Die Produkte vishay general semiconductor - diodes division

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BYG10Y-E3/TR BYG10Y-E3/TR byg10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1.6KV 1.5A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
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Lieferzeit 21-28 Tag (e)
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1800+ 0.46 EUR
3600+ 0.42 EUR
5400+ 0.41 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1.6KV 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
auf Bestellung 6257 Stücke
Lieferzeit 21-28 Tag (e)
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22+ 1.2 EUR
26+ 1.02 EUR
100+ 0.76 EUR
500+ 0.6 EUR
RGF1D-E3/67A RGF1D-E3/67A rgf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
auf Bestellung 26100 Stücke
Lieferzeit 21-28 Tag (e)
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1500+ 0.54 EUR
3000+ 0.5 EUR
7500+ 0.48 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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19+ 1.4 EUR
22+ 1.2 EUR
100+ 0.9 EUR
500+ 0.7 EUR
RGF1J-E3/67A RGF1J-E3/67A rgf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGF1G-E3/67A RGF1G-E3/67A rgf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214BA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214BA
Part Status: Active
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
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Lieferzeit 21-28 Tag (e)
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RGF1K-E3/67A RGF1K-E3/67A rgf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
RGF1M-E3/67A RGF1M-E3/67A rgf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N5062TR 1N5062TR 1n5059.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 800V 2A SOD57
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5061TR 1N5061TR 1n5059.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 2A SOD57
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RS2K-E3/52T RS2K-E3/52T rs2a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22D-E3/TR BYG22D-E3/TR byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 40491 Stücke
Lieferzeit 21-28 Tag (e)
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1800+ 0.47 EUR
3600+ 0.43 EUR
5400+ 0.41 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 2A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
auf Bestellung 40491 Stücke
Lieferzeit 21-28 Tag (e)
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22+ 1.2 EUR
26+ 1.03 EUR
100+ 0.77 EUR
500+ 0.61 EUR
BYG22B-E3/TR BYG22B-E3/TR byg22a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 586 Stücke
Lieferzeit 21-28 Tag (e)
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S4PJ-M3/86A S4PJ-M3/86A s4pm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 4A TO277A
Base Part Number: S4P
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-10BQ100TRPBF VS-10BQ100TRPBF VS-10BQ100PbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
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VS-20BQ030TRPBF VS-20BQ030TRPBF VS-20BQ030PbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 2A SMB
Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SB360-E3/73 SB360-E3/73 sb320.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
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1000+ 0.5 EUR
2000+ 0.45 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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Lieferzeit 21-28 Tag (e)
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21+ 1.27 EUR
24+ 1.1 EUR
100+ 0.82 EUR
500+ 0.64 EUR
GF1M-E3/67A GF1M-E3/67A gf1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO214BA
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
auf Bestellung 100240 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO214BA
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
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Lieferzeit 21-28 Tag (e)
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SB550-E3/54 SB550-E3/54 sb520.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 5A DO201AD
Diode Type: Schottky
Part Status: Active
Base Part Number: SB550
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 50V
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Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SB550
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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BYW54-TR BYW54-TR byw52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S5M-E3/57T S5M-E3/57T s5a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 5A DO214AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S5M
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S5J-E3/57T S5J-E3/57T s5a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 5A DO214AB
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S5J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
auf Bestellung 2550 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 5A DO214AB
Base Part Number: S5J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3290 Stücke
Lieferzeit 21-28 Tag (e)
MURS120-E3/52T MURS120-E3/52T murs120.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4532 Stücke - Preis und Lieferfrist anzeigen
MURS140-E3/52T MURS140-E3/52T murs140.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2705 Stücke - Preis und Lieferfrist anzeigen
UF5405-E3/54 UF5405-E3/54 uf5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 500V 3A DO201AD
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 500 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26B-TR BYV26B-TR byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 1A SOD57
