Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (164374) > Seite 1145 nach 2740
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| STP12NK30Z | STMicroelectronics |
STP12NK30Z THT N channel transistors |
auf Bestellung 102 Stücke: Lieferzeit 7-14 Tag (e) |
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STP12NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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STP12NM50 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.5A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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STP12NM50FP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 550V Drain current: 7.5A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP130N6F7 | STMicroelectronics |
STP130N6F7 THT N channel transistors |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STP13N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 139 Stücke: Lieferzeit 7-14 Tag (e) |
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STP13NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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STP13NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 183 Stücke: Lieferzeit 7-14 Tag (e) |
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STP13NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 6.93A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ || Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP140N6F7 | STMicroelectronics |
STP140N6F7 THT N channel transistors |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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STP140NF55 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 320A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ II Gate charge: 142nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
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STP140NF75 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ III; unipolar; 75V; 100A; 310W Type of transistor: N-MOSFET Technology: STripFET™ III Polarisation: unipolar Drain-source voltage: 75V Drain current: 100A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
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STP14NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 150W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.6A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 110 Stücke: Lieferzeit 7-14 Tag (e) |
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STP14NK50ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 35W; TO220FP Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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STP14NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 40W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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STP150N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 440A Gate charge: 117nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 71 Stücke: Lieferzeit 7-14 Tag (e) |
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STP15N95K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 950V Drain current: 7.6A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 30nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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STP15NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.8A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 110 Stücke: Lieferzeit 7-14 Tag (e) |
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STP160N3LL | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 112A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 112A Power dissipation: 136W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 480A Technology: STripFET™ H6 Gate charge: 42nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 937 Stücke: Lieferzeit 7-14 Tag (e) |
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STP16CP05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO24 Output current: 5...100mA Output voltage: 1.3...20V Number of channels: 16 Integrated circuit features: shift register Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 665 Stücke: Lieferzeit 7-14 Tag (e) |
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STP16CP05TTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; TSSOP24; 5÷100mA; 1.3÷20V; Ch: 16; 30MHz Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: TSSOP24 Output current: 5...100mA Output voltage: 1.3...20V Number of channels: 16 Integrated circuit features: shift register Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1086 Stücke: Lieferzeit 7-14 Tag (e) |
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STP16CPC26PTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; QSOP24; 5÷90mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: QSOP24 Output current: 5...90mA Output voltage: 1.3...20V Number of channels: 16 Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Integrated circuit features: shift register Anzahl je Verpackung: 1 Stücke |
auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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STP16CPC26XTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; TSSOP24; 5÷90mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: TSSOP24 Output current: 5...90mA Output voltage: 1.3...20V Number of channels: 16 Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 722 Stücke: Lieferzeit 7-14 Tag (e) |
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STP16NF06 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1441 Stücke: Lieferzeit 7-14 Tag (e) |
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STP17N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 56A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ K5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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STP17NK40ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 400V Drain current: 9.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STP18N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; Idm: 52A Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Pulsed drain current: 52A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 139 Stücke: Lieferzeit 7-14 Tag (e) |
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STP18NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.285Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35nC Pulsed drain current: 52A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP18NM80 | STMicroelectronics |
