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IRF840 Vishay irf840_SiHF840_RevD_5-2-16.pdf IRF840.pdf Транз. Пол. БМ N-HEXFET TO220AB Udss=500V; Id=8A; Pdmax=125W; Rds=0,85 Ohm
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
1+5.02 EUR
10+ 4.46 EUR
IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.3 EUR
Mindestbestellmenge: 31
IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.3 EUR
32+ 2.23 EUR
50+ 1.43 EUR
250+ 1.33 EUR
Mindestbestellmenge: 31
IRF840ALPBF IRF840ALPBF Vishay Semiconductors sihf840.pdf MOSFET 500V N-CH HEXFET TO-26
auf Bestellung 9319 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.38 EUR
10+ 3.68 EUR
25+ 3.45 EUR
100+ 2.29 EUR
250+ 2.25 EUR
500+ 2.13 EUR
IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
37+ 1.94 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 31
IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 895 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.36 EUR
37+ 1.94 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 31
IRF840APBF IRF840APBF Vishay Siliconix 91065.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 8607 Stücke:
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6+3.06 EUR
50+ 2.47 EUR
100+ 2.03 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
2000+ 1.38 EUR
5000+ 1.33 EUR
Mindestbestellmenge: 6
IRF840APBF Vishay 91065.pdf Транз. Пол. БМ N-HEXFET TO220AB Udss=500V; Id=8A; Pdmax=125W; Rds=0,85 Ohm
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
1+3.91 EUR
10+ 3.5 EUR
IRF840APBF-BE3 IRF840APBF-BE3 Vishay / Siliconix 91065.pdf MOSFET 500V N-CH MOSFET
auf Bestellung 12319 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.97 EUR
10+ 2.36 EUR
100+ 2.02 EUR
500+ 1.72 EUR
1000+ 1.45 EUR
IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 907 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
49+ 1.49 EUR
55+ 1.32 EUR
63+ 1.14 EUR
67+ 1.07 EUR
Mindestbestellmenge: 44
IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 907 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.66 EUR
49+ 1.49 EUR
55+ 1.32 EUR
63+ 1.14 EUR
67+ 1.07 EUR
Mindestbestellmenge: 44
IRF840ASPBF IRF840ASPBF Vishay Siliconix sihf840.pdf Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 1546 Stücke:
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5+4.03 EUR
50+ 3.25 EUR
100+ 2.67 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 5
IRF840ASPBF IRF840ASPBF Vishay Semiconductors sihf840.pdf MOSFET 500V N-CH HEXFET D2-PA
auf Bestellung 10743 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.17 EUR
10+ 2.45 EUR
100+ 2.29 EUR
500+ 2.25 EUR
1000+ 2.16 EUR
IRF840ASTRRPBF IRF840ASTRRPBF Vishay Semiconductors sihf840.pdf MOSFET 500V N-CH HEXFET D2-PA
auf Bestellung 2297 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.33 EUR
10+ 3.59 EUR
100+ 2.87 EUR
250+ 2.64 EUR
500+ 2.46 EUR
800+ 2.16 EUR
IRF840BPBF IRF840BPBF Vishay Siliconix irf840b.pdf Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
auf Bestellung 5703 Stücke:
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8+2.46 EUR
50+ 1.97 EUR
100+ 1.56 EUR
500+ 1.32 EUR
1000+ 1.08 EUR
2000+ 1.01 EUR
5000+ 0.97 EUR
Mindestbestellmenge: 8
IRF840BPBF-BE3 IRF840BPBF-BE3 Vishay Siliconix irf840b.pdf Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
50+ 1.79 EUR
100+ 1.42 EUR
500+ 1.2 EUR
Mindestbestellmenge: 8
IRF840BPBF-BE3 IRF840BPBF-BE3 Vishay / Siliconix irf840b.pdf MOSFET 500V N-CH HEXFET
auf Bestellung 6760 Stücke:
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2+2.22 EUR
10+ 1.76 EUR
100+ 1.39 EUR
500+ 1.19 EUR
1000+ 0.93 EUR
5000+ 0.89 EUR
10000+ 0.86 EUR
Mindestbestellmenge: 2
IRF840HPBF IRF840HPBF Vishay Semiconductors irf840hpbf.pdf MOSFET Power MOSFET, 850mO 10V
auf Bestellung 1829 Stücke:
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2+2.46 EUR
10+ 2.02 EUR
100+ 1.58 EUR
500+ 1.34 EUR
1000+ 1.09 EUR
2000+ 1.03 EUR
5000+ 0.98 EUR
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IRF840LCLPBF IRF840LCLPBF Vishay Semiconductors sihf840l.pdf description MOSFET MOSFET N-CHANNEL 500V
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.63 EUR
10+ 3.89 EUR
25+ 3.68 EUR
100+ 3.15 EUR
250+ 2.97 EUR
500+ 2.82 EUR
1000+ 2.39 EUR
IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 1369 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
