Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79029) > Seite 189 nach 1318
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DMP2022LSS-13 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 10A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3035LSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 11A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V |
auf Bestellung 115000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 6.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3056LSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 7.1A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3098LSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 4.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
Produkt ist nicht verfügbar |
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DMP3100L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V Power Dissipation (Max): 1.08W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 10 V |
Produkt ist nicht verfügbar |
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DMP57D5UFB-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 200MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V Power Dissipation (Max): 425mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V |
Produkt ist nicht verfügbar |
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DNLS160-7 | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 270MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
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DNLS320A-7 | Diodes Incorporated |
Description: TRANS NPN 20V 2A SOT23-3 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DNLS320E-13 | Diodes Incorporated |
Description: TRANS NPN 20V 3A SOT-223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 20mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
auf Bestellung 515000 Stücke: Lieferzeit 10-14 Tag (e) |
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DNLS350E-13 | Diodes Incorporated |
Description: TRANS NPN 50V 3A SOT-223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 37500 Stücke: Lieferzeit 10-14 Tag (e) |
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DNLS350Y-13 | Diodes Incorporated |
 Description: TRANS NPN 50V 3A SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 355000 Stücke: Lieferzeit 10-14 Tag (e) |
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DPLS320A-7 | Diodes Incorporated |
Description: TRANS PNP 20V 2A SOT-23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 215MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
Produkt ist nicht verfügbar |
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DPLS4140E-13 | Diodes Incorporated |
Description: TRANS PNP 140V 4A SOT-223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W |
auf Bestellung 110000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT651-13 | Diodes Incorporated |
Description: TRANS NPN 60V 3A SOT-89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DZT651-13 | Diodes Incorporated |
Description: TRANS NPN 60V 3A SOT-223 |
auf Bestellung 125007500 Stücke: Lieferzeit 10-14 Tag (e) |
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DZT658-13 | Diodes Incorporated |
Description: TRANS NPN 400V 0.5A SOT223-3 |
Produkt ist nicht verfügbar |
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DZT751-13 | Diodes Incorporated |
Description: TRANS PNP 60V 3A SOT-223 |
Produkt ist nicht verfügbar |
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DZT955-13 | Diodes Incorporated |
Description: TRANS PNP 140V 4A SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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GBJ1008-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 10A GBJ Packaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
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GBJ1508-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 15A GBJ Packaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 158416 Stücke: Lieferzeit 10-14 Tag (e) |
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GBJ2008-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 20A GBJ Packaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 6545 Stücke: Lieferzeit 10-14 Tag (e) |
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GBJ2508-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 25A GBJ Packaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 27666 Stücke: Lieferzeit 10-14 Tag (e) |
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GBJ608-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 6A GBJ Packaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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GBJ808-F | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 8A GBJ Packaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 555 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU1001 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 100V 10A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 938 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU1004 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 400V 10A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 273 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU4005 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 50V 4A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
auf Bestellung 10871 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU402 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 200V 4A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 1336 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU6005 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 50V 6A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
auf Bestellung 1882 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU602 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 200V 6A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 1380 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJ4005G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 50V 4A KBJ |
auf Bestellung 920 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJ402G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 200V 4A KBJ |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJ404G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 400V 4A KBJ |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJ406G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 600V 4A KBJ Packaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 34150 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJ6005G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 50V 6A KBJ Packaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Part Status: Obsolete Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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KBJ602G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 200V 6A KBJ Packaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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KBJ604G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 400V 6A KBJ Packaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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KBJ606G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 600V 6A KBJ Packaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJ608G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 800V 6A KBJ Packaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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KBJ610G | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 6A KBJ Packaging: Tube Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 5680 Stücke: Lieferzeit 10-14 Tag (e) |
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LL4148-7 | Diodes Incorporated |
Description: DIODE STD 75V 150MA MINI MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar |
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MBR1030 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 400pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
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MBR1030CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 30V 10A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
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MBR1035CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 35V 10A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
Produkt ist nicht verfügbar |
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MBR1040 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 400pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
Produkt ist nicht verfügbar |
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MBR1040CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 40V 10A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
Produkt ist nicht verfügbar |
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MBR1050CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 50V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
Produkt ist nicht verfügbar |
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MBR1070CT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTTKY 70V TO220AB |
Produkt ist nicht verfügbar |
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MBR1530CT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTTKY 30V TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR1540CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 40V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR1630 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 16A TO220AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR1640 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 16A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 450pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR2030CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 30V 20A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR2040CT | Diodes Incorporated |
Description: DIODE ARR SCHOTT 40V 20A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR3030PT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTTKY 30V TO3P |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR3040PT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTT 40V 30A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-3P Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR4030PT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTTKY 30V TO3P |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR4040PT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTTKY 40V TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-3P Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR6030PT | Diodes Incorporated |
Description: DIODE ARRAY SCHOTT 30V 60A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-3P Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMP2022LSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V
Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2444 pF @ 10 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.45 EUR |
| 5000+ | 0.42 EUR |
| 7500+ | 0.4 EUR |
| 12500+ | 0.39 EUR |
| DMP3035LSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V
auf Bestellung 115000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.34 EUR |
| 5000+ | 0.32 EUR |
| 12500+ | 0.3 EUR |
| 25000+ | 0.29 EUR |
| DMP3056LSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.36 EUR |
| 5000+ | 0.35 EUR |
| DMP3056LSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
Description: MOSFET P-CH 30V 7.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.27 EUR |
| DMP3098LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP3100L-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 10 V
Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP57D5UFB-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 200MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Power Dissipation (Max): 425mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V
Description: MOSFET P-CH 50V 200MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Power Dissipation (Max): 425mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DNLS160-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DNLS320A-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 2A SOT23-3
Description: TRANS NPN 20V 2A SOT23-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DNLS320E-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 20mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS NPN 20V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 20mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 515000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.34 EUR |
| 5000+ | 0.32 EUR |
| 7500+ | 0.3 EUR |
| 12500+ | 0.28 EUR |
| 17500+ | 0.27 EUR |
| 62500+ | 0.26 EUR |
| DNLS350E-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.18 EUR |
| 5000+ | 0.17 EUR |
| 7500+ | 0.16 EUR |
| DNLS350Y-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 3A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 355000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.19 EUR |
| 5000+ | 0.18 EUR |
| 12500+ | 0.17 EUR |
| 25000+ | 0.16 EUR |
| 62500+ | 0.15 EUR |
| DPLS320A-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DPLS4140E-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 4A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Description: TRANS PNP 140V 4A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.3 EUR |
| 5000+ | 0.28 EUR |
| 7500+ | 0.27 EUR |
| 12500+ | 0.25 EUR |
| 17500+ | 0.24 EUR |
| 25000+ | 0.23 EUR |
| DXT651-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.32 EUR |
| DZT651-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A SOT-223
Description: TRANS NPN 60V 3A SOT-223
auf Bestellung 125007500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DZT658-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.5A SOT223-3
Description: TRANS NPN 400V 0.5A SOT223-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DZT751-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3A SOT-223
Description: TRANS PNP 60V 3A SOT-223
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DZT955-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 4A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Description: TRANS PNP 140V 4A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBJ1008-F |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBJ1508-F |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 158416 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.92 EUR |
| 15+ | 2.29 EUR |
| 105+ | 1.91 EUR |
| 510+ | 1.79 EUR |
| 1005+ | 1.34 EUR |
| GBJ2008-F |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 6545 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.49 EUR |
| 15+ | 2.7 EUR |
| 105+ | 1.99 EUR |
| 510+ | 1.74 EUR |
| 1005+ | 1.69 EUR |
| 2010+ | 1.38 EUR |
| GBJ2508-F |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 27666 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.52 EUR |
| 15+ | 2.48 EUR |
| 105+ | 1.78 EUR |
| 510+ | 1.51 EUR |
| 1005+ | 1.5 EUR |
| 2010+ | 1.42 EUR |
| GBJ608-F |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 6A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBJ808-F |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 2.53 EUR |
| GBU1001 |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.77 EUR |
| 20+ | 2.14 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.32 EUR |
| GBU1004 |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.78 EUR |
| 20+ | 1.96 EUR |
| 100+ | 1.65 EUR |
| GBU4005 |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 10871 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.8 EUR |
| 20+ | 1.57 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| 2000+ | 0.79 EUR |
| 5000+ | 0.72 EUR |
| GBU402 |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1336 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 20+ | 1.23 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.8 EUR |
| GBU6005 |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1882 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 20+ | 1.98 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.06 EUR |
| GBU602 |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.36 EUR |
| 20+ | 1.9 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 1.06 EUR |
| KBJ4005G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 4A KBJ
Description: BRIDGE RECT 1PHASE 50V 4A KBJ
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| KBJ402G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 12+ | 1.48 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.95 EUR |
| KBJ404G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 4A KBJ
Description: BRIDGE RECT 1PHASE 400V 4A KBJ
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| KBJ406G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 4A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 34150 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.45 EUR |
| 20+ | 1.36 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.71 EUR |
| 2000+ | 0.68 EUR |
| 5000+ | 0.61 EUR |
| 10000+ | 0.59 EUR |
| KBJ6005G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBJ602G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBJ604G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBJ606G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 600V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 10+ | 1.8 EUR |
| KBJ608G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 800V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.31 EUR |
| KBJ610G |
|
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A KBJ
Packaging: Tube
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5680 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 20+ | 1.72 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.95 EUR |
| 2000+ | 0.88 EUR |
| 5000+ | 0.82 EUR |
| LL4148-7 |
|
Hersteller: Diodes Incorporated
Description: DIODE STD 75V 150MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STD 75V 150MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1030 |
|
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1030CT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 30V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARR SCHOTT 30V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1035CT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 35V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE ARR SCHOTT 35V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1040 |
|
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1040CT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1050CT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 50V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARR SCHOTT 50V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1070CT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY 70V TO220AB
Description: DIODE ARRAY SCHOTTKY 70V TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1530CT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY 30V TO220AB
Description: DIODE ARRAY SCHOTTKY 30V TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1540CT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1630 |
|
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 16A TO220AC
Description: DIODE SCHOTTKY 30V 16A TO220AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1640 |
|
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2030CT |
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 30V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARR SCHOTT 30V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2040CT |
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR3030PT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY 30V TO3P
Description: DIODE ARRAY SCHOTTKY 30V TO3P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR3040PT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 40V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 30A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR4030PT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY 30V TO3P
Description: DIODE ARRAY SCHOTTKY 30V TO3P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR4040PT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY 40V TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR6030PT |
|
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 30V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE ARRAY SCHOTT 30V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH