Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (171182) > Seite 1146 nach 2854
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P6KE30CA | STMicroelectronics |
![]() Description: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 345 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE33CA | STMicroelectronics |
![]() Description: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Kind of package: Ammo Pack Tolerance: ±5% Leakage current: 0.5µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8750 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE36A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 31V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1243 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE36CA | STMicroelectronics |
![]() Description: Diode: TVS; 36V; 12A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 31V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 448 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE39A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 938 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE39CA | STMicroelectronics |
![]() Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6KE400A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 400V; 1.1A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 1.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6KE400CA | STMicroelectronics |
![]() Description: Diode: TVS; 400V; 1.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 1.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 457 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE440A | STMicroelectronics |
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auf Bestellung 1526 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE440CA | STMicroelectronics |
![]() Description: Diode: TVS; 440V; 1A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 376V Breakdown voltage: 440V Max. forward impulse current: 1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 869 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE47CA | STMicroelectronics |
![]() Description: Diode: TVS; 47V; 9.3A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 40V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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P6KE6V8A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Breakdown voltage: 6.8V Semiconductor structure: unidirectional Mounting: THT Case: DO15 Max. off-state voltage: 5.8V Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. forward impulse current: 57A Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1172 Stücke: Lieferzeit 7-14 Tag (e) |
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P6KE6V8CA | STMicroelectronics |
![]() Description: Diode: TVS; 6.8V; 57A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 20µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3687 Stücke: Lieferzeit 7-14 Tag (e) |
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PB137ACV | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PD54008L-E | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 25V; 5A; 26.7W; PowerFLAT; SMT Case: PowerFLAT Electrical mounting: SMT Kind of package: reel; tape Frequency: 500MHz Drain-source voltage: 25V Drain current: 5A Type of transistor: N-MOSFET Open-loop gain: 15dB Output power: 8W Power dissipation: 26.7W Efficiency: 50% Polarisation: unipolar Kind of transistor: RF Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PD55003-E | STMicroelectronics |
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auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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PD55015-E | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 40V; 5A; 73W; PowerSO10RF; SMT Frequency: 500MHz Drain-source voltage: 40V Drain current: 5A Type of transistor: N-MOSFET Open-loop gain: 14dB Output power: 15W Power dissipation: 73W Efficiency: 55% Polarisation: unipolar Kind of package: tube Electrical mounting: SMT Kind of transistor: RF Kind of channel: enhancement Gate-source voltage: ±20V Case: PowerSO10RF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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PD55015S-E | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PD55025S-E | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PD57018-E | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 65V; 2.5A; 31.7W; PowerSO10RF Drain-source voltage: 65V Drain current: 2.5A Type of transistor: N-MOSFET Open-loop gain: 16.5dB Output power: 18W Power dissipation: 31.7W Polarisation: unipolar Kind of package: tube Electrical mounting: SMT Kind of transistor: RF Kind of channel: enhancement Gate-source voltage: ±20V Case: PowerSO10RF Frequency: 945MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
PD57030S-E | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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PD57060-E | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT Case: PowerSO10RF Frequency: 945MHz Drain-source voltage: 65V Drain current: 7A Type of transistor: N-MOSFET Open-loop gain: 14.3dB Output power: 60W Power dissipation: 79W Efficiency: 54% Polarisation: unipolar Kind of package: tube Electrical mounting: SMT Kind of transistor: RF Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PKC-136 | STMicroelectronics |
![]() Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V Max. off-state voltage: 700V Breakdown voltage: 160V Leakage current: 10µA Kind of package: Ammo Pack Type of diode: TVS+FRD Features of semiconductor devices: snubber diode; ultrafast switching Mounting: THT Case: DO15 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 451 Stücke: Lieferzeit 7-14 Tag (e) |
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PM8841D | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
POWERSTEP01 | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RBO08-40G | STMicroelectronics |
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auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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RBO40-40G | STMicroelectronics |
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auf Bestellung 576 Stücke: Lieferzeit 7-14 Tag (e) |
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RBO40-40G-TR | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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S2-LPQTR | STMicroelectronics |
![]() Description: IC: RF transceiver; SPI,UART; QFN24; -40÷85°C; 1.8÷3.6VDC; 1GHz Type of integrated circuit: RF transceiver Case: QFN24 Operating temperature: -40...85°C Interface: SPI; UART Transfer rate: 500kbps Kind of modulation: ASK; OOK Communictions protocol: M-Bus; SigFox Receiver sensitivity: -130dBm Transmitter output power: 10dBm Kind of module: RF Band: 1GHz Supply voltage: 1.8...3.6V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SCT012H90G3AG | STMicroelectronics | SCT012H90G3AG SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT015W120G3-4AG | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT018H65G3AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 55A; Idm: 312A; 385W; H2PAK7 Mounting: SMD Drain-source voltage: 650V Drain current: 55A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 385W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.4nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 312A Case: H2PAK7 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT018W65G3-4AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 55A; Idm: 323A; 398W; HIP247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 55A Pulsed drain current: 323A Power dissipation: 398W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 27mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhancement Version: Automotive Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT025W120G3-4AG | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT027W65G3-4AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 264A; 313W; HIP247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 264A Power dissipation: 313W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 39.3mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Version: Automotive Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT040H120G3AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 156A; 300W; H2PAK7 Polarisation: unipolar Mounting: SMD Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 300W Kind of package: reel; tape Version: Automotive Gate charge: 54nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 156A Case: H2PAK7 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT040H65G3AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; H2PAK7 Polarisation: unipolar Mounting: SMD Drain-source voltage: 650V Drain current: 30A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 221W Kind of package: reel; tape Gate charge: 39.5nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 160A Case: H2PAK7 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT040HU65G3AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; HU3PAK Polarisation: unipolar Mounting: SMD Drain-source voltage: 650V Drain current: 30A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 221W Kind of package: reel; tape Gate charge: 39.5nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 160A Case: HU3PAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT040W120G3-4AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W Polarisation: unipolar Mounting: THT Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 312W Kind of package: tube Version: Automotive Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 179A Case: HIP247-4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT040W120G3AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W; HIP247™ Polarisation: unipolar Mounting: THT Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 312W Kind of package: tube Version: Automotive Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 179A Case: HIP247™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT055HU65G3AG | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT060HU75G3AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 750V; 30A; Idm: 132A; 185W; HU3PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 750V Drain current: 30A Pulsed drain current: 132A Power dissipation: 185W Case: HU3PAK Gate-source voltage: -10...22V On-state resistance: 78mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT070H120G3AG | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT070HU120G3AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; HU3PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 100A Power dissipation: 223W Case: HU3PAK Gate-source voltage: -10...22V On-state resistance: 87mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT070W120G3-4AG | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT1000N170 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.7kV; 7A; Idm: 20A; 96W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 7A Pulsed drain current: 20A Power dissipation: 96W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 1.3Ω Mounting: THT Gate charge: 13.3nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT10N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 24A; 150W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 24A Power dissipation: 150W Case: HIP247™ Gate-source voltage: -10...25V On-state resistance: 690mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SCT10N120AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 24A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 24A Power dissipation: 150W Case: HIP247™ On-state resistance: 0.58Ω Mounting: THT Gate charge: 22nC Kind of package: tube Technology: SiC Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SCT10N120H | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SCT20N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W Type of transistor: N-MOSFET Technology: SiC; SiCFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 45A Power dissipation: 175W Case: HIP247™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 45nC Kind of package: tube Gate-source voltage: -10...25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SCT20N120AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 153W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 45A Power dissipation: 153W Case: HIP247™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 45nC Kind of package: tube Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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SCT20N120H | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; Idm: 45A; 150W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Pulsed drain current: 45A Power dissipation: 150W Case: H2PAK-2 On-state resistance: 239mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: -10...25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SCT30N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 34A Pulsed drain current: 90A Power dissipation: 270W Case: HIP247™ Gate-source voltage: -10...25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 105nC Kind of package: tube Technology: SiC; SiCFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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SCT30N120H | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 42A; Idm: 90A; 230W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 90A Power dissipation: 230W Case: H2PAK-2 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: -10...25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT50N120 | STMicroelectronics |
