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STM32MP257DAL3 STMicroelectronics stm32mp257d.pdf Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: ARM microprocessor
Kind of core: 32-bit
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STM32MP257DAK3 STMicroelectronics stm32mp257d.pdf Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: ARM microprocessor
Kind of core: 32-bit
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STM32MP257FAL3 STMicroelectronics stm32mp257f.pdf Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: I2C; SPI
Operating temperature: -40...125°C
Kind of core: 32-bit
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PM8803TR PM8803TR STMicroelectronics en.DM00024225.pdf Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
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PM8805TR STMicroelectronics pm8805.pdf Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN43
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN43
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
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PM8800A PM8800A STMicroelectronics en.CD00171097.pdf Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
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PM8800ATR PM8800ATR STMicroelectronics en.CD00171097.pdf Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
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PM8801 STMicroelectronics Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP24
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP24
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
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PM8803 PM8803 STMicroelectronics en.DM00024225.pdf Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
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PM8804TR STMicroelectronics en.DM00487645.pdf Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
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STB30NF10T4 STB30NF10T4 STMicroelectronics STB30NF10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STP30NF20 STP30NF20 STMicroelectronics STP30NF20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW13N80K5 STW13N80K5 STMicroelectronics STB13N80K5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP13N80K5 STP13N80K5 STMicroelectronics STB13N80K5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STB13N80K5 STB13N80K5 STMicroelectronics STB13N80K5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STFU13N80K5 STFU13N80K5 STMicroelectronics STFU13N80K5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STF15N80K5 STF15N80K5 STMicroelectronics stf15n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW15N80K5 STW15N80K5 STMicroelectronics STx15N80K5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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TIP127 TIP127 STMicroelectronics TIP127.pdf Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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STTH16L06CFP STTH16L06CFP STMicroelectronics stth16l06c.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube
Case: TO220FPAB
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Max. forward impulse current: 120A
Max. forward voltage: 1.05V
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STTH16L06CT STTH16L06CT STMicroelectronics en.CD00043014.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Leakage current: 8µA
Type of diode: rectifying
Max. forward impulse current: 120A
Max. forward voltage: 2.08V
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STTH16L06CTY STTH16L06CTY STMicroelectronics stth16l06c-y.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Leakage current: 8µA
Type of diode: rectifying
Max. forward impulse current: 120A
Max. forward voltage: 2.08V
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STTH1212D STTH1212D STMicroelectronics STTH1212D-DTE.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.25V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 50ns
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STTH1R04A STTH1R04A STMicroelectronics stth1r04.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 0.9V
Reverse recovery time: 14ns
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ST25DV04K-JFR6D3 STMicroelectronics st25dv04k.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
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ST25DV64KC-JF8D3 STMicroelectronics st25dv16kc.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
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STM32L412K8T6 STM32L412K8T6 STMicroelectronics stm32l412c8.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
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M48T37V-10MH1F M48T37V-10MH1F STMicroelectronics en.CD00002033.pdf Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory: 256kb SRAM
Mounting: SMD
Case: BSSOP44
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Operating voltage: 3...3.6V
Trade name: TIMEKEEPER®
Kind of integrated circuit: timer/calendar
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M48T35AV-10MH1F M48T35AV-10MH1F STMicroelectronics en.CD00001939.pdf Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory: 256kb SRAM
Mounting: SMD
Case: SOH28
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Operating voltage: 3...3.6V
Trade name: TIMEKEEPER®
Kind of integrated circuit: timer/calendar
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VN5E010MHTR-E STMicroelectronics en.CD00233832.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; HPAK
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: HPAK
On-state resistance: 10mΩ
Active logical level: high
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ESDLIN03-1BWY ESDLIN03-1BWY STMicroelectronics en.DM00222123.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 250W; 28.5V; 3.7A; bidirectional; SOT323
Mounting: SMD
Case: SOT323
Max. forward impulse current: 3.7A
Peak pulse power dissipation: 0.25kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 3.5pF
Type of diode: TVS
Breakdown voltage: 28.5V
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STTH1210DI STTH1210DI STMicroelectronics STTH1210DI.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220ACIns; tube; 48ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 48ns
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STTH1210D STTH1210D STMicroelectronics stth1210.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220AC; tube; 48ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 48ns
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STTH12010TV1 STTH12010TV1 STMicroelectronics stth12010tv.pdf description Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; ISOTOP; screw
Max. off-state voltage: 1kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 750A
Case: ISOTOP
Max. forward voltage: 1.3V
Max. load current: 150A
Reverse recovery time: 49ns
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
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STTH12T06DI STTH12T06DI STMicroelectronics STTH12T06DI.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 90A; TO220ACIns; tube; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 90A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 2.05V
Max. load current: 65A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 23ns
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STTH12S06FP STMicroelectronics en.CD00165838.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 100A; TO220FPAC; tube; 14ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 3.4V
Reverse recovery time: 14ns
Leakage current: 30µA
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STPS15L45CB STPS15L45CB STMicroelectronics stps15l45c.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.4V
Max. load current: 10A
Max. forward impulse current: 75A
Kind of package: tube
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STPS15L45CBY-TR STPS15L45CBY-TR STMicroelectronics stps15l45c.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. load current: 15A
Max. forward impulse current: 75A
Kind of package: reel; tape
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SPSGRFC-868 STMicroelectronics dm00347814.pdf Category: RF modules
Description: U.FL; GFSK,GMSK,OOK; 868MHz; SPI; -118dBm; 11.6dBm; SMD; 500kbps
Kind of antenna: u.FL
Kind of modulation: GFSK; GMSK; OOK
Frequency: 868MHz
Interface: SPI
Receiver sensitivity: -118dBm
Transmitter output power: 11.6dBm
Mounting: SMD
Communications modules features: antenna
Data transfer rate: 500kbps
Operating temperature: -40...85°C
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LF18ABDT-TR LF18ABDT-TR STMicroelectronics lfxx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; DPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: DPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Input voltage: 2.5...16V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.45V
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LF18ABPT-TR STMicroelectronics lfxx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; PPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: PPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Input voltage: 2.5...16V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.45V
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STD4NK80ZT4 STD4NK80ZT4 STMicroelectronics STP4NK80Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STL50DN6F7 STMicroelectronics en.DM00216100.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 57A; Idm: 228A; 62.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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STM8S105S6T6C STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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STM8S105K4T3C STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K6T3C STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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STM8S105C4T3 STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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STM8S105C4T6 STMicroelectronics en.CD00200092.pdf description Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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STM8S105C4T6TR STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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STM8S105K4T3CTR STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K4T6CTR STM8S105K4T6CTR STMicroelectronics STM8S105C4-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K6T3CTR STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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STM8S105K6U6A STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; VFQFPN32; 3÷5.5VDC; PWM: 4; STM8S
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STM8S105K6U6ATR STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN32; 3÷5.5VDC; PWM: 4; STM8S
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STM8S105S4T6CTR STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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STM8S105S6T3C STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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STM8S105S6T6CTR STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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STM8S105K4U3ATR STMicroelectronics en.CD00200092.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN32; PWM: 2; STM8S
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN32
Interface: I2C; IrDA; LIN; SPI; USART
Number of PWM channels: 2
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STD15NF10T4 STD15NF10T4 STMicroelectronics STD15NF10T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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TS941ILT TS941ILT STMicroelectronics ts941.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10kHz; Ch: 1; 2.5÷10VDC; SOT23-5; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 10kHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...10V DC
Case: SOT23-5
Operating temperature: -40...85°C
Slew rate: 0.45V/μs
Integrated circuit features: rail-to-rail output; universal
Input offset voltage: 10mV
Input bias current: 0.15nA
Input offset current: 0.1nA
Kind of package: reel; tape
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STM32MP257DAL3 stm32mp257d.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: ARM microprocessor
Kind of core: 32-bit
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STM32MP257DAK3 stm32mp257d.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Interface: CAN; Ethernet; I2C; I2S
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: ARM microprocessor
Kind of core: 32-bit
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STM32MP257FAL3 stm32mp257f.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microprocessor; -40÷125°C; Core: 32-bit
Type of integrated circuit: ARM microprocessor
Mounting: SMD
Interface: I2C; SPI
Operating temperature: -40...125°C
Kind of core: 32-bit
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Mindestbestellmenge: 50 Stücke
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PM8803TR en.DM00024225.pdf
Hersteller: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
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PM8805TR pm8805.pdf
Hersteller: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN43
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN43
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
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PM8800A en.CD00171097.pdf
Hersteller: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
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PM8800ATR en.CD00171097.pdf
Hersteller: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
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PM8801
Hersteller: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP24
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP24
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
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PM8803 en.DM00024225.pdf
Hersteller: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; HTSSOP20
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: HTSSOP20
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
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PM8804TR en.DM00487645.pdf
Hersteller: STMicroelectronics
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; power controller; PoE Ethernet; VFQFPN16
Type of integrated circuit: Ethernet interface
Kind of integrated circuit: power controller
Interface: PoE Ethernet
Case: VFQFPN16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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STB30NF10T4 STB30NF10.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STP30NF20 STP30NF20.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW13N80K5 STB13N80K5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP13N80K5 STB13N80K5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STB13N80K5 STB13N80K5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STFU13N80K5 STFU13N80K5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STF15N80K5 stf15n80k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 14A; 35W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW15N80K5 STx15N80K5-DTE.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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TIP127 TIP127.pdf
Hersteller: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 5A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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STTH16L06CFP stth16l06c.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220FPAB; tube
Case: TO220FPAB
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Max. forward impulse current: 120A
Max. forward voltage: 1.05V
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STTH16L06CT en.CD00043014.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 120A; TO220AB; tube; 35ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Leakage current: 8µA
Type of diode: rectifying
Max. forward impulse current: 120A
Max. forward voltage: 2.08V
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STTH16L06CTY stth16l06c-y.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; Ifsm: 120A; TO220AB; tube; Ir: 8uA
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Leakage current: 8µA
Type of diode: rectifying
Max. forward impulse current: 120A
Max. forward voltage: 2.08V
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STTH1212D STTH1212D-DTE.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; Ifsm: 100A; TO220AC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.25V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 50ns
