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CMPA5259050F-AMP CMPA5259050F-AMP Wolfspeed, Inc. CMPA5259050F.pdf Description: AMPLIFIER, 5.2-5.9GHZ, GAN MMIC
Packaging: Bulk
For Use With/Related Products: CMPA5259050F
Frequency: 5.2GHz ~ 5.9GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+2162.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5259050S CMPA5259050S Wolfspeed, Inc. wolfspeed_cmpa5259050s_data_sheet.pdf Description: IC AMP RADAR 5GHZ-5.9GHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 28V
Gain: 23.6dB
Test Frequency: 5.9GHz
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
50+975.99 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5259050S-AMP1 CMPA5259050S-AMP1 Wolfspeed, Inc. wolfspeed_cmpa5259050s_data_sheet.pdf Description: CMPA5259050S DEV BOARD
Packaging: Bulk
For Use With/Related Products: CMPA5259050S
Frequency: 5GHz ~ 5.9GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+1853.03 EUR
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CMPA5259080S CMPA5259080S Wolfspeed, Inc. CMPA5259080S.pdf Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 40V
Gain: 27dB
Current - Supply: 350mA
Test Frequency: 5.9GHz
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5259080S CMPA5259080S Wolfspeed, Inc. CMPA5259080S.pdf Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 40V
Gain: 27dB
Current - Supply: 350mA
Test Frequency: 5.9GHz
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
1+1588.17 EUR
10+1506.02 EUR
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CMPA5259080S-AMP1 CMPA5259080S-AMP1 Wolfspeed, Inc. CMPA5259080S.pdf Description: 5.2-5.9GHZ, AMP W/ CMPA5259080S
Packaging: Bulk
For Use With/Related Products: CMPA5259080S
Frequency: 5GHz ~ 5.9GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+2210.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585025D Wolfspeed, Inc. CMPA5585025D_Rev1.1_Apr2012.pdf Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 30dB
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585025F CMPA5585025F Wolfspeed, Inc. Description: IC AMP GPS 5.5GHZ-8.5GHZ 440208
Packaging: Tray
Package / Case: 440208
Mounting Type: Flange Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Gain: 22dB
Test Frequency: 8.4GHz
Supplier Device Package: 440208
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585025F-AMP Wolfspeed, Inc. Description: AMPLIFIER, 5.5-8.5GHZ, CMPA55850
Packaging: Box
For Use With/Related Products: CMPA5585025F
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585025F-TB CMPA5585025F-TB Wolfspeed, Inc. Description: EVAL BOARD FOR CMPA5585025F
Packaging: Bulk
For Use With/Related Products: CMPA5585025F
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Partially Populated Board - Main IC Not Included
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585030D Wolfspeed, Inc. CMPA5585030D.pdf Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 30dB
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585030F-TB CMPA5585030F-TB Wolfspeed, Inc. cmpa5585030f.pdf Description: TEST BOARD
Packaging: Bulk
For Use With/Related Products: CMPA5585030
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Partially Populated Board - Main IC Not Included
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA601C025F-AMP CMPA601C025F-AMP Wolfspeed, Inc. Wolfspeed_CMPA601C025F.pdf Description: AMPLIFIER, 6.0-12.0GHZ, CMPA601C
Packaging: Box
For Use With/Related Products: CMPA601C025F
Frequency: 6GHz ~ 12GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA801B025F-AMP CMPA801B025F-AMP Wolfspeed, Inc. Wolfspeed_CMPA801B025.pdf Description: CMPA801B025F DEV BOARD WITH HEMT
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+1385.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMPA801B030F-AMP CMPA801B030F-AMP Wolfspeed, Inc. cmpa801b030f.pdf Description: CMPA801B030F DEVELOPMENT BOARD
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+1903.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMPA901A020S-AMP1 CMPA901A020S-AMP1 Wolfspeed, Inc. CMPA901A020S.pdf Description: 9.0-10.0GHZ, AMP W/ CMPA901A020S
Packaging: Bulk
For Use With/Related Products: CMPA901A020S
Frequency: 9GHz ~ 10GHz
Type: Amplifier
Supplied Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+1538.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMPA901A035F CMPA901A035F Wolfspeed, Inc. CMPA901A035F.pdf Description: GAN MMIC 35W 28V 9.0-10.0GHZ
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
CMPA901A035F-AMP CMPA901A035F-AMP Wolfspeed, Inc. CMPA901A035F.pdf Description: CMPA901A035F DEVELOPMENT BOARD
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+2560.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD-001 CRD-001 Wolfspeed, Inc. Description: BOARD EVAL ISOL SIC GATE DRIVER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRD-03600AD065E-L CRD-03600AD065E-L Wolfspeed, Inc. Wolfspeed_PRD-06616_User_Guide_for_CRD-03600AD065E-L.pdf Description: EVAL BOARD FOR C3M0015065D
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: C3M0015065D, C3M0045065L
Supplied Contents: Board(s)
Primary Attributes: 180VAC ~ 265VAC Input Voltage
Embedded: No
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+1811.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD-060DD17P-2 Wolfspeed, Inc. Description: EVAL BOARD FOR C2M1000170D
Packaging: Box
Voltage - Output: 12V, 12V
Voltage - Input: 300V ~ 1000V
Current - Output: 4A, 100mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: C2M1000170D
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 2 Isolated Outputs
Part Status: Obsolete
Power - Output: 60W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRD-15DD17P CRD-15DD17P Wolfspeed, Inc. Wolfspeed_PRD-06980_CRD-15DD17P_15W_Flyback_Auxiliary_Power_Supply_User_Guide.pdf Description: EVAL BOARD FOR C2M1000170J
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 300V ~ 1200V
Current - Output: 1.3A
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: C2M1000170J
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Power - Output: 15W
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+50.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD200DA12E-XM3 CRD200DA12E-XM3 Wolfspeed, Inc. Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf Description: CAB400M12XM3 SIC MODULE DEV KIT
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: CRD200DA12E
Supplied Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+14570.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD250DA12E-XM3 CRD250DA12E-XM3 Wolfspeed, Inc. Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf Description: 250KW XM3 3PHASE INVERTER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB425M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+14768.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD25DA12N-FMC CRD25DA12N-FMC Wolfspeed, Inc. Wolfspeed25kWINVERTER.pdf Description: EVAL BOARD FOR CCB021M12FM3T
Packaging: Box
Voltage - Input: 1kV
Type: Power Management
Region Utilized: International
Remote Capability: No
Power - Output Continuous: 25000 W
Function: Motor Controller/Driver
Contents: Board(s)
Utilized IC / Part: CCB021M12FM3T
Primary Attributes: Three-Phase Inverter
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+7526.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD300DA12E-XM3 CRD300DA12E-XM3 Wolfspeed, Inc. Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Contents: Board(s)
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+15793.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD600DA12E-XM3 CRD600DA12E-XM3 Wolfspeed, Inc. crd600da12e_xm3_data_sheet.pdf Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+42751.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060A CSD01060A Wolfspeed, Inc. Wolfspeed_CSD01060A_data_sheet.pdf Description: DIODE SIL CARB 600V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 8416 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
50+2.18 EUR
100+1.79 EUR
500+1.52 EUR
1000+1.29 EUR
2000+1.22 EUR
5000+1.18 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060E CSD01060E Wolfspeed, Inc. Wolfspeed_CSD01060E_data_sheet.pdf Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.31 EUR
75+1.12 EUR
150+1.1 EUR
525+1.08 EUR
1050+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060E-TR CSD01060E-TR Wolfspeed, Inc. Wolfspeed_CSD01060E_data_sheet.pdf Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.03 EUR
5000+0.97 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060E-TR CSD01060E-TR Wolfspeed, Inc. Wolfspeed_CSD01060E_data_sheet.pdf Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 11296 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
10+2.3 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
CSD02060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 3.5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD02060G Wolfspeed, Inc. Description: DIODE SIL CARB 600V 3.5A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD04060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 7A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD06060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD06060G Wolfspeed, Inc. Description: DIODE SIL CARB 600V 10A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD10060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 16.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD10060G Wolfspeed, Inc. CSD02060G%20SCHEM.jpg Description: DIODE SIL CARB 600V 16.5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD20060D Wolfspeed, Inc. CSD20030D%20SCHEM.jpg Description: DIODE ARR SIC 600V 16.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CVFD20065A CVFD20065A Wolfspeed, Inc. Description: DIODE SIL CARB 650V 57A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Current - Average Rectified (Io): 57A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3D08065G E3D08065G Wolfspeed, Inc. E3D08065G.pdf Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.22 EUR