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auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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SCTH100N65G2-7AG | STMicroelectronics |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCTH35N65G2V-7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 208W; H2PAK7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: H2PAK7 On-state resistance: 67mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 73nC Gate-source voltage: -10...22V Pulsed drain current: 90A Drain current: 45A Power dissipation: 208W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCTH35N65G2V-7AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 208W; H2PAK7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: H2PAK7 On-state resistance: 67mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 73nC Gate-source voltage: -10...22V Pulsed drain current: 90A Drain current: 45A Power dissipation: 208W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCTH40N120G2V-7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 100A; 238W; H2PAK7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 100A Power dissipation: 238W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCTH40N120G2V7AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 33A; Idm: 92A; 250W; H2PAK7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 33A Pulsed drain current: 92A Power dissipation: 250W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
P6KE30CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 345 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
211+ | 0.34 EUR |
302+ | 0.24 EUR |
345+ | 0.2 EUR |
1000+ | 0.15 EUR |
P6KE33CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Tolerance: ±5%
Leakage current: 0.5µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 33V; 13.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Tolerance: ±5%
Leakage current: 0.5µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8750 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
156+ | 0.46 EUR |
244+ | 0.29 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
P6KE36A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 31V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 31V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1243 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
172+ | 0.42 EUR |
206+ | 0.35 EUR |
224+ | 0.32 EUR |
428+ | 0.17 EUR |
451+ | 0.16 EUR |
P6KE36CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 12A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 31V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 12A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 31V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 448 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
177+ | 0.41 EUR |
417+ | 0.17 EUR |
439+ | 0.16 EUR |
P6KE39A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 938 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
161+ | 0.45 EUR |
184+ | 0.39 EUR |
257+ | 0.28 EUR |
451+ | 0.16 EUR |
477+ | 0.15 EUR |
P6KE39CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6KE400A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 400V; 1.1A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 400V; 1.1A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6KE400CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 1.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 1.1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 457 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
100+ | 0.72 EUR |
115+ | 0.62 EUR |
266+ | 0.27 EUR |
281+ | 0.25 EUR |
P6KE440A |
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Hersteller: STMicroelectronics
P6KE440A-ST Unidirectional TVS THT diodes
P6KE440A-ST Unidirectional TVS THT diodes
auf Bestellung 1526 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
83+ | 0.87 EUR |
295+ | 0.24 EUR |
311+ | 0.23 EUR |
P6KE440CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 1A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 869 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
106+ | 0.68 EUR |
121+ | 0.59 EUR |
296+ | 0.24 EUR |
313+ | 0.23 EUR |
10000+ | 0.22 EUR |
P6KE47CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47V; 9.3A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 40V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47V; 9.3A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 40V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6KE6V8A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Mounting: THT
Case: DO15
Max. off-state voltage: 5.8V
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 57A
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Mounting: THT
Case: DO15
Max. off-state voltage: 5.8V
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. forward impulse current: 57A
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1172 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
161+ | 0.44 EUR |
223+ | 0.32 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
P6KE6V8CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 57A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 20µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 57A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 20µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3687 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
136+ | 0.53 EUR |
169+ | 0.42 EUR |
186+ | 0.39 EUR |
468+ | 0.15 EUR |
496+ | 0.14 EUR |
PB137ACV |
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Hersteller: STMicroelectronics
