Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (50362) > Seite 839 nach 840
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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TSM180P03CS RLG | TAIWAN SEMICONDUCTOR |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.3A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 14.6nC Kind of package: tape |
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SMAJ15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
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| TSM3N90CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK Mounting: THT Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK On-state resistance: 5.1Ω Power dissipation: 94W Gate charge: 17nC Polarisation: unipolar Drain current: 1.6A Kind of channel: enhancement Drain-source voltage: 900V |
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TSM3N90CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3 Mounting: THT Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220-3 On-state resistance: 5.1Ω Power dissipation: 94W Gate charge: 17nC Polarisation: unipolar Drain current: 1.6A Kind of channel: enhancement Drain-source voltage: 900V |
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| MUR340S | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Kind of package: reel; tape |
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MUR340SBH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
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| MUR340SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
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SMA6J30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMA6J |
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SMA6J15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 16.7V; 25.4A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 25.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMA6J |
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SMA6J10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 11.1V; 38.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 38.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMA6J |
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P4SMA39A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
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P4SMA39AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; unidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA Application: automotive industry |
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SMBJ54A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 60÷66.3V; 7.2A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 7.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
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BZT52C13 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 889 Stücke: Lieferzeit 14-21 Tag (e) |
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| TESDL3V3U1051M5 RKG | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS Type of diode: TVS |
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Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SMCJ170A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 189÷209V; 5.7A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 5.7A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Tolerance: ±5% |
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1SMA200Z | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1.25W; 200V; SMD; DO214AC,SMA; single diode Type of diode: Zener Case: DO214AC; SMA Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Zener voltage: 200V Tolerance: ±5% Power dissipation: 1.25W |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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1KSMB18CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1kW; 17.1V; 39.2A; bidirectional; SMB; 1KSMB Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1V Max. forward impulse current: 39.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Manufacturer series: 1KSMB |
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BZX55C51 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 51V; DO35; single diode; tape Mounting: THT Tolerance: ±5% Case: DO35 Zener voltage: 51V Type of diode: Zener Power dissipation: 0.5W Kind of package: tape Semiconductor structure: single diode |
auf Bestellung 1075 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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S1KLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; SOD123W; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SOD123W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
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Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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S1K-TSC | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 40A Kind of package: reel; tape Capacitance: 12pF Features of semiconductor devices: glass passivated |
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S1KAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; thinSMA; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.1V Kind of package: reel; tape |
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S1KALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; thinSMA; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry |
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S1KBH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; SMB; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry |
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S1KFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; SOD128; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.1V Kind of package: reel; tape |
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S1KFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; SOD128; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry |
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S1KH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 1.5us; SMA; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Kind of package: reel; tape Capacitance: 12pF Features of semiconductor devices: glass passivated Application: automotive industry |
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S1KLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; SOD123W; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SOD123W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
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BZT52B7V5S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 7.5V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Mounting: SMD Tolerance: ±2% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 360 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MBRF10H100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 950mV Type of diode: Schottky rectifying Case: ITO220AB Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V Kind of package: tube |
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MBR10L100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 850mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Kind of package: tube |
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| MBRF10L100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 850mV Type of diode: Schottky rectifying Case: ITO220AB Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Kind of package: tube |
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TS5205CX525 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23-5; SMD Mounting: SMD Output current: 0.15A Type of integrated circuit: voltage regulator Voltage drop: 0.275V Operating temperature: -40...125°C Output voltage: 2.5V Case: SOT23-5 Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Input voltage: 2.5...16V Manufacturer series: TS5205 |
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| TS40P06G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 40A Max. forward impulse current: 0.4kA Version: flat Case: TS-6P Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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| MBRAD5200H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 200V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.88V Application: automotive industry Kind of package: reel; tape |
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BZT52B15S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape |
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| TSCDF20065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; ITO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube |
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| TESD5V0L1UC RJG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.1kW Max. off-state voltage: 5V Breakdown voltage: 6...9.8V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape |
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BZW04-376B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Max. off-state voltage: 376V Breakdown voltage: 418V Semiconductor structure: bidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: BZW04 Max. forward impulse current: 0.67A |
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| TSM60NE285CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK Case: IPAK Mounting: THT Power dissipation: 139W Gate charge: 22nC Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube On-state resistance: 0.285Ω |
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| TSM60NE285CIT C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.5A; 56W; ITO220AB Case: ITO220AB Mounting: THT Power dissipation: 56W Gate charge: 22nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube On-state resistance: 0.285Ω |
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SMBJ6V0A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 61A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Manufacturer series: SMBJ |
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SMA4S60AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128 Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 1µA Case: SOD128 Type of diode: TVS Tolerance: ±5% Mounting: SMD Breakdown voltage: 67.1...74.1V Manufacturer series: SMA4S Max. forward impulse current: 4.1A |
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TSM042N03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Mounting: SMD Case: SOP8 Power dissipation: 7W Gate charge: 24nC Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tape On-state resistance: 6mΩ |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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TS3480CX33 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD Mounting: SMD Tolerance: ±2% Case: SOT23 Manufacturer series: TS3480 Type of integrated circuit: voltage regulator Voltage drop: 1.1V Operating temperature: -40...125°C Output voltage: 3.3V Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Input voltage: 4.8...30V Output current: 0.1A |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2JA | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape |
auf Bestellung 7028 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1AL R2 | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Case: subSMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE16CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 67A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Kind of package: reel; tape |
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Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMB39A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P6SMB39A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TS40P05G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 40A; Ifsm: 400A Case: TS-6P Kind of package: tube Leads: flat pin Max. off-state voltage: 0.6kV Electrical mounting: THT Load current: 40A Type of bridge rectifier: single-phase Max. forward impulse current: 0.4kA Max. forward voltage: 1.1V Version: flat Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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P4KE6.8CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.46V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
Produkt ist nicht verfügbar |
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SMCJ10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 92A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 92A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
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SMAJ40A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
Produkt ist nicht verfügbar |
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| DBL104G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DIP Case: DBL Max. forward impulse current: 40A Max. forward voltage: 1.1V Version: DIP Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 1A Kind of package: tube Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| HDBL104G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DIP Case: DBL Max. forward impulse current: 50A Max. forward voltage: 1.3V Version: DIP Features of semiconductor devices: glass passivated Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 1A Kind of package: tube Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MBRF30200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 1.05V Max. forward impulse current: 200A Kind of package: tube |
Produkt ist nicht verfügbar |
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SS24MH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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1N4007G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 10pF Max. forward impulse current: 30A Case: DO41 Kind of package: reel; tape Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MBR1660 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 0.75V Max. off-state voltage: 60V Load current: 16A Kind of package: tube Semiconductor structure: single diode Case: TO220AC Type of diode: Schottky rectifying |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TSM180P03CS RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14.6nC
Kind of package: tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 14.6nC
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ15CA |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TSM3N90CH C5G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| TSM3N90CZ C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 5.1Ω
Power dissipation: 94W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 900V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MUR340S |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MUR340SBH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| MUR340SH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| SMA6J30A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Produkt ist nicht verfügbar
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| SMA6J15A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.4A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Produkt ist nicht verfügbar
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| SMA6J10A |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1V; 38.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 38.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1V; 38.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 38.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Produkt ist nicht verfügbar
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| P4SMA39A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Produkt ist nicht verfügbar
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| P4SMA39AH |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; unidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Application: automotive industry
Produkt ist nicht verfügbar
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| SMBJ54A |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 7.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 7.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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| BZT52C13 RHG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 889 Stücke:
Lieferzeit 14-21 Tag (e)
| TESDL3V3U1051M5 RKG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SMCJ170A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.7A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.7A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Tolerance: ±5%
Produkt ist nicht verfügbar
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| 1SMA200Z |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 200V; SMD; DO214AC,SMA; single diode
Type of diode: Zener
Case: DO214AC; SMA
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Zener voltage: 200V
Tolerance: ±5%
Power dissipation: 1.25W
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 200V; SMD; DO214AC,SMA; single diode
Type of diode: Zener
Case: DO214AC; SMA
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Zener voltage: 200V
Tolerance: ±5%
Power dissipation: 1.25W
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
| 1KSMB18CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 17.1V; 39.2A; bidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Max. forward impulse current: 39.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: 1KSMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 17.1V; 39.2A; bidirectional; SMB; 1KSMB
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Max. forward impulse current: 39.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Manufacturer series: 1KSMB
Produkt ist nicht verfügbar
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| BZX55C51 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 51V; DO35; single diode; tape
Mounting: THT
Tolerance: ±5%
Case: DO35
Zener voltage: 51V
Type of diode: Zener
Power dissipation: 0.5W
Kind of package: tape
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 51V; DO35; single diode; tape
Mounting: THT
Tolerance: ±5%
Case: DO35
Zener voltage: 51V
Type of diode: Zener
Power dissipation: 0.5W
Kind of package: tape
Semiconductor structure: single diode
auf Bestellung 1075 Stücke:
Lieferzeit 14-21 Tag (e)
| S1KLW |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SOD123W; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SOD123W; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| S1K-TSC |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Capacitance: 12pF
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Capacitance: 12pF
Features of semiconductor devices: glass passivated
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| S1KAL |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; thinSMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; thinSMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
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| S1KALH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; thinSMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; thinSMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
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| S1KBH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMB; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMB; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| S1KFS |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SOD128; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SOD128; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S1KFSH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SOD128; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SOD128; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| S1KH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.5us; SMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 12pF
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.5us; SMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 12pF
Features of semiconductor devices: glass passivated
Application: automotive industry
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| S1KLWH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SOD123W; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SOD123W; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| BZT52B7V5S RRG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRF10H100CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MBR10L100CT |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRF10L100CT |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 850mV
Type of diode: Schottky rectifying
Case: ITO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Kind of package: tube
Produkt ist nicht verfügbar
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| TS5205CX525 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23-5; SMD
Mounting: SMD
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.275V
Operating temperature: -40...125°C
Output voltage: 2.5V
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...16V
Manufacturer series: TS5205
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23-5; SMD
Mounting: SMD
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.275V
Operating temperature: -40...125°C
Output voltage: 2.5V
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...16V
Manufacturer series: TS5205
Produkt ist nicht verfügbar
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| TS40P06G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.4kA
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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| MBRAD5200H |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.88V
Application: automotive industry
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.88V
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BZT52B15S RRG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| TSCDF20065G1 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Produkt ist nicht verfügbar
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| TESD5V0L1UC RJG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 5V
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 5V
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BZW04-376B |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: BZW04
Max. forward impulse current: 0.67A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: BZW04
Max. forward impulse current: 0.67A
Produkt ist nicht verfügbar
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| TSM60NE285CH C5G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Case: IPAK
Mounting: THT
Power dissipation: 139W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.285Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Case: IPAK
Mounting: THT
Power dissipation: 139W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.285Ω
Produkt ist nicht verfügbar
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| TSM60NE285CIT C0G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.5A; 56W; ITO220AB
Case: ITO220AB
Mounting: THT
Power dissipation: 56W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.285Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.5A; 56W; ITO220AB
Case: ITO220AB
Mounting: THT
Power dissipation: 56W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.285Ω
Produkt ist nicht verfügbar
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| SMBJ6V0A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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| SMA4S60AH |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD128
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 67.1...74.1V
Manufacturer series: SMA4S
Max. forward impulse current: 4.1A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SOD128
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOD128
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 67.1...74.1V
Manufacturer series: SMA4S
Max. forward impulse current: 4.1A
Produkt ist nicht verfügbar
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| TSM042N03CS RLG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Mounting: SMD
Case: SOP8
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
On-state resistance: 6mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Mounting: SMD
Case: SOP8
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
On-state resistance: 6mΩ
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| TS3480CX33 RFG |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Manufacturer series: TS3480
Type of integrated circuit: voltage regulator
Voltage drop: 1.1V
Operating temperature: -40...125°C
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 4.8...30V
Output current: 0.1A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Manufacturer series: TS3480
Type of integrated circuit: voltage regulator
Voltage drop: 1.1V
Operating temperature: -40...125°C
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 4.8...30V
Output current: 0.1A
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| ES2JA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
auf Bestellung 7028 Stücke:
Lieferzeit 14-21 Tag (e)
| RS1AL R2 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE16CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: reel; tape
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| P6SMB39A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
| P6SMB39A M4G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| TS40P05G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 40A; Ifsm: 400A
Case: TS-6P
Kind of package: tube
Leads: flat pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 40A
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 40A; Ifsm: 400A
Case: TS-6P
Kind of package: tube
Leads: flat pin
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Load current: 40A
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: flat
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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| P4KE6.8CA |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ10A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 92A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 92A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 92A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 92A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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| SMAJ40A |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Produkt ist nicht verfügbar
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| DBL104G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DIP
Case: DBL
Max. forward impulse current: 40A
Max. forward voltage: 1.1V
Version: DIP
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 1A
Kind of package: tube
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DIP
Case: DBL
Max. forward impulse current: 40A
Max. forward voltage: 1.1V
Version: DIP
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 1A
Kind of package: tube
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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| HDBL104G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DIP
Case: DBL
Max. forward impulse current: 50A
Max. forward voltage: 1.3V
Version: DIP
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 1A
Kind of package: tube
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DIP
Case: DBL
Max. forward impulse current: 50A
Max. forward voltage: 1.3V
Version: DIP
Features of semiconductor devices: glass passivated
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 1A
Kind of package: tube
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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| MBRF30200CT |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 1.05V
Max. forward impulse current: 200A
Kind of package: tube
Produkt ist nicht verfügbar
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| SS24MH |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| 1N4007G |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| MBR1660 |
|
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. off-state voltage: 60V
Load current: 16A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. off-state voltage: 60V
Load current: 16A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: Schottky rectifying
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)