50+ 1.44 EUR
57+ 1.26 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 45
IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1369 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.6 EUR
50+ 1.44 EUR
57+ 1.26 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 45
IRF840LCPBF IRF840LCPBF Vishay Semiconductors 91067.pdf MOSFET 500V N-CH HEXFET
auf Bestellung 6246 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.99 EUR
10+ 2.45 EUR
100+ 2.29 EUR
250+ 2.16 EUR
IRF840LCPBF IRF840LCPBF Vishay Siliconix 91067.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 5778 Stücke:
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6+3.48 EUR
50+ 2.8 EUR
100+ 2.3 EUR
500+ 1.95 EUR
1000+ 1.65 EUR
2000+ 1.57 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 6
IRF840LCPBF-BE3 IRF840LCPBF-BE3 Vishay / Siliconix 91067.pdf MOSFET N-CHANNEL 500V
auf Bestellung 2893 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.99 EUR
10+ 2.69 EUR
2000+ 2.48 EUR
5000+ 2.29 EUR
10000+ 2.22 EUR
IRF840PBF IRF840PBF VISHAY IRF840PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 1247 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
37+ 1.96 EUR
42+ 1.72 EUR
79+ 0.92 EUR
82+ 0.87 EUR
Mindestbestellmenge: 33
IRF840PBF IRF840PBF VISHAY IRF840PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1247 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
37+ 1.96 EUR
42+ 1.72 EUR
79+ 0.92 EUR
82+ 0.87 EUR
Mindestbestellmenge: 33
IRF840PBF IRF840PBF Vishay Siliconix irf840_SiHF840_RevD_5-2-16.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 3048 Stücke:
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6+3.06 EUR
50+ 2.47 EUR
100+ 2.03 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
2000+ 1.38 EUR
Mindestbestellmenge: 6
IRF840PBF IRF840PBF Vishay Semiconductors irf840_SiHF840_RevD_5-2-16.pdf MOSFET 500V N-CH HEXFET
auf Bestellung 6208 Stücke:
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2+2.78 EUR
10+ 2.31 EUR
100+ 1.83 EUR
250+ 1.7 EUR
500+ 1.54 EUR
1000+ 1.37 EUR
2000+ 1.33 EUR
Mindestbestellmenge: 2
IRF840PBF Vishay/IR irf840_SiHF840_RevD_5-2-16.pdf N-канальний ПТ; Udss, В = 500; Id = 8 А; Ptot, Вт = 125; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 1300 @ 25; Qg, нКл = 63 @ 10 В; Rds = 850 мОм @ 4,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; TO-220AB
auf Bestellung 12 Stücke:
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3+3.27 EUR
10+ 2.81 EUR
100+ 2.47 EUR
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IRF840PBF-BE3 IRF840PBF-BE3 Vishay / Siliconix 91070.pdf MOSFET 500V N-CH HEXFET
auf Bestellung 9146 Stücke:
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2+2.78 EUR
10+ 2.31 EUR
100+ 1.83 EUR
300+ 1.7 EUR
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1200+ 1.36 EUR
2700+ 1.33 EUR
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IRF840PBF-BE3 IRF840PBF-BE3 Vishay Siliconix 91070.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 3287 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
10+ 2.55 EUR
100+ 2.03 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
2000+ 1.38 EUR
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IRF840S Siliconix sihf840s.pdf N-MOSFET 8A 500V 125W 0.85Ω IRF840S smd TIRF840s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.53 EUR
Mindestbestellmenge: 20
IRF840S IR sihf840s.pdf Транз. Пол. БМ N-HEXFET D2-Pak Udss=500V; Id=8A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
1+3.06 EUR
10+ 2.98 EUR
IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
61+ 1.17 EUR
71+ 1.02 EUR
75+ 0.96 EUR
250+ 0.93 EUR
Mindestbestellmenge: 54
IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 706 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
61+ 1.17 EUR
71+ 1.02 EUR
75+ 0.96 EUR
250+ 0.93 EUR
Mindestbestellmenge: 54
IRF840SPBF IRF840SPBF Vishay Semiconductors sihf840s.pdf MOSFET 500V N-CH HEXFET D2-PA
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.99 EUR
10+ 2.5 EUR
100+ 1.99 EUR
250+ 1.83 EUR
500+ 1.67 EUR
1000+ 1.47 EUR
IRF840SPBF IRF840SPBF Vishay Siliconix sihf840s.pdf Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1536 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.33 EUR
50+ 2.67 EUR
100+ 2.2 EUR
500+ 1.86 EUR
1000+ 1.58 EUR
Mindestbestellmenge: 6
