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BZX384C16-HG3-08 BZX384C16-HG3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 16V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14760 Stücke:
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67+0.26 EUR
96+0.18 EUR
197+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
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12CWQ04FNTR 12CWQ04FNTR Vishay General Semiconductor - Diodes Division 12CWQ04FN.pdf Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Produkt ist nicht verfügbar
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SMF5V0A-HM3-08 SMF5V0A-HM3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 5VWM 9.2VC SMF
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMF5V0A-HM3-08 SMF5V0A-HM3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 5VWM 9.2VC SMF
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26649 Stücke:
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SMF5V0A-M3-18 SMF5V0A-M3-18 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 5VWM 9.2VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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SMF5V0A-M3-18 SMF5V0A-M3-18 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 5VWM 9.2VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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SMF5V0A-HE3-08 SMF5V0A-HE3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 5VWM 9.2VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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SMF5V0A-HE3-08 SMF5V0A-HE3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 5VWM 9.2VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMF5V0A-E3-18 SMF5V0A-E3-18 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 5VWM 9.2VC SMF
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 40000 Stücke:
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SMF5V0A-E3-18 SMF5V0A-E3-18 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 5VWM 9.2VC SMF
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 48865 Stücke:
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SB230-E3/54 SB230-E3/54 Vishay General Semiconductor - Diodes Division sb220.pdf Description: DIODE SCHOTTKY 30V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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SB230-E3/54 SB230-E3/54 Vishay General Semiconductor - Diodes Division sb220.pdf Description: DIODE SCHOTTKY 30V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 2678 Stücke:
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VS-4EGH06-M3/5BT VS-4EGH06-M3/5BT Vishay General Semiconductor - Diodes Division vs-4egh06-m3.pdf Description: DIODE GEN PURP 600V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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VS-4EGH06-M3/5BT VS-4EGH06-M3/5BT Vishay General Semiconductor - Diodes Division vs-4egh06-m3.pdf Description: DIODE GEN PURP 600V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 3601 Stücke:
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SE40NJ-M3/I SE40NJ-M3/I Vishay General Semiconductor - Diodes Division se40nd_se40ng_se40nj.pdf Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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14000+0.20 EUR
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SE40NJ-M3/I SE40NJ-M3/I Vishay General Semiconductor - Diodes Division se40nd_se40ng_se40nj.pdf Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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27+0.66 EUR
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5000+0.22 EUR
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SE40NJHM3/I SE40NJHM3/I Vishay General Semiconductor - Diodes Division se40nd_se40ng_se40nj.pdf Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SE40NJHM3/I SE40NJHM3/I Vishay General Semiconductor - Diodes Division se40nd_se40ng_se40nj.pdf Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 14300 Stücke:
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RGP10JE-E3/54 RGP10JE-E3/54 Vishay General Semiconductor - Diodes Division rgp10a.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RGP10JE-E3/54 RGP10JE-E3/54 Vishay General Semiconductor - Diodes Division rgp10a.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SMAJ100AHM3/I SMAJ100AHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 100VWM 162VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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VS-1N1186RA VS-1N1186RA Vishay General Semiconductor - Diodes Division vs-1n1183series.pdf Description: DIODE STD REV 200V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 126 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 200 V
auf Bestellung 22 Stücke:
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1+20.98 EUR
10+14.62 EUR
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VS-40HFR10 VS-40HFR10 Vishay General Semiconductor - Diodes Division vs-40hfrseries.pdf Description: DIODE GEN PURP 100V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 9 mA @ 100 V
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2+9.56 EUR
10+8.02 EUR
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VS-85HFR80 VS-85HFR80 Vishay General Semiconductor - Diodes Division vs-85hfrseries.pdf Description: DIODE GEN PURP 800V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 800 V
auf Bestellung 300 Stücke:
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1+19.78 EUR
10+17.44 EUR
100+15.08 EUR
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VS-1N3768 VS-1N3768 Vishay General Semiconductor - Diodes Division vs-1n1183series.pdf Description: DIODE STANDARD 1000V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 110 A
Current - Reverse Leakage @ Vr: 2 mA @ 1000 V
auf Bestellung 93 Stücke:
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VS-85HF10 VS-85HF10 Vishay General Semiconductor - Diodes Division vs-85hfrseries.pdf Description: DIODE GEN PURP 100V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 100 V
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1+18.87 EUR
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VS-40HFR80M VS-40HFR80M Vishay General Semiconductor - Diodes Division vs-40hfrseries.pdf Description: DIODE GP REV 800V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
auf Bestellung 94 Stücke:
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1+28.41 EUR
10+21.02 EUR
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VS-12CDU06HM3/I VS-12CDU06HM3/I Vishay General Semiconductor - Diodes Division vs-12cdu06hm3.pdf Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-12CDU06HM3/I VS-12CDU06HM3/I Vishay General Semiconductor - Diodes Division vs-12cdu06hm3.pdf Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1641 Stücke:
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10+1.93 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.15 EUR
Mindestbestellmenge: 7
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SM6S10AHE3_A/I SM6S10AHE3_A/I Vishay General Semiconductor - Diodes Division sm6s.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 4600W (4.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SM5S10AHE3_A/I SM5S10AHE3_A/I Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ160CAHE3_A/H SMBJ160CAHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160CAHM3/I SMBJ160CAHM3/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMBJ160CA58HE3_A/I SMBJ160CA58HE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160CAHM3/H SMBJ160CAHM3/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMBJ160CAHE3_A/I SMBJ160CAHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160CA58HE3/5B SMBJ160CA58HE3/5B Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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NSB8MTHE3_B/I NSB8MTHE3_B/I Vishay General Semiconductor - Diodes Division ns8xt.pdf Description: DIODE GEN PURP 1KV 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSB8MTHE3_B/P NSB8MTHE3_B/P Vishay General Semiconductor - Diodes Division ns8xt.pdf Description: DIODE GEN PURP 1KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2000 Stücke:
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7+2.59 EUR
10+2.31 EUR
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500+1.49 EUR
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SMA6F6.0A-M3/6A SMA6F6.0A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 6VWM 13.7VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.7V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Part Status: Active
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3500+0.23 EUR
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SMA6F6.0A-M3/6A SMA6F6.0A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 6VWM 13.7VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.7V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 6492 Stücke:
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25+0.72 EUR
31+0.57 EUR
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500+0.30 EUR
1000+0.27 EUR
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DZ23C3V3-G3-08 DZ23C3V3-G3-08 Vishay General Semiconductor - Diodes Division dz23-g_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
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3000+0.09 EUR
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9000+0.08 EUR
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DZ23C3V3-G3-08 DZ23C3V3-G3-08 Vishay General Semiconductor - Diodes Division dz23-g_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
auf Bestellung 14960 Stücke:
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VS-16EDH02-M3/I VS-16EDH02-M3/I Vishay General Semiconductor - Diodes Division vs-16edh02-m3.pdf Description: DIODE STANDARD 200V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Produkt ist nicht verfügbar
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VS-16EDH02-M3/I VS-16EDH02-M3/I Vishay General Semiconductor - Diodes Division vs-16edh02-m3.pdf Description: DIODE STANDARD 200V 16A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
auf Bestellung 1829 Stücke:
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500+1.08 EUR
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VS-25FR80 VS-25FR80 Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
auf Bestellung 100 Stücke:
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2+10.47 EUR
10+7.38 EUR
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VS-25FR20 VS-25FR20 Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE GEN PURP 200V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
auf Bestellung 85 Stücke:
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3+8.48 EUR
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VS-25FR80M VS-25FR80M Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE GP REV 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 100 Stücke:
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2+16.40 EUR
10+11.82 EUR
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VS-25F80M VS-25F80M Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 100 Stücke:
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2+17.53 EUR
10+15.03 EUR
100+12.52 EUR
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VS-3C10ET07T-M3 VS-3C10ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 3047 Stücke:
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3+8.34 EUR
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100+6.13 EUR
500+5.22 EUR
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VS-3C04ET07T-M3 VS-3C04ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c04et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1962 Stücke:
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5+3.77 EUR
50+3.03 EUR
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500+2.11 EUR
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VS-3C08ET07T-M3 VS-3C08ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c08et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1934 Stücke:
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VS-3C16ET07T-M3 VS-3C16ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c16et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1500 Stücke:
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500+8.15 EUR
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VS-3C12ET07S2L-M3 VS-3C12ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 800 Stücke:
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VS-3C12ET07S2L-M3 VS-3C12ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1557 Stücke:
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VS-3C06ET07T-M3 VS-3C06ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c06et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 3370 Stücke:
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VS-3C10ET07S2L-M3 VS-3C10ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2400 Stücke:
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800+5.53 EUR
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VS-3C10ET07S2L-M3 VS-3C10ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2450 Stücke:
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2+8.84 EUR
10+7.93 EUR
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VS-3C12ET07T-M3 VS-3C12ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1500 Stücke:
