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1.5KA9.1AHE3/73 Vishay General Semiconductor - Diodes Division 1.5KA6.8%20thru%201.5KA47A.pdf Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
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1.5KA22HE3/54 Vishay General Semiconductor - Diodes Division 1.5KA6.8%20thru%201.5KA47A.pdf Description: TVS DIODE 17.8VWM 31.9VC 1.5KA
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1.5KA39HE3/73 Vishay General Semiconductor - Diodes Division 1.5KA6.8%20thru%201.5KA47A.pdf Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
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1.5KA39HE3/54 Vishay General Semiconductor - Diodes Division 1.5KA6.8%20thru%201.5KA47A.pdf Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
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1.5KA47HE3/51 Vishay General Semiconductor - Diodes Division 1.5KA6.8%20thru%201.5KA47A.pdf Description: TVS DIODE 38.1VWM 67.8VC 1.5KA
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1.5KA47AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KA6.8%20thru%201.5KA47A.pdf Description: TVS DIODE 40.2VWM 64.8VC 1.5KA
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1.5KA22AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KA6.8%20thru%201.5KA47A.pdf Description: TVS DIODE 18.8VWM 30.6VC 1.5KA
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BAS40-02V-HG3-08 BAS40-02V-HG3-08 Vishay General Semiconductor - Diodes Division bas40-02v.pdf Description: DIODE SCHOTTKY 40V 120MA SOD523
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 120mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
Grade: Automotive
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAS40-02V-HG3-08 BAS40-02V-HG3-08 Vishay General Semiconductor - Diodes Division bas40-02v.pdf Description: DIODE SCHOTTKY 40V 120MA SOD523
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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VX80M100PW-M3/P VX80M100PW-M3/P Vishay General Semiconductor - Diodes Division vx80m100pw.pdf Description: DIODE ARR SCHOT 100V 40A TO247AD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 600 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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VX80M100PWHM3/P VX80M100PWHM3/P Vishay General Semiconductor - Diodes Division vx80m100pw.pdf Description: DIODE ARR SCHOT 100V 40A TO247AD
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TPC9.1AHM3_A/H TPC9.1AHM3_A/H Vishay General Semiconductor - Diodes Division TPC6.8A_-_TPC51A.pdf Description: TVS DIODE 7.78VWM 13.4VC TO277A
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1.5SMC9.1CAHM3_A/H 1.5SMC9.1CAHM3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1CAHE3_A/I 1.5SMC9.1CAHE3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC SMC
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1.5SMC9.1AHM3_A/I 1.5SMC9.1AHM3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1AHM3/H 1.5SMC9.1AHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1CAHM3_A/I 1.5SMC9.1CAHM3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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1.5SMC9.1CAHM3/H 1.5SMC9.1CAHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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TPSMC9.1AHE3_B/I Vishay General Semiconductor - Diodes Division tpsmc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
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BZX55B4V3-TR BZX55B4V3-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 4.3V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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BZX55B4V3-TR BZX55B4V3-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 4.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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BZX55B6V8-TR BZX55B6V8-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
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BZX55B6V8-TR BZX55B6V8-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
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BZT55B18-GS08 BZT55B18-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
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BZT55B18-GS08 BZT55B18-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
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BZT55B2V7-GS18 BZT55B2V7-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 2.7V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT55B2V7-GS18 BZT55B2V7-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 2.7V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
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BZT55B3V9-GS08 BZT55B3V9-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
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BZT55B3V9-GS08 BZT55B3V9-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
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BZT55C3V6-GS18 BZT55C3V6-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT55C3V6-GS18 BZT55C3V6-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
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BZT55C3V0-GS08 BZT55C3V0-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Qualification: AEC-Q101
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BZT55C3V0-GS08 BZT55C3V0-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Qualification: AEC-Q101
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BZT52C12-G3-08 BZT52C12-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
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BZT52C12-G3-08 BZT52C12-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 13862 Stücke:
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55+0.38 EUR
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1000+0.15 EUR
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MMSZ5237C-E3-18 MMSZ5237C-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
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MMSZ5237C-E3-18 MMSZ5237C-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 8.2V 500MW SOD123
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40+0.52 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
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MMSZ5237B-E3-08 MMSZ5237B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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MMSZ5237B-E3-08 MMSZ5237B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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SMCJ100CAHE3_A/H SMCJ100CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
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SMCJ100CAHM3/I SMCJ100CAHM3/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 9.3A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SMCJ100CAHE3_A/I SMCJ100CAHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
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BZX84B6V2-HE3-08 BZX84B6V2-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 6.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B6V2-HE3-08 BZX84B6V2-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 6.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AS1FD-M3/H AS1FD-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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AS1FMHM3/H AS1FMHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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AS1FK-M3/H AS1FK-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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AS1FDHM3/H AS1FDHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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AS1FGHM3/H AS1FGHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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AS1FJHM3/H AS1FJHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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3000+0.15 EUR
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AS1FKHM3/H AS1FKHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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3000+0.2 EUR
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AS1FG-M3/H AS1FG-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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AS1FJ-M3/H AS1FJ-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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3000+0.18 EUR
9000+0.15 EUR
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VS-15TQ060STRL-M3 VS-15TQ060STRL-M3 Vishay General Semiconductor - Diodes Division vs-15tq060s-m3.pdf Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
auf Bestellung 2760 Stücke:
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8+2.7 EUR
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VS-15TQ060STRL-M3 VS-15TQ060STRL-M3 Vishay General Semiconductor - Diodes Division vs-15tq060s-m3.pdf Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
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SMCJ100CAHM3_A/H SMCJ100CAHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
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SMCJ100CAHM3_A/I SMCJ100CAHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
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VT6045CBP-M3/4W VT6045CBP-M3/4W Vishay General Semiconductor - Diodes Division vt6045cb.pdf Description: DIODE ARR SCHOTT 45V 30A TO2203
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
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VFT3045CBP-M3/4W VFT3045CBP-M3/4W Vishay General Semiconductor - Diodes Division vft345cb.pdf Description: DIODE ARR SCHOT 45V 15A ITO220AB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
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ES2BHE3_A/I ES2BHE3_A/I Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE STANDARD 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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1.5KA9.1AHE3/73 1.5KA6.8%20thru%201.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC 1.5KA
Produkt ist nicht verfügbar
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1.5KA22HE3/54 1.5KA6.8%20thru%201.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.8VWM 31.9VC 1.5KA
Produkt ist nicht verfügbar
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1.5KA39HE3/73 1.5KA6.8%20thru%201.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
Produkt ist nicht verfügbar
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1.5KA39HE3/54 1.5KA6.8%20thru%201.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 31.6VWM 56.4VC 1.5KA
Produkt ist nicht verfügbar
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1.5KA47HE3/51 1.5KA6.8%20thru%201.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 38.1VWM 67.8VC 1.5KA
Produkt ist nicht verfügbar
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1.5KA47AHE3/51 1.5KA6.8%20thru%201.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC 1.5KA
Produkt ist nicht verfügbar
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1.5KA22AHE3/51 1.5KA6.8%20thru%201.5KA47A.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.8VWM 30.6VC 1.5KA
Produkt ist nicht verfügbar
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BAS40-02V-HG3-08 bas40-02v.pdf
BAS40-02V-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 120MA SOD523
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 120mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
Grade: Automotive
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAS40-02V-HG3-08 bas40-02v.pdf
BAS40-02V-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 120MA SOD523
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: SOD-523
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2332 Stücke:
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59+0.36 EUR
85+0.25 EUR
111+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.12 EUR
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VX80M100PW-M3/P vx80m100pw.pdf
VX80M100PW-M3/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 40A TO247AD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 600 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.28 EUR
25+5.94 EUR
100+4.9 EUR
500+4.07 EUR
1000+3.8 EUR
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VX80M100PWHM3/P vx80m100pw.pdf
VX80M100PWHM3/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 40A TO247AD
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.88 EUR
25+6.93 EUR
100+5.75 EUR
500+4.8 EUR
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TPC9.1AHM3_A/H TPC6.8A_-_TPC51A.pdf
TPC9.1AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC TO277A
Produkt ist nicht verfügbar
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1.5SMC9.1CAHM3_A/H 15smc.pdf
1.5SMC9.1CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1CAHE3_A/I 15smc.pdf
1.5SMC9.1CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC SMC
Produkt ist nicht verfügbar
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1.5SMC9.1AHM3_A/I 15smc.pdf
1.5SMC9.1AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1AHM3/H 15smc.pdf
1.5SMC9.1AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1CAHM3_A/I 15smc.pdf
1.5SMC9.1CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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1.5SMC9.1CAHM3/H 15smc.pdf
1.5SMC9.1CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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TPSMC9.1AHE3_B/I tpsmc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
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BZX55B4V3-TR bzx55.pdf
BZX55B4V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZX55B4V3-TR bzx55.pdf
BZX55B4V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17542 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
127+0.17 EUR
Mindestbestellmenge: 91 Stücke
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BZX55B6V8-TR bzx55.pdf
BZX55B6V8-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.056 EUR
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BZX55B6V8-TR bzx55.pdf
BZX55B6V8-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
auf Bestellung 13712 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
139+0.15 EUR
321+0.065 EUR
500+0.062 EUR
1000+0.057 EUR
2000+0.054 EUR
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BZT55B18-GS08 bzt55.pdf
BZT55B18-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.074 EUR
5000+0.068 EUR
Mindestbestellmenge: 2500 Stücke
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BZT55B18-GS08 bzt55.pdf
BZT55B18-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Qualification: AEC-Q101
auf Bestellung 12253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
50+0.43 EUR
101+0.21 EUR
500+0.18 EUR
1000+0.12 EUR
Mindestbestellmenge: 34 Stücke
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BZT55B2V7-GS18 bzt55.pdf
BZT55B2V7-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZT55B2V7-GS18 bzt55.pdf
BZT55B2V7-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 6330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
50+0.43 EUR
101+0.21 EUR
500+0.18 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.098 EUR
Mindestbestellmenge: 34 Stücke
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BZT55B3V9-GS08 bzt55.pdf
BZT55B3V9-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.14 EUR
5000+0.13 EUR
7500+0.12 EUR
12500+0.11 EUR
Mindestbestellmenge: 2500 Stücke
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BZT55B3V9-GS08 bzt55.pdf
BZT55B3V9-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 15809 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32 Stücke
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BZT55C3V6-GS18 bzt55.pdf
BZT55C3V6-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZT55C3V6-GS18 bzt55.pdf
BZT55C3V6-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 4791 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
43+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.19 EUR
Mindestbestellmenge: 27 Stücke
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BZT55C3V0-GS08 bzt55.pdf
BZT55C3V0-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.18 EUR
5000+0.17 EUR
7500+0.15 EUR
Mindestbestellmenge: 2500 Stücke
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BZT55C3V0-GS08 bzt55.pdf
BZT55C3V0-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10664 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
43+0.5 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.2 EUR
Mindestbestellmenge: 26 Stücke
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BZT52C12-G3-08 bzt52-g.pdf
BZT52C12-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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BZT52C12-G3-08 bzt52-g.pdf
BZT52C12-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 13862 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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MMSZ5237C-E3-18 mmsz5225.pdf
MMSZ5237C-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MMSZ5237C-E3-18 mmsz5225.pdf
MMSZ5237C-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
auf Bestellung 8013 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
40+0.52 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.098 EUR
Mindestbestellmenge: 34 Stücke
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MMSZ5237B-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5237B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.089 EUR
6000+0.08 EUR
9000+0.075 EUR
Mindestbestellmenge: 3000 Stücke
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MMSZ5237B-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5237B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
auf Bestellung 14855 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
103+0.2 EUR
200+0.1 EUR
500+0.099 EUR
1000+0.094 EUR
Mindestbestellmenge: 72 Stücke
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SMCJ100CAHE3_A/H smcj.pdf
SMCJ100CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 3400 Stücke
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SMCJ100CAHM3/I smcj.pdf
SMCJ100CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 162V
Voltage - Breakdown (Min): 111V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 100V
Current - Peak Pulse (10/1000µs): 9.3A
Applications: Automotive, Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMCJ100CAHE3_A/I smcj.pdf
SMCJ100CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
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BZX84B6V2-HE3-08 bzx84_series.pdf
BZX84B6V2-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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BZX84B6V2-HE3-08 bzx84_series.pdf
BZX84B6V2-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q101
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AS1FD-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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3000+0.13 EUR
6000+0.12 EUR
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AS1FMHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FMHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.19 EUR
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AS1FK-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FK-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
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3000+0.19 EUR
6000+0.17 EUR
15000+0.15 EUR
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AS1FDHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FDHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.17 EUR
9000+0.15 EUR
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AS1FGHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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3000+0.15 EUR
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AS1FJHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FJHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.15 EUR
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AS1FKHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FKHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.19 EUR
9000+0.17 EUR
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AS1FG-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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3000+0.13 EUR
6000+0.12 EUR
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AS1FJ-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FJ-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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3000+0.18 EUR
9000+0.15 EUR
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VS-15TQ060STRL-M3 vs-15tq060s-m3.pdf
VS-15TQ060STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
auf Bestellung 2760 Stücke:
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8+2.7 EUR
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VS-15TQ060STRL-M3 vs-15tq060s-m3.pdf
VS-15TQ060STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
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800+1.58 EUR
1600+1.46 EUR
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SMCJ100CAHM3_A/H smcj.pdf
SMCJ100CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
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SMCJ100CAHM3_A/I smcj.pdf
SMCJ100CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
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VT6045CBP-M3/4W vt6045cb.pdf
VT6045CBP-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO2203
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Diode Configuration: 1 Pair Common Cathode
auf Bestellung 1623 Stücke:
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VFT3045CBP-M3/4W vft345cb.pdf
VFT3045CBP-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
auf Bestellung 234 Stücke:
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ES2BHE3_A/I es2.pdf
ES2BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 3200 Stücke:
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3200+0.32 EUR
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