IRF840SPBF Vishay/IR sihf840s.pdf N-канальний ПТ; Udss, В = 500; Id = 8 А; Ptot, Вт = 3,1; Тип монт. = smd; Ciss, пФ @ Uds, В = 1300 @ 25; Qg, нКл = 63 @ 10 В; Rds = 850 мОм @ 4,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; Ptot2, Вт = 125; D2PAK
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
4+1.96 EUR
10+ 1.68 EUR
100+ 1.48 EUR
Mindestbestellmenge: 4
IRF840STRLPBF IRF840STRLPBF Vishay Semiconductors sihf840s.pdf MOSFET 500V N-CH HEXFET D2-PA
auf Bestellung 4073 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.99 EUR
10+ 2.5 EUR
100+ 1.99 EUR
250+ 1.85 EUR
500+ 1.78 EUR
N25Q256A11EF840E MICRON N25Q256Ax1E.pdf Serial FLASH, Dual/Quad SPI, 256Mbit (64M x 4-bit), 108MHz, 1.7?2.0V, -40?85°C N25Q256A11EF840E MICRON PEF25q256a11ef840e
Anzahl je Verpackung: 2 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
4+9.81 EUR
Mindestbestellmenge: 4
NUF8401MNT4G NUF8401MNT4G onsemi nuf8401mn-d.pdf Description: FILTER RC(PI) 100 OHM/12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 12pF
Height: 0.039" (1.00mm)
Attenuation Value: -25dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 175MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
auf Bestellung 3572 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
27+ 0.67 EUR
28+ 0.65 EUR
50+ 0.63 EUR
100+ 0.6 EUR
250+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 25
NUF8401MNT4G NUF8401MNT4G onsemi NUF8401MN_D-2319365.pdf ESD Suppressors / TVS Diodes Low Cap. 8 line EMI Filter w/ESD
auf Bestellung 14189 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.7 EUR
10+ 0.62 EUR
100+ 0.49 EUR
500+ 0.39 EUR
1000+ 0.36 EUR
4000+ 0.35 EUR
8000+ 0.31 EUR
Mindestbestellmenge: 4
NUF8402MNT4G NUF8402MNT4G onsemi nuf8402mn-d.pdf Description: FILTER RC(PI) 100 OHM/17PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 105MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.44 EUR
8000+ 0.41 EUR
12000+ 0.39 EUR
28000+ 0.38 EUR
Mindestbestellmenge: 4000
NUF8402MNT4G NUF8402MNT4G onsemi NUF8402MN_D-2319198.pdf ESD Suppressors / TVS Diodes 8 Channel EMI Pi Filter w/ESD
auf Bestellung 19175 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.9 EUR
10+ 0.64 EUR
100+ 0.55 EUR
500+ 0.49 EUR
1000+ 0.46 EUR
4000+ 0.43 EUR
Mindestbestellmenge: 4
NUF8402MNT4G NUF8402MNT4G onsemi nuf8402mn-d.pdf Description: FILTER RC(PI) 100 OHM/17PF SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 105MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
auf Bestellung 35463 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
25+ 0.72 EUR
50+ 0.65 EUR
100+ 0.59 EUR
250+ 0.56 EUR
500+ 0.5 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 20
OF84005-FNF OF84005-FNF TE Connectivity / Laird External Antennas Antennas OMNI,FG,840-868MHz , 5dBi
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+206.76 EUR
10+ 197 EUR
25+ 192.79 EUR
100+ 176.26 EUR
PIC16F84-04/P PIC16F84-04/P MICROCHIP TECHNOLOGY pic16f84.pdf Category: 8-bit PIC family
Description: IC: PIC microcontroller; 1.75kB; 4MHz; ICSP; 4÷6VDC; THT; DIP18
Type of integrated circuit: PIC microcontroller
Program memory: 1.75kB
Clock frequency: 4MHz
Interface: ICSP
Supply voltage: 4...6V DC
Mounting: THT
Case: DIP18
Integrated circuit features: PoR; watchdog
Number of inputs/outputs: 13
Number of 8bit timers: 1
Kind of architecture: Harvard 8bit
Family: PIC16
Kind of package: tube
Memory: 64B EEPROM; 1kB SRAM; 1750B FLASH
Operating temperature: 0...70°C
Terminal pitch: 2.54mm
Operating frequency: 0...4MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.41 EUR
25+ 9.4 EUR
100+ 8.92 EUR
Mindestbestellmenge: 8
PIC16F84-04/P PIC16F84-04/P Microchip Technology 30430D.pdf Description: IC MCU 8BIT 1.75KB FLASH 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 4MHz
Program Memory Size: 1.75KB (1K x 14)
RAM Size: 68 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Peripherals: POR, WDT
Supplier Device Package: 18-PDIP
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Verified
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.23 EUR
25+ 10.03 EUR
Mindestbestellmenge: 2
PIC16F84-04/P PIC16F84-04/P Microchip Technology 30430D.pdf 8-bit Microcontrollers - MCU 1.75KB 68 RAM 13 I/O 4MHz PDIP18
auf Bestellung 1828 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.37 EUR
PIC16F84-04/SO PIC16F84-04/SO Microchip Technology 30430D.pdf Description: IC MCU 8BIT 1.75KB FLASH 18SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 1.75KB (1K x 14)
RAM Size: 68 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Peripherals: POR, WDT
Supplier Device Package: 18-SOIC
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Verified
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.91 EUR
25+ 9.72 EUR
100+ 9.7 EUR
Mindestbestellmenge: 2
PIC16LF84-04I/SO PIC16LF84-04I/SO Microchip Technology 30430D.pdf 8-bit Microcontrollers - MCU 1.75KB 68 RAM 13 I/O
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.58 EUR
SEAF8-40-05.0-L-08-3 SEAF8-40-05.0-L-08-3 Samtec Inc. seaf8.pdf Description: CONN HD ARRAY RCPT 0.8MM 8X40POS
Features: Board Guide
Packaging: Cut Tape (CT)
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 320
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 10.0µin (0.25µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 8
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
1+49.12 EUR
10+ 46.5 EUR
25+ 44.76 EUR
50+ 43.65 EUR
100+ 35.63 EUR
SEAF8-40-05.0-S-06-3 SEAF8-40-05.0-S-06-3 Samtec Inc. seaf8.pdf Description: CONN HD ARRAY RCPT 0.8MM 6X40POS
Packaging: Tape & Reel (TR)
Features: Board Guide
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 240
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 6
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
400+28.44 EUR
800+ 27.38 EUR
Mindestbestellmenge: 400
SEAF8-40-05.0-S-06-3 SEAF8-40-05.0-S-06-3 Samtec seaf8-2584265.pdf Board to Board & Mezzanine Connectors 0.80 mm SEARAY High-Speed High-Density Open-Pin-Field Array Socket
auf Bestellung 284 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.12 EUR
10+ 39.86 EUR
25+ 38.37 EUR
50+ 37.44 EUR
100+ 30.54 EUR
250+ 28.28 EUR
SEAF8-40-05.0-S-06-3 SEAF8-40-05.0-S-06-3 Samtec Inc. seaf8.pdf Description: CONN HD ARRAY RCPT 0.8MM 6X40POS
Packaging: Cut Tape (CT)
Features: Board Guide
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 240
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 6
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.4 EUR
10+ 40.13 EUR
25+ 38.63 EUR
50+ 37.69 EUR
100+ 30.75 EUR
SEAF8-40-05.0-S-10-3 SEAF8-40-05.0-S-10-3 Samtec Inc. seaf8.pdf Description: CONN HD ARRAY RCPT .8MM 10X40POS
Features: Board Guide
Packaging: Tape & Reel (TR)
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 400
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 10
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
275+41.21 EUR
Mindestbestellmenge: 275
SEAF8-40-05.0-S-10-3 SEAF8-40-05.0-S-10-3 Samtec Inc. seaf8.pdf Description: CONN HD ARRAY RCPT .8MM 10X40POS
Features: Board Guide
Packaging: Cut Tape (CT)
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 400
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 10
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
1+61.44 EUR
10+ 58.17 EUR
25+ 55.98 EUR
50+ 54.61 EUR
100+ 44.56 EUR
SEAF8-40-05.0S08-3 SEAF8-40-05.0S08-3 Samtec seaf8-2584265.pdf Board to Board & Mezzanine Connectors
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
1+53.7 EUR
10+ 50.85 EUR
25+ 48.93 EUR
50+ 47.73 EUR
100+ 38.95 EUR
250+ 37.28 EUR
400+ 36.06 EUR
SEAF8-40-05.0S10-3 SEAF8-40-05.0S10-3 Samtec seaf8-2584265.pdf Board to Board & Mezzanine Connectors
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
1+61.02 EUR
10+ 57.78 EUR
25+ 55.6 EUR
50+ 54.24 EUR
100+ 46.18 EUR
275+ 43.61 EUR
SEAF8-40-1-S-08-2-RA SEAF8-40-1-S-08-2-RA Samtec seaf8_ra-2089707.pdf Board to Board & Mezzanine Connectors 0.80 mm SEARAY High-Speed High-Density Open-Pin-Field Array Socket
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
1+70.86 EUR
10+ 67.07 EUR
25+ 64.56 EUR
50+ 62.99 EUR
100+ 51.39 EUR
200+ 50.11 EUR
IRF840 irf840_SiHF840_RevD_5-2-16.pdf IRF840.pdf
Hersteller: Vishay
Транз. Пол. БМ N-HEXFET TO220AB Udss=500V; Id=8A; Pdmax=125W; Rds=0,85 Ohm
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+5.02 EUR
10+ 4.46 EUR
IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
31+2.3 EUR
Mindestbestellmenge: 31
IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.3 EUR
32+ 2.23 EUR
50+ 1.43 EUR
250+ 1.33 EUR
Mindestbestellmenge: 31
IRF840ALPBF sihf840.pdf
IRF840ALPBF
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET TO-26
auf Bestellung 9319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.38 EUR
10+ 3.68 EUR
25+ 3.45 EUR
100+ 2.29 EUR
250+ 2.25 EUR
500+ 2.13 EUR
IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
31+2.36 EUR
37+ 1.94 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 31
IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 895 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.36 EUR
37+ 1.94 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 31
IRF840APBF 91065.pdf
IRF840APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 8607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.06 EUR
50+ 2.47 EUR
100+ 2.03 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
2000+ 1.38 EUR
5000+ 1.33 EUR
Mindestbestellmenge: 6
IRF840APBF 91065.pdf
Hersteller: Vishay
Транз. Пол. БМ N-HEXFET TO220AB Udss=500V; Id=8A; Pdmax=125W; Rds=0,85 Ohm
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+3.91 EUR
10+ 3.5 EUR
IRF840APBF-BE3 91065.pdf
IRF840APBF-BE3
Hersteller: Vishay / Siliconix
MOSFET 500V N-CH MOSFET
auf Bestellung 12319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.97 EUR
10+ 2.36 EUR
100+ 2.02 EUR
500+ 1.72 EUR
1000+ 1.45 EUR
IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 907 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
44+1.66 EUR
49+ 1.49 EUR
55+ 1.32 EUR
63+ 1.14 EUR
67+ 1.07 EUR
Mindestbestellmenge: 44
IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 907 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.66 EUR
49+ 1.49 EUR
55+ 1.32 EUR
63+ 1.14 EUR
67+ 1.07 EUR
Mindestbestellmenge: 44
IRF840ASPBF sihf840.pdf
IRF840ASPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 1546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.03 EUR
50+ 3.25 EUR
100+ 2.67 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 5
IRF840ASPBF sihf840.pdf
IRF840ASPBF
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET D2-PA
auf Bestellung 10743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.17 EUR
10+ 2.45 EUR
100+ 2.29 EUR
500+ 2.25 EUR
1000+ 2.16 EUR
IRF840ASTRRPBF sihf840.pdf
IRF840ASTRRPBF
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET D2-PA
auf Bestellung 2297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.33 EUR
10+ 3.59 EUR
100+ 2.87 EUR
250+ 2.64 EUR
500+ 2.46 EUR
800+ 2.16 EUR
IRF840BPBF irf840b.pdf
IRF840BPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
auf Bestellung 5703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
50+ 1.97 EUR
100+ 1.56 EUR
500+ 1.32 EUR
1000+ 1.08 EUR
2000+ 1.01 EUR
5000+ 0.97 EUR
Mindestbestellmenge: 8
IRF840BPBF-BE3 irf840b.pdf
IRF840BPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.22 EUR
50+ 1.79 EUR
100+ 1.42 EUR
500+ 1.2 EUR
Mindestbestellmenge: 8
IRF840BPBF-BE3 irf840b.pdf
IRF840BPBF-BE3
Hersteller: Vishay / Siliconix
MOSFET 500V N-CH HEXFET
auf Bestellung 6760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.22 EUR
10+ 1.76 EUR
100+ 1.39 EUR
500+ 1.19 EUR
1000+ 0.93 EUR
5000+ 0.89 EUR
10000+ 0.86 EUR
Mindestbestellmenge: 2
IRF840HPBF irf840hpbf.pdf
IRF840HPBF
Hersteller: Vishay Semiconductors
MOSFET Power MOSFET, 850mO 10V
auf Bestellung 1829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.46 EUR
10+ 2.02 EUR
100+ 1.58 EUR
500+ 1.34 EUR
1000+ 1.09 EUR
2000+ 1.03 EUR
5000+ 0.98 EUR
Mindestbestellmenge: 2
IRF840LCLPBF description sihf840l.pdf
IRF840LCLPBF
Hersteller: Vishay Semiconductors
MOSFET MOSFET N-CHANNEL 500V
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.63 EUR
10+ 3.89 EUR
25+ 3.68 EUR
100+ 3.15 EUR
250+ 2.97 EUR
500+ 2.82 EUR
1000+ 2.39 EUR
IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 1369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
50+ 1.44 EUR
57+ 1.26 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 45
IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1369 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
50+ 1.44 EUR
57+ 1.26 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 45
IRF840LCPBF 91067.pdf
IRF840LCPBF
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET
auf Bestellung 6246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.99 EUR
10+ 2.45 EUR
100+ 2.29 EUR
250+ 2.16 EUR
IRF840LCPBF 91067.pdf
IRF840LCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 5778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.48 EUR