PB137ACV Unregulated voltage regulators
PB137ACV Unregulated voltage regulators
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PD54008L-E |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 25V; 5A; 26.7W; PowerFLAT; SMT
Case: PowerFLAT
Electrical mounting: SMT
Kind of package: reel; tape
Frequency: 500MHz
Drain-source voltage: 25V
Drain current: 5A
Type of transistor: N-MOSFET
Open-loop gain: 15dB
Output power: 8W
Power dissipation: 26.7W
Efficiency: 50%
Polarisation: unipolar
Kind of transistor: RF
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 25V; 5A; 26.7W; PowerFLAT; SMT
Case: PowerFLAT
Electrical mounting: SMT
Kind of package: reel; tape
Frequency: 500MHz
Drain-source voltage: 25V
Drain current: 5A
Type of transistor: N-MOSFET
Open-loop gain: 15dB
Output power: 8W
Power dissipation: 26.7W
Efficiency: 50%
Polarisation: unipolar
Kind of transistor: RF
Kind of channel: enhancement
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PD55003-E |
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Hersteller: STMicroelectronics
PD55003-E SMD N channel transistors
PD55003-E SMD N channel transistors
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 17.45 EUR |
7+ | 10.78 EUR |
PD55015-E |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 40V; 5A; 73W; PowerSO10RF; SMT
Frequency: 500MHz
Drain-source voltage: 40V
Drain current: 5A
Type of transistor: N-MOSFET
Open-loop gain: 14dB
Output power: 15W
Power dissipation: 73W
Efficiency: 55%
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerSO10RF
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 40V; 5A; 73W; PowerSO10RF; SMT
Frequency: 500MHz
Drain-source voltage: 40V
Drain current: 5A
Type of transistor: N-MOSFET
Open-loop gain: 14dB
Output power: 15W
Power dissipation: 73W
Efficiency: 55%
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerSO10RF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 25.77 EUR |
PD55015S-E |
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Hersteller: STMicroelectronics
PD55015S-E SMD N channel transistors
PD55015S-E SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PD55025S-E |
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Hersteller: STMicroelectronics
PD55025S-E SMD N channel transistors
PD55025S-E SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PD57018-E |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 2.5A; 31.7W; PowerSO10RF
Drain-source voltage: 65V
Drain current: 2.5A
Type of transistor: N-MOSFET
Open-loop gain: 16.5dB
Output power: 18W
Power dissipation: 31.7W
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerSO10RF
Frequency: 945MHz
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 2.5A; 31.7W; PowerSO10RF
Drain-source voltage: 65V
Drain current: 2.5A
Type of transistor: N-MOSFET
Open-loop gain: 16.5dB
Output power: 18W
Power dissipation: 31.7W
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerSO10RF
Frequency: 945MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PD57030S-E |
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Hersteller: STMicroelectronics
PD57030S-E SMD N channel transistors
PD57030S-E SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PD57060-E |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT
Case: PowerSO10RF
Frequency: 945MHz
Drain-source voltage: 65V
Drain current: 7A
Type of transistor: N-MOSFET
Open-loop gain: 14.3dB
Output power: 60W
Power dissipation: 79W
Efficiency: 54%
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT
Case: PowerSO10RF
Frequency: 945MHz
Drain-source voltage: 65V
Drain current: 7A
Type of transistor: N-MOSFET
Open-loop gain: 14.3dB
Output power: 60W
Power dissipation: 79W
Efficiency: 54%
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PKC-136 |
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Hersteller: STMicroelectronics
Category: Diodes - others
Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V
Max. off-state voltage: 700V
Breakdown voltage: 160V
Leakage current: 10µA
Kind of package: Ammo Pack
Type of diode: TVS+FRD
Features of semiconductor devices: snubber diode; ultrafast switching
Mounting: THT
Case: DO15
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V
Max. off-state voltage: 700V
Breakdown voltage: 160V
Leakage current: 10µA
Kind of package: Ammo Pack
Type of diode: TVS+FRD
Features of semiconductor devices: snubber diode; ultrafast switching
Mounting: THT
Case: DO15
Anzahl je Verpackung: 1 Stücke
auf Bestellung 451 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
79+ | 0.91 EUR |
122+ | 0.59 EUR |
129+ | 0.55 EUR |
500+ | 0.53 EUR |
PM8841D |
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Hersteller: STMicroelectronics
PM8841D MOSFET/IGBT drivers
PM8841D MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
POWERSTEP01 |
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Hersteller: STMicroelectronics
POWERSTEP01 Motor and PWM drivers
POWERSTEP01 Motor and PWM drivers
Produkt ist nicht verfügbar
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Stück im Wert von UAH
RBO08-40G |
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Hersteller: STMicroelectronics
RBO08-40G Protection diodes - arrays
RBO08-40G Protection diodes - arrays
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.8 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
RBO40-40G |
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Hersteller: STMicroelectronics
RBO40-40G Protection diodes - arrays
RBO40-40G Protection diodes - arrays
auf Bestellung 576 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.03 EUR |
27+ | 2.67 EUR |
29+ | 2.53 EUR |
500+ | 2.43 EUR |
RBO40-40G-TR |
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Hersteller: STMicroelectronics
RBO40-40G-TR Protection diodes - arrays
RBO40-40G-TR Protection diodes - arrays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S2-LPQTR |
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Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: RF transceiver; SPI,UART; QFN24; -40÷85°C; 1.8÷3.6VDC; 1GHz
Type of integrated circuit: RF transceiver
Case: QFN24
Operating temperature: -40...85°C
Interface: SPI; UART
Transfer rate: 500kbps
Kind of modulation: ASK; OOK
Communictions protocol: M-Bus; SigFox
Receiver sensitivity: -130dBm
Transmitter output power: 10dBm
Kind of module: RF
Band: 1GHz
Supply voltage: 1.8...3.6V DC
Anzahl je Verpackung: 1 Stücke
Category: Integrated circuits - others
Description: IC: RF transceiver; SPI,UART; QFN24; -40÷85°C; 1.8÷3.6VDC; 1GHz
Type of integrated circuit: RF transceiver
Case: QFN24
Operating temperature: -40...85°C
Interface: SPI; UART
Transfer rate: 500kbps
Kind of modulation: ASK; OOK
Communictions protocol: M-Bus; SigFox
Receiver sensitivity: -130dBm
Transmitter output power: 10dBm
Kind of module: RF
Band: 1GHz
Supply voltage: 1.8...3.6V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCT012H90G3AG |
Hersteller: STMicroelectronics
SCT012H90G3AG SMD N channel transistors
SCT012H90G3AG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT015W120G3-4AG |
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Hersteller: STMicroelectronics
SCT015W120G3-4AG THT N channel transistors
SCT015W120G3-4AG THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT018H65G3AG |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 55A; Idm: 312A; 385W; H2PAK7
Mounting: SMD
Drain-source voltage: 650V
Drain current: 55A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 385W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.4nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 312A
Case: H2PAK7
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 55A; Idm: 312A; 385W; H2PAK7
Mounting: SMD
Drain-source voltage: 650V
Drain current: 55A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 385W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.4nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 312A
Case: H2PAK7
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT018W65G3-4AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 55A; Idm: 323A; 398W; HIP247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 55A
Pulsed drain current: 323A
Power dissipation: 398W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 55A; Idm: 323A; 398W; HIP247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 55A
Pulsed drain current: 323A
Power dissipation: 398W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT025W120G3-4AG |
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Hersteller: STMicroelectronics
SCT025W120G3-4AG THT N channel transistors
SCT025W120G3-4AG THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT027W65G3-4AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 264A; 313W; HIP247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 264A
Power dissipation: 313W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 39.3mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 264A; 313W; HIP247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 264A
Power dissipation: 313W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 39.3mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT040H120G3AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 156A; 300W; H2PAK7
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Kind of package: reel; tape
Version: Automotive
Gate charge: 54nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 156A
Case: H2PAK7
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 156A; 300W; H2PAK7
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Kind of package: reel; tape
Version: Automotive
Gate charge: 54nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 156A
Case: H2PAK7
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT040H65G3AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; H2PAK7
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Kind of package: reel; tape
Gate charge: 39.5nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: H2PAK7
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; H2PAK7
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Kind of package: reel; tape
Gate charge: 39.5nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: H2PAK7
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT040HU65G3AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; HU3PAK
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Kind of package: reel; tape
Gate charge: 39.5nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: HU3PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 160A; 221W; HU3PAK
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Kind of package: reel; tape
Gate charge: 39.5nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: HU3PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT040W120G3-4AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W
Polarisation: unipolar
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Kind of package: tube
Version: Automotive
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 179A
Case: HIP247-4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W
Polarisation: unipolar
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Kind of package: tube
Version: Automotive
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 179A
Case: HIP247-4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT040W120G3AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W; HIP247™
Polarisation: unipolar
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Kind of package: tube
Version: Automotive
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 179A
Case: HIP247™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W; HIP247™
Polarisation: unipolar
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 40A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Kind of package: tube
Version: Automotive
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Pulsed drain current: 179A
Case: HIP247™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT055HU65G3AG |
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Hersteller: STMicroelectronics
SCT055HU65G3AG SMD N channel transistors
SCT055HU65G3AG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT060HU75G3AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 750V; 30A; Idm: 132A; 185W; HU3PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 750V
Drain current: 30A
Pulsed drain current: 132A
Power dissipation: 185W
Case: HU3PAK
Gate-source voltage: -10...22V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 750V; 30A; Idm: 132A; 185W; HU3PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 750V
Drain current: 30A
Pulsed drain current: 132A
Power dissipation: 185W
Case: HU3PAK
Gate-source voltage: -10...22V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT070H120G3AG |
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Hersteller: STMicroelectronics
