Die Produkte vishay general semiconductor - diodes division

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BYS10-25-E3/TR BYS10-25-E3/TR bys10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
auf Bestellung 3600 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 25 V
auf Bestellung 4432 Stücke
Lieferzeit 21-28 Tag (e)
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BYS10-45-E3/TR BYS10-45-E3/TR bys10.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VS-11DQ04TR VS-11DQ04TR VS-11DQ03,04(M3).pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1.1A DO204AL
Current - Average Rectified (Io): 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-20E-E3/54 RGP02-20E-E3/54 rgp02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 2KV 500MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-16E-E3/54 RGP02-16E-E3/54 rgp02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 500MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-800-E3/96 BYM11-800-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 500ns
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Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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Lieferzeit 21-28 Tag (e)
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BYM11-600-E3/96 BYM11-600-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO213AB
Base Part Number: BYM11
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SS2P3-M3/84A SS2P3-M3/84A ss2p2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2P2-M3/84A SS2P2-M3/84A ss2p2.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB1H100-E3/73 SB1H100-E3/73 sb1h90.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1A DO204AL
Base Part Number: SB1H100
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1A DO204AL
Base Part Number: SB1H100
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7572 Stücke
Lieferzeit 21-28 Tag (e)
1N5061GP-E3/54 1N5061GP-E3/54 1n5059gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AC
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
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Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 3620 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.64 EUR
19+ 1.41 EUR
100+ 1.05 EUR
500+ 0.82 EUR
1000+ 0.64 EUR
2000+ 0.58 EUR
1N5059GP-E3/54 1N5059GP-E3/54 1n5059gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE20AFJ-M3/6A SE20AFJ-M3/6A se20afb.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 21000 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 2A DO221AC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
auf Bestellung 21477 Stücke
Lieferzeit 21-28 Tag (e)
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MURS160-E3/5BT MURS160-E3/5BT murs140.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 2A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
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3200+ 0.36 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 2A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 4800 Stücke
Lieferzeit 21-28 Tag (e)
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21+ 1.27 EUR
26+ 1.03 EUR
100+ 0.7 EUR
500+ 0.53 EUR
1000+ 0.4 EUR
1N5619GP-E3/54 1N5619GP-E3/54 1n5615gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AC
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Base Part Number: 1N5619
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Current - Reverse Leakage @ Vr: 500nA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AC
Current - Reverse Leakage @ Vr: 500nA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Packaging: Cut Tape (CT)
Part Status: Active
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N5619
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
1N5615GP-E3/54 1N5615GP-E3/54 1n5615gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AC
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 1N5615
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AC
Base Part Number: 1N5615
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2865 Stücke
Lieferzeit 21-28 Tag (e)
1N5617GP-E3/54 1N5617GP-E3/54 1n5615gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AC
Base Part Number: 1N5617
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AC
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N5617
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
auf Bestellung 12232 Stücke
Lieferzeit 21-28 Tag (e)
1N5621GP-E3/54 1N5621GP-E3/54 1n5615gp.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO204AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5621
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS26SHE3/61T SS26SHE3/61T ss26s.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-1000-E3/96 BYM11-1000-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7213 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 48 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7213 Stücke - Preis und Lieferfrist anzeigen
RGP02-16E-E3/73 RGP02-16E-E3/73 rgp02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 500MA DO204
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
RGP02-12E-E3/73 RGP02-12E-E3/73 rgp02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 500MA DO204
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
auf Bestellung 2989 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 500MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 393 Stücke
Lieferzeit 21-28 Tag (e)
18+ 1.46 EUR
21+ 1.28 EUR
100+ 0.99 EUR
US1GHE3/5AT US1GHE3/5AT us1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214AC
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90000 Stücke - Preis und Lieferfrist anzeigen
SS2P5-M3/84A SS2P5-M3/84A ss2p5.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 2A DO220AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
auf Bestellung 18000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
auf Bestellung 19125 Stücke
Lieferzeit 21-28 Tag (e)
BYG10J-E3/TR BYG10J-E3/TR byg10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1.5A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5482 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1.5A
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 918 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5482 Stücke - Preis und Lieferfrist anzeigen
