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DMT6002LPS-13 DIODES INCORPORATED DMT6002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004LPS-13 DIODES INCORPORATED DMT6004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SCT DMT6004SCT DIODES INCORPORATED DMT6004SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SPS-13 DIODES INCORPORATED DMT6004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-13 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-7 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LPS-13 DIODES INCORPORATED DMT6005LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LK3-13 DIODES INCORPORATED DMT6006LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LSS-13 DMT6006LSS-13 DIODES INCORPORATED DMT6006LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006SPS-13 DIODES INCORPORATED DMT6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-13 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-7 DMT6007LFG-7 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
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70+1.04 EUR
76+0.95 EUR
92+0.78 EUR
100+0.73 EUR
250+0.71 EUR
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DMT6007LFGQ-13 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6007LFGQ-7 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6008LFG-13 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6008LFG-7 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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SMBJ30A-13-F SMBJ30A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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272+0.26 EUR
315+0.23 EUR
391+0.18 EUR
550+0.13 EUR
582+0.12 EUR
676+0.11 EUR
770+0.093 EUR
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AP2112K-1.2TRG1 AP2112K-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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AP2112K-2.5TRG1 AP2112K-2.5TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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313+0.23 EUR
385+0.19 EUR
435+0.16 EUR
511+0.14 EUR
610+0.12 EUR
676+0.11 EUR
705+0.1 EUR
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DMC3021LSD-13 DMC3021LSD-13 DIODES INCORPORATED DMC3021LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
On-state resistance: 0.021/0.039Ω
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
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BSS127S-7 BSS127S-7 DIODES INCORPORATED BSS127.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
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283+0.25 EUR
410+0.17 EUR
481+0.15 EUR
596+0.12 EUR
695+0.1 EUR
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SMBJ58A-13-F SMBJ58A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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417+0.17 EUR
481+0.15 EUR
538+0.13 EUR
642+0.11 EUR
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74HCT125S14-13 74HCT125S14-13 DIODES INCORPORATED 74HCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: HCT
Technology: CMOS; TTL
Number of channels: 4
Mounting: SMD
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379+0.19 EUR
424+0.17 EUR
500+0.15 EUR
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TL431ASA-7 TL431ASA-7 DIODES INCORPORATED TL431_432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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AP63300WU-7 AP63300WU-7 DIODES INCORPORATED AP63300-AP63301.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
auf Bestellung 6524 Stücke:
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84+0.86 EUR
117+0.61 EUR
129+0.55 EUR
138+0.52 EUR
142+0.5 EUR
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BAS40-06-7-F BAS40-06-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
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BSS123-7-F BSS123-7-F DIODES INCORPORATED BSS123-7-F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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820+0.087 EUR
1629+0.044 EUR
2067+0.035 EUR
2193+0.033 EUR
3000+0.03 EUR
9000+0.029 EUR
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BSS123Q-13 BSS123Q-13 DIODES INCORPORATED BSS123Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BSS123Q-7 BSS123Q-7 DIODES INCORPORATED BSS123Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2766 Stücke:
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511+0.14 EUR
878+0.082 EUR
1283+0.056 EUR
1334+0.054 EUR
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BSS123TA BSS123TA DIODES INCORPORATED BSS123.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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40+1.79 EUR
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BSS123W-7-F BSS123W-7-F DIODES INCORPORATED BSS123W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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9+7.95 EUR
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BSS123WQ-7-F BSS123WQ-7-F DIODES INCORPORATED BSS123WQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG1024UV-7 DMG1024UV-7 DIODES INCORPORATED DMG1024UV-DTE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.89A
On-state resistance: 0.45Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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BAV70T-7-F BAV70T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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596+0.12 EUR
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AL5809-100P1-7 AL5809-100P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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AL5809-150P1-7 AL5809-150P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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AL5809-15P1-7 AL5809-15P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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AL5809-20S1-7 AL5809-20S1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 20mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 20mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
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244+0.29 EUR
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AL5809-30P1-7 AL5809-30P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 634 Stücke:
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173+0.41 EUR
243+0.29 EUR
257+0.28 EUR
269+0.27 EUR
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AL5809-40P1-7 AL5809-40P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 764 Stücke:
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162+0.44 EUR
227+0.32 EUR
250+0.29 EUR
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AL5809-50P1-7 AL5809-50P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 489 Stücke:
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277+0.26 EUR
323+0.22 EUR
343+0.21 EUR
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AL5809-60P1-7 AL5809-60P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 1887 Stücke:
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188+0.38 EUR
