Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (166387) > Seite 1145 nach 2774
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STP24N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ || Plus Anzahl je Verpackung: 1 Stücke |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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STP24NF10 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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STP24NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 44nC Pulsed drain current: 68A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP25N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 12.3A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 12.3A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 78A Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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STP26NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 154 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP270N8F7 | STMicroelectronics |
STP270N8F7 THT N channel transistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP28N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 84A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.16Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STP28N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 14A; 170W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP2N80K5 | STMicroelectronics |
STP2N80K5 THT N channel transistors |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP2NK100Z | STMicroelectronics |
STP2NK100Z THT N channel transistors |
auf Bestellung 196 Stücke: Lieferzeit 7-14 Tag (e) |
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STP2NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.3A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 6.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP30NF10 | STMicroelectronics |
STP30NF10 THT N channel transistors |
auf Bestellung 199 Stücke: Lieferzeit 7-14 Tag (e) |
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STP30NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 66 Stücke: Lieferzeit 7-14 Tag (e) |
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STP310N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 315W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: DeepGATE™; STripFET™ VII Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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STP315N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 720A Power dissipation: 315W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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STP33N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.5A Pulsed drain current: 96A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STP33N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 104A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 45.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STP34NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.105Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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STP36NF06L | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±18V On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 238 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 9Ω Drain current: 1.6A Gate-source voltage: ±30V Power dissipation: 140W Drain-source voltage: 1.5kV Kind of channel: enhancement Technology: PowerMesh™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 117 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 196 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STP3NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 90W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.89A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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STP3NK90ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 203 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40NF10 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ II Drain-source voltage: 100V Drain current: 35A On-state resistance: 28mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 125 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40NF10L | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Gate-source voltage: ±17V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 84 Stücke: Lieferzeit 7-14 Tag (e) |
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STP40NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ Drain-source voltage: 200V Drain current: 25A On-state resistance: 45mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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STP42N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ V Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N60DM2AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N60DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 95A Power dissipation: 210W Case: TO220-3 On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±25V Version: ESD Drain current: 22A Power dissipation: 210W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP45NF06 | STMicroelectronics |
STP45NF06 THT N channel transistors |
auf Bestellung 189 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP46NF30 | STMicroelectronics |
STP46NF30 THT N channel transistors |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3 Mounting: THT Case: TO220-3 Kind of package: tube On-state resistance: 7Ω Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 160W Gate-source voltage: ±30V Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 116 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; TO220-3; ESD Version: ESD Kind of package: tube Technology: SuperMesh™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A On-state resistance: 3.5Ω Power dissipation: 80W Gate-source voltage: ±30V Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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STP4NK80ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 177 Stücke: Lieferzeit 7-14 Tag (e) |