BYG10G-E3/TR BYG10G-E3/TR byg10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 1.5A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13886 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
auf Bestellung 25 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13886 Stücke - Preis und Lieferfrist anzeigen
BYG10D-E3/TR BYG10D-E3/TR byg10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19070 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.5A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
auf Bestellung 908 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19070 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
32+ 0.83 EUR
100+ 0.56 EUR
500+ 0.42 EUR
GL41M-E3/96 GL41M-E3/96 bym10-xxx.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: GL41
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GL41
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 13572 Stücke
Lieferzeit 21-28 Tag (e)
GL41J-E3/96 GL41J-E3/96 bym10-xxx.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GI250-4-E3/54 GI250-4-E3/54 gi2501.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 4KV 250MA DO204
Base Part Number: GI250
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 4000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 4000V
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 4KV 250MA DO204
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 4000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 4000V
Diode Type: Standard
Part Status: Active
Base Part Number: GI250
auf Bestellung 7360 Stücke
Lieferzeit 21-28 Tag (e)
SS1P3L-M3/84A SS1P3L-M3/84A ss1p3l.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
auf Bestellung 42000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3990 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.36 EUR
6000+ 0.34 EUR
15000+ 0.33 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1.5A DO220AA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 43661 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3990 Stücke - Preis und Lieferfrist anzeigen
21+ 1.27 EUR
26+ 1.03 EUR
100+ 0.71 EUR
500+ 0.53 EUR
1000+ 0.4 EUR
BYG23M-E3/TR BYG23M-E3/TR byg23m.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 54000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 146705 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.36 EUR
3600+ 0.33 EUR
5400+ 0.31 EUR
12600+ 0.3 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 1KV 1.5A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
auf Bestellung 55750 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 146705 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
28+ 0.93 EUR
100+ 0.64 EUR
500+ 0.48 EUR
ES07D-GS08 ES07D-GS08 es07b.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1.2A DO219AB
Current - Reverse Leakage @ Vr: 10µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES07
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 50MHz
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 27800 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1.2A DO219AB
Base Part Number: ES07
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 50MHz
Current - Reverse Leakage @ Vr: 10µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 4306 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 27800 Stücke - Preis und Lieferfrist anzeigen
SL02-GS08 SL02-GS08 sl02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 1.1A DO219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 250µA @ 20V
Reverse Recovery Time (trr): 10ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1.1A
Current - Average Rectified (Io): 1.1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SL02
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18831 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 1.1A DO219AB
Supplier Device Package: DO-219AB (SMF)
Base Part Number: SL02
Operating Temperature - Junction: 125°C (Max)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 250µA @ 20V
Reverse Recovery Time (trr): 10ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1.1A
Current - Average Rectified (Io): 1.1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 13071 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18831 Stücke - Preis und Lieferfrist anzeigen
SL04-HE3-08 SL04-HE3-08 sl04.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
SL03-GS08 SL03-GS08 sl02.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1.1A DO219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.1A
Voltage - Forward (Vf) (Max) @ If: 430mV @ 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 130µA @ 30V
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 125°C (Max)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SL03
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Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1.1A DO219AB
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.1A
Voltage - Forward (Vf) (Max) @ If: 430mV @ 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 130µA @ 30V
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 125°C (Max)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SL03
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BYG20J-E3/TR BYG20J-E3/TR byg20d.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
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1800+ 0.32 EUR
3600+ 0.29 EUR
5400+ 0.27 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 600V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
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Lieferzeit 21-28 Tag (e)
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26+ 1.01 EUR
32+ 0.83 EUR
100+ 0.57 EUR
500+ 0.43 EUR
BYG20G-E3/TR BYG20G-E3/TR byg20d.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 400V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYG20D-E3/TR BYG20D-E3/TR byg20d.pdf Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE AVALANCHE 200V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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SB220-E3/54 SB220-E3/54 sb220.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 20V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SB220
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL41M-E3/96 RGL41M-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41G-E3/96 RGL41G-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO213AB
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41J-E3/96 RGL41J-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL41D-E3/96 RGL41D-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL41B-E3/96 RGL41B-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL41K-E3/96 RGL41K-E3/96 bym1150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS1H10-E3/61T SS1H10-E3/61T ss1h9.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYM12-200-E3/96 BYM12-200-E3/96 egl41.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO213AB
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Base Part Number: BYM12
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: BYM12
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
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SS1H9-E3/61T SS1H9-E3/61T ss1h9.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 90V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 90V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 21435 Stücke
Lieferzeit 21-28 Tag (e)
GL34J-E3/83 GL34J-E3/83 gl34a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 500MA DO213
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 500MA DO213
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
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Lieferzeit 21-28 Tag (e)
25+ 1.07 EUR
29+ 0.91 EUR
SB260-E3/73 SB260-E3/73 sb220.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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Lieferzeit 21-28 Tag (e)
2000+ 0.32 EUR
6000+ 0.3 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 2A DO204AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 1132 Stücke
Lieferzeit 21-28 Tag (e)
23+ 1.14 EUR
29+ 0.92 EUR
100+ 0.62 EUR
500+ 0.47 EUR
1000+ 0.35 EUR
MUR160-E3/54 MUR160-E3/54 MUR1x0-E3,.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYS10-25-E3/TR bys10.pdf
BYS10-25-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
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Lieferzeit 21-28 Tag (e)
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BYS10-25-E3/TR bys10.pdf
BYS10-25-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 25 V
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BYS10-45-E3/TR техническая информация bys10.pdf
BYS10-45-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13970 Stücke - Preis und Lieferfrist anzeigen
VS-11DQ04TR VS-11DQ03,04(M3).pdf
VS-11DQ04TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.1A DO204AL
Current - Average Rectified (Io): 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-20E-E3/54 rgp02.pdf
RGP02-20E-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 500MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 2000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGP02-16E-E3/54 rgp02.pdf
RGP02-16E-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 500MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-800-E3/96 bym1150.pdf
BYM11-800-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 500ns
auf Bestellung 1500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5553 Stücke - Preis und Lieferfrist anzeigen
BYM11-800-E3/96 bym1150.pdf
BYM11-800-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 800V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 1693 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5360 Stücke - Preis und Lieferfrist anzeigen
BYM11-600-E3/96 bym1150.pdf
BYM11-600-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Base Part Number: BYM11
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2701 Stücke - Preis und Lieferfrist anzeigen
SS2P3-M3/84A ss2p2.pdf
SS2P3-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS2P2-M3/84A ss2p2.pdf
SS2P2-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SB1H100-E3/73 sb1h90.pdf
SB1H100-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO204AL
Base Part Number: SB1H100
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Box (TB)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7572 Stücke - Preis und Lieferfrist anzeigen
SB1H100-E3/73 sb1h90.pdf
SB1H100-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO204AL
Base Part Number: SB1H100
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 7572 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
1N5061GP-E3/54 1n5059gp.pdf
1N5061GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AC
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3620 Stücke - Preis und Lieferfrist anzeigen
1N5061GP-E3/54 1n5059gp.pdf
1N5061GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 3620 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
16+ 1.64 EUR
19+ 1.41 EUR
100+ 1.05 EUR
500+ 0.82 EUR
1000+ 0.64 EUR
2000+ 0.58 EUR
1N5059GP-E3/54 1n5059gp.pdf
1N5059GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SE20AFJ-M3/6A se20afb.pdf
SE20AFJ-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 21000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30748 Stücke - Preis und Lieferfrist anzeigen
SE20AFJ-M3/6A se20afb.pdf
SE20AFJ-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO221AC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SE20
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 1.2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A (DC)
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
auf Bestellung 21477 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30271 Stücke - Preis und Lieferfrist anzeigen
MURS160-E3/5BT murs140.pdf
MURS160-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6137 Stücke - Preis und Lieferfrist anzeigen
3200+ 0.36 EUR
MURS160-E3/5BT murs140.pdf
MURS160-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 4800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4537 Stücke - Preis und Lieferfrist anzeigen
21+ 1.27 EUR
26+ 1.03 EUR
100+ 0.7 EUR
500+ 0.53 EUR
1000+ 0.4 EUR
1N5619GP-E3/54 1n5615gp.pdf
1N5619GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AC
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Base Part Number: 1N5619
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Current - Reverse Leakage @ Vr: 500nA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
1N5619GP-E3/54 1n5615gp.pdf
1N5619GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AC
Current - Reverse Leakage @ Vr: 500nA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Packaging: Cut Tape (CT)
Part Status: Active
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N5619
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
1N5615GP-E3/54 1n5615gp.pdf
1N5615GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AC
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 1N5615
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2865 Stücke - Preis und Lieferfrist anzeigen
1N5615GP-E3/54 1n5615gp.pdf
1N5615GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AC
Base Part Number: 1N5615
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2865 Stücke
Lieferzeit 21-28 Tag (e)
1N5617GP-E3/54 1n5615gp.pdf
1N5617GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AC
Base Part Number: 1N5617
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12232 Stücke - Preis und Lieferfrist anzeigen
1N5617GP-E3/54 1n5615gp.pdf
1N5617GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AC
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: 1N5617
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
auf Bestellung 12232 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
1N5621GP-E3/54 1n5615gp.pdf
1N5621GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AC
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5621
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS26SHE3/61T ss26s.pdf
SS26SHE3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BYM11-1000-E3/96 bym1150.pdf
BYM11-1000-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYM11-1000-E3/96 bym1150.pdf
BYM11-1000-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 48 Stücke
Lieferzeit 21-28 Tag (e)
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RGP02-16E-E3/73 rgp02.pdf
RGP02-16E-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 500MA DO204
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGP02-12E-E3/73 rgp02.pdf
RGP02-12E-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 500MA DO204
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
auf Bestellung 2989 Stücke
Lieferzeit 21-28 Tag (e)
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RGP02-12E-E3/73 rgp02.pdf
RGP02-12E-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 500MA DO204
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 500mA
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 393 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2989 Stücke - Preis und Lieferfrist anzeigen
18+ 1.46 EUR
21+ 1.28 EUR
100+ 0.99 EUR
US1GHE3/5AT us1.pdf
US1GHE3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SS2P5-M3/84A ss2p5.pdf
SS2P5-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
auf Bestellung 18000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19125 Stücke - Preis und Lieferfrist anzeigen
SS2P5-M3/84A ss2p5.pdf
SS2P5-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
auf Bestellung 19125 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
BYG10J-E3/TR byg10.pdf
BYG10J-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYG10J-E3/TR byg10.pdf
BYG10J-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 918 Stücke
Lieferzeit 21-28 Tag (e)
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BYG10G-E3/TR byg10.pdf
BYG10G-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYG10G-E3/TR byg10.pdf
BYG10G-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
auf Bestellung 25 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13886 Stücke - Preis und Lieferfrist anzeigen
BYG10D-E3/TR byg10.pdf
BYG10D-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYG10D-E3/TR byg10.pdf
BYG10D-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.5A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
auf Bestellung 908 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19070 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
32+ 0.83 EUR
100+ 0.56 EUR
500+ 0.42 EUR
GL41M-E3/96 bym10-xxx.pdf
GL41M-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: GL41
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13572 Stücke - Preis und Lieferfrist anzeigen
GL41M-E3/96 bym10-xxx.pdf
GL41M-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: GL41
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 13572 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
GL41J-E3/96 bym10-xxx.pdf
GL41J-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GI250-4-E3/54 gi2501.pdf
GI250-4-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 4KV 250MA DO204
Base Part Number: GI250
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 4000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 4000V
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7360 Stücke - Preis und Lieferfrist anzeigen
GI250-4-E3/54 gi2501.pdf
GI250-4-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 4KV 250MA DO204
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 4000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 4000V
Diode Type: Standard
Part Status: Active
Base Part Number: GI250
auf Bestellung 7360 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5500 Stücke - Preis und Lieferfrist anzeigen
SS1P3L-M3/84A ss1p3l.pdf
SS1P3L-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
auf Bestellung 42000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47651 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.36 EUR
6000+ 0.34 EUR
15000+ 0.33 EUR
SS1P3L-M3/84A ss1p3l.pdf
SS1P3L-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1.5A DO220AA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-220AA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 43661 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 45990 Stücke - Preis und Lieferfrist anzeigen
21+ 1.27 EUR
26+ 1.03 EUR
100+ 0.71 EUR
500+ 0.53 EUR
1000+ 0.4 EUR
BYG23M-E3/TR byg23m.pdf
BYG23M-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 54000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 202455 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.36 EUR
3600+ 0.33 EUR
5400+ 0.31 EUR
12600+ 0.3 EUR
BYG23M-E3/TR byg23m.pdf
BYG23M-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
auf Bestellung 55750 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200705 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
