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CSD02060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 3.5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD02060G Wolfspeed, Inc. Description: DIODE SIL CARB 600V 3.5A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD04060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 7A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CSD06060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD06060G Wolfspeed, Inc. Description: DIODE SIL CARB 600V 10A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD10060A Wolfspeed, Inc. Description: DIODE SIL CARB 600V 16.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD10060G Wolfspeed, Inc. CSD02060G%20SCHEM.jpg Description: DIODE SIL CARB 600V 16.5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD20030D Wolfspeed, Inc. Description: DIODE ARR SCHOT 300V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 180 Stücke
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CSD20060D Wolfspeed, Inc. CSD20030D%20SCHEM.jpg Description: DIODE ARR SIC 600V 16.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CVFD20065A CVFD20065A Wolfspeed, Inc. Description: DIODE SIL CARB 650V 57A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Current - Average Rectified (Io): 57A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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E3D08065G E3D08065G Wolfspeed, Inc. E3D08065G.pdf Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.59 EUR
10+7.7 EUR
100+6.31 EUR
Mindestbestellmenge: 3 Stücke
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E3D20065D E3D20065D Wolfspeed, Inc. Wolfspeed_E3D20065D_data_sheet.pdf Description: DIODE ARRAY SIC 650V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 459pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 352 Stücke:
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2+19.68 EUR
30+15.2 EUR
Mindestbestellmenge: 2 Stücke
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E3D30065D E3D30065D Wolfspeed, Inc. Wolfspeed_E3D30065D_data_sheet.pdf Description: DIODE SIL CARB 650V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
auf Bestellung 429 Stücke:
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1+24.34 EUR
30+14.67 EUR
120+12.55 EUR
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E3M0016120K E3M0016120K Wolfspeed, Inc. Wolfspeed_E3M0016120K_data_sheet.pdf Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 884 Stücke:
Lieferzeit 10-14 Tag (e)
1+51.94 EUR
30+33.52 EUR
60+31.33 EUR
120+29.76 EUR
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E3M0021120J2-TR E3M0021120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0021120J2_data_sheet.pdf Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E3M0021120J2-TR E3M0021120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0021120J2_data_sheet.pdf Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.87 EUR
10+26.29 EUR
50+23.38 EUR
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E3M0021120K E3M0021120K Wolfspeed, Inc. Wolfspeed_E3M0021120K_data_sheet.pdf Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.87 EUR
30+23.03 EUR
60+21.37 EUR
120+19.99 EUR
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E3M0032120J2-TR E3M0032120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0032120J2_data_sheet.pdf Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.86 EUR
10+43.98 EUR
100+37.94 EUR
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E3M0032120J2-TR E3M0032120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0032120J2_data_sheet.pdf Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E3M0040120J2-TR E3M0040120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0040120J2_data_sheet.pdf Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E3M0040120J2-TR E3M0040120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0040120J2_data_sheet.pdf Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.86 EUR
10+32.33 EUR
100+26.12 EUR
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E3M0045065K E3M0045065K Wolfspeed, Inc. Wolfspeed_E3M0045065K_Data_Sheet.pdf Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.59 EUR
30+25.55 EUR
120+23.04 EUR
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E3M0060065D E3M0060065D Wolfspeed, Inc. Wolfspeed_E3M0060065D_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.94 EUR
30+19.21 EUR
120+16.8 EUR
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E3M0060065K E3M0060065K Wolfspeed, Inc. wolfspeed_E3M0060065K_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.94 EUR
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120+16.8 EUR
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E3M0075120D E3M0075120D Wolfspeed, Inc. E3M0075120D.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
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E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+7.62 EUR
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E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 853 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.98 EUR
10+11.63 EUR
100+9.33 EUR
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E3M0075120K E3M0075120K Wolfspeed, Inc. Wolfspeed_E3M0075120K_data_sheet.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 431 Stücke:
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E3M0120090J E3M0120090J Wolfspeed, Inc. Wolfspeed_E3M0120090J_data_sheet.pdf Description: 900V 120M AUTOMOTIVE SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.18 EUR
50+16.09 EUR