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STP50N60DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 137A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP50NF25 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 28A Pulsed drain current: 180A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: THT Gate charge: 68.2nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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STP55NF06 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 308 Stücke: Lieferzeit 7-14 Tag (e) |
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STP55NF06FP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 133 Stücke: Lieferzeit 7-14 Tag (e) |
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STP55NF06L | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 95W Case: TO220-3 Gate-source voltage: ±16V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 228 Stücke: Lieferzeit 7-14 Tag (e) |
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STP57N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Pulsed drain current: 168A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 16A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.75Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 5nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP5NK100Z | STMicroelectronics |
STP5NK100Z THT N channel transistors |
auf Bestellung 217 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK50ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 134 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK52ZD | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 520V; 2.7A; Idm: 17.6A; 70W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 520V Drain current: 2.7A Pulsed drain current: 17.6A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 16.9nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 238 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.16A Pulsed drain current: 20A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 175 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD Mounting: THT Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Power dissipation: 110W Drain current: 2.7A On-state resistance: 2.4Ω Gate-source voltage: ±30V Drain-source voltage: 800V Case: TO220-3 Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 179 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK80ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD Mounting: THT Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Power dissipation: 30W Drain current: 2.7A On-state resistance: 2.4Ω Gate-source voltage: ±30V Drain-source voltage: 800V Case: TO220FP Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 449 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06L | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±15V On-state resistance: 14mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 545 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF10 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 590 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP6N95K5 | STMicroelectronics |
STP6N95K5 THT N channel transistors |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.8A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 265 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.8A Power dissipation: 110W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 194 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.65A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP24N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ || Plus
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ || Plus
Anzahl je Verpackung: 1 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.47 EUR |
| 24+ | 3.09 EUR |
| 30+ | 2.43 EUR |
| 50+ | 2.23 EUR |
| STP24NF10 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 50+ | 1.43 EUR |
| STP24NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.56 EUR |
| 27+ | 2.75 EUR |
| 31+ | 2.36 EUR |
| 37+ | 1.94 EUR |
| 50+ | 1.76 EUR |
| STP25N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 12.3A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12.3A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 78A
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 12.3A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12.3A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 78A
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP26NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.63 EUR |
| 15+ | 5 EUR |
| 25+ | 4.55 EUR |
| 50+ | 4.2 EUR |
| 100+ | 3.9 EUR |
| 250+ | 3.62 EUR |
| 500+ | 3.47 EUR |
| STP270N8F7 |
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Hersteller: STMicroelectronics
STP270N8F7 THT N channel transistors
STP270N8F7 THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.08 EUR |
| 14+ | 5.31 EUR |
| 15+ | 5.02 EUR |
| STP28N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.66 EUR |
| 25+ | 2.92 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.27 EUR |
| STP28N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.17 EUR |
| 26+ | 2.76 EUR |
| STP2N80K5 |
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Hersteller: STMicroelectronics
STP2N80K5 THT N channel transistors
STP2N80K5 THT N channel transistors
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 99+ | 0.73 EUR |
| 103+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| STP2NK100Z |
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Hersteller: STMicroelectronics
STP2NK100Z THT N channel transistors
STP2NK100Z THT N channel transistors
auf Bestellung 196 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 120+ | 0.6 EUR |
| 127+ | 0.56 EUR |
| STP2NK90Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.33 EUR |
| 48+ | 1.52 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.22 EUR |
| 200+ | 1.14 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.94 EUR |
| STP30NF10 |
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Hersteller: STMicroelectronics
STP30NF10 THT N channel transistors
STP30NF10 THT N channel transistors