28+ 0.93 EUR
100+ 0.64 EUR
500+ 0.48 EUR
ES07D-GS08 es07b.pdf
ES07D-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.2A DO219AB
Current - Reverse Leakage @ Vr: 10µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: ES07
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 50MHz
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 32106 Stücke - Preis und Lieferfrist anzeigen
ES07D-GS08 es07b.pdf
ES07D-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.2A DO219AB
Base Part Number: ES07
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 50MHz
Current - Reverse Leakage @ Vr: 10µA @ 200V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 4306 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30800 Stücke - Preis und Lieferfrist anzeigen
SL02-GS08 sl02.pdf
SL02-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1.1A DO219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 250µA @ 20V
Reverse Recovery Time (trr): 10ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1.1A
Current - Average Rectified (Io): 1.1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SL02
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
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Lieferzeit 21-28 Tag (e)
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SL02-GS08 sl02.pdf
SL02-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1.1A DO219AB
Supplier Device Package: DO-219AB (SMF)
Base Part Number: SL02
Operating Temperature - Junction: 125°C (Max)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 250µA @ 20V
Reverse Recovery Time (trr): 10ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1.1A
Current - Average Rectified (Io): 1.1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
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SL04-HE3-08 sl04.pdf
SL04-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SL04-HE3-08 sl04.pdf
SL04-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1.1A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
SL03-GS08 sl02.pdf
SL03-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1.1A DO219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.1A
Voltage - Forward (Vf) (Max) @ If: 430mV @ 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 130µA @ 30V
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 125°C (Max)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SL03
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SL03-GS08 sl02.pdf
SL03-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1.1A DO219AB
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.1A
Voltage - Forward (Vf) (Max) @ If: 430mV @ 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 130µA @ 30V
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 125°C (Max)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SL03
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BYG20J-E3/TR byg20d.pdf
BYG20J-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
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1800+ 0.32 EUR
3600+ 0.29 EUR
5400+ 0.27 EUR
BYG20J-E3/TR byg20d.pdf
BYG20J-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Avalanche
Mounting Type: Surface Mount
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26+ 1.01 EUR
32+ 0.83 EUR
100+ 0.57 EUR
500+ 0.43 EUR
BYG20G-E3/TR byg20d.pdf
BYG20G-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYG20D-E3/TR byg20d.pdf
BYG20D-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYG20D-E3/TR byg20d.pdf
BYG20D-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1.5A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Diode Type: Avalanche
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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SB220-E3/54 sb220.pdf
SB220-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 20V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SB220
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL41M-E3/96 bym1150.pdf
RGL41M-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41G-E3/96 bym1150.pdf
RGL41G-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
RGL41J-E3/96 bym1150.pdf
RGL41J-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL41D-E3/96 bym1150.pdf
RGL41D-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL41B-E3/96 bym1150.pdf
RGL41B-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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RGL41K-E3/96 bym1150.pdf
RGL41K-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SS1H10-E3/61T ss1h9.pdf
SS1H10-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BYM12-200-E3/96 egl41.pdf
BYM12-200-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Base Part Number: BYM12
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
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BYM12-200-E3/96 egl41.pdf
BYM12-200-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: BYM12
Manufacturer: Vishay General Semiconductor - Diodes Division
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
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SS1H9-E3/61T ss1h9.pdf
SS1H9-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SS1H9-E3/61T ss1h9.pdf
SS1H9-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 21435 Stücke
Lieferzeit 21-28 Tag (e)
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GL34J-E3/83 gl34a.pdf
GL34J-E3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 500MA DO213
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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GL34J-E3/83 gl34a.pdf
GL34J-E3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 500MA DO213
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 48 Stücke
Lieferzeit 21-28 Tag (e)
25+ 1.07 EUR
29+ 0.91 EUR
SB260-E3/73 sb220.pdf
SB260-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1132 Stücke - Preis und Lieferfrist anzeigen
2000+ 0.32 EUR
6000+ 0.3 EUR
SB260-E3/73 sb220.pdf
SB260-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO204AC
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 1132 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
29+ 0.92 EUR
100+ 0.62 EUR
500+ 0.47 EUR
1000+ 0.35 EUR
MUR160-E3/54 MUR1x0-E3,.pdf
MUR160-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 75 ns
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