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SMP100LC-230 SMP100LC-230 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 230V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 285V
Voltage - Off State: 230V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-270 SMP100LC-270 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 270V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 335V
Voltage - Off State: 270V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 5000 Stücke:
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2500+0.49 EUR
5000+0.46 EUR
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SMP100LC-35 SMP100LC-35 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 35V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 55pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 55V
Voltage - Off State: 35V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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2500+0.49 EUR
5000+0.45 EUR
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SMP100LC-360 SMP100LC-360 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 360V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 50pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 450V
Voltage - Off State: 360V
Supplier Device Package: SMB
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-400 SMP100LC-400 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 400V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 45pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 530V
Voltage - Off State: 400V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-65 SMP100LC-65 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 65V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 85V
Voltage - Off State: 65V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-90 SMP100LC-90 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 90V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 125V
Voltage - Off State: 90V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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STB16NK65Z-S STB16NK65Z-S STMicroelectronics STP16NK65Z,%20STB16NK65Z-S.pdf Description: MOSFET N-CH 650V 13A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 25 V
Produkt ist nicht verfügbar
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STB16PF06LT4 STB16PF06LT4 STMicroelectronics en.CD00043972.pdf Description: MOSFET P-CH 60V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Produkt ist nicht verfügbar
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STD100NH02LT4 STD100NH02LT4 STMicroelectronics STD100NH02L.pdf Description: MOSFET N-CH 24V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3940 pF @ 15 V
Produkt ist nicht verfügbar
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STD30NF06LT4 STD30NF06LT4 STMicroelectronics STD30NF06L.pdf Description: MOSFET N-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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STD3NK60ZT4 STD3NK60ZT4 STMicroelectronics en.CD00003099.pdf Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
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STD4NK50ZT4 STD4NK50ZT4 STMicroelectronics en.CD00003100.pdf Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
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STD55NH2LLT4 STD55NH2LLT4 STMicroelectronics en.CD00003467.pdf Description: MOSFET N-CH 24V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Produkt ist nicht verfügbar
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STD95NH02LT4 STD95NH02LT4 STMicroelectronics en.CD00042750.pdf Description: MOSFET N-CH 24V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
Produkt ist nicht verfügbar
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STGB10NB37LZT4 STGB10NB37LZT4 STMicroelectronics en.CD00002226.pdf Description: IGBT 440V 20A 125W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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STGB7NB60HDT4 STGB7NB60HDT4 STMicroelectronics STGB7NB60HD.pdf Description: IGBT 600V 14A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 85µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 42 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGB7NC60HDT4 STGB7NC60HDT4 STMicroelectronics en.CD00003695.pdf Description: IGBT 600V 25A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGD3NB60SDT4 STGD3NB60SDT4 STMicroelectronics STGD3NB60SD.pdf Description: IGBT 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 125µs/-
Switching Energy: 1.15mJ (off)
Test Condition: 480V, 3A, 1kOhm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 48 W
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2500+0.67 EUR
Mindestbestellmenge: 2500
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STGD7NB60KT4 STGD7NB60KT4 STMicroelectronics STG%28D%2CP%297NB60K.pdf Description: IGBT 600V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 15ns/50ns
Switching Energy: 95µJ (on), 140µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 32.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 70 W
Produkt ist nicht verfügbar
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STGD7NC60HT4 STGD7NC60HT4 STMicroelectronics stgd7nc60ht4.pdf Description: IGBT 600V 25A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 70 W
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STGP7NB60KD STGP7NB60KD STMicroelectronics STGB%2CSTGP%207NB60KD.pdf Description: IGBT 600V 14A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 15ns/50ns
Switching Energy: 140µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 32.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGP7NC60H STGP7NC60H STMicroelectronics stgd7nc60ht4.pdf Description: IGBT 600V 25A 80W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STL50NH3LL STL50NH3LL STMicroelectronics en.CD00041562.pdf Description: MOSFET N-CH 30V 27A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 25 V
Produkt ist nicht verfügbar
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STL8NH3LL STL8NH3LL STMicroelectronics CD00041561.pdf Description: MOSFET N-CH 30V 8A PWRFLAT3.3SQ
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STP10NK60Z STP10NK60Z STMicroelectronics en.CD00002815.pdf Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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4+5.61 EUR
