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SiHH20N50E-T1-GE3 VISHAY sihh20n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHP20N50E-GE3 SIHP20N50E-GE3 VISHAY sihp20n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHJ7N65E-T1-GE3 SIHJ7N65E-T1-GE3 VISHAY sihj7n65e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CRCW12060000Z0TABC CRCW12060000Z0TABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 0Ω
Power: 0.25W
Operating temperature: -55...155°C
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Tolerance: ±5%
Mounting: SMD
auf Bestellung 122455 Stücke:
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770+0.11 EUR
1725+0.049 EUR
3356+0.025 EUR
7693+0.011 EUR
11112+0.0076 EUR
15674+0.0055 EUR
16182+0.0052 EUR
50000+0.0051 EUR
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BAV70-E3-08BAV70-E3-08
BAV70-E3-08BAV70-E3-08
 BAV70-E3-08 VISHAY bav70.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: small signal
auf Bestellung 18627 Stücke:
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358+0.24 EUR
521+0.17 EUR
834+0.1 EUR
1161+0.074 EUR
1337+0.063 EUR
3000+0.051 EUR
6000+0.044 EUR
9000+0.04 EUR
15000+0.037 EUR
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BAV70-G3-08 BAV70-G3-08 VISHAY bav70g.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: small signal
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LL4148-GS08 LL4148-GS08 VISHAY LL4148-4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
auf Bestellung 637444 Stücke:
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625+0.13 EUR
1352+0.063 EUR
2733+0.031 EUR
5103+0.017 EUR
6173+0.014 EUR
7143+0.012 EUR
7247+0.012 EUR
12500+0.011 EUR
25000+0.011 EUR
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LL4148-GS18 LL4148-GS18 VISHAY LL4148-4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
auf Bestellung 9262 Stücke:
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834+0.1 EUR
1667+0.051 EUR
3013+0.029 EUR
4546+0.019 EUR
5320+0.015 EUR
6173+0.014 EUR
6945+0.012 EUR
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GRC00JS4721E00L GRC00JS4721E00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Mounting: THT
auf Bestellung 71 Stücke:
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53+1.62 EUR
71+1.19 EUR
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293D106X0050E2TE3 293D106X0050E2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - inch: 2917
Case - mm: 7343
auf Bestellung 140 Stücke:
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41+2.11 EUR
51+1.69 EUR
57+1.5 EUR
100+1.33 EUR
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293D106X9050D2TE3 293D106X9050D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 2382 Stücke:
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33+2.65 EUR
54+1.57 EUR
64+1.33 EUR
67+1.29 EUR
100+1.23 EUR
250+1.2 EUR
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293D106X9050E2TE3 293D106X9050E2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 948 Stücke:
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25+3.52 EUR
34+2.51 EUR
50+1.96 EUR
100+1.81 EUR
200+1.69 EUR
400+1.65 EUR
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293D475X0050D2TE3 293D475X0050D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: D
Case - inch: 2917
Case - mm: 7343
auf Bestellung 327 Stücke:
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35+2.49 EUR
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293D475X9050D2TE3 293D475X9050D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Roll diameter max.: 178mm
Case: D
auf Bestellung 1639 Stücke:
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35+2.43 EUR
49+1.74 EUR
64+1.34 EUR
100+1.2 EUR
500+0.9 EUR
1000+0.87 EUR
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293D475X9025B2TE3 293D475X9025B2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
auf Bestellung 5 Stücke:
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5+17.02 EUR
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293D475X9025C2TE3 293D475X9025C2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Roll diameter max.: 178mm
Case: C
auf Bestellung 4851 Stücke:
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125+0.68 EUR
153+0.56 EUR
171+0.5 EUR
205+0.42 EUR
237+0.36 EUR
274+0.31 EUR
500+0.26 EUR
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SIHA240N60E-GE3 SIHA240N60E-GE3 VISHAY siha240n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHD240N60E-GE3 SIHD240N60E-GE3 VISHAY sihd240n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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293D476X0016D2TE3 293D476X0016D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 55 Stücke:
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55+1.55 EUR
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293D476X9010B2TE3 293D476X9010B2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 3472 Stücke:
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99+0.87 EUR
167+0.51 EUR
225+0.38 EUR
241+0.36 EUR
264+0.32 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.26 EUR
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293D476X9010C2TE3 293D476X9010C2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 1165 Stücke:
