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MAL215031102E3 MAL215031102E3 VISHAY 150rmi.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
33+2.23 EUR
35+2.04 EUR
38+1.92 EUR
50+1.83 EUR
100+1.77 EUR
Mindestbestellmenge: 23 Stücke
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ZRC00JG1021H00L ZRC00JG1021H00L VISHAY ZRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Produkt ist nicht verfügbar
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SI7852DP-T1-GE3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SS26-E3/52T SS26-E3/52T VISHAY SS24-E3-52T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Case: SMB
auf Bestellung 3946 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
201+0.36 EUR
315+0.23 EUR
368+0.19 EUR
414+0.17 EUR
500+0.15 EUR
1500+0.14 EUR
Mindestbestellmenge: 143 Stücke
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SS26HE3_A/H SS26HE3_A/H VISHAY ss22.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Application: automotive industry
Case: SMB
auf Bestellung 584 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
178+0.4 EUR
205+0.35 EUR
252+0.28 EUR
Mindestbestellmenge: 136 Stücke
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SS26S-E3/5AT SS26S-E3/5AT VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Case: SMA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
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SS26S-E3/61T SS26S-E3/61T VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Case: SMA
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
252+0.28 EUR
302+0.24 EUR
345+0.21 EUR
368+0.19 EUR
Mindestbestellmenge: 186 Stücke
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SISS26DN-T1-GE3 VISHAY siss26dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 7.8mΩ
Gate-source voltage: ±20V
Power dissipation: 36W
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SISS26LDN-T1-GE3 VISHAY siss26ldn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Power dissipation: 36W
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSSS2600 TSSS2600 VISHAY TSSS2600.pdf Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 4305 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
161+0.44 EUR
179+0.4 EUR
193+0.37 EUR
205+0.35 EUR
500+0.3 EUR
1000+0.29 EUR
Mindestbestellmenge: 117 Stücke
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IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.99 EUR
39+1.84 EUR
50+1.63 EUR
100+1.52 EUR
Mindestbestellmenge: 24 Stücke
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IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.06 EUR
30+2.43 EUR
34+2.16 EUR
50+1.66 EUR
100+1.52 EUR
250+1.4 EUR
500+1.32 EUR
Mindestbestellmenge: 24 Stücke
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IRF840ASTRLPBF IRF840ASTRLPBF VISHAY irf840as_IRF840al.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
31+2.37 EUR
37+1.94 EUR
50+1.63 EUR
100+1.39 EUR
250+1.17 EUR
500+1.07 EUR
Mindestbestellmenge: 25 Stücke
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IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
57+1.27 EUR
64+1.13 EUR
100+1.1 EUR
250+1.04 EUR
500+1 EUR
Mindestbestellmenge: 37 Stücke
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IRF840STRLPBF IRF840STRLPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-05-E3-08 BAS40-05-E3-08 VISHAY BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
562+0.13 EUR
985+0.073 EUR
1356+0.053 EUR
1511+0.047 EUR
Mindestbestellmenge: 385 Stücke
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1.5KE27CA-E3/54 1.5KE27CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1169 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
204+0.35 EUR
500+0.31 EUR
Mindestbestellmenge: 186 Stücke
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1N5822-E3/54 1N5822-E3/54 VISHAY 1n5820-22.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
auf Bestellung 3509 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
246+0.29 EUR
268+0.27 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 200 Stücke
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BYV26C-TAP BYV26C-TAP VISHAY byv26.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
auf Bestellung 7732 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
122+0.59 EUR
152+0.47 EUR
200+0.43 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
2500+0.3 EUR
Mindestbestellmenge: 105 Stücke
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BYV26C-TR BYV26C-TR VISHAY byv26.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Quantity in set/package: 5000pcs.
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
135+0.53 EUR
Mindestbestellmenge: 135 Stücke
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1.5KE400A-E3/54 1.5KE400A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
118+0.61 EUR
Mindestbestellmenge: 91 Stücke
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IRF740APBF IRF740APBF VISHAY IRF740APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.75 EUR
47+1.53 EUR
53+1.36 EUR
100+1.24 EUR
250+1.12 EUR
500+1.1 EUR
Mindestbestellmenge: 27 Stücke
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IRF740ASPBF IRF740ASPBF VISHAY IRF740A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.2 EUR
30+2.42 EUR
35+2.04 EUR
44+1.64 EUR
50+1.46 EUR
100+1.32 EUR
250+1.23 EUR
1000+1.16 EUR
Mindestbestellmenge: 23 Stücke
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IRF740LCPBF IRF740LCPBF VISHAY IRF740LC.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.09 EUR
35+2.1 EUR
42+1.72 EUR
50+1.52 EUR
100+1.34 EUR
250+1.2 EUR
Mindestbestellmenge: 18 Stücke
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IRF740PBF IRF740PBF VISHAY IRF740PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2411 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
46+1.56 EUR
54+1.34 EUR
55+1.32 EUR
100+1.2 EUR
250+1.07 EUR
500+1 EUR
1000+0.92 EUR
2000+0.86 EUR
Mindestbestellmenge: 31 Stücke
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IRF740SPBF IRF740SPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
27+2.67 EUR
32+2.26 EUR
50+1.99 EUR
100+1.8 EUR
150+1.7 EUR
250+1.6 EUR
500+1.5 EUR
Mindestbestellmenge: 19 Stücke
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IRF740STRLPBF IRF740STRLPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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1.5KE18CA-E3/54 1.5KE18CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1481 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
87+0.83 EUR
105+0.68 EUR
139+0.52 EUR
163+0.44 EUR
174+0.41 EUR
Mindestbestellmenge: 69 Stücke
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1.5KE180CA-E3/54 1.5KE180CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
99+0.73 EUR
143+0.5 EUR
500+0.42 EUR
1000+0.39 EUR
1400+0.37 EUR
Mindestbestellmenge: 81 Stücke
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1.5KE18A-E3/54 1.5KE18A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
134+0.54 EUR
142+0.51 EUR
147+0.49 EUR
250+0.47 EUR
500+0.45 EUR
1400+0.42 EUR
Mindestbestellmenge: 120 Stücke
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P6KE200A-E3/54 P6KE200A-E3/54 VISHAY p6ke.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 200V
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Kind of package: 13 inch reel
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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1N5817-E3/54 1N5817-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3010 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
253+0.28 EUR
281+0.25 EUR
400+0.18 EUR
486+0.15 EUR
556+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 218 Stücke
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1N5817-E3/73 1N5817-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7199 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
358+0.2 EUR
447+0.16 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 250 Stücke
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1N5819-E3/54 1N5819-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3221 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
230+0.31 EUR
266+0.27 EUR
417+0.17 EUR
556+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5819-E3/73 1N5819-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 1467 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
323+0.22 EUR
468+0.15 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 239 Stücke
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BAV99-E3-08BAV99-E3-08
BAV99-E3-08BAV99-E3-08
 BAV99-E3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 6609 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
625+0.11 EUR
1112+0.064 EUR
1511+0.047 EUR
1749+0.041 EUR
3000+0.034 EUR
6000+0.031 EUR
Mindestbestellmenge: 334 Stücke
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BAV99-HE3-08 BAV99-HE3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
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1N4007GP-E3/54 1N4007GP-E3/54 VISHAY 1n4001gp.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 6325 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
249+0.29 EUR
275+0.26 EUR
327+0.22 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 209 Stücke
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357B0102MXB251S22 357B0102MXB251S22 VISHAY 357.pdf Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Mechanical durability: 10000000 cycles
Shaft surface: smooth
Potentiometer features: without limiters
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Linearity tolerance: ±2%
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
2+43.44 EUR
3+37.88 EUR
10+34.53 EUR
25+32.76 EUR
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357B2102MAB251S22 357B2102MAB251S22 VISHAY 357.pdf Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Manufacturer series: 357
Mechanical durability: 10000000 cycles
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
2+41.2 EUR
3+36.35 EUR
10+35.65 EUR
Mindestbestellmenge: 2 Stücke
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VJ1206A100KXAAC VJ1206A100KXAAC VISHAY vjcommercialseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 10pF
Tolerance: ±10%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 1930 Stücke:
Lieferzeit 14-21 Tag (e)
510+0.14 EUR
590+0.12 EUR
710+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 510 Stücke
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BAS85-GS08 BAS85-GS08 VISHAY bas85.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 0.2A
Case: MiniMELF; SOD80
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Max. load current: 0.3A
Features of semiconductor devices: small signal
Type of diode: Schottky switching
Mounting: SMD
Capacitance: 10pF
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
auf Bestellung 102474 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
345+0.21 EUR
627+0.11 EUR
944+0.076 EUR
1049+0.068 EUR
2500+0.061 EUR
5000+0.057 EUR
7500+0.055 EUR
12500+0.053 EUR
Mindestbestellmenge: 250 Stücke
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BAS85-GS18 BAS85-GS18 VISHAY bas85.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
auf Bestellung 14820 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
770+0.093 EUR
979+0.073 EUR
1208+0.059 EUR
1330+0.054 EUR
2500+0.051 EUR
5000+0.047 EUR
10000+0.041 EUR
Mindestbestellmenge: 500 Stücke
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NTCLE100E3472JB0 NTCLE100E3472JB0 VISHAY ntcle100.pdf Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
auf Bestellung 3816 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
173+0.41 EUR
188+0.38 EUR
212+0.34 EUR
233+0.31 EUR
253+0.28 EUR
269+0.27 EUR
Mindestbestellmenge: 152 Stücke
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1.5KE47CA-E3/54 1.5KE47CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
118+0.61 EUR
133+0.54 EUR
136+0.53 EUR
Mindestbestellmenge: 93 Stücke
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SIHA25N50E-GE3 VISHAY siha25n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHB25N50E-GE3 VISHAY sihb25n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG25N50E-GE3 VISHAY sihg25n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP25N50E-GE3 VISHAY tf-sihp25n50e-ge3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR10100-E3/4W MBR10100-E3/4W VISHAY MBR10100-E3-4W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
94+0.76 EUR
Mindestbestellmenge: 90 Stücke
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BZX85C12-TAP BZX85C12-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 3705 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
511+0.14 EUR
650+0.11 EUR
893+0.08 EUR
944+0.076 EUR
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BZX85C5V1-TAP BZX85C5V1-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 10279 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
491+0.15 EUR
556+0.13 EUR
633+0.11 EUR
803+0.089 EUR
1000+0.081 EUR
2500+0.073 EUR
5000+0.069 EUR
10000+0.068 EUR
Mindestbestellmenge: 193 Stücke
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IRF540PBF IRF540PBF VISHAY IRF540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540SPBF IRF540SPBF VISHAY irf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLLR4400 TLLR4400 VISHAY TLLx440x-DTE.pdf Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 0.63...1.2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 50°
auf Bestellung 2016 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
174+0.41 EUR
204+0.35 EUR
261+0.27 EUR
311+0.23 EUR
360+0.2 EUR
410+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 143 Stücke
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TLLR4400-AS12Z TLLR4400-AS12Z VISHAY TLLR4400-AS12Z.pdf Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 0.63...1.2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 25°
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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TLLR4401 TLLR4401 VISHAY TLLx440x-DTE.pdf Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 1...2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 50°
auf Bestellung 4002 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
213+0.34 EUR
239+0.3 EUR
261+0.27 EUR
285+0.25 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 167 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C8V2-TAP BZX55C8V2-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 1574 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.086 EUR
1352+0.053 EUR
1574+0.046 EUR
Mindestbestellmenge: 834 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MAL215031102E3 150rmi.pdf
MAL215031102E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
23+3.12 EUR
33+2.23 EUR
35+2.04 EUR
38+1.92 EUR
50+1.83 EUR
100+1.77 EUR
Mindestbestellmenge: 23 Stücke
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ZRC00JG1021H00L ZRC.pdf
ZRC00JG1021H00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI7852DP-T1-GE3 si7852dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SS26-E3/52T SS24-E3-52T.pdf
SS26-E3/52T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Case: SMB
auf Bestellung 3946 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
143+0.5 EUR
201+0.36 EUR
315+0.23 EUR
368+0.19 EUR
414+0.17 EUR
500+0.15 EUR
1500+0.14 EUR
Mindestbestellmenge: 143 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS26HE3_A/H ss22.pdf
SS26HE3_A/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Application: automotive industry
Case: SMB
auf Bestellung 584 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
136+0.53 EUR
178+0.4 EUR
205+0.35 EUR
252+0.28 EUR
Mindestbestellmenge: 136 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS26S-E3/5AT ss26s.pdf
SS26S-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Case: SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SS26S-E3/61T ss26s.pdf
SS26S-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Case: SMA
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
186+0.39 EUR
252+0.28 EUR
302+0.24 EUR
345+0.21 EUR
368+0.19 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SISS26DN-T1-GE3 siss26dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 7.8mΩ
Gate-source voltage: ±20V
Power dissipation: 36W
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SISS26LDN-T1-GE3 siss26ldn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Power dissipation: 36W
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSSS2600 TSSS2600.pdf
TSSS2600
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 4305 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
117+0.61 EUR
161+0.44 EUR
179+0.4 EUR
193+0.37 EUR
205+0.35 EUR
500+0.3 EUR
1000+0.29 EUR
Mindestbestellmenge: 117 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
24+2.99 EUR
39+1.84 EUR
50+1.63 EUR
100+1.52 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
24+3.06 EUR
30+2.43 EUR
34+2.16 EUR
50+1.66 EUR
100+1.52 EUR
250+1.4 EUR
500+1.32 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF840ASTRLPBF irf840as_IRF840al.pdf
IRF840ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
25+2.89 EUR
31+2.37 EUR
37+1.94 EUR
50+1.63 EUR
100+1.39 EUR
250+1.17 EUR
500+1.07 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
37+1.96 EUR
57+1.27 EUR
64+1.13 EUR
100+1.1 EUR
250+1.04 EUR
500+1 EUR
Mindestbestellmenge: 37 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF840STRLPBF IRF840SPBF.pdf
IRF840STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-05-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-05-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
385+0.19 EUR
562+0.13 EUR
985+0.073 EUR
1356+0.053 EUR
1511+0.047 EUR
Mindestbestellmenge: 385 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE27CA-E3/54 15ke_Ser.pdf
1.5KE27CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 1169 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
186+0.39 EUR
204+0.35 EUR
500+0.31 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5822-E3/54 1n5820-22.pdf
1N5822-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
auf Bestellung 3509 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
200+0.36 EUR
246+0.29 EUR
268+0.27 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
auf Bestellung 7732 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
105+0.69 EUR
122+0.59 EUR
152+0.47 EUR
200+0.43 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
2500+0.3 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TR description byv26.pdf
BYV26C-TR
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Quantity in set/package: 5000pcs.
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
135+0.53 EUR
Mindestbestellmenge: 135 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE400A-E3/54 15ke_Ser.pdf
1.5KE400A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
91+0.79 EUR
118+0.61 EUR
Mindestbestellmenge: 91 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF740APBF IRF740APBF.pdf
IRF740APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
27+2.75 EUR
47+1.53 EUR
53+1.36 EUR
100+1.24 EUR
250+1.12 EUR
500+1.1 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF740ASPBF IRF740A.pdf
IRF740ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
23+3.2 EUR
30+2.42 EUR
35+2.04 EUR
44+1.64 EUR
50+1.46 EUR
100+1.32 EUR
250+1.23 EUR
1000+1.16 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF740LCPBF description IRF740LC.pdf
IRF740LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
18+4.09 EUR
35+2.1 EUR
42+1.72 EUR
50+1.52 EUR
100+1.34 EUR
250+1.2 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF740PBF IRF740PBF.pdf
IRF740PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2411 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
31+2.36 EUR
46+1.56 EUR
54+1.34 EUR
55+1.32 EUR
100+1.2 EUR
250+1.07 EUR
500+1 EUR
1000+0.92 EUR
2000+0.86 EUR
Mindestbestellmenge: 31 Stücke
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IRF740SPBF IRF740SPBF.pdf
IRF740SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
19+3.86 EUR
27+2.67 EUR
32+2.26 EUR
50+1.99 EUR
100+1.8 EUR
150+1.7 EUR
250+1.6 EUR
500+1.5 EUR
Mindestbestellmenge: 19 Stücke
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IRF740STRLPBF IRF740SPBF.pdf
IRF740STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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1.5KE18CA-E3/54 15ke_Ser.pdf
1.5KE18CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1481 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
69+1.04 EUR
87+0.83 EUR
105+0.68 EUR
139+0.52 EUR
163+0.44 EUR
174+0.41 EUR
Mindestbestellmenge: 69 Stücke
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1.5KE180CA-E3/54 15ke_Ser.pdf
1.5KE180CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
81+0.89 EUR
99+0.73 EUR
143+0.5 EUR
500+0.42 EUR
1000+0.39 EUR
1400+0.37 EUR
Mindestbestellmenge: 81 Stücke
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1.5KE18A-E3/54 15ke_Ser.pdf
1.5KE18A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
120+0.6 EUR
134+0.54 EUR
142+0.51 EUR
147+0.49 EUR
250+0.47 EUR
500+0.45 EUR
1400+0.42 EUR
Mindestbestellmenge: 120 Stücke
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P6KE200A-E3/54 p6ke.pdf
P6KE200A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 200V
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Kind of package: 13 inch reel
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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1N5817-E3/54 1n5817-19.pdf
1N5817-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3010 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
218+0.33 EUR
253+0.28 EUR
281+0.25 EUR
400+0.18 EUR
486+0.15 EUR
556+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 218 Stücke
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1N5817-E3/73 1n5817-19.pdf
1N5817-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7199 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
250+0.29 EUR
358+0.2 EUR
447+0.16 EUR
532+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 250 Stücke
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1N5819-E3/54 1n5817-19.pdf
1N5819-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 3221 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
186+0.39 EUR
230+0.31 EUR
266+0.27 EUR
417+0.17 EUR
556+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 186 Stücke
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1N5819-E3/73 1n5817-19.pdf
1N5819-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 1467 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
239+0.3 EUR
323+0.22 EUR
468+0.15 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 239 Stücke
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BAV99-E3-08 bav99.pdf
BAV99-E3-08BAV99-E3-08
BAV99-E3-08BAV99-E3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 6609 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
334+0.21 EUR
625+0.11 EUR
1112+0.064 EUR
1511+0.047 EUR
1749+0.041 EUR
3000+0.034 EUR
6000+0.031 EUR
Mindestbestellmenge: 334 Stücke
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BAV99-HE3-08 bav99.pdf
BAV99-HE3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
10+7.15 EUR
Mindestbestellmenge: 10 Stücke
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1N4007GP-E3/54 1n4001gp.pdf
1N4007GP-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
auf Bestellung 6325 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
209+0.34 EUR
249+0.29 EUR
275+0.26 EUR
327+0.22 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 209 Stücke
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357B0102MXB251S22 357.pdf
357B0102MXB251S22
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Mechanical durability: 10000000 cycles
Shaft surface: smooth
Potentiometer features: without limiters
