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15MQ040N 15MQ040N Vishay General Semiconductor - Diodes Division 15MQ040NPbF.pdf description Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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AU3PK-M3/86A AU3PK-M3/86A Vishay General Semiconductor - Diodes Division au3pm.pdf Description: DIODE AVALANCHE 800V 1.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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AU3PK-M3/86A AU3PK-M3/86A Vishay General Semiconductor - Diodes Division au3pm.pdf Description: DIODE AVALANCHE 800V 1.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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BZX84C2V4-HE3_A-18 BZX84C2V4-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 2.4V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5258C-E3-18 MMSZ5258C-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 36V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar
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MMSZ5258C-E3-18 MMSZ5258C-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 36V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
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VTVS5V0GSMF-HM3-08 VTVS5V0GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 5VWM 8.9VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 2095pF @ 1MHz
Current - Peak Pulse (10/1000µs): 43.99A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.57V
Voltage - Clamping (Max) @ Ipp: 8.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VTVS5V0GSMF-HM3-08 VTVS5V0GSMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 5VWM 8.9VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 2095pF @ 1MHz
Current - Peak Pulse (10/1000µs): 43.99A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.57V
Voltage - Clamping (Max) @ Ipp: 8.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX84C2V7-G3-08 BZX84C2V7-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 2.7V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
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BZX84C2V7-G3-08 BZX84C2V7-G3-08 Vishay General Semiconductor - Diodes Division bzx84-g_series.pdf Description: DIODE ZENER 2.7V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
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BYG23MHM3_A/H BYG23MHM3_A/H Vishay General Semiconductor - Diodes Division byg23m.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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BYG23MHM3_A/H BYG23MHM3_A/H Vishay General Semiconductor - Diodes Division byg23m.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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40CPQ100 40CPQ100 Vishay General Semiconductor - Diodes Division 40CPQ80%2C100.pdf Description: DIODE ARR SCHOT 100V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 100 V
Produkt ist nicht verfügbar
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SMF6V0A-HE3-08 SMF6V0A-HE3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 6VWM 10.3VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1063pF @ 1MHz
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMF6V0A-HE3-08 SMF6V0A-HE3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 6VWM 10.3VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1063pF @ 1MHz
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBRB2560CT-M3/I MBRB2560CT-M3/I Vishay General Semiconductor - Diodes Division mbr2560ct.pdf Description: DIODE ARR SCHOTTKY 60V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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SE30NG-M3/I SE30NG-M3/I Vishay General Semiconductor - Diodes Division se30nd_se30ng_se30nj.pdf Description: DIODE STANDARD 400V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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SE30NG-M3/I SE30NG-M3/I Vishay General Semiconductor - Diodes Division se30nd_se30ng_se30nj.pdf Description: DIODE STANDARD 400V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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SE20NGHM3/I SE20NGHM3/I Vishay General Semiconductor - Diodes Division se20nd_se20ng_se20nj.pdf Description: DIODE STANDARD 400V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SE20NGHM3/I SE20NGHM3/I Vishay General Semiconductor - Diodes Division se20nd_se20ng_se20nj.pdf Description: DIODE STANDARD 400V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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SE30NGHM3/I SE30NGHM3/I Vishay General Semiconductor - Diodes Division se30nd_se30ng_se30nj.pdf Description: DIODE STANDARD 400V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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SE30NGHM3/I SE30NGHM3/I Vishay General Semiconductor - Diodes Division se30nd_se30ng_se30nj.pdf Description: DIODE STANDARD 400V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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SE80PWTGHM3/I SE80PWTGHM3/I Vishay General Semiconductor - Diodes Division se80pwtg_se80pwtj.pdf Description: DIODE STD 400V 2.6A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 µs
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
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SE80PWTGHM3/I SE80PWTGHM3/I Vishay General Semiconductor - Diodes Division se80pwtg_se80pwtj.pdf Description: DIODE STD 400V 2.6A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 µs
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
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30CPQ100 30CPQ100 Vishay General Semiconductor - Diodes Division 30CPQ080%2C%20100.pdf description Description: DIODE ARR SCHOT 100V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Produkt ist nicht verfügbar
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30CPQ060 30CPQ060 Vishay General Semiconductor - Diodes Division 30CPQ050%2C%20060.pdf Description: DIODE ARR SCHOTT 60V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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BZG03C13-M3-08 BZG03C13-M3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 13V 1.25W DO214AC
Tolerance: ±6.54%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
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BZG03C13-M3-08 BZG03C13-M3-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 13V 1.25W DO214AC
Tolerance: ±6.54%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
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STPS30L30CT STPS30L30CT Vishay General Semiconductor - Diodes Division en.CD00001329.pdf Description: DIODE ARR SCHOTT 30V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Produkt ist nicht verfügbar
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30BQ015 30BQ015 Vishay General Semiconductor - Diodes Division 30BQ015PBF.pdf Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
Produkt ist nicht verfügbar
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LL4148-13 LL4148-13 Vishay General Semiconductor - Diodes Division LL4148%2CLL4448.pdf Description: DIODE STANDARD 75V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KBU4G-M3/P KBU4G-M3/P Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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KBU4G-M3/A KBU4G-M3/A Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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1.5SMC180AHM3_A/I 1.5SMC180AHM3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 154VWM 246VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC180AHE3_A/I 1.5SMC180AHE3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 154VWM 246VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC180AHM3_A/H 1.5SMC180AHM3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 154VWM 246VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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30CPQ045 30CPQ045 Vishay General Semiconductor - Diodes Division 30CPQ035%2C40%2C45.pdf Description: DIODE ARR SCHOTT 45V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 45 V
Produkt ist nicht verfügbar
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SGL41-60HE3_A/I SGL41-60HE3_A/I Vishay General Semiconductor - Diodes Division bym13.pdf Description: DIODE SCHOTTKY 60V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-30HE3_A/I SGL41-30HE3_A/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-20HE3_A/I SGL41-20HE3_A/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-40HE3_A/I SGL41-40HE3_A/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-40HE3_A/H SGL41-40HE3_A/H Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-50HE3_A/I SGL41-50HE3_A/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-50HE3_A/H SGL41-50HE3_A/H Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-30HE3_A/H SGL41-30HE3_A/H Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-20HE3_A/H SGL41-20HE3_A/H Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 20V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-60HE3_A/H SGL41-60HE3_A/H Vishay General Semiconductor - Diodes Division bym13.pdf Description: DIODE SCHOTTKY 60V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4948GP-E3/73 1N4948GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4942gp.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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V3P6-M3/85A V3P6-M3/85A Vishay General Semiconductor - Diodes Division v3p6.pdf Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
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V3P6-M3/85A V3P6-M3/85A Vishay General Semiconductor - Diodes Division v3p6.pdf Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
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500+0.26 EUR
1000+0.22 EUR
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5000+0.19 EUR
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5KP110AHE3_A/C 5KP110AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE 110VWM 177VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 28.2A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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5KP110AHE3/51 5KP110AHE3/51 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 110VWM 177VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 28.2A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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5KP120AHE3/51 5KP120AHE3/51 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 120VWM 193VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC250AHM3_B/H 1.5SMC250AHM3_B/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 214VWM 344VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC250AHM3_B/H 1.5SMC250AHM3_B/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 214VWM 344VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
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7+2.73 EUR
10+2.06 EUR
100+1.41 EUR
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AZ23C2V7-HE3_A-08 AZ23C2V7-HE3_A-08 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 2.7V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AZ23C33-HE3_A-08 AZ23C33-HE3_A-08 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 33V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AZ23C33-HE3_A-18 AZ23C33-HE3_A-18 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 33V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS1FL4HM3/H SS1FL4HM3/H Vishay General Semiconductor - Diodes Division ss1fl4.pdf Description: DIODE SCHOTTKY 40V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
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SS1FL4HM3/H SS1FL4HM3/H Vishay General Semiconductor - Diodes Division ss1fl4.pdf Description: DIODE SCHOTTKY 40V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 15258 Stücke:
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31+0.58 EUR
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15MQ040N description 15MQ040NPbF.pdf
15MQ040N
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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AU3PK-M3/86A au3pm.pdf
AU3PK-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1500 Stücke:
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1500+0.58 EUR
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AU3PK-M3/86A au3pm.pdf
AU3PK-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 2636 Stücke:
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Anzahl Preis
11+1.72 EUR
15+1.19 EUR
100+0.95 EUR
500+0.75 EUR
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BZX84C2V4-HE3_A-18 bzx84_series.pdf
BZX84C2V4-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5258C-E3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5258C-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar
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MMSZ5258C-E3-18 mmsz5225_to_mmsz5267.pdf
MMSZ5258C-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
auf Bestellung 9885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
90+0.2 EUR
209+0.084 EUR
500+0.08 EUR
1000+0.073 EUR
2000+0.072 EUR
5000+0.071 EUR
Mindestbestellmenge: 59
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VTVS5V0GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS5V0GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 8.9VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 2095pF @ 1MHz
Current - Peak Pulse (10/1000µs): 43.99A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.57V
Voltage - Clamping (Max) @ Ipp: 8.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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Anzahl Preis
3000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 3000
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VTVS5V0GSMF-HM3-08 vtvs3v3asmf.pdf
VTVS5V0GSMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 8.9VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 2095pF @ 1MHz
Current - Peak Pulse (10/1000µs): 43.99A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.57V
Voltage - Clamping (Max) @ Ipp: 8.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 29303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
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BZX84C2V7-G3-08 bzx84-g_series.pdf
BZX84C2V7-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
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BZX84C2V7-G3-08 bzx84-g_series.pdf
BZX84C2V7-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
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BYG23MHM3_A/H byg23m.pdf
BYG23MHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 10800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.21 EUR
5400+0.2 EUR
Mindestbestellmenge: 1800
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BYG23MHM3_A/H byg23m.pdf
BYG23MHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 10800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
30+0.6 EUR
100+0.45 EUR
500+0.34 EUR
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40CPQ100 40CPQ80%2C100.pdf
40CPQ100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 100 V
Produkt ist nicht verfügbar
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SMF6V0A-HE3-08 smf5v0atosmf58a.pdf
SMF6V0A-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1063pF @ 1MHz
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
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SMF6V0A-HE3-08 smf5v0atosmf58a.pdf
SMF6V0A-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 1063pF @ 1MHz
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.38 EUR
100+0.19 EUR
500+0.18 EUR
