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AOTF7N60FD AOTF7N60FD Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 600V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF7N60FD_001 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF7N65 AOTF7N65 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 650V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
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AOTF7N70 AOTF7N70 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 700V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
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AOTF7S60L AOTF7S60L Alpha & Omega Semiconductor Inc. AOTF7S60.pdf Description: MOSFET N-CH 600V 7A TO220-3F
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 34W (Tc)
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AOTF7S65 AOTF7S65 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 650V 7A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF7S65L Alpha & Omega Semiconductor Inc. Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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AOTF7T60 Alpha & Omega Semiconductor Inc. AOTF7T60.pdf Description: MOSFET N-CHANNEL 600V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 100 V
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AOTF7T60L Alpha & Omega Semiconductor Inc. AOTF7T60.pdf Description: MOSFET N-CHANNEL 600V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 100 V
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AOTF7T60P Alpha & Omega Semiconductor Inc. AOTF7T60P.pdf Description: MOSFET N-CH 600V 7A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF7T60PL AOTF7T60PL Alpha & Omega Semiconductor Inc. AOTF7T60P.pdf Description: MOSFET N-CH 600V 7A TO220-3F
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.46 EUR
50+1.12 EUR
100+1.06 EUR
500+0.95 EUR
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AOTF8N50 AOTF8N50 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 500V 8A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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AOTF8N50_002 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH TO220
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar
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AOTF8N50_003 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH TO220
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar
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AOTF8N50L Alpha & Omega Semiconductor Inc. Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8N50L_004 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 500V TO-220F
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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AOTF8N60 AOTF8N60 Alpha & Omega Semiconductor Inc. TO220F_Dwg.pdf Description: MOSFET N-CH 600V 8A TO220-3F
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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AOTF8N65 AOTF8N65 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 650V 8A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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AOTF8N65_002 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF8N65_003 Alpha & Omega Semiconductor Inc. Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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AOTF8N65_006 Alpha & Omega Semiconductor Inc. Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8N65L Alpha & Omega Semiconductor Inc. Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8N80 AOTF8N80 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 800V 7.4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8T50P AOTF8T50P Alpha & Omega Semiconductor Inc. AOTF8T50P.pdf Description: MOSFET N-CH 500V 8A TO220-3F
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AOTF8T50P_001 AOTF8T50P_001 Alpha & Omega Semiconductor Inc. AOTF8T50P.pdf Description: MOSFET N-CH 500V 8A TO220F
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AOTF9N50 AOTF9N50 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 500V 9A TO220-3F
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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AOTF9N50L Alpha & Omega Semiconductor Inc. Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF9N70 AOTF9N70 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 700V 9A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF9N70_002 Alpha & Omega Semiconductor Inc. Description: MOSFET
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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AOTF9N70L Alpha & Omega Semiconductor Inc. Description: MOSFET
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar
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AOTF9N90 AOTF9N90 Alpha & Omega Semiconductor Inc. TO220F.pdf Description: MOSFET N-CH 900V 9A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
Produkt ist nicht verfügbar
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AOTL66215 AOTL66215 Alpha & Omega Semiconductor Inc. Description: LINEAR IC
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: TOLLA
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 305A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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2000+3.38 EUR
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AOTL66401 AOTL66401 Alpha & Omega Semiconductor Inc. AOTL66401.pdf Description: MOSFET N-CH 40V 82A/400A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19180 pF @ 20 V
auf Bestellung 1462 Stücke:
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AOTL66401 AOTL66401 Alpha & Omega Semiconductor Inc. AOTL66401.pdf Description: MOSFET N-CH 40V 82A/400A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19180 pF @ 20 V
Produkt ist nicht verfügbar
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AOTL66515 AOTL66515 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=7324 Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 428W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16700 pF @ 75 V
Produkt ist nicht verfügbar
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AOTL66518 AOTL66518 Alpha & Omega Semiconductor Inc. AOTL66518.pdf Description: MOSFET N-CH 150V 214A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
auf Bestellung 1858 Stücke:
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AOTL66518 AOTL66518 Alpha & Omega Semiconductor Inc. AOTL66518.pdf Description: MOSFET N-CH 150V 214A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
Produkt ist nicht verfügbar
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AOTL66608 AOTL66608 Alpha & Omega Semiconductor Inc. AOTL66608.pdf Description: MOSFET N-CH 60V 73.5A/400A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73.5A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V
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2000+6.22 EUR
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AOTL66608 AOTL66608 Alpha & Omega Semiconductor Inc. AOTL66608.pdf Description: MOSFET N-CH 60V 73.5A/400A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73.5A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V
auf Bestellung 7023 Stücke:
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10+10.59 EUR
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AOTL66610 AOTL66610 Alpha & Omega Semiconductor Inc. AOTL66610.pdf Description: MOSFET N-CH 60V 61A/350A TOLLA
Input Capacitance (Ciss) (Max) @ Vds: 7625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TOLLA
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 350A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOTL66610 AOTL66610 Alpha & Omega Semiconductor Inc. AOTL66610.pdf Description: MOSFET N-CH 60V 61A/350A TOLLA
Input Capacitance (Ciss) (Max) @ Vds: 7625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TOLLA
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 350A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1937 Stücke:
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10+6.76 EUR
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500+4.31 EUR
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AOTL66810 AOTL66810 Alpha & Omega Semiconductor Inc. AOTL66810.pdf Description: DESC: MOSFET N-CH 80V 65A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 425W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 3240 Stücke:
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AOTL66810 AOTL66810 Alpha & Omega Semiconductor Inc. AOTL66810.pdf Description: DESC: MOSFET N-CH 80V 65A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: TOLLA
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 425W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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2000+5.75 EUR
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AOTL66810Q AOTL66810Q Alpha & Omega Semiconductor Inc. AOTL66810Q.pdf Description: AOTL66810Q
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Qualification: AEC-Q101
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2000+6.05 EUR
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AOTL66810Q AOTL66810Q Alpha & Omega Semiconductor Inc. AOTL66810Q.pdf Description: AOTL66810Q
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3428 Stücke:
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AOTL66912 AOTL66912 Alpha & Omega Semiconductor Inc. AOTL66912.pdf Description: MOSFET N-CH 100V 49A/380A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 380A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
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2000+6.9 EUR
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AOTL66912 AOTL66912 Alpha & Omega Semiconductor Inc. AOTL66912.pdf Description: MOSFET N-CH 100V 49A/380A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 380A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
auf Bestellung 14092 Stücke:
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2+16.86 EUR
10+11.51 EUR
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AOTL66912Q AOTL66912Q Alpha & Omega Semiconductor Inc. AOTL66912Q.pdf Description: AOTL66912Q
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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2000+7.59 EUR
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AOTL66912Q AOTL66912Q Alpha & Omega Semiconductor Inc. AOTL66912Q.pdf Description: AOTL66912Q
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2598 Stücke:
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AOTL66918 Alpha & Omega Semiconductor Inc. AOTL66918.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Produkt ist nicht verfügbar
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AOTS21115C AOTS21115C Alpha & Omega Semiconductor Inc. AOTS21115C.pdf Description: MOSFET P-CH 20V 6.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
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AOTS21115C AOTS21115C Alpha & Omega Semiconductor Inc. AOTS21115C.pdf Description: MOSFET P-CH 20V 6.6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
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AOTS21311C AOTS21311C Alpha & Omega Semiconductor Inc. AOTS21311C.pdf Description: MOSFET P-CH 30V 5.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
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AOTS21311C AOTS21311C Alpha & Omega Semiconductor Inc. AOTS21311C.pdf Description: MOSFET P-CH 30V 5.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
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AOTS21313C AOTS21313C Alpha & Omega Semiconductor Inc. AOTS21313C.pdf Description: MOSFET P-CH 30V 7.3A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOTS21319C AOTS21319C Alpha & Omega Semiconductor Inc. AOTS21319C.pdf Description: MOSFET P-CH 30V 2.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Produkt ist nicht verfügbar
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AOTS26108 AOTS26108 Alpha & Omega Semiconductor Inc. AOTS26108.pdf Description: MOSFET N/P-CH 30V/20V 3.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 930pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V, 44mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA, 950mV @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
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AOTS32338C AOTS32338C Alpha & Omega Semiconductor Inc. AOTS32338C.pdf Description: MOSFET 2N-CH 30V 3.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
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AOTS40B65H1 AOTS40B65H1 Alpha & Omega Semiconductor Inc. AOTS40B65H1.pdf Description: IGBT 650V 40A TO220
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AOU1N60 AOU1N60 Alpha & Omega Semiconductor Inc. AOU1N60.pdf Description: MOSFET N-CH 600V 1.3A TO251-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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AOTF7N60FD TO220F.pdf
AOTF7N60FD
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF7N60FD_001
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF7N65 TO220F.pdf
AOTF7N65
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF7N70 TO220F.pdf
AOTF7N70
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF7S60L AOTF7S60.pdf
AOTF7S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO220-3F
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 34W (Tc)
Produkt ist nicht verfügbar
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AOTF7S65 TO220F.pdf
AOTF7S65
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF7S65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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AOTF7T60 AOTF7T60.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 600V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 100 V
Produkt ist nicht verfügbar
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AOTF7T60L AOTF7T60.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 600V 7A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 962 pF @ 100 V
Produkt ist nicht verfügbar
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AOTF7T60P AOTF7T60P.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF7T60PL AOTF7T60P.pdf
AOTF7T60PL
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO220-3F
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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15+1.46 EUR
50+1.12 EUR
100+1.06 EUR
500+0.95 EUR
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AOTF8N50 TO220F.pdf
AOTF8N50
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 8A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF8N50_002
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH TO220
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar
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AOTF8N50_003
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH TO220
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar
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AOTF8N50L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8N50L_004
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V TO-220F
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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AOTF8N60 TO220F_Dwg.pdf
AOTF8N60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO220-3F
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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AOTF8N65 TO220F.pdf
AOTF8N65
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 8A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF8N65_002
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF8N65_003
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8N65_006
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8N65L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8N80 TO220F.pdf
AOTF8N80
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 800V 7.4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF8T50P AOTF8T50P.pdf
AOTF8T50P
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 8A TO220-3F
Produkt ist nicht verfügbar
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AOTF8T50P_001 AOTF8T50P.pdf
AOTF8T50P_001
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 8A TO220F
Produkt ist nicht verfügbar
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AOTF9N50 TO220F.pdf
AOTF9N50
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 9A TO220-3F
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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AOTF9N50L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF9N70 TO220F.pdf
AOTF9N70
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 9A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF9N70_002
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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AOTF9N70L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar
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AOTF9N90 TO220F.pdf
AOTF9N90
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 900V 9A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
Produkt ist nicht verfügbar
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AOTL66215
AOTL66215
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: TOLLA
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 305A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+3.38 EUR
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AOTL66401 AOTL66401.pdf
AOTL66401
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 82A/400A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19180 pF @ 20 V
auf Bestellung 1462 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.21 EUR
10+10.32 EUR
100+7.56 EUR
500+7.38 EUR
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AOTL66401 AOTL66401.pdf
AOTL66401
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 82A/400A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19180 pF @ 20 V
Produkt ist nicht verfügbar
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AOTL66515 combine-support-documents?resources=7324
AOTL66515
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 428W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16700 pF @ 75 V
Produkt ist nicht verfügbar
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AOTL66518 AOTL66518.pdf
AOTL66518
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 214A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
auf Bestellung 1858 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.86 EUR
10+11.51 EUR
100+8.47 EUR
500+8.45 EUR
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AOTL66518 AOTL66518.pdf
AOTL66518
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 150V 214A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
Produkt ist nicht verfügbar
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AOTL66608 AOTL66608.pdf
AOTL66608
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 73.5A/400A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73.5A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
2000+6.22 EUR
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AOTL66608 AOTL66608.pdf
AOTL66608
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 73.5A/400A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73.5A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V
auf Bestellung 7023 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.58 EUR
10+10.59 EUR
100+7.77 EUR
500+7.62 EUR
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AOTL66610 AOTL66610.pdf
AOTL66610
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 61A/350A TOLLA
Input Capacitance (Ciss) (Max) @ Vds: 7625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TOLLA
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 350A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOTL66610 AOTL66610.pdf
AOTL66610
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 61A/350A TOLLA
Input Capacitance (Ciss) (Max) @ Vds: 7625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TOLLA
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 350A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1937 Stücke:
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10+6.76 EUR
100+4.82 EUR
500+4.31 EUR
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AOTL66810 AOTL66810.pdf
AOTL66810
Hersteller: Alpha & Omega Semiconductor Inc.
Description: DESC: MOSFET N-CH 80V 65A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 425W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 3240 Stücke:
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AOTL66810 AOTL66810.pdf
AOTL66810
Hersteller: Alpha & Omega Semiconductor Inc.
Description: DESC: MOSFET N-CH 80V 65A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: TOLLA
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 420A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 425W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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AOTL66810Q AOTL66810Q.pdf
AOTL66810Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOTL66810Q
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Qualification: AEC-Q101
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2000+6.05 EUR
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AOTL66810Q AOTL66810Q.pdf
AOTL66810Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOTL66810Q
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3428 Stücke:
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10+10.34 EUR
100+7.57 EUR
500+7.39 EUR
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AOTL66912 AOTL66912.pdf
AOTL66912
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 49A/380A TOLLA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 380A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
auf Bestellung 14000 Stücke:
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2000+6.9 EUR
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AOTL66912 AOTL66912.pdf
AOTL66912
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 49A/380A TOLLA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 380A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TOLLA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
auf Bestellung 14092 Stücke:
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2+16.86 EUR
10+11.51 EUR
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AOTL66912Q AOTL66912Q.pdf
AOTL66912Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOTL66912Q
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
2000+7.59 EUR
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AOTL66912Q AOTL66912Q.pdf
AOTL66912Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOTL66912Q
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2598 Stücke:
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AOTL66918 AOTL66918.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Produkt ist nicht verfügbar
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AOTS21115C AOTS21115C.pdf
AOTS21115C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 6.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.36 EUR
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AOTS21115C AOTS21115C.pdf
AOTS21115C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 6.6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.6A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 7231 Stücke:
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100+0.6 EUR
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AOTS21311C AOTS21311C.pdf
AOTS21311C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 5.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
6000+0.3 EUR
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AOTS21311C AOTS21311C.pdf
AOTS21311C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 5.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 8233 Stücke:
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AnzahlPrivatkunde
15+1.4 EUR
25+0.86 EUR
100+0.56 EUR
500+0.42 EUR
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AOTS21313C AOTS21313C.pdf
AOTS21313C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 7.3A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOTS21319C AOTS21319C.pdf
AOTS21319C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Produkt ist nicht verfügbar
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AOTS26108 AOTS26108.pdf
AOTS26108
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V/20V 3.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 930pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V, 44mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA, 950mV @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
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AOTS32338C AOTS32338C.pdf
AOTS32338C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 3.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
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AOTS40B65H1 AOTS40B65H1.pdf
AOTS40B65H1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 40A TO220
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)
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AOU1N60 AOU1N60.pdf
AOU1N60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 1.3A TO251-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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