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90+0.95 EUR
113+0.75 EUR
180+0.48 EUR
225+0.38 EUR
272+0.31 EUR
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293D476X9016C2TE3 293D476X9016C2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: C
Case - inch: 2312
Case - mm: 6032
Manufacturer series: Tantamount
auf Bestellung 17860 Stücke:
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65+1.33 EUR
124+0.69 EUR
184+0.46 EUR
202+0.42 EUR
500+0.38 EUR
1500+0.37 EUR
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293D476X9016D2TE3 293D476X9016D2TE3 VISHAY 293d.pdf description Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 509 Stücke:
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76+1.12 EUR
105+0.81 EUR
131+0.65 EUR
143+0.6 EUR
500+0.49 EUR
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293D476X9020D2TE3 293D476X9020D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 4446 Stücke:
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40+2.17 EUR
48+1.77 EUR
58+1.48 EUR
110+0.77 EUR
135+0.63 EUR
141+0.61 EUR
200+0.58 EUR
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293D476X96R3B2TE3 293D476X96R3B2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Operating temperature: -55...125°C
Case: B
auf Bestellung 7 Stücke:
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7+12.15 EUR
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293D477X96R3D2TE3 293D477X96R3D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
ESR value: 0.5Ω
Case: D
Case - inch: 2917
Case - mm: 7343
auf Bestellung 1894 Stücke:
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11+7.98 EUR
18+4.74 EUR
50+3.72 EUR
100+3.49 EUR
250+3.33 EUR
500+3.18 EUR
1000+3.09 EUR
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1N5408-E3/54 1N5408-E3/54 VISHAY 1n5400_08.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Capacitance: 30pF
Manufacturer standard package: 1400pcs.
auf Bestellung 4094 Stücke:
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120+0.71 EUR
295+0.29 EUR
358+0.24 EUR
376+0.23 EUR
394+0.21 EUR
500+0.2 EUR
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2W10G-E4/51 2W10G-E4/51 VISHAY 2w005g.pdf Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Max. forward voltage: 1.1V
Version: round
Features of semiconductor devices: glass passivated
Leads: wire Ø 0.75mm
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 2A
Kind of package: bulk
Case: WOG
Type of bridge rectifier: single-phase
Max. forward impulse current: 60A
auf Bestellung 2711 Stücke:
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43+1.99 EUR
115+0.75 EUR
136+0.63 EUR
146+0.58 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.4 EUR
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GRC00JE1021H00L GRC00JE1021H00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.02 EUR
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MAL215031102E3 MAL215031102E3 VISHAY 150rmi.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Height: 25mm
Diameter: 16mm
auf Bestellung 141 Stücke:
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23+3.71 EUR
33+2.65 EUR
35+2.43 EUR
38+2.28 EUR
50+2.18 EUR
100+2.11 EUR
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ZRC00JG1021H00L ZRC00JG1021H00L VISHAY ZRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Produkt ist nicht verfügbar
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SI7852DP-T1-GE3 SI7852DP-T1-GE3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Technology: TrenchFET®
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 16.5mΩ
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 41nC
Polarisation: unipolar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SS26S-E3/5AT SS26S-E3/5AT VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
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SS26S-E3/61T SS26S-E3/61T VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 649 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
252+0.33 EUR
302+0.29 EUR
345+0.25 EUR
374+0.23 EUR
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IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.56 EUR
39+2.19 EUR
50+1.94 EUR
100+1.81 EUR
250+1.67 EUR
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IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.64 EUR
30+2.89 EUR
34+2.57 EUR
50+1.98 EUR
100+1.81 EUR
250+1.67 EUR
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IRF840ASTRLPBF IRF840ASTRLPBF VISHAY irf840as_IRF840al.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.44 EUR
31+2.82 EUR
37+2.31 EUR
50+1.94 EUR
100+1.65 EUR
250+1.39 EUR
Mindestbestellmenge: 25 Stücke
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IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 644 Stücke:
Lieferzeit 14-21 Tag (e)
37+2.33 EUR
57+1.51 EUR
64+1.34 EUR
100+1.31 EUR
250+1.24 EUR
500+1.19 EUR
Mindestbestellmenge: 37 Stücke
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IRF840STRLPBF IRF840STRLPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-05-E3-08 BAS40-05-E3-08 VISHAY BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Manufacturer standard package: 3000pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
auf Bestellung 1011 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.23 EUR
562+0.15 EUR
985+0.087 EUR
1011+0.083 EUR
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1.5KE27CA-E3/54 1.5KE27CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1165 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
204+0.42 EUR
500+0.37 EUR
Mindestbestellmenge: 186 Stücke
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1N5822-E3/54 1N5822-E3/54 VISHAY 1n5820-22.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
auf Bestellung 910 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
191+0.44 EUR
204+0.42 EUR
211+0.4 EUR
500+0.31 EUR
Mindestbestellmenge: 179 Stücke
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BYV26C-TAP BYV26C-TAP VISHAY byv26.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
auf Bestellung 1403 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.19 EUR
117+0.73 EUR
146+0.58 EUR
500+0.5 EUR
1000+0.48 EUR
Mindestbestellmenge: 72 Stücke
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BYV26C-TR BYV26C-TR VISHAY byv26.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
Leakage current: 0.1mA
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
173+0.49 EUR
180+0.48 EUR
191+0.45 EUR
250+0.43 EUR
500+0.42 EUR
Mindestbestellmenge: 162 Stücke
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1.5KE400A-E3/54 1.5KE400A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
80+1.07 EUR
94+0.92 EUR
100+0.86 EUR
113+0.75 EUR
250+0.73 EUR
Mindestbestellmenge: 80 Stücke
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IRF740APBF IRF740APBF VISHAY IRF740APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
27+3.27 EUR
47+1.82 EUR
53+1.62 EUR
100+1.48 EUR
250+1.33 EUR
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IRF740ASPBF IRF740ASPBF VISHAY IRF740A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1295 Stücke:
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23+3.81 EUR
30+2.88 EUR
35+2.43 EUR
44+1.95 EUR
50+1.74 EUR
100+1.57 EUR
250+1.46 EUR
1000+1.38 EUR
Mindestbestellmenge: 23 Stücke
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IRF740LCPBF IRF740LCPBF VISHAY IRF740LC.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.87 EUR
35+2.5 EUR
42+2.05 EUR
50+1.81 EUR
100+1.59 EUR
250+1.43 EUR
Mindestbestellmenge: 18 Stücke
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IRF740PBF IRF740PBF VISHAY IRF740PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1661 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.81 EUR
46+1.86 EUR
54+1.59 EUR
55+1.57 EUR
100+1.43 EUR
250+1.27 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 31 Stücke
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IRF740SPBF IRF740SPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.59 EUR
27+3.18 EUR
32+2.69 EUR
50+2.37 EUR
100+2.14 EUR
150+2.02 EUR
250+1.9 EUR
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IRF740STRLPBF IRF740STRLPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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1.5KE18CA-E3/54 1.5KE18CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1451 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.24 EUR
87+0.99 EUR
105+0.81 EUR
139+0.62 EUR
163+0.52 EUR
174+0.49 EUR
Mindestbestellmenge: 69 Stücke
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1.5KE180CA-E3/54 1.5KE180CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1802 Stücke:
Lieferzeit 14-21 Tag (e)
81+1.06 EUR
99+0.87 EUR
143+0.6 EUR
500+0.5 EUR
1000+0.46 EUR
1400+0.44 EUR
Mindestbestellmenge: 81 Stücke
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1.5KE18A-E3/54 1.5KE18A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.71 EUR
134+0.64 EUR
142+0.61 EUR
147+0.58 EUR
250+0.56 EUR
500+0.54 EUR
Mindestbestellmenge: 120 Stücke
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P6KE200A-E3/54 P6KE200A-E3/54 VISHAY p6ke.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Case: DO15; DO204AC
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 200V
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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1N5817-E3/54 1N5817-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.39 EUR
253+0.33 EUR
281+0.3 EUR
400+0.21 EUR
491+0.18 EUR
556+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 218 Stücke
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1N5817-E3/73 1N5817-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
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358+0.24 EUR
447+0.19 EUR
532+0.15 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
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1N5819-E3/54 1N5819-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
auf Bestellung 1466 Stücke:
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148+0.58 EUR
212+0.4 EUR
241+0.36 EUR
329+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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SiHH20N50E-T1-GE3 sihh20n50e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHP20N50E-GE3 sihp20n50e.pdf
SIHP20N50E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHJ7N65E-T1-GE3 sihj7n65e.pdf