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2+10.16 EUR
10+9.12 EUR
100+7.47 EUR
500+6.36 EUR
1000+5.58 EUR
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VS-3C20ET07T-M3 VS-3C20ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c20et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 996 Stücke:
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2+16.72 EUR
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500+10.94 EUR
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BZX384C16-HG3-08 bzx384g.pdf
BZX384C16-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14760 Stücke:
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Anzahl Preis
67+0.26 EUR
96+0.18 EUR
197+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
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12CWQ04FNTR 12CWQ04FN.pdf
12CWQ04FNTR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Produkt ist nicht verfügbar
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SMF5V0A-HM3-08 smf5v0atosmf58a.pdf
SMF5V0A-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC SMF
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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SMF5V0A-HM3-08 smf5v0atosmf58a.pdf
SMF5V0A-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC SMF
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
41+0.43 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.19 EUR
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SMF5V0A-M3-18 smf5v0atosmf58a.pdf
SMF5V0A-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
20000+0.12 EUR
Mindestbestellmenge: 10000
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SMF5V0A-M3-18 smf5v0atosmf58a.pdf
SMF5V0A-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 48223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.40 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.14 EUR
2000+0.13 EUR
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SMF5V0A-HE3-08 smf5v0atosmf58a.pdf
SMF5V0A-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
21000+0.13 EUR
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SMF5V0A-HE3-08 smf5v0atosmf58a.pdf
SMF5V0A-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28083 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.38 EUR
100+0.18 EUR
Mindestbestellmenge: 32
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SMF5V0A-E3-18 smf5v0atosmf58a.pdf
SMF5V0A-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC SMF
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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SMF5V0A-E3-18 smf5v0atosmf58a.pdf
SMF5V0A-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC SMF
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1120pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 48865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
35+0.51 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 25
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SB230-E3/54 sb220.pdf
SB230-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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SB230-E3/54 sb220.pdf
SB230-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 2678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
30+0.60 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
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VS-4EGH06-M3/5BT vs-4egh06-m3.pdf
VS-4EGH06-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 3200 Stücke:
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Anzahl Preis
3200+0.41 EUR
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VS-4EGH06-M3/5BT vs-4egh06-m3.pdf
VS-4EGH06-M3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 3601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.88 EUR
100+0.67 EUR
500+0.53 EUR
1000+0.43 EUR
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SE40NJ-M3/I se40nd_se40ng_se40nj.pdf
SE40NJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14000+0.20 EUR
Mindestbestellmenge: 14000
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SE40NJ-M3/I se40nd_se40ng_se40nj.pdf
SE40NJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
27+0.66 EUR
100+0.39 EUR
500+0.37 EUR
1000+0.25 EUR
2000+0.23 EUR
5000+0.22 EUR
Mindestbestellmenge: 21
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SE40NJHM3/I se40nd_se40ng_se40nj.pdf
SE40NJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14000+0.29 EUR
Mindestbestellmenge: 14000
Im Einkaufswagen  Stück im Wert von  UAH
SE40NJHM3/I se40nd_se40ng_se40nj.pdf
SE40NJHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 14300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
26+0.70 EUR
100+0.52 EUR
500+0.41 EUR
1000+0.32 EUR
2000+0.29 EUR
Mindestbestellmenge: 22
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RGP10JE-E3/54 rgp10a.pdf
RGP10JE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5500+0.25 EUR
11000+0.23 EUR
Mindestbestellmenge: 5500
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RGP10JE-E3/54 rgp10a.pdf
RGP10JE-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
29+0.61 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.30 EUR
2000+0.28 EUR
Mindestbestellmenge: 20
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SMAJ100AHM3/I smaj50a.pdf
SMAJ100AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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VS-1N1186RA vs-1n1183series.pdf
VS-1N1186RA
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 200V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 126 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 200 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.98 EUR
10+14.62 EUR
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VS-40HFR10 vs-40hfrseries.pdf
VS-40HFR10
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
Current - Reverse Leakage @ Vr: 9 mA @ 100 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.56 EUR
10+8.02 EUR
Mindestbestellmenge: 2
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VS-85HFR80 vs-85hfrseries.pdf
VS-85HFR80
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 800 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.78 EUR
10+17.44 EUR
100+15.08 EUR
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VS-1N3768 vs-1n1183series.pdf
VS-1N3768
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 110 A
Current - Reverse Leakage @ Vr: 2 mA @ 1000 V
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.21 EUR
10+21.75 EUR
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VS-85HF10 vs-85hfrseries.pdf
VS-85HF10
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 100 V
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.87 EUR
10+17.05 EUR
