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BYG21M/54 BYG21M/54 Vishay General Semiconductor - Diodes Division byg21k.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYG22D-E3/TR BYG22D-E3/TR Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BYM10-1000/1 BYM10-1000/1 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYM10-400/1 BYM10-400/1 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EDF1AS/27 EDF1AS/27 Vishay General Semiconductor - Diodes Division edf1as.pdf Description: BRIDGE RECT 1PHASE 50V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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EDF1DM/45 EDF1DM/45 Vishay General Semiconductor - Diodes Division edf1am.pdf Description: BRIDGE RECT 1PHASE 200V 1A DFM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DFM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Packaging: Bulk
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EDF1DS/45 EDF1DS/45 Vishay General Semiconductor - Diodes Division edf1as.pdf Description: BRIDGE RECT 1PHASE 200V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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EGL41B/1 EGL41B/1 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41G/1 EGL41G/1 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Produkt ist nicht verfügbar
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ES2G/1 ES2G/1 Vishay General Semiconductor - Diodes Division es2f.pdf Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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FEP30DP-E3/45 FEP30DP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 200V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FEP30GP-E3/45 FEP30GP-E3/45 Vishay General Semiconductor - Diodes Division fep30xp-e3.pdf Description: DIODE ARRAY GP 400V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FES16GT/45 FES16GT/45 Vishay General Semiconductor - Diodes Division FES16AT-16JT.pdf Description: DIODE STANDARD 400V 16A TO220AC
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 400 V
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FES8DT/45 FES8DT/45 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 8A TO220AC
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
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FES8GT/45 FES8GT/45 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FES8JT/45 FES8JT/45 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBL01/1 GBL01/1 Vishay General Semiconductor - Diodes Division gbl005.pdf Description: BRIDGE RECT 1PHASE 100V 3A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC104-E4/51 GBPC104-E4/51 Vishay General Semiconductor - Diodes Division GBPC1005-GBPC110.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBPC1
Packaging: Box
Package / Case: 4-Square, GBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC1
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GBU4J-E3/45 GBU4J-E3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 600V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU4K-E3/45 GBU4K-E3/45 Vishay General Semiconductor - Diodes Division gbu4a.pdf Description: BRIDGE RECT 1PHASE 800V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU6D-E3/45 GBU6D-E3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE 1-PH GBU 200V 6A 150C
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 3.8 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
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GBU6J-E3/45 GBU6J-E3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 600V 3.8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 3.8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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GBU6K-E3/45 GBU6K-E3/45 Vishay General Semiconductor - Diodes Division gbu6a.pdf Description: BRIDGE RECT 1PHASE 800V 3.8A GBU
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 3.8 A
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GBU8J-E3/45 GBU8J-E3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU8K-E3/45 GBU8K-E3/45 Vishay General Semiconductor - Diodes Division gbu8a.pdf Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GL34J/1 GL34J/1 Vishay General Semiconductor - Diodes Division gl34a.pdf Description: DIODE STD 600V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GSIB1560\45 GSIB1560\45 Vishay General Semiconductor - Diodes Division gsib15xx.pdf Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GSIB-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Packaging: Tube
Produkt ist nicht verfügbar
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KBP02M/1 KBP02M/1 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Produkt ist nicht verfügbar
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KBP04M/1 KBP04M/1 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 400V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Produkt ist nicht verfügbar
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KBP06M-E4/1 KBP06M-E4/1 Vishay General Semiconductor - Diodes Division KBP005M_thru_10M%2C%203N246_thru_52.pdf Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBU4B-E4/51 KBU4B-E4/51 Vishay General Semiconductor - Diodes Division kbu4.pdf Description: BRIDGE RECT 1PHASE 100V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
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KBU4D-E4/51 KBU4D-E4/51 Vishay General Semiconductor - Diodes Division kbu4.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Tray
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KBU6D-E4/51 KBU6D-E4/51 Vishay General Semiconductor - Diodes Division kbu6.pdf Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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10+4.2 EUR
250+2.64 EUR
500+2.44 EUR
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KBU6G/1 KBU6G/1 Vishay General Semiconductor - Diodes Division kbu6.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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KBU6K-E4/51 KBU6K-E4/51 Vishay General Semiconductor - Diodes Division kbu6.pdf Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBU8B-E4/51 KBU8B-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 100V 8A KBU
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Tray
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3+8.45 EUR
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KBU8G-E4/51 KBU8G-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBU8J-E4/51 KBU8J-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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KBU8K-E4/51 KBU8K-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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10+5.61 EUR
250+3.61 EUR
500+3.35 EUR
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KBU8M-E4/51 KBU8M-E4/51 Vishay General Semiconductor - Diodes Division kbu8.pdf Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MB6S-E3/80 MB6S-E3/80 Vishay General Semiconductor - Diodes Division mb2s.pdf Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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6000+0.27 EUR
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MBR10H100/45 MBR10H100/45 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 10A TO220-3
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBR20H100CT/45 MBR20H100CT/45 Vishay General Semiconductor - Diodes Division MBR%28B%2920h90CT%2C100CT_Rev05.pdf Description: DIODE ARR SCHOT 100V 10A TO2203
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBR3060PT-E3/45 MBR3060PT-E3/45 Vishay General Semiconductor - Diodes Division mbr3035p.pdf Description: DIODE ARR SCHOTT 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 mA @ 60 V
Produkt ist nicht verfügbar
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MBR4060PT-E3/45 MBR4060PT-E3/45 Vishay General Semiconductor - Diodes Division MBR3035-3060PT.pdf Description: DIODE ARR SCHOTT 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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MBR760/45 MBR760/45 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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MBRB10H100/45 MBRB10H100/45 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 10A TO263AB
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBRB10H100CT/31 MBRB10H100CT/31 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOTT 100V 5A TO263AB
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Produkt ist nicht verfügbar
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MBRB20H100CT/45 MBRB20H100CT/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 100V TO263
Produkt ist nicht verfügbar
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MBRF10H100/45 MBRF10H100/45 Vishay General Semiconductor - Diodes Division mbr10hxx.pdf Description: DIODE SCHOTTKY 100V 10A ITO220AC
Produkt ist nicht verfügbar
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MBRF1635/45 MBRF1635/45 Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 35V 16A ITO220AC
Produkt ist nicht verfügbar
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MBRF2545CT/45 MBRF2545CT/45 Vishay General Semiconductor - Diodes Division mbr25xxct.pdf Description: DIODE ARR SCHOTTKY 45V ITO220AB
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRF2560CT/45 MBRF2560CT/45 Vishay General Semiconductor - Diodes Division mbr25xxct.pdf Description: DIODE ARRAY SCHOTTKY 60V ITO220
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Produkt ist nicht verfügbar
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MUR120/54 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 200V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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MUR160/54 MUR160/54 Vishay General Semiconductor - Diodes Division MUR1x0-E3%2C.pdf Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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P600B-E3/54 P600B-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE STANDARD 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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800+0.51 EUR
1600+0.5 EUR
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P600D/4 P600D/4 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE P600 200V 6A 175C
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P600J-E3/54 P600J-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE P600 600V 6A 175C
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 25600 Stücke:
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800+0.56 EUR
1600+0.53 EUR
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P600M-E3/54 P600M-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE STANDARD 1000V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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800+1.4 EUR
1600+1.29 EUR
2400+1.24 EUR
4000+1.18 EUR
5600+1.15 EUR
8000+1.11 EUR
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RGL34D/1 RGL34D/1 Vishay General Semiconductor - Diodes Division rgl34a.pdf Description: DIODE FAST MINIMELF 200V 150NS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYG21M/54 byg21k.pdf
BYG21M/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYG22D-E3/TR byg22a.pdf
BYG22D-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 79200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1800+0.2 EUR
3600+0.19 EUR
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BYM10-1000/1 bym10-xxx.pdf
