Die Produkte vishay general semiconductor - diodes division

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BZG03C10-HM3-08 BZG03C10-HM3-08 bzg03c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 10V 1.25W DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
Packaging: Cut Tape (CT)
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500+ 0.71 EUR
BZG03C180-HM3-08 BZG03C180-HM3-08 bzg03c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 180V 1.25W DO214AC
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 400 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
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3000+ 0.5 EUR
7500+ 0.48 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 180V 1.25W DO214AC
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 400 Ohms
Voltage - Zener (Nom) (Vz): 180 V
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BZG03C160-HM3-08 BZG03C160-HM3-08 bzg03c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 160V 1.25W DO214AC
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±4.06%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
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Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 160V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±4.06%
Packaging: Cut Tape (CT)
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BZG03C91-HM3-08 BZG03C91-HM3-08 bzg03c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 91V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
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Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 91V 1.25W DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
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BZG03C91-M3-08 BZG03C91-M3-08 bzg03c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 91V 1.25W DO214AC
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 91V 1.25W DO214AC
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Packaging: Cut Tape (CT)
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BZG03C82-M3-08 BZG03C82-M3-08 bzg03c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 82V 1.25W DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Current - Reverse Leakage @ Vr: 1µA @ 62V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 1.25W
Tolerance: ±6.1%
Voltage - Zener (Nom) (Vz): 82V
Part Status: Active
Packaging: Tape & Reel (TR)
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BZG03C11-HM3-08 BZG03C11-HM3-08 bzg03c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 11V 1.25W DO214AC
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
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Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 11V 1.25W DO214AC
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.45%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
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BZG03C16-HM3-08 BZG03C16-HM3-08 bzg03c-m-series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 16V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.63%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
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BZX84B12-E3-08 BZX84B12-E3-08 bzx84v.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 300MW SOT23-3
Packaging: Cut Tape (CT)
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
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SMBJ10A-E3/5B SMBJ10A-E3/5B smbj.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 10VWM 17VC DO214AA
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
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CS1M-E3/I CS1M-E3/I cs1dgjkm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GPP 1000V 1.0A DO-214AC
Base Part Number: CS1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
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SM8S15A-002HE3/2D SM8S15A-002HE3/2D SM8S10_thru_SM8S43A._Aug.31,2016.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 15VWM 24.4VC DO218AB
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 24.4V
Voltage - Breakdown (Min): 16.7V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 270A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Power Line Protection: No
Part Status: Obsolete
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GBU8M-7001E3/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 3.9 A
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
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GBU8ML-7001M3/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBU8ML-7014M3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 3.9 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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1N4743A-T 1N4728A-thru-1N4764A_Rev19-3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 13V 1.3W DO41
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 700 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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BAS70-06-HE3-08 BAS70-06-HE3-08 bas70.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 70V SOT23
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BAS70-06-HE3-18 BAS70-06-HE3-18 bas70.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 70V SOT23
Diode Type: Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 5 ns
Packaging: Cut Tape (CT)
Speed: Small Signal =< 200mA (Io), Any Speed
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BAS70-06-E3-18 BAS70-06-E3-18 bas70.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 70V SOT23
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 5 ns
