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VTVS63ASMF-HM3-08 VTVS63ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 63VWM 108VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 227pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.54A
Voltage - Reverse Standoff (Typ): 63V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70.8V
Voltage - Clamping (Max) @ Ipp: 108V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
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6000+0.19 EUR
9000+0.18 EUR
15000+0.17 EUR
21000+0.16 EUR
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VTVS63ASMF-HM3-08 VTVS63ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 63VWM 108VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 227pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.54A
Voltage - Reverse Standoff (Typ): 63V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70.8V
Voltage - Clamping (Max) @ Ipp: 108V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26190 Stücke:
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500+0.29 EUR
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LL4448-7 LL4448-7 Vishay General Semiconductor - Diodes Division LL4148%2CLL4448.pdf Description: DIODE STANDARD 75V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
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V8P12HM3_A/H V8P12HM3_A/H Vishay General Semiconductor - Diodes Division v8p12.pdf Description: DIODE SCHOTTKY 120V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
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V8P12HM3_A/H V8P12HM3_A/H Vishay General Semiconductor - Diodes Division v8p12.pdf Description: DIODE SCHOTTKY 120V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
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SM5S24AHM3/I SM5S24AHM3/I Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 24VWM 38.9VC DO218AC
Packaging: Cut Tape (CT)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SS32HE3_B/I SS32HE3_B/I Vishay General Semiconductor - Diodes Division ss32.pdf Description: DIODE SCHOTTKY 20V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
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SS32HE3_B/H SS32HE3_B/H Vishay General Semiconductor - Diodes Division ss32.pdf Description: DIODE SCHOTTKY 20V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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63CPQ100 63CPQ100 Vishay General Semiconductor - Diodes Division 63CPQ100.pdf Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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BZX384B20-HE3-08 BZX384B20-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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BZX384B20-HE3-08 BZX384B20-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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91+0.2 EUR
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S1PJHM3/85A S1PJHM3/85A Vishay General Semiconductor - Diodes Division s1pb.pdf Description: DIODE STANDARD 600V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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S1PJHM3/85A S1PJHM3/85A Vishay General Semiconductor - Diodes Division s1pb.pdf Description: DIODE STANDARD 600V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS20-E3-08 BAS20-E3-08 Vishay General Semiconductor - Diodes Division bas19.pdf Description: DIODE STANDARD 150V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
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BAS20-E3-08 BAS20-E3-08 Vishay General Semiconductor - Diodes Division bas19.pdf Description: DIODE STANDARD 150V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 15000 Stücke:
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1N4151WS-HE3-08 1N4151WS-HE3-08 Vishay General Semiconductor - Diodes Division 1n4151ws.pdf Description: DIODE STANDARD 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
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1N4151WS-HE3-08 1N4151WS-HE3-08 Vishay General Semiconductor - Diodes Division 1n4151ws.pdf Description: DIODE STANDARD 50V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
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1N4151WS-G3-08 1N4151WS-G3-08 Vishay General Semiconductor - Diodes Division 1n4151wsg.pdf Description: DIODE STANDARD 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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1N4151WS-G3-08 1N4151WS-G3-08 Vishay General Semiconductor - Diodes Division 1n4151wsg.pdf Description: DIODE STANDARD 50V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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TPSMB12A-1BHE3/5BT TPSMB12A-1BHE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 10.2VWM 16.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPSMB12HE3/5BT TPSMB12HE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 9.72VWM 17.3V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 9.72V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.8V
Voltage - Clamping (Max) @ Ipp: 17.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPSMB12HE3/52T TPSMB12HE3/52T Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 9.72VWM 17.3V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 9.72V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.8V
Voltage - Clamping (Max) @ Ipp: 17.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZX12C-TR TZX12C-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
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TZX12C-TR TZX12C-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
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TZX12A-TR TZX12A-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
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TZX12A-TR TZX12A-TR Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
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TZX12C-TAP TZX12C-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
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TZX12C-TAP TZX12C-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
