Die Produkte vishay general semiconductor - diodes division

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UF5401-E3/54 UF5401-E3/54 uf5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO201AD
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
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19+ 1.44 EUR
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500+ 0.87 EUR
BYG22DHE3/TR BYG22DHE3/TR byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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SL23-E3/52T SL23-E3/52T sl22.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 2A DO214AA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 2 A
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 30 V
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SS3P6L-M3/86A SS3P6L-M3/86A ss3p6l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A TO277A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A TO277A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Package / Case: TO-277, 3-PowerDFN
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Packaging: Cut Tape (CT)
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EGF1D-E3/67A EGF1D-E3/67A egf1a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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EGF1A-E3/67A EGF1A-E3/67A egf1a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO214BA
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: EGF1
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: EGF1
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BY203-20STR BY203-20STR by20312s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 2KV 250MA SOD57
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 2KV 250MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Packaging: Cut Tape (CT)
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SS8PH10-M3/86A SS8PH10-M3/86A ss8ph10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 8A TO277A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 8A TO277A
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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500+ 0.84 EUR
1N5627GP-E3/54 1N5627GP-E3/54 1N5624-27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO201AD
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
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1N5625GP-E3/54 1N5625GP-E3/54 1N5624-27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SGL41-20-E3/96 SGL41-20-E3/96 bym13.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 1A DO213AB
Current - Reverse Leakage @ Vr: 500µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SGL41
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SGL41
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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SGL41-40-E3/96 SGL41-40-E3/96 bym13.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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VS-MBRS340TRPBF VS-MBRS340TRPBF VS-MBRS340TRPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 3A SMC
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
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SSC54-E3/57T SSC54-E3/57T ssc53l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 5A DO214AB
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 5A DO214AB
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
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SGL41-60-E3/96 SGL41-60-E3/96 bym13.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: GL41 (DO-213AB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: GL41 (DO-213AB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
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RS3J-E3/57T RS3J-E3/57T rs3a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO214AB
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO214AB
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
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RS3B-E3/57T RS3B-E3/57T rs3a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Manufacturer: Vishay General Semiconductor - Diodes Division
Mounting Type: Surface Mount
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Base Part Number: RS3
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO214AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS3
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
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RS3K-E3/57T RS3K-E3/57T rs3a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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AS3PG-M3/86A AS3PG-M3/86A as3pd.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 2.1A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: AS3
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Current - Average Rectified (Io): 2.1A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 2.1A TO277A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.2µs
Base Part Number: AS3
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Current - Average Rectified (Io): 2.1A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Package / Case: TO-277, 3-PowerDFN
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BZT03C47-TAP BZT03C47-TAP bzt03.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 39VWM 65.5VC SOD57
Type: Zener
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 65.5V
Voltage - Breakdown (Min): 44V
Unidirectional Channels: 1
Supplier Device Package: SOD-57
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 39V
Applications: General Purpose
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SMAJ11AHE3_A/H SMAJ11AHE3_A/H smaj50a.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 11VWM 18.2VC DO214AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 11V
Current - Peak Pulse (10/1000µs): 22A
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SMBJ24CD-M3/I SMBJ24CD-M3/I smbj5cdthrusmbj120cd.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 24VWM 38.4VC DO214AA
Voltage - Breakdown (Min): 27.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 24V
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 38.4V
Current - Peak Pulse (10/1000µs): 15.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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GP10M-E3/54 GP10M-E3/54 gp10a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Base Part Number: GP10
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
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RGL34A-E3/98 RGL34A-E3/98 rgl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 500MA DO213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