50+2.60 EUR
100+2.59 EUR
500+2.57 EUR
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STP120NF10 STP120NF10 STMicroelectronics en.CD00003356.pdf Description: MOSFET N-CH 100V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
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STP16NK65Z STP16NK65Z STMicroelectronics STP16NK65Z%2C%20STB16NK65Z-S.pdf Description: MOSFET N-CH 650V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 25 V
Produkt ist nicht verfügbar
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STS10PF30L STS10PF30L STMicroelectronics STS10PF30L.pdf Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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STS11NF30L STS11NF30L STMicroelectronics STS11NF30L.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
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STS12NH3LL STS12NH3LL STMicroelectronics en.CD00005077.pdf Description: MOSFET N-CH 30V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 6A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 25 V
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STS3DPF60L STS3DPF60L STMicroelectronics CD00043977.pdf Description: MOSFET 2P-CH 60V 3A 8-SOIC
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STW220NF75 STW220NF75 STMicroelectronics en.CD00003360.pdf Description: MOSFET N-CH 75V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 60A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 25 V
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TSA1203IF TSA1203IF STMicroelectronics TSA1203.pdf Description: IC ADC 12BIT PIPELINED 48TQFP
Packaging: Tray
Features: Simultaneous Sampling
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Number of Bits: 12
Configuration: S/H-ADC
Data Interface: Parallel
Reference Type: External, Internal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Analog: 2.25V ~ 2.7V
Voltage - Supply, Digital: 2.25V ~ 2.7V
Sampling Rate (Per Second): 40M
Input Type: Differential
Number of Inputs: 2
Supplier Device Package: 48-TQFP (7x7)
Architecture: Pipelined
Ratio - S/H:ADC: 1:1
Number of A/D Converters: 1
Produkt ist nicht verfügbar
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SMP100LC-120 SMP100LC-120 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 120V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 150V
Voltage - Off State: 120V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-140 SMP100LC-140 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 140V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 65pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 175V
Voltage - Off State: 140V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-160 SMP100LC-160 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 160V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 65pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 200V
Voltage - Off State: 160V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-200 SMP100LC-200 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 200V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 250V
Voltage - Off State: 200V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-230 SMP100LC-230 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 230V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 285V
Voltage - Off State: 230V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-270 SMP100LC-270 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 270V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 335V
Voltage - Off State: 270V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-35 SMP100LC-35 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 35V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 55pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 55V
Voltage - Off State: 35V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-360 SMP100LC-360 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 360V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 50pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 450V
Voltage - Off State: 360V
Supplier Device Package: SMB
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-400 SMP100LC-400 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 400V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 45pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 530V
Voltage - Off State: 400V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-65 SMP100LC-65 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 65V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 85V
Voltage - Off State: 65V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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SMP100LC-90 SMP100LC-90 STMicroelectronics en.CD00002051.pdf Description: THYRISTOR 90V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 125V
Voltage - Off State: 90V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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STB16PF06LT4 STB16PF06LT4 STMicroelectronics en.CD00043972.pdf Description: MOSFET P-CH 60V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Produkt ist nicht verfügbar
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STD100NH02LT4 STD100NH02LT4 STMicroelectronics STD100NH02L.pdf Description: MOSFET N-CH 24V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3940 pF @ 15 V
Produkt ist nicht verfügbar
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STD30NF06LT4 STD30NF06LT4 STMicroelectronics STD30NF06L.pdf Description: MOSFET N-CH 60V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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STD3NK60ZT4 STD3NK60ZT4 STMicroelectronics en.CD00003099.pdf Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
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STD4NK50ZT4 STD4NK50ZT4 STMicroelectronics en.CD00003100.pdf Description: MOSFET N-CH 500V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
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STD95NH02LT4 STD95NH02LT4 STMicroelectronics en.CD00042750.pdf Description: MOSFET N-CH 24V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
Produkt ist nicht verfügbar
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STGB10NB37LZT4 STGB10NB37LZT4 STMicroelectronics en.CD00002226.pdf Description: IGBT 440V 20A 125W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