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB3H90-E3/54 SB3H90-E3/54 sb3h90.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 90V 3A DO201AD
Base Part Number: SB3H90
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 20µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1400 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 90V 3A DO201AD
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SB3H90
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 20µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
auf Bestellung 1934 Stücke
Lieferzeit 21-28 Tag (e)
SS32-E3/57T SS32-E3/57T ss32.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 3A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Diode Type: Schottky
auf Bestellung 6800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 656 Stücke - Preis und Lieferfrist anzeigen
850+ 0.78 EUR
1700+ 0.6 EUR
2550+ 0.55 EUR
5950+ 0.53 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 3A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
auf Bestellung 7247 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 656 Stücke - Preis und Lieferfrist anzeigen
17+ 1.56 EUR
20+ 1.32 EUR
100+ 0.99 EUR
SS5P5-M3/87A SS5P5-M3/87A ss5p6.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 5A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS5P5
auf Bestellung 14300 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 5A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS5P5
auf Bestellung 14300 Stücke
Lieferzeit 21-28 Tag (e)
BYV26E-TAP BYV26E-TAP byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1000V 1A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47468 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.72 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1000V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
auf Bestellung 3254 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47468 Stücke - Preis und Lieferfrist anzeigen
15+ 1.79 EUR
17+ 1.58 EUR
100+ 1.21 EUR
500+ 0.96 EUR
1000+ 0.77 EUR
2000+ 0.72 EUR
BYW36-TR BYW36-TR byw32.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25722 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 965 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25722 Stücke - Preis und Lieferfrist anzeigen
BYV26E-TR BYV26E-TR byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1000V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.72 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1000V 1A SOD57
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 22017 Stücke
Lieferzeit 21-28 Tag (e)
15+ 1.79 EUR
17+ 1.58 EUR
100+ 1.21 EUR
500+ 0.96 EUR
1000+ 0.77 EUR
2000+ 0.72 EUR
BYV26C-TR BYV26C-TR byv26.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1A SOD57
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.67 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1A SOD57
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Packaging: Cut Tape (CT)
auf Bestellung 30236 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.66 EUR
18+ 1.48 EUR
100+ 1.13 EUR
500+ 0.9 EUR
1000+ 0.72 EUR
2000+ 0.67 EUR
BY448TR BY448TR by448.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
auf Bestellung 80000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.69 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1500V 2A SOD57
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
auf Bestellung 83242 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
16+ 1.72 EUR
18+ 1.51 EUR
100+ 1.16 EUR
500+ 0.91 EUR
1000+ 0.73 EUR
2000+ 0.69 EUR
BYV26C-TAP BYV26C-TAP byv26.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18726 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.67 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
auf Bestellung 4523 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18726 Stücke - Preis und Lieferfrist anzeigen
16+ 1.66 EUR
18+ 1.48 EUR
100+ 1.13 EUR
500+ 0.9 EUR
1000+ 0.72 EUR
2000+ 0.67 EUR
BYW56-TR BYW56-TR byw52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1000V 2A SOD57
Base Part Number: BYW56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1000V 2A SOD57
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYW56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1000V
auf Bestellung 1053 Stücke
Lieferzeit 21-28 Tag (e)
SBYV28-200-E3/54 SBYV28-200-E3/54 sbyv28.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3.5A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.5 A
Mounting Type: Through Hole
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 20 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
UG4D-E3/54 UG4D-E3/54 ug4a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 4A DO201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
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Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 4A DO201AD
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2887 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2354 Stücke - Preis und Lieferfrist anzeigen
ES3D-E3/57T ES3D-E3/57T es3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13588 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Part Status: Active
auf Bestellung 314 Stücke
Lieferzeit 21-28 Tag (e)
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17+ 1.61 EUR
19+ 1.39 EUR
100+ 1.04 EUR
ES3G-E3/57T ES3G-E3/57T es3f.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: ES3
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
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Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO214AB
Base Part Number: ES3
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1125 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23974 Stücke - Preis und Lieferfrist anzeigen
