Die Produkte vishay general semiconductor - diodes division
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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BYG10Y-E3/TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1.6KV 1.5A Voltage - DC Reverse (Vr) (Max): 1600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 4 µs Mounting Type: Surface Mount Diode Type: Avalanche Speed: Standard Recovery >500ns, > 200mA (Io) Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A |
auf Bestellung 5400 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 34368 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1.6KV 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 1600 V |
auf Bestellung 6257 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 34368 Stücke - Preis und Lieferfrist anzeigen
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RGF1D-E3/67A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214BA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Tape & Reel (TR) |
auf Bestellung 26100 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 63909 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214BA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Cut Tape (CT) |
auf Bestellung 26160 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 63909 Stücke - Preis und Lieferfrist anzeigen
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RGF1J-E3/67A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO214BA Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Package / Case: DO-214BA Mounting Type: Surface Mount Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10694 Stücke - Preis und Lieferfrist anzeigen
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RGF1G-E3/67A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO214BA Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Package / Case: DO-214BA Mounting Type: Surface Mount Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7635 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO214BA Part Status: Active Packaging: Cut Tape (CT) Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C |
auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7635 Stücke - Preis und Lieferfrist anzeigen
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RGF1K-E3/67A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO214BA Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Package / Case: DO-214BA Mounting Type: Surface Mount Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 800V Reverse Recovery Time (trr): 500ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO214BA Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Package / Case: DO-214BA Mounting Type: Surface Mount Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 800V Reverse Recovery Time (trr): 500ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) |
auf Bestellung 50 Stücke Lieferzeit 21-28 Tag (e) |
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RGF1M-E3/67A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO214BA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20051 Stücke - Preis und Lieferfrist anzeigen
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1N5062TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Capacitance @ Vr, F: 40pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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1N5061TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 600 V Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 40pF @ 0V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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RS2K-E3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1.5A DO214AA Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 17pF @ 4V, 1MHz Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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BYG22D-E3/TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A DO214AC Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 40491 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 40687 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A DO214AC Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Surface Mount |
auf Bestellung 40491 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 40687 Stücke - Preis und Lieferfrist anzeigen
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BYG22B-E3/TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Avalanche Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14290 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 2A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Avalanche Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
auf Bestellung 586 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 14290 Stücke - Preis und Lieferfrist anzeigen
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S4PJ-M3/86A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A TO277A Base Part Number: S4P Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Reverse Recovery Time (trr): 2.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Average Rectified (Io): 4A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3556 Stücke - Preis und Lieferfrist anzeigen
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VS-10BQ100TRPBF |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1A SMB Current - Reverse Leakage @ Vr: 500 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120416 Stücke - Preis und Lieferfrist anzeigen
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VS-20BQ030TRPBF |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A SMB Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Part Status: Obsolete Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMB Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 500µA @ 30V Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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SB360-E3/73 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO201AD Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A |
auf Bestellung 2000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 250000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO201AD Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Diode Type: Schottky Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) Speed: Fast Recovery =< 500ns, > 200mA (Io) |
