Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (127285) > Seite 117 nach 2122
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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PVAZ172NS-TPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 1A 0-60VSupplier Device Package: 8-SMD Load Current: 1 A Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.2VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads Packaging: Tape & Reel (TR) On-State Resistance (Max): 500 mOhms Voltage - Load: 0 V ~ 60 V Part Status: Active Approval Agency: UL Operating Temperature: -40°C ~ 85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7240TRPBF | Infineon Technologies |
Description: MOSFET P-CH 40V 10.5A 8SOInput Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6710S2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 12A DIRECTFETRds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric S1 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DirectFET™ Isometric S1 Vgs(th) (Max) @ Id: 2.4V @ 25µA Power Dissipation (Max): 1.8W (Ta), 15W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR2184STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7492TRPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 3.7A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR20153STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 150 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 200ns, 100ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.4V, 3V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPS1021RTRLPBF | Infineon Technologies |
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAKOutput Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Ratio - Input:Output: 1:1 Current - Output (Max): 4.3A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 28V (Max) Input Type: Non-Inverting Rds On (Typ): 20mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Part Status: Obsolete Fault Protection: Current Limiting (Fixed), Over Temperature Supplier Device Package: D-Pak |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR21844STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7854TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7494TRPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 5.1A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7853TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 8.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IR21571STRPBF | Infineon Technologies |
Description: IC BALLAST CNTRL 50.5KHZ 16SOICCurrent - Supply: 5.5 mA Dimming: No Supplier Device Package: 16-SOIC Voltage - Supply: 10.5V ~ 16.5V Operating Temperature: -40°C ~ 125°C Type: Ballast Controller Frequency: 45.5kHz ~ 50.5kHz Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR2086STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9.5V ~ 15V Supplier Device Package: 16-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6674TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 13.4A DIRECTFETVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DIRECTFET™ MZ Vgs(th) (Max) @ Id: 4.9V @ 100µA Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MZ Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 9600 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6715MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 34A DIRECTFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6725MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 28A DIRECTFETVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DIRECTFET™ MX Vgs(th) (Max) @ Id: 2.35V @ 100µA Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MX Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6785MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 3.4A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DIRECTFET™ MZ Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MZ Packaging: Tape & Reel (TR) |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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IR3622AMTRPBF | Infineon Technologies |
Description: IC REG CTRLR BUCK 32MLPQVoltage - Supply (Vcc/Vdd): 4.5V ~ 14.5V Topology: Buck Frequency - Switching: 200kHz ~ 600kHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Function: Step-Down Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Number of Outputs: 2 Clock Sync: Yes Duty Cycle (Max): 84% Output Phases: 2 Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking Synchronous Rectifier: Yes Supplier Device Package: 32-MLPQ (5x5) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR3621MTRPBF | Infineon Technologies |
Description: IC REG CTRLR BUCK 32MLPQ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR3084AMTRPBF | Infineon Technologies |
Description: IC CTLR XPHASE 28-MLPQSupplier Device Package: 28-MLPQ (5x5) Current - Supply: 14mA Applications: Processor Voltage - Supply: 9.5V ~ 16V Operating Temperature: 0°C ~ 100°C Mounting Type: Surface Mount Package / Case: 28-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR2130STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6727MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 32A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: DIRECTFET™ MX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRS20954STRPBF | Infineon Technologies |
Description: IC LINE DRIVER 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Line Driver Interface: Analog Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 18V Applications: Audio Systems Supplier Device Package: 16-SOIC Part Status: Obsolete Number of Channels: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR3651STRPBF | Infineon Technologies |
Description: IC REG CTRLR BUCK 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 400kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V Supplier Device Package: 14-SOIC Synchronous Rectifier: Yes Control Features: Current Limit, Enable, Soft Start Output Phases: 1 Duty Cycle (Max): 80% Clock Sync: Yes Number of Outputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRS20124STRPBF | Infineon Technologies |
Description: IC LINE DRIVER 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Line Driver Interface: Analog Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 18V Specifications: Class D Applications: Pre-Amplifier Supplier Device Package: 14-SOIC Part Status: Obsolete Number of Channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR3084UMTRPBF | Infineon Technologies |
Description: IC CTLR XPHASE 28-MLPQPackaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 100°C Voltage - Supply: 9.5V ~ 16V Applications: Processor Current - Supply: 14mA Supplier Device Package: 28-MLPQ (5x5) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IP1203TRPBF | Infineon Technologies |
Description: IC REG BUCK ADJUSTABLE 15A LGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPS1011RTRLPBF | Infineon Technologies |
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR21593STRPBF | Infineon Technologies |
Description: IC BALLAST CNTRL 230KHZ 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 30kHz ~ 230kHz Type: Ballast Controller Operating Temperature: -40°C ~ 125°C Voltage - Supply: 12V ~ 16.5V Supplier Device Package: 16-SOIC Dimming: Yes Part Status: Obsolete Current - Supply: 10 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR21592STRPBF | Infineon Technologies |