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22+ 1.22 EUR
25+ 1.04 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.47 EUR
EGP50G-E3/54 EGP50G-E3/54 EGP50A-G.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 5A GP20
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: GP20
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
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VS-30BQ060TRPBF VS-30BQ060TRPBF VS-30BQ060PBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A SMC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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VS-30BQ040TRPBF VS-30BQ040TRPBF VS-30BQ040PBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 3A SMC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
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VSB3200-M3/54 VSB3200-M3/54 packaging.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 3A DO201AD
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
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MUR440-E3/54 MUR440-E3/54 mur440-e3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 4A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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MURS340-E3/57T MURS340-E3/57T murs340.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO214AB
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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MURS340HE3/57T MURS340HE3/57T murs340.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO214AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 75 ns
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P600G-E3/54 P600G-E3/54 p600a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
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P600B-E3/54 P600B-E3/54 p600a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 6A P600
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
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GI750-E3/54 GI750-E3/54 gi750.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 6A P600
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: GI750
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 6A P600
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: GI750
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GI751-E3/54 GI751-E3/54 gi750.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 6A P600
Base Part Number: GI751
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
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GI752-E3/54 GI752-E3/54 gi750.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 6A P600
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: GI752
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GI754-E3/54 GI754-E3/54 gi750.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 6A P600
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
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P600K-E3/54 P600K-E3/54 p600a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 6A P600
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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P600D-E3/54 P600D-E3/54 p600a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 6A P600
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
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auf Bestellung 95 Stücke
Lieferzeit 21-28 Tag (e)
AU2PK-M3/86A AU2PK-M3/86A au2pm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 1.3A TO277A
Base Part Number: AU2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
Current - Average Rectified (Io): 1.3A (DC)
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
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RGP25M-E3/54 RGP25M-E3/54 rgp25a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 2.5A DO201
Base Part Number: RGP25
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 2.5A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 2.5A DO201
Voltage - DC Reverse (Vr) (Max): 1000V
Base Part Number: RGP25
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 2.5A
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Lieferzeit 21-28 Tag (e)
VS-5EWH06FNTR-M3 VS-5EWH06FNTR-M3 vs-5ewh06fn-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 5A DPAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 5A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 22000 Stücke
Lieferzeit 21-28 Tag (e)
2000+ 0.93 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 5A DPAK
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 5A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Lieferzeit 21-28 Tag (e)
12+ 2.31 EUR
13+ 2.05 EUR
100+ 1.57 EUR
500+ 1.24 EUR
1000+ 0.99 EUR
VS-6EWH06FNTR-M3 VS-6EWH06FNTR-M3 vs-6ewh06fn-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 6A DPAK
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Lieferzeit 21-28 Tag (e)
2000+ 0.97 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 6A DPAK
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 6A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2339 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.42 EUR
13+ 2.13 EUR
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500+ 1.29 EUR
1000+ 1.03 EUR
MURS320-E3/57T MURS320-E3/57T murs320.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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1N5625-TR 1N5625-TR 1n5624.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 1.17 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 3A SOD64
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 11054 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.6 EUR
12+ 2.31 EUR
100+ 1.8 EUR
500+ 1.49 EUR
1000+ 1.17 EUR
SS10P4-M3/86A SS10P4-M3/86A ss10p4.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Lieferzeit 21-28 Tag (e)
1500+ 0.94 EUR
3000+ 0.88 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 28209 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.21 EUR
14+ 1.94 EUR
100+ 1.49 EUR
500+ 1.18 EUR
SL44-E3/57T SL44-E3/57T sl42.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 4A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 4 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Diode Type: Schottky
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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1N5627-TR 1N5627-TR 1n5624.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 7.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12500 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 1.27 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 3A SOD64
Package / Case: SOD-64, Axial
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 7.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12631 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.78 EUR
11+ 2.5 EUR
100+ 1.95 EUR
500+ 1.61 EUR
1000+ 1.27 EUR
1N5418TR 1N5418TR 1n5417.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 3A SOD64
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Operating Temperature - Junction: -55°C ~ 175°C
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 22500 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 1.31 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 3A SOD64
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 24916 Stücke
Lieferzeit 21-28 Tag (e)
10+ 2.89 EUR
11+ 2.58 EUR
100+ 2.01 EUR
500+ 1.66 EUR
1000+ 1.31 EUR
BY228TR BY228TR by228.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1500V 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 20 µs
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BYT56M-TR BYT56M-TR byt56a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1000V 3A SOD64
Base Part Number: BYT56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
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auf Bestellung 7500 Stücke
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Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1000V 3A SOD64
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYT56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 8102 Stücke
Lieferzeit 21-28 Tag (e)
RGP30M-E3/54 RGP30M-E3/54 rgp30a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
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SRP600B-E3/54 SRP600B-E3/54 SRP600A,B,D,G,J,K.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 6A P600
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SRP600
Operating Temperature - Junction: -50°C ~ 125°C
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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UF5401-E3/54 uf5400.pdf
UF5401-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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UF5401-E3/54 uf5400.pdf
UF5401-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
auf Bestellung 625 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
17+ 1.61 EUR
19+ 1.44 EUR
100+ 1.1 EUR
500+ 0.87 EUR
BYG22DHE3/TR byg22a.pdf
BYG22DHE3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SL23-E3/52T sl22.pdf
SL23-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 400 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 2 A
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS3P6L-M3/86A ss3p6l.pdf
SS3P6L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A TO277A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 3A
auf Bestellung 10500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14652 Stücke - Preis und Lieferfrist anzeigen
1500+ 0.66 EUR
3000+ 0.6 EUR
7500+ 0.58 EUR
SS3P6L-M3/86A ss3p6l.pdf
SS3P6L-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A TO277A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Package / Case: TO-277, 3-PowerDFN
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Packaging: Cut Tape (CT)
auf Bestellung 11850 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13302 Stücke - Preis und Lieferfrist anzeigen
16+ 1.72 EUR
18+ 1.45 EUR
100+ 1.08 EUR
500+ 0.85 EUR
EGF1D-E3/67A egf1a.pdf
EGF1D-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
EGF1A-E3/67A egf1a.pdf
EGF1A-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: EGF1
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8216 Stücke - Preis und Lieferfrist anzeigen
EGF1A-E3/67A egf1a.pdf
EGF1A-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: EGF1
auf Bestellung 8216 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
BY203-20STR by20312s.pdf
BY203-20STR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 2KV 250MA SOD57
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22318 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.86 EUR
BY203-20STR by20312s.pdf
BY203-20STR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 2KV 250MA SOD57
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 250mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Packaging: Cut Tape (CT)
auf Bestellung 22318 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
13+ 2.16 EUR
14+ 1.9 EUR
100+ 1.46 EUR
500+ 1.15 EUR
1000+ 0.92 EUR
2000+ 0.86 EUR
SS8PH10-M3/86A ss8ph10.pdf
SS8PH10-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
auf Bestellung 67314 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 144687 Stücke - Preis und Lieferfrist anzeigen
1500+ 0.65 EUR
3000+ 0.59 EUR
7500+ 0.58 EUR
SS8PH10-M3/86A ss8ph10.pdf
SS8PH10-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 67314 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 144687 Stücke - Preis und Lieferfrist anzeigen
16+ 1.66 EUR
19+ 1.44 EUR
100+ 1.07 EUR
500+ 0.84 EUR
1N5627GP-E3/54 1N5624-27.pdf
1N5627GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5625GP-E3/54 1N5624-27.pdf
1N5625GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO201AD
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SGL41-20-E3/96 bym13.pdf
SGL41-20-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO213AB
Current - Reverse Leakage @ Vr: 500µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SGL41
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
auf Bestellung 16500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17675 Stücke - Preis und Lieferfrist anzeigen
SGL41-20-E3/96 bym13.pdf
SGL41-20-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SGL41
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 17675 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16500 Stücke - Preis und Lieferfrist anzeigen
SGL41-40-E3/96 bym13.pdf
SGL41-40-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14793 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS340TRPBF VS-MBRS340TRPbF.pdf
VS-MBRS340TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A SMC
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12 Stücke - Preis und Lieferfrist anzeigen
SSC54-E3/57T ssc53l.pdf
SSC54-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 38250 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 278699 Stücke - Preis und Lieferfrist anzeigen
850+ 0.86 EUR
1700+ 0.69 EUR
2550+ 0.64 EUR
SSC54-E3/57T ssc53l.pdf
SSC54-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
auf Bestellung 38302 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 278647 Stücke - Preis und Lieferfrist anzeigen
17+ 1.61 EUR
19+ 1.41 EUR
100+ 1.08 EUR
SGL41-60-E3/96 bym13.pdf
SGL41-60-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: GL41 (DO-213AB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 941 Stücke - Preis und Lieferfrist anzeigen
