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FEP16DT-E3/45 FEP16DT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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7+3.2 EUR
50+1.69 EUR
100+1.52 EUR
500+1.24 EUR
1000+1.15 EUR
2000+1.07 EUR
5000+1.05 EUR
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FEP16DTHE3/45 FEP16DTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 16A TO220-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FEP16FT-E3/45 FEP16FT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 300V 16A TO220-3
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
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FEP16FTHE3/45 FEP16FTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 300V 16A TO220AB
Produkt ist nicht verfügbar
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FEP16GT-E3/45 FEP16GT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 400V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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FEP16GTHE3/45 FEP16GTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 400V 16A TO-220-3
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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FEP16HT-E3/45 FEP16HT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 500V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1027 Stücke:
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FEP16JT-E3/45 FEP16JT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 600V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 931 Stücke:
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50+1.33 EUR
100+1.3 EUR
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FEP30AP-E3/45 FEP30AP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 50V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FEP30BP-E3/45 FEP30BP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 100V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FEP30CP-E3/45 FEP30CP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 150V 15A TO247AD
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Produkt ist nicht verfügbar
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FEP30FP-E3/45 FEP30FP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 300V 15A TO247AD
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
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FEP30HP-E3/45 FEP30HP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 500V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 612 Stücke:
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FEP30JP-E3/45 FEP30JP-E3/45 Vishay General Semiconductor - Diodes Division doc?98732 Description: DIODE ARRAY GP 600V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 735 Stücke:
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30+3.77 EUR
120+3.08 EUR
510+2.58 EUR
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FEPB16DTHE3/45 FEPB16DTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Produkt ist nicht verfügbar
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FEPB16JTHE3/45 FEPB16JTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 600V 8A TO263AB
Produkt ist nicht verfügbar
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FEPF16DT-E3/45 FEPF16DT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 8A ITO220AB
Produkt ist nicht verfügbar
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FEPF16DTHE3/45 FEPF16DTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 200V 8A ITO220AB
Produkt ist nicht verfügbar
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FEPF16FT-E3/45 FEPF16FT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 300V 8A ITO220AB
Produkt ist nicht verfügbar
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FEPF16FTHE3/45 FEPF16FTHE3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 300V 8A ITO220AB
Produkt ist nicht verfügbar
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FEPF16JT-E3/45 FEPF16JT-E3/45 Vishay General Semiconductor - Diodes Division fep16jt.pdf Description: DIODE ARRAY GP 600V 8A ITO220AB
Produkt ist nicht verfügbar
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FES16AT-E3/45 FES16AT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 50V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1000 Stücke:
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8+2.78 EUR
50+1.62 EUR
100+1.54 EUR
500+1.24 EUR
1000+1.12 EUR
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FES16ATHE3/45 FES16ATHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 50V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES16BT-E3/45 FES16BT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 100V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 719 Stücke:
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8+2.84 EUR
50+1.12 EUR
100+1.09 EUR
500+1.04 EUR
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FES16BTHE3/45 FES16BTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 100V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES16CT-E3/45 FES16CT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 150V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FES16CTHE3/45 FES16CTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 150V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES16DT-E3/45 FES16DT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 314 Stücke:
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5+4.21 EUR
50+2.05 EUR
100+1.83 EUR
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FES16DTHE3/45 FES16DTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES16FT-E3/45 FES16FT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 300V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FES16FTHE3/45 FES16FTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 300V 16A TO220AC
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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FES16GT-E3/45 FES16GT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 400V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.08 EUR
50+1.34 EUR
100+1.2 EUR
500+1.19 EUR