BYM10-1000/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BYM10-400/1 bym10-xxx.pdf
BYM10-400/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EDF1AS/27 edf1as.pdf
EDF1AS/27
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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EDF1DM/45 edf1am.pdf
EDF1DM/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1A DFM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DFM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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EDF1DS/45 edf1as.pdf
EDF1DS/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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EGL41B/1 egl41.pdf
EGL41B/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EGL41G/1 egl41.pdf
EGL41G/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Produkt ist nicht verfügbar
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ES2G/1 es2f.pdf
ES2G/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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FEP30DP-E3/45 fep30xp-e3.pdf
FEP30DP-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.8 EUR
30+2.8 EUR
120+2.33 EUR
510+1.97 EUR
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FEP30GP-E3/45 fep30xp-e3.pdf
FEP30GP-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 15A TO247AD
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.63 EUR
30+2.66 EUR
120+2.4 EUR
510+2.34 EUR
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FES16GT/45 FES16AT-16JT.pdf
FES16GT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 16A TO220AC
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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FES8DT/45
FES8DT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Produkt ist nicht verfügbar
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FES8GT/45
FES8GT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FES8JT/45
FES8JT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBL01/1 gbl005.pdf
GBL01/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 3A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC104-E4/51 GBPC1005-GBPC110.pdf
GBPC104-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A GBPC1
Packaging: Box
Package / Case: 4-Square, GBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC1
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GBU4J-E3/45 gbu4a.pdf
GBU4J-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.31 EUR
10+2.78 EUR
100+1.91 EUR
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GBU4K-E3/45 gbu4a.pdf
GBU4K-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 201 Stücke:
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AnzahlPreis
5+4.1 EUR
20+2.34 EUR
100+1.81 EUR
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GBU6D-E3/45 gbu6a.pdf
GBU6D-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE 1-PH GBU 200V 6A 150C
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Average Rectified (Io): 3.8 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
auf Bestellung 818 Stücke:
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AnzahlPreis
6+3.5 EUR
20+2.13 EUR
100+1.69 EUR
500+1.39 EUR
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GBU6J-E3/45 gbu6a.pdf
GBU6J-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.8A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 3.8 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.93 EUR
20+2.48 EUR
100+2.14 EUR
500+1.72 EUR
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GBU6K-E3/45 gbu6a.pdf
GBU6K-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.8A GBU
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 3.8 A
auf Bestellung 728 Stücke:
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4+4.73 EUR
20+1.7 EUR
100+1.61 EUR
500+1.57 EUR
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GBU8J-E3/45 gbu8a.pdf
GBU8J-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 444 Stücke:
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AnzahlPreis
5+4.15 EUR
20+2.38 EUR
100+1.84 EUR
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GBU8K-E3/45 gbu8a.pdf
GBU8K-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.9A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 3189 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.26 EUR
20+2.44 EUR
100+1.9 EUR
500+1.53 EUR
1000+1.41 EUR
2000+1.32 EUR
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GL34J/1 gl34a.pdf
GL34J/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 600V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GSIB1560\45 gsib15xx.pdf
GSIB1560\45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GSIB-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Packaging: Tube
Produkt ist nicht verfügbar
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KBP02M/1 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP02M/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Produkt ist nicht verfügbar
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KBP04M/1 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP04M/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Bulk
Produkt ist nicht verfügbar
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KBP06M-E4/1 KBP005M_thru_10M%2C%203N246_thru_52.pdf
KBP06M-E4/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.5A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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KBU4B-E4/51 kbu4.pdf
KBU4B-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
auf Bestellung 496 Stücke:
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AnzahlPreis
3+6.16 EUR
10+5.16 EUR
250+3.95 EUR
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KBU4D-E4/51 kbu4.pdf
KBU4D-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Tray
auf Bestellung 435 Stücke:
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AnzahlPreis
3+6.16 EUR
10+5.16 EUR
25+4.87 EUR
80+4.18 EUR
250+3.95 EUR
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KBU6D-E4/51 kbu6.pdf
KBU6D-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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AnzahlPreis
3+6.37 EUR
10+4.2 EUR
250+2.64 EUR
500+2.44 EUR
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KBU6G/1 kbu6.pdf
KBU6G/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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KBU6K-E4/51 kbu6.pdf
KBU6K-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 12 Stücke:
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AnzahlPreis
3+8.4 EUR
10+5.61 EUR
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KBU8B-E4/51 kbu8.pdf
KBU8B-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Tray
auf Bestellung 126 Stücke:
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AnzahlPreis
3+8.45 EUR
10+5.64 EUR
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KBU8G-E4/51 kbu8.pdf
KBU8G-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBU8J-E4/51 kbu8.pdf
KBU8J-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 50 Stücke:
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AnzahlPreis
3+8.4 EUR
10+5.61 EUR
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KBU8K-E4/51 kbu8.pdf
KBU8K-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 834 Stücke:
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AnzahlPreis
3+8.4 EUR
10+5.61 EUR
250+3.61 EUR
500+3.35 EUR
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KBU8M-E4/51 kbu8.pdf
KBU8M-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MB6S-E3/80 mb2s.pdf
MB6S-E3/80
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 8605 Stücke:
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AnzahlPreis
3000+0.29 EUR
6000+0.27 EUR
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MBR10H100/45
MBR10H100/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO220-3
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBR20H100CT/45 MBR%28B%2920h90CT%2C100CT_Rev05.pdf
MBR20H100CT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO2203
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MBR3060PT-E3/45 mbr3035p.pdf
MBR3060PT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 mA @ 60 V
Produkt ist nicht verfügbar
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MBR4060PT-E3/45 MBR3035-3060PT.pdf
MBR4060PT-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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MBR760/45
MBR760/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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MBRB10H100/45
MBRB10H100/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO263AB
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBRB10H100CT/31
MBRB10H100CT/31
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AB
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Produkt ist nicht verfügbar
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MBRB20H100CT/45
MBRB20H100CT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO263
Produkt ist nicht verfügbar
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MBRF10H100/45 mbr10hxx.pdf
MBRF10H100/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A ITO220AC
Produkt ist nicht verfügbar
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MBRF1635/45 mbrf16xx.pdf
MBRF1635/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A ITO220AC
Produkt ist nicht verfügbar
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MBRF2545CT/45 mbr25xxct.pdf
MBRF2545CT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 45V ITO220AB
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 12.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Bulk
Produkt ist nicht verfügbar
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MBRF2560CT/45 mbr25xxct.pdf
MBRF2560CT/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V ITO220
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Produkt ist nicht verfügbar
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MUR120/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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MUR160/54 MUR1x0-E3%2C.pdf
MUR160/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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P600B-E3/54 p600a.pdf
P600B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 17600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+0.51 EUR
1600+0.5 EUR
Mindestbestellmenge: 800 Stücke
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P600D/4 p600a.pdf
P600D/4
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE P600 200V 6A 175C
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P600J-E3/54 p600a.pdf
P600J-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE P600 600V 6A 175C
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 25600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+0.56 EUR
1600+0.53 EUR
Mindestbestellmenge: 800 Stücke
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P600M-E3/54 p600a.pdf
P600M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 45600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+1.4 EUR
1600+1.29 EUR
2400+1.24 EUR
4000+1.18 EUR
5600+1.15 EUR
8000+1.11 EUR
Mindestbestellmenge: 800 Stücke
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RGL34D/1 rgl34a.pdf
RGL34D/1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FAST MINIMELF 200V 150NS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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