Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13019) > Seite 20 nach 217

Wählen Sie Seite:   [  << Vorherige Seite ]  1 15 16 17 18 19 20 21 22 23 24 25 42 63 84 105 126 147 168 189 210 217  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
TPC8021-H(TE12LQ,M TPC8021-H(TE12LQ,M Toshiba Semiconductor and Storage TPC8021-H.pdf Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
TPC8022-H(TE12LQ,M TPC8022-H(TE12LQ,M Toshiba Semiconductor and Storage TPC8022-H.pdf Description: MOSFET N-CH 40V 7.5A 8SOP
Produkt ist nicht verfügbar
TPC8031-H(TE12LQM) TPC8031-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A 8SOP
Produkt ist nicht verfügbar
TPC8031-H(TE12L,Q) TPC8031-H(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8032-H(TE12LQM) TPC8032-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 15A 8SOP
Produkt ist nicht verfügbar
TPC8033-H(TE12LQM) TPC8033-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 17A 8SOP
Produkt ist nicht verfügbar
TPC8035-H(TE12L,QM TPC8035-H(TE12L,QM Toshiba Semiconductor and Storage docget.jsp?did=11517&prodName=TPC8035-H Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Produkt ist nicht verfügbar
TPC8037-H(TE12L,Q) TPC8037-H(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 12A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8038-H(TE12L,Q) TPC8038-H(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 12A 8SOP
Produkt ist nicht verfügbar
TPC8110(TE12L,Q,M) TPC8110(TE12L,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
Produkt ist nicht verfügbar
TPC8111(TE12L,Q,M) TPC8111(TE12L,Q,M) Toshiba Semiconductor and Storage TPC8111.pdf Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 10 V
Produkt ist nicht verfügbar
TPC8112(TE12L,Q) TPC8112(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=12266&prodName=TPC8112 Description: MOSFET P-CH 30V 13A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8113(TE12L,Q) TPC8113(TE12L,Q) Toshiba Semiconductor and Storage TPC8113.pdf Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 10 V
Produkt ist nicht verfügbar
TPC8115(TE12L,Q,M) TPC8115(TE12L,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 10 V
Produkt ist nicht verfügbar
TPC8117(TE12L,Q) TPC8117(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 30V 18A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8208(TE12L,Q,M) TPC8208(TE12L,Q,M) Toshiba Semiconductor and Storage TPC8208.pdf Description: MOSFET 2N-CH 20V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Produkt ist nicht verfügbar
TPC8405(TE12L,Q,M) TPC8405(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=1505&prodName=TPC8405 Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Produkt ist nicht verfügbar
TPC8A02-H(TE12L,Q) TPC8A02-H(TE12L,Q) Toshiba Semiconductor and Storage TPC8A02-H.pdf Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 10 V
Produkt ist nicht verfügbar
TPC8A03-H(TE12LQM) TPC8A03-H(TE12LQM) Toshiba Semiconductor and Storage docget.jsp?did=11088&prodName=TPC8A03-H Description: MOSFET N-CH 30V 17A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8A04-H(TE12L,Q) TPC8A04-H(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=12227&prodName=TPC8A04-H Description: MOSFET N-CH 30V 18A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPCA8003-H(TE12LQM Toshiba Semiconductor and Storage TPCA8003-H.pdf Description: MOSFET N-CH 30V 35A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8005-H(TE12LQM Toshiba Semiconductor and Storage TPCA8005-H.pdf Description: MOSFET N-CH 30V 27A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8008-H(TE12LQM Toshiba Semiconductor and Storage TPCA8008-H.pdf Description: MOSFET N-CH 250V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8010-H(TE12LQM Toshiba Semiconductor and Storage TPCA8010-H_datasheet_en_20091221.pdf?did=7271&prodName=TPCA8010-H Description: MOSFET N-CH 200V 5.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8011-H(TE12LQM Toshiba Semiconductor and Storage TPCA8011-H.pdf Description: MOSFET N-CH 20V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8012-H(TE12LQM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3713 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8018-H(TE12LQM Toshiba Semiconductor and Storage TPCA8018-H.pdf Description: MOSFET N-CH 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8021-H(TE12LQM Toshiba Semiconductor and Storage TPCA8021-H.pdf Description: MOSFET N-CH 30V 27A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8023-H(TE12LQM Toshiba Semiconductor and Storage TPCA8023-H.pdf Description: MOSFET N-CH 30V 21A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8031-H(TE12L,Q Toshiba Semiconductor and Storage docget.jsp?did=11786&prodName=TPCA8031-H Description: MOSFET N-CH 30V 24A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8102(TE12L,Q,M Toshiba Semiconductor and Storage TPCA8102.pdf Description: MOSFET P-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8103(TE12L,Q,M Toshiba Semiconductor and Storage TPCA8103.pdf Description: MOSFET P-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8104(TE12L,Q,M TPCA8104(TE12L,Q,M Toshiba Semiconductor and Storage docget.jsp?did=5971&prodName=TPCA8104 Description: MOSFET P-CH 60V 40A SOP-8 ADV
Produkt ist nicht verfügbar
TPCA8105(TE12L,Q,M Toshiba Semiconductor and Storage TPCA8105.pdf Description: MOSFET P-CH 12V 6A SOP-8 ADV
Produkt ist nicht verfügbar
TPCA8107-H(TE12LQM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 40V 7.5A SOP-8 ADV
Produkt ist nicht verfügbar
TPCA8A01-H(TE12L,Q Toshiba Semiconductor and Storage TPCA8A01-H.pdf Description: MOSFET N-CH 30V 36A SOP8 ADV
Produkt ist nicht verfügbar
TPCF8102(TE85L,F,M Toshiba Semiconductor and Storage TPCF8102.pdf Description: MOSFET P-CH 20V 6A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-8 (2.9x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 10 V
Produkt ist nicht verfügbar
TPCF8304(TE85L,F,M TPCF8304(TE85L,F,M Toshiba Semiconductor and Storage TPCF8304.pdf Description: MOSFET 2P-CH 30V 3.2A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: VS-8 (2.9x1.5)
Produkt ist nicht verfügbar
TPCP8001-H(TE85LFM Toshiba Semiconductor and Storage TPCM8001-H.pdf Description: MOSFET N-CH 30V 7.2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
TPCP8201(TE85L,F) Toshiba Semiconductor and Storage TPCP8201.pdf Description: MOSFET 2N-CH 30V 4.2A PS-8
Produkt ist nicht verfügbar
TPCP8203(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 40V 4.7A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Produkt ist nicht verfügbar
TPCP8302(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?pid=TPCP8302&lang=en&type=datasheet Description: MOSFET 2P-CH 20V 5A PS-8
Produkt ist nicht verfügbar
TPCP8401(TE85L,F) Toshiba Semiconductor and Storage TPCP8401.pdf Description: MOSFET N/P-CH 20V/12V PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: PS-8 (2.9x2.4)
Produkt ist nicht verfügbar
TPCP8402(TE85L,F) Toshiba Semiconductor and Storage TPCP8402.pdf Description: MOSFET N/P-CH 30V 4.2A/3.4A PS-8
Produkt ist nicht verfügbar
TPCP8J01(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=1332&prodName=TPCP8J01 Description: MOSFET NPN/P-CH 32V PS-8
Produkt ist nicht verfügbar
1SS315TPH3F 1SS315TPH3F Toshiba Semiconductor and Storage Description: RF DIODE SCHOTTKY 5V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: USC
Current - Max: 30 mA
Produkt ist nicht verfügbar
1SS381,L3F 1SS381,L3F Toshiba Semiconductor and Storage 1SV323FTR.jpg Description: DIODE RF SWITCH 30V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 100 mA
Produkt ist nicht verfügbar
1SV262TPH3F 1SV262TPH3F Toshiba Semiconductor and Storage 1SV262.pdf Description: DIODE VARICAP 34V USC
Produkt ist nicht verfügbar
1SV270TPH3F 1SV270TPH3F Toshiba Semiconductor and Storage 1SV270_datasheet_en_20141222.pdf?did=2782&prodName=1SV270 Description: DIODE VARICAP VCO UHF USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2
auf Bestellung 5990 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.24 EUR
Mindestbestellmenge: 3000
1SV277TPH3F 1SV277TPH3F Toshiba Semiconductor and Storage 1SV277_datasheet_en_20140301.pdf?did=2789&prodName=1SV277 Description: DIODE VARICAP VCO UHF USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
Produkt ist nicht verfügbar
1SV324TPH3F 1SV324TPH3F Toshiba Semiconductor and Storage 1SV324_datasheet_en_20140301.pdf?did=2856&prodName=1SV324 Description: DIODE TCXO/VCO 10V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.24 EUR
Mindestbestellmenge: 3000
2SA1163-GR,LF 2SA1163-GR,LF Toshiba Semiconductor and Storage 2SA1163_datasheet_en_20220302.pdf?did=19353&prodName=2SA1163 Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.12 EUR
6000+ 0.11 EUR
9000+ 0.091 EUR
Mindestbestellmenge: 3000
CRZ20(TE85R,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 20V 700MW SFLAT
Produkt ist nicht verfügbar
TA75S01F,LF TA75S01F,LF Toshiba Semiconductor and Storage TA75S01F_datasheet_en_20171003.pdf?did=20983&prodName=TA75S01F Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Gain Bandwidth Product: 300 kHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: SMV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 12 V
Produkt ist nicht verfügbar
TA75S393F,LF TA75S393F,LF Toshiba Semiconductor and Storage TA75S393F_datasheet_en_20220525.pdf?did=20981&prodName=TA75S393F Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: CMOS, DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SMV
Current - Quiescent (Max): 800µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 144000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.33 EUR
6000+ 0.31 EUR
15000+ 0.29 EUR
30000+ 0.27 EUR
75000+ 0.26 EUR
Mindestbestellmenge: 3000
TA75S558F,LF TA75S558F,LF Toshiba Semiconductor and Storage docget.jsp?did=20987&prodName=TA75S558F Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: SMV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
TA75W393FU,LF TA75W393FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20989&prodName=TA75W393FU Description: IC COMPARATOR DUAL SSOP8
Produkt ist nicht verfügbar
TA75W558FU,LF TA75W558FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20993&prodName=TA75W558FU Description: IC OPAMP GP 2 CIRCUIT SM8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TC4S11FT5LFT TC4S11FT5LFT Toshiba Semiconductor and Storage TC4S11F.pdf Description: IC GATE NAND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC4S30FT5LFT TC4S30FT5LFT Toshiba Semiconductor and Storage Description: IC GATE XOR 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
TPC8021-H(TE12LQ,M TPC8021-H.pdf
TPC8021-H(TE12LQ,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
TPC8022-H(TE12LQ,M TPC8022-H.pdf
TPC8022-H(TE12LQ,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 7.5A 8SOP
Produkt ist nicht verfügbar
TPC8031-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8031-H(TE12LQM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Produkt ist nicht verfügbar
TPC8031-H(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8031-H(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8032-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8032-H(TE12LQM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 8SOP
Produkt ist nicht verfügbar
TPC8033-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8033-H(TE12LQM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 17A 8SOP
Produkt ist nicht verfügbar
TPC8035-H(TE12L,QM docget.jsp?did=11517&prodName=TPC8035-H
TPC8035-H(TE12L,QM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Produkt ist nicht verfügbar
TPC8037-H(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8037-H(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 12A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8038-H(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8038-H(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 12A 8SOP
Produkt ist nicht verfügbar
TPC8110(TE12L,Q,M) Mosfets_Prod_Guide.pdf
TPC8110(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
Produkt ist nicht verfügbar
TPC8111(TE12L,Q,M) TPC8111.pdf
TPC8111(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 10 V
Produkt ist nicht verfügbar
TPC8112(TE12L,Q) docget.jsp?did=12266&prodName=TPC8112
TPC8112(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 13A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8113(TE12L,Q) TPC8113.pdf
TPC8113(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 10 V
Produkt ist nicht verfügbar
TPC8115(TE12L,Q,M) Mosfets_Prod_Guide.pdf
TPC8115(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 10 V
Produkt ist nicht verfügbar
TPC8117(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8117(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8208(TE12L,Q,M) TPC8208.pdf
TPC8208(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Produkt ist nicht verfügbar
TPC8405(TE12L,Q,M) docget.jsp?did=1505&prodName=TPC8405
TPC8405(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Produkt ist nicht verfügbar
TPC8A02-H(TE12L,Q) TPC8A02-H.pdf
TPC8A02-H(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 10 V
Produkt ist nicht verfügbar
TPC8A03-H(TE12LQM) docget.jsp?did=11088&prodName=TPC8A03-H
TPC8A03-H(TE12LQM)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 17A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPC8A04-H(TE12L,Q) docget.jsp?did=12227&prodName=TPC8A04-H
TPC8A04-H(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A SOP8 2-6J1B
Produkt ist nicht verfügbar
TPCA8003-H(TE12LQM TPCA8003-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 35A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8005-H(TE12LQM TPCA8005-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 27A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8008-H(TE12LQM TPCA8008-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8010-H(TE12LQM TPCA8010-H_datasheet_en_20091221.pdf?did=7271&prodName=TPCA8010-H
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 5.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8011-H(TE12LQM TPCA8011-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8012-H(TE12LQM Mosfets_Prod_Guide.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3713 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8018-H(TE12LQM TPCA8018-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8021-H(TE12LQM TPCA8021-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 27A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8023-H(TE12LQM TPCA8023-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 21A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8031-H(TE12L,Q docget.jsp?did=11786&prodName=TPCA8031-H
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 24A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8102(TE12L,Q,M TPCA8102.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8103(TE12L,Q,M TPCA8103.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 10 V
Produkt ist nicht verfügbar
TPCA8104(TE12L,Q,M docget.jsp?did=5971&prodName=TPCA8104
TPCA8104(TE12L,Q,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 40A SOP-8 ADV
Produkt ist nicht verfügbar
TPCA8105(TE12L,Q,M TPCA8105.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOP-8 ADV
Produkt ist nicht verfügbar
TPCA8107-H(TE12LQM Mosfets_Prod_Guide.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 7.5A SOP-8 ADV
Produkt ist nicht verfügbar
TPCA8A01-H(TE12L,Q TPCA8A01-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 36A SOP8 ADV
Produkt ist nicht verfügbar
TPCF8102(TE85L,F,M TPCF8102.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-8 (2.9x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 10 V
Produkt ist nicht verfügbar
TPCF8304(TE85L,F,M TPCF8304.pdf
TPCF8304(TE85L,F,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 3.2A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: VS-8 (2.9x1.5)
Produkt ist nicht verfügbar
TPCP8001-H(TE85LFM TPCM8001-H.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 7.2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
TPCP8201(TE85L,F) TPCP8201.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4.2A PS-8
Produkt ist nicht verfügbar
TPCP8203(TE85L,F) Mosfets_Prod_Guide.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 40V 4.7A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Produkt ist nicht verfügbar
TPCP8302(TE85L,F) docget.jsp?pid=TPCP8302&lang=en&type=datasheet
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 5A PS-8
Produkt ist nicht verfügbar
TPCP8401(TE85L,F) TPCP8401.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V/12V PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: PS-8 (2.9x2.4)
Produkt ist nicht verfügbar
TPCP8402(TE85L,F) TPCP8402.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 4.2A/3.4A PS-8
Produkt ist nicht verfügbar
TPCP8J01(TE85L,F) docget.jsp?did=1332&prodName=TPCP8J01
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET NPN/P-CH 32V PS-8
Produkt ist nicht verfügbar
1SS315TPH3F
1SS315TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 5V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: USC
Current - Max: 30 mA
Produkt ist nicht verfügbar
1SS381,L3F 1SV323FTR.jpg
1SS381,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE RF SWITCH 30V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 100 mA
Produkt ist nicht verfügbar
1SV262TPH3F 1SV262.pdf
1SV262TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARICAP 34V USC
Produkt ist nicht verfügbar
1SV270TPH3F 1SV270_datasheet_en_20141222.pdf?did=2782&prodName=1SV270
1SV270TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARICAP VCO UHF USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2
auf Bestellung 5990 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
Mindestbestellmenge: 3000
1SV277TPH3F 1SV277_datasheet_en_20140301.pdf?did=2789&prodName=1SV277
1SV277TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARICAP VCO UHF USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
Produkt ist nicht verfügbar
1SV324TPH3F 1SV324_datasheet_en_20140301.pdf?did=2856&prodName=1SV324
1SV324TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE TCXO/VCO 10V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
Mindestbestellmenge: 3000
2SA1163-GR,LF 2SA1163_datasheet_en_20220302.pdf?did=19353&prodName=2SA1163
2SA1163-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
6000+ 0.11 EUR
9000+ 0.091 EUR
Mindestbestellmenge: 3000
CRZ20(TE85R,Q,M) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 20V 700MW SFLAT
Produkt ist nicht verfügbar
TA75S01F,LF TA75S01F_datasheet_en_20171003.pdf?did=20983&prodName=TA75S01F
TA75S01F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Gain Bandwidth Product: 300 kHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: SMV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 12 V
Produkt ist nicht verfügbar
TA75S393F,LF TA75S393F_datasheet_en_20220525.pdf?did=20981&prodName=TA75S393F
TA75S393F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: CMOS, DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SMV
Current - Quiescent (Max): 800µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
auf Bestellung 144000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.33 EUR
6000+ 0.31 EUR
15000+ 0.29 EUR
30000+ 0.27 EUR
75000+ 0.26 EUR
Mindestbestellmenge: 3000
TA75S558F,LF docget.jsp?did=20987&prodName=TA75S558F
TA75S558F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: SMV
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
TA75W393FU,LF docget.jsp?did=20989&prodName=TA75W393FU
TA75W393FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR DUAL SSOP8
Produkt ist nicht verfügbar
TA75W558FU,LF docget.jsp?did=20993&prodName=TA75W558FU
TA75W558FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 2 CIRCUIT SM8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
TC4S11FT5LFT TC4S11F.pdf
TC4S11FT5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Produkt ist nicht verfügbar
TC4S30FT5LFT
TC4S30FT5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 15 16 17 18 19 20 21 22 23 24 25 42 63 84 105 126 147 168 189 210 217  [ Nächste Seite >> ]