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STTH1R04A stth1r04.pdf
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 14ns; SMA; Ufmax: 0.9V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Max. forward voltage: 0.9V
Reverse recovery time: 14ns
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ST25DV04K-JFR6D3 st25dv04k.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
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ST25DV64KC-JF8D3 st25dv16kc.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...105°C
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STM32L412K8T6 stm32l412c8.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: LQFP32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
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M48T37V-10MH1F en.CD00002033.pdf
Hersteller: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory: 256kb SRAM
Mounting: SMD
Case: BSSOP44
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Operating voltage: 3...3.6V
Trade name: TIMEKEEPER®
Kind of integrated circuit: timer/calendar
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M48T35AV-10MH1F en.CD00001939.pdf
Hersteller: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; timer/calendar; parallel; NV SRAM; 256kbSRAM
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory: 256kb SRAM
Mounting: SMD
Case: SOH28
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Operating voltage: 3...3.6V
Trade name: TIMEKEEPER®
Kind of integrated circuit: timer/calendar
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VN5E010MHTR-E en.CD00233832.pdf
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; HPAK
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: HPAK
On-state resistance: 10mΩ
Active logical level: high
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ESDLIN03-1BWY en.DM00222123.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 250W; 28.5V; 3.7A; bidirectional; SOT323
Mounting: SMD
Case: SOT323
Max. forward impulse current: 3.7A
Peak pulse power dissipation: 0.25kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 3.5pF
Type of diode: TVS
Breakdown voltage: 28.5V
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STTH1210DI STTH1210DI.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220ACIns; tube; 48ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 48ns
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STTH1210D stth1210.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; Ifsm: 80A; TO220AC; tube; 48ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 80A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.3V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 48ns
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STTH12010TV1 description stth12010tv.pdf
Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; ISOTOP; screw
Max. off-state voltage: 1kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 750A
Case: ISOTOP
Max. forward voltage: 1.3V
Max. load current: 150A
Reverse recovery time: 49ns
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
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STTH12T06DI STTH12T06DI.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 90A; TO220ACIns; tube; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 90A
Case: TO220ACIns
Kind of package: tube
Max. forward voltage: 2.05V
Max. load current: 65A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 23ns
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STTH12S06FP en.CD00165838.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 12A; Ifsm: 100A; TO220FPAC; tube; 14ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 100A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 3.4V
Reverse recovery time: 14ns
Leakage current: 30µA
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STPS15L45CB stps15l45c.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.4V
Max. load current: 10A
Max. forward impulse current: 75A
Kind of package: tube
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STPS15L45CBY-TR stps15l45c.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Max. load current: 15A
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SPSGRFC-868 dm00347814.pdf
Hersteller: STMicroelectronics
Category: RF modules
Description: U.FL; GFSK,GMSK,OOK; 868MHz; SPI; -118dBm; 11.6dBm; SMD; 500kbps
Kind of antenna: u.FL
Kind of modulation: GFSK; GMSK; OOK
Frequency: 868MHz
Interface: SPI
Receiver sensitivity: -118dBm
Transmitter output power: 11.6dBm
Mounting: SMD
Communications modules features: antenna
Data transfer rate: 500kbps
Operating temperature: -40...85°C
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LF18ABDT-TR lfxx.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; DPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: DPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Input voltage: 2.5...16V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.45V
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LF18ABPT-TR lfxx.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.5A; PPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: PPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LFXX
Input voltage: 2.5...16V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.45V
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STD4NK80ZT4 STP4NK80Z.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STL50DN6F7 en.DM00216100.pdf
Hersteller: STMicroelectronics
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 57A; Idm: 228A; 62.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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STM8S105S6T6C en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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STM8S105K4T3C en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K6T3C en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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STM8S105C4T3 en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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STM8S105C4T6 description en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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STM8S105C4T6TR en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
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STM8S105K4T3CTR en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K4T6CTR STM8S105C4-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K6T3CTR en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
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STM8S105K6U6A en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; VFQFPN32; 3÷5.5VDC; PWM: 4; STM8S
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STM8S105K6U6ATR en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN32; 3÷5.5VDC; PWM: 4; STM8S
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STM8S105S4T6CTR en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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STM8S105S6T3C en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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STM8S105S6T6CTR en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
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STM8S105K4U3ATR en.CD00200092.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN32; PWM: 2; STM8S
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN32
Interface: I2C; IrDA; LIN; SPI; USART
Number of PWM channels: 2
Family: STM8S
Kind of core: 8-bit
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STD15NF10T4 STD15NF10T4.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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TS941ILT ts941.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10kHz; Ch: 1; 2.5÷10VDC; SOT23-5; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 10kHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 2.5...10V DC
Case: SOT23-5
Operating temperature: -40...85°C
Slew rate: 0.45V/μs
Integrated circuit features: rail-to-rail output; universal
Input offset voltage: 10mV
Input bias current: 0.15nA
Input offset current: 0.1nA
Kind of package: reel; tape
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