Description: IC BALLAST CNTRL 95KHZ 16SOICCurrent - Supply: 10 mA Part Status: Obsolete Dimming: Yes Supplier Device Package: 16-SOIC Voltage - Supply: 12V ~ 16.5V Operating Temperature: -40°C ~ 125°C Type: Ballast Controller Frequency: 18kHz ~ 95kHz Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR21141SSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 24SSOPDigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 2A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: IGBT Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 24ns, 7ns Supplier Device Package: 24-SSOP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 11.5V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SSOP (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR21381QPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 64MQFP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 660 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IP1201TRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ SGL/DL 159BGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IP1202TRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ SGL/DL 161BGAVoltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 5.5V Voltage - Output (Max): 5V Synchronous Rectifier: Yes Supplier Device Package: 161-BGA Power Block (15.5x9.25) Topology: Buck Voltage - Input (Max): 13.2V Frequency - Switching: 170kHz ~ 460kHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 30A, 15A Function: Step-Down Number of Outputs: 1 or 2 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 161-BBGA Power Module Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IP2002TRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 30A 133BGAVoltage - Output (Min/Fixed): 0.9V Voltage - Input (Min): 3V Voltage - Output (Max): 3.3V Synchronous Rectifier: Yes Supplier Device Package: 133-BGA Power Block (11x11) Topology: Buck Voltage - Input (Max): 13.2V Frequency - Switching: 150kHz ~ 1MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 30A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 133-BFBGA Power Module Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR2214SSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 24SSOPLogic Voltage - VIL, VIH: 0.8V, 2V Gate Type: IGBT Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 24ns, 7ns Supplier Device Package: 24-SSOP High Side Voltage - Max (Bootstrap): 1200 V Input Type: Non-Inverting Voltage - Supply: 11.5V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SSOP (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 2A, 3A |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IR22141SSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 24SSOPPackaging: Tape & Reel (TR) Package / Case: 24-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 11.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 24-SSOP Rise / Fall Time (Typ): 24ns, 7ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, 3A Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IP2003ATRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 40A LGA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IR22381QPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 64MQFPDigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 350mA, 540mA Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: IGBT Number of Drivers: 6 Driven Configuration: Half-Bridge Channel Type: 3-Phase Rise / Fall Time (Typ): 80ns, 25ns Supplier Device Package: 64-MQFP (20x14) High Side Voltage - Max (Bootstrap): 1200 V Input Type: Inverting, Non-Inverting Voltage - Supply: 12.5V ~ 20V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 64-BQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR2238QPBF | Infineon Technologies |
Description: IC MOTOR DRIVER 12.5V-20V 64MQFPMounting Type: Surface Mount Package / Case: 64-BQFP Packaging: Tray Part Status: Active Motor Type - AC, DC: AC, Synchronous Supplier Device Package: 64-MQFP (20x14) Technology: IGBT Applications: General Purpose Voltage - Supply: 12.5V ~ 20V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -20°C ~ 115°C (TA) Interface: Parallel Function: Controller - Commutation, Direction Management |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ040N04LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 18A/40A 8TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 36µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ097N04LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 12A/40A 8TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ042N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 40A TSDSON-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ105N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 11A/40A 8TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 14µA Supplier Device Package: PG-TSDSON-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ165N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 8.9A/31A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 10µA Supplier Device Package: PG-TSDSON-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BS7067N06LS3G | Infineon Technologies |
Description: MOSFET N-CH 60V 14A/20A 8TSDSONInput Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 2.2V @ 35µA Power Dissipation (Max): 2.1W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ100N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 11A/20A 8TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 23µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ076N06NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 20A 8TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ110N06NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 20A 8TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 23µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ123N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 10A/40A 8TSDSONSupplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 3.5V @ 33µA Power Dissipation (Max): 2.1W (Ta), 66W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ040N04LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 18A/40A 8TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 36µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ097N04LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 12A/40A 8TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V |
auf Bestellung 857 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ042N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 40A TSDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSZ100N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 11A/20A 8TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 23µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V |
auf Bestellung 3357 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ110N06NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 20A 8TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 23µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V |
auf Bestellung 867 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ123N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 10A/40A 8TSDSONPower Dissipation (Max): 2.1W (Ta), 66W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) FET Type: N-Channel Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 3.5V @ 33µA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 36285 Stücke: Lieferzeit 10-14 Tag (e) |
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| KP125 | Infineon Technologies |
Description: IC PRESSURE SENSOR BAROM DSOF-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| KP125 | Infineon Technologies |
Description: IC PRESSURE SENSOR BAROM DSOF-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IR2151SPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICCurrent - Peak Output (Source, Sink): 125mA, 250mA Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 80ns, 40ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: RC Input Circuit Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY7C1041DV33-10BVJXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 48VFBGA Memory Organization: 256K x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Part Status: Obsolete Supplier Device Package: 48-VFBGA (6x8) Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 48-VFBGA DigiKey Programmable: Not Verified Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PVAZ172NS-TPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Supplier Device Package: 8-SMD
Load Current: 1 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Description: SSR RELAY SPST-NO 1A 0-60V
