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Hersteller: UMW
Description: SOT-23-3 POWER MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V

Hersteller: UMW
Description: SOT-23-3 POWER MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V

Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 12V; 85mOhm; 2,6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3403 Alpha&Omega Semiconductor AOS; AO3403A TAO3403a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
MOSFET N-CH 30V SOT-23 Транзистори

Hersteller: UMW
MOSFET P-CH 30V 4.3A SOT-23-3 Транзистори

Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 87mOhm; 4,1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3407A Alpha&Omega Semiconductor AOS AO3407A TAO3407a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 87mOhm; 4,1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3407A Alpha&Omega Semiconductor AOS AO3407A TAO3407a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
Description: 30V 2.6A 130MR@10V,2.6A 1.4W 3V@
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V

Hersteller: UMW
Description: 30V 2.6A 130MR@10V,2.6A 1.4W 3V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V

Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 200mOhm; 2,6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3409 Alpha&Omega Semiconductor AOS; AO3409A TAO3409a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 200mOhm; 2,6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3409 Alpha&Omega Semiconductor AOS; AO3409A TAO3409a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
Description: SOT-23-3 POWER MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 10 V

Hersteller: UMW
Description: SOT-23-3 POWER MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 10 V

Hersteller: UMW
Transistor P-Channel MOSFET; 20V; 8V; 80mOhm; 3A; 1,4W; -55°C ~ 150°C; Equivalent: AO3413 Alpha&Omega Semiconductor AOS; AO3413A TAO3413a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
Description: 20V 4.2A 400MW 35MR@4.5V,3.6A 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V

Hersteller: UMW
Description: 20V 4.2A 400MW 35MR@4.5V,3.6A 1.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V

Hersteller: UMW
Transistor N-Channel MOSFET; 20V; 8V; 57mOhm; 4,2A; 1,4W; -55°C ~ 150°C; Equivalent: AO3414 Alpha&Omega Semiconductor AOS; AO3414A TAO3414a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
MOSFET P-CH 20V 4 A SOT23 Транзистори

Hersteller: UMW
Transistor P-Channel MOSFET; 20V; 8V; 60mOhm; 4A; 0,35W; -55°C ~ 150°C; Equivalent: AO3415A Alpha&Omega Semiconductor AOS; AO3415A TAO3415a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
Description: 20V 6.5A 22MR@4.5V,6.5A 1.4W 1.1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V

Hersteller: UMW
Description: 20V 6.5A 22MR@4.5V,6.5A 1.4W 1.1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V

Hersteller: UMW
MOSFET N-CH 20V 6.5A SOT23-3L Транзистори

Hersteller: UMW
Transistor N-Channel MOSFET; 20V; 8V; 51mOhm; 6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3416 Alpha&Omega Semiconductor AOS; AO3416A TAO3416a UMW
Anzahl je Verpackung: 250 Stücke

Hersteller: UMW
Transistor N-Channel MOSFET; 60V; 20V; 125mOhm; 2,1A; 1,25W; -55°C ~ 150°C; Equivalent: AO3422 Alpha&Omega Semiconductor AOS; AO3422A TAO3422a UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Description: SOT-23 POWER MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 4.5 V

Hersteller: UMW
Description: SOT-23 POWER MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 4.5 V

Hersteller: UMW
Transistor P-Channel MOSFET; 20V; 12V; 150mOhm; 2A; 1,4W; -55°C ~ 150°C; Equivalent: AO3423 Alpha&Omega Semiconductor AOS; AO3423A TAO3423a UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Transistor N-Channel MOSFET; 100V; 20V; 1,2Ohm; 1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3442 Alpha&Omega Semiconductor AOS; AO3442A TAO3442a UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Transistor N-Channel MOSFET; 100V; 20V; 1,2Ohm; 1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3442 Alpha&Omega Semiconductor AOS; AO3442A TAO3442a UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V

Hersteller: UMW
MOSFET P-CH 30V 12A 8SOIC Транзистори

Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 25V; 18,5mOhm; 14A; 3,1W; -55°C ~ 150°C; Equivalent: AO4407A Alpha&Omega Semiconductor AOS; AO4407A TAO4407a UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V

Hersteller: UMW
Description: MOSFET P-CH 30V 15A 8SOIC

Hersteller: UMW
Description: MOSFET P-CH 30V 15A 8SOIC

Hersteller: UMW
Description: MOSFET P-CH 60V 6.2A 8SOIC

Hersteller: UMW
Description: MOSFET P-CH 60V 6.2A 8SOIC

Hersteller: UMW
Transistor P-Channel MOSFET; 60V; 20V; 50mOhm; 6,2A; 3,1W; -55°C ~ 150°C; Equivalent: AO4421 Alpha&Omega Semiconductor AOS; AO4421 TAO4421 UMW
Anzahl je Verpackung: 25 Stücke

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V

Hersteller: UMW
Transistor P-Channel MOSFET; 60V; 20V; 130mOhm; 4A; 3,1W; -55°C ~ 150°C; Equivalent: AO4441 Alpha&Omega Semiconductor AOS; AO4441 TAO4441 UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Description: MOSFET P-CH 30V 17A 8SOIC

Hersteller: UMW
Description: MOSFET P-CH 30V 17A 8SOIC

Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; Equivalent: AO4447A Alpha&Omega Semiconductor AOS; AO4447A TAO4447a UMW
Anzahl je Verpackung: 25 Stücke

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V

Hersteller: UMW
Transistor N-Channel MOSFET; 30V; 20V; 23mOhm; 10,5A; 3,1W; -55°C ~ 150°C; Equivalent: AO4468 Alpha&Omega Semiconductor AOS; AO4468 TAO4468 UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Transistor P-Channel MOSFET; 40V; 20V; 20mOhm; 10A; 1,7W; -55°C ~ 150°C; Equivalent: AO4485 Alpha&Omega Semiconductor AOS; AO4485 TAO4485 UMW
Anzahl je Verpackung: 60 Stücke

Hersteller: UMW
Transistor P-Channel MOSFET; 40V; 20V; 20mOhm; 10A; 1,7W; -55°C ~ 150°C; Equivalent: AO4485 Alpha&Omega Semiconductor AOS; AO4485 TAO4485 UMW
Anzahl je Verpackung: 50 Stücke

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V

Hersteller: UMW
Description: SOP-8 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 50 V

Hersteller: UMW
Transistor N/P-Channel MOSFET; 40V; 20V; 38mOhm/50mOhm; 6A/5A; 2W; -55°C ~ 150°C; Equivalent: AO4614B Alpha&Omega Semiconductor AOS; AO4614 TAO4614 UMW
Anzahl je Verpackung: 100 Stücke

Hersteller: UMW
Description: MOSFET 2N-CH 40V 8A 8SOIC

Hersteller: UMW
Description: MOSFET 2N-CH 40V 8A 8SOIC

Hersteller: UMW
Transistor 2xN-Channel MOSFET; 40V; 20V; 16mOhm; 10A; 2W; -55°C ~ 150°C; Equivalent: AO4884 Alpha&Omega Semiconductor AOS; AO4884 TAO4884 UMW
Anzahl je Verpackung: 50 Stücke

Hersteller: UMW
Transistor N/P-Channel MOSFET; 20V; 8V; 100mOhm/115mOhm; 3,4A/2,5A; 1,1W; -55°C ~ 150°C; Equivalent: AO6604 Alpha&Omega Semiconductor AOS; AO6604 TAO6604 UMW
Anzahl je Verpackung: 100 Stücke