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MBRB2560CT-M3/I mbr2560ct.pdf
MBRB2560CT-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 60V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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SE30NG-M3/I se30nd_se30ng_se30nj.pdf
SE30NG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14000+0.17 EUR
Mindestbestellmenge: 14000
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SE30NG-M3/I se30nd_se30ng_se30nj.pdf
SE30NG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 14300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
36+0.5 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.24 EUR
5000+0.21 EUR
Mindestbestellmenge: 24
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SE20NGHM3/I se20nd_se20ng_se20nj.pdf
SE20NGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14000+0.18 EUR
Mindestbestellmenge: 14000
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SE20NGHM3/I se20nd_se20ng_se20nj.pdf
SE20NGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 14300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
36+0.5 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.24 EUR
2000+0.22 EUR
5000+0.2 EUR
Mindestbestellmenge: 24
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SE30NGHM3/I se30nd_se30ng_se30nj.pdf
SE30NGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14000+0.21 EUR
Mindestbestellmenge: 14000
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SE30NGHM3/I se30nd_se30ng_se30nj.pdf
SE30NGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 14300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
31+0.58 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.28 EUR
5000+0.25 EUR
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SE80PWTGHM3/I se80pwtg_se80pwtj.pdf
SE80PWTGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 2.6A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 µs
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4500+0.5 EUR
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SE80PWTGHM3/I se80pwtg_se80pwtj.pdf
SE80PWTGHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 2.6A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.4 µs
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
16+1.15 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.62 EUR
2000+0.57 EUR
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30CPQ100 description 30CPQ080%2C%20100.pdf
30CPQ100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Produkt ist nicht verfügbar
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30CPQ060 30CPQ050%2C%20060.pdf
30CPQ060
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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BZG03C13-M3-08 bzg03c-m-series.pdf
BZG03C13-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 1.25W DO214AC
Tolerance: ±6.54%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.32 EUR
3000+0.29 EUR
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BZG03C13-M3-08 bzg03c-m-series.pdf
BZG03C13-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 1.25W DO214AC
Tolerance: ±6.54%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 3908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
30+0.59 EUR
100+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 22
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STPS30L30CT en.CD00001329.pdf
STPS30L30CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Produkt ist nicht verfügbar
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30BQ015 30BQ015PBF.pdf
30BQ015
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
Produkt ist nicht verfügbar
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LL4148-13 LL4148%2CLL4448.pdf
LL4148-13
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KBU4G-M3/P
KBU4G-M3/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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KBU4G-M3/A
KBU4G-M3/A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 4A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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1.5SMC180AHM3_A/I 15smc.pdf
1.5SMC180AHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC180AHE3_A/I 15smc.pdf
1.5SMC180AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC180AHM3_A/H 15smc.pdf
1.5SMC180AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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30CPQ045 30CPQ035%2C40%2C45.pdf
30CPQ045
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 45 V
Produkt ist nicht verfügbar
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SGL41-60HE3_A/I bym13.pdf
SGL41-60HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-30HE3_A/I
SGL41-30HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-20HE3_A/I
SGL41-20HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-40HE3_A/I
SGL41-40HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-40HE3_A/H
SGL41-40HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-50HE3_A/I
SGL41-50HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-50HE3_A/H
SGL41-50HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-30HE3_A/H
SGL41-30HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-20HE3_A/H
SGL41-20HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SGL41-60HE3_A/H bym13.pdf
SGL41-60HE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4948GP-E3/73 1n4942gp.pdf
1N4948GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
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V3P6-M3/85A v3p6.pdf
V3P6-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.15 EUR
Mindestbestellmenge: 10000
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V3P6-M3/85A v3p6.pdf
V3P6-M3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
33+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.22 EUR
2000+0.21 EUR
5000+0.19 EUR
Mindestbestellmenge: 26
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5KP110AHE3_A/C 5kp8_5a.pdf
5KP110AHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 177VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 28.2A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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5KP110AHE3/51
5KP110AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 177VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 28.2A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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5KP120AHE3/51
5KP120AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 193VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5SMC250AHM3_B/H 15smc.pdf
1.5SMC250AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+1.02 EUR
1700+0.85 EUR
Mindestbestellmenge: 850
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1.5SMC250AHM3_B/H 15smc.pdf
1.5SMC250AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.06 EUR
100+1.41 EUR
Mindestbestellmenge: 7
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AZ23C2V7-HE3_A-08 az23_series.pdf
AZ23C2V7-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 2.7V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AZ23C33-HE3_A-08 az23_series.pdf
AZ23C33-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 33V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AZ23C33-HE3_A-18 az23_series.pdf
AZ23C33-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 33V SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS1FL4HM3/H ss1fl4.pdf
SS1FL4HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
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SS1FL4HM3/H ss1fl4.pdf
SS1FL4HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 15258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
45+0.4 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 31
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