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 103+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| STP30NF20 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 31+ | 2.37 EUR |
| 35+ | 2.09 EUR |
| 50+ | 1.43 EUR |
| 53+ | 1.36 EUR |
| 250+ | 1.3 EUR |
| STP310N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: DeepGATE™; STripFET™ VII
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: DeepGATE™; STripFET™ VII
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.86 EUR |
| 16+ | 4.66 EUR |
| STP315N10F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.56 EUR |
| 18+ | 4.12 EUR |
| 50+ | 3.63 EUR |
| 100+ | 3.27 EUR |
| 500+ | 3.12 EUR |
| STP33N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.08 EUR |
| 27+ | 2.72 EUR |
| STP33N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 25+ | 2.87 EUR |
| 50+ | 2.62 EUR |
| STP34NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.97 EUR |
| 50+ | 5.92 EUR |
| 500+ | 5.26 EUR |
| STP36NF06L | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 53+ | 1.36 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| 100+ | 0.9 EUR |
| STP3N150 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 9Ω
Drain current: 1.6A
Gate-source voltage: ±30V
Power dissipation: 140W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: PowerMesh™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 9Ω
Drain current: 1.6A
Gate-source voltage: ±30V
Power dissipation: 140W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: PowerMesh™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.09 EUR |
| 18+ | 4.2 EUR |
| STP3NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 196 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 133+ | 0.54 EUR |
| 141+ | 0.51 EUR |
| STP3NK60ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STP3NK90Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 90W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 90W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 41+ | 1.76 EUR |
| 49+ | 1.49 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.16 EUR |
| 200+ | 1.06 EUR |
| 250+ | 1.02 EUR |
| STP3NK90ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 203 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 81+ | 0.89 EUR |
| 85+ | 0.85 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.67 EUR |
| 500+ | 0.64 EUR |
| STP40NF10 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 35A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ II
Drain-source voltage: 100V
Drain current: 35A
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.2 EUR |
| 43+ | 1.67 EUR |
| 49+ | 1.46 EUR |
| 67+ | 1.07 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.75 EUR |
| STP40NF10L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Gate-source voltage: ±17V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Gate-source voltage: ±17V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 45+ | 1.62 EUR |
| 57+ | 1.27 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.9 EUR |
| 1250+ | 0.89 EUR |
| STP40NF20 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.25 EUR |
| 21+ | 3.56 EUR |
| 25+ | 2.92 EUR |
| STP42N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.3 EUR |
| STP45N60DM2AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.69 EUR |
| 15+ | 5.11 EUR |
| 50+ | 4.52 EUR |
| 100+ | 4.06 EUR |
| 500+ | 3.86 EUR |
| STP45N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.66 EUR |
| 13+ | 5.72 EUR |
| 25+ | 5.38 EUR |
| STP45N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±25V
Version: ESD
Drain current: 22A
Power dissipation: 210W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±25V
Version: ESD
Drain current: 22A
Power dissipation: 210W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.85 EUR |
| 10+ | 7.15 EUR |
| 11+ | 6.84 EUR |
| STP45NF06 |
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Hersteller: STMicroelectronics
STP45NF06 THT N channel transistors
STP45NF06 THT N channel transistors
auf Bestellung 189 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 83+ | 0.87 EUR |
| 152+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| STP46NF30 |
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Hersteller: STMicroelectronics
STP46NF30 THT N channel transistors
STP46NF30 THT N channel transistors
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.85 EUR |
| 32+ | 2.3 EUR |
| 33+ | 2.17 EUR |
| STP4N150 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
On-state resistance: 7Ω
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
On-state resistance: 7Ω
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.37 EUR |
| 10+ | 7.26 EUR |
| STP4NK60Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 50+ | 1.43 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.82 EUR |
| STP4NK60ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 43+ | 1.67 EUR |
| 52+ | 1.39 EUR |
| 65+ | 1.1 EUR |
| 75+ | 0.96 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.86 EUR |
| STP4NK80Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; TO220-3; ESD
Version: ESD
Kind of package: tube
Technology: SuperMesh™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
On-state resistance: 3.5Ω
Power dissipation: 80W
Gate-source voltage: ±30V
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; TO220-3; ESD
Version: ESD
Kind of package: tube
Technology: SuperMesh™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
On-state resistance: 3.5Ω
Power dissipation: 80W
Gate-source voltage: ±30V
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 10+ | 7.15 EUR |
| 21+ | 3.4 EUR |
| 56+ | 1.27 EUR |
| 2000+ | 0.76 EUR |
| STP4NK80ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.09 EUR |
| 38+ | 1.9 EUR |
| 40+ | 1.79 EUR |
| 45+ | 1.6 EUR |
| 79+ | 0.92 EUR |
| 84+ | 0.86 EUR |
| 250+ | 0.84 EUR |
| STP50N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 137A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 137A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 137A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.72 EUR |
| 18+ | 4.03 EUR |
| 50+ | 3.99 EUR |
