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89CNQ150A 89CNQ150A Vishay General Semiconductor - Diodes Division 89CNQ(A).pdf Description: DIODE ARRAY SCHOTTKY 150V D618
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83CNQ080ASL 83CNQ080ASL Vishay General Semiconductor - Diodes Division VS-83CNQ080A,100A.pdf Description: DIODE ARR SCHOTT 80V 80A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 80 V
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208CNQ060 208CNQ060 Vishay General Semiconductor - Diodes Division 208CNQ060.pdf Description: DIODE MODULE 60V 100A TO244AB
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UFB200FA40 UFB200FA40 Vishay General Semiconductor - Diodes Division UFB200FA40.pdf Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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GA200SA60U GA200SA60U Vishay General Semiconductor - Diodes Division ga200sa60u.pdf description Description: IGBT MOD 600V 200A 500W SOT227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V
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GA200SA60S GA200SA60S Vishay General Semiconductor - Diodes Division ga200sa60s.pdf Description: IGBT MOD 600V 200A 630W SOT227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
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113CNQ100ASL 113CNQ100ASL Vishay General Semiconductor - Diodes Division VS-113CNQ100APbF.pdf Description: DIODE ARR SCHOTT 100V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 55 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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87CNQ020ASL 87CNQ020ASL Vishay General Semiconductor - Diodes Division VS-87CNQ020A.pdf Description: DIODE ARR SCHOTT 20V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 40 A
Current - Reverse Leakage @ Vr: 5.5 mA @ 20 V
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85CNQ015ASL 85CNQ015ASL Vishay General Semiconductor - Diodes Division VS-85CNQ015APbF.pdf Description: DIODE ARR SCHOTT 15V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 80 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
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87CNQ020A 87CNQ020A Vishay General Semiconductor - Diodes Division VS-87CNQ020A.pdf Description: DIODE ARRAY SCHOTTKY 20V D618
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110CNQ045ASL 110CNQ045ASL Vishay General Semiconductor - Diodes Division VS-110CNQ045APBF.pdf Description: DIODE ARR SCHOTT 45V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 55 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
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83CNQ100ASL 83CNQ100ASL Vishay General Semiconductor - Diodes Division VS-83CNQ080A,100A.pdf Description: DIODE ARR SCHOTT 100V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
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83CNQ100ASM 83CNQ100ASM Vishay General Semiconductor - Diodes Division VS-83CNQ080A,100A.pdf Description: DIODE ARR SCHOTT 100V 40A D618SM
Packaging: Bulk
Package / Case: D-61-8-SM
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SM
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
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82CNQ030ASM 82CNQ030ASM Vishay General Semiconductor - Diodes Division VS-82CNQ030A.pdf Description: DIODE ARRAY SCHOTTKY 30V D618SM
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UFB200FA20 UFB200FA20 Vishay General Semiconductor - Diodes Division UFB200FA20.pdf Description: DIODE MODULE GP 200V 120A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: SOT-227
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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81CNQ035A 81CNQ035A Vishay General Semiconductor - Diodes Division VS-81CNQyyyAPbF.pdf Description: DIODE ARRAY SCHOTTKY 35V D618
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83CNQ080A 83CNQ080A Vishay General Semiconductor - Diodes Division VS-83CNQ080A,100A.pdf Description: DIODE ARRAY SCHOTTKY 80V D618
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80CNQ035A 80CNQ035A Vishay General Semiconductor - Diodes Division 80CNQyyyA.pdf Description: DIODE ARRAY SCHOTTKY 35V D618
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81CNQ045A 81CNQ045A Vishay General Semiconductor - Diodes Division VS-81CNQyyyAPbF.pdf Description: DIODE ARRAY SCHOTTKY 45V D618
Packaging: Bulk
Package / Case: D-61-8
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
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81CNQ040A 81CNQ040A Vishay General Semiconductor - Diodes Division VS-81CNQyyyAPbF.pdf Description: DIODE ARRAY SCHOTTKY 40V D618
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80CNQ040A 80CNQ040A Vishay General Semiconductor - Diodes Division 80CNQyyyA.pdf Description: DIODE ARRAY SCHOTTKY 40V D618
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89CNQ135A 89CNQ135A Vishay General Semiconductor - Diodes Division 89CNQ(A).pdf Description: DIODE ARRAY SCHOTTKY 135V D618
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409DMQ135 409DMQ135 Vishay General Semiconductor - Diodes Division 409DMQ.pdf Description: DIODE MOD SCHOTTKY 135V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 135 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 400 A
Current - Reverse Leakage @ Vr: 6 mA @ 135 V
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4GBL01 4GBL01 Vishay General Semiconductor - Diodes Division 4GBL.pdf Description: BRIDGE RECT 3PHASE 100V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1N6392 1N6392 Vishay General Semiconductor - Diodes Division 1N6392.pdf Description: DIODE SCHOTTKY 45V 60A DO203AB
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15ETH06 15ETH06 Vishay General Semiconductor - Diodes Division 15ETH06%28FP%29_Rev.Nov08.pdf Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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15ETH03 15ETH03 Vishay General Semiconductor - Diodes Division 15ETH03.pdf Description: DIODE STANDARD 300V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
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10TTS08S 10TTS08S Vishay General Semiconductor - Diodes Division 10TTS08S.pdf Description: SCR 800V 10A D2PAK
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10TTS08 10TTS08 Vishay General Semiconductor - Diodes Division 10TTS08.pdf Description: SCR 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 6.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.15 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
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VS-150EBU04 VS-150EBU04 Vishay General Semiconductor - Diodes Division Description: DIODE STD 400V 150A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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40TPS12A 40TPS12A Vishay General Semiconductor - Diodes Division 40TPS.pdf Description: SCR 1.2KV 55A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
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VS-80EBU02 VS-80EBU02 Vishay General Semiconductor - Diodes Division 80EBU02.pdf Description: DIODE STANDARD 200V 80A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowIRtab™
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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VS-150EBU02 VS-150EBU02 Vishay General Semiconductor - Diodes Division VS-150EBU02.pdf Description: DIODE STD 200V 150A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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8ETH03-1 8ETH03-1 Vishay General Semiconductor - Diodes Division 8ETH03%28S%2C-1%29.pdf Description: DIODE STANDARD 300V 8A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
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MBRD650CT MBRD650CT Vishay General Semiconductor - Diodes Division MBRD650CT%2C660CT.pdf Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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8ETH03S 8ETH03S Vishay General Semiconductor - Diodes Division 8ETH03%28S%2C-1%29.pdf Description: DIODE STANDARD 300V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
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8ETH06 8ETH06 Vishay General Semiconductor - Diodes Division 8ETH06%28S%2C-1%29.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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8ETH03 8ETH03 Vishay General Semiconductor - Diodes Division 8ETH03.PbF.pdf Description: DIODE STANDARD 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
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8ETH06-1 8ETH06-1 Vishay General Semiconductor - Diodes Division 8ETH06%28S%2C-1%29.pdf Description: DIODE STANDARD 600V 8A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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8ETH06S 8ETH06S Vishay General Semiconductor - Diodes Division 8ETH06%28S%2C-1%29.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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HFA08SD60S HFA08SD60S Vishay General Semiconductor - Diodes Division hfa08sd60s.pdf Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA04SD60S HFA04SD60S Vishay General Semiconductor - Diodes Division HFA04SD60S.pdf Description: DIODE STANDARD 600V 4A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
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MBRB1035 MBRB1035 Vishay General Semiconductor - Diodes Division MBR(F,B)1035%20-%201060.pdf Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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MBR1535CT-1 MBR1535CT-1 Vishay General Semiconductor - Diodes Division MBRB15.pdf Description: DIODE ARR SCHOT 35V 7.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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30CPH03 30CPH03 Vishay General Semiconductor - Diodes Division 30CPH03.pdf Description: DIODE ARRAY GP 300V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Produkt ist nicht verfügbar
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30EPH03 30EPH03 Vishay General Semiconductor - Diodes Division 30EPH03.pdf Description: DIODE GP 300V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
Produkt ist nicht verfügbar
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15ETH06-1 15ETH06-1 Vishay General Semiconductor - Diodes Division 15ETH06S%2C-1.pdf Description: DIODE STANDARD 600V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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15ETH06S 15ETH06S Vishay General Semiconductor - Diodes Division 15ETH06S%2C-1.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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15ETH03-1 15ETH03-1 Vishay General Semiconductor - Diodes Division 15ETH03S%2C-1.pdf Description: DIODE STANDARD 300V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Produkt ist nicht verfügbar
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15ETH03S 15ETH03S Vishay General Semiconductor - Diodes Division 15ETH03S%2C-1.pdf Description: DIODE STANDARD 300V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Produkt ist nicht verfügbar
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HFA15TB60-1 HFA15TB60-1 Vishay General Semiconductor - Diodes Division HFA15TB60%2C-1.pdf Description: DIODE STANDARD 600V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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STPS20L15G STPS20L15G Vishay General Semiconductor - Diodes Division STPS20L15G.pdf Description: DIODE SCHOTTKY 15V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 19 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar
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16CTU04S 16CTU04S Vishay General Semiconductor - Diodes Division 16CTU04,S,-1.pdf Description: DIODE ARRAY GP 400V D2PAK D2PAK
Produkt ist nicht verfügbar
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32CTQ030-1 32CTQ030-1 Vishay General Semiconductor - Diodes Division 32CTQ%28S%2C-1%29.pdf Description: DIODE ARR SCHOTT 30V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Produkt ist nicht verfügbar
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20CTQ045-1 20CTQ045-1 Vishay General Semiconductor - Diodes Division 20CTQyyy%28S%2C-1%29.pdf Description: DIODE ARR SCHOTT 45V 10A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
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40CTQ045-1 40CTQ045-1 Vishay General Semiconductor - Diodes Division 40CTQ045S%2C-1.pdf Description: DIODE ARR SCHOTT 45V 20A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Produkt ist nicht verfügbar