auf Bestellung 502 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 250000 Stücke - Preis und Lieferfrist anzeigen
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GF1M-E3/67A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO214BA Base Part Number: GF1 Manufacturer: Vishay General Semiconductor - Diodes Division Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Package / Case: DO-214BA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard |
auf Bestellung 100240 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 119041 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO214BA Reverse Recovery Time (trr): 2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Base Part Number: GF1 Manufacturer: Vishay General Semiconductor - Diodes Division Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Package / Case: DO-214BA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 5µA @ 1000V |
auf Bestellung 100240 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 119041 Stücke - Preis und Lieferfrist anzeigen
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SB550-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 5A DO201AD Diode Type: Schottky Part Status: Active Base Part Number: SB550 Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Package / Case: DO-201AD, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 500µA @ 50V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Current - Average Rectified (Io): 5A Voltage - DC Reverse (Vr) (Max): 50V |
auf Bestellung 9800 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2726 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 5A DO201AD Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A Current - Average Rectified (Io): 5A Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Schottky Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SB550 Manufacturer: Vishay General Semiconductor - Diodes Division Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Package / Case: DO-201AD, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 500µA @ 50V Speed: Fast Recovery =< 500ns, > 200mA (Io) |
auf Bestellung 1388 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2726 Stücke - Preis und Lieferfrist anzeigen
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BYW54-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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S5M-E3/57T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 5A DO214AB Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: S5M |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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S5J-E3/57T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 5A DO214AB Current - Average Rectified (Io): 5A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: S5J Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Reverse Recovery Time (trr): 2.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A |
auf Bestellung 2550 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 5A DO214AB Base Part Number: S5J Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Reverse Recovery Time (trr): 2.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Current - Average Rectified (Io): 5A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 3290 Stücke Lieferzeit 21-28 Tag (e) |
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MURS120-E3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4532 Stücke - Preis und Lieferfrist anzeigen
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MURS140-E3/52T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 2A DO214AA Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2705 Stücke - Preis und Lieferfrist anzeigen
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UF5405-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 500V 3A DO201AD Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Capacitance @ Vr, F: 36pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Voltage - DC Reverse (Vr) (Max): 500 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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BYV26B-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 1A SOD57 Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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SB3H90-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 3A DO201AD Base Part Number: SB3H90 Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-201AD Package / Case: DO-201AD, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 20µA @ 90V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 90V Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 1400 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 3A DO201AD Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: SB3H90 Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-201AD Package / Case: DO-201AD, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 20µA @ 90V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 90V Diode Type: Schottky |
auf Bestellung 1934 Stücke Lieferzeit 21-28 Tag (e) |
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SS32-E3/57T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 3A DO214AB Current - Reverse Leakage @ Vr: 500 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Diode Type: Schottky |
auf Bestellung 6800 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 656 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 3A DO214AB Current - Reverse Leakage @ Vr: 500 µA @ 20 V Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount |
auf Bestellung 7247 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 656 Stücke - Preis und Lieferfrist anzeigen
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SS5P5-M3/87A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 5A TO277A Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 150µA @ 50V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: SS5P5 |
auf Bestellung 14300 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 5A TO277A Manufacturer: Vishay General Semiconductor - Diodes Division Packaging: Cut Tape (CT) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 150µA @ 50V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: SS5P5 |