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1N6273AHE3/51 1N6273AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 10.2VWM 16.7VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-16CTQ060STRL-M3 VS-16CTQ060STRL-M3 Vishay General Semiconductor - Diodes Division vs-16ctqs-m3series.pdf Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Qualification: AEC-Q101
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VS-16CTQ060STRL-M3 VS-16CTQ060STRL-M3 Vishay General Semiconductor - Diodes Division vs-16ctqs-m3series.pdf Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Qualification: AEC-Q101
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30CTQ060-1 30CTQ060-1 Vishay General Semiconductor - Diodes Division 30CTQyyy%20Series.pdf Description: DIODE ARR SCHOTT 60V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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30CTQ060S 30CTQ060S Vishay General Semiconductor - Diodes Division 30CTQyyy%20Series.pdf description Description: DIODE ARR SCHOTT 60V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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BZX384C20-HE3-08 BZX384C20-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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BZX384C20-HE3-08 BZX384C20-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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BZX384C20-G3-08 BZX384C20-G3-08 Vishay General Semiconductor - Diodes Division PdfFile_246575.pdf Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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BZX384C20-G3-08 BZX384C20-G3-08 Vishay General Semiconductor - Diodes Division PdfFile_246575.pdf Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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12CWQ10FN 12CWQ10FN Vishay General Semiconductor - Diodes Division 12CWQ10FN.pdf Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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VS-MBRD650CTTRL-M3 VS-MBRD650CTTRL-M3 Vishay General Semiconductor - Diodes Division vs-mbrd650c.pdf Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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VS-MBRD650CTTRL-M3 VS-MBRD650CTTRL-M3 Vishay General Semiconductor - Diodes Division vs-mbrd650c.pdf Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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SA6.0CA-E3/54 SA6.0CA-E3/54 Vishay General Semiconductor - Diodes Division sa5a.pdf Description: TVS DIODE 6VWM 10.3VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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MBRD660CT MBRD660CT Vishay General Semiconductor - Diodes Division MBRD650CT%2C660CT.pdf Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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SM5S36AHM3/I SM5S36AHM3/I Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM5S36AHM3/I SM5S36AHM3/I Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Cut Tape (CT)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1N4733A-T 1N4733A-T Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 5.1V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 550 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-3C04EV07T-M3/I VS-3C04EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c04ev07t-m3.pdf Description: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C04EV07T-M3/I VS-3C04EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c04ev07t-m3.pdf Description: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
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VS-3C06EV07T-M3/I VS-3C06EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c06ev07t-m3.pdf Description: DIODE SIL CARB 650V 6A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 47 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C06EV07T-M3/I VS-3C06EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c06ev07t-m3.pdf Description: DIODE SIL CARB 650V 6A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 47 µA @ 650 V
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VS-3C10EV07T-M3/I VS-3C10EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c10ev07t-m3.pdf Description: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C10EV07T-M3/I VS-3C10EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c10ev07t-m3.pdf Description: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
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KBU6K-M3/A KBU6K-M3/A Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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S5BG-E3/I S5BG-E3/I Vishay General Semiconductor - Diodes Division doc?98677 Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S5BG-E3/I S5BG-E3/I Vishay General Semiconductor - Diodes Division doc?98677 Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
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100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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S3BG-E3/I S3BG-E3/I Vishay General Semiconductor - Diodes Division doc?98676 Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
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S3BG-E3/I S3BG-E3/I Vishay General Semiconductor - Diodes Division doc?98676 Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
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25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
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30BQ100 30BQ100 Vishay General Semiconductor - Diodes Division 30BQ100PBF.pdf description Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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TZM5241C-GS08 TZM5241C-GS08 Vishay General Semiconductor - Diodes Division tzq5221b.pdf Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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TZM5241C-GS18 TZM5241C-GS18 Vishay General Semiconductor - Diodes Division tzq5221b.pdf Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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ZMM5241B-13 Vishay General Semiconductor - Diodes Division ZMM5221B%20thru%20ZMM5267B.pdf Description: DIODE ZENER 11V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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VTVS63ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS63ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 63VWM 108VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 227pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.54A
