Suchergebnisse für "5n60" : > 60
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Im Einkaufswagen Stück im Wert von UAH
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SPW35N60C3 Produktcode: 48611
zu Favoriten hinzufügen
Lieblingsprodukt
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Infineon |
![]() Gehäuse: TO-247 Uds,V: 650 Idd,A: 01.06.1934 Rds(on), Ohm: 01.01.2000 Ciss, pF/Qg, nC: 4500/150 JHGF: THT |
auf Bestellung 46 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
5N60 | to-220/f | AAT |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
5N60 AAT | TO-220/F 08+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
5N6001 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
5N60C | FAIRCHILD |
auf Bestellung 88800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AL02BT5N602 | Viking |
![]() Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH Mounting: SMD Operating current: 0.31A Tolerance: ±0,1nH Inductance: 5.6nH Type of inductor: thin film Q factor: 16 Test frequency: 500MHz Resistance: 0.7Ω Case - mm: 1005 Case - inch: 0402 Resonant frequency: 6GHz |
auf Bestellung 4296 Stücke: Lieferzeit 14-21 Tag (e) |
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AL02BT5N602 | Viking |
![]() Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH Mounting: SMD Operating current: 0.31A Tolerance: ±0,1nH Inductance: 5.6nH Type of inductor: thin film Q factor: 16 Test frequency: 500MHz Resistance: 0.7Ω Case - mm: 1005 Case - inch: 0402 Resonant frequency: 6GHz Anzahl je Verpackung: 100 Stücke |
auf Bestellung 4296 Stücke: Lieferzeit 7-14 Tag (e) |
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FCD5N60TM | Fairchild |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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FCD5N60TM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 4971 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD5N60TM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD5N60TM-WS | onsemi / Fairchild |
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auf Bestellung 2172 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH165N60E | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V |
auf Bestellung 1633 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH165N60E | onsemi / Fairchild |
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auf Bestellung 628 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N60E | onsemi / Fairchild |
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auf Bestellung 3664 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5N60NZTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2457 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD5N60NZTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2457 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD5N60NZTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 37500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5N60NZTM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 41223 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD5N60NZTM | onsemi / Fairchild |
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auf Bestellung 14234 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD5N60CTM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 11405 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD5N60CTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP5N60C | Fairchild |
![]() ![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 130 Stücke: Lieferzeit 7-14 Tag (e) |
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IGB15N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK Type of transistor: IGBT Power dissipation: 130W Case: D2PAK Mounting: SMD Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 15A |
auf Bestellung 985 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB15N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK Type of transistor: IGBT Power dissipation: 130W Case: D2PAK Mounting: SMD Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 15A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 985 Stücke: Lieferzeit 7-14 Tag (e) |
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IGB15N60TATMA1 | Infineon Technologies |
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auf Bestellung 1526 Stücke: Lieferzeit 10-14 Tag (e) |
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IGP15N60T | Infineon Technologies |
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auf Bestellung 8336 Stücke: Lieferzeit 10-14 Tag (e) |
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IGP15N60TXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A Supplier Device Package: PG-TO220-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/188ns Switching Energy: 570µJ Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 130 W |
auf Bestellung 351 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW75N60TFKSA1 | Infineon |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW75N60TFKSA1 | Infineon |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW75N60TFKSA1 | Infineon Technologies |
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auf Bestellung 402 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW75N60TFKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/330ns Switching Energy: 4.5mJ Test Condition: 400V, 75A, 5Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
auf Bestellung 784 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB15N60T | Infineon Technologies |
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auf Bestellung 1981 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB15N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 130W Case: D2PAK Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 23A Pulsed collector current: 45A Turn-on time: 28ns Turn-off time: 238ns |