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FES16GTHE3/45 FES16GTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16HT-E3/45 FES16HT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 500V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FES16HTHE3/45 FES16HTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 500V 16A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FES16JT-E3/45 FES16JT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 600V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.93 EUR
50+1.13 EUR
100+1.12 EUR
500+1.07 EUR
1000+1.02 EUR
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FES16JTHE3/45 FES16JTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 600V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES8AT-E3/45 FES8AT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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FES8ATHE3/45 FES8ATHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES8BT-E3/45 FES8BT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 100V 8A TO220AC
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Lieferzeit 10-14 Tag (e)
9+2.4 EUR
10+2.15 EUR
100+1.68 EUR
500+1.38 EUR
1000+1.13 EUR
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FES8BTHE3/45 FES8BTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
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FES8CTHE3/45 FES8CTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 150V 8A TO220AC
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FES8DT-E3/45 FES8DT-E3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1437 Stücke:
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10+2.12 EUR
50+1.7 EUR
100+1.34 EUR
500+1.14 EUR
1000+0.93 EUR
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FES8DTHE3/45 FES8DTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8FT-E3/45 FES8FT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
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FES8FTHE3/45 FES8FTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8GT-E3/45 FES8GT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 622 Stücke:
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10+2.09 EUR
13+1.71 EUR
100+1.33 EUR
500+1.13 EUR
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FES8GTHE3/45 FES8GTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 400V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FES8HT-E3/45 FES8HT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FES8HTHE3/45 FES8HTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8JT-E3/45 FES8JT-E3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE STANDARD 600V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 27 Stücke:
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FES8JTHE3/45 FES8JTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FESB16AT-E3/45 FESB16AT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FESB16ATHE3/45 FESB16ATHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16BT-E3/45 FESB16BT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16BTHE3/45 FESB16BTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO263AB
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FESB16CT-E3/45 FESB16CT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16CTHE3/45 FESB16CTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
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FESB16DTHE3/45 FESB16DTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 200V 16A TO263AB
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FESB16FT-E3/45 FESB16FT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 300V 16A TO263AB
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FEP16DT-E3/45 fep16jt.pdf
FEP16DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 12184 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
50+1.69 EUR
100+1.52 EUR
500+1.24 EUR
1000+1.15 EUR
2000+1.07 EUR
5000+1.05 EUR
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FEP16DTHE3/45 fep16jt.pdf
FEP16DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 16A TO220-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FEP16FT-E3/45 fep16jt.pdf
FEP16FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 16A TO220-3
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
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FEP16FTHE3/45 fep16jt.pdf
FEP16FTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 16A TO220AB
Produkt ist nicht verfügbar
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FEP16GT-E3/45 fep16jt.pdf
FEP16GT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3633 Stücke:
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AnzahlPrivatkunde
4+6.28 EUR
10+4.09 EUR
50+3.15 EUR
100+2.84 EUR
500+2.31 EUR
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FEP16GTHE3/45 fep16jt.pdf
FEP16GTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 16A TO-220-3
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FEP16HT-E3/45 fep16jt.pdf
FEP16HT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 500V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1027 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
50+1.62 EUR
100+1.33 EUR
500+1.2 EUR
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FEP16JT-E3/45 fep16jt.pdf
FEP16JT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 931 Stücke:
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AnzahlPrivatkunde
7+3.2 EUR
50+1.33 EUR
100+1.3 EUR
500+1.25 EUR
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FEP30AP-E3/45 fep30xp-e3.pdf
FEP30AP-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 50V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FEP30BP-E3/45 fep30xp-e3.pdf
FEP30BP-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FEP30CP-E3/45 fep30xp-e3.pdf
FEP30CP-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 150V 15A TO247AD
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Produkt ist nicht verfügbar
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FEP30FP-E3/45 fep30xp-e3.pdf
FEP30FP-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 15A TO247AD
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
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FEP30HP-E3/45 fep30xp-e3.pdf
FEP30HP-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 500V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 612 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.33 EUR
30+3.7 EUR
120+3.08 EUR
510+2.63 EUR
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FEP30JP-E3/45 doc?98732
FEP30JP-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 735 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.87 EUR