ES3B-E3/57T ES3B-E3/57T es3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO214AB
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 17850 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 714 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO214AB
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
auf Bestellung 18400 Stücke
Lieferzeit 21-28 Tag (e)
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BYV27-100-TAP BYV27-100-TAP byv27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 2A SOD57
Reverse Recovery Time (trr): 25 ns
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
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Lieferzeit 21-28 Tag (e)
auf Bestellung 6302 Stücke - Preis und Lieferfrist anzeigen
14+ 1.87 EUR
16+ 1.64 EUR
100+ 1.26 EUR
500+ 0.99 EUR
1000+ 0.79 EUR
2000+ 0.74 EUR
BYV27-100-TR BYV27-100-TR byv27.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Avalanche
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.74 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 100V 2A SOD57
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
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Lieferzeit 21-28 Tag (e)
14+ 1.87 EUR
16+ 1.64 EUR
100+ 1.26 EUR
500+ 0.99 EUR
1000+ 0.79 EUR
2000+ 0.74 EUR
VS-MBRS130LTRPBF VS-MBRS130LTRPBF MBRS130LTRPBF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A SMB
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY269TR BY269TR by268.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCH 1.6KV 800MA SOD57
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCH 1.6KV 800MA SOD57
Reverse Recovery Time (trr): 400 ns
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
auf Bestellung 653 Stücke
Lieferzeit 21-28 Tag (e)
14+ 1.92 EUR
16+ 1.69 EUR
100+ 1.3 EUR
500+ 1.02 EUR
SSC54-E3/9AT SSC54-E3/9AT ssc53l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 5A DO214AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
auf Bestellung 3373 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 808 Stücke - Preis und Lieferfrist anzeigen
17+ 1.53 EUR
20+ 1.35 EUR
100+ 1.03 EUR
500+ 0.82 EUR
1000+ 0.65 EUR
RS3K-E3/9AT RS3K-E3/9AT rs3a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 500ns
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 3A DO214AB
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
auf Bestellung 3554 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21000 Stücke - Preis und Lieferfrist anzeigen
VS-15MQ040NTRPBF VS-15MQ040NTRPBF vs-15mq040ntrpbf.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1.5A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
auf Bestellung 18530 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 129500 Stücke - Preis und Lieferfrist anzeigen
7500+ 0.88 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1.5A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 18530 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 129500 Stücke - Preis und Lieferfrist anzeigen
12+ 2.21 EUR
14+ 1.94 EUR
100+ 1.49 EUR
500+ 1.17 EUR
1000+ 0.94 EUR
2000+ 0.88 EUR
SB540-E3/54 SB540-E3/54 sb520.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 4200 Stücke
Lieferzeit 21-28 Tag (e)
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1400+ 0.69 EUR
2800+ 0.64 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 5A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 4246 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
17+ 1.61 EUR
19+ 1.42 EUR
100+ 1.09 EUR
500+ 0.86 EUR
SB520-E3/54 SB520-E3/54 sb520.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 5A DO201AD
Base Part Number: SB520
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1400 Stücke - Preis und Lieferfrist anzeigen
SB530-E3/54 SB530-E3/54 sb520.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 5600 Stücke
Lieferzeit 21-28 Tag (e)
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1400+ 0.7 EUR
2800+ 0.66 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 5A DO201AD
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 6460 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
16+ 1.64 EUR
19+ 1.44 EUR
100+ 1.11 EUR
500+ 0.88 EUR
AS1PM-M3/84A AS1PM-M3/84A as1pm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A DO220
Package / Case: DO-220AA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A (DC)
Voltage - DC Reverse (Vr) (Max): 1000V
Base Part Number: AS1
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Diode Type: Avalanche
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7151 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A DO220
Base Part Number: AS1
Operating Temperature - Junction: -55°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A (DC)
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1550 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7151 Stücke - Preis und Lieferfrist anzeigen
UF5401-E3/54 UF5401-E3/54 uf5400.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3425 Stücke - Preis und Lieferfrist anzeigen
BYG10Y-E3/TR byg10.pdf
BYG10Y-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.6KV 1.5A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
auf Bestellung 5400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40625 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.46 EUR
3600+ 0.42 EUR
5400+ 0.41 EUR
BYG10Y-E3/TR byg10.pdf
BYG10Y-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.6KV 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
auf Bestellung 6257 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 39768 Stücke - Preis und Lieferfrist anzeigen
22+ 1.2 EUR
26+ 1.02 EUR
100+ 0.76 EUR
500+ 0.6 EUR
RGF1D-E3/67A rgf1.pdf
RGF1D-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