50+ 2.8 EUR
100+ 2.3 EUR
500+ 1.95 EUR
1000+ 1.65 EUR
2000+ 1.57 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 6
IRF840LCPBF-BE3 91067.pdf
IRF840LCPBF-BE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 500V
auf Bestellung 2893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.99 EUR
10+ 2.69 EUR
2000+ 2.48 EUR
5000+ 2.29 EUR
10000+ 2.22 EUR
IRF840PBF IRF840PBF.pdf
IRF840PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 1247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
33+2.17 EUR
37+ 1.96 EUR
42+ 1.72 EUR
79+ 0.92 EUR
82+ 0.87 EUR
Mindestbestellmenge: 33
IRF840PBF IRF840PBF.pdf
IRF840PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1247 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.17 EUR
37+ 1.96 EUR
42+ 1.72 EUR
79+ 0.92 EUR
82+ 0.87 EUR
Mindestbestellmenge: 33
IRF840PBF irf840_SiHF840_RevD_5-2-16.pdf
IRF840PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 3048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.06 EUR
50+ 2.47 EUR
100+ 2.03 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
2000+ 1.38 EUR
Mindestbestellmenge: 6
IRF840PBF irf840_SiHF840_RevD_5-2-16.pdf
IRF840PBF
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET
auf Bestellung 6208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.78 EUR
10+ 2.31 EUR
100+ 1.83 EUR
250+ 1.7 EUR
500+ 1.54 EUR
1000+ 1.37 EUR
2000+ 1.33 EUR
Mindestbestellmenge: 2
IRF840PBF irf840_SiHF840_RevD_5-2-16.pdf
Hersteller: Vishay/IR
N-канальний ПТ; Udss, В = 500; Id = 8 А; Ptot, Вт = 125; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 1300 @ 25; Qg, нКл = 63 @ 10 В; Rds = 850 мОм @ 4,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; TO-220AB
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+3.27 EUR
10+ 2.81 EUR
100+ 2.47 EUR
Mindestbestellmenge: 3
IRF840PBF-BE3 91070.pdf
IRF840PBF-BE3
Hersteller: Vishay / Siliconix
MOSFET 500V N-CH HEXFET
auf Bestellung 9146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.78 EUR
10+ 2.31 EUR
100+ 1.83 EUR
300+ 1.7 EUR
600+ 1.59 EUR
1200+ 1.36 EUR
2700+ 1.33 EUR
Mindestbestellmenge: 2
IRF840PBF-BE3 91070.pdf
IRF840PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 3287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.06 EUR
10+ 2.55 EUR
100+ 2.03 EUR
500+ 1.72 EUR
1000+ 1.46 EUR
2000+ 1.38 EUR
Mindestbestellmenge: 6
IRF840S sihf840s.pdf
Hersteller: Siliconix
N-MOSFET 8A 500V 125W 0.85Ω IRF840S smd TIRF840s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.53 EUR
Mindestbestellmenge: 20
IRF840S sihf840s.pdf
Hersteller: IR
Транз. Пол. БМ N-HEXFET D2-Pak Udss=500V; Id=8A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+3.06 EUR
10+ 2.98 EUR
IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
61+ 1.17 EUR
71+ 1.02 EUR
75+ 0.96 EUR
250+ 0.93 EUR
Mindestbestellmenge: 54
IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 706 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
61+ 1.17 EUR
71+ 1.02 EUR
75+ 0.96 EUR
250+ 0.93 EUR
Mindestbestellmenge: 54
IRF840SPBF sihf840s.pdf
IRF840SPBF
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET D2-PA
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.99 EUR
10+ 2.5 EUR
100+ 1.99 EUR
250+ 1.83 EUR
500+ 1.67 EUR
1000+ 1.47 EUR
IRF840SPBF sihf840s.pdf
IRF840SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.33 EUR
50+ 2.67 EUR
100+ 2.2 EUR
500+ 1.86 EUR
1000+ 1.58 EUR
Mindestbestellmenge: 6
IRF840SPBF sihf840s.pdf
Hersteller: Vishay/IR
N-канальний ПТ; Udss, В = 500; Id = 8 А; Ptot, Вт = 3,1; Тип монт. = smd; Ciss, пФ @ Uds, В = 1300 @ 25; Qg, нКл = 63 @ 10 В; Rds = 850 мОм @ 4,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; Ptot2, Вт = 125; D2PAK
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+1.96 EUR
10+ 1.68 EUR
100+ 1.48 EUR
Mindestbestellmenge: 4
IRF840STRLPBF sihf840s.pdf
IRF840STRLPBF
Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET D2-PA
auf Bestellung 4073 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.99 EUR
10+ 2.5 EUR
100+ 1.99 EUR
250+ 1.85 EUR
500+ 1.78 EUR
N25Q256A11EF840E N25Q256Ax1E.pdf
Hersteller: MICRON
Serial FLASH, Dual/Quad SPI, 256Mbit (64M x 4-bit), 108MHz, 1.7?2.0V, -40?85°C N25Q256A11EF840E MICRON PEF25q256a11ef840e
Anzahl je Verpackung: 2 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+9.81 EUR
Mindestbestellmenge: 4
