Produkte > WOLFSPEED, INC. > Alle Produkte des Herstellers WOLFSPEED, INC. (600) > Seite 5 nach 10
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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C6D20065D | Wolfspeed, Inc. |
Description: DIODE ARR SIC 650V 64A TO247-3Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 64A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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C6D20065D1 | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 64A, 650V,Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
auf Bestellung 885 Stücke: Lieferzeit 10-14 Tag (e) |
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C6D20065G | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE, 64A, 650V,Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-2 Current - Average Rectified (Io): 64A Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
auf Bestellung 974 Stücke: Lieferzeit 10-14 Tag (e) |
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C6D20065G-TR | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE,64A, 650V, TPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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C6D20065G-TR | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE,64A, 650V, TPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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C6D20065H | Wolfspeed, Inc. |
Description: SIC, SCHOTTKY DIODE,64A, 650V, TPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 64A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A |
auf Bestellung 578 Stücke: Lieferzeit 10-14 Tag (e) |
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C6D25170H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1700V 83A TO2472Current - Reverse Leakage @ Vr: 45 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Voltage - DC Reverse (Vr) (Max): 1700 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 83A Capacitance @ Vr, F: 3108pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| C6D30065A | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO220 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| C6D30065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 50A TO247 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| C6D30065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 95A TO263 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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C6D30065H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 88A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Supplier Device Package: TO-247-2 Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1851pF @ 0V, 1MHz Current - Average Rectified (Io): 88A Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 45 µA @ 650 V |
auf Bestellung 211 Stücke: Lieferzeit 10-14 Tag (e) |
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| C6D40065A | Wolfspeed, Inc. |
Description: WOLFSPEED SIC, SCHOTTKY DIODE Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| C6D40065D | Wolfspeed, Inc. |
Description: DIODE SIC 650V 63A TO247 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| C6D40065G | Wolfspeed, Inc. |
Description: DIODE SIC 650V 131A TO263 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| C6D40065H | Wolfspeed, Inc. |
Description: DIODE SIC 650V TO247 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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C6D50065D1 | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 136A TO2473Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 437 Stücke: Lieferzeit 10-14 Tag (e) |
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C6D50065H | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 136A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2819pF @ 0V, 1MHz Current - Average Rectified (Io): 136A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 1353 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB004M12GM4 | Wolfspeed, Inc. |
Description: SIC, MODULE, 4M, 1200V, 48 MM, GPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 584W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V Vgs(th) (Max) @ Id: 4V @ 75mA |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB006A12GM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 200APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Part Status: Active |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB006A12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 200A MODULESupplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 69mA Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAB006M12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200VRds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Part Status: Active Vgs(th) (Max) @ Id: 3.6V @ 69mA Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAB006M12GM3T | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 200A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 3.6V @ 69mA Supplier Device Package: Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAB008A12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 182APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 182A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Part Status: Active |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB008M12GM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200VPart Status: Active Vgs(th) (Max) @ Id: 3.6V @ 46mA Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAB008M12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 146A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 46mA Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Current - Continuous Drain (Id) @ 25°C: 146A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB011A12GM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 141A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 141A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 34mA Supplier Device Package: Module |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB011A12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 141A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 141A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 34mA Supplier Device Package: Module |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB011M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 105APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Part Status: Active |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB011M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 105A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 35mA Supplier Device Package: Module |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB016M12FM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 78APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB016M12FM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 78A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB320M17XM3 | Wolfspeed, Inc. |
Description: SIC 1700V 320A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB400M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 395APart Status: Active Vgs(th) (Max) @ Id: 3.6V @ 92mA Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V Current - Continuous Drain (Id) @ 25°C: 395A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB425M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 450APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 115mA Part Status: Active |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB450M12XM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 450A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 850W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 132mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 208 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB500M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 653A MODULETechnology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 203mA Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V Current - Continuous Drain (Id) @ 25°C: 653A (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 530A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 140mA Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V Current - Continuous Drain (Id) @ 25°C: 530A Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB5R0A23GM4 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 710W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4V @ 114mA |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB650M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 916A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 916A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 305mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB6R0A23GM4 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAB6R0A23GM4T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAB760M12HM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 1015A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 280mA Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Current - Continuous Drain (Id) @ 25°C: 1015A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB760M12HM3R | Wolfspeed, Inc. |
Description: 760A 1200V SIC HALF-BRIDGE MODULPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 280mA Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 50mW Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB7R5A23GM4 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 510W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V Vgs(th) (Max) @ Id: 4V @ 76mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAB7R5A23GM4T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 2300V 150APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 510W Drain to Source Voltage (Vdss): 2300V (2.3kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V Vgs(th) (Max) @ Id: 4V @ 76mA |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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CAR600M12HN6 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 908A MODULESupplier Device Package: Module Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V Current - Continuous Drain (Id) @ 25°C: 908A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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CAS120M12BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 193A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 925W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 193A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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CAS175M12BM3 | Wolfspeed, Inc. |
Description: 175A 1200V SIC HALF-BRIDGE MODULPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 43mA Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAS300M12BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 423A MODULEPackaging: Bulk Package / Case: Module, Screw Terminals Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1660W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 423A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAS300M12BM2T | Wolfspeed, Inc. |
Description: SIC, MODULE, 300A, 1200V, 62MM,Packaging: Box |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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CAS300M17BM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 325A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1760W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 325A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Supplier Device Package: Module Part Status: Not For New Designs |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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CAS310M17BM3 | Wolfspeed, Inc. |
Description: SIC 1700V 310ACurrent - Continuous Drain (Id) @ 25°C: 310A Drain to Source Voltage (Vdss): 1700V (1.7kV) Technology: Silicon Carbide (SiC) Mounting Type: Chassis Mount Package / Case: Module Part Status: Active Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| CAS325M12HM2 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 444A MODULE Packaging: Bulk Package / Case: Module Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3000W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 444A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V Vgs(th) (Max) @ Id: 4V @ 105mA Supplier Device Package: Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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CAS350M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 417APart Status: Active Vgs(th) (Max) @ Id: 3.6V @ 85mA Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V Current - Continuous Drain (Id) @ 25°C: 417A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAS380M17HM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1700V 532A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 532A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 152mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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CAS480M12HM3 | Wolfspeed, Inc. |
Description: 1.2 KV, 480A HIGH PERFORMANCE SI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CAS530M12BM3 | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 630APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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CAS530M12BM3T | Wolfspeed, Inc. |
Description: SIC, MODULE, 530A, 1200V, 62MM,Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2000W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 645A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CBB011M12GM4T | Wolfspeed, Inc. |
Description: SIC, MODULE, 11M, 1200V, 48 MM,Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 292W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V Vgs(th) (Max) @ Id: 4V @ 28mA |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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CBB017M12FM4 | Wolfspeed, Inc. |
Description: SIC, MODULE, 17 M, 1200 V, 33.8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 168W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Vgs(th) (Max) @ Id: 4V @ 19mA |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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| C6D20065D |
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Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 64A TO247-3
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 64A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARR SIC 650V 64A TO247-3
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 64A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.31 EUR |
| 30+ | 13.02 EUR |
| 120+ | 11.65 EUR |
| C6D20065D1 |
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Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.66 EUR |
| 30+ | 14.1 EUR |
| 120+ | 12.61 EUR |
| 510+ | 11.13 EUR |
| C6D20065G |
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Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 64A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 64A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.66 EUR |
| 50+ | 14.1 EUR |
| 100+ | 12.61 EUR |
| 500+ | 11.13 EUR |
| C6D20065G-TR |
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Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.92 EUR |
| 10+ | 14.51 EUR |
| 100+ | 12.09 EUR |
| C6D20065G-TR |
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Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 10.66 EUR |
| C6D20065H |
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Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.92 EUR |
| 30+ | 13.51 EUR |
| 120+ | 12.09 EUR |
| 510+ | 10.66 EUR |
| C6D25170H |
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Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 83A TO2472
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 83A
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 1700V 83A TO2472
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 83A
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| C6D30065H |
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Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 88A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: TO-247-2
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1851pF @ 0V, 1MHz
Current - Average Rectified (Io): 88A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
Description: DIODE SIL CARB 650V 88A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: TO-247-2
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1851pF @ 0V, 1MHz
Current - Average Rectified (Io): 88A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.18 EUR |
| 30+ | 13.38 EUR |
| 120+ | 11.45 EUR |
| C6D50065D1 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.24 EUR |
| 30+ | 22.88 EUR |
| 120+ | 20.36 EUR |
| C6D50065H |
![]() |
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 136A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.59 EUR |
| 30+ | 22.88 EUR |
| 120+ | 20.36 EUR |
| CAB004M12GM4 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 450.43 EUR |
| CAB006A12GM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 444.29 EUR |
| CAB006A12GM3T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 200A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAB006M12GM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Description: SIC 2N-CH 1200V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAB006M12GM3T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAB008A12GM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 625.98 EUR |
| 18+ | 586.29 EUR |
| CAB008M12GM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SIC 2N-CH 1200V
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAB008M12GM3T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 146A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 146A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 302.22 EUR |
| 18+ | 258.61 EUR |
| CAB011A12GM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 309.4 EUR |
| 18+ | 261.06 EUR |
| CAB011A12GM3T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 282.7 EUR |
| CAB011M12FM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 212.86 EUR |
| 18+ | 171.57 EUR |
| CAB011M12FM3T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 220.57 EUR |
| 18+ | 178.98 EUR |
| CAB016M12FM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 179.1 EUR |
| 18+ | 139.88 EUR |
| CAB016M12FM3T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 283.93 EUR |
| 18+ | 250.57 EUR |
| CAB320M17XM3 |
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Hersteller: Wolfspeed, Inc.
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 2208.02 EUR |
| CAB400M12XM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 395A
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 395A
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1291.95 EUR |
| CAB425M12XM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1340.88 EUR |
| CAB450M12XM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1663.64 EUR |
| CAB500M17HM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 653A MODULE
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Description: MOSFET 2N-CH 1700V 653A MODULE
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5638.9 EUR |
| CAB530M12BM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V 530A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 530A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1671.06 EUR |
| CAB5R0A23GM4 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 791.18 EUR |
| CAB650M17HM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 916A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 916A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7542.46 EUR |
| CAB6R0A23GM4 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Description: MOSFET 2N-CH 2300V 150A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAB6R0A23GM4T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Description: MOSFET 2N-CH 2300V 150A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAB760M12HM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 1015A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Description: SIC 2N-CH 1200V 1015A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5399.53 EUR |
| CAB760M12HM3R |
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Hersteller: Wolfspeed, Inc.
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 50mW
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 50mW
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5907.59 EUR |
| CAB7R5A23GM4 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAB7R5A23GM4T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 459.28 EUR |
| CAR600M12HN6 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 908A MODULE
Supplier Device Package: Module
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: MOSFET 2N-CH 1200V 908A MODULE
Supplier Device Package: Module
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4449.26 EUR |
| CAS120M12BM2 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 193A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 925W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 193A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 925W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6470pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 903.26 EUR |
| CAS175M12BM3 |
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Hersteller: Wolfspeed, Inc.
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAS300M12BM2 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1200V 423A MODULE
Packaging: Bulk
Package / Case: Module, Screw Terminals
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1660W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 800V
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1632.94 EUR |
| CAS300M12BM2T |
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Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAS300M17BM2 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1796.8 EUR |
| CAS310M17BM3 |
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Hersteller: Wolfspeed, Inc.
Description: SIC 1700V 310A
Current - Continuous Drain (Id) @ 25°C: 310A
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Technology: Silicon Carbide (SiC)
Mounting Type: Chassis Mount
Package / Case: Module
Part Status: Active
Packaging: Box
Description: SIC 1700V 310A
Current - Continuous Drain (Id) @ 25°C: 310A
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Technology: Silicon Carbide (SiC)
Mounting Type: Chassis Mount
Package / Case: Module
Part Status: Active
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAS325M12HM2 |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 444A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3000W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 444A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3000W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 19500pF @ 1000V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAS350M12BM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 417A
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 417A
Part Status: Active
Vgs(th) (Max) @ Id: 3.6V @ 85mA
Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAS380M17HM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 532A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 152mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6564.84 EUR |
| CAS480M12HM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
Description: 1.2 KV, 480A HIGH PERFORMANCE SI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAS530M12BM3 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1034.63 EUR |
| CAS530M12BM3T |
![]() |
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 530A, 1200V, 62MM,
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2000W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 645A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Description: SIC, MODULE, 530A, 1200V, 62MM,
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2000W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 645A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CBB011M12GM4T |
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Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 11M, 1200V, 48 MM,
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 292W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 28mA
Description: SIC, MODULE, 11M, 1200V, 48 MM,
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 292W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10.1pF @ 800V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 405nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 28mA
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 412.35 EUR |
| 18+ | 371.73 EUR |
| CBB017M12FM4 |
![]() |
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
Description: SIC, MODULE, 17 M, 1200 V, 33.8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 168W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 800V
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 19mA
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 280.23 EUR |
| 18+ | 228.9 EUR |






