auf Bestellung 26100 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90069 Stücke - Preis und Lieferfrist anzeigen
1500+ 0.54 EUR
3000+ 0.5 EUR
7500+ 0.48 EUR
RGF1D-E3/67A rgf1.pdf
RGF1D-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
auf Bestellung 26160 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90009 Stücke - Preis und Lieferfrist anzeigen
19+ 1.4 EUR
22+ 1.2 EUR
100+ 0.9 EUR
500+ 0.7 EUR
RGF1J-E3/67A rgf1.pdf
RGF1J-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10694 Stücke - Preis und Lieferfrist anzeigen
RGF1G-E3/67A rgf1.pdf
RGF1G-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7637 Stücke - Preis und Lieferfrist anzeigen
RGF1G-E3/67A rgf1.pdf
RGF1G-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Part Status: Active
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7635 Stücke - Preis und Lieferfrist anzeigen
RGF1K-E3/67A rgf1.pdf
RGF1K-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
RGF1K-E3/67A rgf1.pdf
RGF1K-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
RGF1M-E3/67A rgf1.pdf
RGF1M-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20051 Stücke - Preis und Lieferfrist anzeigen
1N5062TR 1n5059.pdf
1N5062TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5061TR 1n5059.pdf
1N5061TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RS2K-E3/52T rs2a.pdf
RS2K-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYG22D-E3/TR byg22a.pdf
BYG22D-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 40491 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 81178 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.47 EUR
3600+ 0.43 EUR
5400+ 0.41 EUR
BYG22D-E3/TR byg22a.pdf
BYG22D-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
auf Bestellung 40491 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 81178 Stücke - Preis und Lieferfrist anzeigen
22+ 1.2 EUR
26+ 1.03 EUR
100+ 0.77 EUR
500+ 0.61 EUR
BYG22B-E3/TR byg22a.pdf
BYG22B-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14876 Stücke - Preis und Lieferfrist anzeigen
BYG22B-E3/TR byg22a.pdf
BYG22B-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 586 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14290 Stücke - Preis und Lieferfrist anzeigen
S4PJ-M3/86A s4pm.pdf
S4PJ-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Base Part Number: S4P
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3556 Stücke - Preis und Lieferfrist anzeigen
VS-10BQ100TRPBF VS-10BQ100PbF.pdf
VS-10BQ100TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120416 Stücke - Preis und Lieferfrist anzeigen
VS-20BQ030TRPBF VS-20BQ030PbF.pdf
VS-20BQ030TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A SMB
Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SB360-E3/73 sb320.pdf
SB360-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 250502 Stücke - Preis und Lieferfrist anzeigen
1000+ 0.5 EUR
2000+ 0.45 EUR
SB360-E3/73 sb320.pdf
SB360-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 502 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 252000 Stücke - Preis und Lieferfrist anzeigen
21+ 1.27 EUR
24+ 1.1 EUR
100+ 0.82 EUR
500+ 0.64 EUR
GF1M-E3/67A gf1.pdf
GF1M-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
auf Bestellung 100240 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 219281 Stücke - Preis und Lieferfrist anzeigen
GF1M-E3/67A gf1.pdf
GF1M-E3/67A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
auf Bestellung 100240 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 219281 Stücke - Preis und Lieferfrist anzeigen
SB550-E3/54 sb520.pdf
SB550-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A DO201AD
Diode Type: Schottky
Part Status: Active
Base Part Number: SB550
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 50V
auf Bestellung 9800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4114 Stücke - Preis und Lieferfrist anzeigen
SB550-E3/54 sb520.pdf
SB550-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SB550
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 1388 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12526 Stücke - Preis und Lieferfrist anzeigen
BYW54-TR byw52.pdf
BYW54-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S5M-E3/57T s5a.pdf
S5M-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 5A DO214AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S5M
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S5J-E3/57T s5a.pdf
S5J-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S5J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
auf Bestellung 2550 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3290 Stücke - Preis und Lieferfrist anzeigen
S5J-E3/57T s5a.pdf
S5J-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Base Part Number: S5J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3290 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2550 Stücke - Preis und Lieferfrist anzeigen
MURS120-E3/52T murs120.pdf
MURS120-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4532 Stücke - Preis und Lieferfrist anzeigen
MURS140-E3/52T murs140.pdf
MURS140-E3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2705 Stücke - Preis und Lieferfrist anzeigen
UF5405-E3/54 uf5400.pdf
UF5405-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 3A DO201AD
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 500 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYV26B-TR byv26.pdf
BYV26B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB3H90-E3/54 sb3h90.pdf
SB3H90-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 3A DO201AD
Base Part Number: SB3H90
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 20µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1934 Stücke - Preis und Lieferfrist anzeigen
