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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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IKP15N60TXKSA1 Produktcode: 222031
zu Favoriten hinzufügen
Lieblingsprodukt
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Infineon |
 Transistoren > Transistoren IGBT, LeistungsmoduleGehäuse: TO-220 |
auf Bestellung: 20 St.
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SPW35N60C3 Produktcode: 48611
zu Favoriten hinzufügen
Lieblingsprodukt
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Infineon |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Drain-Source-Spannung Uds, V: 650 V Drain-Strom Idd, A: 34,6 A Durchlasswiderstand Rds(on), Ohm: 0,1 Ohm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 4500/150 Montage: THT |
auf Bestellung: 21 St.
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| 5N60 AAT | TO-220/F 08+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| 5N6001 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 5N60C | FAIRCHILD |
auf Bestellung 88800 Stücke: Lieferzeit 21-28 Tag (e) |
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AL02BT5N602 | Viking |
Category: Inductors Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; R: 700mΩ; ±0,1nH Type of inductor: thin film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Inductance: 5.6nH Operating current: 0.31A Resistance: 0.7Ω Resonant frequency: 6GHz Q factor: 16 Test frequency: 500MHz Tolerance: ±0,1nH |
auf Bestellung 2686 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BIDD05N60T | Bourns Inc. |
Description: IGBT TRENCH FS 600V 10A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 7ns/18ns Switching Energy: 200µJ (on), 70µJ (off) Test Condition: 400V, 5A, 10Ohm, 15V Gate Charge: 18.5 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 15 A Power - Max: 82 W |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BIDD05N60T | Bourns Inc. |
Description: IGBT TRENCH FS 600V 10A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 7ns/18ns Switching Energy: 200µJ (on), 70µJ (off) Test Condition: 400V, 5A, 10Ohm, 15V Gate Charge: 18.5 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 15 A Power - Max: 82 W |
auf Bestellung 9834 Stücke: Lieferzeit 10-14 Tag (e) |
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BIDD05N60T | Bourns |
IGBTs IGBT Discrete 600V, 5A in TO-252 |
auf Bestellung 24120 Stücke: Lieferzeit 10-14 Tag (e) |
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DI1A5N60D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.97A; Idm: 6A; 25W Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: DPAK; TO252AA On-state resistance: 8Ω Pulsed drain current: 6A Power dissipation: 25W Gate charge: 7.9nC Polarisation: unipolar Drain current: 0.97A |
auf Bestellung 721 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FCD5N60TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: DPAK On-state resistance: 0.95Ω Power dissipation: 54W Gate charge: 16nC Polarisation: unipolar Technology: SuperFET® Drain current: 2.9A |
auf Bestellung 2478 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FCD5N60TM | Fairchild |
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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FCD5N60TM | onsemi |
Description: MOSFET N-CH 600V 4.6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 1092 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD5N60TM-WS | onsemi |
MOSFETs 600V 4.6A N-Channel |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD5N60TM-WS | onsemi |
Description: MOSFET N-CH 600V 4.6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 2079 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH165N60E | onsemi |
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive |
auf Bestellung 424 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N60E | onsemi |
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive |
auf Bestellung 3129 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5N60NZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±25V Kind of package: reel; tape Case: DPAK On-state resistance: 2Ω Power dissipation: 83W Polarisation: unipolar Drain current: 2.4A |
auf Bestellung 2395 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDD5N60NZTM | onsemi |
MOSFETs N-Channel 600V 4A |
auf Bestellung 4706 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5N60NZTM | onsemi |
Description: MOSFET N-CH 600V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5N60NZTM | onsemi |
Description: MOSFET N-CH 600V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 18161 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD5N60CTM | onsemi |
Description: MOSFET N-CH 600V 2.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 2133 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD5N60CTM | onsemi |
MOSFETs 600V N-Channel Adv Q-FET C-Series |
auf Bestellung 43384 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQP5N60C FAI | Fairchild |
N-MOSFET 600V 4.5A 2.5Ω 100W FQP5N60C TFQP5n60c Anzahl je Verpackung: 10 Stücke |
auf Bestellung 120 Stücke: Lieferzeit 7-14 Tag (e) |
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IGB15N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK Mounting: SMD Type of transistor: IGBT Kind of package: tube Case: D2PAK Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 600V Power dissipation: 130W |
auf Bestellung 831 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGP15N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Case: TO220-3 Gate-emitter voltage: ±20V Collector current: 23A Collector-emitter voltage: 600V Power dissipation: 130W |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IGW75N60T | Infineon |
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60TFKSA1 TIGW75n60t Anzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW75N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 600V Power dissipation: 428W |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKB15N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK Mounting: SMD Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 28ns Kind of package: reel; tape Case: D2PAK Turn-off time: 238ns Gate-emitter voltage: ±20V Collector current: 23A Collector-emitter voltage: 600V Power dissipation: 130W Gate charge: 87nC Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 757 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKD15N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Mounting: SMD Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 26ns Kind of package: reel; tape Case: DPAK Turn-off time: 319ns Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 600V Power dissipation: 250W Gate charge: 90nC Technology: TRENCHSTOP™ RC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 1839 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKD15N60RATMA1 | Infineon Technologies |
IGBTs IGBT w/ INTG DIODE 600V 30A |
auf Bestellung 16250 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/183ns Switching Energy: 370µJ (on), 530µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 30A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/183ns Switching Energy: 370µJ (on), 530µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
auf Bestellung 12842 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RC2ATMA1 | Infineon Technologies |
IGBTs 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package |
auf Bestellung 1577 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RC2ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 28A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 129 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/374ns Switching Energy: 570µJ (on), 350µJ (off) Test Condition: 400V, 15A, 49Ohm, 15V Gate Charge: 72 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 115.4 W |
auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RF | Infineon Technologies |
IGBTs IGBT PRODUCTS TrenchStop RC |
auf Bestellung 1609 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RFATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 30A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/160ns Switching Energy: 270µJ (on), 250µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
auf Bestellung 4882 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RFATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/160ns Switching Energy: 270µJ (on), 250µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IKP15N60T | Infineon |
Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1 IKP15N60TXKSA1 TIKP15n60t Anzahl je Verpackung: 10 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW75N60T | Infineon |
 Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IKW75N60T TIKW75n60tAnzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW75N60T | Infineon |
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IKW75N60TFKSA1 TIKW75n60t Anzahl je Verpackung: 5 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| IKW75N60T | Infineon |
IGBTs - Single, 600V, 80A, TO-247-3 Транзистори |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW75N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 470nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 69ns Turn-off time: 401ns Technology: TRENCHSTOP™ |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKW75N60TFKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 121 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/330ns Switching Energy: 4.5mJ Test Condition: 400V, 75A, 5Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
auf Bestellung 1029 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH75N60B3D1 | IXYS |
Description: IGBT PT 600V 160A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 35ns/118ns Switching Energy: 1.7mJ (on), 1.5mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 750 W |
auf Bestellung 309 Stücke: Lieferzeit 10-14 Tag (e) |
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M83-LML3M5N60-0000-000 | Harwin Inc. |
Description: CONN HEADER R/A 60POS 2MM Features: Mating Flange, Mounting Flange, Mounting Hardware Packaging: Bulk Connector Type: Header Voltage Rating: 120V Current Rating (Amps): 2.2A per Contact Mounting Type: Through Hole, Right Angle Number of Positions: 60 Number of Rows: 3 Style: Board to Board or Cable Operating Temperature: -55°C ~ 125°C Contact Type: Male Pin Fastening Type: Threaded Number of Positions Loaded: All Termination: Solder Material Flammability Rating: UL94 V-0 Contact Material: Phosphor Bronze Insulation Color: Black Pitch - Mating: 0.079" (2.00mm) Contact Finish - Mating: Gold Contact Finish Thickness - Mating: 29.5µin (0.75µm) Contact Shape: Circular Contact Length - Post: 0.157" (4.00mm) Insulation Height: 0.303" (7.70mm) Shrouding: Shrouded - 4 Wall Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled Row Spacing - Mating: 0.079" (2.00mm) |
auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
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MCU05N60A-TP | MCC (Micro Commercial Components) |
Description: MOSFET N-CH 600V 4.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 5200 Stücke: Lieferzeit 10-14 Tag (e) |
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MCU05N60A-TP | MCC (Micro Commercial Components) |
Description: MOSFET N-CH 600V 4.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 5200 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL185N60S5H | onsemi |
MOSFETs SUPERFET5 FAST 185MOHM TO-247-3 |
auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
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NTP185N60S5H | onsemi |
Description: MOSFET N-CH 600V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V Power Dissipation (Max): 116W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 1.4mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
auf Bestellung 692 Stücke: Lieferzeit 10-14 Tag (e) |
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NTP185N60S5H | onsemi |
MOSFETs SUPERFET5 FAST 185MOHM TO220-3 |
auf Bestellung 768 Stücke: Lieferzeit 10-14 Tag (e) |
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NVB055N60S5F | onsemi |
Description: SUPERFET5 FRFET, 55MOHM, D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 5.2mA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4603 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NVB055N60S5F | onsemi |
Description: SUPERFET5 FRFET, 55MOHM, D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 5.2mA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4603 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVB055N60S5F | onsemi |
MOSFETs SUPERFET5 FRFET 55MOHM D2PAK |
auf Bestellung 822 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF125N60FRC_T0_00601 | Panjit International Inc. |
Description: 600V/ 125M / 30A/ SJ MOSFET WITH Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP125N60FRC_T0_00601 | Panjit International Inc. |
Description: 600V/ 125M / 30A/ SJ MOSFET WITH Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Supplier Device Package: TO-220AB-L |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA105N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V |
auf Bestellung 983 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA125N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA155N60EF-GE3 | Vishay Siliconix |
Description: E SERIES POWER MOSFET THIN-LEAD Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V |
auf Bestellung 1804 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA155N60EF-GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 600V |
auf Bestellung 2203 Stücke: Lieferzeit 10-14 Tag (e) |
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| IKP15N60TXKSA1 Produktcode: 222031
zu Favoriten hinzufügen
Lieblingsprodukt
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auf Bestellung: 20 St.
- 20 St. - Lieferzeit 21-28 Tag (e)
| SPW35N60C3 Produktcode: 48611
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 650 V
Drain-Strom Idd, A: 34,6 A
Durchlasswiderstand Rds(on), Ohm: 0,1 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 4500/150
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 650 V
Drain-Strom Idd, A: 34,6 A
Durchlasswiderstand Rds(on), Ohm: 0,1 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 4500/150
Montage: THT
auf Bestellung: 21 St.
- 21 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.23 EUR |
| 5N60 AAT |
TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| 5N60C |
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
| AL02BT5N602 |
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Hersteller: Viking
Category: Inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; R: 700mΩ; ±0,1nH
Type of inductor: thin film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Inductance: 5.6nH
Operating current: 0.31A
Resistance: 0.7Ω
Resonant frequency: 6GHz
Q factor: 16
Test frequency: 500MHz
Tolerance: ±0,1nH
Category: Inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; R: 700mΩ; ±0,1nH
Type of inductor: thin film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Inductance: 5.6nH
Operating current: 0.31A
Resistance: 0.7Ω
Resonant frequency: 6GHz
Q factor: 16
Test frequency: 500MHz
Tolerance: ±0,1nH
auf Bestellung 2686 Stücke:
Lieferzeit 14-21 Tag (e)
| BIDD05N60T |
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Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 10A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/18ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 10Ohm, 15V
Gate Charge: 18.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 82 W
Description: IGBT TRENCH FS 600V 10A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/18ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 10Ohm, 15V
Gate Charge: 18.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 82 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.18 EUR |
| 5000+ | 1.11 EUR |
| BIDD05N60T |
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Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 10A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/18ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 10Ohm, 15V
Gate Charge: 18.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 82 W
Description: IGBT TRENCH FS 600V 10A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/18ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 10Ohm, 15V
Gate Charge: 18.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 82 W
auf Bestellung 9834 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.14 EUR |
| 10+ | 2.65 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.31 EUR |
| BIDD05N60T |
|
Hersteller: Bourns
IGBTs IGBT Discrete 600V, 5A in TO-252
IGBTs IGBT Discrete 600V, 5A in TO-252
auf Bestellung 24120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.02 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.27 EUR |
| 2500+ | 1.17 EUR |
| DI1A5N60D1 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.97A; Idm: 6A; 25W
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK; TO252AA
On-state resistance: 8Ω
Pulsed drain current: 6A
Power dissipation: 25W
Gate charge: 7.9nC
Polarisation: unipolar
Drain current: 0.97A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.97A; Idm: 6A; 25W
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK; TO252AA
On-state resistance: 8Ω
Pulsed drain current: 6A
Power dissipation: 25W
Gate charge: 7.9nC
Polarisation: unipolar
Drain current: 0.97A
auf Bestellung 721 Stücke:
Lieferzeit 14-21 Tag (e)
| FCD5N60TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.95Ω
Power dissipation: 54W
Gate charge: 16nC
Polarisation: unipolar
Technology: SuperFET®
Drain current: 2.9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.95Ω
Power dissipation: 54W
Gate charge: 16nC
Polarisation: unipolar
Technology: SuperFET®
Drain current: 2.9A
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
| FCD5N60TM |
|
Hersteller: Fairchild
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.13 EUR |
| FCD5N60TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 1092 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| 10+ | 3.5 EUR |
| 50+ | 2.68 EUR |
| 100+ | 2.4 EUR |
| 500+ | 1.94 EUR |
| FCD5N60TM-WS |
|
Hersteller: onsemi
MOSFETs 600V 4.6A N-Channel
MOSFETs 600V 4.6A N-Channel
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.26 EUR |
| 10+ | 2.59 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.77 EUR |
| 2500+ | 1.65 EUR |
| FCD5N60TM-WS |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2079 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| 10+ | 3.5 EUR |
| 50+ | 2.68 EUR |
| 100+ | 2.4 EUR |
| 500+ | 1.94 EUR |
| FCH165N60E |
|
Hersteller: onsemi
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.51 EUR |
| 10+ | 7.14 EUR |
| 510+ | 6.76 EUR |
| FCP165N60E |
|
Hersteller: onsemi
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 3129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.97 EUR |
| 10+ | 5.26 EUR |
| 100+ | 4.71 EUR |
| 500+ | 4.52 EUR |
| FDD5N60NZTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 2Ω
Power dissipation: 83W
Polarisation: unipolar
Drain current: 2.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 2Ω
Power dissipation: 83W
Polarisation: unipolar
Drain current: 2.4A
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
| FDD5N60NZTM |
|
Hersteller: onsemi
MOSFETs N-Channel 600V 4A
MOSFETs N-Channel 600V 4A
auf Bestellung 4706 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.64 EUR |
| 10+ | 1.74 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.11 EUR |
| 2500+ | 1 EUR |
| FDD5N60NZTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.95 EUR |
| 5000+ | 0.9 EUR |
| FDD5N60NZTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 18161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.75 EUR |
| 10+ | 2.39 EUR |
| 50+ | 1.8 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.27 EUR |
| FQD5N60CTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 2133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| 10+ | 2.42 EUR |
| 50+ | 1.82 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.29 EUR |
| FQD5N60CTM |
|
Hersteller: onsemi
MOSFETs 600V N-Channel Adv Q-FET C-Series
MOSFETs 600V N-Channel Adv Q-FET C-Series
auf Bestellung 43384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.12 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.08 EUR |
| 2500+ | 1.01 EUR |
| FQP5N60C FAI |
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 3.42 EUR |