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Linearity tolerance: ±2%
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+43.44 EUR
3+37.88 EUR
10+34.53 EUR
25+32.76 EUR
Mindestbestellmenge: 2 Stücke
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357B2102MAB251S22 357.pdf
357B2102MAB251S22
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Manufacturer series: 357
Mechanical durability: 10000000 cycles
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+41.2 EUR
3+36.35 EUR
10+35.65 EUR
Mindestbestellmenge: 2 Stücke
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VJ1206A100KXAAC vjcommercialseries.pdf
VJ1206A100KXAAC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 10pF
Tolerance: ±10%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 1930 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
510+0.14 EUR
590+0.12 EUR
710+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 510 Stücke
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BAS85-GS08 bas85.pdf
BAS85-GS08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 0.2A
Case: MiniMELF; SOD80
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Max. load current: 0.3A
Features of semiconductor devices: small signal
Type of diode: Schottky switching
Mounting: SMD
Capacitance: 10pF
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
auf Bestellung 102474 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
250+0.29 EUR
345+0.21 EUR
627+0.11 EUR
944+0.076 EUR
1049+0.068 EUR
2500+0.061 EUR
5000+0.057 EUR
7500+0.055 EUR
12500+0.053 EUR
Mindestbestellmenge: 250 Stücke
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BAS85-GS18 bas85.pdf
BAS85-GS18
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
auf Bestellung 14820 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
500+0.14 EUR
770+0.093 EUR
979+0.073 EUR
1208+0.059 EUR
1330+0.054 EUR
2500+0.051 EUR
5000+0.047 EUR
10000+0.041 EUR
Mindestbestellmenge: 500 Stücke
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NTCLE100E3472JB0 ntcle100.pdf
NTCLE100E3472JB0
Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
auf Bestellung 3816 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
152+0.47 EUR
173+0.41 EUR
188+0.38 EUR
212+0.34 EUR
233+0.31 EUR
253+0.28 EUR
269+0.27 EUR
Mindestbestellmenge: 152 Stücke
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1.5KE47CA-E3/54 15ke_Ser.pdf
1.5KE47CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
93+0.77 EUR
118+0.61 EUR
133+0.54 EUR
136+0.53 EUR
Mindestbestellmenge: 93 Stücke
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SIHA25N50E-GE3 siha25n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHB25N50E-GE3 sihb25n50e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG25N50E-GE3 sihg25n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP25N50E-GE3 tf-sihp25n50e-ge3.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR10100-E3/4W MBR10100-E3-4W.pdf
MBR10100-E3/4W
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
90+0.8 EUR
94+0.76 EUR
Mindestbestellmenge: 90 Stücke
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BZX85C12-TAP BZX85C10-TAP.pdf
BZX85C12-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 3705 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
228+0.31 EUR
511+0.14 EUR
650+0.11 EUR
893+0.08 EUR
944+0.076 EUR
Mindestbestellmenge: 228 Stücke
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BZX85C5V1-TAP BZX85C10-TAP.pdf
BZX85C5V1-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 10279 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
193+0.37 EUR
491+0.15 EUR
556+0.13 EUR
633+0.11 EUR
803+0.089 EUR
1000+0.081 EUR
2500+0.073 EUR
5000+0.069 EUR
10000+0.068 EUR
Mindestbestellmenge: 193 Stücke
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IRF540PBF IRF540PBF.pdf
IRF540PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540SPBF irf540s.pdf
IRF540SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLLR4400 TLLx440x-DTE.pdf
TLLR4400
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 0.63...1.2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 50°
auf Bestellung 2016 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
143+0.5 EUR
174+0.41 EUR
204+0.35 EUR
261+0.27 EUR
311+0.23 EUR
360+0.2 EUR
410+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 143 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLLR4400-AS12Z TLLR4400-AS12Z.pdf
TLLR4400-AS12Z
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 0.63...1.2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 25°
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLLR4401 TLLx440x-DTE.pdf
TLLR4401
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 1...2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 50°
auf Bestellung 4002 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
167+0.43 EUR
213+0.34 EUR
239+0.3 EUR
261+0.27 EUR
285+0.25 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 167 Stücke
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BZX55C8V2-TAP BZX55C10-TAP.pdf
BZX55C8V2-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 1574 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
834+0.086 EUR
1352+0.053 EUR
1574+0.046 EUR
Mindestbestellmenge: 834 Stücke
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