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ES2BHE3_A/I ES2BHE3_A/I Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE STANDARD 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
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TPSMB8.2AHE3_A/I TPSMB8.2AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
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TPSMB8.2AHE3_A/H TPSMB8.2AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
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TPSMB8.2HE3/52T TPSMB8.2HE3/52T Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 6.63VWM 12.5VC DO214AA
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TPSMB8.2AHM3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
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TPSMB8.2A1BHE3_A/I TPSMB8.2A1BHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 600W SMB DO214AA
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TPSMB8.2AHM3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
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TPSMB8.2A1BHE3/5BT TPSMB8.2A1BHE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
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TPSMB8.2HE3/5BT TPSMB8.2HE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 6.63VWM 12.5VC DO214AA
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1N5223B-T 1N5223B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.7V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
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1N5245B-T 1N5245B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
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VS-E5TX3012S2LHM3 VS-E5TX3012S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2lhm3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
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VS-E5TX3006S2LHM3 VS-E5TX3006S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2lhm3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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VS-E5TX3006S2LHM3 VS-E5TX3006S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2lhm3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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BZG05C3V9-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 3.9V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZG05C3V9-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 3.9V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZG05C39-M3-08 BZG05C39-M3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 39V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
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BZG05C39-M3-08 BZG05C39-M3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 39V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
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BZG05C39-M3-18 BZG05C39-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 39V 1.25W DO214AC
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BZG05C3V9-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
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BZG05C39-HM3-18 BZG05C39-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 39V 1.25W DO214AC
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MCL103C-TR MCL103C-TR Vishay General Semiconductor - Diodes Division mcl103a.pdf Description: DIODE SCHOTT 20V 200MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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MCL103C-TR MCL103C-TR Vishay General Semiconductor - Diodes Division mcl103a.pdf Description: DIODE SCHOTT 20V 200MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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S1FLM-GS18 S1FLM-GS18 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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S1FLM-GS18 S1FLM-GS18 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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LS4448GS18 LS4448GS18 Vishay General Semiconductor - Diodes Division ls4148.pdf Description: DIODE GP 75V 150MA SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Packaging: Tape & Reel (TR)
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LS4448GS18 LS4448GS18 Vishay General Semiconductor - Diodes Division ls4148.pdf Description: DIODE GP 75V 150MA SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Packaging: Cut Tape (CT)
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BYVB32-150HE3_A/I BYVB32-150HE3_A/I Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 150V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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BYVB32-50HE3_A/P BYVB32-50HE3_A/P Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 50V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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BYVB32-50HE3_A/I BYVB32-50HE3_A/I Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 50V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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BYVB32-100HE3_A/P BYVB32-100HE3_A/P Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 100V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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BYVB32-100HE3_A/I BYVB32-100HE3_A/I Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 100V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYVB32-150HE3_A/P BYVB32-150HE3_A/P Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 150V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBU4A-1M3/51 GBU4A-1M3/51 Vishay General Semiconductor - Diodes Division GBU4x-M3_ProdBundle_Aug5%2C2015.pdf Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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GBU4A-1E3/51 GBU4A-1E3/51 Vishay General Semiconductor - Diodes Division GBU4x_ProdBundle_Aug5%2C2015.pdf Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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TZX24C-TR TZX24C-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 24V 500MW DO204AH
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
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TZX24C-TR TZX24C-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
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TZX24B-TR TZX24B-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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TZX24B-TR TZX24B-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
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SMCG188CA-E3/57T SMCG188CA-E3/57T Vishay General Semiconductor - Diodes Division smcg.pdf Description: TVS DIODE 188VWM 328VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 328V
Voltage - Breakdown (Min): 209V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCG)
Voltage - Reverse Standoff (Typ): 188V
Current - Peak Pulse (10/1000µs): 4.6A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMCG188CA-E3/59T SMCG188CA-E3/59T Vishay General Semiconductor - Diodes Division smcg.pdf Description: TVS DIODE 188VWM 328VC DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 328V
Voltage - Breakdown (Min): 209V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCG)
Voltage - Reverse Standoff (Typ): 188V
Current - Peak Pulse (10/1000µs): 4.6A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Produkt ist nicht verfügbar
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TZX15A-TR TZX15A-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 15V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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TZX15A-TR TZX15A-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 15V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-204AH, DO-35, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
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262+0.08 EUR
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2000+0.057 EUR
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SMCJ36CAHM3_A/H SMCJ36CAHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 25.8A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SMCJ36CAHM3_A/H SMCJ36CAHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 25.8A
Applications: Telecom
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SMCJ36CAHE3_A/H SMCJ36CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 25.8A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Power Line Protection: No
Packaging: Tape & Reel (TR)
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SMCJ36CAHE3_A/H SMCJ36CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Grade: Automotive
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 25.8A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
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V6PW12CHM3/I V6PW12CHM3/I Vishay General Semiconductor - Diodes Division v6pw12c.pdf Description: DIODE ARR SCHOT 120V 3A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V6PW12C-M3/I V6PW12C-M3/I Vishay General Semiconductor - Diodes Division v6pw12c.pdf Description: DIODE ARR SCHOT 120V 3A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V10PW12CHM3/I V10PW12CHM3/I Vishay General Semiconductor - Diodes Division v10pw12c.pdf Description: DIODE ARR SCHOT 120V 5A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V10PW12C-M3/I V10PW12C-M3/I Vishay General Semiconductor - Diodes Division v10pw12c.pdf Description: DIODE ARR SCHOT 120V 5A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PLZ20B-HG3_A/H PLZ20B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 19.11V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.11 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 15 V
Produkt ist nicht verfügbar
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PLZ20B-HG3_A/H PLZ20B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 19.11V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 19.11 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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TLZ20B-GS08 TLZ20B-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 20V 500MW SOD80
Current - Reverse Leakage @ Vr: 40 nA @ 17.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLZ20B-GS08 TLZ20B-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 20V 500MW SOD80
Current - Reverse Leakage @ Vr: 40 nA @ 17.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
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42+0.5 EUR
51+0.42 EUR
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500+0.14 EUR
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BZX84B3V0-HE3-08 BZX84B3V0-HE3-08 Vishay General Semiconductor - Diodes Division bzx84v.pdf Description: DIODE ZENER 3V 300MW SOT23-3
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3000+0.088 EUR
6000+0.076 EUR
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BZX84B3V0-HE3-08 BZX84B3V0-HE3-08 Vishay General Semiconductor - Diodes Division bzx84v.pdf Description: DIODE ZENER 3V 300MW SOT23-3
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42+0.5 EUR
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500+0.14 EUR
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BAT86S-TAP BAT86S-TAP Vishay General Semiconductor - Diodes Division bat86s.pdf Description: DIODE SCHOTTKY 50V 200MA DO204AH
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
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35+0.61 EUR
58+0.36 EUR
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BAT86S-TAP BAT86S-TAP Vishay General Semiconductor - Diodes Division bat86s.pdf Description: DIODE SCHOTTKY 50V 200MA DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
auf Bestellung 30000 Stücke:
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10000+0.1 EUR
20000+0.093 EUR
30000+0.088 EUR
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VS-50PF40 Vishay General Semiconductor - Diodes Division vs-50pfrwseries.pdf Description: DIODE GEN PURP 400V 50A DO203AB
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 180°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
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ES2BHE3_A/I es2.pdf
ES2BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
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100+0.58 EUR
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TPSMB8.2AHE3_A/I tpsmb.pdf
TPSMB8.2AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
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TPSMB8.2AHE3_A/H tpsmb.pdf
TPSMB8.2AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
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TPSMB8.2HE3/52T tpsmb.pdf
TPSMB8.2HE3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.63VWM 12.5VC DO214AA
Produkt ist nicht verfügbar
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TPSMB8.2AHM3_A/I tpsmb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