auf Bestellung 14300 Stücke Lieferzeit 21-28 Tag (e) |
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BYV26E-TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 1A SOD57 Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C |
auf Bestellung 30000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 47468 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 1A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole |
auf Bestellung 3254 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 47468 Stücke - Preis und Lieferfrist anzeigen
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BYW36-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25722 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 2A SOD57 Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5 µA @ 600 V Package / Case: SOD-57, Axial Packaging: Cut Tape (CT) |
auf Bestellung 965 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 25722 Stücke - Preis und Lieferfrist anzeigen
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BYV26E-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 1A SOD57 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial |
auf Bestellung 20000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 1A SOD57 Package / Case: SOD-57, Axial Packaging: Cut Tape (CT) Mounting Type: Through Hole Diode Type: Avalanche Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 22017 Stücke Lieferzeit 21-28 Tag (e) |
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BYV26C-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1A SOD57 Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Current - Reverse Leakage @ Vr: 5 µA @ 600 V Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) |
auf Bestellung 30000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1A SOD57 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Packaging: Cut Tape (CT) |
auf Bestellung 30236 Stücke Lieferzeit 21-28 Tag (e) |
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BY448TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1500V 2A SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Diode Type: Avalanche Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 1500 V |
auf Bestellung 80000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1500V 2A SOD57 Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 3 µA @ 1500 V Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A |
auf Bestellung 83242 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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BYV26C-TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1A SOD57 Mounting Type: Through Hole Package / Case: SOD-57, Axial Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Packaging: Tape & Box (TB) Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1A Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche |
auf Bestellung 15000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 18726 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 1A SOD57 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial |
auf Bestellung 4523 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 18726 Stücke - Preis und Lieferfrist anzeigen
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BYW56-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 2A SOD57 Base Part Number: BYW56 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Package / Case: SOD-57, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 1000V Reverse Recovery Time (trr): 4µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Avalanche Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1000V 2A SOD57 Diode Type: Avalanche Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division Base Part Number: BYW56 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Package / Case: SOD-57, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 1000V Reverse Recovery Time (trr): 4µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 1000V |
auf Bestellung 1053 Stücke Lieferzeit 21-28 Tag (e) |
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SBYV28-200-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3.5A DO201AD Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.5 A Mounting Type: Through Hole Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Speed: Fast Recovery =< 500ns, > 200mA (Io) Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3.5A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Reverse Recovery Time (trr): 20 ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
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UG4D-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 4A DO201AD Package / Case: DO-201AD, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 30ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A Current - Average Rectified (Io): 4A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD |
auf Bestellung 2800 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2354 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 4A DO201AD Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 30ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A Current - Average Rectified (Io): 4A Voltage - DC Reverse (Vr) (Max): 200V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Package / Case: DO-201AD, Axial Mounting Type: Through Hole Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 2887 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2354 Stücke - Preis und Lieferfrist anzeigen
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ES3D-E3/57T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214AB Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13588 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214AB Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Part Status: Active |
auf Bestellung 314 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13588 Stücke - Preis und Lieferfrist anzeigen
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ES3G-E3/57T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO214AB Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: ES3 Manufacturer: Vishay General Semiconductor - Diodes Division Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 400V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Average Rectified (Io): 3A |
auf Bestellung 850 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 23974 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A DO214AB Base Part Number: ES3 Manufacturer: Vishay General Semiconductor - Diodes Division Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 400V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 1125 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 23974 Stücke - Preis und Lieferfrist anzeigen
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ES3B-E3/57T |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO214AB Capacitance @ Vr, F: 45pF @ 4V, 1MHz Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
auf Bestellung 17850 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 714 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO214AB Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz |
auf Bestellung 18400 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 714 Stücke - Preis und Lieferfrist anzeigen
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BYV27-100-TAP |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 2A SOD57 Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Box (TB) Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6302 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 2A SOD57 Reverse Recovery Time (trr): 25 ns Packaging: Cut Tape (CT) Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A |
auf Bestellung 4619 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6302 Stücke - Preis und Lieferfrist anzeigen
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BYV27-100-TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 2A SOD57 Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Diode Type: Avalanche Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 25 ns |
auf Bestellung 15000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 100V 2A SOD57 Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 2A |
auf Bestellung 32540 Stücke Lieferzeit 21-28 Tag (e) |
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VS-MBRS130LTRPBF |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A SMB Diode Type: Schottky Part Status: Obsolete Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 1mA @ 30V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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BY269TR |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCH 1.6KV 800MA SOD57 Reverse Recovery Time (trr): 400 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Avalanche Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2 µA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Voltage - DC Reverse (Vr) (Max): 1600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 800mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCH 1.6KV 800MA SOD57 Reverse Recovery Time (trr): 400 ns Diode Type: Avalanche Current - Reverse Leakage @ Vr: 2 µA @ 1600 V Mounting Type: Through Hole Package / Case: SOD-57, Axial Packaging: Cut Tape (CT) Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Voltage - DC Reverse (Vr) (Max): 1600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-57 Current - Average Rectified (Io): 800mA |
auf Bestellung 653 Stücke Lieferzeit 21-28 Tag (e) |
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SSC54-E3/9AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5A DO214AB Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Diode Type: Schottky Mounting Type: Surface Mount Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 808 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5A DO214AB Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active |
auf Bestellung 3373 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 808 Stücke - Preis und Lieferfrist anzeigen
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RS3K-E3/9AT |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 3A DO214AB Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 34pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 800V Reverse Recovery Time (trr): 500ns Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 21000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 3A DO214AB Capacitance @ Vr, F: 34pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 800V Reverse Recovery Time (trr): 500ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount |
auf Bestellung 3554 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 21000 Stücke - Preis und Lieferfrist anzeigen
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VS-15MQ040NTRPBF |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1.5A SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 134pF @ 10V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA |
auf Bestellung 18530 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 129500 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1.5A SMA Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 134pF @ 10V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 18530 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 129500 Stücke - Preis und Lieferfrist anzeigen
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SB540-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5A DO201AD Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
auf Bestellung 4200 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5A DO201AD Current - Reverse Leakage @ Vr: 500 µA @ 40 V Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A Supplier Device Package: DO-201AD Current - Average Rectified (Io): 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) |
auf Bestellung 4246 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
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SB520-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 5A DO201AD Base Part Number: SB520 Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Package / Case: DO-201AD, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 500µA @ 20V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A Current - Average Rectified (Io): 5A Voltage - DC Reverse (Vr) (Max): 20V Diode Type: Schottky Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1400 Stücke - Preis und Lieferfrist anzeigen
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SB530-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 5A DO201AD Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
auf Bestellung 5600 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 5A DO201AD Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) |
auf Bestellung 6460 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
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~~2.jpg "AS1PM-M3/84A") |
AS1PM-M3/84A |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.5A DO220 Package / Case: DO-220AA Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Manufacturer: Vishay General Semiconductor - Diodes Division Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 1.5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Current - Average Rectified (Io): 1.5A (DC) Voltage - DC Reverse (Vr) (Max): 1000V Base Part Number: AS1 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Diode Type: Avalanche Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7151 Stücke - Preis und Lieferfrist anzeigen
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| Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.5A DO220 Base Part Number: AS1 Operating Temperature - Junction: -55°C ~ 175°C Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Current - Average Rectified (Io): 1.5A (DC) Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Avalanche Part Status: Active Supplier Device Package: DO-220AA (SMP) Package / Case: DO-220AA Mounting Type: Surface Mount Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 1000V Reverse Recovery Time (trr): 1.5µs Packaging: Cut Tape (CT) Manufacturer: Vishay General Semiconductor - Diodes Division |
auf Bestellung 1550 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7151 Stücke - Preis und Lieferfrist anzeigen
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UF5401-E3/54 |
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Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO201AD Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3425 Stücke - Preis und Lieferfrist anzeigen
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| BYG10Y-E3/TR |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.6KV 1.5A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
auf Bestellung 5400 Stücke Description: DIODE AVALANCHE 1.6KV 1.5A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Lieferzeit 21-28 Tag (e)
auf Bestellung 40625 Stücke - Preis und Lieferfrist anzeigen
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| BYG10Y-E3/TR |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.6KV 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
auf Bestellung 6257 Stücke Description: DIODE AVALANCHE 1.6KV 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 39768 Stücke - Preis und Lieferfrist anzeigen
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| RGF1D-E3/67A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
auf Bestellung 26100 Stücke Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 90069 Stücke - Preis und Lieferfrist anzeigen
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| RGF1D-E3/67A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
auf Bestellung 26160 Stücke Description: DIODE GEN PURP 200V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 90009 Stücke - Preis und Lieferfrist anzeigen
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| RGF1J-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 10694 Stücke - Preis und Lieferfrist anzeigen
| RGF1G-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO214BA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
auf Bestellung 7637 Stücke - Preis und Lieferfrist anzeigen
| RGF1G-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214BA
Part Status: Active
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 2 Stücke Description: DIODE GEN PURP 400V 1A DO214BA
Part Status: Active
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Lieferzeit 21-28 Tag (e)
auf Bestellung 7635 Stücke - Preis und Lieferfrist anzeigen
| RGF1K-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| RGF1K-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
auf Bestellung 50 Stücke Description: DIODE GEN PURP 800V 1A DO214BA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| RGF1M-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
auf Bestellung 20051 Stücke - Preis und Lieferfrist anzeigen
| 1N5062TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 800V 2A SOD57
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
| 1N5061TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 2A SOD57
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
| RS2K-E3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
| BYG22D-E3/TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 40491 Stücke Description: DIODE AVALANCHE 200V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 81178 Stücke - Preis und Lieferfrist anzeigen
|
| BYG22D-E3/TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
auf Bestellung 40491 Stücke Description: DIODE AVALANCHE 200V 2A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 81178 Stücke - Preis und Lieferfrist anzeigen
|
| BYG22B-E3/TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 14876 Stücke - Preis und Lieferfrist anzeigen
| BYG22B-E3/TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 586 Stücke Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 14290 Stücke - Preis und Lieferfrist anzeigen
| S4PJ-M3/86A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Base Part Number: S4P
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 4A TO277A
Base Part Number: S4P
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3556 Stücke - Preis und Lieferfrist anzeigen
| VS-10BQ100TRPBF |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 1A SMB
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
auf Bestellung 120416 Stücke - Preis und Lieferfrist anzeigen
| VS-20BQ030TRPBF |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A SMB
Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 2A SMB
Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| SB360-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
auf Bestellung 2000 Stücke Description: DIODE SCHOTTKY 60V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Lieferzeit 21-28 Tag (e)
auf Bestellung 250502 Stücke - Preis und Lieferfrist anzeigen
|
| SB360-E3/73 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 502 Stücke Description: DIODE SCHOTTKY 60V 3A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Lieferzeit 21-28 Tag (e)
auf Bestellung 252000 Stücke - Preis und Lieferfrist anzeigen
|
| GF1M-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
auf Bestellung 100240 Stücke Description: DIODE GEN PURP 1KV 1A DO214BA
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Lieferzeit 21-28 Tag (e)
auf Bestellung 219281 Stücke - Preis und Lieferfrist anzeigen
| GF1M-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
auf Bestellung 100240 Stücke Description: DIODE GEN PURP 1KV 1A DO214BA
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GF1
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Lieferzeit 21-28 Tag (e)
auf Bestellung 219281 Stücke - Preis und Lieferfrist anzeigen
| SB550-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A DO201AD
Diode Type: Schottky
Part Status: Active
Base Part Number: SB550
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 50V
auf Bestellung 9800 Stücke Description: DIODE SCHOTTKY 50V 5A DO201AD
Diode Type: Schottky
Part Status: Active
Base Part Number: SB550
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 50V
Lieferzeit 21-28 Tag (e)
auf Bestellung 4114 Stücke - Preis und Lieferfrist anzeigen
| SB550-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SB550
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 1388 Stücke Description: DIODE SCHOTTKY 50V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SB550
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 50V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Lieferzeit 21-28 Tag (e)
auf Bestellung 12526 Stücke - Preis und Lieferfrist anzeigen
| BYW54-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
| S5M-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 5A DO214AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S5M
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 5A DO214AB
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S5M
| S5J-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S5J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
auf Bestellung 2550 Stücke Description: DIODE GEN PURP 600V 5A DO214AB
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: S5J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Lieferzeit 21-28 Tag (e)
auf Bestellung 3290 Stücke - Preis und Lieferfrist anzeigen
| S5J-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DO214AB
Base Part Number: S5J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 3290 Stücke Description: DIODE GEN PURP 600V 5A DO214AB
Base Part Number: S5J
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Reverse Recovery Time (trr): 2.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 2550 Stücke - Preis und Lieferfrist anzeigen
| MURS120-E3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 200V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 4532 Stücke - Preis und Lieferfrist anzeigen
| MURS140-E3/52T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
auf Bestellung 2705 Stücke - Preis und Lieferfrist anzeigen
| UF5405-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 500V 3A DO201AD
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 500 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 500V 3A DO201AD
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 500 V
| BYV26B-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 400V 1A SOD57
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
| SB3H90-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 3A DO201AD
Base Part Number: SB3H90
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 20µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1400 Stücke Description: DIODE SCHOTTKY 90V 3A DO201AD
Base Part Number: SB3H90
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 20µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 1934 Stücke - Preis und Lieferfrist anzeigen
| SB3H90-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 3A DO201AD
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SB3H90
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 20µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
auf Bestellung 1934 Stücke Description: DIODE SCHOTTKY 90V 3A DO201AD
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SB3H90
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 20µA @ 90V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 90V
Diode Type: Schottky
Lieferzeit 21-28 Tag (e)
auf Bestellung 1400 Stücke - Preis und Lieferfrist anzeigen
| SS32-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Diode Type: Schottky
auf Bestellung 6800 Stücke Description: DIODE SCHOTTKY 20V 3A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Diode Type: Schottky
Lieferzeit 21-28 Tag (e)
auf Bestellung 7903 Stücke - Preis und Lieferfrist anzeigen
|
| SS32-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
auf Bestellung 7247 Stücke Description: DIODE SCHOTTKY 20V 3A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 7456 Stücke - Preis und Lieferfrist anzeigen
|
| SS5P5-M3/87A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS5P5
auf Bestellung 14300 Stücke Description: DIODE SCHOTTKY 50V 5A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS5P5
Lieferzeit 21-28 Tag (e)
auf Bestellung 14300 Stücke - Preis und Lieferfrist anzeigen
| SS5P5-M3/87A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 5A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS5P5
auf Bestellung 14300 Stücke Description: DIODE SCHOTTKY 50V 5A TO277A
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS5P5
Lieferzeit 21-28 Tag (e)
auf Bestellung 14300 Stücke - Preis und Lieferfrist anzeigen
| BYV26E-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 30000 Stücke Description: DIODE AVALANCHE 1000V 1A SOD57
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Lieferzeit 21-28 Tag (e)
auf Bestellung 50722 Stücke - Preis und Lieferfrist anzeigen
|
| BYV26E-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
auf Bestellung 3254 Stücke Description: DIODE AVALANCHE 1000V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
auf Bestellung 77468 Stücke - Preis und Lieferfrist anzeigen
|
| BYW36-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 600V 2A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 26687 Stücke - Preis und Lieferfrist anzeigen
| BYW36-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 965 Stücke Description: DIODE AVALANCHE 600V 2A SOD57
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 25722 Stücke - Preis und Lieferfrist anzeigen
| BYV26E-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
auf Bestellung 20000 Stücke Description: DIODE AVALANCHE 1000V 1A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Lieferzeit 21-28 Tag (e)
auf Bestellung 22017 Stücke - Preis und Lieferfrist anzeigen
|
| BYV26E-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A SOD57
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 22017 Stücke Description: DIODE AVALANCHE 1000V 1A SOD57
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
|
| BYV26C-TR | |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke Description: DIODE AVALANCHE 600V 1A SOD57
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 30236 Stücke - Preis und Lieferfrist anzeigen
|
| BYV26C-TR | |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Packaging: Cut Tape (CT)
auf Bestellung 30236 Stücke Description: DIODE AVALANCHE 600V 1A SOD57
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
|
| BY448TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
auf Bestellung 80000 Stücke Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Diode Type: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 86242 Stücke - Preis und Lieferfrist anzeigen
|
| BY448TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 2A SOD57
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
auf Bestellung 83242 Stücke Description: DIODE AVALANCHE 1500V 2A SOD57
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Lieferzeit 21-28 Tag (e)
auf Bestellung 83000 Stücke - Preis und Lieferfrist anzeigen
|
| BYV26C-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
auf Bestellung 15000 Stücke Description: DIODE AVALANCHE 600V 1A SOD57
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Packaging: Tape & Box (TB)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Lieferzeit 21-28 Tag (e)
auf Bestellung 23249 Stücke - Preis und Lieferfrist anzeigen
|
| BYV26C-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
auf Bestellung 4523 Stücke Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Lieferzeit 21-28 Tag (e)
auf Bestellung 33726 Stücke - Preis und Lieferfrist anzeigen
|
| BYW56-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Base Part Number: BYW56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 1000V 2A SOD57
Base Part Number: BYW56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1053 Stücke - Preis und Lieferfrist anzeigen
| BYW56-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYW56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1000V
auf Bestellung 1053 Stücke Description: DIODE AVALANCHE 1000V 2A SOD57
Diode Type: Avalanche
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: BYW56
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 4µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 1000V
Lieferzeit 21-28 Tag (e)
| SBYV28-200-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3.5A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.5 A
Mounting Type: Through Hole
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 20 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 3.5A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.5 A
Mounting Type: Through Hole
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 20 ns
auf Bestellung 2800 Stücke - Preis und Lieferfrist anzeigen
| UG4D-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
auf Bestellung 2800 Stücke Description: DIODE GEN PURP 200V 4A DO201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Lieferzeit 21-28 Tag (e)
auf Bestellung 5241 Stücke - Preis und Lieferfrist anzeigen
| UG4D-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO201AD
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2887 Stücke Description: DIODE GEN PURP 200V 4A DO201AD
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Current - Average Rectified (Io): 4A
Voltage - DC Reverse (Vr) (Max): 200V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5154 Stücke - Preis und Lieferfrist anzeigen
| ES3D-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 13902 Stücke - Preis und Lieferfrist anzeigen
| ES3D-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Part Status: Active
auf Bestellung 314 Stücke Description: DIODE GEN PURP 200V 3A DO214AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 13588 Stücke - Preis und Lieferfrist anzeigen
|
| ES3G-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: ES3
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
auf Bestellung 850 Stücke Description: DIODE GEN PURP 400V 3A DO214AB
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: ES3
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
Lieferzeit 21-28 Tag (e)
auf Bestellung 25099 Stücke - Preis und Lieferfrist anzeigen
| ES3G-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Base Part Number: ES3
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1125 Stücke Description: DIODE GEN PURP 400V 3A DO214AB
Base Part Number: ES3
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 400V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 24824 Stücke - Preis und Lieferfrist anzeigen
| ES3B-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 17850 Stücke Description: DIODE GEN PURP 100V 3A DO214AB
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 19114 Stücke - Preis und Lieferfrist anzeigen
| ES3B-E3/57T |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
auf Bestellung 18400 Stücke Description: DIODE GEN PURP 100V 3A DO214AB
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Lieferzeit 21-28 Tag (e)
auf Bestellung 18564 Stücke - Preis und Lieferfrist anzeigen
| BYV27-100-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 100V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Box (TB)
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
auf Bestellung 10921 Stücke - Preis und Lieferfrist anzeigen
