Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (166390) > Seite 1151 nach 2774
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| STTH806DTI | STMicroelectronics |
STTH806DTI THT universal diodes |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH806G-TR | STMicroelectronics |
STTH806G-TR SMD universal diodes |
auf Bestellung 783 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH806TTI | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns Semiconductor structure: double series Max. off-state voltage: 0.6kV Load current: 8A Case: TO220AB Max. forward voltage: 2.6V Max. forward impulse current: 80A Reverse recovery time: 30ns Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH810D | STMicroelectronics |
STTH810D THT universal diodes |
auf Bestellung 107 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH812D | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 8A Case: TO220AC Max. forward voltage: 1.25V Max. forward impulse current: 80A Reverse recovery time: 50ns Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2694 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH812DI | STMicroelectronics |
STTH812DI THT universal diodes |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH812FP | STMicroelectronics |
STTH812FP THT universal diodes |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH812G-TR | STMicroelectronics |
STTH812G-TR SMD universal diodes |
auf Bestellung 523 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH8L06D | STMicroelectronics |
STTH8L06D THT universal diodes |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH8L06FP | STMicroelectronics |
STTH8L06FP THT universal diodes |
auf Bestellung 337 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH8R04D | STMicroelectronics |
STTH8R04D THT universal diodes |
auf Bestellung 222 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH8R04DI | STMicroelectronics |
STTH8R04DI THT universal diodes |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06D | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 8A Case: TO220AC Max. forward voltage: 1.4V Max. forward impulse current: 80A Max. load current: 30A Reverse recovery time: 25ns Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 481 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06DIRG | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220ACIns Max. forward voltage: 1.4V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 172 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06FP | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 8A Case: TO220FPAC Max. forward voltage: 1.4V Max. forward impulse current: 80A Reverse recovery time: 25ns Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH8R06G-TR | STMicroelectronics |
STTH8R06G-TR SMD universal diodes |
auf Bestellung 970 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8S12D | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Case: TO220AC Features of semiconductor devices: ultrafast switching Reverse recovery time: 32ns Heatsink thickness: 1.23...1.32mm Max. forward voltage: 1.75V Load current: 8A Max. forward impulse current: 70A Max. off-state voltage: 1.2kV Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH8ST06DI | STMicroelectronics |
STTH8ST06DI THT universal diodes |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH9012TV1 | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 45A x2 Case: ISOTOP Max. forward voltage: 1.2V Max. forward impulse current: 420A Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw Reverse recovery time: 50ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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STU10NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 107 Stücke: Lieferzeit 7-14 Tag (e) |
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| STU2NK100Z | STMicroelectronics |
STU2NK100Z THT N channel transistors |
auf Bestellung 66 Stücke: Lieferzeit 7-14 Tag (e) |
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STU4N52K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 525V Drain current: 2A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 417 Stücke: Lieferzeit 7-14 Tag (e) |
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STW10NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247 Case: TO247 Mounting: THT Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A On-state resistance: 0.75Ω Gate-source voltage: ±30V Power dissipation: 156W Technology: SuperMesh™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW10NK80Z | STMicroelectronics |
STW10NK80Z THT N channel transistors |
auf Bestellung 152 Stücke: Lieferzeit 7-14 Tag (e) |
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STW11NK100Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD Kind of channel: enhancement Version: ESD Mounting: THT Type of transistor: N-MOSFET Case: TO247 Technology: MDmesh™ Kind of package: tube On-state resistance: 1.38Ω Drain current: 8.3A Power dissipation: 230W Gate-source voltage: ±30V Drain-source voltage: 1kV Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 554 Stücke: Lieferzeit 7-14 Tag (e) |
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STW11NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.8A Pulsed drain current: 36.8A Power dissipation: 200W Case: TO247 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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STW11NM80 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW12N150K5 | STMicroelectronics |