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1N4761A-TAP 1N4761A-TAP 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 75V 1.3W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
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VS-8ETL06-1-M3 VS-8ETL06-1-M3 vs-8etl06s-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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BZD27B200P-M3-08 BZD27B200P-M3-08 bzd27b-mseries.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
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1N4746A-TAP 1N4746A-TAP 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 18V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Tolerance: ±5%
Packaging: Cut Tape (CT)
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ES2D-E3/5BT ES2D-E3/5BT es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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SMBJ28AHE3_A/I SMBJ28AHE3_A/I smbj.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 28VWM 45.5VC DO214AA
Voltage - Reverse Standoff (Typ): 28V
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.5V
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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GBU4K-5400M3/51 GBU4x-M3_ProdBundle_Aug5,2015.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBU
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU
Technology: Standard
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
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GBU4KL-6437E3/51 GBU4x_ProdBundle_Aug5,2015.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBU
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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GBU4KL-6437M3/51 GBU4x-M3_ProdBundle_Aug5,2015.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBU
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU4KL-7014M3/45 GBU4x-M3_ProdBundle_Aug5,2015.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBU
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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SMZG3788BHE3/5B smzg.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 9.1V 1.5W DO215AA
Current - Reverse Leakage @ Vr: 50 µA @ 7 V
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-215AA (SMBG)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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VS-8TQ100-M3 VS-8TQ100-M3 vs-8tq060-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 8A TO220AC
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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10+ 3.92 EUR
100+ 3.15 EUR
500+ 2.59 EUR
1000+ 2.22 EUR
3N258-E4/72 3N258-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Current - Reverse Leakage @ Vr: 5µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM
Base Part Number: 3N258
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UF5401-E3/73 UF5401-E3/73 uf5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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19+ 1.43 EUR
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VS-42CTQ030-M3 VS-42CTQ030-M3 vs-42ctq030-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 30V TO220AB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 30 V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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auf Bestellung 681 Stücke
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BYS10-35-E3/TR BYS10-35-E3/TR bys10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
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auf Bestellung 2001 Stücke
Lieferzeit 21-28 Tag (e)
BYS10-45HE3_A/I BYS10-45HE3_A/I bys10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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BYS10-35HE3_A/H BYS10-35HE3_A/H bys10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4686 Stücke
Lieferzeit 21-28 Tag (e)
BYS10-45HE3_A/H BYS10-45HE3_A/H bys10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Mounting Type: Surface Mount
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12600+ 0.2 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 1A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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34+ 0.77 EUR
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500+ 0.33 EUR
BYS11-90-E3/TR3 BYS11-90-E3/TR3 bys1190.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Lieferzeit 21-28 Tag (e)
BYS11-90-M3/TR BYS11-90-M3/TR bys11-90.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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auf Bestellung 6728 Stücke
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30+ 0.87 EUR
100+ 0.59 EUR
500+ 0.44 EUR
LL4148-M-08 LL4148-M-08 ll4148m.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 300MA SOD80
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
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500+ 0.16 EUR
1000+ 0.11 EUR
LL4148-M-18 LL4148-M-18 ll4148m.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 300MA SOD80
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
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PLZ5V1A-G3/H PLZ5V1A-G3/H plzseries.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.94V 960MW DO219AC
Package / Case: DO-219AC
Tolerance: ±2.63%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 4.94 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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4500+ 0.14 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.94V 960MW DO219AC
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 4.94 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±2.63%
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
35+ 0.75 EUR
42+ 0.63 EUR
