Die Produkte vishay general semiconductor - diodes division

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1.5KE120CAHE3/51 1.5KE120CAHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 102VWM 165VC 1.5KE
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Bidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 102V
Current - Peak Pulse (10/1000µs): 9.1A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Part Status: Obsolete
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10PJ-M3/84A SE10PJ-M3/84A se10pb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO220AA
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE10
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Lieferzeit 21-28 Tag (e)
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SE15PG-M3/84A SE15PG-M3/84A se15pj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO220AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE15
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Lieferzeit 21-28 Tag (e)
SE15PD-M3/84A SE15PD-M3/84A se15pj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1.5A DO220AA
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 900ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SE15
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
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VS-2EFH02-M3/I VS-2EFH02-M3/I vs-2efh02-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO219AB
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-16EDH02-M3/I VS-16EDH02-M3/I vs-16edh02-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 16A TO263AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 15µA @ 200V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 16EDH02
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 16A TO263AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 15µA @ 200V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 16EDH02
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Lieferzeit 21-28 Tag (e)
VS-16EDH02HM3/I VS-16EDH02HM3/I vs-16edh02hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 16A TO263AC
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 16EDH02
Supplier Device Package: TO-263AC (SMPD)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 15µA @ 200V
Reverse Recovery Time (trr): 32ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
Current - Average Rectified (Io): 16A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
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VS-80EBU04 VS-80EBU04 vs-80ebu04.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 80A POWIRTAB
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: PowIRtab™
Current - Average Rectified (Io): 80A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: PowerTab™, PowIRtab™
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5241B-TAP 1N5241B-TAP 1n5221.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 11V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 22 Ohms
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Voltage - Zener (Nom) (Vz): 11 V
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Lieferzeit 21-28 Tag (e)
VSSA210-M3/5AT VSSA210-M3/5AT vssa210.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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VS-1EFH01-M3/I VS-1EFH01-M3/I vs-1efh01-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A SMF
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1EFH01
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 100V
Reverse Recovery Time (trr): 16ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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VS-4ESH01-M3/86A VS-4ESH01-M3/86A vs-4esh01-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 4A TO277A
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 4A TO277A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
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VS-6ESH01-M3/86A VS-6ESH01-M3/86A vs-6esh01-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 6A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 6ESH01
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 6A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 6ESH01
auf Bestellung 839 Stücke
Lieferzeit 21-28 Tag (e)
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VS-6ESH06-M3/86A VS-6ESH06-M3/86A vs-6esh06-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 6A TO277A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SM6T30CAHE3_A/I SM6T30CAHE3_A/I sm6t.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 25.6VWM 41.5VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 41.5V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 14.5A
Applications: Automotive
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-6ESH01HM3/86A VS-6ESH01HM3/86A vs-6esh01hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 6A TO277A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -60°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 22 ns
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
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VS-16EDU06-M3/I VS-16EDU06-M3/I vs-16edu06-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A TO263AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 200V
Base Part Number: 16EDU06
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A TO263AC
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 16EDU06
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VS-16EDU06HM3/I VS-16EDU06HM3/I vs-16edu06hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 16A TO263AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 16EDU06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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MURS160-M3/52T MURS160-M3/52T murs140.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214AA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-6ESU06-M3/86A VS-6ESU06-M3/86A vs-6esu06-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 6A TO277A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 58 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 6A TO277A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 58 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 835 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1109 Stücke - Preis und Lieferfrist anzeigen
16+ 1.66 EUR
18+ 1.48 EUR
100+ 1.13 EUR
500+ 0.9 EUR
SE10PD-M3/84A SE10PD-M3/84A se10pb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO220AA
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE10
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Lieferzeit 21-28 Tag (e)
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SE15PB-M3/84A SE15PB-M3/84A se15pj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1.5A DO220AA
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE15
auf Bestellung 5900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3035 Stücke - Preis und Lieferfrist anzeigen
VS-1EFH02HM3/I VS-1EFH02HM3/I vs-1efh02hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO219AB
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17334 Stücke - Preis und Lieferfrist anzeigen
VS-2EFH02HM3/I VS-2EFH02HM3/I vs-2efh02hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO219AB
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO219AB
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
auf Bestellung 5313 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.07 EUR
29+ 0.92 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.42 EUR
2000+ 0.38 EUR
5000+ 0.37 EUR
VS-4ESH01HM3/86A VS-4ESH01HM3/86A vs-4esh01hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 4A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 4ESH01
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V8PAL45HM3_A/I V8PAL45HM3_A/I v8pal45.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 4A DO221BC
Base Part Number: V8PAL45
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1.85mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 430mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 27400 Stücke - Preis und Lieferfrist anzeigen
VS-6ESH06HM3/86A VS-6ESH06HM3/86A vs-6esh06hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 6A TO277A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
1500+ 0.93 EUR
3000+ 0.87 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 6A TO277A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.18 EUR
14+ 1.92 EUR
100+ 1.47 EUR
500+ 1.17 EUR
V40DL45BP-M3/I V40DL45BP-M3/I v40dl45bp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 40A TO263AC
Base Part Number: V40DL45
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AC (SMPD)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 660mV @ 40A
Current - Average Rectified (Io): 40A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 40A TO263AC
Base Part Number: V40DL45
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 660mV @ 40A
Current - Average Rectified (Io): 40A
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
auf Bestellung 4384 Stücke
Lieferzeit 21-28 Tag (e)
V35PWM12-M3/I V35PWM12-M3/I v35pwm12.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 120V 35A SLIMDPAK
Base Part Number: V35PWM12
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2080pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1.2mA @ 120V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 120V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 2300 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 120V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: V35PWM12
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2080pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1.2mA @ 120V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 120V
Diode Type: Schottky
Part Status: Active
auf Bestellung 2300 Stücke
Lieferzeit 21-28 Tag (e)
VIT5202-M3/4W VIT5202-M3/4W vt5202-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 5A TO262AA
Base Part Number: VIT5202
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-262AA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 150µA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 2990 Stücke
Lieferzeit 21-28 Tag (e)
SD103AWS-HG3-08 SD103AWS-HG3-08 sd103aws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA (DC)
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SD103BWS-HG3-08 SD103BWS-HG3-08 sd103aws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 350MA SOD323
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Reverse Recovery Time (trr): 10 ns
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 350mA (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SD103AWS-HG3-18 SD103AWS-HG3-18 sd103aws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA (DC)
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SD103BWS-HG3-18 SD103BWS-HG3-18 sd103aws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 350MA SOD323
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 350mA (DC)
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRA140-M3/5AT VS-MBRA140-M3/5AT Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A SMA
Current - Reverse Leakage @ Vr: 100µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MBRA140
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FG-M3/H SE10FG-M3/H se10fd-se10fg-se10fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO219AB
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FG-M3/I SE10FG-M3/I se10fd-se10fg-se10fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE15FG-M3/H SE15FG-M3/H se15fd-se15fg-se15fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO219AB
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 900 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE15FG-M3/I SE15FG-M3/I se15fd-se15fg-se15fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 900 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS1F4-M3/I SS1F4-M3/I ss1f4.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO219AB
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SS1F4
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2PH6-M3/85A SS2PH6-M3/85A ss2ph5.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FGHM3/H SE10FGHM3/H se10fd-se10fg-se10fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO219AB
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FGHM3/I SE10FGHM3/I se10fd-se10fg-se10fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO219AB
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FJHM3/I SE10FJHM3/I se10fd-se10fg-se10fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO219AB
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Operating Temperature - Junction: -55°C ~ 175°C
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-1EFH01HM3/I VS-1EFH01HM3/I vs-1efh01hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A SMF
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1EFH01
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 100V
Reverse Recovery Time (trr): 16ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S1AFK-M3/6A S1AFK-M3/6A s1afg.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO221AC
