pdf
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
30+2.4 EUR
35+ 2.07 EUR
45+ 1.6 EUR
48+ 1.52 EUR
Mindestbestellmenge: 30
IKP15N60TXKSA1 IKP15N60T-DTE.pdf
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.4 EUR
35+ 2.07 EUR
45+ 1.6 EUR
48+ 1.52 EUR
500+ 1.47 EUR
Mindestbestellmenge: 30
IKP15N60TXKSA1 IKP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcf657e035a0
Hersteller: Infineon
30A; 600V; 130W; IGBT w/ Diode IKP15N60TXKSA1 IKP15N60T TIKP15n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+4.71 EUR
Mindestbestellmenge: 10
IKP15N60TXKSA1 infineon-ikp15n60t-datasheet-v02_05-en.pdf
IKP15N60TXKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1390 Stücke:
Lieferzeit 14-21 Tag (e)
IKW75N60H3FKSA1 IKW75N60H3FKSA1.pdf
IKW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+12.71 EUR
8+ 9.17 EUR
Mindestbestellmenge: 6
IKW75N60H3FKSA1 IKW75N60H3FKSA1.pdf
IKW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+12.71 EUR
8+ 9.17 EUR
Mindestbestellmenge: 6
IKW75N60TFKSA1 IKW75N60T.pdf
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 401ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+12.96 EUR
8+ 9.37 EUR
Mindestbestellmenge: 6
IKW75N60TFKSA1 IKW75N60T.pdf
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 401ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+12.96 EUR
8+ 9.37 EUR
Mindestbestellmenge: 6
IKW75N60TFKSA1 IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25
Hersteller: Infineon
80A; 600V; 428W; IGBT w/ Diode   IKW75N60T TIKW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+18.86 EUR
Mindestbestellmenge: 5
IKW75N60TFKSA1 IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25
IKW75N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 1273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.75 EUR
30+ 10.97 EUR
120+ 9.81 EUR
510+ 8.66 EUR
1020+ 7.79 EUR
Mindestbestellmenge: 2
IXKN75N60C IXKN75N60C.pdf
IXKN75N60C
Hersteller: IXYS
Description: MOSFET N-CH 600V 75A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
auf Bestellung 491 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+111 EUR
10+ 100.59 EUR
100+ 90.19 EUR
IXXH75N60B3D1 media-3321755.pdf
IXXH75N60B3D1
Hersteller: IXYS
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+21.88 EUR
10+ 19.29 EUR
30+ 18.76 EUR
60+ 17.72 EUR
120+ 16.68 EUR
270+ 16.16 EUR
510+ 15.1 EUR
IXXH75N60B3D1 media?resourcetype=datasheets&itemid=8d50aaf0-8c87-41e3-b261-8d96cd4071ed&filename=littelfuse_discrete_igbts_xpt_ixxh75n60b3d1_datasheet.pdf
IXXH75N60B3D1
Hersteller: IXYS
Description: IGBT 600V 160A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22.05 EUR
30+ 17.85 EUR
120+ 16.8 EUR
510+ 15.23 EUR
MCU05N60A-TP MCU05N60A(DPAK).pdf
MCU05N60A-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 14542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.81 EUR
12+ 1.48 EUR
100+ 1.15 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 10
MCU05N60A-TP MCU05N60A(DPAK).pdf
MCU05N60A-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.75 EUR
5000+ 0.71 EUR
12500+ 0.68 EUR
Mindestbestellmenge: 2500
NTHL185N60S5H NTHL185N60S5H_D-2493624.pdf
NTHL185N60S5H
Hersteller: onsemi
MOSFET Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 15 A, 185 mohm, TO-247
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.41 EUR
10+ 7.08 EUR
25+ 6.67 EUR
100+ 5.72 EUR
250+ 5.39 EUR
450+ 4.7 EUR
900+ 4.24 EUR
NTP125N60S5H NTP125N60S5H_D-3150505.pdf
NTP125N60S5H
Hersteller: onsemi
MOSFET Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 22 A, 125 mohm, TO-220 Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 22 A, 125 mohm, TO-220
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.93 EUR
10+ 4.98 EUR
50+ 3.54 EUR
NVB055N60S5F NVB055N60S5F_D-3150649.pdf
Hersteller: onsemi
MOSFET Power MOSFET, N-Channel, SUPERFET V, FAST, 600 V, 45 A, 55 mohm, D2PAK Power MOSFET, N-Channel, SUPERFET V, FRFET, 600V, xxA, 55mohm, D2PAK
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.25 EUR
10+ 9.64 EUR
25+ 8.75 EUR
100+ 8.04 EUR
250+ 7.57 EUR
500+ 7.09 EUR
800+ 6.37 EUR
SIHA105N60EF-GE3 siha105n60ef.pdf
SIHA105N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
auf Bestellung 1035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.97 EUR
50+ 4.73 EUR
100+ 4.05 EUR
500+ 3.6 EUR
1000+ 3.08 EUR
Mindestbestellmenge: 3
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