SB3H90-E3/54 sb3h90.pdf
SB3H90-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 3A DO201AD
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SB3H90
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 20µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
auf Bestellung 1934 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1400 Stücke - Preis und Lieferfrist anzeigen
SS32-E3/57T ss32.pdf
SS32-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Diode Type: Schottky
auf Bestellung 6800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7903 Stücke - Preis und Lieferfrist anzeigen
850+ 0.78 EUR
1700+ 0.6 EUR
2550+ 0.55 EUR
5950+ 0.53 EUR
SS32-E3/57T ss32.pdf
SS32-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
auf Bestellung 7247 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7456 Stücke - Preis und Lieferfrist anzeigen
17+ 1.56 EUR
20+ 1.32 EUR
100+ 0.99 EUR
SS5P5-M3/87A ss5p6.pdf
SS5P5-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS5P5
auf Bestellung 14300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14300 Stücke - Preis und Lieferfrist anzeigen
SS5P5-M3/87A ss5p6.pdf
SS5P5-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS5P5
auf Bestellung 14300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14300 Stücke - Preis und Lieferfrist anzeigen
BYV26E-TAP byv26.pdf
BYV26E-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 50722 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.72 EUR
BYV26E-TAP byv26.pdf
BYV26E-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
auf Bestellung 3254 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 77468 Stücke - Preis und Lieferfrist anzeigen
15+ 1.79 EUR
17+ 1.58 EUR
100+ 1.21 EUR
500+ 0.96 EUR
1000+ 0.77 EUR
2000+ 0.72 EUR
BYW36-TR byw32.pdf
BYW36-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26687 Stücke - Preis und Lieferfrist anzeigen
BYW36-TR byw32.pdf
BYW36-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 965 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25722 Stücke - Preis und Lieferfrist anzeigen
BYV26E-TR byv26.pdf
BYV26E-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22017 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.72 EUR
BYV26E-TR byv26.pdf
BYV26E-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A SOD57
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 22017 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
15+ 1.79 EUR
17+ 1.58 EUR
100+ 1.21 EUR
500+ 0.96 EUR
1000+ 0.77 EUR
2000+ 0.72 EUR
BYV26C-TR техническая информация byv26.pdf
BYV26C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30236 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.67 EUR
BYV26C-TR техническая информация byv26.pdf
BYV26C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Packaging: Cut Tape (CT)
auf Bestellung 30236 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
16+ 1.66 EUR
18+ 1.48 EUR
100+ 1.13 EUR
500+ 0.9 EUR
1000+ 0.72 EUR
2000+ 0.67 EUR
BY448TR by448.pdf
BY448TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
auf Bestellung 80000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 86242 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.69 EUR
BY448TR by448.pdf
BY448TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 2A SOD57
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
auf Bestellung 83242 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 83000 Stücke - Preis und Lieferfrist anzeigen
16+ 1.72 EUR
18+ 1.51 EUR
100+ 1.16 EUR
500+ 0.91 EUR
1000+ 0.73 EUR
2000+ 0.69 EUR
BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23249 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.67 EUR
BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
auf Bestellung 4523 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33726 Stücke - Preis und Lieferfrist anzeigen
16+ 1.66 EUR
18+ 1.48 EUR
100+ 1.13 EUR
500+ 0.9 EUR
1000+ 0.72 EUR
2000+ 0.67 EUR
BYW56-TR byw52.pdf
BYW56-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Base Part Number: BYW56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYW56-TR byw52.pdf
BYW56-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYW56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1000V
auf Bestellung 1053 Stücke
Lieferzeit 21-28 Tag (e)
SBYV28-200-E3/54 sbyv28.pdf
SBYV28-200-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3.5A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.5 A
Mounting Type: Through Hole
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 20 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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UG4D-E3/54 ug4a.pdf
UG4D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
auf Bestellung 2800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5241 Stücke - Preis und Lieferfrist anzeigen
UG4D-E3/54 ug4a.pdf
UG4D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO201AD
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 5154 Stücke - Preis und Lieferfrist anzeigen
ES3D-E3/57T es3.pdf
ES3D-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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ES3D-E3/57T es3.pdf
ES3D-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Part Status: Active
auf Bestellung 314 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13588 Stücke - Preis und Lieferfrist anzeigen
17+ 1.61 EUR
19+ 1.39 EUR
100+ 1.04 EUR
ES3G-E3/57T es3f.pdf
ES3G-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: ES3
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
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Lieferzeit 21-28 Tag (e)
auf Bestellung 25099 Stücke - Preis und Lieferfrist anzeigen
ES3G-E3/57T es3f.pdf