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S1A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S1AFK-M3/6B S1AFK-M3/6B s1afg.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO221AC
Base Part Number: S1A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 1.47µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S1AFM-M3/6B S1AFM-M3/6B s1afg.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO221AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.47µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE15FGHM3/H SE15FGHM3/H se15fd-se15fg-se15fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO219AB
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 900 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE15FGHM3/I SE15FGHM3/I se15fd-se15fg-se15fj.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2PH5HM3/84A SS2PH5HM3/84A ss2ph5.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2PH6HM3/84A SS2PH6HM3/84A ss2ph5.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS1F4HM3/I SS1F4HM3/I ss1f4.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO219AB
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 175°C (Max)
Base Part Number: SS1F4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-2EFH01-M3/I VS-2EFH01-M3/I vs-2efh01-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO219AB
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 2EFH01
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 100V
Reverse Recovery Time (trr): 24ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10MQ040HM3/5AT VS-10MQ040HM3/5AT vs-10mq040hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO214AC
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20MQ060HM3/5AT VS-20MQ060HM3/5AT vs-20mq060hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 2A DO214AC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 690mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 20MQ060
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10MQ100HM3/5AT VS-10MQ100HM3/5AT vs-10mq100hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-1EFH02-M3/I VS-1EFH02-M3/I vs-1efh02-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A SMF
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-2EFH01HM3/I VS-2EFH01HM3/I vs-2efh01hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO219AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 2EFH01
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S2MHE3_A/I S2MHE3_A/I s2a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1.5A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-10BQ030-M3/5BT VS-10BQ030-M3/5BT vs-10bq030-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 2842 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS130L-M3/5BT VS-MBRS130L-M3/5BT vsmbrs130lm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A SMB
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-MBRS130-M3/5BT VS-MBRS130-M3/5BT vs-mbrs130-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Current - Reverse Leakage @ Vr: 1mA @ 30V
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Current - Average Rectified (Io): 1A
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRS140-M3/5BT VS-MBRS140-M3/5BT vsmbrs140m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-MBRS1100-M3/5BT VS-MBRS1100-M3/5BT vsmbrs190m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Capacitance @ Vr, F: 42pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS190-M3/5BT VS-MBRS190-M3/5BT vsmbrs190m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 90V 1A SMB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMB (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 42pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 90V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VSSA210HM3_A/I VSSA210HM3_A/I vssa210.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VSSAF3N50-M3/6B VSSAF3N50-M3/6B vssaf3n50.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 2.7A DO221AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: 570pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4001GPE-E3/91 1n4001gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
AS3BJ-M3/52T AS3BJ-M3/52T as3bd.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13737 Stücke - Preis und Lieferfrist anzeigen
750+ 0.54 EUR
1500+ 0.42 EUR
2250+ 0.38 EUR
5250+ 0.37 EUR
VSSAF3N50-M3/6A VSSAF3N50-M3/6A vssaf3n50.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 2.7A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 570pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A (DC)
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-10BQ040HM3/5BT VS-10BQ040HM3/5BT vs-10bq040hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10BQ060HM3/5BT VS-10BQ060HM3/5BT vs-10bq060hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15MQ040HM3/5AT VS-15MQ040HM3/5AT vs-15mq040hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 22500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 32276 Stücke - Preis und Lieferfrist anzeigen
7500+ 0.36 EUR
15000+ 0.34 EUR
VS-10BQ015HM3/5BT VS-10BQ015HM3/5BT vs-10bq015hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 15V 1A DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 390pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 330 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZG05C9V1-HE3-TR BZG05C9V1-HE3-TR BZG05C_Series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 9.1V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Obsolete
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10BQ100HM3/5BT VS-10BQ100HM3/5BT vs-10bq100hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1A DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2AHM3/5BT ES2AHM3/5BT es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20BQ030HM3/5BT VS-20BQ030HM3/5BT vs-20bq030hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 2A DO214AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Bulk
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 20BQ030
auf Bestellung 898 Stücke
Lieferzeit 21-28 Tag (e)
VS-10BQ030HM3/5BT VS-10BQ030HM3/5BT vs-10bq030hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-3EJH02-M3/6A VS-3EJH02-M3/6A vs-3ejh02-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO221AC
Base Part Number: 3EJH02
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 200V
Reverse Recovery Time (trr): 18ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURS240HE3_A/H MURS240HE3_A/H murs240.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 2A DO214AA
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURS240HE3_A/I MURS240HE3_A/I murs240.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5KE120CAHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE120CAHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 102VWM 165VC 1.5KE
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Bidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 102V
Current - Peak Pulse (10/1000µs): 9.1A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Part Status: Obsolete
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10PJ-M3/84A se10pb.pdf
SE10PJ-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO220AA
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE10
auf Bestellung 5485 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15031 Stücke - Preis und Lieferfrist anzeigen
SE15PG-M3/84A se15pj.pdf
SE15PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO220AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE15
auf Bestellung 265 Stücke
Lieferzeit 21-28 Tag (e)
SE15PD-M3/84A se15pj.pdf
SE15PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO220AA
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 900ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SE15
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
auf Bestellung 5150 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11920 Stücke - Preis und Lieferfrist anzeigen
VS-2EFH02-M3/I vs-2efh02-m3.pdf
VS-2EFH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO219AB
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-16EDH02-M3/I vs-16edh02-m3.pdf
VS-16EDH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 15µA @ 200V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 16EDH02
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
VS-16EDH02-M3/I vs-16edh02-m3.pdf
VS-16EDH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 15µA @ 200V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 16EDH02
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
VS-16EDH02HM3/I vs-16edh02hm3.pdf
VS-16EDH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AC
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: 16EDH02
Supplier Device Package: TO-263AC (SMPD)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 15µA @ 200V
Reverse Recovery Time (trr): 32ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
Current - Average Rectified (Io): 16A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1710 Stücke - Preis und Lieferfrist anzeigen
VS-80EBU04 vs-80ebu04.pdf
VS-80EBU04
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 80A POWIRTAB
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: PowIRtab™
Current - Average Rectified (Io): 80A
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Chassis Mount
Package / Case: PowerTab™, PowIRtab™
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5241B-TAP 1n5221.pdf
1N5241B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 22 Ohms
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Voltage - Zener (Nom) (Vz): 11 V
auf Bestellung 5529 Stücke
Lieferzeit 21-28 Tag (e)
VSSA210-M3/5AT vssa210.pdf
VSSA210-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.7A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 9005 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
VS-1EFH01-M3/I vs-1efh01-m3.pdf
VS-1EFH01-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A SMF
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1EFH01
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 100V
Reverse Recovery Time (trr): 16ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-4ESH01-M3/86A vs-4esh01-m3.pdf
VS-4ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1498 Stücke - Preis und Lieferfrist anzeigen
VS-4ESH01-M3/86A vs-4esh01-m3.pdf
VS-4ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Current - Average Rectified (Io): 4A
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1494 Stücke - Preis und Lieferfrist anzeigen
VS-6ESH01-M3/86A vs-6esh01-m3.pdf
VS-6ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 6ESH01
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1879 Stücke - Preis und Lieferfrist anzeigen
VS-6ESH01-M3/86A vs-6esh01-m3.pdf
VS-6ESH01-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 6ESH01
auf Bestellung 839 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1040 Stücke - Preis und Lieferfrist anzeigen
VS-6ESH06-M3/86A vs-6esh06-m3.pdf
VS-6ESH06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SM6T30CAHE3_A/I sm6t.pdf
SM6T30CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.5VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 41.5V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 14.5A
Applications: Automotive
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-6ESH01HM3/86A vs-6esh01hm3.pdf
VS-6ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -60°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 22 ns
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-16EDU06-M3/I vs-16edu06-m3.pdf
VS-16EDU06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A TO263AC
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 200V
Base Part Number: 16EDU06
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-16EDU06-M3/I vs-16edu06-m3.pdf
VS-16EDU06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A TO263AC
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 16EDU06
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Lieferzeit 21-28 Tag (e)
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VS-16EDU06HM3/I vs-16edu06hm3.pdf
VS-16EDU06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: 16EDU06
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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MURS160-M3/52T murs140.pdf
MURS160-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-6ESU06-M3/86A vs-6esu06-m3.pdf
VS-6ESU06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 58 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-6ESU06-M3/86A vs-6esu06-m3.pdf
VS-6ESU06-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 58 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 835 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1109 Stücke - Preis und Lieferfrist anzeigen
16+ 1.66 EUR
18+ 1.48 EUR
100+ 1.13 EUR
500+ 0.9 EUR
SE10PD-M3/84A se10pb.pdf
SE10PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE10
auf Bestellung 10325 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15050 Stücke - Preis und Lieferfrist anzeigen
SE15PB-M3/84A se15pj.pdf
SE15PB-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO220AA
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE15
auf Bestellung 5900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3035 Stücke - Preis und Lieferfrist anzeigen
VS-1EFH02HM3/I vs-1efh02hm3.pdf
VS-1EFH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO219AB
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-2EFH02HM3/I vs-2efh02hm3.pdf
VS-2EFH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO219AB
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-2EFH02HM3/I vs-2efh02hm3.pdf
VS-2EFH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO219AB
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
auf Bestellung 5313 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.07 EUR
29+ 0.92 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.42 EUR
2000+ 0.38 EUR
5000+ 0.37 EUR
VS-4ESH01HM3/86A vs-4esh01hm3.pdf
VS-4ESH01HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 4ESH01
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V8PAL45HM3_A/I v8pal45.pdf
V8PAL45HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 4A DO221BC
Base Part Number: V8PAL45
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-221BC (SMPA)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1.85mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 430mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-6ESH06HM3/86A vs-6esh06hm3.pdf
VS-6ESH06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4500 Stücke - Preis und Lieferfrist anzeigen
1500+ 0.93 EUR
3000+ 0.87 EUR
VS-6ESH06HM3/86A vs-6esh06hm3.pdf
VS-6ESH06HM3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 6A
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
12+ 2.18 EUR
14+ 1.92 EUR
100+ 1.47 EUR
500+ 1.17 EUR
V40DL45BP-M3/I v40dl45bp.pdf
V40DL45BP-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Base Part Number: V40DL45
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AC (SMPD)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 660mV @ 40A
Current - Average Rectified (Io): 40A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4384 Stücke - Preis und Lieferfrist anzeigen
V40DL45BP-M3/I v40dl45bp.pdf
V40DL45BP-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Base Part Number: V40DL45
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 660mV @ 40A
Current - Average Rectified (Io): 40A
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
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Lieferzeit 21-28 Tag (e)
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
V35PWM12-M3/I v35pwm12.pdf
V35PWM12-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 35A SLIMDPAK
Base Part Number: V35PWM12
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2080pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1.2mA @ 120V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 120V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 2300 Stücke
Lieferzeit 21-28 Tag (e)
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V35PWM12-M3/I v35pwm12.pdf
V35PWM12-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: V35PWM12
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2080pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1.2mA @ 120V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 120V
Diode Type: Schottky
Part Status: Active
auf Bestellung 2300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
VIT5202-M3/4W vt5202-m3.pdf
VIT5202-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 5A TO262AA
Base Part Number: VIT5202
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-262AA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 150µA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 2990 Stücke
Lieferzeit 21-28 Tag (e)
SD103AWS-HG3-08 sd103aws.pdf
SD103AWS-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA (DC)
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SD103BWS-HG3-08 sd103aws.pdf
SD103BWS-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 350MA SOD323
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Reverse Recovery Time (trr): 10 ns
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 350mA (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SD103AWS-HG3-18 sd103aws.pdf
SD103AWS-HG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA (DC)
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SD103BWS-HG3-18 sd103aws.pdf
SD103BWS-HG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 350MA SOD323
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 350mA (DC)
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRA140-M3/5AT
VS-MBRA140-M3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A SMA
Current - Reverse Leakage @ Vr: 100µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MBRA140
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FG-M3/H se10fd-se10fg-se10fj.pdf
SE10FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FG-M3/I se10fd-se10fg-se10fj.pdf
SE10FG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE15FG-M3/H se15fd-se15fg-se15fj.pdf
SE15FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO219AB
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 900 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE15FG-M3/I se15fd-se15fg-se15fj.pdf
SE15FG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 900 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS1F4-M3/I ss1f4.pdf
SS1F4-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO219AB
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SS1F4
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2PH6-M3/85A ss2ph5.pdf
SS2PH6-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FGHM3/H se10fd-se10fg-se10fj.pdf
SE10FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FGHM3/I se10fd-se10fg-se10fj.pdf
SE10FGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE10FJHM3/I se10fd-se10fg-se10fj.pdf
SE10FJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Operating Temperature - Junction: -55°C ~ 175°C
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-1EFH01HM3/I vs-1efh01hm3.pdf
VS-1EFH01HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A SMF
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1EFH01
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 100V
Reverse Recovery Time (trr): 16ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S1AFK-M3/6A s1afg.pdf
S1AFK-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO221AC
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S1A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S1AFK-M3/6B s1afg.pdf
S1AFK-M3/6B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO221AC
Base Part Number: S1A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 1.47µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S1AFM-M3/6B s1afg.pdf
S1AFM-M3/6B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO221AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.47µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE15FGHM3/H se15fd-se15fg-se15fj.pdf
SE15FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO219AB
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 900 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE15FGHM3/I se15fd-se15fg-se15fj.pdf
SE15FGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2PH5HM3/84A ss2ph5.pdf
SS2PH5HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2PH6HM3/84A ss2ph5.pdf
SS2PH6HM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS1F4HM3/I ss1f4.pdf
SS1F4HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO219AB
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 175°C (Max)
Base Part Number: SS1F4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-2EFH01-M3/I vs-2efh01-m3.pdf
VS-2EFH01-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO219AB
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 2EFH01
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 100V
Reverse Recovery Time (trr): 24ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10MQ040HM3/5AT vs-10mq040hm3.pdf
VS-10MQ040HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20MQ060HM3/5AT vs-20mq060hm3.pdf
VS-20MQ060HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 690mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 20MQ060
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10MQ100HM3/5AT vs-10mq100hm3.pdf
VS-10MQ100HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16822 Stücke - Preis und Lieferfrist anzeigen
VS-1EFH02-M3/I vs-1efh02-m3.pdf
VS-1EFH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A SMF
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 16 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-2EFH01HM3/I vs-2efh01hm3.pdf
VS-2EFH01HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO219AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 2EFH01
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S2MHE3_A/I s2a.pdf
S2MHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1852 Stücke - Preis und Lieferfrist anzeigen
VS-10BQ030-M3/5BT vs-10bq030-m3.pdf
VS-10BQ030-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2842 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS130L-M3/5BT vsmbrs130lm3.pdf
VS-MBRS130L-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A SMB
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3033 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS130-M3/5BT vs-mbrs130-m3.pdf
VS-MBRS130-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Current - Reverse Leakage @ Vr: 1mA @ 30V
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Current - Average Rectified (Io): 1A
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRS140-M3/5BT vsmbrs140m3.pdf
VS-MBRS140-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3253 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS1100-M3/5BT vsmbrs190m3.pdf
VS-MBRS1100-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Capacitance @ Vr, F: 42pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS190-M3/5BT vsmbrs190m3.pdf
VS-MBRS190-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A SMB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMB (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 42pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 90V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VSSA210HM3_A/I vssa210.pdf
VSSA210HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VSSAF3N50-M3/6B vssaf3n50.pdf
VSSAF3N50-M3/6B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2.7A DO221AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: 570pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4001GPE-E3/91 1n4001gp.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
AS3BJ-M3/52T as3bd.pdf
AS3BJ-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13737 Stücke - Preis und Lieferfrist anzeigen
750+ 0.54 EUR
1500+ 0.42 EUR
2250+ 0.38 EUR
5250+ 0.37 EUR
VSSAF3N50-M3/6A vssaf3n50.pdf
VSSAF3N50-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2.7A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 570pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A (DC)
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 340 Stücke - Preis und Lieferfrist anzeigen
VS-10BQ040HM3/5BT vs-10bq040hm3.pdf
VS-10BQ040HM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10BQ060HM3/5BT vs-10bq060hm3.pdf
VS-10BQ060HM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15MQ040HM3/5AT vs-15mq040hm3.pdf
VS-15MQ040HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 22500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 32276 Stücke - Preis und Lieferfrist anzeigen
7500+ 0.36 EUR
15000+ 0.34 EUR
VS-10BQ015HM3/5BT vs-10bq015hm3.pdf
VS-10BQ015HM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 1A DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 390pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 330 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZG05C9V1-HE3-TR BZG05C_Series.pdf
BZG05C9V1-HE3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Obsolete
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-10BQ100HM3/5BT vs-10bq100hm3.pdf
VS-10BQ100HM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AA
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2AHM3/5BT es2.pdf
ES2AHM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-20BQ030HM3/5BT vs-20bq030hm3.pdf
VS-20BQ030HM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Bulk
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 20BQ030
auf Bestellung 898 Stücke
Lieferzeit 21-28 Tag (e)
VS-10BQ030HM3/5BT vs-10bq030hm3.pdf
VS-10BQ030HM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-3EJH02-M3/6A vs-3ejh02-m3.pdf
VS-3EJH02-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO221AC
Base Part Number: 3EJH02
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2µA @ 200V
Reverse Recovery Time (trr): 18ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURS240HE3_A/H murs240.pdf
MURS240HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURS240HE3_A/I murs240.pdf
MURS240HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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