Produkte > WOLFSPEED, INC. > Alle Produkte des Herstellers WOLFSPEED, INC. (556) > Seite 10 nach 10
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PXAE1837078NB-V1-R2 | Wolfspeed, Inc. | Description: SI LDMOS AMP 300W 1805-1880MHZ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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PXAE183708NB-V1-R2 | Wolfspeed, Inc. |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
PXAE213708NB-V1-R0 | Wolfspeed, Inc. | Description: SI LDMOS AMP 370W 2110-2170MHZ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
PXAE213708NB-V1-R2 | Wolfspeed, Inc. |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
PXAE263708NB-V1-R0 | Wolfspeed, Inc. | Description: SI LDMOS AMP 370W 2496-2690MHZ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
PXAE263708NB-V1-R2 | Wolfspeed, Inc. |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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PXFC192207FH-V3-R0 | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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PXFC192207FH-V3-R250 | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
PXFC192207NF-V1-R500 | Wolfspeed, Inc. |
![]() Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
QE4D02120E-TR | Wolfspeed, Inc. |
Description: 1200V SCHOTTKY Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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WAB300M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 382A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 24500pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 300A, 15V Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 92mA Supplier Device Package: Module Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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WAB400M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 468A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 800V Rds On (Max) @ Id, Vgs: 4.25mOhm @ 400A, 15V Gate Charge (Qg) (Max) @ Vgs: 1040nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 106mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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WAS175M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 43mA Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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WAS310M17BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 310A FET Feature: Standard Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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WAS350M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 85mA Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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WAS530M12BM3 | Wolfspeed, Inc. |
![]() Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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PXAE1837078NB-V1-R2 |
Hersteller: Wolfspeed, Inc.
Description: SI LDMOS AMP 300W 1805-1880MHZ
Description: SI LDMOS AMP 300W 1805-1880MHZ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PXAE183708NB-V1-R2 |
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Hersteller: Wolfspeed, Inc.
Description: 320W, SI LDMOS, 28V, 1805-1880MH
Description: 320W, SI LDMOS, 28V, 1805-1880MH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PXAE213708NB-V1-R0 |
Hersteller: Wolfspeed, Inc.
Description: SI LDMOS AMP 370W 2110-2170MHZ
Description: SI LDMOS AMP 370W 2110-2170MHZ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PXAE213708NB-V1-R2 |
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Hersteller: Wolfspeed, Inc.
Description: SI LDMOS AMP 370W 2110-2170MHZ
Description: SI LDMOS AMP 370W 2110-2170MHZ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PXAE263708NB-V1-R0 |
Hersteller: Wolfspeed, Inc.
Description: SI LDMOS AMP 370W 2496-2690MHZ
Description: SI LDMOS AMP 370W 2496-2690MHZ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PXAE263708NB-V1-R2 |
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Hersteller: Wolfspeed, Inc.
Description: SI LDMOS AMP 370W 2496-2690MHZ
Description: SI LDMOS AMP 370W 2496-2690MHZ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WAB300M12BM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 382A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 382A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 24500pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 300A, 15V
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 382A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 382A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 24500pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 300A, 15V
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Supplier Device Package: Module
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WAB400M12BM3 |
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Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 468A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 468A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 800V
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1040nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 106mA
Supplier Device Package: Module
Part Status: Active
Description: SIC 2N-CH 1200V 468A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 468A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 800V
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1040nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 106mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 1743.39 EUR |
WAS175M12BM3 |
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Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 175A, 1200V, 62MM,
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Description: SIC, MODULE, 175A, 1200V, 62MM,
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 997.6 EUR |
WAS310M17BM3 |
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Hersteller: Wolfspeed, Inc.
Description: SIC MODULE 310A 1700V 62MM HALF-
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 310A
FET Feature: Standard
Part Status: Active
Description: SIC MODULE 310A 1700V 62MM HALF-
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 310A
FET Feature: Standard
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 2151.62 EUR |
WAS350M12BM3 |
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Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
Description: SIC 2N-CH 1200V 417A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WAS530M12BM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 1728.36 EUR |