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C4D08120E C4D08120E Wolfspeed, Inc. Wolfspeed_C4D08120E_data_sheet.pdf Description: DIODE SILICON 1.2KV 24.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.61 EUR
75+11.55 EUR
150+10.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D08120E-TR C4D08120E-TR Wolfspeed, Inc. Wolfspeed_C4D08120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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C4D08120E-TR C4D08120E-TR Wolfspeed, Inc. Wolfspeed_C4D08120E_data_sheet.pdf Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120A C4D10120A Wolfspeed, Inc. Wolfspeed_C4D10120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 33A TO220
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 33A
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.54 EUR
50+10.22 EUR
100+9.41 EUR
500+8.02 EUR
Mindestbestellmenge: 2 Stücke
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C4D10120D C4D10120D Wolfspeed, Inc. Wolfspeed_C4D10120D_data_sheet.pdf Description: DIODE ARR SIC 1200V 19A TO247-3
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 19A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.75 EUR
30+10.45 EUR
120+8.84 EUR
Mindestbestellmenge: 2 Stücke
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C4D10120E C4D10120E Wolfspeed, Inc. Wolfspeed_C4D10120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.2 EUR
75+9.56 EUR
150+8.84 EUR
525+7.84 EUR
1050+7.59 EUR
Mindestbestellmenge: 2 Stücke
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C4D10120E-TR C4D10120E-TR Wolfspeed, Inc. Wolfspeed_C4D10120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120E-TR C4D10120E-TR Wolfspeed, Inc. Wolfspeed_C4D10120E_data_sheet.pdf Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 2143 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.45 EUR
10+16.35 EUR
100+13.44 EUR
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C4D10120G Wolfspeed, Inc. Description: SIC, SCHOTTKY DIODE, 10A, 1200V,
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120H C4D10120H Wolfspeed, Inc. C4D10120H.pdf Description: DIODE SIL CARB 1.2KV 31.5A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 721 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.09 EUR
30+10.25 EUR
Mindestbestellmenge: 2 Stücke
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C4D15120A C4D15120A Wolfspeed, Inc. C4D15120A.pdf Description: DIODE SCHOTTKY 1.2KV 10A TO220-2
Produkt ist nicht verfügbar
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C4D15120D C4D15120D Wolfspeed, Inc. Wolfspeed_C4D15120D_data_sheet.pdf Description: DIODE ARR SIC 1200V TO247-3
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 24.5A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D15120H C4D15120H Wolfspeed, Inc. C4D15120H.pdf Description: DIODE SIL CARB 1.2KV 39A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1.2nF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 284 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.88 EUR
10+35.74 EUR
100+30.18 EUR
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C4D20120A C4D20120A Wolfspeed, Inc. Wolfspeed_C4D20120A_data_sheet.pdf Description: DIODE SIL CARB 1200V 54.5A TO220
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 54.5A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 3264 Stücke:
Lieferzeit 10-14 Tag (e)
1+47.08 EUR
50+28.51 EUR
100+26.73 EUR
500+25.81 EUR
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C4D20120D C4D20120D Wolfspeed, Inc. Wolfspeed_C4D20120D_data_sheet.pdf Description: DIODE ARR SIC 1200V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.48 EUR
30+19.39 EUR
120+16.73 EUR
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C4D20120G Wolfspeed, Inc. Description: DIODE SIL CARB 1.2KV 56A TO263-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120H C4D20120H Wolfspeed, Inc. Wolfspeed_C4D20120H_data_sheet.pdf Description: DIODE SIL CARB 1200V 54A TO2472
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 54A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.52 EUR
30+20.09 EUR
120+17.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D30120D C4D30120D Wolfspeed, Inc. Wolfspeed_C4D30120D_data_sheet.pdf Description: DIODE ARR SIC 1200V 44A TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 21.5A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.27 EUR
30+26.78 EUR
120+23.38 EUR
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C4D30120H C4D30120H Wolfspeed, Inc. C4D30120H.pdf Description: DIODE SIL CARB 1200V 94A TO2472
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 94A
Capacitance @ Vr, F: 2177pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Bulk
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.54 EUR
30+26.79 EUR
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C4D40120D C4D40120D Wolfspeed, Inc. C4D40120D.pdf Description: DIODE ARRAY SCHOTTKY 1200V TO247
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
1+79.5 EUR
10+74.16 EUR
100+64.39 EUR
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C4D40120H C4D40120H Wolfspeed, Inc. Wolfspeed_C4D40120H_data_sheet.pdf Description: DIODE SIL CARB 1200V 128A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2809pF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.12 EUR
30+35.01 EUR
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C4MS065120K C4MS065120K Wolfspeed, Inc. Wolfspeed_C4MS065120K_data_sheet.pdf Description: 65MO GEN4 1200V SIC MOSFET
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.3 EUR
30+7.63 EUR
120+6.38 EUR
Mindestbestellmenge: 2 Stücke
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C4MV015065T-TR C4MV015065T-TR Wolfspeed, Inc. Wolfspeed_C4MV015065T_data_sheet.pdf Description: 15M 650V SIC MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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C4MV015065T-TR C4MV015065T-TR Wolfspeed, Inc. Wolfspeed_C4MV015065T_data_sheet.pdf Description: 15M 650V SIC MOSFET
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.44 EUR
10+17.1 EUR
100+15.03 EUR
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C5D05170H C5D05170H Wolfspeed, Inc. C5D05170H.pdf Description: 5A, 1700V, G5 ZREC SIC SCHOTTKY
Produkt ist nicht verfügbar
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C5D25170H C5D25170H Wolfspeed, Inc. Description: DIODE SIL CARB 1.7KV 70A TO247-2
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 70A
Capacitance @ Vr, F: 1950pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Produkt ist nicht verfügbar
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C5D50065D C5D50065D Wolfspeed, Inc. C5D50065D.pdf Description: DIODE SIL CARB 650V 100A TO247-3
Produkt ist nicht verfügbar
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C6D04065A C6D04065A Wolfspeed, Inc. Wolfspeed_C6D04065A_data_sheet.pdf Description: DIODE SIL CARB 650V 18A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220-2
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A
auf Bestellung 877 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.19 EUR
50+2.56 EUR
100+2.3 EUR
500+1.84 EUR
Mindestbestellmenge: 5 Stücke
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C6D04065E C6D04065E Wolfspeed, Inc. Wolfspeed_C6D04065E_data_sheet.pdf Description: DIODE SIL CARB 650V 16A TO252-2
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3324 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.43 EUR
75+2.36 EUR
150+2.2 EUR
525+1.93 EUR
1050+1.74 EUR
2025+1.67 EUR
Mindestbestellmenge: 4 Stücke
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C6D04065E-TR C6D04065E-TR Wolfspeed, Inc. Wolfspeed_C6D04065E_data_sheet.pdf Description: DIODE SIL CARB 650V 16A TO252-2
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.99 EUR
10+3.22 EUR
100+2.21 EUR
500+1.8 EUR
Mindestbestellmenge: 5 Stücke
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C6D04065E-TR C6D04065E-TR Wolfspeed, Inc. Wolfspeed_C6D04065E_data_sheet.pdf Description: DIODE SIL CARB 650V 16A TO252-2
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D05170H C6D05170H Wolfspeed, Inc. Wolfspeed_C6D05170H_Data_Sheet.pdf Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 638pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 9 µA @ 1700 V
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.21 EUR
30+12.01 EUR
120+10.21 EUR
510+9.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065A C6D06065A Wolfspeed, Inc. Wolfspeed_C6D06065A_data_sheet.pdf Description: DIODE SIL CARB 650V 24A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.03 EUR
50+3.56 EUR
100+3.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065E C6D06065E Wolfspeed, Inc. Wolfspeed_C6D06065E_data_sheet.pdf Description: DIODE SIL CARB 650V 23A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 1736 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.31 EUR
75+2.71 EUR
150+2.68 EUR
525+2.52 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065E-TR C6D06065E-TR Wolfspeed, Inc. Wolfspeed_C6D06065E_data_sheet.pdf Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 2413 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.31 EUR
10+4.77 EUR
100+3.34 EUR
500+2.73 EUR
1000+2.53 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065E-TR C6D06065E-TR Wolfspeed, Inc. Wolfspeed_C6D06065E_data_sheet.pdf Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065G C6D06065G Wolfspeed, Inc. Wolfspeed_C6D06065G_data_sheet.pdf Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.43 EUR
50+4.31 EUR
100+3.69 EUR
500+3.28 EUR
Mindestbestellmenge: 4 Stücke
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C6D06065G-TR C6D06065G-TR Wolfspeed, Inc. Wolfspeed_C6D06065G_data_sheet.pdf Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.28 EUR
1600+2.81 EUR
2400+2.64 EUR
Mindestbestellmenge: 800 Stücke
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C6D06065G-TR C6D06065G-TR Wolfspeed, Inc. Wolfspeed_C6D06065G_data_sheet.pdf Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.43 EUR
10+4.57 EUR
100+3.69 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065Q-TR C6D06065Q-TR Wolfspeed, Inc. Wolfspeed_C6D06065Q.pdf Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065Q-TR C6D06065Q-TR Wolfspeed, Inc. Wolfspeed_C6D06065Q.pdf Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2353 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.43 EUR
10+4.57 EUR
100+3.69 EUR
500+3.28 EUR
1000+2.81 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065A C6D08065A Wolfspeed, Inc. Wolfspeed_C6D08065A_data_sheet.pdf Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.73 EUR
50+4.51 EUR
100+4.09 EUR
500+3.38 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065E C6D08065E Wolfspeed, Inc. Wolfspeed_C6D08065E_data_sheet.pdf Description: DIODE SIL CARB 650V 29A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4292 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.09 EUR
75+4.26 EUR
150+4.03 EUR
525+3.49 EUR
1050+3.25 EUR
2025+3.22 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065E-TR C6D08065E-TR Wolfspeed, Inc. Wolfspeed_C6D08065E_data_sheet.pdf Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065E-TR C6D08065E-TR Wolfspeed, Inc. Wolfspeed_C6D08065E_data_sheet.pdf Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.25 EUR
10+6.08 EUR
100+4.93 EUR
500+4.38 EUR
1000+3.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065G C6D08065G Wolfspeed, Inc. C6D08065G.pdf Description: 8A 650V SIC SCHOTTKY DIODE
auf Bestellung 1124 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.87 EUR
10+6.19 EUR
100+5.07 EUR
500+4.31 EUR
1000+3.64 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065Q-TR C6D08065Q-TR Wolfspeed, Inc. Wolfspeed_C6D08065Q.pdf Description: 8A 650V SIC SCHOTTKY QFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065Q-TR C6D08065Q-TR Wolfspeed, Inc. Wolfspeed_C6D08065Q.pdf Description: 8A 650V SIC SCHOTTKY QFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065A C6D10065A Wolfspeed, Inc. Wolfspeed_C6D10065A_data_sheet.pdf Description: DIODE SIL CARB 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.26 EUR
50+5.37 EUR
100+4.89 EUR
500+4.06 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065E C6D10065E Wolfspeed, Inc. Wolfspeed_C6D10065E_data_sheet.pdf Description: DIODE SIL CARB 650V 35A TO252-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 35A
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3226 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.33 EUR
75+4.94 EUR
150+4.69 EUR
525+4.07 EUR
1050+3.88 EUR
Mindestbestellmenge: 3 Stücke
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C6D10065E-TR C6D10065E-TR Wolfspeed, Inc. Wolfspeed_C6D10065E_data_sheet.pdf Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065E-TR C6D10065E-TR Wolfspeed, Inc. Wolfspeed_C6D10065E_data_sheet.pdf Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.39 EUR
10+6.93 EUR
100+4.95 EUR
500+4.12 EUR
1000+3.89 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065G C6D10065G Wolfspeed, Inc. Wolfspeed_C6D10065G_data_sheet.pdf Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.39 EUR
50+5.44 EUR
100+4.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065G-TR C6D10065G-TR Wolfspeed, Inc. Wolfspeed_C6D10065G_data_sheet.pdf Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.89 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065G-TR C6D10065G-TR Wolfspeed, Inc. Wolfspeed_C6D10065G_data_sheet.pdf Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 1895 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.39 EUR
10+6.93 EUR
100+4.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065Q-TR C6D10065Q-TR Wolfspeed, Inc. Wolfspeed_C6D10065Q.pdf Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065Q-TR C6D10065Q-TR Wolfspeed, Inc. Wolfspeed_C6D10065Q.pdf Description: DIODE SIL CARBIDE 650V 39A 4QFN
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 4-QFN (8x8)
Current - Average Rectified (Io): 39A
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerVQFN
Packaging: Cut Tape (CT)
auf Bestellung 2039 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.81 EUR
10+6.53 EUR
100+4.66 EUR
500+4.5 EUR
Mindestbestellmenge: 3 Stücke
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C6D10170H C6D10170H Wolfspeed, Inc. Wolfspeed_C6D10170H_Data_Sheet.pdf Description: DIODE SIL CARB 1700V 40A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1227pF @ 0V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1700 V
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.66 EUR
30+22.26 EUR
120+19.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C6D16065D C6D16065D Wolfspeed, Inc. Wolfspeed_C6D16065D_data_sheet.pdf Description: DIODE ARRAY SIC 650V 32A TO247-3
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.1 EUR
30+8.73 EUR
120+7.33 EUR
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C6D20065A C6D20065A Wolfspeed, Inc. Wolfspeed_C6D20065A_data_sheet.pdf Description: DIODE SIL CARB 650V 66A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1153pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.39 EUR
50+9.54 EUR
100+8.78 EUR
Mindestbestellmenge: 2 Stücke
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C4D08120E Wolfspeed_C4D08120E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SILICON 1.2KV 24.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.61 EUR
75+11.55 EUR
150+10.73 EUR
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C4D08120E-TR Wolfspeed_C4D08120E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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C4D08120E-TR Wolfspeed_C4D08120E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 24.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120A Wolfspeed_C4D10120A_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO220
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 33A
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.54 EUR
50+10.22 EUR
100+9.41 EUR
500+8.02 EUR
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C4D10120D Wolfspeed_C4D10120D_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 19A TO247-3
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 19A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.75 EUR
30+10.45 EUR
120+8.84 EUR
Mindestbestellmenge: 2 Stücke
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C4D10120E Wolfspeed_C4D10120E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.2 EUR
75+9.56 EUR
150+8.84 EUR
525+7.84 EUR
1050+7.59 EUR
Mindestbestellmenge: 2 Stücke
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C4D10120E-TR Wolfspeed_C4D10120E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120E-TR Wolfspeed_C4D10120E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 33A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 2143 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.45 EUR
10+16.35 EUR
100+13.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120G
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 10A, 1200V,
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D10120H C4D10120H.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 31.5A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 721 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.09 EUR
30+10.25 EUR
Mindestbestellmenge: 2 Stücke
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C4D15120A C4D15120A.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SCHOTTKY 1.2KV 10A TO220-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D15120D Wolfspeed_C4D15120D_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V TO247-3
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 24.5A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D15120H C4D15120H.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 39A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1.2nF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 284 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.88 EUR
10+35.74 EUR
100+30.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120A Wolfspeed_C4D20120A_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 54.5A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 3264 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+47.08 EUR
50+28.51 EUR
100+26.73 EUR
500+25.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120D Wolfspeed_C4D20120D_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.48 EUR
30+19.39 EUR
120+16.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120G
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 56A TO263-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C4D20120H Wolfspeed_C4D20120H_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54A TO2472
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 54A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+32.52 EUR
30+20.09 EUR
120+17.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D30120D Wolfspeed_C4D30120D_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE ARR SIC 1200V 44A TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 21.5A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+42.27 EUR
30+26.78 EUR
120+23.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D30120H C4D30120H.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 94A TO2472
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 94A
Capacitance @ Vr, F: 2177pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Bulk
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.54 EUR
30+26.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D40120D C4D40120D.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE ARRAY SCHOTTKY 1200V TO247
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+79.5 EUR
10+74.16 EUR
100+64.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4D40120H Wolfspeed_C4D40120H_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 128A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2809pF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+54.12 EUR
30+35.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C4MS065120K Wolfspeed_C4MS065120K_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: 65MO GEN4 1200V SIC MOSFET
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.3 EUR
30+7.63 EUR
120+6.38 EUR
Mindestbestellmenge: 2 Stücke
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C4MV015065T-TR Wolfspeed_C4MV015065T_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: 15M 650V SIC MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C4MV015065T-TR Wolfspeed_C4MV015065T_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: 15M 650V SIC MOSFET
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.44 EUR
10+17.1 EUR
100+15.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C5D05170H C5D05170H.pdf
Hersteller: Wolfspeed, Inc.
Description: 5A, 1700V, G5 ZREC SIC SCHOTTKY
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C5D25170H
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.7KV 70A TO247-2
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 70A
Capacitance @ Vr, F: 1950pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C5D50065D C5D50065D.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 100A TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D04065A Wolfspeed_C6D04065A_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 18A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-220-2
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A
auf Bestellung 877 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.19 EUR
50+2.56 EUR
100+2.3 EUR
500+1.84 EUR
Mindestbestellmenge: 5 Stücke
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C6D04065E Wolfspeed_C6D04065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO252-2
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3324 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
75+2.36 EUR
150+2.2 EUR
525+1.93 EUR
1050+1.74 EUR
2025+1.67 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D04065E-TR Wolfspeed_C6D04065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO252-2
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
10+3.22 EUR
100+2.21 EUR
500+1.8 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D04065E-TR Wolfspeed_C6D04065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 16A TO252-2
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 256pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D05170H Wolfspeed_C6D05170H_Data_Sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 638pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 9 µA @ 1700 V
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.21 EUR
30+12.01 EUR
120+10.21 EUR
510+9.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065A Wolfspeed_C6D06065A_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 24A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.03 EUR
50+3.56 EUR
100+3.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065E Wolfspeed_C6D06065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 1736 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.31 EUR
75+2.71 EUR
150+2.68 EUR
525+2.52 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065E-TR Wolfspeed_C6D06065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 2413 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.31 EUR
10+4.77 EUR
100+3.34 EUR
500+2.73 EUR
1000+2.53 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065E-TR Wolfspeed_C6D06065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 394pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065G Wolfspeed_C6D06065G_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
50+4.31 EUR
100+3.69 EUR
500+3.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065G-TR Wolfspeed_C6D06065G_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.28 EUR
1600+2.81 EUR
2400+2.64 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065G-TR Wolfspeed_C6D06065G_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 23A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
10+4.57 EUR
100+3.69 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065Q-TR Wolfspeed_C6D06065Q.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D06065Q-TR Wolfspeed_C6D06065Q.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 21A 4QFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 393pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2353 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
10+4.57 EUR
100+3.69 EUR
500+3.28 EUR
1000+2.81 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065A Wolfspeed_C6D08065A_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.73 EUR
50+4.51 EUR
100+4.09 EUR
500+3.38 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065E Wolfspeed_C6D08065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 29A TO252-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4292 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.09 EUR
75+4.26 EUR
150+4.03 EUR
525+3.49 EUR
1050+3.25 EUR
2025+3.22 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065E-TR Wolfspeed_C6D08065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065E-TR Wolfspeed_C6D08065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 8A, 650V, T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 518pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.25 EUR
10+6.08 EUR
100+4.93 EUR
500+4.38 EUR
1000+3.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065G C6D08065G.pdf
Hersteller: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY DIODE
auf Bestellung 1124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.87 EUR
10+6.19 EUR
100+5.07 EUR
500+4.31 EUR
1000+3.64 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065Q-TR Wolfspeed_C6D08065Q.pdf
Hersteller: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY QFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D08065Q-TR Wolfspeed_C6D08065Q.pdf
Hersteller: Wolfspeed, Inc.
Description: 8A 650V SIC SCHOTTKY QFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065A Wolfspeed_C6D10065A_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.26 EUR
50+5.37 EUR
100+4.89 EUR
500+4.06 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065E Wolfspeed_C6D10065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 35A TO252-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 35A
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3226 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.33 EUR
75+4.94 EUR
150+4.69 EUR
525+4.07 EUR
1050+3.88 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065E-TR Wolfspeed_C6D10065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065E-TR Wolfspeed_C6D10065E_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: SIC, SCHOTTKY DIODE, 10A, 650V,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.39 EUR
10+6.93 EUR
100+4.95 EUR
500+4.12 EUR
1000+3.89 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065G Wolfspeed_C6D10065G_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.39 EUR
50+5.44 EUR
100+4.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065G-TR Wolfspeed_C6D10065G_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.89 EUR
Mindestbestellmenge: 800 Stücke
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C6D10065G-TR Wolfspeed_C6D10065G_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 36A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 1895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.39 EUR
10+6.93 EUR
100+4.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065Q-TR Wolfspeed_C6D10065Q.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVQFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: 4-QFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C6D10065Q-TR Wolfspeed_C6D10065Q.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 39A 4QFN
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 4-QFN (8x8)
Current - Average Rectified (Io): 39A
Capacitance @ Vr, F: 611pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerVQFN
Packaging: Cut Tape (CT)
auf Bestellung 2039 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.81 EUR
10+6.53 EUR
100+4.66 EUR
500+4.5 EUR
Mindestbestellmenge: 3 Stücke
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C6D10170H Wolfspeed_C6D10170H_Data_Sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1700V 40A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1227pF @ 0V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1700 V
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.66 EUR
30+22.26 EUR
120+19.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
C6D16065D Wolfspeed_C6D16065D_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE ARRAY SIC 650V 32A TO247-3
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.1 EUR
30+8.73 EUR
120+7.33 EUR
Mindestbestellmenge: 2 Stücke
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C6D20065A Wolfspeed_C6D20065A_data_sheet.pdf
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 66A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1153pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.39 EUR
50+9.54 EUR
100+8.78 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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