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30CPU04 30CPU04 Vishay General Semiconductor - Diodes Division 30CPU04.pdf Description: DIODE ARRAY GP 400V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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60APU02 60APU02 Vishay General Semiconductor - Diodes Division 60EPU02%2C%2060APU02.pdf Description: DIODE STANDARD 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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60EPU02 60EPU02 Vishay General Semiconductor - Diodes Division 60EPU02%2C%2060APU02.pdf description Description: DIODE STANDARD 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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10WQ045FN 10WQ045FN Vishay General Semiconductor - Diodes Division 10WQ045FN.pdf Description: DIODE SCHOTTKY 45V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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89CNQ150A 89CNQ(A).pdf
89CNQ150A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V D618
Produkt ist nicht verfügbar
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83CNQ080ASL VS-83CNQ080A,100A.pdf
83CNQ080ASL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 80A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 80 V
Produkt ist nicht verfügbar
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208CNQ060 208CNQ060.pdf
208CNQ060
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 60V 100A TO244AB
Produkt ist nicht verfügbar
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UFB200FA40 UFB200FA40.pdf
UFB200FA40
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
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GA200SA60U description ga200sa60u.pdf
GA200SA60U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 200A 500W SOT227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.5 nF @ 30 V
Produkt ist nicht verfügbar
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GA200SA60S ga200sa60s.pdf
GA200SA60S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 200A 630W SOT227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Produkt ist nicht verfügbar
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113CNQ100ASL VS-113CNQ100APbF.pdf
113CNQ100ASL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 55 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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87CNQ020ASL VS-87CNQ020A.pdf
87CNQ020ASL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 20V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 40 A
Current - Reverse Leakage @ Vr: 5.5 mA @ 20 V
Produkt ist nicht verfügbar
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85CNQ015ASL VS-85CNQ015APbF.pdf
85CNQ015ASL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 15V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 80 A
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
Produkt ist nicht verfügbar
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87CNQ020A VS-87CNQ020A.pdf
87CNQ020A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 20V D618
Produkt ist nicht verfügbar
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110CNQ045ASL VS-110CNQ045APBF.pdf
110CNQ045ASL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 55A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 55 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Produkt ist nicht verfügbar
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83CNQ100ASL VS-83CNQ080A,100A.pdf
83CNQ100ASL
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 40A D618SL
Packaging: Bulk
Package / Case: D-61-8-SL
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
Produkt ist nicht verfügbar
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83CNQ100ASM VS-83CNQ080A,100A.pdf
83CNQ100ASM
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 40A D618SM
Packaging: Bulk
Package / Case: D-61-8-SM
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8-SM
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 80 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
Produkt ist nicht verfügbar
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82CNQ030ASM VS-82CNQ030A.pdf
82CNQ030ASM
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SM
Produkt ist nicht verfügbar
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UFB200FA20 UFB200FA20.pdf
UFB200FA20
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 200V 120A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: SOT-227
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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81CNQ035A VS-81CNQyyyAPbF.pdf
81CNQ035A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 35V D618
Produkt ist nicht verfügbar
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83CNQ080A VS-83CNQ080A,100A.pdf
83CNQ080A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 80V D618
Produkt ist nicht verfügbar
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80CNQ035A 80CNQyyyA.pdf
80CNQ035A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 35V D618
Produkt ist nicht verfügbar
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81CNQ045A VS-81CNQyyyAPbF.pdf
81CNQ045A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V D618
Packaging: Bulk
Package / Case: D-61-8
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: D-61-8
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Produkt ist nicht verfügbar
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81CNQ040A VS-81CNQyyyAPbF.pdf
81CNQ040A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V D618
Produkt ist nicht verfügbar
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80CNQ040A 80CNQyyyA.pdf
80CNQ040A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V D618
Produkt ist nicht verfügbar
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89CNQ135A 89CNQ(A).pdf
89CNQ135A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 135V D618
Produkt ist nicht verfügbar
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409DMQ135 409DMQ.pdf
409DMQ135
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD SCHOTTKY 135V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 135 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 400 A
Current - Reverse Leakage @ Vr: 6 mA @ 135 V
Produkt ist nicht verfügbar
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4GBL01 4GBL.pdf
4GBL01
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 100V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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1N6392 1N6392.pdf
1N6392
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 60A DO203AB
Produkt ist nicht verfügbar
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15ETH06 15ETH06%28FP%29_Rev.Nov08.pdf
15ETH06
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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15ETH03 15ETH03.pdf
15ETH03
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Produkt ist nicht verfügbar
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10TTS08S 10TTS08S.pdf
10TTS08S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A D2PAK
Produkt ist nicht verfügbar
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10TTS08 10TTS08.pdf
10TTS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 6.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.15 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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VS-150EBU04
VS-150EBU04
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 150A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
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40TPS12A 40TPS.pdf
40TPS12A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 55A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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VS-80EBU02 80EBU02.pdf
VS-80EBU02
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 80A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowIRtab™
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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VS-150EBU02 VS-150EBU02.pdf
VS-150EBU02
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 150A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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8ETH03-1 8ETH03%28S%2C-1%29.pdf
8ETH03-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 8A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Produkt ist nicht verfügbar
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MBRD650CT MBRD650CT%2C660CT.pdf
MBRD650CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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8ETH03S 8ETH03%28S%2C-1%29.pdf
8ETH03S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Produkt ist nicht verfügbar
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8ETH06 8ETH06%28S%2C-1%29.pdf
8ETH06
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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8ETH03 8ETH03.PbF.pdf
8ETH03
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Produkt ist nicht verfügbar
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8ETH06-1 8ETH06%28S%2C-1%29.pdf
8ETH06-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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8ETH06S 8ETH06%28S%2C-1%29.pdf
8ETH06S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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HFA08SD60S hfa08sd60s.pdf
HFA08SD60S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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HFA04SD60S HFA04SD60S.pdf
HFA04SD60S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Produkt ist nicht verfügbar
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MBRB1035 MBR(F,B)1035%20-%201060.pdf
MBRB1035
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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MBR1535CT-1 MBRB15.pdf
MBR1535CT-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 35V 7.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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30CPH03 30CPH03.pdf
30CPH03
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Produkt ist nicht verfügbar
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30EPH03 30EPH03.pdf
30EPH03
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 300V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
Produkt ist nicht verfügbar
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15ETH06-1 15ETH06S%2C-1.pdf
15ETH06-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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15ETH06S 15ETH06S%2C-1.pdf
15ETH06S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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15ETH03-1 15ETH03S%2C-1.pdf
15ETH03-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
15ETH03S 15ETH03S%2C-1.pdf
15ETH03S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Produkt ist nicht verfügbar
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HFA15TB60-1 HFA15TB60%2C-1.pdf
HFA15TB60-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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STPS20L15G STPS20L15G.pdf
STPS20L15G
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 19 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Produkt ist nicht verfügbar
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16CTU04S 16CTU04,S,-1.pdf
16CTU04S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V D2PAK D2PAK
Produkt ist nicht verfügbar
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32CTQ030-1 32CTQ%28S%2C-1%29.pdf
32CTQ030-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Produkt ist nicht verfügbar
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20CTQ045-1 20CTQyyy%28S%2C-1%29.pdf
20CTQ045-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 10A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
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40CTQ045-1 40CTQ045S%2C-1.pdf
40CTQ045-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Produkt ist nicht verfügbar
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30CPU04 30CPU04.pdf
30CPU04
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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60APU02 60EPU02%2C%2060APU02.pdf
60APU02
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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60EPU02 description 60EPU02%2C%2060APU02.pdf
60EPU02
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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10WQ045FN 10WQ045FN.pdf
10WQ045FN
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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