100+ 0.34 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
2000+ 0.14 EUR
BYT52M-TAP BYT52M-TAP byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
BYT52J-TR BYT52J-TR byt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
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auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
VS-MBR1045-M3 VS-MBR1045-M3 vs-mbr1035-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 10A TO220AC
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
10+ 2.68 EUR
11+ 2.4 EUR
MBR1045-10HE3/45 MBR1045-10HE3/45 mbr10xx.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY ARRAY TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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VS-MBR2545CT-M3 VS-MBR2545CT-M3 vs-mbr2535_45ct-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 45V TO220AB
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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auf Bestellung 746 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.45 EUR
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100+ 3.09 EUR
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MBR2545CT-7HE3/45 MBR2545CT-7HE3/45 mbr25xxct.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY ARRAY TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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MBR2545CT801HE3/45 MBR2545CT801HE3/45 mbr25xxct.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY ARRAY TO220AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Package / Case: TO-220-3
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
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SMAJ36A-E3/5A SMAJ36A-E3/5A smaj50a.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 36VWM 58.1VC DO214AC
Part Status: Active
Power Line Protection: No
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 6.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
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23+ 1.17 EUR
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1N4754A-TAP 1N4754A-TAP 1n4728a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 39V 1.3W DO41
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
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1N4754A-T ds18007_R19.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 39V 1.3W DO41
Power - Max: 1.3 W
Impedance (Max) (Zzt): 1 kOhms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Part Status: Obsolete
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
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GBL08-5000M3/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBL08-5300E3/51 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
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GBL08L-5306E3/45 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBL
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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GBL08L-5701E3/45 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBL
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
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GBL08L-5701E3/51 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Package / Case: 4-SIP, GBL
Packaging: Tube
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
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GBL08L-5701M3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBL
Package / Case: 4-SIP, GBL
Packaging: Tube
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBL08L-7000E3/45 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 3A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MSS1P3LHM3_A/H MSS1P3LHM3_A/H mss1p3l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A MICROSMP
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A MICROSMP
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
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27+ 0.99 EUR
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1.5KE39CAHE3/51 1.5KE39CAHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Part Status: Obsolete
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Applications: Automotive
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1.5KE39CAL31HE3/72 1.5KE39CAL31HE3/72 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 1500W 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
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1.5SMC56AHE3_A/H 15smc.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 47.8VWM 77VC SMC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 77V
Voltage - Breakdown (Min): 53.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 47.8V
Current - Peak Pulse (10/1000µs): 19.5A
Applications: Automotive
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SB160-E3/73 SB160-E3/73 sb110.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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ES2DHE3_A/I ES2DHE3_A/I es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO214AA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ES2DHE3_A/H ES2DHE3_A/H es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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BYG10YHM3_A/I BYG10YHM3_A/I byg10.pdf Vishay General Semiconductor - Diodes Division Description: 1.5A,1600V,STD,AVALANCHE,SMD
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A (DC)
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5KP188A-E3/54 5KP188A-E3/54 88308.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 188VWM 328VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