STW12N150K5 THT N channel transistors |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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STW12NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
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STW12NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 230W Case: TO247 Gate-source voltage: ±30V On-state resistance: 880mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1264 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13N95K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Pulsed drain current: 40A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW13NK100Z | STMicroelectronics |
STW13NK100Z THT N channel transistors |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 302 Stücke: Lieferzeit 7-14 Tag (e) |
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STW14NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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STW15N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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STW15NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.8A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 422 Stücke: Lieferzeit 7-14 Tag (e) |
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STW15NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD Case: TO247 Mounting: THT Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Kind of package: tube Technology: SuperMesh™ Polarisation: unipolar On-state resistance: 0.4Ω Power dissipation: 350W Drain current: 9.5A Gate-source voltage: ±30V Drain-source voltage: 900V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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STW18N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 90W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
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STW18NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.19A Power dissipation: 130W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 34nC Pulsed drain current: 52A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW20N90K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 13A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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STW20NK50Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 581 Stücke: Lieferzeit 7-14 Tag (e) |
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STW20NM50FD | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 214W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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STW20NM60FD | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 214W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW21N150K5 | STMicroelectronics |
STW21N150K5 THT N channel transistors |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW21N90K5 | STMicroelectronics |
STW21N90K5 THT N channel transistors |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
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STW24N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 150W Case: TO247 Gate-source voltage: ±25V On-state resistance: 168mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ || Plus Anzahl je Verpackung: 1 Stücke |
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STW26NM50 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247 Polarisation: unipolar Kind of channel: enhancement Mounting: THT Technology: MDmesh™ Type of transistor: N-MOSFET Case: TO247 Drain-source voltage: 500V Drain current: 18.9A On-state resistance: 0.1Ω Power dissipation: 313W Gate-source voltage: ±30V Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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STW26NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 310 Stücke: Lieferzeit 7-14 Tag (e) |
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STW28N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 14A; 170W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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STW28N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 80A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW28NM50N | STMicroelectronics |
STW28NM50N THT N channel transistors |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW30N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 88A Power dissipation: 140W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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STW33N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15.5A Pulsed drain current: 96A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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STW34NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 92mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 314 Stücke: Lieferzeit 7-14 Tag (e) |
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STW34NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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STW3N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247 Case: TO247 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 9Ω Drain current: 1.6A Gate-source voltage: ±30V Power dissipation: 140W Drain-source voltage: 1.5kV Kind of channel: enhancement Technology: PowerMesh™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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STW40N90K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 900V Drain current: 25A Pulsed drain current: 160A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW40NF20 | STMicroelectronics |
STW40NF20 THT N channel transistors |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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STW45N60DM2AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH806DTI | ![]() |
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Hersteller: STMicroelectronics
STTH806DTI THT universal diodes
STTH806DTI THT universal diodes
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 38+ | 1.89 EUR |
| 50+ | 1.63 EUR |
| STTH806G-TR |
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Hersteller: STMicroelectronics
STTH806G-TR SMD universal diodes
STTH806G-TR SMD universal diodes
auf Bestellung 783 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.25 EUR |
| 96+ | 0.75 EUR |
| 102+ | 0.71 EUR |
| 500+ | 0.68 EUR |
| STTH806TTI |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns
Semiconductor structure: double series
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AB
Max. forward voltage: 2.6V
Max. forward impulse current: 80A
Reverse recovery time: 30ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AB; 30ns
Semiconductor structure: double series
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AB
Max. forward voltage: 2.6V
Max. forward impulse current: 80A
Reverse recovery time: 30ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.17 EUR |
| 37+ | 1.96 EUR |
| 41+ | 1.74 EUR |
| 50+ | 1.56 EUR |
| 250+ | 1.52 EUR |
| STTH810D |
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Hersteller: STMicroelectronics
STTH810D THT universal diodes
STTH810D THT universal diodes
auf Bestellung 107 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.49 EUR |
| 66+ | 1.09 EUR |
| 97+ | 0.74 EUR |
| 103+ | 0.7 EUR |
| STTH812D |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Reverse recovery time: 50ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Reverse recovery time: 50ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2694 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 98+ | 0.73 EUR |
| 102+ | 0.71 EUR |
| 113+ | 0.64 EUR |
| 250+ | 0.6 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.49 EUR |
| STTH812DI |
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Hersteller: STMicroelectronics
STTH812DI THT universal diodes
STTH812DI THT universal diodes
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 55+ | 1.3 EUR |
| 59+ | 1.23 EUR |
| 250+ | 1.19 EUR |
| STTH812FP |
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Hersteller: STMicroelectronics
STTH812FP THT universal diodes
STTH812FP THT universal diodes
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 104+ | 0.69 EUR |
| 110+ | 0.65 EUR |
| 1000+ | 0.63 EUR |
| STTH812G-TR |
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Hersteller: STMicroelectronics
STTH812G-TR SMD universal diodes
STTH812G-TR SMD universal diodes
auf Bestellung 523 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 152+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| 7000+ | 0.44 EUR |
| STTH8L06D |
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Hersteller: STMicroelectronics
STTH8L06D THT universal diodes
STTH8L06D THT universal diodes
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.77 EUR |
| 89+ | 0.81 EUR |
| 94+ | 0.76 EUR |
| 250+ | 0.73 EUR |
| STTH8L06FP |
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Hersteller: STMicroelectronics
STTH8L06FP THT universal diodes
STTH8L06FP THT universal diodes
auf Bestellung 337 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 91+ | 0.79 EUR |
| 97+ | 0.74 EUR |
| 250+ | 0.72 EUR |
| STTH8R04D |
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Hersteller: STMicroelectronics
STTH8R04D THT universal diodes
STTH8R04D THT universal diodes
auf Bestellung 222 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 0.61 EUR |
| 126+ | 0.57 EUR |
| 127+ | 0.56 EUR |
| 133+ | 0.54 EUR |
| STTH8R04DI |
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Hersteller: STMicroelectronics
STTH8R04DI THT universal diodes
STTH8R04DI THT universal diodes
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.2 EUR |
| 38+ | 1.89 EUR |
| 250+ | 1.12 EUR |
| STTH8R06D | ![]() |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Max. load current: 30A
Reverse recovery time: 25ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Max. load current: 30A
Reverse recovery time: 25ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 481 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 73+ | 0.98 EUR |
| 88+ | 0.82 EUR |
| 111+ | 0.65 EUR |
| 117+ | 0.61 EUR |
| STTH8R06DIRG |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 1.4V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 1.4V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 172 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.9 EUR |
| 53+ | 1.36 EUR |
| 68+ | 1.07 EUR |
| 92+ | 0.78 EUR |
| 106+ | 0.68 EUR |
| 114+ | 0.63 EUR |
| STTH8R06FP |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220FPAC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Reverse recovery time: 25ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220FPAC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Reverse recovery time: 25ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 118+ | 0.61 EUR |
