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FES16CTHE3/45 FES16CTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 150V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16DT-E3/45 FES16DT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
50+2.05 EUR
100+1.83 EUR
Mindestbestellmenge: 5 Stücke
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FES16DTHE3/45 FES16DTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16FT-E3/45 FES16FT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 300V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FES16FTHE3/45 FES16FTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 300V 16A TO220AC
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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FES16GT-E3/45 FES16GT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 400V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.08 EUR
50+1.34 EUR
100+1.2 EUR
500+1.19 EUR
Mindestbestellmenge: 7 Stücke
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FES16GTHE3/45 FES16GTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16HT-E3/45 FES16HT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 500V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16HTHE3/45 FES16HTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 500V 16A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16JT-E3/45 FES16JT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 600V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.93 EUR
50+1.13 EUR
100+1.12 EUR
500+1.07 EUR
1000+1.02 EUR
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FES16JTHE3/45 FES16JTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 600V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8AT-E3/45 FES8AT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FES8ATHE3/45 FES8ATHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FES8BT-E3/45 FES8BT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 100V 8A TO220AC
auf Bestellung 1000 Stücke:
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9+2.4 EUR
10+2.15 EUR
100+1.68 EUR
500+1.38 EUR
1000+1.13 EUR
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FES8BTHE3/45 FES8BTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
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FES8CTHE3/45 FES8CTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
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FES8DT-E3/45 FES8DT-E3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1437 Stücke:
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10+2.12 EUR
50+1.7 EUR
100+1.34 EUR
500+1.14 EUR
1000+0.93 EUR
Mindestbestellmenge: 10 Stücke
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FES8DTHE3/45 FES8DTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8FT-E3/45 FES8FT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FES8FTHE3/45 FES8FTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8GT-E3/45 FES8GT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.09 EUR
13+1.71 EUR
100+1.33 EUR
500+1.13 EUR
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FES8GTHE3/45 FES8GTHE3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 400V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8HT-E3/45 FES8HT-E3/45 Vishay General Semiconductor - Diodes Division FES(F,B)8AT_thru_8JT.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FES8HTHE3/45 FES8HTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 500V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8JT-E3/45 FES8JT-E3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE STANDARD 600V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 27 Stücke:
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19+1.15 EUR
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FES8JTHE3/45 FES8JTHE3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FESB16AT-E3/45 FESB16AT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FESB16ATHE3/45 FESB16ATHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16BT-E3/45 FESB16BT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16BTHE3/45 FESB16BTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16CT-E3/45 FESB16CT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FESB16CTHE3/45 FESB16CTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16DTHE3/45 FESB16DTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 200V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16FT-E3/45 FESB16FT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FESB16FTHE3/45 FESB16FTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16GT-E3/45 FESB16GT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO263AB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FESB16GTHE3/45 FESB16GTHE3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO263AB
Produkt ist nicht verfügbar
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FESB16JT-E3/45 FESB16JT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1121 Stücke:
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7+3.31 EUR
10+2.75 EUR
100+2.19 EUR
500+1.86 EUR
1000+1.57 EUR
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FESB8DT-E3/45 FESB8DT-E3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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FESF16AT-E3/45 FESF16AT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 50V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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FESF16BT-E3/45 FESF16BT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 100V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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FESF16CT-E3/45 FESF16CT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 150V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
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FESF16DT-E3/45 FESF16DT-E3/45 Vishay General Semiconductor - Diodes Division tf-fesf16dt-e3-45.pdf Description: DIODE STANDARD 200V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.25 EUR
50+1.73 EUR
100+1.7 EUR
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FESF16FT-E3/45 FESF16FT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FESF16GT-E3/45 FESF16GT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 400V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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FESF16HT-E3/45 FESF16HT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 500V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FESF16JT-E3/45 FESF16JT-E3/45 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE STANDARD 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
50+1.7 EUR
100+1.69 EUR
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FESF8DT-E3/45 FESF8DT-E3/45 Vishay General Semiconductor - Diodes Division FES%28F%2CB%298AT_thru_8JT.pdf Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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G2SB60-E3/45 G2SB60-E3/45 Vishay General Semiconductor - Diodes Division irl620.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G2SB80-E3/45 G2SB80-E3/45 Vishay General Semiconductor - Diodes Division irl620.pdf Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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G2SBA20-E3/45 G2SBA20-E3/45 Vishay General Semiconductor - Diodes Division G2SBA20,60,80.pdf Description: BRIDGE RECT 1PHASE 200V 1.5A GBL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G2SBA60-E3/45 G2SBA60-E3/45 Vishay General Semiconductor - Diodes Division G2SBA20%2C60%2C80.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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G2SBA60L-E3/45 G2SBA60L-E3/45 Vishay General Semiconductor - Diodes Division G2SBA20,60,80.pdf Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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G2SBA80-E3/45 G2SBA80-E3/45 Vishay General Semiconductor - Diodes Division G2SBA20,60,80.pdf Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3SBA20-E3/45 G3SBA20-E3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
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G3SBA20L-E3/45 G3SBA20L-E3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