NUF8401MNT4G nuf8401mn-d.pdf
NUF8401MNT4G
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 12pF
Height: 0.039" (1.00mm)
Attenuation Value: -25dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 175MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
auf Bestellung 3572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
27+ 0.67 EUR
28+ 0.65 EUR
50+ 0.63 EUR
100+ 0.6 EUR
250+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 25
NUF8401MNT4G NUF8401MN_D-2319365.pdf
NUF8401MNT4G
Hersteller: onsemi
ESD Suppressors / TVS Diodes Low Cap. 8 line EMI Filter w/ESD
auf Bestellung 14189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.7 EUR
10+ 0.62 EUR
100+ 0.49 EUR
500+ 0.39 EUR
1000+ 0.36 EUR
4000+ 0.35 EUR
8000+ 0.31 EUR
Mindestbestellmenge: 4
NUF8402MNT4G nuf8402mn-d.pdf
NUF8402MNT4G
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/17PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 105MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.44 EUR
8000+ 0.41 EUR
12000+ 0.39 EUR
28000+ 0.38 EUR
Mindestbestellmenge: 4000
NUF8402MNT4G NUF8402MN_D-2319198.pdf
NUF8402MNT4G
Hersteller: onsemi
ESD Suppressors / TVS Diodes 8 Channel EMI Pi Filter w/ESD
auf Bestellung 19175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.9 EUR
10+ 0.64 EUR
100+ 0.55 EUR
500+ 0.49 EUR
1000+ 0.46 EUR
4000+ 0.43 EUR
Mindestbestellmenge: 4
NUF8402MNT4G nuf8402mn-d.pdf
NUF8402MNT4G
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/17PF SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 105MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
auf Bestellung 35463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
25+ 0.72 EUR
50+ 0.65 EUR
100+ 0.59 EUR
250+ 0.56 EUR
500+ 0.5 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 20
OF84005-FNF
OF84005-FNF
Hersteller: TE Connectivity / Laird External Antennas
Antennas OMNI,FG,840-868MHz , 5dBi
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+206.76 EUR
10+ 197 EUR
25+ 192.79 EUR
100+ 176.26 EUR
PIC16F84-04/P pic16f84.pdf
PIC16F84-04/P
Hersteller: MICROCHIP TECHNOLOGY
Category: 8-bit PIC family
Description: IC: PIC microcontroller; 1.75kB; 4MHz; ICSP; 4÷6VDC; THT; DIP18
Type of integrated circuit: PIC microcontroller
Program memory: 1.75kB
Clock frequency: 4MHz
Interface: ICSP
Supply voltage: 4...6V DC
Mounting: THT
Case: DIP18
Integrated circuit features: PoR; watchdog
Number of inputs/outputs: 13
Number of 8bit timers: 1
Kind of architecture: Harvard 8bit
Family: PIC16
Kind of package: tube
Memory: 64B EEPROM; 1kB SRAM; 1750B FLASH
Operating temperature: 0...70°C
Terminal pitch: 2.54mm
Operating frequency: 0...4MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.41 EUR
25+ 9.4 EUR
100+ 8.92 EUR
Mindestbestellmenge: 8
PIC16F84-04/P 30430D.pdf
PIC16F84-04/P
Hersteller: Microchip Technology
Description: IC MCU 8BIT 1.75KB FLASH 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 4MHz
Program Memory Size: 1.75KB (1K x 14)
RAM Size: 68 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Peripherals: POR, WDT
Supplier Device Package: 18-PDIP
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Verified
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.23 EUR
25+ 10.03 EUR
Mindestbestellmenge: 2
PIC16F84-04/P 30430D.pdf
PIC16F84-04/P
Hersteller: Microchip Technology
8-bit Microcontrollers - MCU 1.75KB 68 RAM 13 I/O 4MHz PDIP18
auf Bestellung 1828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.37 EUR
PIC16F84-04/SO 30430D.pdf
PIC16F84-04/SO
Hersteller: Microchip Technology
Description: IC MCU 8BIT 1.75KB FLASH 18SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 4MHz
Program Memory Size: 1.75KB (1K x 14)
RAM Size: 68 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64 x 8
Core Processor: PIC
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Peripherals: POR, WDT
Supplier Device Package: 18-SOIC
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Verified
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.91 EUR
25+ 9.72 EUR
100+ 9.7 EUR
Mindestbestellmenge: 2
PIC16LF84-04I/SO 30430D.pdf
PIC16LF84-04I/SO
Hersteller: Microchip Technology
8-bit Microcontrollers - MCU 1.75KB 68 RAM 13 I/O
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.58 EUR
SEAF8-40-05.0-L-08-3 seaf8.pdf
SEAF8-40-05.0-L-08-3
Hersteller: Samtec Inc.