SCT070H120G3AG SMD N channel transistors
SCT070H120G3AG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT070HU120G3AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; HU3PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: HU3PAK
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; HU3PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: HU3PAK
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT070W120G3-4AG |
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Hersteller: STMicroelectronics
SCT070W120G3-4AG THT N channel transistors
SCT070W120G3-4AG THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT1000N170 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 7A; Idm: 20A; 96W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 7A
Pulsed drain current: 20A
Power dissipation: 96W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 7A; Idm: 20A; 96W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 7A
Pulsed drain current: 20A
Power dissipation: 96W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT10N120 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 24A; 150W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 150W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; Idm: 24A; 150W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 150W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT10N120AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 24A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 24A
Power dissipation: 150W
Case: HIP247™
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Technology: SiC
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 24A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 24A
Power dissipation: 150W
Case: HIP247™
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Technology: SiC
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT10N120H |
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Hersteller: STMicroelectronics
SCT10N120H SMD N channel transistors
SCT10N120H SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT20N120 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 175W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Gate-source voltage: -10...25V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W
Type of transistor: N-MOSFET
Technology: SiC; SiCFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 175W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Gate-source voltage: -10...25V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT20N120AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 153W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 153W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.16 EUR |
25+ | 18.15 EUR |
30+ | 18.05 EUR |
510+ | 17.46 EUR |
SCT20N120H |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; Idm: 45A; 150W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 45A
Power dissipation: 150W
Case: H2PAK-2
On-state resistance: 239mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: -10...25V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; Idm: 45A; 150W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 45A
Power dissipation: 150W
Case: H2PAK-2
On-state resistance: 239mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: -10...25V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SCT30N120 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Technology: SiC; SiCFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
Gate-source voltage: -10...25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Technology: SiC; SiCFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 26.03 EUR |
30+ | 25.02 EUR |
SCT30N120H |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 42A; Idm: 90A; 230W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 230W
Case: H2PAK-2
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: -10...25V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 42A; Idm: 90A; 230W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 230W
Case: H2PAK-2
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: -10...25V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT50N120 |
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Hersteller: STMicroelectronics
SCT50N120 THT N channel transistors
SCT50N120 THT N channel transistors
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 50.26 EUR |
30+ | 48.33 EUR |
SCTH100N65G2-7AG |
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Hersteller: STMicroelectronics
SCTH100N65G2-7AG SMD N channel transistors
SCTH100N65G2-7AG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCTH35N65G2V-7 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 208W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: H2PAK7
On-state resistance: 67mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 73nC
Gate-source voltage: -10...22V
Pulsed drain current: 90A
Drain current: 45A
Power dissipation: 208W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 208W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: H2PAK7
On-state resistance: 67mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 73nC
Gate-source voltage: -10...22V
Pulsed drain current: 90A
Drain current: 45A
Power dissipation: 208W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCTH35N65G2V-7AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 208W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: H2PAK7
On-state resistance: 67mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 73nC
Gate-source voltage: -10...22V
Pulsed drain current: 90A
Drain current: 45A
Power dissipation: 208W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 90A; 208W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: H2PAK7
On-state resistance: 67mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 73nC
Gate-source voltage: -10...22V
Pulsed drain current: 90A
Drain current: 45A
Power dissipation: 208W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCTH40N120G2V-7 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 100A; 238W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 100A; 238W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCTH40N120G2V7AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 33A; Idm: 92A; 250W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 33A; Idm: 92A; 250W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH