Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 18 nach 217
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SA1930(Q,M) | Toshiba Semiconductor and Storage |
 Description: TRANS PNP 180V 2A TO220NISPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-220NIS Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 180 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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2SC2705-O(TE6,F,M) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 150V 0.05A TO92MOD Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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2SC2705-O(TPE6,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 150V 0.05A TO92MOD Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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2SC3074-O(Q) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 5A PW-MOLD Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Frequency - Transition: 120MHz Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2SC3074-Y(Q) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 5A PW-MOLD Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Frequency - Transition: 120MHz Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2SC4409(TE12L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 2A PW-MINI |
Produkt ist nicht verfügbar |
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2SC5171(Q,M) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 180V 2A TO220NIS |
Produkt ist nicht verfügbar |
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2SC5439(F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 450V 8A TO220NIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V Supplier Device Package: TO-220NIS Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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2SD1407A-Y(F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 100V 5A TO220NIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V Frequency - Transition: 12MHz Supplier Device Package: TO-220NIS Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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2SD2406-Y(F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 80V 4A TO220NIS |
Produkt ist nicht verfügbar |
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2SK2266(TE24R,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 45A TO220SM Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220SM Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V |
Produkt ist nicht verfügbar |
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.JPG "2SK2376(Q)") |
2SK2376(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 45A TO220FL Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220FL Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3301(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 900V 1A PW-MOLD |
Produkt ist nicht verfügbar |
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2SK3309(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 450V 10A TO220FL Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3309(TE24L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 450V 10A TO220SM Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220SM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V |
Produkt ist nicht verfügbar |
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| CLH05(TE16L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 5A LFLAT |
Produkt ist nicht verfügbar |
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| CLH07(TE16L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 5A LFLAT |
Produkt ist nicht verfügbar |
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| CLS01(TE16L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 10A LFLAT |
Produkt ist nicht verfügbar |
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| CLS02(TE16L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 10A LFLAT |
Produkt ist nicht verfügbar |
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| CLS03(TE16L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A LFLAT |
Produkt ist nicht verfügbar |
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| CMC02(TE12L,Q) | Toshiba Semiconductor and Storage | Description: DIODE GEN PURP 400V 1A MFLAT |
Produkt ist nicht verfügbar |
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| CMF01(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 600V 2A MFLAT |
Produkt ist nicht verfügbar |
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| CMF02(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 600V 1A MFLAT |
Produkt ist nicht verfügbar |
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| CMF03(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 900V 500MA MFLAT |
Produkt ist nicht verfügbar |
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| CMG02(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 2A MFLAT |
Produkt ist nicht verfügbar |
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| CMG03(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 600V 1A MFLAT |
Produkt ist nicht verfügbar |
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| CMH01(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 3A MFLAT |
Produkt ist nicht verfügbar |
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| CMH02A(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 3A MFLAT |
Produkt ist nicht verfügbar |
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| CMH02(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 3A MFLAT |
Produkt ist nicht verfügbar |
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| CMH04(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 1A MFLAT |
Produkt ist nicht verfügbar |
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| CMH05(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 1A MFLAT |
Produkt ist nicht verfügbar |
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| CMH07(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 2A MFLAT |
Produkt ist nicht verfügbar |
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.jpg "CMH08(TE12L,Q)") |
CMH08(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 2A MFLAT |
Produkt ist nicht verfügbar |
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| CMS14(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 2A MFLAT |
Produkt ist nicht verfügbar |
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| CMS15(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 3A MFLAT |
Produkt ist nicht verfügbar |
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| CMS17(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 2A MFLAT |
Produkt ist nicht verfügbar |
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| CMZ12(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 12V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ13(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 13V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ15(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 15V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ16(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 16V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ18(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 18V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ20(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 20V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ22(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 22V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ24(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 24V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ27(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 27V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ30(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 30V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ33(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 33V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ36(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 36V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ39(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 39V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ43(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 43V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ47(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 47V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ51(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 51V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZ53(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 53V 2W MFLAT |
Produkt ist nicht verfügbar |
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| CMZB18(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 18V 1W MFLAT |
Produkt ist nicht verfügbar |
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| CMZB27(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 27V 1W MFLAT |
Produkt ist nicht verfügbar |
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| CMZB33(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 33V 1W MFLAT |
Produkt ist nicht verfügbar |
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| CMZB36(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 36V 1W MFLAT |
Produkt ist nicht verfügbar |
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| CMZB39(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 39V 1W MFLAT |
Produkt ist nicht verfügbar |
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| CMZB47(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 47V 1W MFLAT |
Produkt ist nicht verfügbar |
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| CMZB51(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 51V 1W MFLAT |
Produkt ist nicht verfügbar |
| 2SA1930(Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 180V 2A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
Description: TRANS PNP 180V 2A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
Produkt ist nicht verfügbar
| 2SC2705-O(TE6,F,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| 2SC2705-O(TPE6,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| 2SC3074-O(Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 5A PW-MOLD
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 5A PW-MOLD
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
| 2SC3074-Y(Q) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 5A PW-MOLD
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 5A PW-MOLD
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
| 2SC4409(TE12L,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A PW-MINI
Description: TRANS NPN 50V 2A PW-MINI
Produkt ist nicht verfügbar
| 2SC5171(Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 180V 2A TO220NIS
Description: TRANS NPN 180V 2A TO220NIS
Produkt ist nicht verfügbar
| 2SC5439(F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 450V 8A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 2 W
Description: TRANS NPN 450V 8A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 2 W
Produkt ist nicht verfügbar
| 2SD1407A-Y(F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 5A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Frequency - Transition: 12MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 30 W
Description: TRANS NPN 100V 5A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Frequency - Transition: 12MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 30 W
Produkt ist nicht verfügbar
| 2SD2406-Y(F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 4A TO220NIS
Description: TRANS NPN 80V 4A TO220NIS
Produkt ist nicht verfügbar
| 2SK2266(TE24R,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 45A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Description: MOSFET N-CH 60V 45A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Produkt ist nicht verfügbar
| 2SK2376(Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 45A TO220FL
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220FL
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
Description: MOSFET N-CH 60V 45A TO220FL
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220FL
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
Produkt ist nicht verfügbar
| 2SK3301(TE16L1,NQ) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 1A PW-MOLD
Description: MOSFET N-CH 900V 1A PW-MOLD
Produkt ist nicht verfügbar
| 2SK3309(Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 10A TO220FL
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V
Description: MOSFET N-CH 450V 10A TO220FL
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V
Produkt ist nicht verfügbar
| 2SK3309(TE24L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 10A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V
Description: MOSFET N-CH 450V 10A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V
Produkt ist nicht verfügbar
| CLH05(TE16L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 5A LFLAT