auf Bestellung 832 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB15N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 130W Case: D2PAK Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 23A Pulsed collector current: 45A Turn-on time: 28ns Turn-off time: 238ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 832 Stücke: Lieferzeit 7-14 Tag (e) |
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IKB15N60TATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/188ns Switching Energy: 570µJ Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 130 W |
auf Bestellung 1549 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB15N60TATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/188ns Switching Energy: 570µJ Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 130 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 45A Turn-on time: 26ns Turn-off time: 319ns |
auf Bestellung 2016 Stücke: Lieferzeit 14-21 Tag (e) |
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IKD15N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 45A Turn-on time: 26ns Turn-off time: 319ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2016 Stücke: Lieferzeit 7-14 Tag (e) |
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IKD15N60RATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/183ns Switching Energy: 370µJ (on), 530µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
auf Bestellung 18616 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/183ns Switching Energy: 370µJ (on), 530µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RATMA1 | Infineon Technologies |
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auf Bestellung 10440 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RC2ATMA1 | Infineon Technologies |
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auf Bestellung 1884 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RC2ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 129 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/374ns Switching Energy: 570µJ (on), 350µJ (off) Test Condition: 400V, 15A, 49Ohm, 15V Gate Charge: 72 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 115.4 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RC2ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 129 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/374ns Switching Energy: 570µJ (on), 350µJ (off) Test Condition: 400V, 15A, 49Ohm, 15V Gate Charge: 72 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 115.4 W |
auf Bestellung 4374 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RF | Infineon Technologies |
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auf Bestellung 1666 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RFATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/160ns Switching Energy: 270µJ (on), 250µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
auf Bestellung 5444 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD15N60RFATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/160ns Switching Energy: 270µJ (on), 250µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW75N60ETXKSA1 | Infineon Technologies |
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auf Bestellung 554 Stücke: Lieferzeit 10-14 Tag (e) |
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IKP15N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 130W Case: TO220-3 Mounting: THT Gate charge: 87nC Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 45A |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP15N60TXKSA1 | Infineon |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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IKP15N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 130W Case: TO220-3 Mounting: THT Gate charge: 87nC Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 45A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 225A Turn-on time: 85ns Turn-off time: 332ns |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 225A Turn-on time: 85ns Turn-off time: 332ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW75N60H3FKSA1 | Infineon Technologies |
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auf Bestellung 652 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW75N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 225A Turn-on time: 69ns Turn-off time: 401ns |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW75N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 225A Turn-on time: 69ns Turn-off time: 401ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW75N60TFKSA1 | Infineon |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW75N60TFKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 121 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/330ns Switching Energy: 4.5mJ Test Condition: 400V, 75A, 5Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
auf Bestellung 2106 Stücke: Lieferzeit 10-14 Tag (e) |
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IXKH35N60C5 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V |
auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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IXKK85N60C | IXYS |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: TO-264AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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SPW35N60C3 Produktcode: 48611
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 01.06.1934
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 4500/150
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 01.06.1934
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 4500/150
JHGF: THT
auf Bestellung 46 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
5N60 |
Hersteller: to-220/f
AAT
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
5N60 AAT |
TO-220/F 08+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
5N60C |
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AL02BT5N602 |
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Hersteller: Viking
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Mounting: SMD
Operating current: 0.31A
Tolerance: ±0,1nH