ES3G-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Base Part Number: ES3
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1125 Stücke
Lieferzeit 21-28 Tag (e)
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ES3B-E3/57T es3.pdf
ES3B-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 17850 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19114 Stücke - Preis und Lieferfrist anzeigen
ES3B-E3/57T es3.pdf
ES3B-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
auf Bestellung 18400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18564 Stücke - Preis und Lieferfrist anzeigen
BYV27-100-TAP byv27.pdf
BYV27-100-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10921 Stücke - Preis und Lieferfrist anzeigen
BYV27-100-TAP byv27.pdf
BYV27-100-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Reverse Recovery Time (trr): 25 ns
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
auf Bestellung 4619 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6302 Stücke - Preis und Lieferfrist anzeigen
14+ 1.87 EUR
16+ 1.64 EUR
100+ 1.26 EUR
500+ 0.99 EUR
1000+ 0.79 EUR
2000+ 0.74 EUR
BYV27-100-TR byv27.pdf
BYV27-100-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Avalanche
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 32540 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.74 EUR
BYV27-100-TR byv27.pdf
BYV27-100-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
auf Bestellung 32540 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
14+ 1.87 EUR
16+ 1.64 EUR
100+ 1.26 EUR
500+ 0.99 EUR
1000+ 0.79 EUR
2000+ 0.74 EUR
VS-MBRS130LTRPBF MBRS130LTRPBF.pdf
VS-MBRS130LTRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A SMB
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BY269TR by268.pdf
BY269TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCH 1.6KV 800MA SOD57
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 653 Stücke - Preis und Lieferfrist anzeigen
BY269TR by268.pdf
BY269TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCH 1.6KV 800MA SOD57
Reverse Recovery Time (trr): 400 ns
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
auf Bestellung 653 Stücke
Lieferzeit 21-28 Tag (e)
14+ 1.92 EUR
16+ 1.69 EUR
100+ 1.3 EUR
500+ 1.02 EUR
SSC54-E3/9AT ssc53l.pdf
SSC54-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SSC54-E3/9AT ssc53l.pdf
SSC54-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
auf Bestellung 3373 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 808 Stücke - Preis und Lieferfrist anzeigen
17+ 1.53 EUR
20+ 1.35 EUR
100+ 1.03 EUR
500+ 0.82 EUR
1000+ 0.65 EUR
RS3K-E3/9AT rs3a.pdf
RS3K-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 500ns
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24554 Stücke - Preis und Lieferfrist anzeigen
RS3K-E3/9AT rs3a.pdf
RS3K-E3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO214AB
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
auf Bestellung 3554 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24500 Stücke - Preis und Lieferfrist anzeigen
VS-15MQ040NTRPBF vs-15mq040ntrpbf.pdf
VS-15MQ040NTRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
auf Bestellung 18530 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 148030 Stücke - Preis und Lieferfrist anzeigen
7500+ 0.88 EUR
VS-15MQ040NTRPBF vs-15mq040ntrpbf.pdf
VS-15MQ040NTRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 18530 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 148030 Stücke - Preis und Lieferfrist anzeigen
12+ 2.21 EUR
14+ 1.94 EUR
100+ 1.49 EUR
500+ 1.17 EUR
1000+ 0.94 EUR
2000+ 0.88 EUR
SB540-E3/54 sb520.pdf
SB540-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 4200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 204246 Stücke - Preis und Lieferfrist anzeigen
1400+ 0.69 EUR
2800+ 0.64 EUR
SB540-E3/54 sb520.pdf
SB540-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 4246 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 204200 Stücke - Preis und Lieferfrist anzeigen
17+ 1.61 EUR
19+ 1.42 EUR
100+ 1.09 EUR
500+ 0.86 EUR
SB520-E3/54 sb520.pdf
SB520-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 5A DO201AD
Base Part Number: SB520
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1400 Stücke - Preis und Lieferfrist anzeigen
SB530-E3/54 sb520.pdf
SB530-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 5600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9260 Stücke - Preis und Lieferfrist anzeigen
1400+ 0.7 EUR
2800+ 0.66 EUR
SB530-E3/54 sb520.pdf
SB530-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO201AD
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 6460 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8400 Stücke - Preis und Lieferfrist anzeigen
16+ 1.64 EUR
19+ 1.44 EUR
100+ 1.11 EUR
500+ 0.88 EUR
AS1PM-M3/84A as1pm.pdf
AS1PM-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO220
Package / Case: DO-220AA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A (DC)
Voltage - DC Reverse (Vr) (Max): 1000V
Base Part Number: AS1
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Diode Type: Avalanche
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8701 Stücke - Preis und Lieferfrist anzeigen
AS1PM-M3/84A as1pm.pdf
AS1PM-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO220
Base Part Number: AS1
Operating Temperature - Junction: -55°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A (DC)
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1550 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7151 Stücke - Preis und Lieferfrist anzeigen
UF5401-E3/54 uf5400.pdf
UF5401-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3425 Stücke - Preis und Lieferfrist anzeigen
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