Description: CONN HD ARRAY RCPT 0.8MM 8X40POS
Features: Board Guide
Packaging: Cut Tape (CT)
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 320
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 10.0µin (0.25µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 8
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+49.12 EUR
10+ 46.5 EUR
25+ 44.76 EUR
50+ 43.65 EUR
100+ 35.63 EUR
SEAF8-40-05.0-S-06-3 seaf8.pdf
SEAF8-40-05.0-S-06-3
Hersteller: Samtec Inc.
Description: CONN HD ARRAY RCPT 0.8MM 6X40POS
Packaging: Tape & Reel (TR)
Features: Board Guide
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 240
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 6
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
400+28.44 EUR
800+ 27.38 EUR
Mindestbestellmenge: 400
SEAF8-40-05.0-S-06-3 seaf8-2584265.pdf
SEAF8-40-05.0-S-06-3
Hersteller: Samtec
Board to Board & Mezzanine Connectors 0.80 mm SEARAY High-Speed High-Density Open-Pin-Field Array Socket
auf Bestellung 284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+42.12 EUR
10+ 39.86 EUR
25+ 38.37 EUR
50+ 37.44 EUR
100+ 30.54 EUR
250+ 28.28 EUR
SEAF8-40-05.0-S-06-3 seaf8.pdf
SEAF8-40-05.0-S-06-3
Hersteller: Samtec Inc.
Description: CONN HD ARRAY RCPT 0.8MM 6X40POS
Packaging: Cut Tape (CT)
Features: Board Guide
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 240
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 6
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+42.4 EUR
10+ 40.13 EUR
25+ 38.63 EUR
50+ 37.69 EUR
100+ 30.75 EUR
SEAF8-40-05.0-S-10-3 seaf8.pdf
SEAF8-40-05.0-S-10-3
Hersteller: Samtec Inc.
Description: CONN HD ARRAY RCPT .8MM 10X40POS
Features: Board Guide
Packaging: Tape & Reel (TR)
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 400
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 10
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
275+41.21 EUR
Mindestbestellmenge: 275
SEAF8-40-05.0-S-10-3 seaf8.pdf
SEAF8-40-05.0-S-10-3
Hersteller: Samtec Inc.
Description: CONN HD ARRAY RCPT .8MM 10X40POS
Features: Board Guide
Packaging: Cut Tape (CT)
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 400
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 10
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+61.44 EUR
10+ 58.17 EUR
25+ 55.98 EUR
50+ 54.61 EUR
100+ 44.56 EUR
SEAF8-40-05.0S08-3 seaf8-2584265.pdf
SEAF8-40-05.0S08-3
Hersteller: Samtec
Board to Board & Mezzanine Connectors
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+53.7 EUR
10+ 50.85 EUR
25+ 48.93 EUR
50+ 47.73 EUR
100+ 38.95 EUR
250+ 37.28 EUR
400+ 36.06 EUR
SEAF8-40-05.0S10-3 seaf8-2584265.pdf
SEAF8-40-05.0S10-3
Hersteller: Samtec
Board to Board & Mezzanine Connectors
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+61.02 EUR
10+ 57.78 EUR
25+ 55.6 EUR
50+ 54.24 EUR
100+ 46.18 EUR
275+ 43.61 EUR
SEAF8-40-1-S-08-2-RA seaf8_ra-2089707.pdf
SEAF8-40-1-S-08-2-RA
Hersteller: Samtec
Board to Board & Mezzanine Connectors 0.80 mm SEARAY High-Speed High-Density Open-Pin-Field Array Socket
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+70.86 EUR
10+ 67.07 EUR
25+ 64.56 EUR
50+ 62.99 EUR
100+ 51.39 EUR
200+ 50.11 EUR
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