Inductance: 5.6nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resistance: 0.7Ω
Case - mm: 1005
Case - inch: 0402
Resonant frequency: 6GHz
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Mounting: SMD
Operating current: 0.31A
Tolerance: ±0,1nH
Inductance: 5.6nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resistance: 0.7Ω
Case - mm: 1005
Case - inch: 0402
Resonant frequency: 6GHz
auf Bestellung 4296 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2600+ | 0.03 EUR |
3800+ | 0.02 EUR |
AL02BT5N602 |
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Hersteller: Viking
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Mounting: SMD
Operating current: 0.31A
Tolerance: ±0,1nH
Inductance: 5.6nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resistance: 0.7Ω
Case - mm: 1005
Case - inch: 0402
Resonant frequency: 6GHz
Anzahl je Verpackung: 100 Stücke
Category: SMD 0402 inductors
Description: Inductor: thin film; SMD; 0402; 5.6nH; 310mA; 700mΩ; Q: 16; ±0,1nH
Mounting: SMD
Operating current: 0.31A
Tolerance: ±0,1nH
Inductance: 5.6nH
Type of inductor: thin film
Q factor: 16
Test frequency: 500MHz
Resistance: 0.7Ω
Case - mm: 1005
Case - inch: 0402
Resonant frequency: 6GHz
Anzahl je Verpackung: 100 Stücke
auf Bestellung 4296 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2600+ | 0.03 EUR |
3800+ | 0.02 EUR |
4300+ | 0.02 EUR |
FCD5N60TM |
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Hersteller: Fairchild
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK FCD5N60TM TFCD5n60tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.81 EUR |
FCD5N60TM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 4971 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.07 EUR |
10+ | 2.61 EUR |
100+ | 1.79 EUR |
500+ | 1.43 EUR |
1000+ | 1.32 EUR |
FCD5N60TM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.20 EUR |
FCD5N60TM-WS |
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Hersteller: onsemi / Fairchild
MOSFETs 600V 4.6A N-Channel
MOSFETs 600V 4.6A N-Channel
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.69 EUR |
10+ | 2.06 EUR |
100+ | 1.59 EUR |
500+ | 1.30 EUR |
1000+ | 1.23 EUR |
FCH165N60E |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
Description: MOSFET N-CH 600V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V
auf Bestellung 1633 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.29 EUR |
30+ | 4.86 EUR |
FCH165N60E |
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Hersteller: onsemi / Fairchild
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 7.02 EUR |
30+ | 5.02 EUR |
FCP165N60E |
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Hersteller: onsemi / Fairchild
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
MOSFETs 600V 23A N-Chnl SuperFET Easy-Drive
auf Bestellung 3664 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 4.98 EUR |
10+ | 3.94 EUR |
50+ | 3.92 EUR |
100+ | 3.36 EUR |
FDD5N60NZTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2457 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
75+ | 0.96 EUR |
91+ | 0.79 EUR |
97+ | 0.74 EUR |
500+ | 0.72 EUR |
FDD5N60NZTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2457 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
75+ | 0.96 EUR |
91+ | 0.79 EUR |
97+ | 0.74 EUR |
500+ | 0.72 EUR |
FDD5N60NZTM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.73 EUR |
5000+ | 0.72 EUR |
FDD5N60NZTM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 41223 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.82 EUR |
10+ | 1.78 EUR |
100+ | 1.19 EUR |
500+ | 0.94 EUR |
1000+ | 0.86 EUR |
FDD5N60NZTM |
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Hersteller: onsemi / Fairchild
MOSFETs N-Channel 600V 4A
MOSFETs N-Channel 600V 4A
auf Bestellung 14234 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.74 EUR |
10+ | 1.62 EUR |
100+ | 1.05 EUR |
500+ | 0.85 EUR |
1000+ | 0.78 EUR |
2500+ | 0.74 EUR |
FQD5N60CTM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 11405 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 2.94 EUR |
10+ | 1.87 EUR |
100+ | 1.25 EUR |
500+ | 0.99 EUR |
1000+ | 0.91 EUR |
FQD5N60CTM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.82 EUR |
5000+ | 0.76 EUR |
FQP5N60C |
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Hersteller: Fairchild
N-MOSFET 600V 4.5A 2.5Ω 100W FQP5N60C FAI TFQP5n60c
Anzahl je Verpackung: 10 Stücke
N-MOSFET 600V 4.5A 2.5Ω 100W FQP5N60C FAI TFQP5n60c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.17 EUR |
IGB15N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.49 EUR |
35+ | 2.07 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
IGB15N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.49 EUR |
35+ | 2.07 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
IGB15N60TATMA1 |
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Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 15A
IGBTs LOW LOSS IGBT TECH 600V 15A
auf Bestellung 1526 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.75 EUR |
10+ | 2.25 EUR |
100+ | 1.60 EUR |
500+ | 1.31 EUR |
1000+ | 1.24 EUR |
2000+ | 1.20 EUR |
IGP15N60T |
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Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 15A
IGBTs LOW LOSS IGBT TECH 600V 15A
auf Bestellung 8336 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.75 EUR |
10+ | 1.45 EUR |
100+ | 1.35 EUR |
250+ | 1.10 EUR |
IGP15N60TXKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
Description: IGBT TRENCH FS 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.84 EUR |
50+ | 1.87 EUR |
100+ | 1.68 EUR |
IGW75N60TFKSA1 |
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Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.65 EUR |
IGW75N60TFKSA1 |
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Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1 IGW75N60T TIGW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.65 EUR |
IGW75N60TFKSA1 |
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Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 75A
IGBTs LOW LOSS IGBT TECH 600V 75A
auf Bestellung 402 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.68 EUR |
25+ | 5.12 EUR |
100+ | 4.61 EUR |
240+ | 4.42 EUR |
IGW75N60TFKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 150A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Description: IGBT TRENCH FS 600V 150A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.77 EUR |
30+ | 6.14 EUR |
120+ | 5.12 EUR |
510+ | 4.38 EUR |
IKB15N60T |
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Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 15A
IGBTs LOW LOSS DuoPack 600V 15A
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 3.78 EUR |
10+ | 2.90 EUR |
100+ | 2.04 EUR |
500+ | 1.69 EUR |
1000+ | 1.61 EUR |
IKB15N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
22+ | 3.29 EUR |
28+ | 2.65 EUR |
29+ | 2.49 EUR |
IKB15N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 832 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
22+ | 3.29 EUR |
28+ | 2.65 EUR |
29+ | 2.49 EUR |
IKB15N60TATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.09 EUR |
10+ | 3.30 EUR |
100+ | 2.28 EUR |
500+ | 1.85 EUR |
IKB15N60TATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.71 EUR |
IKD15N60RATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
auf Bestellung 2016 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
43+ | 1.69 EUR |
46+ | 1.56 EUR |
49+ | 1.47 EUR |
50+ | 1.43 EUR |
100+ | 1.42 EUR |
IKD15N60RATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 26ns
Turn-off time: 319ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2016 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
43+ | 1.69 EUR |
46+ | 1.56 EUR |
49+ | 1.47 EUR |
50+ | 1.43 EUR |
100+ | 1.42 EUR |
IKD15N60RATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 18616 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.94 EUR |
10+ | 2.53 EUR |
100+ | 1.72 EUR |
500+ | 1.38 EUR |
1000+ | 1.27 EUR |
IKD15N60RATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 370µJ (on), 530µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.15 EUR |
5000+ | 1.10 EUR |
IKD15N60RATMA1 |
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Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 30A
IGBTs IGBT w/ INTG DIODE 600V 30A
auf Bestellung 10440 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 2.82 EUR |
10+ | 1.97 EUR |
100+ | 1.47 EUR |
250+ | 1.43 EUR |
500+ | 1.21 EUR |
1000+ | 1.13 EUR |
IKD15N60RC2ATMA1 |
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Hersteller: Infineon Technologies
IGBTs 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
IGBTs 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 1884 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.22 EUR |
10+ | 1.66 EUR |
100+ | 1.33 EUR |
500+ | 1.08 EUR |
1000+ | 1.00 EUR |
2500+ | 0.95 EUR |
IKD15N60RC2ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.92 EUR |
IKD15N60RC2ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 4374 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.47 EUR |
10+ | 2.22 EUR |
100+ | 1.50 EUR |
500+ | 1.19 EUR |
1000+ | 1.10 EUR |
IKD15N60RF |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop RC
IGBTs IGBT PRODUCTS TrenchStop RC
auf Bestellung 1666 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 3.12 EUR |
10+ | 2.59 EUR |
100+ | 2.06 EUR |
250+ | 1.90 EUR |
500+ | 1.72 EUR |
1000+ | 1.48 EUR |
2500+ | 1.41 EUR |
IKD15N60RFATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 5444 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.52 EUR |
10+ | 2.91 EUR |
100+ | 2.00 EUR |
500+ | 1.61 EUR |
1000+ | 1.48 EUR |
IKD15N60RFATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.35 EUR |
IKFW75N60ETXKSA1 |
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Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
IGBTs INDUSTRY 14
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 14.56 EUR |
10+ | 10.68 EUR |
IKP15N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.46 EUR |
IKP15N60TXKSA1 |
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Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1 IKP15N60T TIKP15n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1 IKP15N60T TIKP15n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 5.04 EUR |
IKP15N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.46 EUR |
31+ | 2.30 EUR |
500+ | 1.42 EUR |
IKW75N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
IKW75N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
6+ | 11.91 EUR |
IKW75N60H3FKSA1 |
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Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
IGBTs INDUSTRY 14
auf Bestellung 652 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 14.15 EUR |
10+ | 13.53 EUR |
25+ | 12.83 EUR |
100+ | 12.74 EUR |
240+ | 7.55 EUR |
480+ | 7.53 EUR |
1200+ | 7.04 EUR |
IKW75N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 401ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 401ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
IKW75N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 401ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 401ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
6+ | 11.91 EUR |
IKW75N60TFKSA1 |
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Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IKW75N60T TIKW75n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IKW75N60T TIKW75n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 20.20 EUR |
IKW75N60TFKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
auf Bestellung 2106 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.31 EUR |
30+ | 8.34 EUR |
120+ | 7.04 EUR |
510+ | 6.25 EUR |
IXKH35N60C5 |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.77 EUR |
30+ | 11.33 EUR |
IXKK85N60C |
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Hersteller: IXYS
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 54.58 EUR |
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