Die Produkte vishay general semiconductor - diodes division

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V40170C-M3/4W V40170C-M3/4W v40170c-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 170V TO220
Base Part Number: V40170
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -40°C ~ 175°C
Current - Reverse Leakage @ Vr: 250µA @ 170V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Voltage - DC Reverse (Vr) (Max): 170V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
V60170G-M3/4W V60170G-M3/4W v60170g-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 170V TO220
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: V60170
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -40°C ~ 175°C
Current - Reverse Leakage @ Vr: 450µA @ 170V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.02V @ 30A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 170V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
auf Bestellung 372 Stücke
Lieferzeit 21-28 Tag (e)
V40170PW-M3/4W V40170PW-M3/4W V40170PW-M3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 170V TO3PW
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 250µA @ 170V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PW
Base Part Number: V40170
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V10170C-M3/4W V10170C-M3/4W v10170c-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 170V TO220
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170V
Current - Average Rectified (Io) (per Diode): 5A
Voltage - Forward (Vf) (Max) @ If: 1.03V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 90µA @ 170V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: V10170
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V60170PW-M3/4W V60170PW-M3/4W V60170PW-M3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 170V TO3PW
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 170V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PW
Base Part Number: V60170
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-40MT160PBPBF VS-40MT160PBPBF 40M,70M,100MT1.0P.PbF.pdf Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 3P 1.6KV 45A 7-MTPB
Base Part Number: 40MT160
Supplier Device Package: 7-MTPB
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.51V @ 100A
Current - Average Rectified (Io): 45A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Active
Packaging: Bulk
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 174 Stücke - Preis und Lieferfrist anzeigen
SB340S-E3/54 SB340S-E3/54 SB320S_thru_SB360S.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 3A DO204AC
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AC (DO-15)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S3D-E3/57T S3D-E3/57T s3a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S3D
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
S3M-E3/57T S3M-E3/57T s3a.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 39100 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 320 Stücke - Preis und Lieferfrist anzeigen
850+ 0.58 EUR
1700+ 0.44 EUR
2550+ 0.4 EUR
5950+ 0.38 EUR
21250+ 0.36 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 39741 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 320 Stücke - Preis und Lieferfrist anzeigen
19+ 1.4 EUR
23+ 1.14 EUR
100+ 0.78 EUR
S3K-E3/57T S3K-E3/57T s3a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO214AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S3K
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 647 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO214AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S3K
auf Bestellung 233 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 647 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS1100TRPBF VS-MBRS1100TRPBF VS-MBRS190TRPBF_MBRS1100TRPBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1A SMB
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24 Stücke - Preis und Lieferfrist anzeigen
RGP02-20EHE3/73 RGP02-20EHE3/73 rgp02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 2KV 500MA DO204
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGF1J-E3/5CA RGF1J-E3/5CA rgf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214BA
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SB2H100-E3/73 SB2H100-E3/73 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19857 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1999 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19857 Stücke - Preis und Lieferfrist anzeigen
VS-10BQ040TRPBF VS-10BQ040TRPBF VS-10BQ040PbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A SMB
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SBYV27-100-E3/54 SBYV27-100-E3/54 sbyv27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 15 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 156000 Stücke - Preis und Lieferfrist anzeigen
4000+ 0.48 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
auf Bestellung 6499 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 156000 Stücke - Preis und Lieferfrist anzeigen
20+ 1.33 EUR
23+ 1.15 EUR
100+ 0.86 EUR
500+ 0.68 EUR
1000+ 0.52 EUR
2000+ 0.48 EUR
ES1PD-M3/84A ES1PD-M3/84A es1pb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO220AA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Base Part Number: ES1
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12811 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO220AA
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES1
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
auf Bestellung 4012 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12811 Stücke - Preis und Lieferfrist anzeigen
ES2D-E3/52T ES2D-E3/52T es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 58200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 635 Stücke - Preis und Lieferfrist anzeigen
750+ 0.56 EUR
1500+ 0.43 EUR
2250+ 0.39 EUR
5250+ 0.38 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 58354 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 635 Stücke - Preis und Lieferfrist anzeigen
24+ 1.12 EUR
28+ 0.96 EUR
100+ 0.71 EUR
ES2G-E3/52T ES2G-E3/52T es2f.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 158250 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4510 Stücke - Preis und Lieferfrist anzeigen
750+ 0.56 EUR
1500+ 0.43 EUR
2250+ 0.39 EUR
5250+ 0.38 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 2A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Part Status: Active