30+3.77 EUR
120+3.08 EUR
510+2.58 EUR
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FEPB16DTHE3/45 fep16jt.pdf
FEPB16DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Produkt ist nicht verfügbar
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FEPB16JTHE3/45 fep16jt.pdf
FEPB16JTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AB
Produkt ist nicht verfügbar
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FEPF16DT-E3/45 fep16jt.pdf
FEPF16DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A ITO220AB
Produkt ist nicht verfügbar
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FEPF16DTHE3/45 fep16jt.pdf
FEPF16DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A ITO220AB
Produkt ist nicht verfügbar
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FEPF16FT-E3/45 fep16jt.pdf
FEPF16FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 8A ITO220AB
Produkt ist nicht verfügbar
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FEPF16FTHE3/45 fep16jt.pdf
FEPF16FTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 8A ITO220AB
Produkt ist nicht verfügbar
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FEPF16JT-E3/45 fep16jt.pdf
FEPF16JT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A ITO220AB
Produkt ist nicht verfügbar
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FES16AT-E3/45 fes16jt.pdf
FES16AT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
50+1.62 EUR
100+1.54 EUR
500+1.24 EUR
1000+1.12 EUR
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FES16ATHE3/45 fes16jt.pdf
FES16ATHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES16BT-E3/45 fes16jt.pdf
FES16BT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 719 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.84 EUR
50+1.12 EUR
100+1.09 EUR
500+1.04 EUR
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FES16BTHE3/45 fes16jt.pdf
FES16BTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES16CT-E3/45 fes16jt.pdf
FES16CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
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FES16CTHE3/45 fes16jt.pdf
FES16CTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16DT-E3/45 fes16jt.pdf
FES16DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.21 EUR
50+2.05 EUR
100+1.83 EUR
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FES16DTHE3/45 fes16jt.pdf
FES16DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16FT-E3/45 fes16jt.pdf
FES16FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
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FES16FTHE3/45 fes16jt.pdf
FES16FTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 16A TO220AC
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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FES16GT-E3/45 fes16jt.pdf
FES16GT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
50+1.34 EUR
100+1.2 EUR
500+1.19 EUR
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FES16GTHE3/45 fes16jt.pdf
FES16GTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16HT-E3/45 fes16jt.pdf
FES16HT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16HTHE3/45 fes16jt.pdf
FES16HTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 16A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16JT-E3/45 fes16jt.pdf
FES16JT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
50+1.13 EUR
100+1.12 EUR
500+1.07 EUR
1000+1.02 EUR
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FES16JTHE3/45 fes16jt.pdf
FES16JTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES8AT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8AT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FES8ATHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8ATHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8BT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8BT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO220AC
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
10+2.15 EUR
100+1.68 EUR
500+1.38 EUR
1000+1.13 EUR
Mindestbestellmenge: 9 Stücke
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FES8BTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8BTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8CTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8CTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8DT-E3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
50+1.7 EUR
100+1.34 EUR
500+1.14 EUR
1000+0.93 EUR
Mindestbestellmenge: 10 Stücke
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FES8DTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8FT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FES8FTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8FTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8GT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8GT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
13+1.71 EUR
100+1.33 EUR
500+1.13 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FES8GTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8GTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8HT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8HT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FES8HTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8HTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8JT-E3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8JT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
Mindestbestellmenge: 19 Stücke
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FES8JTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8JTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FESB16AT-E3/45 fes16jt.pdf
FESB16AT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16ATHE3/45 fes16jt.pdf
FESB16ATHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16BT-E3/45 fes16jt.pdf
FESB16BT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16BTHE3/45 fes16jt.pdf
FESB16BTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16CT-E3/45 fes16jt.pdf
FESB16CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16CTHE3/45 fes16jt.pdf
FESB16CTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16DTHE3/45 fes16jt.pdf
FESB16DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16FT-E3/45 fes16jt.pdf
FESB16FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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