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VS-40HFR80M vs-40hfrseries.pdf
VS-40HFR80M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 800V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 125 A
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.41 EUR
10+21.02 EUR
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VS-12CDU06HM3/I vs-12cdu06hm3.pdf
VS-12CDU06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-12CDU06HM3/I vs-12cdu06hm3.pdf
VS-12CDU06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
10+1.93 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.15 EUR
Mindestbestellmenge: 7
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SM6S10AHE3_A/I sm6s.pdf
SM6S10AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 4600W (4.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SM5S10AHE3_A/I sm5s.pdf
SM5S10AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ160CAHE3_A/H smbj.pdf
SMBJ160CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160CAHM3/I smbj.pdf
SMBJ160CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMBJ160CA58HE3_A/I smbj.pdf
SMBJ160CA58HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160CAHM3/H smbj.pdf
SMBJ160CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SMBJ160CAHE3_A/I smbj.pdf
SMBJ160CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160CA58HE3/5B smbj.pdf
SMBJ160CA58HE3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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NSB8MTHE3_B/I ns8xt.pdf
NSB8MTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSB8MTHE3_B/P ns8xt.pdf
NSB8MTHE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+2.31 EUR
100+1.80 EUR
500+1.49 EUR
1000+1.22 EUR
Mindestbestellmenge: 7
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SMA6F6.0A-M3/6A sma6f5.pdf
SMA6F6.0A-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 13.7VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.7V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.23 EUR
Mindestbestellmenge: 3500
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SMA6F6.0A-M3/6A sma6f5.pdf
SMA6F6.0A-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 13.7VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.7V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 6492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
31+0.57 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 25
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DZ23C3V3-G3-08 dz23-g_series.pdf
DZ23C3V3-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.08 EUR
Mindestbestellmenge: 3000
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DZ23C3V3-G3-08 dz23-g_series.pdf
DZ23C3V3-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
auf Bestellung 14960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
47+0.37 EUR
111+0.16 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 33
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VS-16EDH02-M3/I vs-16edh02-m3.pdf
VS-16EDH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Produkt ist nicht verfügbar
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VS-16EDH02-M3/I vs-16edh02-m3.pdf
VS-16EDH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 16A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
auf Bestellung 1829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.90 EUR
10+1.91 EUR
100+1.36 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 7
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VS-25FR80 vs-25frseries.pdf
VS-25FR80
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.47 EUR
10+7.38 EUR
100+5.56 EUR
Mindestbestellmenge: 2
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VS-25FR20 vs-25frseries.pdf
VS-25FR20
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.48 EUR
10+5.93 EUR
Mindestbestellmenge: 3
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VS-25FR80M vs-25frseries.pdf
VS-25FR80M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.40 EUR
10+11.82 EUR
100+9.14 EUR
Mindestbestellmenge: 2
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VS-25F80M vs-25frseries.pdf
VS-25F80M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.53 EUR
10+15.03 EUR
100+12.52 EUR
Mindestbestellmenge: 2
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VS-3C10ET07T-M3 vs-3c10et07t-m3.pdf
VS-3C10ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 3047 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.34 EUR
10+7.49 EUR
100+6.13 EUR
500+5.22 EUR
1000+4.58 EUR
Mindestbestellmenge: 3
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VS-3C04ET07T-M3 vs-3c04et07t-m3.pdf
VS-3C04ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
50+3.03 EUR
100+2.49 EUR
500+2.11 EUR
1000+1.79 EUR
Mindestbestellmenge: 5
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VS-3C08ET07T-M3 vs-3c08et07t-m3.pdf
VS-3C08ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
50+3.34 EUR
100+2.86 EUR
500+2.80 EUR
Mindestbestellmenge: 5
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VS-3C16ET07T-M3 vs-3c16et07t-m3.pdf
VS-3C16ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.51 EUR
10+11.31 EUR
100+9.36 EUR
500+8.15 EUR
1000+7.66 EUR
Mindestbestellmenge: 2
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VS-3C12ET07S2L-M3 vs-3c12et07s2l-m.pdf
VS-3C12ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+6.87 EUR
Mindestbestellmenge: 800
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VS-3C12ET07S2L-M3 vs-3c12et07s2l-m.pdf
VS-3C12ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.67 EUR
10+9.57 EUR
100+7.84 EUR
Mindestbestellmenge: 2
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VS-3C06ET07T-M3 vs-3c06et07t-m3.pdf
VS-3C06ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.56 EUR
50+3.61 EUR
100+3.09 EUR
500+2.75 EUR
1000+2.35 EUR
2000+2.22 EUR
Mindestbestellmenge: 4
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VS-3C10ET07S2L-M3 vs-3c10et07s2l-m.pdf
VS-3C10ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.53 EUR
1600+4.85 EUR
Mindestbestellmenge: 800
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VS-3C10ET07S2L-M3 vs-3c10et07s2l-m.pdf
VS-3C10ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.84 EUR
10+7.93 EUR
100+6.50 EUR
Mindestbestellmenge: 2
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VS-3C12ET07T-M3 vs-3c12et07t-m3.pdf
VS-3C12ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.16 EUR
10+9.12 EUR
100+7.47 EUR
500+6.36 EUR
1000+5.58 EUR
Mindestbestellmenge: 2
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VS-3C20ET07T-M3 vs-3c20et07t-m3.pdf
VS-3C20ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.72 EUR
10+15.11 EUR
100+12.51 EUR
500+10.94 EUR
Mindestbestellmenge: 2
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