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8EWF06STRR 8EWF06STRR Vishay General Semiconductor - Diodes Division 8EWF..S.pdf Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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8EWF10STRL 8EWF10STRL Vishay General Semiconductor - Diodes Division 8EWF..S,%201000%20to%201200V.pdf Description: DIODE GEN PURP 1KV 8A DPAK
Produkt ist nicht verfügbar
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8EWF12STR 8EWF12STR Vishay General Semiconductor - Diodes Division 8EWF..S%2C%201000%20to%201200V.pdf Description: DIODE GEN PURP 1.2KV 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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8EWS08STRL 8EWS08STRL Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE STANDARD 800V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar
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8EWS08STR 8EWS08STR Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE STANDARD 800V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar
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8EWS10S 8EWS10S Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE GEN PURP 1KV 8A DPAK
Produkt ist nicht verfügbar
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8EWS10STRL 8EWS10STRL Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE GEN PURP 1KV 8A DPAK
Produkt ist nicht verfügbar
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8EWS12STRL 8EWS12STRL Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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8TQ080STRL 8TQ080STRL Vishay General Semiconductor - Diodes Division 8TQ.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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8TQ080STRR 8TQ080STRR Vishay General Semiconductor - Diodes Division 8TQ.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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8TQ100STRL 8TQ100STRL Vishay General Semiconductor - Diodes Division 8TQ.pdf Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Produkt ist nicht verfügbar
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VS-90SQ030 VS-90SQ030 Vishay General Semiconductor - Diodes Division VS-90SQ%28M3%29.pdf Description: DIODE SCHOTTKY 30V 9A DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Produkt ist nicht verfügbar
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VS-90SQ030TR VS-90SQ030TR Vishay General Semiconductor - Diodes Division VS-90SQ%28M3%29.pdf Description: DIODE SCHOTTKY 30V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Produkt ist nicht verfügbar
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VS-90SQ035TR VS-90SQ035TR Vishay General Semiconductor - Diodes Division VS-90SQ(M3).pdf Description: DIODE SCHOTTKY 35V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V
Produkt ist nicht verfügbar
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VS-90SQ040TR VS-90SQ040TR Vishay General Semiconductor - Diodes Division VS-90SQ%28M3%29.pdf Description: DIODE SCHOTTKY 40V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Produkt ist nicht verfügbar
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92MT120KB Vishay General Semiconductor - Diodes Division MT,KB%20Series55,90,110A.pdf Description: BRIDGE RECT 3PHASE 1.2KV 90A MTK
Produkt ist nicht verfügbar
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VS-GBPC2506W VS-GBPC2506W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
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VS-GBPC2504W VS-GBPC2504W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
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100+7.18 EUR
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VS-GBPC2510W VS-GBPC2510W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
Produkt ist nicht verfügbar
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VS-GBPC3504W VS-GBPC3504W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
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VS-GBPC3506W VS-GBPC3506W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
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VS-GBPC3508W VS-GBPC3508W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
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VS-GBPC3510W VS-GBPC3510W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
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VS-GBPC3512W VS-GBPC3512W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 1.2KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
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1+22.3 EUR
10+15.46 EUR
50+12.53 EUR
100+11.59 EUR
500+9.95 EUR
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HFA04TB60STRL HFA04TB60STRL Vishay General Semiconductor - Diodes Division HFA04TB60S.pdf Description: DIODE STANDARD 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
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HFA04TB60STRR HFA04TB60STRR Vishay General Semiconductor - Diodes Division HFA04TB60S.pdf Description: DIODE STANDARD 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
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HFA06TB120STRL HFA06TB120STRL Vishay General Semiconductor - Diodes Division HFA06TB120S.pdf Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA06TB120STRR HFA06TB120STRR Vishay General Semiconductor - Diodes Division HFA06TB120S.pdf Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA08TA60CSTRL HFA08TA60CSTRL Vishay General Semiconductor - Diodes Division HFA08TA60CS.pdf Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
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HFA08TB120STRL HFA08TB120STRL Vishay General Semiconductor - Diodes Division HFA08TB120S.pdf Description: DIODE STANDARD 1200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA08TB120STRR HFA08TB120STRR Vishay General Semiconductor - Diodes Division HFA08TB120S.pdf Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA08TB60STRR HFA08TB60STRR Vishay General Semiconductor - Diodes Division HFA08TB60S.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA12PA120C HFA12PA120C Vishay General Semiconductor - Diodes Division HFA12PA120C.pdf Description: DIODE ARRAY GP 1200V 6A TO-247AC
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HFA15TB60STRL HFA15TB60STRL Vishay General Semiconductor - Diodes Division HFA15TB60S.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HFA16TA60CSTRL HFA16TA60CSTRL Vishay General Semiconductor - Diodes Division HFA16TA60CS.pdf Description: DIODE ARRAY GP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA16TA60CSTRR HFA16TA60CSTRR Vishay General Semiconductor - Diodes Division HFA16TA60CS.pdf Description: DIODE ARRAY GP 600V 8AD2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA16TB120S HFA16TB120S Vishay General Semiconductor - Diodes Division HFA16TB120S.pdf Description: DIODE STANDARD 1200V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA16TB120STRL HFA16TB120STRL Vishay General Semiconductor - Diodes Division HFA16TB120S.pdf Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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HFA16TB120STRR HFA16TB120STRR Vishay General Semiconductor - Diodes Division HFA16TB120S.pdf Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA25TB60STRL HFA25TB60STRL Vishay General Semiconductor - Diodes Division HFA25TB60S%20Series.pdf Description: DIODE STANDARD 600V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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HFA30TA60CSTRL HFA30TA60CSTRL Vishay General Semiconductor - Diodes Division HFA30TA60CS.pdf Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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HFA30TA60CSTRR HFA30TA60CSTRR Vishay General Semiconductor - Diodes Division HFA30TA60CS.pdf Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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VSD3913R VSD3913R Vishay General Semiconductor - Diodes Division IRD3899,IRD3909%20Series.pdf Description: DIODE GEN PURP 400V 30A DO203AB
Produkt ist nicht verfügbar
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IRKH57/08A Vishay General Semiconductor - Diodes Division irk.41,.56.pdf Description: SCR MOD PWR 800V 55A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 2)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 135 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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VSKHF180-12HK VSKHF180-12HK Vishay General Semiconductor - Diodes Division VSKxF180xxP_Series.pdf Description: SCR MOD PWR 1200V 180A MAGNAPAK
Produkt ist nicht verfügbar
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VSKHF200-12HJ VSKHF200-12HJ Vishay General Semiconductor - Diodes Division VSK.F200..P_Series.pdf Description: SCR MODULE 1.2KV 444A 3-MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7600A, 8000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 444 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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VSKHF200-12HK VSKHF200-12HK Vishay General Semiconductor - Diodes Division VSK.F200..P_Series.pdf Description: SCR MOD PWR 1200V 200A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7600A, 8000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 444 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IRKL72/08A Vishay General Semiconductor - Diodes Division IRK%2071,.91.pdf Description: SCR DBL HISCR 800V 70A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 2)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1665A, 1740A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 165 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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VSKLF180-12HK VSKLF180-12HK Vishay General Semiconductor - Diodes Division VSKxF180xxP_Series.pdf Description: SCR DBL HISCR 1200V 180A MAGNPAK
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VSKLF200-04HK VSKLF200-04HK Vishay General Semiconductor - Diodes Division VSK.F200..P_Series.pdf Description: SCR DBL HISCR 400V 200A MAGNAPAK
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IRKT106/12A Vishay General Semiconductor - Diodes Division irkt105.pdf Description: SCR MODULE 1.2KV 235A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1785A, 1870A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 105 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IRKT106/14A Vishay General Semiconductor - Diodes Division irkt105.pdf Description: SCR MODULE 1.4KV 235A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1785A, 1870A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 105 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
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IRKT106/16A Vishay General Semiconductor - Diodes Division irkt105.pdf Description: SCR MODULE 1.6KV 235A ADD-A-PAK
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IRKT27/08A Vishay General Semiconductor - Diodes Division irkt26.pdf Description: SCR MODULE 800V 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 800 V
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IRKT27/10A Vishay General Semiconductor - Diodes Division irkt26.pdf Description: SCR MODULE 1KV 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1 kV
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IRKT27/12A Vishay General Semiconductor - Diodes Division irkt26.pdf Description: SCR MODULE 1.2KV 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.2 kV
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IRKT27/16A Vishay General Semiconductor - Diodes Division irkt26.pdf Description: SCR MODULE 1.6KV 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.6 kV
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IRKT42/08A Vishay General Semiconductor - Diodes Division irk.41%2C.56.pdf Description: SCR MODULE 800V 100A ADD-A-PAK
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IRKT42/10A Vishay General Semiconductor - Diodes Division irk.41%2C.56.pdf Description: SCR MODULE 1KV 100A ADD-A-PAK
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IRKT42/12A Vishay General Semiconductor - Diodes Division irk.41%2C.56.pdf Description: SCR MODULE 1.2KV 100A ADD-A-PAK
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8EWF06STRR 8EWF..S.pdf
8EWF06STRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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8EWF10STRL 8EWF..S,%201000%20to%201200V.pdf
8EWF10STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK
Produkt ist nicht verfügbar
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8EWF12STR 8EWF..S%2C%201000%20to%201200V.pdf
8EWF12STR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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8EWS08STRL 8EWSxxS.pdf
8EWS08STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar
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8EWS08STR 8EWSxxS.pdf
8EWS08STR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar
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8EWS10S 8EWSxxS.pdf
8EWS10S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK
Produkt ist nicht verfügbar
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8EWS10STRL 8EWSxxS.pdf
8EWS10STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK
Produkt ist nicht verfügbar
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8EWS12STRL 8EWSxxS.pdf
8EWS12STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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8TQ080STRL 8TQ.pdf
8TQ080STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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8TQ080STRR 8TQ.pdf
8TQ080STRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Produkt ist nicht verfügbar
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8TQ100STRL 8TQ.pdf
8TQ100STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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VS-90SQ030 VS-90SQ%28M3%29.pdf
VS-90SQ030
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 9A DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Produkt ist nicht verfügbar
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VS-90SQ030TR VS-90SQ%28M3%29.pdf
VS-90SQ030TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Produkt ist nicht verfügbar
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VS-90SQ035TR VS-90SQ(M3).pdf
VS-90SQ035TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-90SQ040TR VS-90SQ%28M3%29.pdf
VS-90SQ040TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
92MT120KB MT,KB%20Series55,90,110A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.2KV 90A MTK
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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VS-GBPC2506W vs-gbpc25.pdf
VS-GBPC2506W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.45 EUR
10+9.52 EUR
Mindestbestellmenge: 2 Stücke
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VS-GBPC2504W vs-gbpc25.pdf
VS-GBPC2504W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.41 EUR
10+9.78 EUR
100+7.18 EUR
Mindestbestellmenge: 2 Stücke
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VS-GBPC2510W vs-gbpc25.pdf
VS-GBPC2510W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-GBPC3504W vs-gbpc25.pdf
VS-GBPC3504W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.85 EUR
10+15.14 EUR
50+12.27 EUR
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VS-GBPC3506W vs-gbpc25.pdf
VS-GBPC3506W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.85 EUR
10+15.14 EUR
50+12.27 EUR
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VS-GBPC3508W vs-gbpc25.pdf
VS-GBPC3508W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.85 EUR
10+15.14 EUR
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VS-GBPC3510W vs-gbpc25.pdf
VS-GBPC3510W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.38 EUR
10+15.53 EUR
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VS-GBPC3512W vs-gbpc25.pdf
VS-GBPC3512W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.3 EUR
10+15.46 EUR
50+12.53 EUR
100+11.59 EUR
500+9.95 EUR
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HFA04TB60STRL HFA04TB60S.pdf
HFA04TB60STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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HFA04TB60STRR HFA04TB60S.pdf
HFA04TB60STRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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HFA06TB120STRL HFA06TB120S.pdf
HFA06TB120STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA06TB120STRR HFA06TB120S.pdf
HFA06TB120STRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA08TA60CSTRL HFA08TA60CS.pdf
HFA08TA60CSTRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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HFA08TB120STRL HFA08TB120S.pdf
HFA08TB120STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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HFA08TB120STRR HFA08TB120S.pdf
HFA08TB120STRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA08TB60STRR HFA08TB60S.pdf
HFA08TB60STRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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HFA12PA120C HFA12PA120C.pdf
HFA12PA120C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 1200V 6A TO-247AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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HFA15TB60STRL HFA15TB60S.pdf
HFA15TB60STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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HFA16TA60CSTRL HFA16TA60CS.pdf
HFA16TA60CSTRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA16TA60CSTRR HFA16TA60CS.pdf
HFA16TA60CSTRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8AD2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA16TB120S HFA16TB120S.pdf
HFA16TB120S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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HFA16TB120STRL HFA16TB120S.pdf
HFA16TB120STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA16TB120STRR HFA16TB120S.pdf
HFA16TB120STRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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HFA25TB60STRL HFA25TB60S%20Series.pdf
HFA25TB60STRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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HFA30TA60CSTRL HFA30TA60CS.pdf
HFA30TA60CSTRL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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HFA30TA60CSTRR HFA30TA60CS.pdf
HFA30TA60CSTRR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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VSD3913R IRD3899,IRD3909%20Series.pdf
VSD3913R
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 30A DO203AB
Produkt ist nicht verfügbar
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IRKH57/08A irk.41,.56.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MOD PWR 800V 55A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 2)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 135 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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VSKHF180-12HK VSKxF180xxP_Series.pdf
VSKHF180-12HK
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MOD PWR 1200V 180A MAGNAPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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VSKHF200-12HJ VSK.F200..P_Series.pdf
VSKHF200-12HJ
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.2KV 444A 3-MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7600A, 8000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 444 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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VSKHF200-12HK VSK.F200..P_Series.pdf
VSKHF200-12HK
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MOD PWR 1200V 200A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7600A, 8000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 444 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IRKL72/08A IRK%2071,.91.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR DBL HISCR 800V 70A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 2)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1665A, 1740A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 165 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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VSKLF180-12HK VSKxF180xxP_Series.pdf
VSKLF180-12HK
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR DBL HISCR 1200V 180A MAGNPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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VSKLF200-04HK VSK.F200..P_Series.pdf
VSKLF200-04HK
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR DBL HISCR 400V 200A MAGNAPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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IRKT106/12A irkt105.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.2KV 235A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1785A, 1870A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 105 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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IRKT106/14A irkt105.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.4KV 235A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1785A, 1870A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 105 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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IRKT106/16A irkt105.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.6KV 235A ADD-A-PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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IRKT27/08A irkt26.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 800V 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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IRKT27/10A irkt26.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1KV 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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IRKT27/12A irkt26.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.2KV 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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IRKT27/16A irkt26.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.6KV 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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IRKT42/08A irk.41%2C.56.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 800V 100A ADD-A-PAK
Produkt ist nicht verfügbar
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IRKT42/10A irk.41%2C.56.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1KV 100A ADD-A-PAK
Produkt ist nicht verfügbar
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IRKT42/12A irk.41%2C.56.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.2KV 100A ADD-A-PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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