| BYV27-100-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Reverse Recovery Time (trr): 25 ns
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
auf Bestellung 4619 Stücke Description: DIODE AVALANCHE 100V 2A SOD57
Reverse Recovery Time (trr): 25 ns
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Lieferzeit 21-28 Tag (e)
auf Bestellung 6302 Stücke - Preis und Lieferfrist anzeigen
|
| BYV27-100-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Avalanche
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
auf Bestellung 15000 Stücke Description: DIODE AVALANCHE 100V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Avalanche
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Lieferzeit 21-28 Tag (e)
auf Bestellung 32540 Stücke - Preis und Lieferfrist anzeigen
|
| BYV27-100-TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
auf Bestellung 32540 Stücke Description: DIODE AVALANCHE 100V 2A SOD57
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
|
| VS-MBRS130LTRPBF |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A SMB
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 1A SMB
Diode Type: Schottky
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
| BY269TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCH 1.6KV 800MA SOD57
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCH 1.6KV 800MA SOD57
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
auf Bestellung 653 Stücke - Preis und Lieferfrist anzeigen
| BY269TR |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCH 1.6KV 800MA SOD57
Reverse Recovery Time (trr): 400 ns
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
auf Bestellung 653 Stücke Description: DIODE AVALANCH 1.6KV 800MA SOD57
Reverse Recovery Time (trr): 400 ns
Diode Type: Avalanche
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Lieferzeit 21-28 Tag (e)
|
| SSC54-E3/9AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 4181 Stücke - Preis und Lieferfrist anzeigen
| SSC54-E3/9AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
auf Bestellung 3373 Stücke Description: DIODE SCHOTTKY 40V 5A DO214AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 808 Stücke - Preis und Lieferfrist anzeigen
|
| RS3K-E3/9AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 500ns
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke Description: DIODE GEN PURP 800V 3A DO214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 500ns
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 24554 Stücke - Preis und Lieferfrist anzeigen
| RS3K-E3/9AT |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO214AB
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
auf Bestellung 3554 Stücke Description: DIODE GEN PURP 800V 3A DO214AB
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 24500 Stücke - Preis und Lieferfrist anzeigen
| VS-15MQ040NTRPBF |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
auf Bestellung 18530 Stücke Description: DIODE SCHOTTKY 40V 1.5A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Lieferzeit 21-28 Tag (e)
auf Bestellung 148030 Stücke - Preis und Lieferfrist anzeigen
|
| VS-15MQ040NTRPBF |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 18530 Stücke Description: DIODE SCHOTTKY 40V 1.5A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 134pF @ 10V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 148030 Stücke - Preis und Lieferfrist anzeigen
|
| SB540-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 4200 Stücke Description: DIODE SCHOTTKY 40V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 204246 Stücke - Preis und Lieferfrist anzeigen
|
| SB540-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 4246 Stücke Description: DIODE SCHOTTKY 40V 5A DO201AD
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 204200 Stücke - Preis und Lieferfrist anzeigen
|
| SB520-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 5A DO201AD
Base Part Number: SB520
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 20V 5A DO201AD
Base Part Number: SB520
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1400 Stücke - Preis und Lieferfrist anzeigen
| SB530-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 5600 Stücke Description: DIODE SCHOTTKY 30V 5A DO201AD
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 9260 Stücke - Preis und Lieferfrist anzeigen
|
| SB530-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO201AD
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 6460 Stücke Description: DIODE SCHOTTKY 30V 5A DO201AD
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8400 Stücke - Preis und Lieferfrist anzeigen
|
| AS1PM-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO220
Package / Case: DO-220AA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A (DC)
Voltage - DC Reverse (Vr) (Max): 1000V
Base Part Number: AS1
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Diode Type: Avalanche
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE AVALANCHE 1KV 1.5A DO220
Package / Case: DO-220AA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A (DC)
Voltage - DC Reverse (Vr) (Max): 1000V
Base Part Number: AS1
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Diode Type: Avalanche
Part Status: Active
auf Bestellung 8701 Stücke - Preis und Lieferfrist anzeigen
| AS1PM-M3/84A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO220
Base Part Number: AS1
Operating Temperature - Junction: -55°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A (DC)
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 1550 Stücke Description: DIODE AVALANCHE 1KV 1.5A DO220
Base Part Number: AS1
Operating Temperature - Junction: -55°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Current - Average Rectified (Io): 1.5A (DC)
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Avalanche
Part Status: Active
Supplier Device Package: DO-220AA (SMP)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Reverse Recovery Time (trr): 1.5µs
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Lieferzeit 21-28 Tag (e)
auf Bestellung 7151 Stücke - Preis und Lieferfrist anzeigen
| UF5401-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 3425 Stücke - Preis und Lieferfrist anzeigen
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