SIHJ7N65E-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CRCW12060000Z0TABC Data Sheet CRCW_BCe3.pdf
CRCW12060000Z0TABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 0Ω
Power: 0.25W
Operating temperature: -55...155°C
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Tolerance: ±5%
Mounting: SMD
auf Bestellung 122455 Stücke:
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770+0.11 EUR
1725+0.049 EUR
3356+0.025 EUR
7693+0.011 EUR
11112+0.0076 EUR
15674+0.0055 EUR
16182+0.0052 EUR
50000+0.0051 EUR
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BAV70-E3-08 bav70.pdf
BAV70-E3-08BAV70-E3-08
BAV70-E3-08BAV70-E3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: small signal
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358+0.24 EUR
521+0.17 EUR
834+0.1 EUR
1161+0.074 EUR
1337+0.063 EUR
3000+0.051 EUR
6000+0.044 EUR
9000+0.04 EUR
15000+0.037 EUR
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BAV70-G3-08 bav70g.pdf
BAV70-G3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: small signal
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LL4148-GS08 LL4148-4448.pdf
LL4148-GS08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
auf Bestellung 637444 Stücke:
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625+0.13 EUR
1352+0.063 EUR
2733+0.031 EUR
5103+0.017 EUR
6173+0.014 EUR
7143+0.012 EUR
7247+0.012 EUR
12500+0.011 EUR
25000+0.011 EUR
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LL4148-GS18 LL4148-4448.pdf
LL4148-GS18
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
auf Bestellung 9262 Stücke:
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834+0.1 EUR
1667+0.051 EUR
3013+0.029 EUR
4546+0.019 EUR
5320+0.015 EUR
6173+0.014 EUR
6945+0.012 EUR
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GRC00JS4721E00L GRC.pdf
GRC00JS4721E00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Mounting: THT
auf Bestellung 71 Stücke:
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53+1.62 EUR
71+1.19 EUR
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293D106X0050E2TE3 293d.pdf
293D106X0050E2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - inch: 2917
Case - mm: 7343
auf Bestellung 140 Stücke:
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41+2.11 EUR
51+1.69 EUR
57+1.5 EUR
100+1.33 EUR
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293D106X9050D2TE3 293d.pdf
293D106X9050D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 2382 Stücke:
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33+2.65 EUR
54+1.57 EUR
64+1.33 EUR
67+1.29 EUR
100+1.23 EUR
250+1.2 EUR
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293D106X9050E2TE3 293d.pdf
293D106X9050E2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Case: E
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 948 Stücke:
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25+3.52 EUR
34+2.51 EUR
50+1.96 EUR
100+1.81 EUR
200+1.69 EUR
400+1.65 EUR
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293D475X0050D2TE3 293d.pdf
293D475X0050D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: D
Case - inch: 2917
Case - mm: 7343
auf Bestellung 327 Stücke:
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35+2.49 EUR
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293D475X9050D2TE3 293d.pdf
293D475X9050D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Roll diameter max.: 178mm
Case: D
auf Bestellung 1639 Stücke:
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35+2.43 EUR
49+1.74 EUR
64+1.34 EUR
100+1.2 EUR
500+0.9 EUR
1000+0.87 EUR
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293D475X9025B2TE3 293d.pdf
293D475X9025B2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
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5+17.02 EUR
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293D475X9025C2TE3 293d.pdf
293D475X9025C2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Roll diameter max.: 178mm
Case: C
auf Bestellung 4851 Stücke:
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125+0.68 EUR
153+0.56 EUR
171+0.5 EUR
205+0.42 EUR
237+0.36 EUR
274+0.31 EUR
500+0.26 EUR
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SIHA240N60E-GE3 siha240n60e.pdf
SIHA240N60E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHD240N60E-GE3 sihd240n60e.pdf
SIHD240N60E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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293D476X0016D2TE3 293d.pdf
293D476X0016D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 55 Stücke:
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AnzahlPrivatkunde
55+1.55 EUR
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293D476X9010B2TE3 293d.pdf
293D476X9010B2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 3472 Stücke:
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99+0.87 EUR
167+0.51 EUR
225+0.38 EUR
241+0.36 EUR
264+0.32 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.26 EUR
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293D476X9010C2TE3 293d.pdf
293D476X9010C2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 1165 Stücke:
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180+0.48 EUR
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272+0.31 EUR
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293D476X9016C2TE3 293d.pdf
293D476X9016C2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: C
Case - inch: 2312
Case - mm: 6032
Manufacturer series: Tantamount
auf Bestellung 17860 Stücke:
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65+1.33 EUR
124+0.69 EUR
184+0.46 EUR
202+0.42 EUR
500+0.38 EUR
1500+0.37 EUR
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293D476X9016D2TE3 description 293d.pdf
293D476X9016D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 509 Stücke:
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76+1.12 EUR
105+0.81 EUR
131+0.65 EUR
143+0.6 EUR
500+0.49 EUR
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293D476X9020D2TE3 293d.pdf
293D476X9020D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 4446 Stücke:
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40+2.17 EUR
48+1.77 EUR
58+1.48 EUR
110+0.77 EUR
135+0.63 EUR
141+0.61 EUR
200+0.58 EUR
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293D476X96R3B2TE3 293d.pdf
293D476X96R3B2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Operating temperature: -55...125°C
Case: B
auf Bestellung 7 Stücke:
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7+12.15 EUR
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293D477X96R3D2TE3 293d.pdf
293D477X96R3D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
ESR value: 0.5Ω
Case: D
Case - inch: 2917
Case - mm: 7343
auf Bestellung 1894 Stücke:
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11+7.98 EUR
18+4.74 EUR
50+3.72 EUR
100+3.49 EUR
250+3.33 EUR
500+3.18 EUR
1000+3.09 EUR
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1N5408-E3/54 1n5400_08.pdf
1N5408-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Capacitance: 30pF
Manufacturer standard package: 1400pcs.
auf Bestellung 4094 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
295+0.29 EUR
358+0.24 EUR
376+0.23 EUR
394+0.21 EUR
500+0.2 EUR
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2W10G-E4/51 2w005g.pdf
2W10G-E4/51
Hersteller: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Max. forward voltage: 1.1V
Version: round
Features of semiconductor devices: glass passivated
Leads: wire Ø 0.75mm
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 2A
Kind of package: bulk
Case: WOG
Type of bridge rectifier: single-phase
Max. forward impulse current: 60A
auf Bestellung 2711 Stücke:
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43+1.99 EUR
115+0.75 EUR
136+0.63 EUR
146+0.58 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.4 EUR
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GRC00JE1021H00L GRC.pdf
GRC00JE1021H00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
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5+17.02 EUR
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MAL215031102E3 150rmi.pdf
MAL215031102E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Height: 25mm
Diameter: 16mm
auf Bestellung 141 Stücke:
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23+3.71 EUR
33+2.65 EUR
35+2.43 EUR
38+2.28 EUR
50+2.18 EUR
100+2.11 EUR
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ZRC00JG1021H00L ZRC.pdf
ZRC00JG1021H00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Produkt ist nicht verfügbar
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SI7852DP-T1-GE3 si7852dp.pdf
SI7852DP-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Technology: TrenchFET®
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 16.5mΩ
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 41nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SS26S-E3/5AT ss26s.pdf
SS26S-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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SS26S-E3/61T ss26s.pdf
SS26S-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 649 Stücke:
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186+0.46 EUR
252+0.33 EUR
302+0.29 EUR
345+0.25 EUR
374+0.23 EUR
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IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 281 Stücke:
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24+3.56 EUR
39+2.19 EUR
50+1.94 EUR
100+1.81 EUR
250+1.67 EUR
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IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 485 Stücke:
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24+3.64 EUR
30+2.89 EUR
34+2.57 EUR
50+1.98 EUR
100+1.81 EUR
250+1.67 EUR
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IRF840ASTRLPBF irf840as_IRF840al.pdf
IRF840ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 498 Stücke:
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25+3.44 EUR
31+2.82 EUR
37+2.31 EUR
50+1.94 EUR
100+1.65 EUR
250+1.39 EUR
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IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 644 Stücke:
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37+2.33 EUR
57+1.51 EUR
64+1.34 EUR
100+1.31 EUR
250+1.24 EUR
500+1.19 EUR
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IRF840STRLPBF IRF840SPBF.pdf