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G3SBA60L-E3/45 G3SBA60L-E3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3SBA80-E3/45 G3SBA80-E3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1600 Stücke
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G5SBA20-E3/45 G5SBA20-E3/45 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Packaging: Tube
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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G5SBA20L-E3/45 G5SBA20L-E3/45 Vishay General Semiconductor - Diodes Division g5sba20.pdf Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Produkt ist nicht verfügbar
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FES16CTHE3/45 fes16jt.pdf
FES16CTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16DT-E3/45 fes16jt.pdf
FES16DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.21 EUR
50+2.05 EUR
100+1.83 EUR
Mindestbestellmenge: 5 Stücke
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FES16DTHE3/45 fes16jt.pdf
FES16DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16FT-E3/45 fes16jt.pdf
FES16FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FES16FTHE3/45 fes16jt.pdf
FES16FTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 16A TO220AC
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16GT-E3/45 fes16jt.pdf
FES16GT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
50+1.34 EUR
100+1.2 EUR
500+1.19 EUR
Mindestbestellmenge: 7 Stücke
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FES16GTHE3/45 fes16jt.pdf
FES16GTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16HT-E3/45 fes16jt.pdf
FES16HT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16HTHE3/45 fes16jt.pdf
FES16HTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 16A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES16JT-E3/45 fes16jt.pdf
FES16JT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
50+1.13 EUR
100+1.12 EUR
500+1.07 EUR
1000+1.02 EUR
Mindestbestellmenge: 8 Stücke
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FES16JTHE3/45 fes16jt.pdf
FES16JTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8AT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8AT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FES8ATHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8ATHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8BT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8BT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO220AC
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
10+2.15 EUR
100+1.68 EUR
500+1.38 EUR
1000+1.13 EUR
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FES8BTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8BTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8CTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8CTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 8A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8DT-E3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
50+1.7 EUR
100+1.34 EUR
500+1.14 EUR
1000+0.93 EUR
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FES8DTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8FT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FES8FTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8FTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8GT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8GT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
13+1.71 EUR
100+1.33 EUR
500+1.13 EUR
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FES8GTHE3/45 FES(F,B)8AT_thru_8JT.pdf
FES8GTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8HT-E3/45 FES(F,B)8AT_thru_8JT.pdf
FES8HT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FES8HTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8HTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES8JT-E3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8JT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FES8JTHE3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FES8JTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FESB16AT-E3/45 fes16jt.pdf
FESB16AT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16ATHE3/45 fes16jt.pdf
FESB16ATHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16BT-E3/45 fes16jt.pdf
FESB16BT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16BTHE3/45 fes16jt.pdf
FESB16BTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16CT-E3/45 fes16jt.pdf
FESB16CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16CTHE3/45 fes16jt.pdf
FESB16CTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16DTHE3/45 fes16jt.pdf
FESB16DTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16FT-E3/45 fes16jt.pdf
FESB16FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16FTHE3/45 fes16jt.pdf
FESB16FTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16GT-E3/45 fes16jt.pdf
FESB16GT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16GTHE3/45 fes16jt.pdf
FESB16GTHE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16JT-E3/45 fes16jt.pdf
FESB16JT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1121 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.75 EUR
100+2.19 EUR
500+1.86 EUR
1000+1.57 EUR
Mindestbestellmenge: 7 Stücke
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FESB8DT-E3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FESB8DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESF16AT-E3/45 fes16jt.pdf
FESF16AT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESF16BT-E3/45 fes16jt.pdf
FESF16BT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESF16CT-E3/45 fes16jt.pdf
FESF16CT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESF16DT-E3/45 tf-fesf16dt-e3-45.pdf
FESF16DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
50+1.73 EUR
100+1.7 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESF16FT-E3/45 fes16jt.pdf
FESF16FT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESF16GT-E3/45 fes16jt.pdf
FESF16GT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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FESF16HT-E3/45 fes16jt.pdf
FESF16HT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 500V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FESF16JT-E3/45 fes16jt.pdf
FESF16JT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.24 EUR
50+1.7 EUR
100+1.69 EUR
Mindestbestellmenge: 5 Stücke
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FESF8DT-E3/45 FES%28F%2CB%298AT_thru_8JT.pdf
FESF8DT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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G2SB60-E3/45 irl620.pdf
G2SB60-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G2SB80-E3/45 irl620.pdf
G2SB80-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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G2SBA20-E3/45 G2SBA20,60,80.pdf
G2SBA20-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL
Produkt ist nicht verfügbar
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G2SBA60-E3/45 G2SBA20%2C60%2C80.pdf
G2SBA60-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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G2SBA60L-E3/45 G2SBA20,60,80.pdf
G2SBA60L-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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G2SBA80-E3/45 G2SBA20,60,80.pdf
G2SBA80-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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G3SBA20-E3/45 g3sba20.pdf
G3SBA20-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3SBA20L-E3/45 g3sba20.pdf
G3SBA20L-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3SBA60L-E3/45 g3sba20.pdf
G3SBA60L-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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G3SBA80-E3/45 g3sba20.pdf
G3SBA80-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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G5SBA20-E3/45 g5sba20.pdf
G5SBA20-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Average Rectified (Io): 2.8 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Packaging: Tube
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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G5SBA20L-E3/45 g5sba20.pdf
G5SBA20L-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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