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E3M0160120D E3M0160120D Wolfspeed, Inc. Wolfspeed_E3M0160120D_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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E3M0160120J2-TR E3M0160120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0160120J2_data_sheet.pdf Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.54 EUR
10+13.46 EUR
100+10.01 EUR
Mindestbestellmenge: 2 Stücke
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E3M0160120J2-TR E3M0160120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0160120J2_data_sheet.pdf Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E3M0160120K Wolfspeed, Inc. Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max): 115W
Supplier Device Package: TO-247-4L
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 450 Stücke
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E3M0900170D E3M0900170D Wolfspeed, Inc. Wolfspeed_E3M0900170D_data_sheet.pdf Description: SIC, MOSFET, 900M, 1700V, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Qualification: AEC-Q101
auf Bestellung 113 Stücke:
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3+10.25 EUR
30+5.75 EUR
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E4D02120E-TR E4D02120E-TR Wolfspeed, Inc. Wolfspeed_E4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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E4D02120E-TR E4D02120E-TR Wolfspeed, Inc. Wolfspeed_E4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 2674 Stücke:
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5+4.66 EUR
10+3.88 EUR
100+3.08 EUR
500+2.61 EUR
1000+2.21 EUR
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E4D10120A E4D10120A Wolfspeed, Inc. Wolfspeed_E4D10120A_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
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1+26.39 EUR
50+16.17 EUR
100+15.84 EUR
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E4D20120A E4D20120A Wolfspeed, Inc. Wolfspeed_E4D20120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 253 Stücke:
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1+40.61 EUR
50+31.98 EUR
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E4D20120D E4D20120D Wolfspeed, Inc. Wolfspeed_E4D20120D_data_sheet.pdf Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 131 Stücke:
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1+53.55 EUR
30+34.56 EUR
120+30.4 EUR
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E4D20120G E4D20120G Wolfspeed, Inc. Wolfspeed_E4D20120G_data_sheet.pdf Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2237 Stücke:
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1+45.74 EUR
50+27.75 EUR
100+26.03 EUR
500+25.94 EUR
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E4M0013120K E4M0013120K Wolfspeed, Inc. Wolfspeed_E4M0013120K_data_sheet.pdf Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 348 Stücke:
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1+138.06 EUR
30+99.21 EUR
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E4M0015075J2-TR E4M0015075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075J2_data_sheet.pdf Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+22.99 EUR
Mindestbestellmenge: 800 Stücke
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E4M0015075J2-TR E4M0015075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075J2_data_sheet.pdf Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 1182 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.58 EUR
10+30.64 EUR
50+28.13 EUR
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E4M0015075U2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075U2_data_sheet.pdf Description: SIC, MOSFET,15M,750V, TSC (U2) ,
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E4M0025075J2-TR E4M0025075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0025075J2_data_sheet.pdf Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+20.06 EUR
Mindestbestellmenge: 800 Stücke
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E4M0025075J2-TR E4M0025075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0025075J2_data_sheet.pdf Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 841 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.08 EUR
10+27.25 EUR
50+24.55 EUR
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E4M0025075K1 E4M0025075K1 Wolfspeed, Inc. Wolfspeed_E4M0025075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.08 EUR
30+23.91 EUR
60+22.23 EUR
120+20.81 EUR
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E4M0045075J2-TR E4M0045075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0045075J2_data_sheet.pdf Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E4M0045075J2-TR E4M0045075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0045075J2_data_sheet.pdf Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
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1+25.18 EUR
10+17.6 EUR
100+14.72 EUR
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E4M0045075K1 E4M0045075K1 Wolfspeed, Inc. Wolfspeed_E4M0045075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 139W 3.8V NC
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 198 Stücke:
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1+25.18 EUR
30+15.26 EUR
120+13.09 EUR
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E4M0060075J2-TR E4M0060075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0060075J2_data_sheet.pdf Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 658 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.64 EUR
10+12.79 EUR
50+10.29 EUR
100+9.65 EUR
Mindestbestellmenge: 2 Stücke
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E4M0060075J2-TR E4M0060075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0060075J2_data_sheet.pdf Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E4M0060075K1 E4M0060075K1 Wolfspeed, Inc. Wolfspeed_E4M0060075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 126W 3.8V NC
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 205 Stücke:
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2+18.64 EUR
30+10.98 EUR
60+10.07 EUR
120+9.29 EUR
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E4MS036120J2-TR E4MS036120J2-TR Wolfspeed, Inc. Wolfspeed_E4MS036120J2_data_sheet.pdf Description: 36MO 1200V SIC MOSFET IN TO263-7
auf Bestellung 800 Stücke:
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800+10.71 EUR
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E4MS036120J2-TR E4MS036120J2-TR Wolfspeed, Inc. Wolfspeed_E4MS036120J2_data_sheet.pdf Description: 36MO 1200V SIC MOSFET IN TO263-7
auf Bestellung 800 Stücke:
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1+23.56 EUR
10+16.37 EUR
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100+13.11 EUR
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E4MS036120K E4MS036120K Wolfspeed, Inc. Wolfspeed_E4MS036120K_data_sheet.pdf Description: 36MO 1200V SIC MOSFET IN TO247-4
auf Bestellung 88 Stücke:
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1+24.97 EUR
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60+13.82 EUR
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E4MS065120U2-TR E4MS065120U2-TR Wolfspeed, Inc. Wolfspeed_E4MS065120U2_data_sheet.pdf Description: 65MO 1200V SIC MOSFET IN TSC(U2)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E4MS065120U2-TR E4MS065120U2-TR Wolfspeed, Inc. Wolfspeed_E4MS065120U2_data_sheet.pdf Description: 65MO 1200V SIC MOSFET IN TSC(U2)
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.83 EUR
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50+7.41 EUR
100+6.79 EUR
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E6D10065A E6D10065A Wolfspeed, Inc. Wolfspeed_E6D10065A_data_sheet.pdf Description: SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.48 EUR
10+5.55 EUR
50+4.32 EUR
100+3.93 EUR
250+3.89 EUR
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E6D10065G E6D10065G Wolfspeed, Inc. 215575 Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.16 EUR
10+6.64 EUR
50+5.15 EUR
100+4.68 EUR
250+4.16 EUR
500+3.86 EUR
1000+3.68 EUR
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CSD02060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 3.5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD02060G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 3.5A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD04060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 7A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD06060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD06060G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 10A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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CSD10060A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 16.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD10060G CSD02060G%20SCHEM.jpg
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 600V 16.5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 16.5A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD20030D
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SCHOT 300V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Produkt ist nicht verfügbar
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CSD20060D CSD20030D%20SCHEM.jpg
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 600V 16.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16.5A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CVFD20065A
CVFD20065A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 57A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Current - Average Rectified (Io): 57A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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E3D08065G E3D08065G.pdf
E3D08065G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.59 EUR
10+7.7 EUR
100+6.31 EUR
Mindestbestellmenge: 3 Stücke
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E3D20065D Wolfspeed_E3D20065D_data_sheet.pdf
E3D20065D
Hersteller: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 650V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 459pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.68 EUR
30+15.2 EUR
Mindestbestellmenge: 2 Stücke
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E3D30065D Wolfspeed_E3D30065D_data_sheet.pdf
E3D30065D
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.34 EUR
30+14.67 EUR
120+12.55 EUR
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E3M0016120K Wolfspeed_E3M0016120K_data_sheet.pdf
E3M0016120K
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 884 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+51.94 EUR
30+33.52 EUR
60+31.33 EUR
120+29.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0021120J2-TR Wolfspeed_E3M0021120J2_data_sheet.pdf
E3M0021120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E3M0021120J2-TR Wolfspeed_E3M0021120J2_data_sheet.pdf
E3M0021120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 21m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 62.12A, 15V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 17.1mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.87 EUR
10+26.29 EUR
50+23.38 EUR
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E3M0021120K Wolfspeed_E3M0021120K_data_sheet.pdf
E3M0021120K
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 21M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 62.1A, 15V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.1mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.87 EUR
30+23.03 EUR
60+21.37 EUR
120+19.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0032120J2-TR Wolfspeed_E3M0032120J2_data_sheet.pdf
E3M0032120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+59.86 EUR
10+43.98 EUR
100+37.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0032120J2-TR Wolfspeed_E3M0032120J2_data_sheet.pdf
E3M0032120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 32m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 38.9A, 15V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 10.7mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
E3M0040120J2-TR Wolfspeed_E3M0040120J2_data_sheet.pdf
E3M0040120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E3M0040120J2-TR Wolfspeed_E3M0040120J2_data_sheet.pdf
E3M0040120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 40m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 31.9A, 15V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 8.77mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2726 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+44.86 EUR
10+32.33 EUR
100+26.12 EUR
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E3M0045065K Wolfspeed_E3M0045065K_Data_Sheet.pdf
E3M0045065K
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+40.59 EUR
30+25.55 EUR
120+23.04 EUR
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E3M0060065D Wolfspeed_E3M0060065D_data_sheet.pdf
E3M0060065D
Hersteller: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+30.94 EUR
30+19.21 EUR
120+16.8 EUR
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E3M0060065K wolfspeed_E3M0060065K_data_sheet.pdf
E3M0060065K
Hersteller: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+30.94 EUR
30+19.21 EUR
120+16.8 EUR
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E3M0075120D E3M0075120D.pdf
E3M0075120D
Hersteller: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+41.26 EUR
10+36.33 EUR
100+31.43 EUR
500+28.48 EUR
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E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+7.62 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 853 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.98 EUR
10+11.63 EUR
100+9.33 EUR
Mindestbestellmenge: 2 Stücke
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E3M0075120K Wolfspeed_E3M0075120K_data_sheet.pdf
E3M0075120K
Hersteller: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.11 EUR
30+14.51 EUR
120+12.41 EUR
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E3M0120090J Wolfspeed_E3M0120090J_data_sheet.pdf
E3M0120090J
Hersteller: Wolfspeed, Inc.
Description: 900V 120M AUTOMOTIVE SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.18 EUR
50+16.09 EUR
Mindestbestellmenge: 2 Stücke
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E3M0160120D Wolfspeed_E3M0160120D_data_sheet.pdf
E3M0160120D
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
E3M0160120J2-TR Wolfspeed_E3M0160120J2_data_sheet.pdf
E3M0160120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.54 EUR
10+13.46 EUR
100+10.01 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
E3M0160120J2-TR Wolfspeed_E3M0160120J2_data_sheet.pdf
E3M0160120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E3M0160120K
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max): 115W
Supplier Device Package: TO-247-4L
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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E3M0900170D Wolfspeed_E3M0900170D_data_sheet.pdf
E3M0900170D
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 900M, 1700V, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Qualification: AEC-Q101
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.25 EUR
30+5.75 EUR
Mindestbestellmenge: 3 Stücke
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E4D02120E-TR Wolfspeed_E4D02120E_data_sheet.pdf
E4D02120E-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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E4D02120E-TR Wolfspeed_E4D02120E_data_sheet.pdf
E4D02120E-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 2674 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.66 EUR
10+3.88 EUR
100+3.08 EUR
500+2.61 EUR
1000+2.21 EUR
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E4D10120A Wolfspeed_E4D10120A_data_sheet.pdf
E4D10120A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.39 EUR
50+16.17 EUR
100+15.84 EUR
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E4D20120A Wolfspeed_E4D20120A_data_sheet.pdf
E4D20120A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Current - Average Rectified (Io): 54.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+40.61 EUR
50+31.98 EUR
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E4D20120D Wolfspeed_E4D20120D_data_sheet.pdf
E4D20120D
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+53.55 EUR
30+34.56 EUR
120+30.4 EUR
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E4D20120G Wolfspeed_E4D20120G_data_sheet.pdf
E4D20120G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+45.74 EUR
50+27.75 EUR
100+26.03 EUR
500+25.94 EUR
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E4M0013120K Wolfspeed_E4M0013120K_data_sheet.pdf
E4M0013120K
Hersteller: Wolfspeed, Inc.
Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+138.06 EUR
30+99.21 EUR
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E4M0015075J2-TR Wolfspeed_E4M0015075J2_data_sheet.pdf
E4M0015075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+22.99 EUR
Mindestbestellmenge: 800 Stücke
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E4M0015075J2-TR Wolfspeed_E4M0015075J2_data_sheet.pdf
E4M0015075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 1182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+42.58 EUR
10+30.64 EUR
50+28.13 EUR
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E4M0015075U2-TR Wolfspeed_E4M0015075U2_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET,15M,750V, TSC (U2) ,
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E4M0025075J2-TR Wolfspeed_E4M0025075J2_data_sheet.pdf
E4M0025075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+20.06 EUR
Mindestbestellmenge: 800 Stücke
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E4M0025075J2-TR Wolfspeed_E4M0025075J2_data_sheet.pdf
E4M0025075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 841 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.08 EUR
10+27.25 EUR
50+24.55 EUR
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E4M0025075K1 Wolfspeed_E4M0025075K1_data_sheet.pdf
E4M0025075K1
Hersteller: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.08 EUR
30+23.91 EUR
60+22.23 EUR
120+20.81 EUR
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E4M0045075J2-TR Wolfspeed_E4M0045075J2_data_sheet.pdf
E4M0045075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E4M0045075J2-TR Wolfspeed_E4M0045075J2_data_sheet.pdf
E4M0045075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.18 EUR
10+17.6 EUR
100+14.72 EUR
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E4M0045075K1 Wolfspeed_E4M0045075K1_data_sheet.pdf
E4M0045075K1
Hersteller: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 139W 3.8V NC
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.18 EUR
30+15.26 EUR
120+13.09 EUR
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E4M0060075J2-TR Wolfspeed_E4M0060075J2_data_sheet.pdf
E4M0060075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 658 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.64 EUR
10+12.79 EUR
50+10.29 EUR
100+9.65 EUR
Mindestbestellmenge: 2 Stücke
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E4M0060075J2-TR Wolfspeed_E4M0060075J2_data_sheet.pdf
E4M0060075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E4M0060075K1 Wolfspeed_E4M0060075K1_data_sheet.pdf
E4M0060075K1
Hersteller: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 126W 3.8V NC
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.64 EUR
30+10.98 EUR
60+10.07 EUR
120+9.29 EUR
Mindestbestellmenge: 2 Stücke
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E4MS036120J2-TR Wolfspeed_E4MS036120J2_data_sheet.pdf
E4MS036120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 36MO 1200V SIC MOSFET IN TO263-7
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+10.71 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
E4MS036120J2-TR Wolfspeed_E4MS036120J2_data_sheet.pdf
E4MS036120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 36MO 1200V SIC MOSFET IN TO263-7
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.56 EUR
10+16.37 EUR
50+13.32 EUR
100+13.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E4MS036120K Wolfspeed_E4MS036120K_data_sheet.pdf
E4MS036120K
Hersteller: Wolfspeed, Inc.
Description: 36MO 1200V SIC MOSFET IN TO247-4
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.97 EUR
30+15.01 EUR
60+13.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E4MS065120U2-TR Wolfspeed_E4MS065120U2_data_sheet.pdf
E4MS065120U2-TR
Hersteller: Wolfspeed, Inc.
Description: 65MO 1200V SIC MOSFET IN TSC(U2)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
E4MS065120U2-TR Wolfspeed_E4MS065120U2_data_sheet.pdf
E4MS065120U2-TR
Hersteller: Wolfspeed, Inc.
Description: 65MO 1200V SIC MOSFET IN TSC(U2)
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.83 EUR
10+9.33 EUR
50+7.41 EUR
100+6.79 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
E6D10065A Wolfspeed_E6D10065A_data_sheet.pdf
E6D10065A
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.48 EUR
10+5.55 EUR
50+4.32 EUR
100+3.93 EUR
250+3.89 EUR
Mindestbestellmenge: 3 Stücke
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E6D10065G 215575
E6D10065G
Hersteller: Wolfspeed, Inc.
Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.16 EUR
10+6.64 EUR
50+5.15 EUR
100+4.68 EUR
250+4.16 EUR
500+3.86 EUR
1000+3.68 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH