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ZXMP6A17DN8TA ZXMP6A17DN8TA Diodes Incorporated ZXMP6A17DN8.pdf Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 8500 Stücke:
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500+0.83 EUR
1000+0.76 EUR
1500+0.72 EUR
2500+0.68 EUR
3500+0.66 EUR
5000+0.64 EUR
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ZXMP6A13GTA ZXMP6A13GTA Diodes Incorporated ZXMP6A13G.pdf Description: MOSFET P-CH 60V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 416000 Stücke:
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1000+0.54 EUR
2000+0.49 EUR
3000+0.47 EUR
5000+0.44 EUR
7000+0.43 EUR
10000+0.41 EUR
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ZXMP6A17E6TA ZXMP6A17E6TA Diodes Incorporated ZXMP6A17E6.pdf Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22700 Stücke:
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3000+0.31 EUR
6000+0.3 EUR
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ZXMP6A13FTA ZXMP6A13FTA Diodes Incorporated ZXMP6A13F.pdf Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 288000 Stücke:
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6000+0.27 EUR
9000+0.25 EUR
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ZXMN10B08E6TA ZXMN10B08E6TA Diodes Incorporated ZXMN10B08E6.pdf Description: MOSFET N-CH 100V 1.6A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
auf Bestellung 306000 Stücke:
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3000+0.46 EUR
6000+0.44 EUR
9000+0.41 EUR
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ZXM41N10FTA ZXM41N10FTA Diodes Incorporated ZXM41N10F.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
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ZXMP10A18GTA ZXMP10A18GTA Diodes Incorporated ZXMP10A18G.pdf Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 12640 Stücke:
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2000+1.17 EUR
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ZXMP10A17E6TA ZXMP10A17E6TA Diodes Incorporated ZXMP10A17E6.pdf Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 12615 Stücke:
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6000+0.43 EUR
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ZXMP10A13FTA ZXMP10A13FTA Diodes Incorporated ZXMP10A13F.pdf Description: MOSFET P-CH 100V 600MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
auf Bestellung 351000 Stücke:
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3000+0.3 EUR
6000+0.28 EUR
9000+0.27 EUR
15000+0.25 EUR
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ZAMP001H6TA ZAMP001H6TA Diodes Incorporated ZAMP001.pdf Description: AMPLIFIER 18DB GAIN LNA SC70-6
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ZAMP003H6TA ZAMP003H6TA Diodes Incorporated ZAMP003.pdf Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
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ZLLS2000TA ZLLS2000TA Diodes Incorporated ZLLS2000.pdf Description: DIODE SCHOTTKY 40V 2.2A SOT236
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: SOT-23-6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
auf Bestellung 314694 Stücke:
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ZLLS1000TA ZLLS1000TA Diodes Incorporated ZLLS1000.pdf Description: DIODE SCHOTTKY 40V 1.16A SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Current - Average Rectified (Io): 1.16A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
auf Bestellung 1137277 Stücke:
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ZLLS500TA ZLLS500TA Diodes Incorporated ZLLS500.pdf Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 218941 Stücke:
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ZXMN2A02N8TA ZXMN2A02N8TA Diodes Incorporated ZXMN2A02N8.pdf Description: MOSFET N-CH 20V 8.3A 8-SOIC
auf Bestellung 749 Stücke:
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ZXMN2A14FTA ZXMN2A14FTA Diodes Incorporated ZXMN2A14F.pdf Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
auf Bestellung 95454 Stücke:
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ZXMN3A14FTA ZXMN3A14FTA Diodes Incorporated ZXMN3A14F.pdf Description: MOSFET N-CH 30V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 485495 Stücke:
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100+0.43 EUR
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ZXM64N035GTA ZXM64N035GTA Diodes Incorporated ZXM64N035G.pdf Description: MOSFET N-CH 35V 6.7A SOT223
Produkt ist nicht verfügbar
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ZXMP3A16GTA ZXMP3A16GTA Diodes Incorporated ZXMP3A16G.pdf Description: MOSFET P-CH 30V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
auf Bestellung 1614065 Stücke:
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ZXM64P035GTA ZXM64P035GTA Diodes Incorporated ZXM64P035G.pdf Description: MOSFET P-CH 35V 3.8A SOT223
Produkt ist nicht verfügbar
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ZXMN6A09GTA ZXMN6A09GTA Diodes Incorporated ZXMN6A09G.pdf Description: MOSFET N-CH 60V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
auf Bestellung 50721 Stücke:
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10+1.92 EUR
100+1.29 EUR
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ZXMN6A11ZTA ZXMN6A11ZTA Diodes Incorporated ZXMN6A11Z.pdf Description: MOSFET N-CH 60V 2.7A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
auf Bestellung 68050 Stücke:
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ZXMP6A18DN8TA ZXMP6A18DN8TA Diodes Incorporated ZXMP6A18DN8.pdf Description: MOSFET 2P-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 29511 Stücke:
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ZXMP6A17GTA ZXMP6A17GTA Diodes Incorporated ZXMP6A17G.pdf Description: MOSFET P-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
auf Bestellung 66184 Stücke:
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20+0.92 EUR
100+0.61 EUR
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ZXMP6A17DN8TA ZXMP6A17DN8TA Diodes Incorporated ZXMP6A17DN8.pdf Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 9193 Stücke:
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100+1.06 EUR
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ZXMP6A13GTA ZXMP6A13GTA Diodes Incorporated ZXMP6A13G.pdf Description: MOSFET P-CH 60V 1.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 416576 Stücke:
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ZXMP6A17E6TA ZXMP6A17E6TA Diodes Incorporated ZXMP6A17E6.pdf Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23266 Stücke:
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ZXMP6A13FTA ZXMP6A13FTA Diodes Incorporated ZXMP6A13F.pdf Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 288508 Stücke:
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ZXMN10B08E6TA ZXMN10B08E6TA Diodes Incorporated ZXMN10B08E6.pdf Description: MOSFET N-CH 100V 1.6A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
auf Bestellung 308033 Stücke:
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ZXM41N10FTA ZXM41N10FTA Diodes Incorporated ZXM41N10F.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
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ZXMP10A18GTA ZXMP10A18GTA Diodes Incorporated ZXMP10A18G.pdf Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 12833 Stücke:
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ZXMP10A17E6TA ZXMP10A17E6TA Diodes Incorporated ZXMP10A17E6.pdf Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 13237 Stücke:
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ZXMP10A13FTA ZXMP10A13FTA Diodes Incorporated ZXMP10A13F.pdf Description: MOSFET P-CH 100V 600MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
auf Bestellung 351400 Stücke:
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ZAMP001H6TA ZAMP001H6TA Diodes Incorporated ZAMP001.pdf Description: AMPLIFIER 18DB GAIN LNA SC70-6
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ZAMP002H6TA ZAMP002H6TA Diodes Incorporated ZAMP002.pdf Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 800MHz ~ 2.5GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 25dB
Current - Supply: 21mA ~ 24mA
Noise Figure: 7dB
P1dB: 7dbm
Test Frequency: 950MHz ~ 2.15GHz
Supplier Device Package: SC-70-6
auf Bestellung 2548 Stücke:
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BAT54ST-7 BAT54ST-7 Diodes Incorporated BAT54T_AT_CT_ST.pdf Description: DIODE ARR SCHOT 30V 200MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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SD103ATW-7 SD103ATW-7 Diodes Incorporated SD103ATW.pdf Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
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MMBD3004BRM-7 MMBD3004BRM-7 Diodes Incorporated Description: DIODE ARRAY GP 300V 225MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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2N7002T-7 2N7002T-7 Diodes Incorporated ds30301.pdf Description: MOSFET N-CH 60V 115MA SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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BSS8402DW-7 BSS8402DW-7 Diodes Incorporated ds30380.pdf Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SDM10M45SD-7 SDM10M45SD-7 Diodes Incorporated SDM10M45SD.pdf Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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BAV199T-7 BAV199T-7 Diodes Incorporated BAS116T%2CBAW156T%2CBAV170T%2CBAV199T_Nov2005.pdf Description: DIODE ARRAY GP 85V 125MA SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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SBM340-13 SBM340-13 Diodes Incorporated ds30362.pdf Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Produkt ist nicht verfügbar
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SBM540-13 SBM540-13 Diodes Incorporated ds30297.pdf Description: DIODE SCHOTTKY 40V 5A POWERMITE3
Packaging: Tape & Reel (TR)
Package / Case: Powermite®3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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TB0640H-13 TB0640H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 58V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 77V
Voltage - Off State: 58V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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TB0640L-13 TB0640L-13 Diodes Incorporated ds30359.pdf Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
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TB0720H-13 TB0720H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR 65V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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TB1100M-13 TB1100M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 90V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TB1300M-13 TB1300M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 120V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 120V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TB1800L-13 TB1800L-13 Diodes Incorporated ds30359.pdf Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
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TB2300L-13 TB2300L-13 Diodes Incorporated TB0640L~TB3500L.pdf Description: THYRISTOR 190V 150A DO214AA
Produkt ist nicht verfügbar
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TB3100M-13 TB3100M-13 Diodes Incorporated TB0640M-TB3500M.pdf Description: THYRISTOR 275V 250A DO214AA
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TB3500H-13 TB3500H-13 Diodes Incorporated ds30360.pdf Description: THYRISTOR PROTECT BIDIR 100A SMB
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TB3500L-13 TB3500L-13 Diodes Incorporated ds30359.pdf Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
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BAT54ST-7 BAT54ST-7 Diodes Incorporated BAT54T_AT_CT_ST.pdf Description: DIODE ARR SCHOT 30V 200MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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SD103ATW-7 SD103ATW-7 Diodes Incorporated SD103ATW.pdf Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
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2N7002T-7 2N7002T-7 Diodes Incorporated ds30301.pdf Description: MOSFET N-CH 60V 115MA SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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BSS8402DW-7 BSS8402DW-7 Diodes Incorporated ds30380.pdf Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SDM10M45SD-7 SDM10M45SD-7 Diodes Incorporated SDM10M45SD.pdf Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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BAV199T-7 BAV199T-7 Diodes Incorporated BAS116T%2CBAW156T%2CBAV170T%2CBAV199T_Nov2005.pdf Description: DIODE ARRAY GP 85V 125MA SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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ZXMP6A17DN8TA ZXMP6A17DN8.pdf
ZXMP6A17DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.83 EUR
1000+0.76 EUR
1500+0.72 EUR
2500+0.68 EUR
3500+0.66 EUR
5000+0.64 EUR
Mindestbestellmenge: 500
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ZXMP6A13GTA ZXMP6A13G.pdf
ZXMP6A13GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 416000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.54 EUR
2000+0.49 EUR
3000+0.47 EUR
5000+0.44 EUR
7000+0.43 EUR
10000+0.41 EUR
Mindestbestellmenge: 1000
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ZXMP6A17E6TA ZXMP6A17E6.pdf
ZXMP6A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.3 EUR
15000+0.28 EUR
Mindestbestellmenge: 3000
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ZXMP6A13FTA ZXMP6A13F.pdf
ZXMP6A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 288000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.27 EUR
9000+0.25 EUR
15000+0.24 EUR
Mindestbestellmenge: 3000
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ZXMN10B08E6TA ZXMN10B08E6.pdf
ZXMN10B08E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
auf Bestellung 306000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
6000+0.44 EUR
9000+0.41 EUR
Mindestbestellmenge: 3000
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ZXM41N10FTA ZXM41N10F.pdf
ZXM41N10FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
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ZXMP10A18GTA ZXMP10A18G.pdf
ZXMP10A18GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 12640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.26 EUR
2000+1.17 EUR
3000+1.15 EUR
Mindestbestellmenge: 1000
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ZXMP10A17E6TA ZXMP10A17E6.pdf
ZXMP10A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 12615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.43 EUR
9000+0.41 EUR
Mindestbestellmenge: 3000
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ZXMP10A13FTA ZXMP10A13F.pdf
ZXMP10A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
auf Bestellung 351000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
6000+0.28 EUR
9000+0.27 EUR
15000+0.25 EUR
Mindestbestellmenge: 3000
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ZAMP001H6TA ZAMP001.pdf
ZAMP001H6TA
Hersteller: Diodes Incorporated
Description: AMPLIFIER 18DB GAIN LNA SC70-6
Produkt ist nicht verfügbar
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ZAMP003H6TA ZAMP003.pdf
ZAMP003H6TA
Hersteller: Diodes Incorporated
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Produkt ist nicht verfügbar
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ZLLS2000TA ZLLS2000.pdf
ZLLS2000TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2.2A SOT236
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: SOT-23-6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
auf Bestellung 314694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
20+0.92 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.55 EUR
Mindestbestellmenge: 13
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ZLLS1000TA ZLLS1000.pdf
ZLLS1000TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1.16A SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 30V, 1MHz
Current - Average Rectified (Io): 1.16A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
auf Bestellung 1137277 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
24+0.74 EUR
100+0.59 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 16
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ZLLS500TA ZLLS500.pdf
ZLLS500TA
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 700MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 30V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 218941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.58 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.33 EUR
Mindestbestellmenge: 19
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ZXMN2A02N8TA ZXMN2A02N8.pdf
ZXMN2A02N8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 8.3A 8-SOIC
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)
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ZXMN2A14FTA ZXMN2A14F.pdf
ZXMN2A14FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
auf Bestellung 95454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
26+0.68 EUR
100+0.46 EUR
500+0.35 EUR
Mindestbestellmenge: 19
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ZXMN3A14FTA ZXMN3A14F.pdf
ZXMN3A14FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 485495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
35+0.51 EUR
100+0.43 EUR
500+0.41 EUR
1000+0.39 EUR
Mindestbestellmenge: 25
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ZXM64N035GTA ZXM64N035G.pdf
ZXM64N035GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 35V 6.7A SOT223
Produkt ist nicht verfügbar
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ZXMP3A16GTA ZXMP3A16G.pdf
ZXMP3A16GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
auf Bestellung 1614065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
12+1.47 EUR
100+0.94 EUR
500+0.77 EUR
Mindestbestellmenge: 8
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ZXM64P035GTA ZXM64P035G.pdf
ZXM64P035GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 35V 3.8A SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A09GTA ZXMN6A09G.pdf
ZXMN6A09GTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
auf Bestellung 50721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+1.92 EUR
100+1.29 EUR
500+1.02 EUR
Mindestbestellmenge: 6
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ZXMN6A11ZTA ZXMN6A11Z.pdf
ZXMN6A11ZTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.7A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 40 V
auf Bestellung 68050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.01 EUR
100+0.7 EUR
500+0.58 EUR
Mindestbestellmenge: 16
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ZXMP6A18DN8TA ZXMP6A18DN8.pdf
ZXMP6A18DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 29511 Stücke:
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6+3.43 EUR
10+2.2 EUR
100+1.49 EUR
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ZXMP6A17GTA ZXMP6A17G.pdf
ZXMP6A17GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
auf Bestellung 66184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
20+0.92 EUR
100+0.61 EUR
500+0.47 EUR
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ZXMP6A17DN8TA ZXMP6A17DN8.pdf
ZXMP6A17DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 9193 Stücke:
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Anzahl Preis
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
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ZXMP6A13GTA ZXMP6A13G.pdf
ZXMP6A13GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 416576 Stücke:
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Anzahl Preis
10+1.87 EUR
15+1.17 EUR
100+0.77 EUR
500+0.6 EUR
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ZXMP6A17E6TA ZXMP6A17E6.pdf
ZXMP6A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
21+0.87 EUR
100+0.57 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 14
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ZXMP6A13FTA ZXMP6A13F.pdf
ZXMP6A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 900mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 219 pF @ 30 V
auf Bestellung 288508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
28+0.63 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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ZXMN10B08E6TA ZXMN10B08E6.pdf
ZXMN10B08E6TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
auf Bestellung 308033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
17+1.05 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.52 EUR
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ZXM41N10FTA ZXM41N10F.pdf
ZXM41N10FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT23-3
Produkt ist nicht verfügbar
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ZXMP10A18GTA ZXMP10A18G.pdf
ZXMP10A18GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 12833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
10+2.55 EUR
100+1.75 EUR
500+1.41 EUR
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ZXMP10A17E6TA ZXMP10A17E6.pdf
ZXMP10A17E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 1.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
auf Bestellung 13237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 11
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ZXMP10A13FTA ZXMP10A13F.pdf
ZXMP10A13FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
auf Bestellung 351400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
22+0.81 EUR
100+0.53 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 16
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ZAMP001H6TA ZAMP001.pdf
ZAMP001H6TA
Hersteller: Diodes Incorporated
Description: AMPLIFIER 18DB GAIN LNA SC70-6
auf Bestellung 2601 Stücke:
Lieferzeit 10-14 Tag (e)
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ZAMP002H6TA ZAMP002.pdf
ZAMP002H6TA
Hersteller: Diodes Incorporated
Description: IC AMP DBS 800MHZ-2.5GHZ SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 800MHz ~ 2.5GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 25dB
Current - Supply: 21mA ~ 24mA
Noise Figure: 7dB
P1dB: 7dbm
Test Frequency: 950MHz ~ 2.15GHz
Supplier Device Package: SC-70-6
auf Bestellung 2548 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
22+0.81 EUR
25+0.76 EUR
100+0.71 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.65 EUR
Mindestbestellmenge: 18
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BAT54ST-7 BAT54T_AT_CT_ST.pdf
BAT54ST-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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SD103ATW-7 SD103ATW.pdf
SD103ATW-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
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MMBD3004BRM-7
MMBD3004BRM-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 225MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Produkt ist nicht verfügbar
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2N7002T-7 ds30301.pdf
2N7002T-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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BSS8402DW-7 ds30380.pdf
BSS8402DW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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SDM10M45SD-7 SDM10M45SD.pdf
SDM10M45SD-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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BAV199T-7 BAS116T%2CBAW156T%2CBAV170T%2CBAV199T_Nov2005.pdf
BAV199T-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 125MA SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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SBM340-13 ds30362.pdf
SBM340-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A POWERMITE3
Produkt ist nicht verfügbar
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SBM540-13 ds30297.pdf
SBM540-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A POWERMITE3
Packaging: Tape & Reel (TR)
Package / Case: Powermite®3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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TB0640H-13 ds30360.pdf
TB0640H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 58V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 77V
Voltage - Off State: 58V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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TB0640L-13 ds30359.pdf
TB0640L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
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TB0720H-13 ds30360.pdf
TB0720H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 400A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 200pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
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TB1100M-13 TB0640M-TB3500M.pdf
TB1100M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 90V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TB1300M-13 TB0640M-TB3500M.pdf
TB1300M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 120V 250A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 120V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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TB1800L-13 ds30359.pdf
TB1800L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
Produkt ist nicht verfügbar
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TB2300L-13 TB0640L~TB3500L.pdf
TB2300L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 150A DO214AA
Produkt ist nicht verfügbar
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TB3100M-13 TB0640M-TB3500M.pdf
TB3100M-13
Hersteller: Diodes Incorporated
Description: THYRISTOR 275V 250A DO214AA
Produkt ist nicht verfügbar
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TB3500H-13 ds30360.pdf
TB3500H-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BIDIR 100A SMB
Produkt ist nicht verfügbar
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TB3500L-13 ds30359.pdf
TB3500L-13
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BI-DIR 30A SMB
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BAT54ST-7 BAT54T_AT_CT_ST.pdf
BAT54ST-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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SD103ATW-7 SD103ATW.pdf
SD103ATW-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 175MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 175mA
Supplier Device Package: SOT-363
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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2N7002T-7 ds30301.pdf
2N7002T-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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BSS8402DW-7 ds30380.pdf
BSS8402DW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Discontinued at Digi-Key
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SDM10M45SD-7 SDM10M45SD.pdf
SDM10M45SD-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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BAV199T-7 BAS116T%2CBAW156T%2CBAV170T%2CBAV199T_Nov2005.pdf
BAV199T-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 125MA SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 125mA (DC)
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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