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C6D10065G-TR C6D10065G-TR Wolfspeed, Inc. Wolfspeed_C6D10065G_data_sheet.pdf Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065Q-TR C6D10065Q-TR Wolfspeed, Inc. Wolfspeed_C6D10065Q.pdf Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 1839 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.34 EUR
10+6.89 EUR
50+5.4 EUR
100+4.93 EUR
500+4.39 EUR
Mindestbestellmenge: 3 Stücke
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C6D10065Q-TR C6D10065Q-TR Wolfspeed, Inc. Wolfspeed_C6D10065Q.pdf Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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C6D10170H C6D10170H Wolfspeed, Inc. Wolfspeed_C6D10170H_Data_Sheet.pdf Description: DIODE SIL CARB 1700V 40A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1227pF @ 0V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1700 V
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.94 EUR
30+22.42 EUR
60+20.82 EUR
120+19.47 EUR
510+18.4 EUR
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C6D16065D C6D16065D Wolfspeed, Inc. Wolfspeed_C6D16065D_data_sheet.pdf Description: DIODE ARRAY SIC 650V 32A TO247-3
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.1 EUR
30+8.73 EUR
120+7.33 EUR
Mindestbestellmenge: 2 Stücke
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C6D20065A C6D20065A Wolfspeed, Inc. Wolfspeed_C6D20065A_data_sheet.pdf Description: DIODE SIL CARB 650V 66A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1153pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.39 EUR
50+9.54 EUR
100+8.78 EUR
Mindestbestellmenge: 2 Stücke
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C6D20065D C6D20065D Wolfspeed, Inc. Wolfspeed_C6D20065D_data_sheet.pdf Description: DIODE ARR SIC 650V 64A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.31 EUR
30+13.02 EUR
120+11.65 EUR
Mindestbestellmenge: 2 Stücke
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C6D20065D1 C6D20065D1 Wolfspeed, Inc. Wolfspeed_C6D20065D1_data_sheet.pdf Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.66 EUR
30+14.1 EUR
120+12.61 EUR
510+11.13 EUR
Mindestbestellmenge: 2 Stücke
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C6D20065G C6D20065G Wolfspeed, Inc. Wolfspeed_C6D20065G_data_sheet.pdf Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.66 EUR
50+14.1 EUR
100+12.61 EUR
500+11.13 EUR
Mindestbestellmenge: 2 Stücke
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C6D20065G-TR C6D20065G-TR Wolfspeed, Inc. Wolfspeed_C6D20065G_data_sheet.pdf Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+10.66 EUR
Mindestbestellmenge: 800 Stücke
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C6D20065G-TR C6D20065G-TR Wolfspeed, Inc. Wolfspeed_C6D20065G_data_sheet.pdf Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.92 EUR
10+14.51 EUR
100+12.09 EUR
Mindestbestellmenge: 2 Stücke
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C6D20065H C6D20065H Wolfspeed, Inc. Wolfspeed_C6D20065H_data_sheet.pdf Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.92 EUR
30+13.51 EUR
120+12.09 EUR
510+10.66 EUR
Mindestbestellmenge: 2 Stücke
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C6D25170H C6D25170H Wolfspeed, Inc. Wolfspeed_C6D25170H_Data_Sheet.pdf Description: DIODE SIL CARB 1700V 83A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Current - Average Rectified (Io): 83A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D30065A Wolfspeed, Inc. Description: DIODE SIC 650V TO220
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D30065D Wolfspeed, Inc. Description: DIODE SIC 650V 50A TO247
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D30065G Wolfspeed, Inc. Description: DIODE SIC 650V 95A TO263
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D30065H C6D30065H Wolfspeed, Inc. Wolfspeed_C6D30065H_data_sheet.pdf Description: DIODE SIL CARB 650V 88A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1851pF @ 0V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.18 EUR
30+13.38 EUR
120+11.45 EUR
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C6D40065A Wolfspeed, Inc. Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Tube
Produkt ist nicht verfügbar
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C6D40065D Wolfspeed, Inc. Description: DIODE SIC 650V 63A TO247
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D40065G Wolfspeed, Inc. Description: DIODE SIC 650V 131A TO263
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D40065H Wolfspeed, Inc. Description: DIODE SIC 650V TO247
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D50065D1 C6D50065D1 Wolfspeed, Inc. Wolfspeed_C6D50065D1_data_sheet.pdf Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.24 EUR
30+22.88 EUR
120+20.36 EUR
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C6D50065H C6D50065H Wolfspeed, Inc. Wolfspeed_C6D50065H_data_sheet.pdf Description: DIODE SIL CARB 650V 136A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.68 EUR
30+22.93 EUR
60+21.3 EUR
120+19.93 EUR
510+18.9 EUR
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CAB004A12GM4T CAB004A12GM4T Wolfspeed, Inc. Wolfspeed_CAB004A12GM4_data_sheet.pdf Description: SIC, MODULE, 4M, 1200V, 48 MM, A
Produkt ist nicht verfügbar
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CAB004M12GM4 CAB004M12GM4 Wolfspeed, Inc. Wolfspeed_CAB004M12GM4_data_sheet.pdf Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+450.43 EUR
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CAB004M12GM4T CAB004M12GM4T Wolfspeed, Inc. Wolfspeed_CAB004M12GM4_data_sheet.pdf Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Produkt ist nicht verfügbar
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CAB006A12GM3 CAB006A12GM3 Wolfspeed, Inc. Wolfspeed_CAB006A12GM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+444.29 EUR
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CAB006A12GM3T CAB006A12GM3T Wolfspeed, Inc. Wolfspeed_CAB006A12GM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
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CAB006A12GM4T CAB006A12GM4T Wolfspeed, Inc. Wolfspeed_CAB006A12GM4_data_sheet.pdf Description: SIC, MODULE, 6M, 1200V, 48 MM, A
Produkt ist nicht verfügbar
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CAB006M12GM3 CAB006M12GM3 Wolfspeed, Inc. Wolfspeed_CAB006M12GM3_data_sheet.pdf Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAB006M12GM3T CAB006M12GM3T Wolfspeed, Inc. CAB006M12GM3.pdf Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
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CAB008A12FM4T Wolfspeed, Inc. Description: SIC, MODULE, 8M, 1200V, 33.8 MM,
Produkt ist nicht verfügbar
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CAB008A12GM3 CAB008A12GM3 Wolfspeed, Inc. Wolfspeed_CAB008A12GM3_data_sheet.pdf Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
1+625.98 EUR
18+586.29 EUR
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CAB008M12FM4T Wolfspeed, Inc. wolfspeed_power_line_card.pdf Description: SIC, MODULE, 8M, 1200V, 33.8 MM,
Produkt ist nicht verfügbar
 Mindestbestellmenge: 18 Stücke
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CAB008M12GM3 CAB008M12GM3 Wolfspeed, Inc. Wolfspeed_CAB008M12GM3_data_sheet.pdf Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAB008M12GM3T CAB008M12GM3T Wolfspeed, Inc. Wolfspeed_CAB008M12GM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 146A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
1+302.22 EUR
18+258.61 EUR
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CAB011A12GM3 CAB011A12GM3 Wolfspeed, Inc. Wolfspeed_CAB011A12GM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
1+315.79 EUR
18+266.46 EUR
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CAB011A12GM3T CAB011A12GM3T Wolfspeed, Inc. Wolfspeed_CAB011A12GM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+282.7 EUR
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CAB011M12FM3 CAB011M12FM3 Wolfspeed, Inc. Wolfspeed_CAB011M12FM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
1+221.4 EUR
18+175.12 EUR
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CAB011M12FM3T CAB011M12FM3T Wolfspeed, Inc. Wolfspeed_CAB011M12FM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
1+229.4 EUR
18+182.68 EUR
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CAB016M12FM3 CAB016M12FM3 Wolfspeed, Inc. Wolfspeed_CAB016M12FM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
auf Bestellung 42 Stücke:
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CAB016M12FM3T CAB016M12FM3T Wolfspeed, Inc. Wolfspeed_CAB016M12FM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
1+283.93 EUR
18+250.57 EUR
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CAB320M17XM3 CAB320M17XM3 Wolfspeed, Inc. Wolfspeed_CAB320M17XM3_Data_Sheet.pdf Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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CAB400M12XM3 CAB400M12XM3 Wolfspeed, Inc. Wolfspeed_CAB400M12XM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 395A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+1291.95 EUR
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CAB425M12XM3 CAB425M12XM3 Wolfspeed, Inc. Wolfspeed_CAB425M12XM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
auf Bestellung 5 Stücke:
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1+1340.88 EUR
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CAB450M12XM3 CAB450M12XM3 Wolfspeed, Inc. Wolfspeed_CAB450M12XM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
1+1769.93 EUR
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CAB500M17HM3 CAB500M17HM3 Wolfspeed, Inc. Wolfspeed_CAB500M17HM3_data_sheet.pdf Description: MOSFET 2N-CH 1700V 653A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Supplier Device Package: Module
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+5638.9 EUR
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CAB530M12BM3 CAB530M12BM3 Wolfspeed, Inc. Wolfspeed_CAB530M12BM3_data_sheet.pdf Description: MOSFET 2N-CH 1200V 530A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+1671.06 EUR
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CAB5R0A23GM4 CAB5R0A23GM4 Wolfspeed, Inc. Wolfspeed_CAB5R0A23GM4_data_sheet.pdf Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+791.18 EUR
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CAB5R0A23GM4T CAB5R0A23GM4T Wolfspeed, Inc. Wolfspeed_CAB5R0A23GM4_data_sheet.pdf Description: MOSFET 2N-CH 2300V 150A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 18 Stücke
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CAB650M17HM3 CAB650M17HM3 Wolfspeed, Inc. Wolfspeed_CAB650M17HM3_data_sheet.pdf Description: MOSFET 2N-CH 1700V 916A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+7542.46 EUR
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CAB6R0A23GM4 CAB6R0A23GM4 Wolfspeed, Inc. Wolfspeed_CAB6R0A23GM4_data_sheet.pdf Description: MOSFET 2N-CH 2300V 150A
Produkt ist nicht verfügbar
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CAB6R0A23GM4T CAB6R0A23GM4T Wolfspeed, Inc. Wolfspeed_CAB6R0A23GM4_data_sheet.pdf Description: MOSFET 2N-CH 2300V 150A
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
1+600.49 EUR
18+558.3 EUR
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CAB760M12HM3 CAB760M12HM3 Wolfspeed, Inc. CAB760M12HM3.pdf Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
1+5399.53 EUR
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CAB760M12HM3R CAB760M12HM3R Wolfspeed, Inc. Wolfspeed_CAB760M12HM3R.pdf Description: 760A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+5907.59 EUR
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CAB7R5A23GM4 CAB7R5A23GM4 Wolfspeed, Inc. Wolfspeed_CAB7R5A23GM4_data_sheet.pdf Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Produkt ist nicht verfügbar
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CAB7R5A23GM4T CAB7R5A23GM4T Wolfspeed, Inc. Wolfspeed_CAB7R5A23GM4_data_sheet.pdf Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+491.33 EUR
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CAR600M12HN6 CAR600M12HN6 Wolfspeed, Inc. Wolfspeed_CAR600M12HN6_data_sheet.pdf Description: MOSFET 2N-CH 1200V 908A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Supplier Device Package: Module
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+4449.26 EUR
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CAS120M12BM2 CAS120M12BM2 Wolfspeed, Inc. Wolfspeed_CAS120M12BM2_data_sheet.pdf Description: MOSFET 2N-CH 1200V 193A MODULE
Produkt ist nicht verfügbar
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CAS175M12BM3 CAS175M12BM3 Wolfspeed, Inc. wolfspeed_CAS175M12BM3_data_sheet.pdf Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065G-TR Wolfspeed_C6D10065G_data_sheet.pdf
C6D10065G-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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C6D10065Q-TR Wolfspeed_C6D10065Q.pdf
C6D10065Q-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 1839 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.34 EUR
10+6.89 EUR
50+5.4 EUR
100+4.93 EUR
500+4.39 EUR
Mindestbestellmenge: 3 Stücke
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C6D10065Q-TR Wolfspeed_C6D10065Q.pdf
C6D10065Q-TR
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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C6D10170H Wolfspeed_C6D10170H_Data_Sheet.pdf
C6D10170H
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 40A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1227pF @ 0V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1700 V
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.94 EUR
30+22.42 EUR
60+20.82 EUR
120+19.47 EUR
510+18.4 EUR
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C6D16065D Wolfspeed_C6D16065D_data_sheet.pdf
C6D16065D
Hersteller: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 650V 32A TO247-3
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.1 EUR
30+8.73 EUR
120+7.33 EUR
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C6D20065A Wolfspeed_C6D20065A_data_sheet.pdf
C6D20065A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 66A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1153pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.39 EUR
50+9.54 EUR
100+8.78 EUR
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C6D20065D Wolfspeed_C6D20065D_data_sheet.pdf
C6D20065D
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 650V 64A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.31 EUR
30+13.02 EUR
120+11.65 EUR
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C6D20065D1 Wolfspeed_C6D20065D1_data_sheet.pdf
C6D20065D1
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.66 EUR
30+14.1 EUR
120+12.61 EUR
510+11.13 EUR
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C6D20065G Wolfspeed_C6D20065G_data_sheet.pdf
C6D20065G
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 64A, 650V,
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.66 EUR
50+14.1 EUR
100+12.61 EUR
500+11.13 EUR
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C6D20065G-TR Wolfspeed_C6D20065G_data_sheet.pdf
C6D20065G-TR
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+10.66 EUR
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C6D20065G-TR Wolfspeed_C6D20065G_data_sheet.pdf
C6D20065G-TR
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.92 EUR
10+14.51 EUR
100+12.09 EUR
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C6D20065H Wolfspeed_C6D20065H_data_sheet.pdf
C6D20065H
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE,64A, 650V, T
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 64A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.92 EUR
30+13.51 EUR
120+12.09 EUR
510+10.66 EUR
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C6D25170H Wolfspeed_C6D25170H_Data_Sheet.pdf
C6D25170H
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 83A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3108pF @ 0V, 1MHz
Current - Average Rectified (Io): 83A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 45 µA @ 1700 V
Produkt ist nicht verfügbar
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C6D30065A
Hersteller: Wolfspeed, Inc.
Description: DIODE SIC 650V TO220
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D30065D
Hersteller: Wolfspeed, Inc.
Description: DIODE SIC 650V 50A TO247
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D30065G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIC 650V 95A TO263
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D30065H Wolfspeed_C6D30065H_data_sheet.pdf
C6D30065H
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 88A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1851pF @ 0V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.18 EUR
30+13.38 EUR
120+11.45 EUR
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C6D40065A
Hersteller: Wolfspeed, Inc.
Description: WOLFSPEED SIC, SCHOTTKY DIODE
Packaging: Tube
Produkt ist nicht verfügbar
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C6D40065D
Hersteller: Wolfspeed, Inc.
Description: DIODE SIC 650V 63A TO247
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D40065G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIC 650V 131A TO263
Packaging: Bulk
Produkt ist nicht verfügbar
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C6D40065H
Hersteller: Wolfspeed, Inc.
Description: DIODE SIC 650V TO247
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D50065D1 Wolfspeed_C6D50065D1_data_sheet.pdf
C6D50065D1
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.24 EUR
30+22.88 EUR
120+20.36 EUR
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C6D50065H Wolfspeed_C6D50065H_data_sheet.pdf
C6D50065H
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 136A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2819pF @ 0V, 1MHz
Current - Average Rectified (Io): 136A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.68 EUR
30+22.93 EUR
60+21.3 EUR
120+19.93 EUR
510+18.9 EUR
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CAB004A12GM4T Wolfspeed_CAB004A12GM4_data_sheet.pdf
CAB004A12GM4T
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 4M, 1200V, 48 MM, A
Produkt ist nicht verfügbar
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CAB004M12GM4 Wolfspeed_CAB004M12GM4_data_sheet.pdf
CAB004M12GM4
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 584W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 26.4pF @ 800V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1144nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 75mA
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+450.43 EUR
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CAB004M12GM4T Wolfspeed_CAB004M12GM4_data_sheet.pdf
CAB004M12GM4T
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 4M, 1200V, 48 MM, G
Produkt ist nicht verfügbar
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CAB006A12GM3 Wolfspeed_CAB006A12GM3_data_sheet.pdf
CAB006A12GM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+444.29 EUR
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CAB006A12GM3T Wolfspeed_CAB006A12GM3_data_sheet.pdf
CAB006A12GM3T
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
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CAB006A12GM4T Wolfspeed_CAB006A12GM4_data_sheet.pdf
CAB006A12GM4T
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 6M, 1200V, 48 MM, A
Produkt ist nicht verfügbar
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CAB006M12GM3 Wolfspeed_CAB006M12GM3_data_sheet.pdf
CAB006M12GM3
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAB006M12GM3T CAB006M12GM3.pdf
CAB006M12GM3T
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
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CAB008A12FM4T
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 8M, 1200V, 33.8 MM,
Produkt ist nicht verfügbar
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CAB008A12GM3 Wolfspeed_CAB008A12GM3_data_sheet.pdf
CAB008A12GM3
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 182A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+625.98 EUR
18+586.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CAB008M12FM4T wolfspeed_power_line_card.pdf
Hersteller: Wolfspeed, Inc.
Description: SIC, MODULE, 8M, 1200V, 33.8 MM,
Produkt ist nicht verfügbar
Mindestbestellmenge: 18 Stücke
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CAB008M12GM3 Wolfspeed_CAB008M12GM3_data_sheet.pdf
CAB008M12GM3
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Part Status: Active
Produkt ist nicht verfügbar
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CAB008M12GM3T Wolfspeed_CAB008M12GM3_data_sheet.pdf
CAB008M12GM3T
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 146A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+302.22 EUR
18+258.61 EUR
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CAB011A12GM3 Wolfspeed_CAB011A12GM3_data_sheet.pdf
CAB011A12GM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+315.79 EUR
18+266.46 EUR
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CAB011A12GM3T Wolfspeed_CAB011A12GM3_data_sheet.pdf
CAB011A12GM3T
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
auf Bestellung 2 Stücke:
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CAB011M12FM3 Wolfspeed_CAB011M12FM3_data_sheet.pdf
CAB011M12FM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Part Status: Active
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CAB011M12FM3T Wolfspeed_CAB011M12FM3_data_sheet.pdf
CAB011M12FM3T
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 105A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 35mA
Supplier Device Package: Module
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CAB016M12FM3 Wolfspeed_CAB016M12FM3_data_sheet.pdf
CAB016M12FM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
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CAB016M12FM3T Wolfspeed_CAB016M12FM3_data_sheet.pdf
CAB016M12FM3T
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 78A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: Module
Part Status: Active
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CAB320M17XM3 Wolfspeed_CAB320M17XM3_Data_Sheet.pdf
CAB320M17XM3
Hersteller: Wolfspeed, Inc.
Description: SIC 1700V 320A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Part Status: Active
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CAB400M12XM3 Wolfspeed_CAB400M12XM3_data_sheet.pdf
CAB400M12XM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 395A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 92mA
Part Status: Active
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CAB425M12XM3 Wolfspeed_CAB425M12XM3_data_sheet.pdf
CAB425M12XM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 115mA
Part Status: Active
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CAB450M12XM3 Wolfspeed_CAB450M12XM3_data_sheet.pdf
CAB450M12XM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 450A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 850W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 177 Stücke:
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CAB500M17HM3 Wolfspeed_CAB500M17HM3_data_sheet.pdf
CAB500M17HM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 653A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 653A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 64900pF @ 1200V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1992nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 203mA
Supplier Device Package: Module
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CAB530M12BM3 Wolfspeed_CAB530M12BM3_data_sheet.pdf
CAB530M12BM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 530A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 530A
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 800V
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 4V
Vgs(th) (Max) @ Id: 3.6V @ 140mA
Supplier Device Package: Module
Part Status: Active
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CAB5R0A23GM4 Wolfspeed_CAB5R0A23GM4_data_sheet.pdf
CAB5R0A23GM4
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
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CAB5R0A23GM4T Wolfspeed_CAB5R0A23GM4_data_sheet.pdf
CAB5R0A23GM4T
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Produkt ist nicht verfügbar
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CAB650M17HM3 Wolfspeed_CAB650M17HM3_data_sheet.pdf
CAB650M17HM3
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1700V 916A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 305mA
Supplier Device Package: Module
Part Status: Active
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CAB6R0A23GM4 Wolfspeed_CAB6R0A23GM4_data_sheet.pdf
CAB6R0A23GM4
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
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CAB6R0A23GM4T Wolfspeed_CAB6R0A23GM4_data_sheet.pdf
CAB6R0A23GM4T
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
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CAB760M12HM3 CAB760M12HM3.pdf
CAB760M12HM3
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
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CAB760M12HM3R Wolfspeed_CAB760M12HM3R.pdf
CAB760M12HM3R
Hersteller: Wolfspeed, Inc.
Description: 760A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 50mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.015kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
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CAB7R5A23GM4 Wolfspeed_CAB7R5A23GM4_data_sheet.pdf
CAB7R5A23GM4
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
Produkt ist nicht verfügbar
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CAB7R5A23GM4T Wolfspeed_CAB7R5A23GM4_data_sheet.pdf
CAB7R5A23GM4T
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 510W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 24400pF @ 1500V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 160A, 15V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 15V
Vgs(th) (Max) @ Id: 4V @ 76mA
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CAR600M12HN6 Wolfspeed_CAR600M12HN6_data_sheet.pdf
CAR600M12HN6
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 908A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 908A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 45300pF @ 0V
Supplier Device Package: Module
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1+4449.26 EUR
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CAS120M12BM2 Wolfspeed_CAS120M12BM2_data_sheet.pdf
CAS120M12BM2
Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 193A MODULE
Produkt ist nicht verfügbar
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CAS175M12BM3 wolfspeed_CAS175M12BM3_data_sheet.pdf
CAS175M12BM3
Hersteller: Wolfspeed, Inc.
Description: 175A 1200V SIC HALF-BRIDGE MODUL
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 43mA
Part Status: Active
Produkt ist nicht verfügbar
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