| IGB15N60TATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Mounting: SMD
Type of transistor: IGBT
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Power dissipation: 130W
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Mounting: SMD
Type of transistor: IGBT
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Power dissipation: 130W
auf Bestellung 831 Stücke:
Lieferzeit 14-21 Tag (e)
| IGP15N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW75N60T |
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60TFKSA1 TIGW75n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60TFKSA1 TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 11.57 EUR |
| IGW75N60TFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| IKB15N60TATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 28ns
Kind of package: reel; tape
Case: D2PAK
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
Gate charge: 87nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 28ns
Kind of package: reel; tape
Case: D2PAK
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
Gate charge: 87nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 757 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD15N60RATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 26ns
Kind of package: reel; tape
Case: DPAK
Turn-off time: 319ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Power dissipation: 250W
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 26ns
Kind of package: reel; tape
Case: DPAK
Turn-off time: 319ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Power dissipation: 250W
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 1839 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD15N60RATMA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 30A
IGBTs IGBT w/ INTG DIODE 600V 30A
auf Bestellung 16250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.11 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.31 EUR |
| 2500+ | 1.21 EUR |
| IKD15N60RATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.21 EUR |
| 5000+ | 1.13 EUR |
| 7500+ | 1.09 EUR |
| 12500+ | 1.08 EUR |
| IKD15N60RATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 12842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 2.71 EUR |
| 100+ | 1.84 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.34 EUR |
| IKD15N60RC2ATMA1 |
|
Hersteller: Infineon Technologies
IGBTs 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
IGBTs 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 1577 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.12 EUR |
| 2500+ | 1.05 EUR |
| IKD15N60RC2ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.83 EUR |
| 10+ | 2.44 EUR |
| 100+ | 1.64 EUR |
| IKD15N60RF |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop RC
IGBTs IGBT PRODUCTS TrenchStop RC
auf Bestellung 1609 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.74 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.55 EUR |
| 2500+ | 1.46 EUR |
| 5000+ | 1.4 EUR |
| IKD15N60RFATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 4882 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.71 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.54 EUR |
| IKD15N60RFATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.46 EUR |
| IKP15N60T |
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1 IKP15N60TXKSA1 TIKP15n60t
Anzahl je Verpackung: 10 Stücke
Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1 IKP15N60TXKSA1 TIKP15n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 3.21 EUR |
| IKW75N60T |
|
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IKW75N60T TIKW75n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IKW75N60T TIKW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.55 EUR |
| IKW75N60T |
|
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IKW75N60TFKSA1 TIKW75n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IKW75N60TFKSA1 TIKW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.55 EUR |
| IKW75N60T |
|
Hersteller: Infineon
IGBTs - Single, 600V, 80A, TO-247-3 Транзистори
IGBTs - Single, 600V, 80A, TO-247-3 Транзистори
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.54 EUR |
| IKW75N60TFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Technology: TRENCHSTOP™
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW75N60TFKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.91 EUR |
| 30+ | 10.51 EUR |
| 120+ | 8.88 EUR |
| 510+ | 7.69 EUR |
| 1020+ | 7.53 EUR |
| IXXH75N60B3D1 |
|
Hersteller: IXYS
Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
auf Bestellung 309 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.05 EUR |
| 30+ | 13.1 EUR |
| 120+ | 11.14 EUR |
| M83-LML3M5N60-0000-000 |
|
Hersteller: Harwin Inc.
Description: CONN HEADER R/A 60POS 2MM
Features: Mating Flange, Mounting Flange, Mounting Hardware
Packaging: Bulk
Connector Type: Header
Voltage Rating: 120V
Current Rating (Amps): 2.2A per Contact
Mounting Type: Through Hole, Right Angle
Number of Positions: 60
Number of Rows: 3
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 125°C
Contact Type: Male Pin
Fastening Type: Threaded
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Black
Pitch - Mating: 0.079" (2.00mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: 29.5µin (0.75µm)
Contact Shape: Circular
Contact Length - Post: 0.157" (4.00mm)
Insulation Height: 0.303" (7.70mm)
Shrouding: Shrouded - 4 Wall
Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled
Row Spacing - Mating: 0.079" (2.00mm)
Description: CONN HEADER R/A 60POS 2MM
Features: Mating Flange, Mounting Flange, Mounting Hardware
Packaging: Bulk
Connector Type: Header
Voltage Rating: 120V
Current Rating (Amps): 2.2A per Contact
Mounting Type: Through Hole, Right Angle
Number of Positions: 60
Number of Rows: 3
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 125°C
Contact Type: Male Pin
Fastening Type: Threaded
Number of Positions Loaded: All
Termination: Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Black
Pitch - Mating: 0.079" (2.00mm)
Contact Finish - Mating: Gold
Contact Finish Thickness - Mating: 29.5µin (0.75µm)
Contact Shape: Circular
Contact Length - Post: 0.157" (4.00mm)
Insulation Height: 0.303" (7.70mm)
Shrouding: Shrouded - 4 Wall
Insulation Material: Polyphenylene Sulfide (PPS), Glass Filled
Row Spacing - Mating: 0.079" (2.00mm)
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 101.22 EUR |
| 16+ | 83.23 EUR |
| 104+ | 72.94 EUR |
| MCU05N60A-TP |
|
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 5200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.99 EUR |
| MCU05N60A-TP |
|
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 5200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.31 EUR |
| 50+ | 1.73 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.21 EUR |
| NTHL185N60S5H |
|
Hersteller: onsemi
MOSFETs SUPERFET5 FAST 185MOHM TO-247-3
MOSFETs SUPERFET5 FAST 185MOHM TO-247-3
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.65 EUR |
| 10+ | 8.46 EUR |
| 120+ | 6.18 EUR |
| 510+ | 5.59 EUR |
| 1020+ | 5.4 EUR |
| NTP185N60S5H |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.32 EUR |
| 10+ | 5.5 EUR |
| 50+ | 4.28 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.21 EUR |
| NTP185N60S5H |
|
Hersteller: onsemi
MOSFETs SUPERFET5 FAST 185MOHM TO220-3
MOSFETs SUPERFET5 FAST 185MOHM TO220-3
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.9 EUR |
| 10+ | 4.06 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.42 EUR |
| NVB055N60S5F |
|
Hersteller: onsemi
Description: SUPERFET5 FRFET, 55MOHM, D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 5.2mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4603 pF @ 400 V
Qualification: AEC-Q101
Description: SUPERFET5 FRFET, 55MOHM, D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 5.2mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4603 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 7.18 EUR |
| NVB055N60S5F |
|
Hersteller: onsemi
Description: SUPERFET5 FRFET, 55MOHM, D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 5.2mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4603 pF @ 400 V
Qualification: AEC-Q101
Description: SUPERFET5 FRFET, 55MOHM, D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 5.2mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4603 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.42 EUR |
| 10+ | 11.9 EUR |
| 50+ | 9.54 EUR |
| 100+ | 8.79 EUR |
| NVB055N60S5F |
|
Hersteller: onsemi
MOSFETs SUPERFET5 FRFET 55MOHM D2PAK
MOSFETs SUPERFET5 FRFET 55MOHM D2PAK
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.51 EUR |
| 10+ | 9.03 EUR |
| 100+ | 8.29 EUR |
| 500+ | 8.04 EUR |
| PJMF125N60FRC_T0_00601 |
|
Hersteller: Panjit International Inc.
Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB-F
Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB-F
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.19 EUR |
| 10+ | 7.46 EUR |
| 50+ | 5.87 EUR |
| 100+ | 5.36 EUR |
| 500+ | 4.45 EUR |
| PJMP125N60FRC_T0_00601 |
|
Hersteller: Panjit International Inc.
Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Supplier Device Package: TO-220AB-L
Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Supplier Device Package: TO-220AB-L
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.08 EUR |
| 10+ | 7.39 EUR |
| 50+ | 5.81 EUR |
| 100+ | 5.31 EUR |
| 500+ | 4.41 EUR |
| SIHA105N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.72 EUR |
| 10+ | 6.45 EUR |
| 50+ | 5.03 EUR |
| 100+ | 4.58 EUR |
| 500+ | 3.8 EUR |
| SIHA125N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.53 EUR |
| 10+ | 7.02 EUR |
| 50+ | 5.51 EUR |
| 100+ | 5.02 EUR |
| 500+ | 4.16 EUR |
| SIHA155N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
auf Bestellung 1804 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.2 EUR |
| 10+ | 6.07 EUR |
| 50+ | 4.74 EUR |
| 100+ | 4.31 EUR |
| 500+ | 3.55 EUR |
| SIHA155N60EF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 600V
MOSFETs N-CHANNEL 600V
auf Bestellung 2203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.9 EUR |
| 10+ | 4.58 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 3.42 EUR |
| 2000+ | 3.39 EUR |