10+6.47 EUR
100+5.3 EUR
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E3D20065D E3D20065D Wolfspeed, Inc. Wolfspeed_E3D20065D_data_sheet.pdf Description: DIODE ARRAY SIC 650V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 459pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 352 Stücke:
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30+12.77 EUR
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E3D30065D E3D30065D Wolfspeed, Inc. Wolfspeed_E3D30065D_data_sheet.pdf Description: DIODE SIL CARB 650V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
auf Bestellung 429 Stücke:
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1+20.45 EUR
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E3M0016120K E3M0016120K Wolfspeed, Inc. Wolfspeed_E3M0016120K_data_sheet.pdf Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1076 Stücke:
Lieferzeit 10-14 Tag (e)
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30+56.98 EUR
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E3M0021120J2-TR E3M0021120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0021120J2_data_sheet.pdf Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0021120J2-TR E3M0021120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0021120J2_data_sheet.pdf Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.05 EUR
10+44.54 EUR
100+44.09 EUR
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E3M0021120K E3M0021120K Wolfspeed, Inc. Wolfspeed_E3M0021120K_data_sheet.pdf Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 601 Stücke:
Lieferzeit 10-14 Tag (e)
1+43.03 EUR
30+27.76 EUR
120+25.1 EUR
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E3M0032120J2-TR E3M0032120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0032120J2_data_sheet.pdf Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0032120J2-TR E3M0032120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0032120J2_data_sheet.pdf Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
1+50.3 EUR
10+36.96 EUR
100+31.88 EUR
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E3M0040120J2-TR E3M0040120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0040120J2_data_sheet.pdf Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0040120J2-TR E3M0040120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0040120J2_data_sheet.pdf Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.7 EUR
10+27.17 EUR
100+21.95 EUR
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E3M0045065K E3M0045065K Wolfspeed, Inc. Wolfspeed_E3M0045065K_Data_Sheet.pdf Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.11 EUR
30+21.47 EUR
120+19.36 EUR
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E3M0060065D E3M0060065D Wolfspeed, Inc. wolfspeed_E3M0060065D_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.43 EUR
10+23.37 EUR
100+19.74 EUR
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E3M0060065K E3M0060065K Wolfspeed, Inc. wolfspeed_E3M0060065K_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.58 EUR
10+24.42 EUR
100+20.63 EUR
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E3M0075120D E3M0075120D Wolfspeed, Inc. E3M0075120D.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Grade: Automotive
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.67 EUR
10+30.53 EUR
100+26.41 EUR
500+23.93 EUR
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E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.16 EUR
10+20.74 EUR
100+16 EUR
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E3M0075120K E3M0075120K Wolfspeed, Inc. Wolfspeed_E3M0075120K_data_sheet.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Grade: Automotive
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.75 EUR
30+22.58 EUR
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E3M0120090J E3M0120090J Wolfspeed, Inc. Wolfspeed_E3M0120090J_data_sheet.pdf Description: 900V 120M AUTOMOTIVE SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.12 EUR
50+13.52 EUR
Mindestbestellmenge: 2
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E3M0160120D E3M0160120D Wolfspeed, Inc. Wolfspeed_E3M0160120D_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CMPA5259050F-AMP CMPA5259050F.pdf
CMPA5259050F-AMP
Hersteller: Wolfspeed, Inc.