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1N6267A-E3/54 1N6267A-E3/54 15ke.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 5.8VWM 10.5VC 1.5KE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 143A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Cut Tape (CT)
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BZX85C5V6-TAP BZX85C5V6-TAP bzx85.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.6V 1.3W DO41
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 1.3 W
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Part Status: Active
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BYW29-100801HE3/45 BYW29-100801HE3/45 byw29200.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP TO220AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Base Part Number: BYW29
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SMBJ150AHM3/H SMBJ150AHM3/H smbj.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 150VWM 243VC DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 243V
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 2.5A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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BZX55C8V2-TAP BZX55C8V2-TAP bzx55.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 8.2V 500MW DO35
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
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BZX55C8V2-TR BZX55C8V2-TR bzx55.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
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BYG21M-E3/TR3 BYG21M-E3/TR3 byg21k.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 120 ns
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 31803 Stücke
Lieferzeit 21-28 Tag (e)
23+ 1.14 EUR
29+ 0.92 EUR
100+ 0.63 EUR
500+ 0.47 EUR
1000+ 0.35 EUR
2000+ 0.32 EUR
BYG21MHE3_A/H byg21k.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BYG21MHE3_A/I byg21k.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BYG21MHM3_A/H byg21k.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BYG21MHM3_A/I byg21k.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMAJ20CAHE3/61 SMAJ20CAHE3/61 smaj50a.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 20VWM 32.4VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Voltage - Reverse Standoff (Typ): 20V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 250 Stücke
Lieferzeit 21-28 Tag (e)
1N4760A-T ds18007.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 68V 1.3W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 2 kOhms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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1N4150W-E3-18 1N4150W-E3-18 1n4150w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 200MA SOD123
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 18411 Stücke
Lieferzeit 21-28 Tag (e)
39+ 0.68 EUR
46+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
1N4150W-HE3-08 1N4150W-HE3-08 1n4150w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 200MA SOD123
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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1N4150TAP 1N4150TAP 1n4150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 150MA DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4672 Stücke
Lieferzeit 21-28 Tag (e)
53+ 0.49 EUR
59+ 0.44 EUR
109+ 0.24 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.086 EUR
VS-25CTQ045-M3 VS-25CTQ045-M3 vs-25ctq035_040_045-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 45V TO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 710mV @ 30A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 25CTQ045
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1.75mA @ 45V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15MQ040HM3/5AT VS-15MQ040HM3/5AT vs-15mq040hm3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 28913 Stücke
Lieferzeit 21-28 Tag (e)
20+ 1.33 EUR
25+ 1.08 EUR
100+ 0.74 EUR
500+ 0.55 EUR
1000+ 0.41 EUR
2000+ 0.38 EUR
SMBJ85CD-M3/H SMBJ85CD-M3/H smbj5cdthrusmbj120cd.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 85VWM 135VC DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 4.46A
Voltage - Clamping (Max) @ Ipp: 135V
Voltage - Breakdown (Min): 95.7V
Voltage - Reverse Standoff (Typ): 85V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SMBJ85
Supplier Device Package: DO-214AA (SMBJ)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6750 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: TVS DIODE 85VWM 135VC DO214AA
Base Part Number: SMBJ85
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 4.46A
Voltage - Clamping (Max) @ Ipp: 135V
Voltage - Breakdown (Min): 95.7V
Voltage - Reverse Standoff (Typ): 85V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 7545 Stücke
Lieferzeit 21-28 Tag (e)
BZG03C10-HM3-08 bzg03c-m-series.pdf
BZG03C10-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.25W DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
Packaging: Cut Tape (CT)
auf Bestellung 3911 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1997 Stücke - Preis und Lieferfrist anzeigen
19+ 1.4 EUR
22+ 1.21 EUR
100+ 0.9 EUR
500+ 0.71 EUR
BZG03C180-HM3-08 bzg03c-m-series.pdf
BZG03C180-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1.25W DO214AC
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 400 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
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1500+ 0.55 EUR
3000+ 0.5 EUR
7500+ 0.48 EUR
BZG03C180-HM3-08 bzg03c-m-series.pdf
BZG03C180-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1.25W DO214AC
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 400 Ohms
Voltage - Zener (Nom) (Vz): 180 V
auf Bestellung 9175 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18107 Stücke - Preis und Lieferfrist anzeigen
19+ 1.4 EUR
22+ 1.21 EUR
100+ 0.9 EUR