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
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28+ 0.96 EUR
100+ 0.71 EUR
ES2A-E3/52T ES2A-E3/52T es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 2A DO214AA
Base Part Number: ES2A
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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ES2B-E3/52T ES2B-E3/52T es2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: ES2
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY448GP-E3/54 BY448GP-E3/54 by448gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.65KV 1.5A DO204
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1650V
Reverse Recovery Time (trr): 20µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 1.5A
Manufacturer: Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max): 1650V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: BY448
Operating Temperature - Junction: -65°C ~ 175°C
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.65KV 1.5A DO204
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1650V
Reverse Recovery Time (trr): 20µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 1650V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BY448
Operating Temperature - Junction: -65°C ~ 175°C
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SB360-E3/54 SB360-E3/54 sb320.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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1400+ 0.53 EUR
2800+ 0.48 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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20+ 1.35 EUR
23+ 1.16 EUR
100+ 0.87 EUR
500+ 0.68 EUR
BYG22A-E3/TR3 BYG22A-E3/TR3 byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 1µA @ 50V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Avalanche
Base Part Number: BYG22
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 1µA @ 50V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BYG22
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EGP20B-E3/54 EGP20B-E3/54 egp20a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 2A DO204AC
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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EGP20G-E3/54 EGP20G-E3/54 egp20a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
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Lieferzeit 21-28 Tag (e)
12+ 2.31 EUR
13+ 2.05 EUR
100+ 1.57 EUR
500+ 1.24 EUR
1000+ 0.99 EUR
2000+ 0.93 EUR
GF1B-E3/67A GF1B-E3/67A gf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GF1G-E3/67A GF1G-E3/67A gf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214BA
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
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Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214BA
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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GF1A-E3/67A GF1A-E3/67A gf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO214BA
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO214BA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GF1
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
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BYM13-30-E3/96 BYM13-30-E3/96 bym13.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GL41 (DO-213AB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GL41 (DO-213AB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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Lieferzeit 21-28 Tag (e)
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BYM13-40-E3/96 BYM13-40-E3/96 bym13.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO213AB
Base Part Number: BYM13
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
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Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO213AB
Base Part Number: BYM13
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
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Lieferzeit 21-28 Tag (e)
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GF1D-E3/67A GF1D-E3/67A gf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM13-60-E3/96 BYM13-60-E3/96 bym13.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 1A DO213AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: GL41 (DO-213AB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BYM13
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Lieferzeit 21-28 Tag (e)
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VS-10BQ060TRPBF VS-10BQ060TRPBF VS-10BQ060PbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 1A SMB
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5406-E3/54 1N5406-E3/54 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 3A DO201AD
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N5407-E3/54 1N5407-E3/54 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO201AD
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5401-E3/54 1N5401-E3/54 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO201AD
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5403-E3/54 1N5403-E3/54 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 300V 3A DO201AD
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 300 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5402-E3/54 1N5402-E3/54 1n5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ESH2PD-M3/84A ESH2PD-M3/84A esh2pb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO220AA
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: ESH2
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 2A DO220AA
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: ESH2
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
Current - Average Rectified (Io): 2A
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
B360A-E3/61T B360A-E3/61T b360a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO214AC
Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
Current - Average Rectified (Io): 3A
Base Part Number: B360
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5060TR 1N5060TR 1n5059.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 2A SOD57
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 81 Stücke
Lieferzeit 21-28 Tag (e)
17+ 1.56 EUR
20+ 1.32 EUR
VS-10BQ030TRPBF VS-10BQ030TRPBF VS-10BQ030PbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5059TR 1N5059TR 1n5059.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A SOD57
