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E3M0060065D E3M0060065D Wolfspeed, Inc. Wolfspeed_E3M0060065D_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
auf Bestellung 343 Stücke:
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1+26 EUR
30+16.14 EUR
120+14.12 EUR
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E3M0060065K E3M0060065K Wolfspeed, Inc. wolfspeed_E3M0060065K_data_sheet.pdf Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
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1+26 EUR
30+16.14 EUR
120+14.12 EUR
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E3M0075120D E3M0075120D Wolfspeed, Inc. E3M0075120D.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 515 Stücke:
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1+34.67 EUR
10+30.53 EUR
100+26.41 EUR
500+23.93 EUR
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E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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E3M0075120J2-TR E3M0075120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 498 Stücke:
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1+29.16 EUR
10+20.74 EUR
100+16 EUR
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E3M0075120K E3M0075120K Wolfspeed, Inc. Wolfspeed_E3M0075120K_data_sheet.pdf Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 65 Stücke:
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1+35.75 EUR
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E3M0120090J E3M0120090J Wolfspeed, Inc. Wolfspeed_E3M0120090J_data_sheet.pdf Description: 900V 120M AUTOMOTIVE SIC MOSFET
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 512 Stücke:
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2+16.12 EUR
50+13.52 EUR
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E3M0160120D E3M0160120D Wolfspeed, Inc. Wolfspeed_E3M0160120D_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): -8V, +19V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tray
Produkt ist nicht verfügbar
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E3M0160120J2-TR E3M0160120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0160120J2_data_sheet.pdf Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 773 Stücke:
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2+16.42 EUR
10+11.31 EUR
100+8.41 EUR
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E3M0160120J2-TR E3M0160120J2-TR Wolfspeed, Inc. Wolfspeed_E3M0160120J2_data_sheet.pdf Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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E3M0160120K Wolfspeed, Inc. Description: SIC, MOSFET, 16M, 1200V, TO-247-
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-4L
Power Dissipation (Max): 115W
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
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E3M0900170D E3M0900170D Wolfspeed, Inc. Wolfspeed_E3M0900170D_data_sheet.pdf Description: SIC, MOSFET, 900M, 1700V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.86 EUR
30+5.6 EUR
120+4.66 EUR
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E4D02120E-TR E4D02120E-TR Wolfspeed, Inc. Wolfspeed_E4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 8A TO252-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Cut Tape (CT)
auf Bestellung 2674 Stücke:
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5+3.92 EUR
10+3.26 EUR
100+2.59 EUR
500+2.19 EUR
1000+1.86 EUR
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E4D02120E-TR E4D02120E-TR Wolfspeed, Inc. Wolfspeed_E4D02120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 8A TO252-2
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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E4D10120A E4D10120A Wolfspeed, Inc. Wolfspeed_E4D10120A_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 33A TO220-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 33A
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 386 Stücke:
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1+22.18 EUR
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E4D20120A E4D20120A Wolfspeed, Inc. Wolfspeed_E4D20120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 54.5A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 54.5A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Grade: Automotive
auf Bestellung 253 Stücke:
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1+34.13 EUR
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E4D20120D E4D20120D Wolfspeed, Inc. Wolfspeed_E4D20120D_data_sheet.pdf Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 131 Stücke:
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1+42.82 EUR
30+27.63 EUR
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E4D20120G E4D20120G Wolfspeed, Inc. Wolfspeed_E4D20120G_data_sheet.pdf Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2237 Stücke:
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1+38.44 EUR
50+23.32 EUR
100+21.87 EUR
500+21.8 EUR
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E4M0013120K E4M0013120K Wolfspeed, Inc. Wolfspeed_E4M0013120K_data_sheet.pdf Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 60 Stücke:
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1+144.21 EUR
30+128.79 EUR
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E4M0015075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075J2_data_sheet.pdf Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 105 Stücke:
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1+65.24 EUR
10+53.19 EUR
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E4M0015075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0015075J2_data_sheet.pdf Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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E4M0025075J2-TR E4M0025075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0025075J2_data_sheet.pdf Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 913 Stücke:
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1+29.92 EUR
10+21.41 EUR
100+20.64 EUR
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E4M0025075J2-TR E4M0025075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0025075J2_data_sheet.pdf Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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800+16.86 EUR
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E4M0025075K1 E4M0025075K1 Wolfspeed, Inc. Wolfspeed_E4M0025075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 218 Stücke:
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E4M0045075J2-TR E4M0045075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0045075J2_data_sheet.pdf Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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E4M0045075J2-TR E4M0045075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0045075J2_data_sheet.pdf Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.16 EUR
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E4M0045075K1 E4M0045075K1 Wolfspeed, Inc. Wolfspeed_E4M0045075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 139W 3.8V NC
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.16 EUR
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E4M0060075J2-TR E4M0060075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0060075J2_data_sheet.pdf Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.76 EUR
10+11.6 EUR
100+9.77 EUR
Mindestbestellmenge: 2 Stücke
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E4M0060075J2-TR E4M0060075J2-TR Wolfspeed, Inc. Wolfspeed_E4M0060075J2_data_sheet.pdf Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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E4M0060075K1 E4M0060075K1 Wolfspeed, Inc. Wolfspeed_E4M0060075K1_data_sheet.pdf Description: MOSFETS AUTOMOTIVE 126W 3.8V NC
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 402 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.76 EUR
30+10.01 EUR
120+8.53 EUR
Mindestbestellmenge: 2 Stücke
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E6D10065A E6D10065A Wolfspeed, Inc. Wolfspeed_E6D10065A_data_sheet.pdf Description: SIC, SCHOTTKY DIODE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.13 EUR
10+4.66 EUR
50+3.63 EUR
100+3.3 EUR
250+3.27 EUR
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E6D10065G E6D10065G Wolfspeed, Inc. 215575 Description: WOLFSPEED SIC, SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 32A
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.54 EUR
10+5.58 EUR
50+4.33 EUR
100+3.93 EUR
250+3.5 EUR
500+3.24 EUR
1000+3.09 EUR
Mindestbestellmenge: 3 Stücke
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E6D20065A E6D20065A Wolfspeed, Inc. Wolfspeed_E6D20065A_data_sheet.pdf Description: DIODE SIL CARBIDE 650V 68A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.64 EUR
50+8.04 EUR
100+7.4 EUR
500+6.29 EUR
Mindestbestellmenge: 2 Stücke
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E6D20065D E6D20065D Wolfspeed, Inc. 215559 Description: DIODE ARRAY SIC 650V 34A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.01 EUR
30+8.18 EUR
120+6.91 EUR
Mindestbestellmenge: 2 Stücke
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E6D20065G E6D20065G Wolfspeed, Inc. 215585 Description: DIODE SIL CARB 650V 68A TO2632
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.01 EUR
50+7.66 EUR
100+7.05 EUR
500+5.98 EUR
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E6D20065H E6D20065H Wolfspeed, Inc. Wolfspeed_E6D20065H_data_sheet.pdf Description: DIODE SIL CARB 650V 59A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Bulk
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 59A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.61 EUR
30+9.2 EUR
120+7.79 EUR
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E6D30065D E6D30065D Wolfspeed, Inc. 215564 Description: DIODE SIC 650V 50A TO247
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.18 EUR
10+13.16 EUR
30+11.32 EUR
120+9.63 EUR
270+9.28 EUR
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E6D40065H E6D40065H Wolfspeed, Inc. Wolfspeed_E6D40065H_data_sheet.pdf Description: DIODE SIL CARB 650V 109A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2460pF @ 0V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 320 Stücke:
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1+26.8 EUR
30+16.54 EUR
120+14.29 EUR
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EAB450M12XM3 EAB450M12XM3 Wolfspeed, Inc. Wolfspeed_EAB450M12XM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 450A
Packaging: Box
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+1668.27 EUR
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FXA/WS1A2639V1-05 Wolfspeed, Inc. Description: 38.5 DBM AVG, 48V, 2.495-2.690 G
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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FXL/WS1A2639V1-06 Wolfspeed, Inc. Description: INTEGRATED DRIVER+FINAL STAGE 2.
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GTRA214602FC-V1-R0 Wolfspeed, Inc. GTRA214602FC-V1.pdf Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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GTRA214602FC-V1-R2 Wolfspeed, Inc. GTRA214602FC-V1.pdf Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 250 Stücke
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GTRA262802FC-V2-R0 GTRA262802FC-V2-R0 Wolfspeed, Inc. GTRA262802FC_V2.pdf Description: 280W, GAN HEMT, 48V, 2496-2690MH
Current - Test: 200 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 14dB
Power - Output: 250W
Frequency: 2.49GHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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GTRA262802FC-V2-R2 GTRA262802FC-V2-R2 Wolfspeed, Inc. GTRA262802FC_V2.pdf Description: 280W, GAN HEMT, 48V, 2496-2690MH
Current - Test: 200 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 14dB
Power - Output: 250W
Frequency: 2.49GHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 250 Stücke
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GTRA384802FC-V1-R0 GTRA384802FC-V1-R0 Wolfspeed, Inc. GTRA384802FC-V1.pdf Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Tape & Reel (TR)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
50+387.64 EUR
Mindestbestellmenge: 50 Stücke
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GTRA384802FC-V1-R0 GTRA384802FC-V1-R0 Wolfspeed, Inc. GTRA384802FC-V1.pdf Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Cut Tape (CT)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
1+413.86 EUR
10+396.38 EUR
25+387.64 EUR
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GTRB097152FC-V1-R0 Wolfspeed, Inc. Description: 900W,48V,758-960MHZ,GANHEMT(50PC
Voltage - Rated: 48 V
Part Status: Active
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 18dB
Power - Output: 900W
Frequency: 758MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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GTRB097152FC-V1-R2 Wolfspeed, Inc. Description: 900W,48V,758-960MHZ,GANHEMT(250P
Voltage - Rated: 48 V
Part Status: Active
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 18dB
Power - Output: 900W
Frequency: 758MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 250 Stücke
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GTRB206002FC/1-V1-R0 Wolfspeed, Inc. Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GTRB206002FC/1-V1-R2 Wolfspeed, Inc. Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 250 Stücke
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GTRB246608FC-V1-R0 Wolfspeed, Inc. Description: 500W, 48V, 2300-2400 MHZ, GAN-SI
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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GTRB246608FC-V1-R2 Wolfspeed, Inc. Description: 500W, 48V, 2300-2400 MHZ, GAN-SI
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 250 Stücke
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GTVA107001FC-V1-R0 GTVA107001FC-V1-R0 Wolfspeed, Inc. Wolfspeed_GTVA107001EFC-V1.pdf Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Supplier Device Package: H-37248-2
Technology: HEMT
Gain: 20dB
Power - Output: 700W
Frequency: 1.4GHz
Mounting Type: Surface Mount
Package / Case: H-37248-2
Packaging: Tape & Reel (TR)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 125 V
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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GTVA107001FC-V1-R0 GTVA107001FC-V1-R0 Wolfspeed, Inc. Wolfspeed_GTVA107001EFC-V1.pdf Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 125 V
Part Status: Active
Supplier Device Package: H-37248-2
Technology: HEMT
Gain: 20dB
Power - Output: 700W
Frequency: 1.4GHz
Mounting Type: Surface Mount
Package / Case: H-37248-2
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GTVA261701FA-V1-R0 Wolfspeed, Inc. GTVA261701FA_V1_05.pdf Description: GAN SIC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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HAS175M12BM3 HAS175M12BM3 Wolfspeed, Inc. Wolfspeed_HAS175M12BM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 175A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 175A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+977.56 EUR
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HAS350M12BM3 HAS350M12BM3 Wolfspeed, Inc. Wolfspeed_HAS350M12BM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 350A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 350A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+1640.57 EUR
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HAS530M12BM3 HAS530M12BM3 Wolfspeed, Inc. Wolfspeed_HAS530M12BM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 530A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+1853.58 EUR
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KIT8020-CRD-5FF0917P-2 KIT8020-CRD-5FF0917P-2 Wolfspeed, Inc. KIT8020_CRD_5FF0917P_2_Application_Note.pdf Description: EVAL BOARD FOR CREES SIC MOSFET
Supplied Contents: Board(s)
Utilized IC / Part: C3M0075120K
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Box
Produkt ist nicht verfügbar
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E3M0060065D Wolfspeed_E3M0060065D_data_sheet.pdf
E3M0060065D
Hersteller: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+26 EUR
30+16.14 EUR
120+14.12 EUR
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E3M0060065K wolfspeed_E3M0060065K_data_sheet.pdf
E3M0060065K
Hersteller: Wolfspeed, Inc.
Description: 60M 650V SIC AUTOMOTIVE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+26 EUR
30+16.14 EUR
120+14.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120D E3M0075120D.pdf
E3M0075120D
Hersteller: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+34.67 EUR
10+30.53 EUR
100+26.41 EUR
500+23.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E3M0075120J2-TR Wolfspeed_E3M0075120J2_data_sheet.pdf
E3M0075120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+29.16 EUR
10+20.74 EUR
100+16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120K Wolfspeed_E3M0075120K_data_sheet.pdf
E3M0075120K
Hersteller: Wolfspeed, Inc.
Description: 1200V AUTOMOTIVE SIC 75MOHM FET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+35.75 EUR
30+22.58 EUR
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E3M0120090J Wolfspeed_E3M0120090J_data_sheet.pdf
E3M0120090J
Hersteller: Wolfspeed, Inc.
Description: 900V 120M AUTOMOTIVE SIC MOSFET
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.12 EUR
50+13.52 EUR
Mindestbestellmenge: 2 Stücke
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E3M0160120D Wolfspeed_E3M0160120D_data_sheet.pdf
E3M0160120D
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): -8V, +19V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tray
Produkt ist nicht verfügbar
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E3M0160120J2-TR Wolfspeed_E3M0160120J2_data_sheet.pdf
E3M0160120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.42 EUR
10+11.31 EUR
100+8.41 EUR
Mindestbestellmenge: 2 Stücke
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E3M0160120J2-TR Wolfspeed_E3M0160120J2_data_sheet.pdf
E3M0160120J2-TR
Hersteller: Wolfspeed, Inc.
Description: 160m 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E3M0160120K
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 16M, 1200V, TO-247-
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-4L
Power Dissipation (Max): 115W
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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E3M0900170D Wolfspeed_E3M0900170D_data_sheet.pdf
E3M0900170D
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 900M, 1700V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.86 EUR
30+5.6 EUR
120+4.66 EUR
Mindestbestellmenge: 2 Stücke
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E4D02120E-TR Wolfspeed_E4D02120E_data_sheet.pdf
E4D02120E-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Cut Tape (CT)
auf Bestellung 2674 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.92 EUR
10+3.26 EUR
100+2.59 EUR
500+2.19 EUR
1000+1.86 EUR
Mindestbestellmenge: 5 Stücke
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E4D02120E-TR Wolfspeed_E4D02120E_data_sheet.pdf
E4D02120E-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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E4D10120A Wolfspeed_E4D10120A_data_sheet.pdf
E4D10120A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 33A TO220-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 33A
Capacitance @ Vr, F: 777pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+22.18 EUR
50+13.59 EUR
100+13.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E4D20120A Wolfspeed_E4D20120A_data_sheet.pdf
E4D20120A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 54.5A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Grade: Automotive
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+34.13 EUR
50+26.87 EUR
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E4D20120D Wolfspeed_E4D20120D_data_sheet.pdf
E4D20120D
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 712pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+42.82 EUR
30+27.63 EUR
120+24.99 EUR
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E4D20120G Wolfspeed_E4D20120G_data_sheet.pdf
E4D20120G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+38.44 EUR
50+23.32 EUR
100+21.87 EUR
500+21.8 EUR
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E4M0013120K Wolfspeed_E4M0013120K_data_sheet.pdf
E4M0013120K
Hersteller: Wolfspeed, Inc.
Description: 13M, 1200V, SIC FET TO-247, AUTO
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 23.18mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+144.21 EUR
30+128.79 EUR
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E4M0015075J2-TR Wolfspeed_E4M0015075J2_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+65.24 EUR
10+53.19 EUR
100+47.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E4M0015075J2-TR Wolfspeed_E4M0015075J2_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E4M0025075J2-TR Wolfspeed_E4M0025075J2_data_sheet.pdf
E4M0025075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 913 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+29.92 EUR
10+21.41 EUR
100+20.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E4M0025075J2-TR Wolfspeed_E4M0025075J2_data_sheet.pdf
E4M0025075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 3055 PF 281W 3.8V 114 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 281W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+16.86 EUR
Mindestbestellmenge: 800 Stücke
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E4M0025075K1 Wolfspeed_E4M0025075K1_data_sheet.pdf
E4M0025075K1
Hersteller: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 262W 3.8V NC
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 9.22mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+29.92 EUR
30+18.78 EUR
120+16.86 EUR
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E4M0045075J2-TR Wolfspeed_E4M0045075J2_data_sheet.pdf
E4M0045075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E4M0045075J2-TR Wolfspeed_E4M0045075J2_data_sheet.pdf
E4M0045075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+21.16 EUR
10+14.79 EUR
100+12.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E4M0045075K1 Wolfspeed_E4M0045075K1_data_sheet.pdf
E4M0045075K1
Hersteller: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 139W 3.8V NC
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+21.16 EUR
30+12.82 EUR
120+11 EUR
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E4M0060075J2-TR Wolfspeed_E4M0060075J2_data_sheet.pdf
E4M0060075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.76 EUR
10+11.6 EUR
100+9.77 EUR
Mindestbestellmenge: 2 Stücke
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E4M0060075J2-TR Wolfspeed_E4M0060075J2_data_sheet.pdf
E4M0060075J2-TR
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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E4M0060075K1 Wolfspeed_E4M0060075K1_data_sheet.pdf
E4M0060075K1
Hersteller: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 126W 3.8V NC
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 126W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 402 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.76 EUR
30+10.01 EUR
120+8.53 EUR
Mindestbestellmenge: 2 Stücke
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E6D10065A Wolfspeed_E6D10065A_data_sheet.pdf
E6D10065A
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.13 EUR
10+4.66 EUR
50+3.63 EUR
100+3.3 EUR
250+3.27 EUR
Mindestbestellmenge: 3 Stücke
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E6D10065G 215575
E6D10065G
Hersteller: Wolfspeed, Inc.
Description: WOLFSPEED SIC, SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 32A
Capacitance @ Vr, F: 630pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.54 EUR
10+5.58 EUR
50+4.33 EUR
100+3.93 EUR
250+3.5 EUR
500+3.24 EUR
1000+3.09 EUR
Mindestbestellmenge: 3 Stücke
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E6D20065A Wolfspeed_E6D20065A_data_sheet.pdf
E6D20065A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 68A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.64 EUR
50+8.04 EUR
100+7.4 EUR
500+6.29 EUR
Mindestbestellmenge: 2 Stücke
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E6D20065D 215559
E6D20065D
Hersteller: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 650V 34A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.01 EUR
30+8.18 EUR
120+6.91 EUR
Mindestbestellmenge: 2 Stücke
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E6D20065G 215585
E6D20065G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 68A TO2632
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.01 EUR
50+7.66 EUR
100+7.05 EUR
500+5.98 EUR
Mindestbestellmenge: 2 Stücke
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E6D20065H Wolfspeed_E6D20065H_data_sheet.pdf
E6D20065H
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 59A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Bulk
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 59A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+15.61 EUR
30+9.2 EUR
120+7.79 EUR
Mindestbestellmenge: 2 Stücke
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E6D30065D 215564
E6D30065D
Hersteller: Wolfspeed, Inc.
Description: DIODE SIC 650V 50A TO247
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 50A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+19.18 EUR
10+13.16 EUR
30+11.32 EUR
120+9.63 EUR
270+9.28 EUR
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E6D40065H Wolfspeed_E6D40065H_data_sheet.pdf
E6D40065H
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 109A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2460pF @ 0V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+26.8 EUR
30+16.54 EUR
120+14.29 EUR
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EAB450M12XM3 Wolfspeed_EAB450M12XM3_data_sheet.pdf
EAB450M12XM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Box
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+1668.27 EUR
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FXA/WS1A2639V1-05
Hersteller: Wolfspeed, Inc.
Description: 38.5 DBM AVG, 48V, 2.495-2.690 G
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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FXL/WS1A2639V1-06
Hersteller: Wolfspeed, Inc.
Description: INTEGRATED DRIVER+FINAL STAGE 2.
Packaging: Bulk
For Use With/Related Products: WS1A2639
Frequency: 2.5GHz ~ 2.69GHz
Type: Power Amplifier
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GTRA214602FC-V1-R0 GTRA214602FC-V1.pdf
Hersteller: Wolfspeed, Inc.
Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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GTRA214602FC-V1-R2 GTRA214602FC-V1.pdf
Hersteller: Wolfspeed, Inc.
Description: 490W, GAN HEMT, 48V, 2110-2200MH
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 2.11GHz ~ 2.17GHz
Power - Output: 490W
Gain: 14.4dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 150 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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GTRA262802FC-V2-R0 GTRA262802FC_V2.pdf
GTRA262802FC-V2-R0
Hersteller: Wolfspeed, Inc.
Description: 280W, GAN HEMT, 48V, 2496-2690MH
Current - Test: 200 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 14dB
Power - Output: 250W
Frequency: 2.49GHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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GTRA262802FC-V2-R2 GTRA262802FC_V2.pdf
GTRA262802FC-V2-R2
Hersteller: Wolfspeed, Inc.
Description: 280W, GAN HEMT, 48V, 2496-2690MH
Current - Test: 200 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 14dB
Power - Output: 250W
Frequency: 2.49GHz ~ 2.69GHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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GTRA384802FC-V1-R0 GTRA384802FC-V1.pdf
GTRA384802FC-V1-R0
Hersteller: Wolfspeed, Inc.
Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Tape & Reel (TR)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+387.64 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GTRA384802FC-V1-R0 GTRA384802FC-V1.pdf
GTRA384802FC-V1-R0
Hersteller: Wolfspeed, Inc.
Description: GAN HEMT 48V 480W 3800MHZ
Packaging: Cut Tape (CT)
Frequency: 3.6GHz ~ 3.8GHz
Power - Output: 63W
Gain: 13.7dB
Technology: HEMT
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 250 mA
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+413.86 EUR
10+396.38 EUR
25+387.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GTRB097152FC-V1-R0
Hersteller: Wolfspeed, Inc.
Description: 900W,48V,758-960MHZ,GANHEMT(50PC
Voltage - Rated: 48 V
Part Status: Active
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 18dB
Power - Output: 900W
Frequency: 758MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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GTRB097152FC-V1-R2
Hersteller: Wolfspeed, Inc.
Description: 900W,48V,758-960MHZ,GANHEMT(250P
Voltage - Rated: 48 V
Part Status: Active
Supplier Device Package: H-37248C-4
Technology: HEMT
Gain: 18dB
Power - Output: 900W
Frequency: 758MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: H-37248C-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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GTRB206002FC/1-V1-R0
Hersteller: Wolfspeed, Inc.
Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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GTRB206002FC/1-V1-R2
Hersteller: Wolfspeed, Inc.
Description: RF MOSFET HEMT H-37248C-4
Packaging: Tape & Reel (TR)
Package / Case: H-37248C-4
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 2.02GHz
Power - Output: 500W
Gain: 14.8dB
Technology: HEMT
Supplier Device Package: H-37248C-4
Voltage - Rated: 48 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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GTRB246608FC-V1-R0
Hersteller: Wolfspeed, Inc.
Description: 500W, 48V, 2300-2400 MHZ, GAN-SI
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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GTRB246608FC-V1-R2
Hersteller: Wolfspeed, Inc.
Description: 500W, 48V, 2300-2400 MHZ, GAN-SI
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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GTVA107001FC-V1-R0 Wolfspeed_GTVA107001EFC-V1.pdf
GTVA107001FC-V1-R0
Hersteller: Wolfspeed, Inc.
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Supplier Device Package: H-37248-2
Technology: HEMT
Gain: 20dB
Power - Output: 700W
Frequency: 1.4GHz
Mounting Type: Surface Mount
Package / Case: H-37248-2
Packaging: Tape & Reel (TR)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 125 V
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GTVA107001FC-V1-R0 Wolfspeed_GTVA107001EFC-V1.pdf
GTVA107001FC-V1-R0
Hersteller: Wolfspeed, Inc.
Description: 700W GAN HEMT, 50V, 0.9-1.2GHZ
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 125 V
Part Status: Active
Supplier Device Package: H-37248-2
Technology: HEMT
Gain: 20dB
Power - Output: 700W
Frequency: 1.4GHz
Mounting Type: Surface Mount
Package / Case: H-37248-2
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GTVA261701FA-V1-R0 GTVA261701FA_V1_05.pdf
Hersteller: Wolfspeed, Inc.
Description: GAN SIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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HAS175M12BM3 Wolfspeed_HAS175M12BM3_data_sheet.pdf
HAS175M12BM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 175A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 175A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+977.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HAS350M12BM3 Wolfspeed_HAS350M12BM3_data_sheet.pdf
HAS350M12BM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 350A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 350A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+1640.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HAS530M12BM3 Wolfspeed_HAS530M12BM3_data_sheet.pdf
HAS530M12BM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A
FET Feature: Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+1853.58 EUR
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KIT8020-CRD-5FF0917P-2 KIT8020_CRD_5FF0917P_2_Application_Note.pdf
KIT8020-CRD-5FF0917P-2
Hersteller: Wolfspeed, Inc.
Description: EVAL BOARD FOR CREES SIC MOSFET
Supplied Contents: Board(s)
Utilized IC / Part: C3M0075120K
Type: Power Management
Function: Half H-Bridge Driver (External FET)
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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