Voltage - Reverse Standoff (Typ): 63V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70.8V
Voltage - Clamping (Max) @ Ipp: 108V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
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Anzahl Preis
3000+0.2 EUR
6000+0.19 EUR
9000+0.18 EUR
15000+0.17 EUR
21000+0.16 EUR
Mindestbestellmenge: 3000
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VTVS63ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS63ASMF-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 63VWM 108VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 227pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.54A
Voltage - Reverse Standoff (Typ): 63V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70.8V
Voltage - Clamping (Max) @ Ipp: 108V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26190 Stücke:
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Anzahl Preis
27+0.67 EUR
34+0.53 EUR
100+0.32 EUR
500+0.29 EUR
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LL4448-7 LL4148%2CLL4448.pdf
LL4448-7
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8P12HM3_A/H v8p12.pdf
V8P12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
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Anzahl Preis
1500+0.41 EUR
3000+0.4 EUR
4500+0.38 EUR
Mindestbestellmenge: 1500
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V8P12HM3_A/H v8p12.pdf
V8P12HM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 5974 Stücke:
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Anzahl Preis
16+1.14 EUR
19+0.94 EUR
100+0.69 EUR
500+0.54 EUR
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SM5S24AHM3/I sm5s.pdf
SM5S24AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO218AC
Packaging: Cut Tape (CT)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1485 Stücke:
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Anzahl Preis
4+5.21 EUR
10+3.4 EUR
100+2.37 EUR
Mindestbestellmenge: 4
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SS32HE3_B/I ss32.pdf
SS32HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS32HE3_B/H ss32.pdf
SS32HE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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63CPQ100 63CPQ100.pdf
63CPQ100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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BZX384B20-HE3-08 bzx384.pdf
BZX384B20-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B20-HE3-08 bzx384.pdf
BZX384B20-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
auf Bestellung 14800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.2 EUR
106+0.17 EUR
500+0.11 EUR
1000+0.085 EUR
Mindestbestellmenge: 56
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S1PJHM3/85A s1pb.pdf
S1PJHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1PJHM3/85A s1pb.pdf
S1PJHM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS20-E3-08 bas19.pdf
BAS20-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar
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BAS20-E3-08 bas19.pdf
BAS20-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
82+0.21 EUR
147+0.12 EUR
500+0.091 EUR
1000+0.072 EUR
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1N4151WS-HE3-08 1n4151ws.pdf
1N4151WS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.066 EUR
6000+0.059 EUR
9000+0.056 EUR
15000+0.049 EUR
Mindestbestellmenge: 3000
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1N4151WS-HE3-08 1n4151ws.pdf
1N4151WS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
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1N4151WS-G3-08 1n4151wsg.pdf
1N4151WS-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.074 EUR
6000+0.066 EUR
9000+0.062 EUR
15000+0.057 EUR
Mindestbestellmenge: 3000
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1N4151WS-G3-08 1n4151wsg.pdf
1N4151WS-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
99+0.18 EUR
129+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
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TPSMB12A-1BHE3/5BT tpsmb.pdf
TPSMB12A-1BHE3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPSMB12HE3/5BT tpsmb.pdf
TPSMB12HE3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.72VWM 17.3V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 9.72V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.8V
Voltage - Clamping (Max) @ Ipp: 17.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TPSMB12HE3/52T tpsmb.pdf
TPSMB12HE3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.72VWM 17.3V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 9.72V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.8V
Voltage - Clamping (Max) @ Ipp: 17.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZX12C-TR tzxserie.pdf
TZX12C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZX12C-TR tzxserie.pdf
TZX12C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
auf Bestellung 25412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
125+0.14 EUR
292+0.06 EUR
500+0.056 EUR
1000+0.047 EUR
2000+0.045 EUR
5000+0.042 EUR
Mindestbestellmenge: 100
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TZX12A-TR tzxserie.pdf
TZX12A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.041 EUR
Mindestbestellmenge: 10000
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TZX12A-TR tzxserie.pdf
TZX12A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
auf Bestellung 29167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
129+0.14 EUR
402+0.044 EUR
500+0.041 EUR
1000+0.04 EUR
Mindestbestellmenge: 84
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TZX12C-TAP tzxserie.pdf
TZX12C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
86+0.21 EUR
154+0.11 EUR
500+0.086 EUR
1000+0.053 EUR
2000+0.052 EUR
Mindestbestellmenge: 53
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TZX12C-TAP tzxserie.pdf
TZX12C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.5 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.05 EUR
20000+0.046 EUR
Mindestbestellmenge: 10000
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1N6273AHE3/51 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf
1N6273AHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-16CTQ060STRL-M3 vs-16ctqs-m3series.pdf
VS-16CTQ060STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.29 EUR
1600+1.19 EUR
2400+1.14 EUR
4000+1.1 EUR
Mindestbestellmenge: 800
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VS-16CTQ060STRL-M3 vs-16ctqs-m3series.pdf
VS-16CTQ060STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.22 EUR
100+1.7 EUR
Mindestbestellmenge: 6
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30CTQ060-1 30CTQyyy%20Series.pdf
30CTQ060-1
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO2623
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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30CTQ060S description 30CTQyyy%20Series.pdf
30CTQ060S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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BZX384C20-HE3-08
BZX384C20-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.066 EUR
6000+0.059 EUR
9000+0.056 EUR
15000+0.042 EUR
Mindestbestellmenge: 3000
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BZX384C20-HE3-08
BZX384C20-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
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BZX384C20-G3-08 PdfFile_246575.pdf
BZX384C20-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.073 EUR
6000+0.066 EUR
9000+0.062 EUR
15000+0.054 EUR
Mindestbestellmenge: 3000
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BZX384C20-G3-08 PdfFile_246575.pdf
BZX384C20-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 200MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
65+0.27 EUR
100+0.18 EUR
500+0.11 EUR
1000+0.084 EUR
Mindestbestellmenge: 48
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12CWQ10FN 12CWQ10FN.pdf
12CWQ10FN
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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VS-MBRD650CTTRL-M3 vs-mbrd650c.pdf
VS-MBRD650CTTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
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VS-MBRD650CTTRL-M3 vs-mbrd650c.pdf
VS-MBRD650CTTRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
16+1.15 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.53 EUR
Mindestbestellmenge: 12
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SA6.0CA-E3/54 sa5a.pdf
SA6.0CA-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.24 EUR
Mindestbestellmenge: 4000
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MBRD660CT MBRD650CT%2C660CT.pdf
MBRD660CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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SM5S36AHM3/I sm5s.pdf
SM5S36AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+1.84 EUR
1500+1.79 EUR
Mindestbestellmenge: 750
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SM5S36AHM3/I sm5s.pdf
SM5S36AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO218AC
Packaging: Cut Tape (CT)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.4 EUR
100+2.58 EUR
Mindestbestellmenge: 4
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1N4733A-T 1n4728a.pdf
1N4733A-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 550 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-3C04EV07T-M3/I vs-3c04ev07t-m3.pdf
VS-3C04EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C04EV07T-M3/I vs-3c04ev07t-m3.pdf
VS-3C04EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 4A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 4120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.49 EUR
100+1.88 EUR
500+1.57 EUR
Mindestbestellmenge: 6
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VS-3C06EV07T-M3/I vs-3c06ev07t-m3.pdf
VS-3C06EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 6A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 47 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C06EV07T-M3/I vs-3c06ev07t-m3.pdf
VS-3C06EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 6A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 47 µA @ 650 V
auf Bestellung 4332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
10+3.3 EUR
100+2.44 EUR
500+2.09 EUR
Mindestbestellmenge: 5
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VS-3C10EV07T-M3/I vs-3c10ev07t-m3.pdf
VS-3C10EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
Produkt ist nicht verfügbar
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VS-3C10EV07T-M3/I vs-3c10ev07t-m3.pdf
VS-3C10EV07T-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 4392 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+4.61 EUR
100+3.5 EUR
500+3.16 EUR
Mindestbestellmenge: 3
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KBU6K-M3/A
KBU6K-M3/A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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S5BG-E3/I doc?98677
S5BG-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3200+0.15 EUR
Mindestbestellmenge: 3200
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S5BG-E3/I doc?98677
S5BG-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 5A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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S3BG-E3/I doc?98676
S3BG-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3200+0.15 EUR
Mindestbestellmenge: 3200
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S3BG-E3/I doc?98676
S3BG-E3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, STANDARD RECOVERY, 3A
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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30BQ100 description 30BQ100PBF.pdf
30BQ100
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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TZM5241C-GS08 tzq5221b.pdf
TZM5241C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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TZM5241C-GS18 tzq5221b.pdf
TZM5241C-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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ZMM5241B-13 ZMM5221B%20thru%20ZMM5267B.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Produkt ist nicht verfügbar
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