IRF840STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS40-05-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-05-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Manufacturer standard package: 3000pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
auf Bestellung 1011 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
562+0.15 EUR
985+0.087 EUR
1011+0.083 EUR
Mindestbestellmenge: 385 Stücke
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1.5KE27CA-E3/54 15ke_Ser.pdf
1.5KE27CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1165 Stücke:
Lieferzeit 14-21 Tag (e)
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186+0.46 EUR
204+0.42 EUR
500+0.37 EUR
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1N5822-E3/54 1n5820-22.pdf
1N5822-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
auf Bestellung 910 Stücke:
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179+0.48 EUR
191+0.44 EUR
204+0.42 EUR
211+0.4 EUR
500+0.31 EUR
Mindestbestellmenge: 179 Stücke
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BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
auf Bestellung 1403 Stücke:
Lieferzeit 14-21 Tag (e)
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72+1.19 EUR
117+0.73 EUR
146+0.58 EUR
500+0.5 EUR
1000+0.48 EUR
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BYV26C-TR description byv26.pdf
BYV26C-TR
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
Leakage current: 0.1mA
auf Bestellung 2160 Stücke:
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162+0.52 EUR
173+0.49 EUR
180+0.48 EUR
191+0.45 EUR
250+0.43 EUR
500+0.42 EUR
Mindestbestellmenge: 162 Stücke
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1.5KE400A-E3/54 15ke_Ser.pdf
1.5KE400A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
80+1.07 EUR
94+0.92 EUR
100+0.86 EUR
113+0.75 EUR
250+0.73 EUR
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IRF740APBF IRF740APBF.pdf
IRF740APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 461 Stücke:
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27+3.27 EUR
47+1.82 EUR
53+1.62 EUR
100+1.48 EUR
250+1.33 EUR
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IRF740ASPBF IRF740A.pdf
IRF740ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1295 Stücke:
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23+3.81 EUR
30+2.88 EUR
35+2.43 EUR
44+1.95 EUR
50+1.74 EUR
100+1.57 EUR
250+1.46 EUR
1000+1.38 EUR
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IRF740LCPBF description IRF740LC.pdf
IRF740LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.87 EUR
35+2.5 EUR
42+2.05 EUR
50+1.81 EUR
100+1.59 EUR
250+1.43 EUR
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IRF740PBF IRF740PBF.pdf
IRF740PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1661 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
31+2.81 EUR
46+1.86 EUR
54+1.59 EUR
55+1.57 EUR
100+1.43 EUR
250+1.27 EUR
500+1.19 EUR
1000+1.09 EUR
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IRF740SPBF IRF740SPBF.pdf
IRF740SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.59 EUR
27+3.18 EUR
32+2.69 EUR
50+2.37 EUR
100+2.14 EUR
150+2.02 EUR
250+1.9 EUR
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IRF740STRLPBF IRF740SPBF.pdf
IRF740STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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1.5KE18CA-E3/54 15ke_Ser.pdf
1.5KE18CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1451 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
69+1.24 EUR
87+0.99 EUR
105+0.81 EUR
139+0.62 EUR
163+0.52 EUR
174+0.49 EUR
Mindestbestellmenge: 69 Stücke
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1.5KE180CA-E3/54 15ke_Ser.pdf
1.5KE180CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1802 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
81+1.06 EUR
99+0.87 EUR
143+0.6 EUR
500+0.5 EUR
1000+0.46 EUR
1400+0.44 EUR
Mindestbestellmenge: 81 Stücke
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1.5KE18A-E3/54 15ke_Ser.pdf
1.5KE18A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
134+0.64 EUR
142+0.61 EUR
147+0.58 EUR
250+0.56 EUR
500+0.54 EUR
Mindestbestellmenge: 120 Stücke
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P6KE200A-E3/54 p6ke.pdf
P6KE200A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Case: DO15; DO204AC
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 200V
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/54 1n5817-19.pdf
1N5817-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
218+0.39 EUR
253+0.33 EUR
281+0.3 EUR
400+0.21 EUR
491+0.18 EUR
556+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 218 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/73 1n5817-19.pdf
1N5817-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 6981 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
358+0.24 EUR
447+0.19 EUR
532+0.15 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 250 Stücke
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1N5819-E3/54 1n5817-19.pdf
1N5819-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
auf Bestellung 1466 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
212+0.4 EUR
241+0.36 EUR
329+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 148 Stücke
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