| STP50NF25 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 68.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 68.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.85 EUR |
| 42+ | 1.72 EUR |
| 45+ | 1.62 EUR |
| 500+ | 1.56 EUR |
| STP55NF06 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 308 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 83+ | 0.87 EUR |
| 88+ | 0.82 EUR |
| 92+ | 0.78 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.69 EUR |
| 500+ | 0.65 EUR |
| STP55NF06FP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 30W; ESD
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.2 EUR |
| 55+ | 1.31 EUR |
| 61+ | 1.18 EUR |
| 66+ | 1.09 EUR |
| 100+ | 1.01 EUR |
| 250+ | 0.91 EUR |
| 500+ | 0.84 EUR |
| STP55NF06L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: TO220-3
Gate-source voltage: ±16V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 39A; 95W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: TO220-3
Gate-source voltage: ±16V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 78+ | 0.92 EUR |
| 82+ | 0.88 EUR |
| 85+ | 0.84 EUR |
| 100+ | 0.81 EUR |
| 200+ | 0.78 EUR |
| 500+ | 0.74 EUR |
| STP57N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M5
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 10.08 EUR |
| 9+ | 8.29 EUR |
| 10+ | 7.31 EUR |
| 50+ | 7.15 EUR |
| STP5N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 16A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 5nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 16A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.84 EUR |
| 47+ | 1.53 EUR |
| 50+ | 1.46 EUR |
| 51+ | 1.4 EUR |
| STP5NK100Z |
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Hersteller: STMicroelectronics
STP5NK100Z THT N channel transistors
STP5NK100Z THT N channel transistors
auf Bestellung 217 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.27 EUR |
| 70+ | 1.03 EUR |
| 74+ | 0.97 EUR |
| STP5NK50Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 33+ | 2.17 EUR |
| 68+ | 1.06 EUR |
| 2000+ | 0.63 EUR |
| 5000+ | 0.62 EUR |
| STP5NK50ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.46 EUR |
| 40+ | 1.82 EUR |
| 97+ | 0.74 EUR |
| 103+ | 0.7 EUR |
| STP5NK52ZD |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 520V; 2.7A; Idm: 17.6A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 520V
Drain current: 2.7A
Pulsed drain current: 17.6A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 16.9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 520V; 2.7A; Idm: 17.6A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 520V
Drain current: 2.7A
Pulsed drain current: 17.6A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 16.9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 117+ | 0.61 EUR |
| 122+ | 0.59 EUR |
| 2000+ | 0.57 EUR |
| STP5NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 82+ | 0.87 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| 1000+ | 0.62 EUR |
| STP5NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Power dissipation: 110W
Drain current: 2.7A
On-state resistance: 2.4Ω
Gate-source voltage: ±30V
Drain-source voltage: 800V
Case: TO220-3
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Power dissipation: 110W
Drain current: 2.7A
On-state resistance: 2.4Ω
Gate-source voltage: ±30V
Drain-source voltage: 800V
Case: TO220-3
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 179 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 38+ | 1.93 EUR |
| 44+ | 1.64 EUR |
| 47+ | 1.53 EUR |
| 50+ | 1.49 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.12 EUR |
| STP5NK80ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD
Mounting: THT
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Power dissipation: 30W
Drain current: 2.7A
On-state resistance: 2.4Ω
Gate-source voltage: ±30V
Drain-source voltage: 800V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP; ESD
Mounting: THT
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Power dissipation: 30W
Drain current: 2.7A
On-state resistance: 2.4Ω
Gate-source voltage: ±30V
Drain-source voltage: 800V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 449 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 47+ | 1.53 EUR |
| 50+ | 1.44 EUR |
| 52+ | 1.39 EUR |
| 100+ | 1.33 EUR |
| 300+ | 1.23 EUR |
| 500+ | 1.2 EUR |
| STP60NF06 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 60+ | 1.2 EUR |
| 73+ | 0.99 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.72 EUR |
| 1250+ | 0.7 EUR |
| STP60NF06L |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 545 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| 39+ | 1.87 EUR |
| 44+ | 1.66 EUR |
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.92 EUR |
| STP60NF10 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 590 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.17 EUR |
| 25+ | 2.89 EUR |
| 28+ | 2.57 EUR |
| 52+ | 1.39 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.92 EUR |
| STP6N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.74 EUR |
| 48+ | 1.5 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.07 EUR |
| 250+ | 1.04 EUR |
| STP6N95K5 |
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Hersteller: STMicroelectronics
STP6N95K5 THT N channel transistors
STP6N95K5 THT N channel transistors
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| 39+ | 1.87 EUR |
| 41+ | 1.77 EUR |
| STP6NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 48+ | 1.5 EUR |
| 57+ | 1.26 EUR |
| 68+ | 1.06 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.89 EUR |
| STP6NK60ZFP | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.8A
Power dissipation: 110W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 194 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 61+ | 1.17 EUR |
| 68+ | 1.06 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.96 EUR |
| 2000+ | 0.92 EUR |
| STP6NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.65A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.75 EUR |
| 21+ | 3.5 EUR |
| 29+ | 2.5 EUR |
| 38+ | 1.93 EUR |
| 50+ | 1.6 EUR |
| 100+ | 1.37 EUR |
| 250+ | 1.3 EUR |