Description: AMPLIFIER, 5.2-5.9GHZ, GAN MMIC
Packaging: Bulk
For Use With/Related Products: CMPA5259050F
Frequency: 5.2GHz ~ 5.9GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2162.02 EUR
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CMPA5259050S wolfspeed_cmpa5259050s_data_sheet.pdf
CMPA5259050S
Hersteller: Wolfspeed, Inc.
Description: IC AMP RADAR 5GHZ-5.9GHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 28V
Gain: 23.6dB
Test Frequency: 5.9GHz
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+975.99 EUR
Mindestbestellmenge: 50
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CMPA5259050S-AMP1 wolfspeed_cmpa5259050s_data_sheet.pdf
CMPA5259050S-AMP1
Hersteller: Wolfspeed, Inc.
Description: CMPA5259050S DEV BOARD
Packaging: Bulk
For Use With/Related Products: CMPA5259050S
Frequency: 5GHz ~ 5.9GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1853.03 EUR
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CMPA5259080S CMPA5259080S.pdf
CMPA5259080S
Hersteller: Wolfspeed, Inc.
Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 40V
Gain: 27dB
Current - Supply: 350mA
Test Frequency: 5.9GHz
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5259080S CMPA5259080S.pdf
CMPA5259080S
Hersteller: Wolfspeed, Inc.
Description: IC AMP RADAR 5GHZ-5.9GHZ 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 5.9GHz
RF Type: Radar
Voltage - Supply: 40V
Gain: 27dB
Current - Supply: 350mA
Test Frequency: 5.9GHz
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1588.17 EUR
10+1506.02 EUR
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CMPA5259080S-AMP1 CMPA5259080S.pdf
CMPA5259080S-AMP1
Hersteller: Wolfspeed, Inc.
Description: 5.2-5.9GHZ, AMP W/ CMPA5259080S
Packaging: Bulk
For Use With/Related Products: CMPA5259080S
Frequency: 5GHz ~ 5.9GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2210.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585025D CMPA5585025D_Rev1.1_Apr2012.pdf
Hersteller: Wolfspeed, Inc.
Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 30dB
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585025F
CMPA5585025F
Hersteller: Wolfspeed, Inc.
Description: IC AMP GPS 5.5GHZ-8.5GHZ 440208
Packaging: Tray
Package / Case: 440208
Mounting Type: Flange Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Gain: 22dB
Test Frequency: 8.4GHz
Supplier Device Package: 440208
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585025F-AMP
Hersteller: Wolfspeed, Inc.
Description: AMPLIFIER, 5.5-8.5GHZ, CMPA55850
Packaging: Box
For Use With/Related Products: CMPA5585025F
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585025F-TB
CMPA5585025F-TB
Hersteller: Wolfspeed, Inc.
Description: EVAL BOARD FOR CMPA5585025F
Packaging: Bulk
For Use With/Related Products: CMPA5585025F
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Partially Populated Board - Main IC Not Included
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585030D CMPA5585030D.pdf
Hersteller: Wolfspeed, Inc.
Description: IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Frequency: 5.5GHz ~ 8.5GHz
RF Type: General Purpose
Voltage - Supply: 28V
Gain: 30dB
Supplier Device Package: Die
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA5585030F-TB cmpa5585030f.pdf
CMPA5585030F-TB
Hersteller: Wolfspeed, Inc.
Description: TEST BOARD
Packaging: Bulk
For Use With/Related Products: CMPA5585030
Frequency: 5.5GHz ~ 8.5GHz
Type: Amplifier
Supplied Contents: Partially Populated Board - Main IC Not Included
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA601C025F-AMP Wolfspeed_CMPA601C025F.pdf
CMPA601C025F-AMP
Hersteller: Wolfspeed, Inc.
Description: AMPLIFIER, 6.0-12.0GHZ, CMPA601C
Packaging: Box
For Use With/Related Products: CMPA601C025F
Frequency: 6GHz ~ 12GHz
Type: Amplifier
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMPA801B025F-AMP Wolfspeed_CMPA801B025.pdf
CMPA801B025F-AMP
Hersteller: Wolfspeed, Inc.
Description: CMPA801B025F DEV BOARD WITH HEMT
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1385.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMPA801B030F-AMP cmpa801b030f.pdf
CMPA801B030F-AMP
Hersteller: Wolfspeed, Inc.
Description: CMPA801B030F DEVELOPMENT BOARD
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1903.09 EUR
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CMPA901A020S-AMP1 CMPA901A020S.pdf
CMPA901A020S-AMP1
Hersteller: Wolfspeed, Inc.
Description: 9.0-10.0GHZ, AMP W/ CMPA901A020S
Packaging: Bulk
For Use With/Related Products: CMPA901A020S
Frequency: 9GHz ~ 10GHz
Type: Amplifier
Supplied Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1538.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMPA901A035F CMPA901A035F.pdf
CMPA901A035F
Hersteller: Wolfspeed, Inc.
Description: GAN MMIC 35W 28V 9.0-10.0GHZ
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
CMPA901A035F-AMP CMPA901A035F.pdf
CMPA901A035F-AMP
Hersteller: Wolfspeed, Inc.
Description: CMPA901A035F DEVELOPMENT BOARD
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2560.27 EUR
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CRD-001
CRD-001
Hersteller: Wolfspeed, Inc.
Description: BOARD EVAL ISOL SIC GATE DRIVER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRD-03600AD065E-L Wolfspeed_PRD-06616_User_Guide_for_CRD-03600AD065E-L.pdf
CRD-03600AD065E-L
Hersteller: Wolfspeed, Inc.
Description: EVAL BOARD FOR C3M0015065D
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: C3M0015065D, C3M0045065L
Supplied Contents: Board(s)
Primary Attributes: 180VAC ~ 265VAC Input Voltage
Embedded: No
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1811.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD-060DD17P-2
Hersteller: Wolfspeed, Inc.
Description: EVAL BOARD FOR C2M1000170D
Packaging: Box
Voltage - Output: 12V, 12V
Voltage - Input: 300V ~ 1000V
Current - Output: 4A, 100mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: C2M1000170D
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 2 Isolated Outputs
Part Status: Obsolete
Power - Output: 60W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRD-15DD17P Wolfspeed_PRD-06980_CRD-15DD17P_15W_Flyback_Auxiliary_Power_Supply_User_Guide.pdf
CRD-15DD17P
Hersteller: Wolfspeed, Inc.
Description: EVAL BOARD FOR C2M1000170J
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 300V ~ 1200V
Current - Output: 1.3A
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: C2M1000170J
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Power - Output: 15W
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD200DA12E-XM3 Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf
CRD200DA12E-XM3
Hersteller: Wolfspeed, Inc.
Description: CAB400M12XM3 SIC MODULE DEV KIT
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: CRD200DA12E
Supplied Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14570.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD250DA12E-XM3 Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf
CRD250DA12E-XM3
Hersteller: Wolfspeed, Inc.
Description: 250KW XM3 3PHASE INVERTER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB425M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14768.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD25DA12N-FMC Wolfspeed25kWINVERTER.pdf
CRD25DA12N-FMC
Hersteller: Wolfspeed, Inc.
Description: EVAL BOARD FOR CCB021M12FM3T
Packaging: Box
Voltage - Input: 1kV
Type: Power Management
Region Utilized: International
Remote Capability: No
Power - Output Continuous: 25000 W
Function: Motor Controller/Driver
Contents: Board(s)
Utilized IC / Part: CCB021M12FM3T
Primary Attributes: Three-Phase Inverter
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7526.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD300DA12E-XM3 Wolfspeed_PRD-06975_XM3_Three-Phase_Inverter_Reference_Design_User_Guide.pdf
CRD300DA12E-XM3
Hersteller: Wolfspeed, Inc.
Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Contents: Board(s)
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15793.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CRD600DA12E-XM3 crd600da12e_xm3_data_sheet.pdf
CRD600DA12E-XM3
Hersteller: Wolfspeed, Inc.
Description: EVAL BRD CAB450M12XM3 CGD12HBXMP
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CAB450M12XM3, CGD12HBXMP
Supplied Contents: Board(s)
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42751.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060A Wolfspeed_CSD01060A_data_sheet.pdf
CSD01060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 8416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
50+2.18 EUR
100+1.79 EUR
500+1.52 EUR
1000+1.29 EUR
2000+1.22 EUR
5000+1.18 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060E Wolfspeed_CSD01060E_data_sheet.pdf
CSD01060E
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
75+1.12 EUR
150+1.1 EUR
525+1.08 EUR
1050+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060E-TR Wolfspeed_CSD01060E_data_sheet.pdf
CSD01060E-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.03 EUR
5000+0.97 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CSD01060E-TR Wolfspeed_CSD01060E_data_sheet.pdf
CSD01060E-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 4A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 11296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.3 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.14 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
CSD02060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 3.5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD02060G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 3.5A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD04060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 7A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD06060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD06060G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 10A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD10060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 16.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD10060G CSD02060G%20SCHEM.jpg
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 16.5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD20060D CSD20030D%20SCHEM.jpg
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 600V 16.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CVFD20065A
CVFD20065A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 57A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Current - Average Rectified (Io): 57A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3D08065G E3D08065G.pdf
E3D08065G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.22 EUR
10+6.47 EUR
100+5.3 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
E3D20065D Wolfspeed_E3D20065D_data_sheet.pdf
E3D20065D
Hersteller: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 650V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 459pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.54 EUR
30+12.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
E3D30065D Wolfspeed_E3D30065D_data_sheet.pdf
E3D30065D
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.45 EUR
30+12.33 EUR
120+10.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0016120K Wolfspeed_E3M0016120K_data_sheet.pdf
E3M0016120K
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1076 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+83.12 EUR
30+56.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0021120J2-TR Wolfspeed_E3M0021120J2_data_sheet.pdf
E3M0021120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0021120J2-TR Wolfspeed_E3M0021120J2_data_sheet.pdf
E3M0021120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.05 EUR
10+44.54 EUR
100+44.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0021120K Wolfspeed_E3M0021120K_data_sheet.pdf
E3M0021120K
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.03 EUR
30+27.76 EUR
120+25.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0032120J2-TR Wolfspeed_E3M0032120J2_data_sheet.pdf
E3M0032120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0032120J2-TR Wolfspeed_E3M0032120J2_data_sheet.pdf
E3M0032120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.3 EUR
10+36.96 EUR
100+31.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0040120J2-TR Wolfspeed_E3M0040120J2_data_sheet.pdf
E3M0040120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0040120J2-TR Wolfspeed_E3M0040120J2_data_sheet.pdf
E3M0040120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.7 EUR
10+27.17 EUR
100+21.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0045065K Wolfspeed_E3M0045065K_Data_Sheet.pdf
E3M0045065K
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.11 EUR
30+21.47 EUR
120+19.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0060065D wolfspeed_E3M0060065D_data_sheet.pdf
E3M0060065D
Hersteller: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.43 EUR
10+23.37 EUR
100+19.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0060065K wolfspeed_E3M0060065K_data_sheet.pdf
E3M0060065K
Hersteller: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.58 EUR
10+24.42 EUR
100+20.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120D E3M0075120D.pdf
E3M0075120D
Hersteller: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Grade: Automotive
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.67 EUR
10+30.53 EUR
100+26.41 EUR
500+23.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.16 EUR
10+20.74 EUR
100+16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120K Wolfspeed_E3M0075120K_data_sheet.pdf
E3M0075120K
Hersteller: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Grade: Automotive
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.75 EUR
30+22.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0120090J Wolfspeed_E3M0120090J_data_sheet.pdf
E3M0120090J
Hersteller: Wolfspeed, Inc.
Description: 900V 120M AUTOMOTIVE SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.12 EUR
50+13.52 EUR
Mindestbestellmenge: 2
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E3M0160120D Wolfspeed_E3M0160120D_data_sheet.pdf
E3M0160120D
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
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