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STGB7NC60HDT4 STGB7NC60HDT4 STMicroelectronics en.CD00003695.pdf Description: IGBT 600V 25A 80W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
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STGD3NB60SDT4 STGD3NB60SDT4 STMicroelectronics STGD3NB60SD.pdf Description: IGBT 600V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 125µs/-
Switching Energy: 1.15mJ (off)
Test Condition: 480V, 3A, 1kOhm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 48 W
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8+2.48 EUR
12+1.57 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
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STGD7NC60HT4 STGD7NC60HT4 STMicroelectronics stgd7nc60ht4.pdf Description: IGBT 600V 25A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 70 W
auf Bestellung 9872 Stücke:
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4+5.72 EUR
10+3.73 EUR
100+2.60 EUR
500+2.11 EUR
1000+1.96 EUR
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STL50NH3LL STL50NH3LL STMicroelectronics en.CD00041562.pdf Description: MOSFET N-CH 30V 27A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 25 V
Produkt ist nicht verfügbar
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STL8NH3LL STL8NH3LL STMicroelectronics CD00041561.pdf Description: MOSFET N-CH 30V 8A PWRFLAT3.3SQ
auf Bestellung 27092 Stücke:
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STS10PF30L STS10PF30L STMicroelectronics STS10PF30L.pdf Description: MOSFET P-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
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STS11NF30L STS11NF30L STMicroelectronics STS11NF30L.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Produkt ist nicht verfügbar
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STS12NH3LL STS12NH3LL STMicroelectronics en.CD00005077.pdf Description: MOSFET N-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 6A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 25 V
Produkt ist nicht verfügbar
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SMP100LC-230 en.CD00002051.pdf
SMP100LC-230
Hersteller: STMicroelectronics
Description: THYRISTOR 230V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 285V
Voltage - Off State: 230V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-270 en.CD00002051.pdf
SMP100LC-270
Hersteller: STMicroelectronics
Description: THYRISTOR 270V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 335V
Voltage - Off State: 270V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.49 EUR
5000+0.46 EUR
Mindestbestellmenge: 2500
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SMP100LC-35 en.CD00002051.pdf
SMP100LC-35
Hersteller: STMicroelectronics
Description: THYRISTOR 35V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 55pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 55V
Voltage - Off State: 35V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.49 EUR
5000+0.45 EUR
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SMP100LC-360 en.CD00002051.pdf
SMP100LC-360
Hersteller: STMicroelectronics
Description: THYRISTOR 360V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 50pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 450V
Voltage - Off State: 360V
Supplier Device Package: SMB
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-400 en.CD00002051.pdf
SMP100LC-400
Hersteller: STMicroelectronics
Description: THYRISTOR 400V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 45pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 530V
Voltage - Off State: 400V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-65 en.CD00002051.pdf
SMP100LC-65
Hersteller: STMicroelectronics
Description: THYRISTOR 65V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 85V
Voltage - Off State: 65V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
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SMP100LC-90 en.CD00002051.pdf
SMP100LC-90
Hersteller: STMicroelectronics
Description: THYRISTOR 90V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 125V
Voltage - Off State: 90V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.90 EUR
Mindestbestellmenge: 2500
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STB16NK65Z-S STP16NK65Z,%20STB16NK65Z-S.pdf
STB16NK65Z-S
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 13A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 25 V
Produkt ist nicht verfügbar
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STB16PF06LT4 en.CD00043972.pdf
STB16PF06LT4
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Produkt ist nicht verfügbar
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STD100NH02LT4 STD100NH02L.pdf
STD100NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3940 pF @ 15 V
Produkt ist nicht verfügbar
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STD30NF06LT4 STD30NF06L.pdf
STD30NF06LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.81 EUR
Mindestbestellmenge: 2500
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STD3NK60ZT4 en.CD00003099.pdf
STD3NK60ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.81 EUR
5000+0.78 EUR
Mindestbestellmenge: 2500
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STD4NK50ZT4 en.CD00003100.pdf
STD4NK50ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
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STD55NH2LLT4 en.CD00003467.pdf
STD55NH2LLT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Produkt ist nicht verfügbar
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STD95NH02LT4 en.CD00042750.pdf
STD95NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
Produkt ist nicht verfügbar
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STGB10NB37LZT4 en.CD00002226.pdf
STGB10NB37LZT4
Hersteller: STMicroelectronics
Description: IGBT 440V 20A 125W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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STGB7NB60HDT4 STGB7NB60HD.pdf
STGB7NB60HDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 14A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 85µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 42 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGB7NC60HDT4 en.CD00003695.pdf