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AZ1117H-5.0TRE1 AZ1117H-5.0TRE1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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DMT3003LFG-13 DIODES INCORPORATED DMT3003LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3003LFG-7 DIODES INCORPORATED DMT3003LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3003LFGQ-7 DIODES INCORPORATED DMT3003LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3004LPS-13 DIODES INCORPORATED DMT3004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 43.7nC
On-state resistance: 6mΩ
Power dissipation: 2.7W
Drain current: 17A
Drain-source voltage: 30V
Pulsed drain current: 180A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3006LFDF-13 DIODES INCORPORATED DMT3006LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3006LFDF-7 DIODES INCORPORATED DMT3006LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3006LFDFQ-7 DIODES INCORPORATED DMT3006LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3006LFG-13 DIODES INCORPORATED DMT3006LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3006LFG-7 DIODES INCORPORATED DMT3006LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3006LPB-13 DIODES INCORPORATED DMT3006LPB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12.6nC
On-state resistance: 14mΩ
Power dissipation: 1.7W
Drain current: 9/11A
Drain-source voltage: 30V
Pulsed drain current: 80...100A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LDV-7 DIODES INCORPORATED DMT3020LDV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.9W
Drain current: 25A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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AP2120N-3.3TRG1 AP2120N-3.3TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Case: SOT23
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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BZT52C3V3-7-F BZT52C3V3-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 3219 Stücke:
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625+0.11 EUR
782+0.092 EUR
926+0.077 EUR
1202+0.059 EUR
1812+0.039 EUR
2488+0.029 EUR
2703+0.026 EUR
3000+0.024 EUR
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PAM2861ABR PAM2861ABR DIODES INCORPORATED PAM2861.pdf Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1; 6÷40VDC
Operating temperature: -40...85°C
Case: TSOT25
Kind of package: reel; tape
Mounting: SMD
Output current: 1A
Number of channels: 1
Operating voltage: 6...40V DC
Topology: buck
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
auf Bestellung 2491 Stücke:
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66+1.09 EUR
91+0.79 EUR
101+0.71 EUR
115+0.62 EUR
250+0.58 EUR
500+0.55 EUR
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SD103ATW-7-F SD103ATW-7-F DIODES INCORPORATED SD103ATW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: triple independent
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 113 Stücke:
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113+0.63 EUR
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SD103AWS-7-F SD103AWS-7-F DIODES INCORPORATED SD103AWS_SD103CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky switching
auf Bestellung 1315 Stücke:
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250+0.29 EUR
385+0.19 EUR
439+0.16 EUR
645+0.11 EUR
798+0.09 EUR
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SD103BWS-7-F SD103BWS-7-F DIODES INCORPORATED SD103AWS_SD103CWS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.35A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 35pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Leakage current: 5µA
Reverse recovery time: 10ns
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DMT6002LPS-13 DMT6002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004LPS-13 DMT6004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SCT DMT6004SCT.pdf
DMT6004SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SPS-13 DMT6004SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6005LFG-13 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-7 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6005LPS-13 DMT6005LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006LK3-13 DMT6006LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006LSS-13 DMT6006LSS.pdf
DMT6006LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6006SPS-13 DMT6006SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6007LFG-13 DMT6007LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
70+1.04 EUR
76+0.95 EUR
92+0.78 EUR
100+0.73 EUR
250+0.71 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-13 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFGQ-7 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6008LFG-13 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT6008LFG-7 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBJ30A-13-F SMBJ_ser.pdf
SMBJ30A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
272+0.26 EUR
315+0.23 EUR
391+0.18 EUR
550+0.13 EUR
582+0.12 EUR
676+0.11 EUR
770+0.093 EUR
Mindestbestellmenge: 228
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AP2112K-1.2TRG1 AP2112.pdf
AP2112K-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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AP2112K-2.5TRG1 AP2112.pdf
AP2112K-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 2915 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
385+0.19 EUR
435+0.16 EUR
511+0.14 EUR
610+0.12 EUR
676+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 313
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DMC3021LSD-13 DMC3021LSD-13.pdf
DMC3021LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
On-state resistance: 0.021/0.039Ω
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
Mindestbestellmenge: 21
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BSS127S-7 BSS127.pdf
BSS127S-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
283+0.25 EUR
410+0.17 EUR
481+0.15 EUR
596+0.12 EUR
695+0.1 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ58A-13-F SMBJ_ser.pdf
SMBJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
481+0.15 EUR
538+0.13 EUR
642+0.11 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
74HCT125S14-13 74HCT125.pdf
74HCT125S14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: HCT
Technology: CMOS; TTL
Number of channels: 4
Mounting: SMD
auf Bestellung 1694 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
256+0.28 EUR
379+0.19 EUR
424+0.17 EUR
500+0.15 EUR
Mindestbestellmenge: 256
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TL431ASA-7 TL431_432.pdf
TL431ASA-7
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
121+0.59 EUR
Mindestbestellmenge: 121
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AP63300WU-7 AP63300-AP63301.pdf
AP63300WU-7
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
auf Bestellung 6524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
117+0.61 EUR
129+0.55 EUR
138+0.52 EUR
142+0.5 EUR
Mindestbestellmenge: 84
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BAS40-06-7-F BAS40_-04_-05_-06.pdf
BAS40-06-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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BSS123-7-F BSS123-7-F.pdf
BSS123-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 79407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
820+0.087 EUR
1629+0.044 EUR
2067+0.035 EUR
2193+0.033 EUR
3000+0.03 EUR
9000+0.029 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BSS123Q-13 BSS123Q.pdf
BSS123Q-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS123Q-7 BSS123Q.pdf
BSS123Q-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2766 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
511+0.14 EUR
878+0.082 EUR
1283+0.056 EUR
1334+0.054 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BSS123TA BSS123.pdf
BSS123TA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BSS123W-7-F BSS123W.pdf
BSS123W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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BSS123WQ-7-F BSS123WQ.pdf
BSS123WQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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DMG1024UV-7 DMG1024UV-DTE.pdf
DMG1024UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.89A
On-state resistance: 0.45Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 8146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
209+0.34 EUR
341+0.21 EUR
511+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
BAV70T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV70T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
auf Bestellung 1818 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
596+0.12 EUR
642+0.11 EUR
842+0.085 EUR
1083+0.066 EUR
1235+0.058 EUR
Mindestbestellmenge: 556
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AL5809-100P1-7 AL5809-DTE.pdf
AL5809-100P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
218+0.33 EUR
236+0.3 EUR
Mindestbestellmenge: 152
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AL5809-150P1-7 AL5809-DTE.pdf
AL5809-150P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 1334 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
191+0.37 EUR
211+0.34 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
AL5809-15P1-7 AL5809-DTE.pdf
AL5809-15P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
244+0.29 EUR
253+0.28 EUR
Mindestbestellmenge: 173
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AL5809-20S1-7 AL5809-DTE.pdf
AL5809-20S1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 20mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 20mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
auf Bestellung 914 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
244+0.29 EUR
266+0.27 EUR
Mindestbestellmenge: 173
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AL5809-30P1-7 AL5809-DTE.pdf
AL5809-30P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
243+0.29 EUR
257+0.28 EUR
269+0.27 EUR
Mindestbestellmenge: 173
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AL5809-40P1-7 AL5809-DTE.pdf
AL5809-40P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
227+0.32 EUR
250+0.29 EUR
Mindestbestellmenge: 162
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AL5809-50P1-7 AL5809-DTE.pdf
AL5809-50P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
243+0.29 EUR
277+0.26 EUR
323+0.22 EUR
343+0.21 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
AL5809-60P1-7 AL5809-DTE.pdf
AL5809-60P1-7
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
auf Bestellung 1887 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
188+0.38 EUR
223+0.32 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
AZ1117H-5.0TRE1 AZ1117_Rev5.3_Jan2019_DS.pdf
AZ1117H-5.0TRE1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Produkt ist nicht verfügbar
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DMT3003LFG-13 DMT3003LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3003LFG-7 DMT3003LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3003LFGQ-7 DMT3003LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3004LPS-13 DMT3004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 43.7nC
On-state resistance: 6mΩ
Power dissipation: 2.7W
Drain current: 17A
Drain-source voltage: 30V
Pulsed drain current: 180A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFDF-13 DMT3006LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFDF-7 DMT3006LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFDFQ-7 DMT3006LFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3006LFG-13 DMT3006LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFG-7 DMT3006LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3006LPB-13 DMT3006LPB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12.6nC
On-state resistance: 14mΩ
Power dissipation: 1.7W
Drain current: 9/11A
Drain-source voltage: 30V
Pulsed drain current: 80...100A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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DMT3020LDV-7 DMT3020LDV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.9W
Drain current: 25A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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AP2120N-3.3TRG1 AP2120.pdf
AP2120N-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Case: SOT23
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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BZT52C3V3-7-F BZT52Cxx_ser.pdf
BZT52C3V3-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 3219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
782+0.092 EUR
926+0.077 EUR
1202+0.059 EUR
1812+0.039 EUR
2488+0.029 EUR
2703+0.026 EUR
3000+0.024 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
PAM2861ABR PAM2861.pdf
PAM2861ABR
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 1A; TSOT25; SMD; Ch: 1; 6÷40VDC
Operating temperature: -40...85°C
Case: TSOT25
Kind of package: reel; tape
Mounting: SMD
Output current: 1A
Number of channels: 1
Operating voltage: 6...40V DC
Topology: buck
Kind of integrated circuit: DC/DC converter; LED driver
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
auf Bestellung 2491 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
91+0.79 EUR
101+0.71 EUR
115+0.62 EUR
250+0.58 EUR
500+0.55 EUR
Mindestbestellmenge: 66
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SD103ATW-7-F SD103ATW.pdf
SD103ATW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: triple independent
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
113+0.63 EUR
Mindestbestellmenge: 113
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SD103AWS-7-F SD103AWS_SD103CWS.pdf
SD103AWS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Mounting: SMD
Load current: 0.35A
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Type of diode: Schottky switching
auf Bestellung 1315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
385+0.19 EUR
439+0.16 EUR
645+0.11 EUR
798+0.09 EUR
1000+0.082 EUR
Mindestbestellmenge: 250
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SD103BWS-7-F SD103AWS_SD103CWS.pdf
SD103BWS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.35A; 10ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 35pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Leakage current: 5µA
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
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