| STTH8R06G-TR |
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Hersteller: STMicroelectronics
STTH8R06G-TR SMD universal diodes
STTH8R06G-TR SMD universal diodes
auf Bestellung 970 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.12 EUR |
| 99+ | 0.73 EUR |
| 104+ | 0.69 EUR |
| 500+ | 0.68 EUR |
| STTH8S12D |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Case: TO220AC
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 32ns
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.75V
Load current: 8A
Max. forward impulse current: 70A
Max. off-state voltage: 1.2kV
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Case: TO220AC
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 32ns
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.75V
Load current: 8A
Max. forward impulse current: 70A
Max. off-state voltage: 1.2kV
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.37 EUR |
| 68+ | 1.06 EUR |
| 100+ | 0.72 EUR |
| STTH8ST06DI |
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Hersteller: STMicroelectronics
STTH8ST06DI THT universal diodes
STTH8ST06DI THT universal diodes
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 38+ | 1.92 EUR |
| 40+ | 1.8 EUR |
| 250+ | 1.73 EUR |
| STTH9012TV1 | ![]() |
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Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 45A x2
Case: ISOTOP
Max. forward voltage: 1.2V
Max. forward impulse current: 420A
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 45A x2
Case: ISOTOP
Max. forward voltage: 1.2V
Max. forward impulse current: 420A
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 38.05 EUR |
| STU10NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 107 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| 42+ | 1.72 EUR |
| 49+ | 1.49 EUR |
| 75+ | 1.34 EUR |
| 300+ | 1.27 EUR |
| STU2NK100Z |
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Hersteller: STMicroelectronics
STU2NK100Z THT N channel transistors
STU2NK100Z THT N channel transistors
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.02 EUR |
| 66+ | 1.09 EUR |
| 72+ | 0.99 EUR |
| 5025+ | 0.83 EUR |
| STU4N52K3 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 2A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 2A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 417 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 143+ | 0.5 EUR |
| 205+ | 0.35 EUR |
| 217+ | 0.33 EUR |
| STW10NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
Power dissipation: 156W
Technology: SuperMesh™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
Power dissipation: 156W
Technology: SuperMesh™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.99 EUR |
| 30+ | 2.39 EUR |
| STW10NK80Z | ![]() |
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Hersteller: STMicroelectronics
STW10NK80Z THT N channel transistors
STW10NK80Z THT N channel transistors
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.84 EUR |
| 35+ | 2.09 EUR |
| 37+ | 1.97 EUR |
| STW11NK100Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247
Technology: MDmesh™
Kind of package: tube
On-state resistance: 1.38Ω
Drain current: 8.3A
Power dissipation: 230W
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247; ESD
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247
Technology: MDmesh™
Kind of package: tube
On-state resistance: 1.38Ω
Drain current: 8.3A
Power dissipation: 230W
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 554 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.55 EUR |
| 32+ | 2.26 EUR |
| 34+ | 2.13 EUR |
| STW11NK90Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Pulsed drain current: 36.8A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Pulsed drain current: 36.8A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.72 EUR |
| 23+ | 3.1 EUR |
| STW11NM80 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.29 EUR |
| 22+ | 3.35 EUR |
| 23+ | 3.17 EUR |
| 510+ | 3.05 EUR |
| STW12N150K5 |
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Hersteller: STMicroelectronics
STW12N150K5 THT N channel transistors
STW12N150K5 THT N channel transistors
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.32 EUR |
| 10+ | 7.38 EUR |
| 11+ | 6.98 EUR |
| STW12NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 34+ | 2.16 EUR |
| 35+ | 2.04 EUR |
| STW12NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1264 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.85 EUR |
| 27+ | 2.66 EUR |
| 29+ | 2.52 EUR |
| STW13N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.26 EUR |
| 18+ | 4.16 EUR |
| 19+ | 3.95 EUR |
| STW13N95K3 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.35 EUR |
| 13+ | 5.72 EUR |
| 30+ | 5.05 EUR |
| 120+ | 4.53 EUR |
| 300+ | 4.46 EUR |
| STW13NK100Z |
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Hersteller: STMicroelectronics
STW13NK100Z THT N channel transistors
STW13NK100Z THT N channel transistors
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.71 EUR |
| 10+ | 7.25 EUR |
| 11+ | 6.86 EUR |
| STW13NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 302 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 34+ | 2.12 EUR |
| 43+ | 1.67 EUR |
| 46+ | 1.59 EUR |
| STW14NK50Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 34+ | 2.1 EUR |
| STW15N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.51 EUR |
| 20+ | 4.06 EUR |
| STW15NK50Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 422 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.18 EUR |
| 42+ | 1.72 EUR |
| 45+ | 1.62 EUR |
| STW15NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Case: TO247
Mounting: THT
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 350W
Drain current: 9.5A
Gate-source voltage: ±30V
Drain-source voltage: 900V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Case: TO247
Mounting: THT
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 350W
Drain current: 9.5A
Gate-source voltage: ±30V
Drain-source voltage: 900V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.34 EUR |
| 22+ | 3.39 EUR |
| 23+ | 3.2 EUR |
| STW18N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.63 EUR |
| 34+ | 2.16 EUR |
| 35+ | 2.06 EUR |
| STW18NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 52A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 52A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 27+ | 2.69 EUR |
| 30+ | 2.46 EUR |
| 90+ | 2.26 EUR |
| 120+ | 2.22 EUR |
| 300+ | 2.09 EUR |
| 510+ | 2.02 EUR |
| STW20N90K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; Idm: 80A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.79 EUR |
| 13+ | 5.93 EUR |
| 14+ | 5.43 EUR |
| STW20NK50Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.56 EUR |
| 22+ | 3.35 EUR |
| 33+ | 2.23 EUR |
| 120+ | 2 EUR |
| 510+ | 1.8 EUR |
| STW20NM50FD |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.19 EUR |
| 30+ | 4.13 EUR |
| 510+ | 3.85 EUR |
| 600+ | 3.82 EUR |
| STW20NM60FD |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 214W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 214W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.71 EUR |
| 18+ | 4.19 EUR |
| 30+ | 3.9 EUR |
| 90+ | 3.62 EUR |
| 120+ | 3.55 EUR |
| 510+ | 3.19 EUR |
| 990+ | 3.02 EUR |
| STW21N150K5 |
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Hersteller: STMicroelectronics
STW21N150K5 THT N channel transistors
STW21N150K5 THT N channel transistors
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.09 EUR |
| STW21N90K5 |
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Hersteller: STMicroelectronics
STW21N90K5 THT N channel transistors
STW21N90K5 THT N channel transistors
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.92 EUR |
| 11+ | 6.52 EUR |
| STW24N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ || Plus
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ || Plus
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW26NM50 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Polarisation: unipolar
Kind of channel: enhancement
Mounting: THT
Technology: MDmesh™
Type of transistor: N-MOSFET
Case: TO247
Drain-source voltage: 500V
Drain current: 18.9A
On-state resistance: 0.1Ω
Power dissipation: 313W
Gate-source voltage: ±30V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Polarisation: unipolar
Kind of channel: enhancement
Mounting: THT
Technology: MDmesh™
Type of transistor: N-MOSFET
Case: TO247
Drain-source voltage: 500V
Drain current: 18.9A
On-state resistance: 0.1Ω
Power dissipation: 313W
Gate-source voltage: ±30V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.57 EUR |
| 15+ | 4.82 EUR |
| 16+ | 4.56 EUR |
| STW26NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 310 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.45 EUR |
| 16+ | 4.56 EUR |
| 30+ | 4.05 EUR |
| 60+ | 3.83 EUR |
| 90+ | 3.72 EUR |
| 120+ | 3.66 EUR |
| 510+ | 3.4 EUR |
| STW28N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.56 EUR |
| 22+ | 3.4 EUR |
| 26+ | 2.79 EUR |
| STW28N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.88 EUR |
| 16+ | 4.48 EUR |
| 21+ | 3.5 EUR |
| 30+ | 3.27 EUR |
| STW28NM50N |
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Hersteller: STMicroelectronics
STW28NM50N THT N channel transistors
STW28NM50N THT N channel transistors
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 10.07 EUR |
| 27+ | 2.75 EUR |
| 28+ | 2.6 EUR |
| STW30N65M5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| STW33N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.72 EUR |
| 17+ | 4.36 EUR |
| 30+ | 4.35 EUR |
| 120+ | 4.23 EUR |
| STW34NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 314 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.01 EUR |
| 30+ | 5.75 EUR |
| STW34NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.07 EUR |
| 10+ | 7.21 EUR |
| 30+ | 5.29 EUR |
| STW3N150 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 9Ω
Drain current: 1.6A
Gate-source voltage: ±30V
Power dissipation: 140W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: PowerMesh™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 9Ω
Drain current: 1.6A
Gate-source voltage: ±30V
Power dissipation: 140W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: PowerMesh™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.39 EUR |
| 18+ | 4.15 EUR |
| 19+ | 3.92 EUR |
| STW40N90K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 16.46 EUR |
| STW40NF20 |
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Hersteller: STMicroelectronics
STW40NF20 THT N channel transistors
STW40NF20 THT N channel transistors
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| 13+ | 5.51 EUR |
| 30+ | 3.62 EUR |
| STW45N60DM2AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.09 EUR |
| 13+ | 5.69 EUR |