STGB7NC60HDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 25A 80W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGD3NB60SDT4 STGD3NB60SD.pdf
STGD3NB60SDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 125µs/-
Switching Energy: 1.15mJ (off)
Test Condition: 480V, 3A, 1kOhm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 48 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.67 EUR
Mindestbestellmenge: 2500
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STGD7NB60KT4 STG%28D%2CP%297NB60K.pdf
STGD7NB60KT4
Hersteller: STMicroelectronics
Description: IGBT 600V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 15ns/50ns
Switching Energy: 95µJ (on), 140µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 32.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 70 W
Produkt ist nicht verfügbar
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STGD7NC60HT4 stgd7nc60ht4.pdf
STGD7NC60HT4
Hersteller: STMicroelectronics
Description: IGBT 600V 25A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 70 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.83 EUR
Mindestbestellmenge: 2500
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STGP7NB60KD STGB%2CSTGP%207NB60KD.pdf
STGP7NB60KD
Hersteller: STMicroelectronics
Description: IGBT 600V 14A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 15ns/50ns
Switching Energy: 140µJ (off)
Test Condition: 480V, 7A, 10Ohm, 15V
Gate Charge: 32.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STGP7NC60H stgd7nc60ht4.pdf
STGP7NC60H
Hersteller: STMicroelectronics
Description: IGBT 600V 25A 80W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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STL50NH3LL en.CD00041562.pdf
STL50NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 27A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 25 V
Produkt ist nicht verfügbar
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STL8NH3LL CD00041561.pdf
STL8NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 8A PWRFLAT3.3SQ
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
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STP10NK60Z en.CD00002815.pdf
STP10NK60Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.61 EUR
50+2.60 EUR
100+2.59 EUR
500+2.57 EUR
Mindestbestellmenge: 4
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STP120NF10 en.CD00003356.pdf
STP120NF10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
auf Bestellung 18052 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.44 EUR
50+3.91 EUR
100+3.57 EUR
500+3.35 EUR
Mindestbestellmenge: 3
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STP16NK65Z STP16NK65Z%2C%20STB16NK65Z-S.pdf
STP16NK65Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 25 V
Produkt ist nicht verfügbar
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STS10PF30L STS10PF30L.pdf
STS10PF30L
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
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STS11NF30L STS11NF30L.pdf
STS11NF30L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Produkt ist nicht verfügbar
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STS12NH3LL en.CD00005077.pdf
STS12NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 6A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 25 V
Produkt ist nicht verfügbar
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STS3DPF60L CD00043977.pdf
STS3DPF60L
Hersteller: STMicroelectronics
Description: MOSFET 2P-CH 60V 3A 8-SOIC
Produkt ist nicht verfügbar
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STW220NF75 en.CD00003360.pdf
STW220NF75
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 60A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 25 V
Produkt ist nicht verfügbar
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TSA1203IF TSA1203.pdf
TSA1203IF
Hersteller: STMicroelectronics
Description: IC ADC 12BIT PIPELINED 48TQFP
Packaging: Tray
Features: Simultaneous Sampling
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Number of Bits: 12
Configuration: S/H-ADC
Data Interface: Parallel
Reference Type: External, Internal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Analog: 2.25V ~ 2.7V
Voltage - Supply, Digital: 2.25V ~ 2.7V
Sampling Rate (Per Second): 40M
Input Type: Differential
Number of Inputs: 2
Supplier Device Package: 48-TQFP (7x7)
Architecture: Pipelined
Ratio - S/H:ADC: 1:1
Number of A/D Converters: 1
Produkt ist nicht verfügbar
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SMP100LC-120 en.CD00002051.pdf
SMP100LC-120
Hersteller: STMicroelectronics
Description: THYRISTOR 120V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 150V
Voltage - Off State: 120V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-140 en.CD00002051.pdf
SMP100LC-140
Hersteller: STMicroelectronics
Description: THYRISTOR 140V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 65pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 175V
Voltage - Off State: 140V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 2110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.24 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 9
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SMP100LC-160 en.CD00002051.pdf
SMP100LC-160
Hersteller: STMicroelectronics
Description: THYRISTOR 160V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 65pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 200V
Voltage - Off State: 160V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
17+1.08 EUR
100+0.75 EUR
500+0.63 EUR
1000+0.53 EUR
Mindestbestellmenge: 15
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SMP100LC-200 en.CD00002051.pdf
SMP100LC-200
Hersteller: STMicroelectronics
Description: THYRISTOR 200V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 250V
Voltage - Off State: 200V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 5025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
15+1.25 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 9
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SMP100LC-230 en.CD00002051.pdf
SMP100LC-230
Hersteller: STMicroelectronics
Description: THYRISTOR 230V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 285V
Voltage - Off State: 230V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.20 EUR
100+0.79 EUR