Description: DIODE GEN PURP 200V 5A LFLAT
Produkt ist nicht verfügbar
| CLH07(TE16L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 5A LFLAT
Description: DIODE GEN PURP 400V 5A LFLAT
Produkt ist nicht verfügbar
| CLS01(TE16L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 10A LFLAT
Description: DIODE SCHOTTKY 30V 10A LFLAT
Produkt ist nicht verfügbar
| CLS02(TE16L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 10A LFLAT
Description: DIODE SCHOTTKY 40V 10A LFLAT
Produkt ist nicht verfügbar
| CLS03(TE16L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A LFLAT
Description: DIODE SCHOTTKY 60V 10A LFLAT
Produkt ist nicht verfügbar
| CMC02(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A MFLAT
Description: DIODE GEN PURP 400V 1A MFLAT
Produkt ist nicht verfügbar
| CMF01(TE12L,Q,M) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 2A MFLAT
Description: DIODE GEN PURP 600V 2A MFLAT
Produkt ist nicht verfügbar
| CMF02(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 1A MFLAT
Description: DIODE GEN PURP 600V 1A MFLAT
Produkt ist nicht verfügbar
| CMF03(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 900V 500MA MFLAT
Description: DIODE GEN PURP 900V 500MA MFLAT
Produkt ist nicht verfügbar
| CMG02(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 2A MFLAT
Description: DIODE GEN PURP 400V 2A MFLAT
Produkt ist nicht verfügbar
| CMG03(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 1A MFLAT
Description: DIODE GEN PURP 600V 1A MFLAT
Produkt ist nicht verfügbar
| CMH01(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 3A MFLAT
Description: DIODE GEN PURP 200V 3A MFLAT
Produkt ist nicht verfügbar
| CMH02A(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 3A MFLAT
Description: DIODE GEN PURP 400V 3A MFLAT
Produkt ist nicht verfügbar
| CMH02(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 3A MFLAT
Description: DIODE GEN PURP 400V 3A MFLAT
Produkt ist nicht verfügbar
| CMH04(TE12L,Q,M) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 1A MFLAT
Description: DIODE GEN PURP 200V 1A MFLAT
Produkt ist nicht verfügbar
| CMH05(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A MFLAT
Description: DIODE GEN PURP 400V 1A MFLAT
Produkt ist nicht verfügbar
| CMH07(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 2A MFLAT
Description: DIODE GEN PURP 200V 2A MFLAT
Produkt ist nicht verfügbar
| CMH08(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 2A MFLAT
Description: DIODE GEN PURP 400V 2A MFLAT
Produkt ist nicht verfügbar
| CMS14(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A MFLAT
Description: DIODE SCHOTTKY 60V 2A MFLAT
Produkt ist nicht verfügbar
| CMS15(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 3A MFLAT
Description: DIODE SCHOTTKY 60V 3A MFLAT
Produkt ist nicht verfügbar
| CMS17(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A MFLAT
Description: DIODE SCHOTTKY 30V 2A MFLAT
Produkt ist nicht verfügbar
| CMZ12(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 2W MFLAT
Description: DIODE ZENER 12V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ13(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 2W MFLAT
Description: DIODE ZENER 13V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ15(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 15V 2W MFLAT
Description: DIODE ZENER 15V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ16(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 16V 2W MFLAT
Description: DIODE ZENER 16V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ18(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 2W MFLAT
Description: DIODE ZENER 18V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ20(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 20V 2W MFLAT
Description: DIODE ZENER 20V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ22(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 22V 2W MFLAT
Description: DIODE ZENER 22V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ24(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 24V 2W MFLAT
Description: DIODE ZENER 24V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ27(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 27V 2W MFLAT
Description: DIODE ZENER 27V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ30(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 30V 2W MFLAT
Description: DIODE ZENER 30V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ33(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 33V 2W MFLAT
Description: DIODE ZENER 33V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ36(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 36V 2W MFLAT
Description: DIODE ZENER 36V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ39(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 39V 2W MFLAT
Description: DIODE ZENER 39V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ43(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 43V 2W MFLAT
Description: DIODE ZENER 43V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ47(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 47V 2W MFLAT
Description: DIODE ZENER 47V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ51(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 51V 2W MFLAT
Description: DIODE ZENER 51V 2W MFLAT
Produkt ist nicht verfügbar
| CMZ53(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 53V 2W MFLAT
Description: DIODE ZENER 53V 2W MFLAT
Produkt ist nicht verfügbar
| CMZB18(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 1W MFLAT
Description: DIODE ZENER 18V 1W MFLAT
Produkt ist nicht verfügbar
| CMZB27(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 27V 1W MFLAT
Description: DIODE ZENER 27V 1W MFLAT
Produkt ist nicht verfügbar
| CMZB33(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 33V 1W MFLAT
Description: DIODE ZENER 33V 1W MFLAT
Produkt ist nicht verfügbar
| CMZB36(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 36V 1W MFLAT
Description: DIODE ZENER 36V 1W MFLAT
Produkt ist nicht verfügbar
| CMZB39(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 39V 1W MFLAT
Description: DIODE ZENER 39V 1W MFLAT
Produkt ist nicht verfügbar
| CMZB47(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 47V 1W MFLAT
Description: DIODE ZENER 47V 1W MFLAT
Produkt ist nicht verfügbar
| CMZB51(TE12L,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 51V 1W MFLAT
Description: DIODE ZENER 51V 1W MFLAT
Produkt ist nicht verfügbar