SGL41-60-E3/96 bym13.pdf
SGL41-60-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO213AB
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: GL41 (DO-213AB)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
auf Bestellung 941 Stücke
Lieferzeit 21-28 Tag (e)
13+ 2.16 EUR
14+ 1.9 EUR
100+ 1.45 EUR
500+ 1.15 EUR
RS3J-E3/57T rs3a.pdf
RS3J-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO214AB
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 614 Stücke - Preis und Lieferfrist anzeigen
RS3J-E3/57T rs3a.pdf
RS3J-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO214AB
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
auf Bestellung 614 Stücke
Lieferzeit 21-28 Tag (e)
15+ 1.74 EUR
18+ 1.48 EUR
100+ 1.11 EUR
RS3B-E3/57T rs3a.pdf
RS3B-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Manufacturer: Vishay General Semiconductor - Diodes Division
Mounting Type: Surface Mount
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Base Part Number: RS3
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 850 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1455 Stücke - Preis und Lieferfrist anzeigen
RS3B-E3/57T rs3a.pdf
RS3B-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: RS3
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
auf Bestellung 1455 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 850 Stücke - Preis und Lieferfrist anzeigen
RS3K-E3/57T rs3a.pdf
RS3K-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 974 Stücke - Preis und Lieferfrist anzeigen
AS3PG-M3/86A as3pd.pdf
AS3PG-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2.1A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: AS3
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Current - Average Rectified (Io): 2.1A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4930 Stücke - Preis und Lieferfrist anzeigen
AS3PG-M3/86A as3pd.pdf
AS3PG-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2.1A TO277A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 1.2µs
Base Part Number: AS3
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Current - Average Rectified (Io): 2.1A (DC)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Package / Case: TO-277, 3-PowerDFN
auf Bestellung 696 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4234 Stücke - Preis und Lieferfrist anzeigen
BZT03C47-TAP bzt03.pdf
BZT03C47-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 39VWM 65.5VC SOD57
Type: Zener
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 65.5V
Voltage - Breakdown (Min): 44V
Unidirectional Channels: 1
Supplier Device Package: SOD-57
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 39V
Applications: General Purpose
auf Bestellung 3755 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.69 EUR
18+ 1.48 EUR
100+ 1.14 EUR
500+ 0.9 EUR
1000+ 0.72 EUR
2000+ 0.67 EUR
SMAJ11AHE3_A/H smaj50a.pdf
SMAJ11AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO214AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 11V
Current - Peak Pulse (10/1000µs): 22A
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ24CD-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ24CD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.4VC DO214AA
Voltage - Breakdown (Min): 27.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 24V
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 38.4V
Current - Peak Pulse (10/1000µs): 15.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 2057 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 57600 Stücke - Preis und Lieferfrist anzeigen
25+ 1.04 EUR
31+ 0.86 EUR
100+ 0.58 EUR
500+ 0.44 EUR
1000+ 0.33 EUR
GP10M-E3/54 gp10a.pdf
GP10M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Base Part Number: GP10
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 3µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2130 Stücke
Lieferzeit 21-28 Tag (e)
RGL34A-E3/98 rgl34a.pdf
RGL34A-E3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 500MA DO213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9856 Stücke - Preis und Lieferfrist anzeigen
22+ 1.22 EUR
25+ 1.04 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.47 EUR
EGP50G-E3/54 EGP50A-G.pdf
EGP50G-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 5A GP20
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: GP20
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30BQ060TRPBF VS-30BQ060PBF.pdf
VS-30BQ060TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A SMC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-30BQ040TRPBF VS-30BQ040PBF.pdf
VS-30BQ040TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A SMC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
VSB3200-M3/54 packaging.pdf
VSB3200-M3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3A DO201AD
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 60 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MUR440-E3/54 mur440-e3.pdf
MUR440-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 4A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
MURS340-E3/57T murs340.pdf
MURS340-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURS340HE3/57T murs340.pdf
MURS340HE3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 75 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P600G-E3/54 p600a.pdf
P600G-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 8800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10400 Stücke - Preis und Lieferfrist anzeigen
800+ 1.44 EUR
1600+ 1.13 EUR
P600G-E3/54 p600a.pdf
P600G-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
auf Bestellung 10400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8800 Stücke - Preis und Lieferfrist anzeigen
11+ 2.5 EUR
12+ 2.23 EUR
100+ 1.74 EUR
P600B-E3/54 p600a.pdf
P600B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A P600
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 17600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19594 Stücke - Preis und Lieferfrist anzeigen
800+ 1.44 EUR
1600+ 1.13 EUR
P600B-E3/54 p600a.pdf
P600B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
auf Bestellung 19594 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17600 Stücke - Preis und Lieferfrist anzeigen
11+ 2.5 EUR
12+ 2.23 EUR
100+ 1.74 EUR
GI750-E3/54 gi750.pdf
GI750-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: GI750
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3124 Stücke - Preis und Lieferfrist anzeigen
GI750-E3/54 gi750.pdf
GI750-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: GI750
auf Bestellung 3124 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
GI751-E3/54 gi750.pdf
GI751-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A P600
Base Part Number: GI751
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 100V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GI752-E3/54 gi750.pdf
GI752-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A P600
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: GI752
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2412 Stücke - Preis und Lieferfrist anzeigen
GI754-E3/54 gi750.pdf
GI754-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 6A P600
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P600K-E3/54 p600a.pdf
P600K-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 4800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8559 Stücke - Preis und Lieferfrist anzeigen
800+ 1.44 EUR
1600+ 1.13 EUR
P600K-E3/54 p600a.pdf
P600K-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 6A P600
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 5497 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7862 Stücke - Preis und Lieferfrist anzeigen
11+ 2.5 EUR
12+ 2.23 EUR
100+ 1.74 EUR
P600D-E3/54 p600a.pdf
P600D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 95 Stücke - Preis und Lieferfrist anzeigen
P600D-E3/54 p600a.pdf
P600D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A P600
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 95 Stücke
Lieferzeit 21-28 Tag (e)
AU2PK-M3/86A au2pm.pdf
AU2PK-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.3A TO277A
Base Part Number: AU2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
Current - Average Rectified (Io): 1.3A (DC)
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP25M-E3/54 rgp25a.pdf
RGP25M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2.5A DO201
Base Part Number: RGP25
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 2.5A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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RGP25M-E3/54 rgp25a.pdf
RGP25M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2.5A DO201
Voltage - DC Reverse (Vr) (Max): 1000V
Base Part Number: RGP25
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 2.5A
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
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VS-5EWH06FNTR-M3 vs-5ewh06fn-m3.pdf
VS-5EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DPAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 5A
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2000+ 0.93 EUR
VS-5EWH06FNTR-M3 vs-5ewh06fn-m3.pdf
VS-5EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DPAK
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 5A
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12+ 2.31 EUR
13+ 2.05 EUR
100+ 1.57 EUR
500+ 1.24 EUR
1000+ 0.99 EUR
VS-6EWH06FNTR-M3 vs-6ewh06fn-m3.pdf
VS-6EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DPAK
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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2000+ 0.97 EUR
VS-6EWH06FNTR-M3 vs-6ewh06fn-m3.pdf
VS-6EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DPAK
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-PAK (TO-252AA)
Current - Average Rectified (Io): 6A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
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11+ 2.42 EUR
13+ 2.13 EUR
100+ 1.63 EUR
500+ 1.29 EUR
1000+ 1.03 EUR
MURS320-E3/57T murs320.pdf
MURS320-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5625-TR 1n5624.pdf
1N5625-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
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2500+ 1.17 EUR
1N5625-TR 1n5624.pdf
1N5625-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
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10+ 2.6 EUR
12+ 2.31 EUR
100+ 1.8 EUR
500+ 1.49 EUR
1000+ 1.17 EUR
SS10P4-M3/86A ss10p4.pdf
SS10P4-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
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1500+ 0.94 EUR
3000+ 0.88 EUR
SS10P4-M3/86A ss10p4.pdf
SS10P4-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
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12+ 2.21 EUR
14+ 1.94 EUR
100+ 1.49 EUR
500+ 1.18 EUR
SL44-E3/57T sl42.pdf
SL44-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 4 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Diode Type: Schottky
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N5627-TR 1n5624.pdf
1N5627-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 7.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
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2500+ 1.27 EUR
1N5627-TR 1n5624.pdf
1N5627-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Package / Case: SOD-64, Axial
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 7.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
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10+ 2.78 EUR
11+ 2.5 EUR
100+ 1.95 EUR
500+ 1.61 EUR
1000+ 1.27 EUR
1N5418TR 1n5417.pdf
1N5418TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Supplier Device Package: SOD-64
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Operating Temperature - Junction: -55°C ~ 175°C
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2500+ 1.31 EUR
1N5418TR 1n5417.pdf
1N5418TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Packaging: Cut Tape (CT)
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10+ 2.89 EUR
11+ 2.58 EUR
100+ 2.01 EUR
500+ 1.66 EUR
1000+ 1.31 EUR
BY228TR by228.pdf
BY228TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 3A SOD64
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 20 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYT56M-TR byt56a.pdf
BYT56M-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Base Part Number: BYT56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
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BYT56M-TR byt56a.pdf
BYT56M-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYT56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-64
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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RGP30M-E3/54 rgp30a.pdf
RGP30M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SRP600B-E3/54 SRP600A,B,D,G,J,K.pdf
SRP600B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A P600
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
Current - Average Rectified (Io): 6A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SRP600
Operating Temperature - Junction: -50°C ~ 125°C
Supplier Device Package: P600
Package / Case: P600, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 100ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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