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TPSMB8.2A1BHE3_A/I tpsmb.pdf
TPSMB8.2A1BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 600W SMB DO214AA
Produkt ist nicht verfügbar
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TPSMB8.2AHM3_A/H tpsmb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
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TPSMB8.2A1BHE3/5BT tpsmb.pdf
TPSMB8.2A1BHE3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
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TPSMB8.2HE3/5BT tpsmb.pdf
TPSMB8.2HE3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.63VWM 12.5VC DO214AA
Produkt ist nicht verfügbar
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1N5223B-T 1n5221.pdf
1N5223B-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
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1N5245B-T 1n5221.pdf
1N5245B-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
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VS-E5TX3012S2LHM3 vs-e5tx3012s2lhm3.pdf
VS-E5TX3012S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1649 Stücke:
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3+8.85 EUR
10+5.85 EUR
100+4.15 EUR
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VS-E5TX3006S2LHM3 vs-e5tx3006s2lhm3.pdf
VS-E5TX3006S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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800+2.81 EUR
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VS-E5TX3006S2LHM3 vs-e5tx3006s2lhm3.pdf
VS-E5TX3006S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1561 Stücke:
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3+7.79 EUR
10+5.13 EUR
100+3.61 EUR
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BZG05C3V9-M3-18 bzg05c-m-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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BZG05C3V9-M3-18 bzg05c-m-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 5990 Stücke:
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13+1.62 EUR
21+1.01 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
2000+0.4 EUR
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BZG05C39-M3-08 bzg05c-m-series.pdf
BZG05C39-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
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1500+0.24 EUR
3000+0.21 EUR
4500+0.2 EUR
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BZG05C39-M3-08 bzg05c-m-series.pdf
BZG05C39-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
auf Bestellung 5750 Stücke:
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28+0.77 EUR
40+0.52 EUR
100+0.36 EUR
500+0.27 EUR
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BZG05C39-M3-18 bzg05c-m-series.pdf
BZG05C39-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.25W DO214AC
Produkt ist nicht verfügbar
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BZG05C3V9-HM3-18 bzg05c-m-series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG05C39-HM3-18 bzg05c-m-series.pdf
BZG05C39-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.25W DO214AC
Produkt ist nicht verfügbar
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MCL103C-TR mcl103a.pdf
MCL103C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 20V 200MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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2500+0.19 EUR
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MCL103C-TR mcl103a.pdf
MCL103C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 20V 200MA MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
auf Bestellung 12765 Stücke:
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21+1 EUR
29+0.75 EUR
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S1FLM-GS18 s1flbdgjkm.pdf
S1FLM-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
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10000+0.1 EUR
20000+0.094 EUR
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S1FLM-GS18 s1flbdgjkm.pdf
S1FLM-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 46899 Stücke:
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33+0.65 EUR
48+0.44 EUR
100+0.23 EUR
500+0.18 EUR
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LS4448GS18 ls4148.pdf
LS4448GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LS4448GS18 ls4148.pdf
LS4448GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA SOD80
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 QuadroMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Packaging: Cut Tape (CT)
auf Bestellung 9110 Stücke:
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112+0.19 EUR
162+0.13 EUR
238+0.088 EUR
500+0.067 EUR
1000+0.06 EUR
2000+0.054 EUR
5000+0.046 EUR
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BYVB32-150HE3_A/I byv32.pdf
BYVB32-150HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 150V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYVB32-50HE3_A/P byv32.pdf
BYVB32-50HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 50V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYVB32-50HE3_A/I byv32.pdf
BYVB32-50HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 50V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYVB32-100HE3_A/P byv32.pdf
BYVB32-100HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYVB32-100HE3_A/I byv32.pdf
BYVB32-100HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYVB32-150HE3_A/P byv32.pdf
BYVB32-150HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 150V 18A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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GBU4A-1M3/51 GBU4x-M3_ProdBundle_Aug5%2C2015.pdf
GBU4A-1M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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GBU4A-1E3/51 GBU4x_ProdBundle_Aug5%2C2015.pdf
GBU4A-1E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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TZX24C-TR tzxserie.pdf
TZX24C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.061 EUR
20000+0.055 EUR
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TZX24C-TR tzxserie.pdf
TZX24C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 28996 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
304+0.069 EUR
341+0.062 EUR
500+0.058 EUR
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TZX24B-TR tzxserie.pdf
TZX24B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.061 EUR
20000+0.055 EUR
Mindestbestellmenge: 10000 Stücke