500+0.61 EUR
Mindestbestellmenge: 10
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SMP100LC-270 en.CD00002051.pdf
SMP100LC-270
Hersteller: STMicroelectronics
Description: THYRISTOR 270V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 335V
Voltage - Off State: 270V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 5353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.21 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 10
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SMP100LC-35 en.CD00002051.pdf
SMP100LC-35
Hersteller: STMicroelectronics
Description: THYRISTOR 35V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 55pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 55V
Voltage - Off State: 35V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 6879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.20 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 10
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SMP100LC-360 en.CD00002051.pdf
SMP100LC-360
Hersteller: STMicroelectronics
Description: THYRISTOR 360V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 50pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 450V
Voltage - Off State: 360V
Supplier Device Package: SMB
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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SMP100LC-400 en.CD00002051.pdf
SMP100LC-400
Hersteller: STMicroelectronics
Description: THYRISTOR 400V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 45pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 530V
Voltage - Off State: 400V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
100+1.09 EUR
Mindestbestellmenge: 7
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SMP100LC-65 en.CD00002051.pdf
SMP100LC-65
Hersteller: STMicroelectronics
Description: THYRISTOR 65V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 85V
Voltage - Off State: 65V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 6376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
15+1.25 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 9
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SMP100LC-90 en.CD00002051.pdf
SMP100LC-90
Hersteller: STMicroelectronics
Description: THYRISTOR 90V 400A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 125V
Voltage - Off State: 90V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 9642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
10+1.87 EUR
100+1.46 EUR
500+1.20 EUR
1000+0.95 EUR
Mindestbestellmenge: 9
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STB16PF06LT4 en.CD00043972.pdf
STB16PF06LT4
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Produkt ist nicht verfügbar
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STD100NH02LT4 STD100NH02L.pdf
STD100NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3940 pF @ 15 V
Produkt ist nicht verfügbar
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STD30NF06LT4 STD30NF06L.pdf
STD30NF06LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 3418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
11+1.71 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.91 EUR
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STD3NK60ZT4 en.CD00003099.pdf
STD3NK60ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 2.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
auf Bestellung 6426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
11+1.71 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.94 EUR
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STD4NK50ZT4 en.CD00003100.pdf
STD4NK50ZT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
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STD95NH02LT4 en.CD00042750.pdf
STD95NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
Produkt ist nicht verfügbar
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STGB10NB37LZT4 en.CD00002226.pdf
STGB10NB37LZT4
Hersteller: STMicroelectronics
Description: IGBT 440V 20A 125W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
auf Bestellung 707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.13 EUR
10+5.40 EUR
100+3.85 EUR
500+3.65 EUR
Mindestbestellmenge: 3
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STGB7NC60HDT4 en.CD00003695.pdf
STGB7NC60HDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 25A 80W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 80 W
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.35 EUR
100+2.32 EUR
Mindestbestellmenge: 4
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STGD3NB60SDT4 STGD3NB60SD.pdf
STGD3NB60SDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 125µs/-
Switching Energy: 1.15mJ (off)
Test Condition: 480V, 3A, 1kOhm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 48 W
auf Bestellung 3747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 8
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STGD7NC60HT4 stgd7nc60ht4.pdf
STGD7NC60HT4
Hersteller: STMicroelectronics
Description: IGBT 600V 25A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 18.5ns/72ns
Switching Energy: 95µJ (on), 115µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 70 W
auf Bestellung 9872 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.72 EUR
10+3.73 EUR
100+2.60 EUR
500+2.11 EUR
1000+1.96 EUR
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STL50NH3LL en.CD00041562.pdf
STL50NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 27A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 25 V
Produkt ist nicht verfügbar
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STL8NH3LL CD00041561.pdf
STL8NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 8A PWRFLAT3.3SQ
auf Bestellung 27092 Stücke:
Lieferzeit 10-14 Tag (e)
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STS10PF30L STS10PF30L.pdf
STS10PF30L
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
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STS11NF30L STS11NF30L.pdf
STS11NF30L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Produkt ist nicht verfügbar
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STS12NH3LL en.CD00005077.pdf
STS12NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 6A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 25 V
Produkt ist nicht verfügbar
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