500+ 0.71 EUR
BZG03C160-HM3-08 bzg03c-m-series.pdf
BZG03C160-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 1.25W DO214AC
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±4.06%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2791 Stücke - Preis und Lieferfrist anzeigen
1500+ 0.55 EUR
BZG03C160-HM3-08 bzg03c-m-series.pdf
BZG03C160-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 160V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 350 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±4.06%
Packaging: Cut Tape (CT)
auf Bestellung 2791 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
19+ 1.4 EUR
22+ 1.21 EUR
100+ 0.9 EUR
500+ 0.71 EUR
BZG03C91-HM3-08 bzg03c-m-series.pdf
BZG03C91-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
BZG03C91-HM3-08 bzg03c-m-series.pdf
BZG03C91-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
auf Bestellung 15 Stücke
Lieferzeit 21-28 Tag (e)
BZG03C91-M3-08 bzg03c-m-series.pdf
BZG03C91-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4694 Stücke - Preis und Lieferfrist anzeigen
1500+ 0.52 EUR
3000+ 0.48 EUR
BZG03C91-M3-08 bzg03c-m-series.pdf
BZG03C91-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Packaging: Cut Tape (CT)
auf Bestellung 4694 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
20+ 1.35 EUR
23+ 1.16 EUR
100+ 0.86 EUR
500+ 0.68 EUR
BZG03C82-M3-08 bzg03c-m-series.pdf
BZG03C82-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 1.25W DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Current - Reverse Leakage @ Vr: 1µA @ 62V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 1.25W
Tolerance: ±6.1%
Voltage - Zener (Nom) (Vz): 82V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZG03C11-HM3-08 bzg03c-m-series.pdf
BZG03C11-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 1.25W DO214AC
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.45%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90 Stücke - Preis und Lieferfrist anzeigen
BZG03C11-HM3-08 bzg03c-m-series.pdf
BZG03C11-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 1.25W DO214AC
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.45%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
auf Bestellung 90 Stücke
Lieferzeit 21-28 Tag (e)
19+ 1.4 EUR
22+ 1.21 EUR
BZG03C16-HM3-08 bzg03c-m-series.pdf
BZG03C16-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.63%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX84B12-E3-08 bzx84v.pdf
BZX84B12-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Packaging: Cut Tape (CT)
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
auf Bestellung 14298 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18559 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
48+ 0.54 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
SMBJ10A-E3/5B smbj.pdf
SMBJ10A-E3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AA
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2489 Stücke - Preis und Lieferfrist anzeigen
CS1M-E3/I cs1dgjkm.pdf
CS1M-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1000V 1.0A DO-214AC
Base Part Number: CS1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 39142 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 69070 Stücke - Preis und Lieferfrist anzeigen
SM8S15A-002HE3/2D SM8S10_thru_SM8S43A._Aug.31,2016.pdf
SM8S15A-002HE3/2D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO218AB
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 24.4V
Voltage - Breakdown (Min): 16.7V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 270A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU8M-7001E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 3.9 A
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU8ML-7001M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU8ML-7014M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.9A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 3.9 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4743A-T 1N4728A-thru-1N4764A_Rev19-3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 1.3W DO41
Part Status: Obsolete
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 700 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS70-06-HE3-08 bas70.pdf
BAS70-06-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 70V SOT23
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 13738 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 26805 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
31+ 0.85 EUR
100+ 0.48 EUR
500+ 0.32 EUR
1000+ 0.24 EUR
BAS70-06-HE3-18 bas70.pdf
BAS70-06-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 70V SOT23
Diode Type: Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 5 ns
Packaging: Cut Tape (CT)
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 10188 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
31+ 0.85 EUR
100+ 0.48 EUR
500+ 0.32 EUR
1000+ 0.24 EUR
2000+ 0.21 EUR
5000+ 0.19 EUR
BAS70-06-E3-18 bas70.pdf
BAS70-06-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 70V SOT23
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 1 Pair Common Anode
Reverse Recovery Time (trr): 5 ns
auf Bestellung 6932 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9997 Stücke - Preis und Lieferfrist anzeigen
24+ 1.09 EUR
33+ 0.81 EUR
100+ 0.46 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
2000+ 0.2 EUR
5000+ 0.18 EUR
1N4761A-TAP 1n4728a.pdf
1N4761A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1.3W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 175 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 56 V
auf Bestellung 4622 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
VS-8ETL06-1-M3 vs-8etl06s-m3.pdf