STP18NM80 THT N channel transistors |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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STP19NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W Type of transistor: N-MOSFET Technology: MESH OVERLAY™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.45A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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STP19NM50N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 10A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 401 Stücke: Lieferzeit 7-14 Tag (e) |
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STP200N3LL | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Pulsed drain current: 480A Power dissipation: 176.5W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 11.3A; 130W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.3A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20N95K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; Idm: 70A Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 70A Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 11A; 110W; TO220-3 Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 158 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20NM50 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 550V; 20A; 192W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 550V Drain current: 20A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20NM50FD | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 53nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20NM60 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 192W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 54nC Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20NM60FD | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 305 Stücke: Lieferzeit 7-14 Tag (e) |
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STP20NM60FP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; 192W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 192W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 215 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP21N90K5 | STMicroelectronics |
STP21N90K5 THT N channel transistors |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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STP22NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 44nC Pulsed drain current: 64A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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STP240N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Pulsed drain current: 440A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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STP24N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ || Plus Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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STP24NF10 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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STP24NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 68A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP25N80K5 | STMicroelectronics |
STP25N80K5 THT N channel transistors |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STP26NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 145 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP270N8F7 | STMicroelectronics |
STP270N8F7 THT N channel transistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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STP28N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 84A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.16Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STP28N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 14A; 170W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP2N80K5 | STMicroelectronics |
STP2N80K5 THT N channel transistors |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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STP2NK100Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 16nC Pulsed drain current: 7.4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 196 Stücke: Lieferzeit 7-14 Tag (e) |
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STP2NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.3A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 6.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP30NF10 | STMicroelectronics |
STP30NF10 THT N channel transistors |
auf Bestellung 199 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP30NF20 | STMicroelectronics |
STP30NF20 THT N channel transistors |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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STP310N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 315W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: DeepGATE™; STripFET™ VII Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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STP315N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 720A Power dissipation: 315W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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STP33N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.5A Pulsed drain current: 96A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STP33N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 104A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 45.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP12NK30Z |
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Hersteller: STMicroelectronics
STP12NK30Z THT N channel transistors
STP12NK30Z THT N channel transistors
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 77+ | 0.93 EUR |
| 82+ | 0.87 EUR |
| STP12NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.35 EUR |
| 25+ | 2.89 EUR |
| 27+ | 2.66 EUR |
| 50+ | 2.5 EUR |
| 100+ | 2.35 EUR |
| 250+ | 2.14 EUR |
| 500+ | 1.99 EUR |
| STP12NM50 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.76 EUR |
| 24+ | 3.03 EUR |
| 25+ | 2.87 EUR |
| 50+ | 2.75 EUR |
| 100+ | 2.63 EUR |
| 250+ | 2.47 EUR |
| 300+ | 2.46 EUR |
| STP12NM50FP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 7.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 7.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 10+ | 7.15 EUR |
| 50+ | 2 EUR |
| STP130N6F7 |
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Hersteller: STMicroelectronics
STP130N6F7 THT N channel transistors
STP130N6F7 THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 50+ | 1.43 EUR |
| 500+ | 1.07 EUR |
| STP13N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 67+ | 1.08 EUR |
| 75+ | 0.96 EUR |
| 100+ | 0.91 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.78 EUR |
| STP13NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 40+ | 1.83 EUR |
| 41+ | 1.76 EUR |
| STP13NK60ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.57 EUR |
| 32+ | 2.25 EUR |
| 50+ | 2.03 EUR |
| 100+ | 1.79 EUR |
| 250+ | 1.76 EUR |
| STP13NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 6.93A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 6.93A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.48 EUR |
| 27+ | 2.65 EUR |
| 50+ | 2.27 EUR |
| 100+ | 2.17 EUR |
| 250+ | 2.04 EUR |
| 500+ | 1.97 EUR |
| STP140N6F7 |
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Hersteller: STMicroelectronics
STP140N6F7 THT N channel transistors
STP140N6F7 THT N channel transistors
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.57 EUR |
| 35+ | 2.04 EUR |
| STP140NF55 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Gate charge: 142nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Gate charge: 142nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.27 EUR |
| 36+ | 2.03 EUR |
| 50+ | 1.72 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.33 EUR |
| STP140NF75 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ III; unipolar; 75V; 100A; 310W
Type of transistor: N-MOSFET
Technology: STripFET™ III
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ III; unipolar; 75V; 100A; 310W
Type of transistor: N-MOSFET
Technology: STripFET™ III
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.13 EUR |
| 20+ | 3.62 EUR |
| 25+ | 3 EUR |
| 50+ | 2.46 EUR |
| 100+ | 2.04 EUR |
| 1000+ | 1.92 EUR |
| STP14NK50Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 150W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 150W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.16 EUR |
| 50+ | 2.04 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.67 EUR |
| STP14NK50ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| 50+ | 2.16 EUR |
| 1000+ | 2 EUR |
| STP14NK60ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.25 EUR |
| 25+ | 2.97 EUR |
| 29+ | 2.53 EUR |
| 50+ | 2.32 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.99 EUR |
| STP150N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 440A
Gate charge: 117nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 440A
Gate charge: 117nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 29+ | 2.47 EUR |
| STP15N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 30nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 30nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.73 EUR |
| 20+ | 3.73 EUR |
| 50+ | 3.25 EUR |
| 100+ | 3.02 EUR |
| 250+ | 2.76 EUR |
| 500+ | 2.65 EUR |
| STP15NK50Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.46 EUR |
| 34+ | 2.13 EUR |
| 36+ | 1.99 EUR |
| 50+ | 1.9 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.72 EUR |
| STP160N3LL |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 112A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 112A
Power dissipation: 136W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 480A
Technology: STripFET™ H6
Gate charge: 42nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 112A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 112A
Power dissipation: 136W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 480A
Technology: STripFET™ H6
Gate charge: 42nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 937 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 67+ | 1.07 EUR |
| STP16CP05MTR | ![]() |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 665 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 46+ | 1.56 EUR |
| 50+ | 1.44 EUR |
| STP16CP05TTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; TSSOP24; 5÷100mA; 1.3÷20V; Ch: 16; 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; TSSOP24; 5÷100mA; 1.3÷20V; Ch: 16; 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Integrated circuit features: shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1086 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 44+ | 1.66 EUR |
| 49+ | 1.49 EUR |
| 55+ | 1.32 EUR |
| 56+ | 1.29 EUR |
| STP16CPC26PTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; QSOP24; 5÷90mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: QSOP24
Output current: 5...90mA
Output voltage: 1.3...20V
Number of channels: 16
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Integrated circuit features: shift register
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; QSOP24; 5÷90mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: QSOP24
Output current: 5...90mA
Output voltage: 1.3...20V
Number of channels: 16
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Integrated circuit features: shift register
Anzahl je Verpackung: 1 Stücke
auf Bestellung 93 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 72+ | 1 EUR |
| 80+ | 0.9 EUR |
| 91+ | 0.79 EUR |
| 100+ | 0.76 EUR |
| STP16CPC26XTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; TSSOP24; 5÷90mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP24
Output current: 5...90mA
Output voltage: 1.3...20V
Number of channels: 16
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; TSSOP24; 5÷90mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSSOP24
Output current: 5...90mA
Output voltage: 1.3...20V
Number of channels: 16
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 722 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 76+ | 0.94 EUR |
| 85+ | 0.84 EUR |
| 90+ | 0.8 EUR |
| STP16NF06 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1441 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| 86+ | 0.83 EUR |
| 94+ | 0.77 EUR |
| 100+ | 0.72 EUR |
| 106+ | 0.68 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.59 EUR |
| STP17N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ K5
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ K5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.52 EUR |
| 15+ | 4.98 EUR |
| 25+ | 4.39 EUR |
| 100+ | 3.95 EUR |
| 500+ | 3.73 EUR |
| STP17NK40ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.49 EUR |
| 20+ | 3.65 EUR |
| 50+ | 3.06 EUR |
| 100+ | 2.86 EUR |
| 250+ | 2.63 EUR |
| 500+ | 2.47 EUR |
| 750+ | 2.42 EUR |
| STP18N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 8A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.47 EUR |
| 39+ | 1.86 EUR |
| 46+ | 1.56 EUR |
| STP18NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 52A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 52A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.89 EUR |
| 46+ | 1.56 EUR |
| 50+ | 1.54 EUR |
| 100+ | 1.49 EUR |
| 250+ | 1.4 EUR |
| 500+ | 1.34 EUR |
| STP18NM80 |
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Hersteller: STMicroelectronics
STP18NM80 THT N channel transistors
STP18NM80 THT N channel transistors
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.95 EUR |
| 21+ | 3.56 EUR |
| 22+ | 3.36 EUR |
| STP19NF20 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| STP19NM50N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 10A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 10A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 401 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.95 EUR |
| 29+ | 2.47 EUR |
| 32+ | 2.27 EUR |
| 50+ | 2.13 EUR |
| 100+ | 1.99 EUR |
| 150+ | 1.92 EUR |
| 250+ | 1.83 EUR |
| STP200N3LL |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 176.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 176.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.11 EUR |
| STP20N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 11.3A; 130W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.3A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 11.3A; 130W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.3A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 10+ | 7.15 EUR |
| STP20N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; Idm: 70A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 70A
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 11A; Idm: 70A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 70A
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.42 EUR |
| STP20NF20 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 11A; 110W; TO220-3
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 11A; 110W; TO220-3
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 158 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.29 EUR |
| 47+ | 1.54 EUR |
| STP20NM50 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.73 EUR |
| 50+ | 2.86 EUR |
| STP20NM50FD |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 53nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 53nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 50+ | 2.99 EUR |
| STP20NM60 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 54nC
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 54nC
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.17 EUR |
| 29+ | 2.49 EUR |
| 50+ | 2.39 EUR |
| 100+ | 2.16 EUR |
| 250+ | 2.06 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.76 EUR |
| STP20NM60FD |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 305 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 17+ | 4.32 EUR |
| 50+ | 3.83 EUR |
| 100+ | 3.65 EUR |
| 500+ | 3.22 EUR |
| 1000+ | 3.03 EUR |
| 1250+ | 2.99 EUR |
| STP20NM60FP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 192W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 192W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 192W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 192W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 215 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.46 EUR |
| 19+ | 3.9 EUR |
| 25+ | 3.35 EUR |
| 50+ | 2.86 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.33 EUR |
| STP21N90K5 |
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Hersteller: STMicroelectronics
STP21N90K5 THT N channel transistors
STP21N90K5 THT N channel transistors
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.31 EUR |
| 12+ | 6.03 EUR |
| STP22NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 64A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 64A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.5 EUR |
| 36+ | 1.99 EUR |
| 50+ | 1.8 EUR |
| 100+ | 1.62 EUR |
| STP240N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.11 EUR |
| STP24N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ || Plus
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ || Plus
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.47 EUR |
| 24+ | 3.09 EUR |
| 30+ | 2.43 EUR |
| 50+ | 2.23 EUR |
| STP24NF10 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 50+ | 1.43 EUR |
| STP24NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.56 EUR |
| 27+ | 2.75 EUR |
| 31+ | 2.36 EUR |
| 37+ | 1.94 EUR |
| 50+ | 1.76 EUR |
| STP25N80K5 |
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Hersteller: STMicroelectronics
STP25N80K5 THT N channel transistors
STP25N80K5 THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 21+ | 3.5 EUR |
| 22+ | 3.32 EUR |
| STP26NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.63 EUR |
| 15+ | 5 EUR |
| 25+ | 4.55 EUR |
| 50+ | 4.2 EUR |
| 100+ | 3.9 EUR |
| 250+ | 3.62 EUR |
| 500+ | 3.47 EUR |
| STP270N8F7 |
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Hersteller: STMicroelectronics
STP270N8F7 THT N channel transistors
STP270N8F7 THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.08 EUR |
| 14+ | 5.31 EUR |
| 15+ | 5.02 EUR |
| STP28N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.66 EUR |
| 25+ | 2.92 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.3 EUR |
| STP28N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.4 EUR |
| STP2N80K5 |
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Hersteller: STMicroelectronics
STP2N80K5 THT N channel transistors
STP2N80K5 THT N channel transistors
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 99+ | 0.73 EUR |
| 103+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| STP2NK100Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16nC
Pulsed drain current: 7.4A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16nC
Pulsed drain current: 7.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 196 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 111+ | 0.64 EUR |
| 500+ | 0.61 EUR |
| 2000+ | 0.6 EUR |
| STP2NK90Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.33 EUR |
| 48+ | 1.52 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.22 EUR |
| 200+ | 1.14 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.94 EUR |
| STP30NF10 |
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Hersteller: STMicroelectronics
STP30NF10 THT N channel transistors
STP30NF10 THT N channel transistors
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 103+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| STP30NF20 |
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Hersteller: STMicroelectronics
STP30NF20 THT N channel transistors
STP30NF20 THT N channel transistors
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.29 EUR |
| 50+ | 1.44 EUR |
| 51+ | 1.4 EUR |
| 500+ | 1.32 EUR |
| STP310N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: DeepGATE™; STripFET™ VII
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: DeepGATE™; STripFET™ VII
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.86 EUR |
| 16+ | 4.66 EUR |
| STP315N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.56 EUR |
| 18+ | 4.12 EUR |
| 50+ | 3.63 EUR |
| 100+ | 3.27 EUR |
| 500+ | 3.12 EUR |
| STP33N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.08 EUR |
| 27+ | 2.73 EUR |
| STP33N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 25+ | 2.87 EUR |
| 50+ | 2.62 EUR |



