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TZX24B-TR tzxserie.pdf
TZX24B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 28495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
129+0.17 EUR
290+0.073 EUR
500+0.069 EUR
1000+0.063 EUR
2000+0.062 EUR
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SMCG188CA-E3/57T smcg.pdf
SMCG188CA-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 328V
Voltage - Breakdown (Min): 209V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCG)
Voltage - Reverse Standoff (Typ): 188V
Current - Peak Pulse (10/1000µs): 4.6A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMCG188CA-E3/59T smcg.pdf
SMCG188CA-E3/59T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 328V
Voltage - Breakdown (Min): 209V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCG)
Voltage - Reverse Standoff (Typ): 188V
Current - Peak Pulse (10/1000µs): 4.6A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Produkt ist nicht verfügbar
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TZX15A-TR tzxserie.pdf
TZX15A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.054 EUR
Mindestbestellmenge: 10000 Stücke
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TZX15A-TR tzxserie.pdf
TZX15A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Package / Case: DO-204AH, DO-35, Axial
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
auf Bestellung 29242 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
113+0.19 EUR
262+0.08 EUR
500+0.073 EUR
1000+0.064 EUR
2000+0.057 EUR
5000+0.048 EUR
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SMCJ36CAHM3_A/H smcj.pdf
SMCJ36CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 25.8A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
850+0.86 EUR
1700+0.67 EUR
2550+0.65 EUR
Mindestbestellmenge: 850 Stücke
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SMCJ36CAHM3_A/H smcj.pdf
SMCJ36CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 25.8A
Applications: Telecom
auf Bestellung 3383 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
12+1.78 EUR
100+1.18 EUR
Mindestbestellmenge: 8 Stücke
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SMCJ36CAHE3_A/H smcj.pdf
SMCJ36CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 25.8A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Power Line Protection: No
Packaging: Tape & Reel (TR)
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
850+0.81 EUR
1700+0.69 EUR
2550+0.68 EUR
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SMCJ36CAHE3_A/H smcj.pdf
SMCJ36CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AB
Grade: Automotive
Voltage - Breakdown (Min): 40V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 25.8A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
auf Bestellung 3067 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
Mindestbestellmenge: 28 Stücke
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V6PW12CHM3/I v6pw12c.pdf
V6PW12CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 3A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V6PW12C-M3/I v6pw12c.pdf
V6PW12C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 3A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V10PW12CHM3/I v10pw12c.pdf
V10PW12CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 5A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V10PW12C-M3/I v10pw12c.pdf
V10PW12C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 5A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 120 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
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PLZ20B-HG3_A/H plzseries.pdf
PLZ20B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19.11V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.11 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 15 V
Produkt ist nicht verfügbar
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PLZ20B-HG3_A/H plzseries.pdf
PLZ20B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 19.11V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 19.11 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 1723 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
36+0.6 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.14 EUR
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TLZ20B-GS08 tlz.pdf
TLZ20B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD80
Current - Reverse Leakage @ Vr: 40 nA @ 17.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLZ20B-GS08 tlz.pdf
TLZ20B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD80
Current - Reverse Leakage @ Vr: 40 nA @ 17.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
auf Bestellung 2054 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
51+0.42 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.099 EUR
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BZX84B3V0-HE3-08 bzx84v.pdf
BZX84B3V0-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 300MW SOT23-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.088 EUR
6000+0.076 EUR
Mindestbestellmenge: 3000 Stücke
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BZX84B3V0-HE3-08 bzx84v.pdf
BZX84B3V0-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 300MW SOT23-3
auf Bestellung 14840 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
51+0.42 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.098 EUR
Mindestbestellmenge: 42 Stücke
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BAT86S-TAP bat86s.pdf
BAT86S-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 200MA DO204AH
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
auf Bestellung 8298 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
58+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
5000+0.11 EUR
Mindestbestellmenge: 35 Stücke
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BAT86S-TAP bat86s.pdf
BAT86S-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 200MA DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.1 EUR
20000+0.093 EUR
30000+0.088 EUR
Mindestbestellmenge: 10000 Stücke
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VS-50PF40 vs-50pfrwseries.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 50A DO203AB
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 125 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 180°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.64 EUR
10+12.32 EUR
Mindestbestellmenge: 2 Stücke
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