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BGA715L7E6327XTSA1 BGA715L7E6327XTSA1 Infineon Technologies BGA715L7.pdf Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGA771L16E6327XTSA1 BGA771L16E6327XTSA1 Infineon Technologies BGA771L16.pdf Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 3.4mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSLP-16-1
Produkt ist nicht verfügbar
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BGM681L11E6327XT BGM681L11E6327XT Infineon Technologies BGM681L11.pdf Description: IC GPS FRONT-END 3.6V TSLP11-1
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Frequency: 1575MHz
RF Type: GPS
Supplier Device Package: PG-TSLP-11-1
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DSL70E6327HTSA1 DSL70E6327HTSA1 Infineon Technologies dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007 Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
Part Status: Active
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ESD0P4RFLE6327XTSA1 ESD0P4RFLE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 50VWM 9VC PGTSLP47
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-TSLP-4-7
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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ESD3V3U1U-02LRH E6327 ESD3V3U1U-02LRH E6327 Infineon Technologies ESD3V3U1U.pdf Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD5V3U1U-02LRH E6327 ESD5V3U1U-02LRH E6327 Infineon Technologies ESD5V3U1U.pdf Description: TVS DIODE 5.3VWM 28VC TSLP-2-7
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-7
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD5V3U1U-02LS E6327 ESD5V3U1U-02LS E6327 Infineon Technologies ESD5V3U1U.pdf Description: TVS DIODE 5.3VWM 28VC PGTSSLP21
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD5V3U2U-03F E6327 ESD5V3U2U-03F E6327 Infineon Technologies esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Description: TVS DIODE 5.3VWM 15VC TSFP-3
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: PG-TSFP-3
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD5V3U2U03LRHE6327XTMA1 ESD5V3U2U03LRHE6327XTMA1 Infineon Technologies esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Description: TVS DIODE 5.3VWM 15V PGTSLP37
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-3-7
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 30000 Stücke:
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15000+0.23 EUR
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ESD5V3U4RRSE6327HTSA1 ESD5V3U4RRSE6327HTSA1 Infineon Technologies ESD5V3U4RRS.pdf Description: TVS DIODE 5.3VWM 15VC PGSOT363PO
Unidirectional Channels: 4
Supplier Device Package: PG-SOT363-PO
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: Yes
Power - Peak Pulse: 50W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.3V
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 Infineon Technologies bc817su.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115474bf91a19fd Description: TRANS NPN 45V 0.5A SC-74
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BGM681L11E6327XT BGM681L11E6327XT Infineon Technologies BGM681L11.pdf Description: IC GPS FRONT-END 3.6V TSLP11-1
Supplier Device Package: PG-TSLP-11-1
RF Type: GPS
Frequency: 1575MHz
Package / Case: 10-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
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6+4 EUR
10+3.5 EUR
25+3.38 EUR
100+3.24 EUR
250+3.17 EUR
500+3.12 EUR
1000+3.08 EUR
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DSL70E6327HTSA1 DSL70E6327HTSA1 Infineon Technologies dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007 Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
Part Status: Active
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500+0.56 EUR
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ESD3V3U1U-02LRH E6327 ESD3V3U1U-02LRH E6327 Infineon Technologies ESD3V3U1U.pdf Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-7
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1GHz
Produkt ist nicht verfügbar
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ESD5V3U1U-02LRH E6327 ESD5V3U1U-02LRH E6327 Infineon Technologies ESD5V3U1U.pdf Description: TVS DIODE 5.3VWM 28VC TSLP-2-7
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-7
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESD5V3U1U-02LS E6327 ESD5V3U1U-02LS E6327 Infineon Technologies ESD5V3U1U.pdf Description: TVS DIODE 5.3VWM 28VC PGTSSLP21
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESD5V3U2U03LRHE6327XTMA1 ESD5V3U2U03LRHE6327XTMA1 Infineon Technologies esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Description: TVS DIODE 5.3VWM 15V PGTSLP37
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-3-7
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Not For New Designs
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17+1.26 EUR
27+0.77 EUR
50+0.57 EUR
100+0.5 EUR
500+0.38 EUR
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BAS3010A03WE6327HTSA1 BAS3010A03WE6327HTSA1 Infineon Technologies bas3010aseries.pdf?folderId=db3a304412b407950112b431b9b25550&fileId=db3a30431ddc9372011dfbc50f231c06 Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS3010B03WE6327HTSA1 BAS3010B03WE6327HTSA1 Infineon Technologies bas3010bseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313e278750113e29a03a70005 Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Produkt ist nicht verfügbar
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BAT240AE6327HTSA1 BAT240AE6327HTSA1 Infineon Technologies BAT240_10-4-07.pdf Description: DIODE ARR SCHOT 240V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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BCX6825E6327HTSA1 BCX6825E6327HTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
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ESD5V0S1U03WE6327HTSA1 ESD5V0S1U03WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 5VWM 14VC PGSOD3233D
Supplier Device Package: PG-SOD323-3D
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 40A (8/20µs)
Capacitance @ Frequency: 430pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 5.5V
Unidirectional Channels: 1
Produkt ist nicht verfügbar
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ESD5V0S2U06E6327HTSA1 ESD5V0S2U06E6327HTSA1 Infineon Technologies esd5v0sseries.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d01148839aaf20d03 Description: TVS DIODE 5VWM 14VC SOT23
Produkt ist nicht verfügbar
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ESD5V0S5USE6327HTSA1 ESD5V0S5USE6327HTSA1 Infineon Technologies esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04 Description: TVS DIODE 5VWM 13VC SOT363
Produkt ist nicht verfügbar
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IRF6218STRLPBF IRF6218STRLPBF Infineon Technologies irf6218spbf.pdf?fileId=5546d462533600a4015355e79f5e19e2 Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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IRFH5053TRPBF IRFH5053TRPBF Infineon Technologies irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2 Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
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IRFR4615TRLPBF IRFR4615TRLPBF Infineon Technologies IRFR4615TRLPBF.pdf Description: MOSFET N-CH 150V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Produkt ist nicht verfügbar
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IRFR4620TRLPBF IRFR4620TRLPBF Infineon Technologies irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7 Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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IRFS4620TRLPBF IRFS4620TRLPBF Infineon Technologies irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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IRFS5620TRLPBF IRFS5620TRLPBF Infineon Technologies IRFS(L)5620.pdf Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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IRFSL5620PBF IRFSL5620PBF Infineon Technologies IRFS(L)5620.pdf Description: MOSFET N-CH 200V 24A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRFU4620PBF IRFU4620PBF Infineon Technologies irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7 description Description: MOSFET N-CH 200V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRLS3036TRL7PP IRLS3036TRL7PP Infineon Technologies irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
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IRLSL3036PBF IRLSL3036PBF Infineon Technologies irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d Description: MOSFET N-CH 60V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH5053TRPBF IRFH5053TRPBF Infineon Technologies irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2 Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
auf Bestellung 6455 Stücke:
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4+5.37 EUR
10+3.46 EUR
100+2.38 EUR
500+1.92 EUR
1000+1.77 EUR
2000+1.64 EUR
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IRFR4615TRLPBF IRFR4615TRLPBF Infineon Technologies IRFR4615TRLPBF.pdf Description: MOSFET N-CH 150V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 117 Stücke:
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5+4.57 EUR
10+2.93 EUR
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IRFR4620TRLPBF IRFR4620TRLPBF Infineon Technologies irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7 Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
auf Bestellung 17300 Stücke:
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50+2.39 EUR
100+2.15 EUR
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IRFS4620TRLPBF IRFS4620TRLPBF Infineon Technologies irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
auf Bestellung 11200 Stücke:
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IRFS5620TRLPBF IRFS5620TRLPBF Infineon Technologies IRFS(L)5620.pdf Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRLS3036TRL7PP IRLS3036TRL7PP Infineon Technologies irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
auf Bestellung 1896 Stücke:
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TLE4906KHTSA1 TLE4906KHTSA1 Infineon Technologies Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4946KHTSA1 TLE4946KHTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19mT Trip, -19mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE4966KHTSA1 TLE4966KHTSA1 Infineon Technologies TLE4966K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc945ed46383 Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49762KHTSA1 TLE49762KHTSA1 Infineon Technologies Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c Description: MAGNETIC SWITCH UNIPOLAR SC59
Produkt ist nicht verfügbar
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ESD0P2RF02LSE6327XTSA1 ESD0P2RF02LSE6327XTSA1 Infineon Technologies ESD0P2RF.pdf Description: TVS DIODE 5.3VWM 21VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Produkt ist nicht verfügbar
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 Infineon Technologies bas3007aseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a3043156fd5730115a286aa19083b Description: BRIDGE RECT 1P 30V 900MA SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 Infineon Technologies bas4002aseries.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304329a0f6ee0129a6dc9f802b68 Description: BRIDGE RECT 1P 40V 200MA SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 200 mA
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
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3000+0.25 EUR
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BC817K25E6327HTSA1 BC817K25E6327HTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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6000+0.11 EUR
9000+0.093 EUR
30000+0.09 EUR
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BGA622E6820HTSA1 BGA622E6820HTSA1 Infineon Technologies BGA622.pdf Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 Infineon Technologies bas3007aseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a3043156fd5730115a286aa19083b Description: BRIDGE RECT 1P 30V 900MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 50513 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.93 EUR
18+1.19 EUR
50+0.88 EUR
100+0.79 EUR
500+0.6 EUR
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 Infineon Technologies bas4002aseries.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304329a0f6ee0129a6dc9f802b68 Description: BRIDGE RECT 1P 40V 200MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 200 mA
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 23316 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
50+0.42 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.35 EUR
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BC817K25E6327HTSA1 BC817K25E6327HTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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Lieferzeit 10-14 Tag (e)
30+0.71 EUR
43+0.49 EUR
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500+0.2 EUR
1000+0.14 EUR
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BGA622E6820HTSA1 BGA622E6820HTSA1 Infineon Technologies BGA622.pdf Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BDP949E6327HTSA1 BDP949E6327HTSA1 Infineon Technologies bdp947_bdp949_bdp953.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156147b63b1f55 Description: TRANS NPN 60V 3A PG-SOT223-4-10
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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BFP182WE6327HTSA1 BFP182WE6327HTSA1 Infineon Technologies INFNS10735-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 BFP183E7764HTSA1 Infineon Technologies Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907 Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
auf Bestellung 18 Stücke:
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BFP193E6327HTSA1 BFP193E6327HTSA1 Infineon Technologies bfp193.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142674fdc3061b Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Produkt ist nicht verfügbar
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BFP196E6327HTSA1 BFP196E6327HTSA1 Infineon Technologies Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723 Description: RF TRANS NPN 12V 7.5GHZ SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Produkt ist nicht verfügbar
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BFR181E6327HTSA1 BFR181E6327HTSA1 Infineon Technologies bfr181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268848380638 Description: RF TRANS NPN 12V 8GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
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Lieferzeit 10-14 Tag (e)
38+0.57 EUR
54+0.39 EUR
60+0.35 EUR
100+0.3 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
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BGA715L7E6327XTSA1 BGA715L7.pdf
BGA715L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGA771L16E6327XTSA1 BGA771L16.pdf
BGA771L16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 3.4mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSLP-16-1
Produkt ist nicht verfügbar
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BGM681L11E6327XT BGM681L11.pdf
BGM681L11E6327XT
Hersteller: Infineon Technologies
Description: IC GPS FRONT-END 3.6V TSLP11-1
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Frequency: 1575MHz
RF Type: GPS
Supplier Device Package: PG-TSLP-11-1
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+2.94 EUR
Mindestbestellmenge: 5000 Stücke
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DSL70E6327HTSA1 dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007
DSL70E6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
Part Status: Active
auf Bestellung 4190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.43 EUR
Mindestbestellmenge: 3000 Stücke
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ESD0P4RFLE6327XTSA1 fundamentals-of-power-semiconductors
ESD0P4RFLE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 50VWM 9VC PGTSLP47
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-TSLP-4-7
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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ESD3V3U1U-02LRH E6327 ESD3V3U1U.pdf
ESD3V3U1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD5V3U1U-02LRH E6327 ESD5V3U1U.pdf
ESD5V3U1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC TSLP-2-7
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-7
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD5V3U1U-02LS E6327 ESD5V3U1U.pdf
ESD5V3U1U-02LS E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC PGTSSLP21
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD5V3U2U-03F E6327 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
ESD5V3U2U-03F E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC TSFP-3
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: PG-TSFP-3
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD5V3U2U03LRHE6327XTMA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
ESD5V3U2U03LRHE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 15V PGTSLP37
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-3-7
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15000+0.23 EUR
Mindestbestellmenge: 15000 Stücke
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ESD5V3U4RRSE6327HTSA1 ESD5V3U4RRS.pdf
ESD5V3U4RRSE6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC PGSOT363PO
Unidirectional Channels: 4
Supplier Device Package: PG-SOT363-PO
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Power Line Protection: Yes
Power - Peak Pulse: 50W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 6.3V
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 bc817su.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115474bf91a19fd
BC817SUE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SC-74
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
22+0.98 EUR
100+0.74 EUR
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1000+0.45 EUR
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BGM681L11E6327XT BGM681L11.pdf
BGM681L11E6327XT
Hersteller: Infineon Technologies
Description: IC GPS FRONT-END 3.6V TSLP11-1
Supplier Device Package: PG-TSLP-11-1
RF Type: GPS
Frequency: 1575MHz
Package / Case: 10-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9744 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
10+3.5 EUR
25+3.38 EUR
100+3.24 EUR
250+3.17 EUR
500+3.12 EUR
1000+3.08 EUR
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DSL70E6327HTSA1 dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007
DSL70E6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
Part Status: Active
auf Bestellung 5178 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
19+1.12 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.5 EUR
Mindestbestellmenge: 12 Stücke
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ESD3V3U1U-02LRH E6327 ESD3V3U1U.pdf
ESD3V3U1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-7
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1GHz
Produkt ist nicht verfügbar
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ESD5V3U1U-02LRH E6327 ESD5V3U1U.pdf
ESD5V3U1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC TSLP-2-7
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-7
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESD5V3U1U-02LS E6327 ESD5V3U1U.pdf
ESD5V3U1U-02LS E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC PGTSSLP21
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3U2U03LRHE6327XTMA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
ESD5V3U2U03LRHE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 15V PGTSLP37
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-3-7
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 43077 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
27+0.77 EUR
50+0.57 EUR
100+0.5 EUR
500+0.38 EUR
Mindestbestellmenge: 17 Stücke
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BAS3010A03WE6327HTSA1 bas3010aseries.pdf?folderId=db3a304412b407950112b431b9b25550&fileId=db3a30431ddc9372011dfbc50f231c06
BAS3010A03WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS3010B03WE6327HTSA1 bas3010bseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313e278750113e29a03a70005
BAS3010B03WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Produkt ist nicht verfügbar
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BAT240AE6327HTSA1 BAT240_10-4-07.pdf
BAT240AE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 240V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX6825E6327HTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6825E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Produkt ist nicht verfügbar
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ESD5V0S1U03WE6327HTSA1 fundamentals-of-power-semiconductors
ESD5V0S1U03WE6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 14VC PGSOD3233D
Supplier Device Package: PG-SOD323-3D
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 40A (8/20µs)
Capacitance @ Frequency: 430pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 5.5V
Unidirectional Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V0S2U06E6327HTSA1 esd5v0sseries.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d01148839aaf20d03
ESD5V0S2U06E6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 14VC SOT23
Produkt ist nicht verfügbar
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ESD5V0S5USE6327HTSA1 esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04
ESD5V0S5USE6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 13VC SOT363
Produkt ist nicht verfügbar
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IRF6218STRLPBF irf6218spbf.pdf?fileId=5546d462533600a4015355e79f5e19e2
IRF6218STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
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IRFH5053TRPBF irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2
IRFH5053TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.63 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4615TRLPBF IRFR4615TRLPBF.pdf
IRFR4615TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRFR4620TRLPBF irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7
IRFR4620TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.42 EUR
9000+1.31 EUR
Mindestbestellmenge: 3000 Stücke
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IRFS4620TRLPBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
IRFS4620TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
auf Bestellung 11200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.21 EUR
2400+1.98 EUR
Mindestbestellmenge: 800 Stücke
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IRFS5620TRLPBF IRFS(L)5620.pdf
IRFS5620TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL5620PBF IRFS(L)5620.pdf
IRFSL5620PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRFU4620PBF description irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7
IRFU4620PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.65 EUR
Mindestbestellmenge: 800 Stücke
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IRLSL3036PBF irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d
IRLSL3036PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH5053TRPBF irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2
IRFH5053TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
auf Bestellung 6455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.37 EUR
10+3.46 EUR
100+2.38 EUR
500+1.92 EUR
1000+1.77 EUR
2000+1.64 EUR
Mindestbestellmenge: 4 Stücke
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IRFR4615TRLPBF IRFR4615TRLPBF.pdf
IRFR4615TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.57 EUR
10+2.93 EUR
50+2.21 EUR
100+1.99 EUR
Mindestbestellmenge: 5 Stücke
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IRFR4620TRLPBF irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7
IRFR4620TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
auf Bestellung 17300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.88 EUR
10+3.14 EUR
50+2.39 EUR
100+2.15 EUR
500+1.73 EUR
Mindestbestellmenge: 5 Stücke
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IRFS4620TRLPBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
IRFS4620TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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10+4.13 EUR
50+3.18 EUR
100+2.87 EUR
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IRFS5620TRLPBF IRFS(L)5620.pdf
IRFS5620TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
auf Bestellung 1896 Stücke:
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3+9.78 EUR
10+6.5 EUR
50+5.08 EUR
100+4.63 EUR
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TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4946KHTSA1 fundamentals-of-power-semiconductors
TLE4946KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19mT Trip, -19mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.64 EUR
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TLE4966KHTSA1 TLE4966K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc945ed46383
TLE4966KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49762KHTSA1 Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c
TLE49762KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ESD0P2RF02LSE6327XTSA1 ESD0P2RF.pdf
ESD0P2RF02LSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Produkt ist nicht verfügbar
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BAS3007ARPPE6327HTSA1 bas3007aseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a3043156fd5730115a286aa19083b
BAS3007ARPPE6327HTSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 30V 900MA SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.46 EUR
9000+0.42 EUR
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BAS4002ARPPE6327HTSA1 bas4002aseries.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304329a0f6ee0129a6dc9f802b68
BAS4002ARPPE6327HTSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 40V 200MA SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 200 mA
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
3000+0.25 EUR
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BC817K25E6327HTSA1 4a-BC-817-40-E6433.pdf
BC817K25E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
6000+0.11 EUR
9000+0.093 EUR
30000+0.09 EUR
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BGA622E6820HTSA1 BGA622.pdf
BGA622E6820HTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BAS3007ARPPE6327HTSA1 bas3007aseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a3043156fd5730115a286aa19083b
BAS3007ARPPE6327HTSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 30V 900MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 50513 Stücke:
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AnzahlPrivatkunde
11+1.93 EUR
18+1.19 EUR
50+0.88 EUR
100+0.79 EUR
500+0.6 EUR
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BAS4002ARPPE6327HTSA1 bas4002aseries.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304329a0f6ee0129a6dc9f802b68
BAS4002ARPPE6327HTSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 40V 200MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 200 mA
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 23316 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
50+0.42 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.35 EUR
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BC817K25E6327HTSA1 4a-BC-817-40-E6433.pdf
BC817K25E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 73351 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
43+0.49 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.14 EUR
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BGA622E6820HTSA1 BGA622.pdf
BGA622E6820HTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BDP949E6327HTSA1 bdp947_bdp949_bdp953.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156147b63b1f55
BDP949E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 60V 3A PG-SOT223-4-10
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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BFP182WE6327HTSA1 INFNS10735-1.pdf?t.download=true&u=5oefqw
BFP182WE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907
BFP183E7764HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
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BFP193E6327HTSA1 bfp193.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142674fdc3061b
BFP193E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Produkt ist nicht verfügbar
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BFP196E6327HTSA1 Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723
BFP196E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Produkt ist nicht verfügbar
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BFR181E6327HTSA1 bfr181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268848380638
BFR181E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
auf Bestellung 9165 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
54+0.39 EUR
60+0.35 EUR
100+0.3 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
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