VS-8ETL06-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27B200P-M3-08 bzd27b-mseries.pdf
BZD27B200P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 800MW DO219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Part Status: Active
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17703 Stücke - Preis und Lieferfrist anzeigen
1N4746A-TAP 1n4728a.pdf
1N4746A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 4387 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 95000 Stücke - Preis und Lieferfrist anzeigen
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
ES2D-E3/5BT es2.pdf
ES2D-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 2756 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 253 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
26+ 1 EUR
100+ 0.75 EUR
500+ 0.59 EUR
1000+ 0.45 EUR
SMBJ28AHE3_A/I smbj.pdf
SMBJ28AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.5VC DO214AA
Voltage - Reverse Standoff (Typ): 28V
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 45.5V
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Breakdown (Min): 31.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU4K-5400M3/51 GBU4x-M3_ProdBundle_Aug5,2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBU
Diode Type: Single Phase
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU
Technology: Standard
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU4KL-6437E3/51 GBU4x_ProdBundle_Aug5,2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBU
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU4KL-6437M3/51 GBU4x-M3_ProdBundle_Aug5,2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBU
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU4KL-7014M3/45 GBU4x-M3_ProdBundle_Aug5,2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBU
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMZG3788BHE3/5B smzg.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.5W DO215AA
Current - Reverse Leakage @ Vr: 50 µA @ 7 V
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: DO-215AA (SMBG)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-8TQ100-M3 vs-8tq060-m3.pdf
VS-8TQ100-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO220AC
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 28103 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1766 Stücke - Preis und Lieferfrist anzeigen
6+ 4.37 EUR
10+ 3.92 EUR
100+ 3.15 EUR
500+ 2.59 EUR
1000+ 2.22 EUR
3N258-E4/72 2KBP005M-10M-E4,_3N253-259-E4_Rev_Apr_2017.pdf
3N258-E4/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Current - Reverse Leakage @ Vr: 5µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM
Base Part Number: 3N258
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UF5401-E3/73 uf5400.pdf
UF5401-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 970 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
16+ 1.69 EUR
19+ 1.43 EUR
100+ 1.07 EUR
500+ 0.84 EUR
VS-42CTQ030-M3 vs-42ctq030-m3.pdf
VS-42CTQ030-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V TO220AB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 30 V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 681 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1838 Stücke - Preis und Lieferfrist anzeigen
BYS10-35-E3/TR bys10.pdf
BYS10-35-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
auf Bestellung 2001 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
BYS10-45HE3_A/I bys10.pdf
BYS10-45HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYS10-35HE3_A/H bys10.pdf
BYS10-35HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
auf Bestellung 3600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4686 Stücke - Preis und Lieferfrist anzeigen
BYS10-35HE3_A/H bys10.pdf
BYS10-35HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
auf Bestellung 4686 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3600 Stücke - Preis und Lieferfrist anzeigen
BYS10-45HE3_A/H bys10.pdf
BYS10-45HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Mounting Type: Surface Mount
auf Bestellung 14400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17179 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.25 EUR
3600+ 0.23 EUR
5400+ 0.21 EUR
12600+ 0.2 EUR
BYS10-45HE3_A/H bys10.pdf
BYS10-45HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 17179 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14400 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
34+ 0.77 EUR
100+ 0.48 EUR
500+ 0.33 EUR
BYS11-90-E3/TR3 bys1190.pdf
BYS11-90-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12394 Stücke - Preis und Lieferfrist anzeigen
BYS11-90-M3/TR bys11-90.pdf
BYS11-90-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 6728 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10385 Stücke - Preis und Lieferfrist anzeigen
25+ 1.07 EUR
30+ 0.87 EUR
100+ 0.59 EUR
500+ 0.44 EUR
LL4148-M-08 ll4148m.pdf
LL4148-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 300MA SOD80
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
auf Bestellung 1651 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16272 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
54+ 0.49 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
LL4148-M-18 ll4148m.pdf
LL4148-M-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 300MA SOD80
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5659 Stücke - Preis und Lieferfrist anzeigen
PLZ5V1A-G3/H plzseries.pdf
PLZ5V1A-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.94V 960MW DO219AC
Package / Case: DO-219AC
Tolerance: ±2.63%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 4.94 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
auf Bestellung 4500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25322 Stücke - Preis und Lieferfrist anzeigen
4500+ 0.14 EUR
PLZ5V1A-G3/H plzseries.pdf
PLZ5V1A-G3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.94V 960MW DO219AC
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 960 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 4.94 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±2.63%
Packaging: Cut Tape (CT)
auf Bestellung 7046 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22776 Stücke - Preis und Lieferfrist anzeigen
35+ 0.75 EUR
42+ 0.63 EUR
100+ 0.34 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
2000+ 0.14 EUR
BYT52M-TAP byt52.pdf
BYT52M-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 4098 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17960 Stücke - Preis und Lieferfrist anzeigen
BYT52J-TR byt52.pdf
BYT52J-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22703 Stücke - Preis und Lieferfrist anzeigen
VS-MBR1045-M3 vs-mbr1035-m3.pdf
VS-MBR1045-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO220AC
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 29 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.68 EUR
11+ 2.4 EUR
MBR1045-10HE3/45 mbr10xx.pdf
MBR1045-10HE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ARRAY TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBR2545CT-M3 vs-mbr2535_45ct-m3.pdf
VS-MBR2545CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO220AB
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 746 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.45 EUR
10+ 3.97 EUR
100+ 3.09 EUR
500+ 2.55 EUR
MBR2545CT-7HE3/45 mbr25xxct.pdf
MBR2545CT-7HE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ARRAY TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR2545CT801HE3/45 mbr25xxct.pdf
MBR2545CT801HE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ARRAY TO220AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Package / Case: TO-220-3
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMAJ36A-E3/5A smaj50a.pdf
SMAJ36A-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AC
Part Status: Active
Power Line Protection: No
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 6.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 78 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 162488 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
30+ 0.89 EUR
1N4754A-TAP 1n4728a.pdf
1N4754A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.3W DO41
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
auf Bestellung 8811 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40018 Stücke - Preis und Lieferfrist anzeigen
30+ 0.88 EUR
36+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
1N4754A-T ds18007_R19.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.3W DO41
Power - Max: 1.3 W
Impedance (Max) (Zzt): 1 kOhms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Part Status: Obsolete
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15828 Stücke - Preis und Lieferfrist anzeigen
GBL08-5000M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBL08-5300E3/51 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBL08L-5306E3/45 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBL
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBL08L-5701E3/45 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBL
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBL08L-5701E3/51 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Package / Case: 4-SIP, GBL
Packaging: Tube
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBL08L-5701M3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBL
Package / Case: 4-SIP, GBL
Packaging: Tube
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBL08L-7000E3/45 GBL005,GBL01,GBL02,GBL04,GBL06,GBL08,GBL10_ProdBundle.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSS1P3LHM3_A/H mss1p3l.pdf
MSS1P3LHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10254 Stücke - Preis und Lieferfrist anzeigen
MSS1P3LHM3_A/H mss1p3l.pdf
MSS1P3LHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: MicroSMP
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: MicroSMP (DO-219AD)
auf Bestellung 8465 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1789 Stücke - Preis und Lieferfrist anzeigen
27+ 0.99 EUR
35+ 0.74 EUR
100+ 0.42 EUR
500+ 0.28 EUR
1000+ 0.21 EUR
2000+ 0.19 EUR
1.5KE39CAHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE39CAHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Part Status: Obsolete
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 27.8A
Applications: Automotive
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5KE39CAL31HE3/72
1.5KE39CAL31HE3/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1500W 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC56AHE3_A/H 15smc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 47.8VWM 77VC SMC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 77V
Voltage - Breakdown (Min): 53.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 47.8V
Current - Peak Pulse (10/1000µs): 19.5A
Applications: Automotive
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB160-E3/73 sb110.pdf
SB160-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 2962 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
ES2DHE3_A/I es2.pdf
ES2DHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2960 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2436 Stücke - Preis und Lieferfrist anzeigen
18+ 1.46 EUR
21+ 1.24 EUR
100+ 0.93 EUR
500+ 0.73 EUR
1000+ 0.56 EUR
ES2DHE3_A/H es2.pdf
ES2DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG10YHM3_A/I byg10.pdf
BYG10YHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 1.5A,1600V,STD,AVALANCHE,SMD
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13256 Stücke - Preis und Lieferfrist anzeigen
5KP188A-E3/54 88308.pdf
5KP188A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6267A-E3/54 15ke.pdf
1N6267A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC 1.5KE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.45V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 143A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Cut Tape (CT)
auf Bestellung 92 Stücke
Lieferzeit 21-28 Tag (e)
13+ 2 EUR
15+ 1.77 EUR
BZX85C5V6-TAP техническая информация bzx85.pdf
BZX85C5V6-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 1.3W DO41
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Power - Max: 1.3 W
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 822 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 95140 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
31+ 0.84 EUR
100+ 0.45 EUR
500+ 0.29 EUR
BYW29-100801HE3/45 byw29200.pdf
BYW29-100801HE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP TO220AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Base Part Number: BYW29
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ150AHM3/H smbj.pdf
SMBJ150AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 243VC DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 243V
Voltage - Breakdown (Min): 167V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 150V
Current - Peak Pulse (10/1000µs): 2.5A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX55C8V2-TAP bzx55.pdf
BZX55C8V2-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO35
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
auf Bestellung 13032 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 70540 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
55+ 0.48 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.093 EUR
5000+ 0.084 EUR
BZX55C8V2-TR bzx55.pdf
BZX55C8V2-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
auf Bestellung 28082 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
55+ 0.48 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.093 EUR
5000+ 0.084 EUR
BYG21M-E3/TR3 byg21k.pdf
BYG21M-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 120 ns
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 31803 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22500 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
29+ 0.92 EUR
100+ 0.63 EUR
500+ 0.47 EUR
1000+ 0.35 EUR
2000+ 0.32 EUR
BYG21MHE3_A/H byg21k.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG21MHE3_A/I byg21k.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG21MHM3_A/H byg21k.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG21MHM3_A/I byg21k.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMAJ20CAHE3/61 smaj50a.pdf
SMAJ20CAHE3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Clamping (Max) @ Ipp: 32.4V
Voltage - Breakdown (Min): 22.2V
Voltage - Reverse Standoff (Typ): 20V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
auf Bestellung 250 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 743 Stücke - Preis und Lieferfrist anzeigen
1N4760A-T ds18007.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 1.3W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 2 kOhms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4150W-E3-18 1n4150w.pdf
1N4150W-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
auf Bestellung 18411 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19155 Stücke - Preis und Lieferfrist anzeigen
39+ 0.68 EUR
46+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
1N4150W-HE3-08 1n4150w.pdf
1N4150W-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 457 Stücke - Preis und Lieferfrist anzeigen
1N4150TAP 1n4150.pdf
1N4150TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 4672 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33160 Stücke - Preis und Lieferfrist anzeigen
53+ 0.49 EUR
59+ 0.44 EUR
109+ 0.24 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.086 EUR
VS-25CTQ045-M3 vs-25ctq035_040_045-m3.pdf
VS-25CTQ045-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO220AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 710mV @ 30A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 25CTQ045
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1.75mA @ 45V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-15MQ040HM3/5AT vs-15mq040hm3.pdf
VS-15MQ040HM3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 28913 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25863 Stücke - Preis und Lieferfrist anzeigen
20+ 1.33 EUR
25+ 1.08 EUR
100+ 0.74 EUR
500+ 0.55 EUR
1000+ 0.41 EUR
2000+ 0.38 EUR
SMBJ85CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ85CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85VWM 135VC DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 4.46A
Voltage - Clamping (Max) @ Ipp: 135V
Voltage - Breakdown (Min): 95.7V
Voltage - Reverse Standoff (Typ): 85V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SMBJ85
Supplier Device Package: DO-214AA (SMBJ)
auf Bestellung 6750 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15195 Stücke - Preis und Lieferfrist anzeigen
SMBJ85CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ85CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85VWM 135VC DO214AA
Base Part Number: SMBJ85
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 4.46A
Voltage - Clamping (Max) @ Ipp: 135V
Voltage - Breakdown (Min): 95.7V
Voltage - Reverse Standoff (Typ): 85V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7545 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14400 Stücke - Preis und Lieferfrist anzeigen
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