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GBU4J-E3/45 GBU4J-E3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 600V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 698 Stücke:
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GBU4K-E3/45 GBU4K-E3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 800V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 885 Stücke:
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GBU6D-E3/45 GBU6D-E3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE 1-PH GBU 200V 6A 150C
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 818 Stücke:
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GBU6J-E3/45 GBU6J-E3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 600V 3.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 640 Stücke:
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GBU6K-E3/45 GBU6K-E3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 800V 3.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU8J-E3/45 GBU8J-E3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 646 Stücke:
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GBU8K-E3/45 GBU8K-E3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE 1-PH GBU 800V 8A 150C
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1035 Stücke:
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500+1.58 EUR
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GL34J/1 GL34J/1 Vishay General Semiconductor - Diodes Division gl34a.pdf Description: DIODE GEN PURP 600V 500MA DO213
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GSIB1560\45 GSIB1560\45 Vishay General Semiconductor - Diodes Division gsib15xx.pdf Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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KBP02M/1 KBP02M/1 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 200V 1.5A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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KBP04M/1 KBP04M/1 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 400V 1.5A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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KBP06M-E4/1 KBP06M-E4/1 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBU4B-E4/51 KBU4B-E4/51 Vishay General Semiconductor - Diodes Division kbu4.pdf Description: BRIDGE RECT 1PHASE 100V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 496 Stücke:
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KBU4D-E4/51 KBU4D-E4/51 Vishay General Semiconductor - Diodes Division kbu4.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 435 Stücke:
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KBU6D-E4/51 KBU6D-E4/51 Vishay General Semiconductor - Diodes Division kbu6.pdf Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 766 Stücke:
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KBU6G/1 KBU6G/1 Vishay General Semiconductor - Diodes Division kbu6.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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KBU6K-E4/51 KBU6K-E4/51 Vishay General Semiconductor - Diodes Division kbu6.pdf Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 412 Stücke:
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2+9.45 EUR
10+5.91 EUR
25+5.06 EUR
80+4.66 EUR
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KBU8B-E4/51 KBU8B-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1525 Stücke:
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500+3.77 EUR
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KBU8G-E4/51 KBU8G-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBU8J-E4/51 KBU8J-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 470 Stücke:
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2+9.13 EUR
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KBU8K-E4/51 KBU8K-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 2051 Stücke:
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KBU8M-E4/51 KBU8M-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 228 Stücke:
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3+8.40 EUR
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MB6S-E3/80 MB6S-E3/80 Vishay General Semiconductor - Diodes Division mb2s.pdf Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 96000 Stücke:
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3000+0.26 EUR
6000+0.25 EUR
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MBR10H100/45 MBR10H100/45 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
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MBR20H100CT/45 MBR20H100CT/45 Vishay General Semiconductor - Diodes Division MBR(B)20h90CT,100CT_Rev05.pdf Description: DIODE ARR SCHOT 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
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MBR3060PT-E3/45 MBR3060PT-E3/45 Vishay General Semiconductor - Diodes Division mbr3035p.pdf Description: DIODE ARR SCHOTT 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 mA @ 60 V
auf Bestellung 559 Stücke:
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MBR4060PT-E3/45 MBR4060PT-E3/45 Vishay General Semiconductor - Diodes Division MBR3035-3060PT.pdf Description: DIODE ARR SCHOTT 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 857 Stücke:
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120+1.74 EUR
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MBR760/45 MBR760/45 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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MBRB10H100/45 MBRB10H100/45 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
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MBRB10H100CT/31 MBRB10H100CT/31 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOTT 100V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Produkt ist nicht verfügbar
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MBRB20H100CT/45 MBRB20H100CT/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 100V TO263
Produkt ist nicht verfügbar
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MBRF10H100/45 MBRF10H100/45 Vishay General Semiconductor - Diodes Division mbr10hxx.pdf Description: DIODE SCHOTTKY 100V 10A ITO220AC
Produkt ist nicht verfügbar
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MBRF1635/45 MBRF1635/45 Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 35V 16A ITO220AC
Produkt ist nicht verfügbar
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MBRF2545CT/45 MBRF2545CT/45 Vishay General Semiconductor - Diodes Division mbr25xxct.pdf Description: DIODE ARR SCHOTTKY 45V ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar
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MBRF2560CT/45 MBRF2560CT/45 Vishay General Semiconductor - Diodes Division mbr25xxct.pdf Description: DIODE ARRAY SCHOTTKY 60V ITO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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MUR120/54 MUR120/54 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 200V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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MUR160/54 MUR160/54 Vishay General Semiconductor - Diodes Division MUR1x0-E3%2C.pdf Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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P600B-E3/54 P600B-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE STANDARD 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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P600D/4 P600D/4 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE P600 200V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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P600J-E3/54 P600J-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE P600 600V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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P600M-E3/54 P600M-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE STANDARD 1000V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 15200 Stücke:
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RGL34D/1 RGL34D/1 Vishay General Semiconductor - Diodes Division rgl34a.pdf Description: DIODE FAST MINIMELF 200V 150NS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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RGL34J/1 RGL34J/1 Vishay General Semiconductor - Diodes Division rgl34a.pdf Description: DIODE FAST MINIMELF 600V 250NS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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RGL41B/1 RGL41B/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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RGL41J/1 RGL41J/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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RGL41D/1 RGL41D/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 200V 1A DO213AB
Produkt ist nicht verfügbar
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RGL41G/1 RGL41G/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RGL41M/1 RGL41M/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE STANDARD 1000V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RGP02-20E/54 RGP02-20E/54 Vishay General Semiconductor - Diodes Division rgp02.pdf Description: DIODE STD 2000V 500MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Produkt ist nicht verfügbar
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RMB2S-E3/45 RMB2S-E3/45 Vishay General Semiconductor - Diodes Division rmbs.pdf Description: BRIDGE RECT 1P 200V 0.5A TO269AA
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4570 Stücke:
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10+1.81 EUR
15+1.21 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.67 EUR
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Mindestbestellmenge: 10
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RMB4S-E3/45 RMB4S-E3/45 Vishay General Semiconductor - Diodes Division rmbs.pdf Description: BRIDGE RECT 1P 400V 0.5A TO269AA
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS2G/1 RS2G/1 Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SB040/54 SB040/54 Vishay General Semiconductor - Diodes Division SB020%20thru%20SB060.pdf Description: DIODE SCHOTTKY 40V 600MA MPG06
Produkt ist nicht verfügbar
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SB140-E3/54 SB140-E3/54 Vishay General Semiconductor - Diodes Division sb110.pdf Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 22000 Stücke:
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SB150-E3/54 SB150-E3/54 Vishay General Semiconductor - Diodes Division sb110.pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 16500 Stücke:
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SB160-E3/54 SB160-E3/54 Vishay General Semiconductor - Diodes Division sb110.pdf Description: DIODE SCHOTTKY 60V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 11000 Stücke:
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5500+0.16 EUR
11000+0.14 EUR
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SB330/4 SB330/4 Vishay General Semiconductor - Diodes Division sb320.pdf Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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SB340/4 SB340/4 Vishay General Semiconductor - Diodes Division sb320.pdf Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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SB360-E3/54 SB360-E3/54 Vishay General Semiconductor - Diodes Division sb320.pdf Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 5600 Stücke:
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1400+0.31 EUR
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Mindestbestellmenge: 1400
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SB5H100/4 SB5H100/4 Vishay General Semiconductor - Diodes Division sb5h90.pdf Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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GBU4J-E3/45 gbu4a.pdf
GBU4J-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 698 Stücke:
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Anzahl Preis
5+4.33 EUR
10+2.79 EUR
100+1.92 EUR
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GBU4K-E3/45 gbu4a.pdf
GBU4K-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
20+1.77 EUR
100+1.63 EUR
500+1.39 EUR
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GBU6D-E3/45 gbu6a.pdf
GBU6D-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE 1-PH GBU 200V 6A 150C
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.50 EUR
20+2.13 EUR
100+1.69 EUR
500+1.39 EUR
Mindestbestellmenge: 6
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GBU6J-E3/45 gbu6a.pdf
GBU6J-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
20+2.48 EUR
100+2.14 EUR
500+1.72 EUR
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GBU6K-E3/45 gbu6a.pdf
GBU6K-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
20+1.70 EUR
100+1.61 EUR
500+1.57 EUR
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GBU8J-E3/45 gbu8a.pdf
GBU8J-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
20+1.81 EUR
100+1.72 EUR
500+1.68 EUR
Mindestbestellmenge: 4
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GBU8K-E3/45 gbu8a.pdf
GBU8K-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE 1-PH GBU 800V 8A 150C
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
20+2.41 EUR
100+1.92 EUR
500+1.58 EUR
1000+1.47 EUR
Mindestbestellmenge: 5
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GL34J/1 gl34a.pdf
GL34J/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 500MA DO213
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GSIB1560\45 gsib15xx.pdf
GSIB1560\45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBP02M/1 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP02M/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.5A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBP04M/1 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP04M/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.5A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBP06M-E4/1 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP06M-E4/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU4B-E4/51 kbu4.pdf
KBU4B-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.16 EUR
10+5.16 EUR
250+3.95 EUR
Mindestbestellmenge: 3
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KBU4D-E4/51 kbu4.pdf
KBU4D-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.16 EUR
10+5.16 EUR
25+4.87 EUR
80+4.18 EUR
250+3.95 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
KBU6D-E4/51 kbu6.pdf
KBU6D-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.60 EUR
10+4.02 EUR
250+3.02 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
KBU6G/1 kbu6.pdf
KBU6G/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU6K-E4/51 kbu6.pdf
KBU6K-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.45 EUR
10+5.91 EUR
25+5.06 EUR
80+4.66 EUR
250+4.06 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
KBU8B-E4/51 kbu8.pdf
KBU8B-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.45 EUR
10+6.30 EUR
25+5.47 EUR
80+4.66 EUR
250+4.06 EUR
500+3.77 EUR
1000+3.60 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
KBU8G-E4/51 kbu8.pdf
KBU8G-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU8J-E4/51 kbu8.pdf
KBU8J-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.13 EUR
10+6.00 EUR
250+5.16 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
KBU8K-E4/51 kbu8.pdf
KBU8K-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 2051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.55 EUR
10+5.04 EUR
250+4.59 EUR
500+4.42 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
KBU8M-E4/51 kbu8.pdf
KBU8M-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.40 EUR
10+5.08 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MB6S-E3/80 mb2s.pdf
MB6S-E3/80
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.25 EUR
9000+0.24 EUR
21000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
MBR10H100/45
MBR10H100/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR20H100CT/45 MBR(B)20h90CT,100CT_Rev05.pdf
MBR20H100CT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
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MBR3060PT-E3/45 mbr3035p.pdf
MBR3060PT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 mA @ 60 V
auf Bestellung 559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
30+2.20 EUR
120+2.04 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MBR4060PT-E3/45 MBR3035-3060PT.pdf
MBR4060PT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
30+1.80 EUR
120+1.74 EUR
510+1.68 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
MBR760/45
MBR760/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRB10H100/45
MBRB10H100/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRB10H100CT/31
MBRB10H100CT/31
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRB20H100CT/45
MBRB20H100CT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF10H100/45 mbr10hxx.pdf
MBRF10H100/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A ITO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF1635/45 mbrf16xx.pdf
MBRF1635/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A ITO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF2545CT/45 mbr25xxct.pdf
MBRF2545CT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 45V ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF2560CT/45 mbr25xxct.pdf
MBRF2560CT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V ITO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR120/54
MUR120/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR160/54 MUR1x0-E3%2C.pdf
MUR160/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P600B-E3/54 p600a.pdf
P600B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P600D/4 p600a.pdf
P600D/4
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE P600 200V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P600J-E3/54 p600a.pdf
P600J-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE P600 600V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 25600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.56 EUR
1600+0.53 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
P600M-E3/54 p600a.pdf
P600M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 15200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.55 EUR
1600+0.53 EUR
4000+0.52 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
RGL34D/1 rgl34a.pdf
RGL34D/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FAST MINIMELF 200V 150NS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGL34J/1 rgl34a.pdf
RGL34J/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FAST MINIMELF 600V 250NS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGL41B/1 bym1150.pdf
RGL41B/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGL41J/1 bym1150.pdf
RGL41J/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGL41D/1 bym1150.pdf
RGL41D/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGL41G/1 bym1150.pdf
RGL41G/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGL41M/1 bym1150.pdf
RGL41M/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGP02-20E/54 rgp02.pdf
RGP02-20E/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 2000V 500MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RMB2S-E3/45 rmbs.pdf
RMB2S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 0.5A TO269AA
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
15+1.21 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.67 EUR
2000+0.64 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
RMB4S-E3/45 rmbs.pdf
RMB4S-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 0.5A TO269AA
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
50+0.74 EUR
100+0.66 EUR
500+0.60 EUR
2000+0.58 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
RS2G/1 rs2a.pdf
RS2G/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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SB040/54 SB020%20thru%20SB060.pdf
SB040/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 600MA MPG06
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SB140-E3/54 sb110.pdf
SB140-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5500+0.11 EUR
16500+0.10 EUR
Mindestbestellmenge: 5500
Im Einkaufswagen  Stück im Wert von  UAH
SB150-E3/54 sb110.pdf
SB150-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 16500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5500+0.13 EUR
11000+0.12 EUR
Mindestbestellmenge: 5500
Im Einkaufswagen  Stück im Wert von  UAH
SB160-E3/54 sb110.pdf
SB160-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5500+0.16 EUR
11000+0.14 EUR
Mindestbestellmenge: 5500
Im Einkaufswagen  Stück im Wert von  UAH
SB330/4 sb320.pdf
SB330/4
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SB340/4 sb320.pdf
SB340/4
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SB360-E3/54 sb320.pdf
SB360-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1400+0.31 EUR
2800+0.29 EUR
4200+0.26 EUR
Mindestbestellmenge: 1400
Im Einkaufswagen  Stück im Wert von  UAH
SB5H100/4 sb5h90.pdf
SB5H100/4
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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