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A SOD57
Reverse Recovery Time (trr): 4 µs
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 176 Stücke
Lieferzeit 21-28 Tag (e)
17+ 1.56 EUR
20+ 1.32 EUR
100+ 0.99 EUR
GF1M-E3/5CA GF1M-E3/5CA gf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO214BA
Base Part Number: GF1
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO214BA
Base Part Number: GF1
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Part Status: Active
Diode Type: Standard
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
auf Bestellung 161 Stücke
Lieferzeit 21-28 Tag (e)
VSB2200S-M3/54 VSB2200S-M3/54 VSB2200S.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 2A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY399P-E3/54 BY399P-E3/54 by396p.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY500-400-E3/54 BY500-400-E3/54 BY500-100-800.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 5A DO201AD
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY500-600-E3/54 BY500-600-E3/54 BY500-100-800.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 5A DO201AD
Package / Case: DO-201AD, Axial
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GI851-E3/54 GI851-E3/54 gi850.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRS130TRPBF VS-MBRS130TRPBF MBRS130LTRPBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SSB44-E3/52T SSB44-E3/52T ssb43l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 4A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 39750 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 84325 Stücke - Preis und Lieferfrist anzeigen
750+ 0.62 EUR
1500+ 0.48 EUR
2250+ 0.44 EUR
5250+ 0.42 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 4A DO214AA
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
auf Bestellung 39885 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 84325 Stücke - Preis und Lieferfrist anzeigen
21+ 1.25 EUR
25+ 1.06 EUR
100+ 0.79 EUR
SB340-E3/73 SB340-E3/73 sb320.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Supplier Device Package: DO-201AD
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
auf Bestellung 43000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
1000+ 0.45 EUR
2000+ 0.41 EUR
5000+ 0.39 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 3A DO201AD
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
auf Bestellung 136 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
27+ 0.98 EUR
100+ 0.73 EUR
VS-STPS1L30UPBF VS-STPS1L30UPBF VS-STPS1L30UPbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V40170C-M3/4W v40170c-m3.pdf
V40170C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO220
Base Part Number: V40170
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -40°C ~ 175°C
Current - Reverse Leakage @ Vr: 250µA @ 170V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Voltage - DC Reverse (Vr) (Max): 170V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
V60170G-M3/4W v60170g-m3.pdf
V60170G-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO220
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: V60170
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -40°C ~ 175°C
Current - Reverse Leakage @ Vr: 450µA @ 170V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.02V @ 30A
Current - Average Rectified (Io) (per Diode): 30A
Voltage - DC Reverse (Vr) (Max): 170V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Tube
auf Bestellung 372 Stücke
Lieferzeit 21-28 Tag (e)
V40170PW-M3/4W V40170PW-M3.pdf
V40170PW-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO3PW
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 250µA @ 170V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PW
Base Part Number: V40170
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V10170C-M3/4W v10170c-m3.pdf
V10170C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO220
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170V
Current - Average Rectified (Io) (per Diode): 5A
Voltage - Forward (Vf) (Max) @ If: 1.03V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 90µA @ 170V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: V10170
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V60170PW-M3/4W V60170PW-M3.pdf
V60170PW-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO3PW
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tube
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 170V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PW
Base Part Number: V60170
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-40MT160PBPBF 40M,70M,100MT1.0P.PbF.pdf
VS-40MT160PBPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 45A 7-MTPB
Base Part Number: 40MT160
Supplier Device Package: 7-MTPB
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.51V @ 100A
Current - Average Rectified (Io): 45A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Active
Packaging: Bulk
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 174 Stücke - Preis und Lieferfrist anzeigen
SB340S-E3/54 SB320S_thru_SB360S.pdf
SB340S-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO204AC
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AC (DO-15)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S3D-E3/57T s3a.pdf
S3D-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S3D
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
S3M-E3/57T техническая информация s3a.pdf
S3M-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 39100 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40061 Stücke - Preis und Lieferfrist anzeigen
850+ 0.58 EUR
1700+ 0.44 EUR
2550+ 0.4 EUR
5950+ 0.38 EUR
21250+ 0.36 EUR
S3M-E3/57T техническая информация s3a.pdf
S3M-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 39741 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39420 Stücke - Preis und Lieferfrist anzeigen
19+ 1.4 EUR
23+ 1.14 EUR
100+ 0.78 EUR
S3K-E3/57T s3a.pdf
S3K-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO214AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S3K
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 880 Stücke - Preis und Lieferfrist anzeigen
S3K-E3/57T s3a.pdf
S3K-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO214AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S3K
auf Bestellung 233 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 647 Stücke - Preis und Lieferfrist anzeigen
VS-MBRS1100TRPBF VS-MBRS190TRPBF_MBRS1100TRPBF.pdf
VS-MBRS1100TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A SMB
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24 Stücke - Preis und Lieferfrist anzeigen
RGP02-20EHE3/73 rgp02.pdf
RGP02-20EHE3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 500MA DO204
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGF1J-E3/5CA rgf1.pdf
RGF1J-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
RGF1J-E3/5CA rgf1.pdf
RGF1J-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214BA
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SB2H100-E3/73
SB2H100-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21856 Stücke - Preis und Lieferfrist anzeigen
SB2H100-E3/73
SB2H100-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1999 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21857 Stücke - Preis und Lieferfrist anzeigen
VS-10BQ040TRPBF VS-10BQ040PbF.pdf
VS-10BQ040TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A SMB
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SBYV27-100-E3/54 sbyv27.pdf
SBYV27-100-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 15 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 162499 Stücke - Preis und Lieferfrist anzeigen
4000+ 0.48 EUR
SBYV27-100-E3/54 sbyv27.pdf
SBYV27-100-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
auf Bestellung 6499 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 160000 Stücke - Preis und Lieferfrist anzeigen
20+ 1.33 EUR
23+ 1.15 EUR
100+ 0.86 EUR
500+ 0.68 EUR
1000+ 0.52 EUR
2000+ 0.48 EUR
ES1PD-M3/84A es1pb.pdf
ES1PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Base Part Number: ES1
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16823 Stücke - Preis und Lieferfrist anzeigen
ES1PD-M3/84A es1pb.pdf
ES1PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES1
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
auf Bestellung 4012 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15811 Stücke - Preis und Lieferfrist anzeigen
ES2D-E3/52T es2.pdf
ES2D-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 58200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 58989 Stücke - Preis und Lieferfrist anzeigen
750+ 0.56 EUR
1500+ 0.43 EUR
2250+ 0.39 EUR
5250+ 0.38 EUR
ES2D-E3/52T es2.pdf
ES2D-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 58354 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 58835 Stücke - Preis und Lieferfrist anzeigen
24+ 1.12 EUR
28+ 0.96 EUR
100+ 0.71 EUR
ES2G-E3/52T es2f.pdf
ES2G-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 158250 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 163612 Stücke - Preis und Lieferfrist anzeigen
750+ 0.56 EUR
1500+ 0.43 EUR
2250+ 0.39 EUR
5250+ 0.38 EUR
ES2G-E3/52T es2f.pdf
ES2G-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Part Status: Active
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 159102 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 162760 Stücke - Preis und Lieferfrist anzeigen
24+ 1.12 EUR
28+ 0.96 EUR
100+ 0.71 EUR
ES2A-E3/52T es2.pdf
ES2A-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 2A DO214AA
Base Part Number: ES2A
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 50V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1178 Stücke - Preis und Lieferfrist anzeigen
ES2B-E3/52T es2.pdf
ES2B-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: ES2
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY448GP-E3/54 by448gp.pdf
BY448GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.65KV 1.5A DO204
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1650V
Reverse Recovery Time (trr): 20µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 1.5A
Manufacturer: Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max): 1650V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: BY448
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 40000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 42650 Stücke - Preis und Lieferfrist anzeigen
BY448GP-E3/54 by448gp.pdf
BY448GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.65KV 1.5A DO204
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1650V
Reverse Recovery Time (trr): 20µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 1.5A
Voltage - DC Reverse (Vr) (Max): 1650V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BY448
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 42650 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
SB360-E3/54 sb320.pdf
SB360-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 4200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 36891 Stücke - Preis und Lieferfrist anzeigen
1400+ 0.53 EUR
2800+ 0.48 EUR
SB360-E3/54 sb320.pdf
SB360-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 35591 Stücke - Preis und Lieferfrist anzeigen
20+ 1.35 EUR
23+ 1.16 EUR
100+ 0.87 EUR
500+ 0.68 EUR
BYG22A-E3/TR3 byg22a.pdf
BYG22A-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 1µA @ 50V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Avalanche
Base Part Number: BYG22
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8 Stücke - Preis und Lieferfrist anzeigen
BYG22A-E3/TR3 byg22a.pdf
BYG22A-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 1µA @ 50V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BYG22
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
EGP20B-E3/54 egp20a.pdf
EGP20B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
EGP20G-E3/54 egp20a.pdf
EGP20G-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3944 Stücke - Preis und Lieferfrist anzeigen
EGP20G-E3/54 egp20a.pdf
EGP20G-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
auf Bestellung 3944 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.31 EUR
13+ 2.05 EUR
100+ 1.57 EUR
500+ 1.24 EUR
1000+ 0.99 EUR
2000+ 0.93 EUR
GF1B-E3/67A gf1.pdf
GF1B-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 65325 Stücke - Preis und Lieferfrist anzeigen
GF1G-E3/67A gf1.pdf
GF1G-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 72305 Stücke - Preis und Lieferfrist anzeigen
GF1G-E3/67A gf1.pdf
GF1G-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6941 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 71364 Stücke - Preis und Lieferfrist anzeigen
GF1A-E3/67A gf1.pdf
GF1A-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 13500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24337 Stücke - Preis und Lieferfrist anzeigen
GF1A-E3/67A gf1.pdf
GF1A-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: GF1
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 50V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
auf Bestellung 166 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 37671 Stücke - Preis und Lieferfrist anzeigen
BYM13-30-E3/96 bym13.pdf
BYM13-30-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GL41 (DO-213AB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5698 Stücke - Preis und Lieferfrist anzeigen
BYM13-30-E3/96 bym13.pdf
BYM13-30-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GL41 (DO-213AB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4198 Stücke - Preis und Lieferfrist anzeigen
BYM13-40-E3/96 bym13.pdf
BYM13-40-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO213AB
Base Part Number: BYM13
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16061 Stücke - Preis und Lieferfrist anzeigen
BYM13-40-E3/96 bym13.pdf
BYM13-40-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO213AB
Base Part Number: BYM13
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: GL41 (DO-213AB)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 4506 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14555 Stücke - Preis und Lieferfrist anzeigen
GF1D-E3/67A gf1.pdf
GF1D-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM13-60-E3/96 bym13.pdf
BYM13-60-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO213AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: GL41 (DO-213AB)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BYM13
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 59950 Stücke - Preis und Lieferfrist anzeigen
VS-10BQ060TRPBF VS-10BQ060PbF.pdf
VS-10BQ060TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A SMB
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5406-E3/54 1n5400.pdf
1N5406-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N5407-E3/54 1n5400.pdf
1N5407-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5401-E3/54 1n5400.pdf
1N5401-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5403-E3/54 1n5400.pdf
1N5403-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 3A DO201AD
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 300 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5402-E3/54 1n5400.pdf
1N5402-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ESH2PD-M3/84A esh2pb.pdf
ESH2PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO220AA
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: ESH2
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
ESH2PD-M3/84A esh2pb.pdf
ESH2PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO220AA
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: ESH2
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
Current - Average Rectified (Io): 2A
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
B360A-E3/61T b360a.pdf
B360A-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AC
Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
Current - Average Rectified (Io): 3A
Base Part Number: B360
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5060TR 1n5059.pdf
1N5060TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 81 Stücke - Preis und Lieferfrist anzeigen
1N5060TR 1n5059.pdf
1N5060TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 81 Stücke
Lieferzeit 21-28 Tag (e)
17+ 1.56 EUR
20+ 1.32 EUR
VS-10BQ030TRPBF VS-10BQ030PbF.pdf
VS-10BQ030TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5059TR 1n5059.pdf
1N5059TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 176 Stücke - Preis und Lieferfrist anzeigen
1N5059TR 1n5059.pdf
1N5059TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Reverse Recovery Time (trr): 4 µs
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 176 Stücke
Lieferzeit 21-28 Tag (e)
17+ 1.56 EUR
20+ 1.32 EUR
100+ 0.99 EUR
GF1M-E3/5CA gf1.pdf
GF1M-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Base Part Number: GF1
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 161 Stücke - Preis und Lieferfrist anzeigen
GF1M-E3/5CA gf1.pdf
GF1M-E3/5CA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Base Part Number: GF1
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Part Status: Active
Diode Type: Standard
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
auf Bestellung 161 Stücke
Lieferzeit 21-28 Tag (e)
VSB2200S-M3/54 VSB2200S.pdf
VSB2200S-M3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 2A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY399P-E3/54 by396p.pdf
BY399P-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY500-400-E3/54 BY500-100-800.pdf
BY500-400-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 5A DO201AD
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY500-600-E3/54 BY500-100-800.pdf
BY500-600-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO201AD
Package / Case: DO-201AD, Axial
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GI851-E3/54 gi850.pdf
GI851-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VS-MBRS130TRPBF MBRS130LTRPBF.pdf
VS-MBRS130TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SSB44-E3/52T ssb43l.pdf
SSB44-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 39750 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 124210 Stücke - Preis und Lieferfrist anzeigen
750+ 0.62 EUR
1500+ 0.48 EUR
2250+ 0.44 EUR
5250+ 0.42 EUR
SSB44-E3/52T ssb43l.pdf
SSB44-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
auf Bestellung 39885 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 124075 Stücke - Preis und Lieferfrist anzeigen
21+ 1.25 EUR
25+ 1.06 EUR
100+ 0.79 EUR
SB340-E3/73 sb320.pdf
SB340-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Supplier Device Package: DO-201AD
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
auf Bestellung 43000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200136 Stücke - Preis und Lieferfrist anzeigen
1000+ 0.45 EUR
2000+ 0.41 EUR
5000+ 0.39 EUR
SB340-E3/73 sb320.pdf
SB340-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO201AD
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
auf Bestellung 136 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 243000 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
27+ 0.98 EUR
100+ 0.73 EUR
VS-STPS1L30UPBF VS-STPS1L30UPbF.pdf
VS-STPS1L30UPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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