Supplier Device Package: 8-SMD
Load Current: 1 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7240TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 10.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 10.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF6710S2TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 12A DIRECTFET
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
Description: MOSFET N-CH 25V 12A DIRECTFET
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2184STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7492TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 3.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IR20153STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.4V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.4V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IPS1021RTRLPBF |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Ratio - Input:Output: 1:1
Current - Output (Max): 4.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D-Pak
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Ratio - Input:Output: 1:1
Current - Output (Max): 4.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D-Pak
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IR21844STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7854TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Description: MOSFET N-CH 80V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 1.05 EUR |
| IRF7494TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5.1A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 5.1A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7853TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 1.15 EUR |
| IR21571STRPBF |
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Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 50.5KHZ 16SOIC
Current - Supply: 5.5 mA
Dimming: No
Supplier Device Package: 16-SOIC
Voltage - Supply: 10.5V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 45.5kHz ~ 50.5kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC BALLAST CNTRL 50.5KHZ 16SOIC
Current - Supply: 5.5 mA
Dimming: No
Supplier Device Package: 16-SOIC
Voltage - Supply: 10.5V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 45.5kHz ~ 50.5kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2086STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 15V
Supplier Device Package: 16-SOIC
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 15V
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF6674TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4800+ | 2.53 EUR |
| IRF6715MTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 34A DIRECTFET
Description: MOSFET N-CH 25V 34A DIRECTFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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| IRF6725MTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Description: MOSFET N-CH 30V 28A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF6785MTRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4800+ | 1.81 EUR |
| IR3622AMTRPBF |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Voltage - Supply (Vcc/Vdd): 4.5V ~ 14.5V
Topology: Buck
Frequency - Switching: 200kHz ~ 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 2
Clock Sync: Yes
Duty Cycle (Max): 84%
Output Phases: 2
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Synchronous Rectifier: Yes
Supplier Device Package: 32-MLPQ (5x5)
Description: IC REG CTRLR BUCK 32MLPQ
Voltage - Supply (Vcc/Vdd): 4.5V ~ 14.5V
Topology: Buck
Frequency - Switching: 200kHz ~ 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 2
Clock Sync: Yes
Duty Cycle (Max): 84%
Output Phases: 2
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Synchronous Rectifier: Yes
Supplier Device Package: 32-MLPQ (5x5)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| IR3621MTRPBF |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Description: IC REG CTRLR BUCK 32MLPQ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| IR3084AMTRPBF |
![]() |
Hersteller: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Supplier Device Package: 28-MLPQ (5x5)
Current - Supply: 14mA
Applications: Processor
Voltage - Supply: 9.5V ~ 16V
Operating Temperature: 0°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC CTLR XPHASE 28-MLPQ
Supplier Device Package: 28-MLPQ (5x5)
Current - Supply: 14mA
Applications: Processor
Voltage - Supply: 9.5V ~ 16V
Operating Temperature: 0°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| IR2130STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.22 EUR |
| 2000+ | 4.12 EUR |
| 3000+ | 4.07 EUR |
| IRF6727MTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V
Produkt ist nicht verfügbar
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| IRS20954STRPBF |
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Hersteller: Infineon Technologies
Description: IC LINE DRIVER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Channels: 2
Description: IC LINE DRIVER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Channels: 2
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| IR3651STRPBF |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 400kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 80%
Clock Sync: Yes
Number of Outputs: 1
Description: IC REG CTRLR BUCK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 400kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 80%
Clock Sync: Yes
Number of Outputs: 1
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| IRS20124STRPBF |
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Hersteller: Infineon Technologies
Description: IC LINE DRIVER 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Specifications: Class D
Applications: Pre-Amplifier
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Channels: 1
Description: IC LINE DRIVER 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Specifications: Class D
Applications: Pre-Amplifier
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Channels: 1
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| IR3084UMTRPBF |
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Hersteller: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
Produkt ist nicht verfügbar
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| IP1203TRPBF |
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Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 15A LGA
Description: IC REG BUCK ADJUSTABLE 15A LGA
Produkt ist nicht verfügbar
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| IPS1011RTRLPBF |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
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| IR21593STRPBF |
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Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 230KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 30kHz ~ 230kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 16.5V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
Description: IC BALLAST CNTRL 230KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 30kHz ~ 230kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 16.5V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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| IR21592STRPBF |
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Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 95KHZ 16SOIC
Current - Supply: 10 mA
Part Status: Obsolete
Dimming: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 12V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 95kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC BALLAST CNTRL 95KHZ 16SOIC
Current - Supply: 10 mA
Part Status: Obsolete
Dimming: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 12V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 95kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| IR21141SSTRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 2A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 24ns, 7ns
Supplier Device Package: 24-SSOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 2A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 24ns, 7ns
Supplier Device Package: 24-SSOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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| IR21381QPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64MQFP
Description: IC GATE DRVR HALF-BRIDGE 64MQFP
Produkt ist nicht verfügbar
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| IP1201TRPBF |
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Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ SGL/DL 159BGA
Description: IC REG BUCK ADJ SGL/DL 159BGA
Produkt ist nicht verfügbar
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| IP1202TRPBF |
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Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ SGL/DL 161BGA
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 5.5V
Voltage - Output (Max): 5V
Synchronous Rectifier: Yes
Supplier Device Package: 161-BGA Power Block (15.5x9.25)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 170kHz ~ 460kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A, 15A
Function: Step-Down
Number of Outputs: 1 or 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 161-BBGA Power Module
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ SGL/DL 161BGA
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 5.5V
Voltage - Output (Max): 5V
Synchronous Rectifier: Yes
Supplier Device Package: 161-BGA Power Block (15.5x9.25)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 170kHz ~ 460kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A, 15A
Function: Step-Down
Number of Outputs: 1 or 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 161-BBGA Power Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| IP2002TRPBF |
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Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A 133BGA
Voltage - Output (Min/Fixed): 0.9V
Voltage - Input (Min): 3V
Voltage - Output (Max): 3.3V
Synchronous Rectifier: Yes
Supplier Device Package: 133-BGA Power Block (11x11)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 150kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 133-BFBGA Power Module
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ 30A 133BGA
Voltage - Output (Min/Fixed): 0.9V
Voltage - Input (Min): 3V
Voltage - Output (Max): 3.3V
Synchronous Rectifier: Yes
Supplier Device Package: 133-BGA Power Block (11x11)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 150kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 133-BFBGA Power Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| IR2214SSTRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 24ns, 7ns
Supplier Device Package: 24-SSOP
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 3A
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 24ns, 7ns
Supplier Device Package: 24-SSOP
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 3A
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 7.6 EUR |
| IR22141SSTRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IP2003ATRPBF |
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Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 40A LGA
Description: IC REG BUCK ADJ 40A LGA
Produkt ist nicht verfügbar
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| IR22381QPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64MQFP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 350mA, 540mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 80ns, 25ns
Supplier Device Package: 64-MQFP (20x14)
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Description: IC GATE DRVR HALF-BRIDGE 64MQFP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 350mA, 540mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 80ns, 25ns
Supplier Device Package: 64-MQFP (20x14)
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
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| IR2238QPBF |
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Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 12.5V-20V 64MQFP
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Part Status: Active
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 64-MQFP (20x14)
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 12.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -20°C ~ 115°C (TA)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Description: IC MOTOR DRIVER 12.5V-20V 64MQFP
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Part Status: Active
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 64-MQFP (20x14)
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 12.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -20°C ~ 115°C (TA)
Interface: Parallel
Function: Controller - Commutation, Direction Management
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| BSZ040N04LSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 18A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
Description: MOSFET N-CH 40V 18A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
Produkt ist nicht verfügbar
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| BSZ097N04LSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 12A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Description: MOSFET N-CH 40V 12A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Produkt ist nicht verfügbar
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| BSZ042N04NSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A TSDSON-8
Description: MOSFET N-CH 40V 40A TSDSON-8
Produkt ist nicht verfügbar
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| BSZ105N04NSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 11A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Description: MOSFET N-CH 40V 11A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ165N04NSGATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 8.9A/31A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
Description: MOSFET N-CH 40V 8.9A/31A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BS7067N06LS3G |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A/20A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 2.1W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 14A/20A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 2.1W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ100N06LS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ076N06NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ110N06NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ123N08NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.87 EUR |
| BSZ040N04LSGATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 18A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
Description: MOSFET N-CH 40V 18A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ097N04LSGATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Description: MOSFET N-CH 40V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 857 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.26 EUR |
| 15+ | 1.42 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| BSZ042N04NSGATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A TSDSON-8
Description: MOSFET N-CH 40V 40A TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ100N06LS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 3357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.02 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 2000+ | 0.89 EUR |
| BSZ110N06NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 867 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.24 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| BSZ123N08NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 36285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 10+ | 2.17 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.07 EUR |
| KP125 |
![]() |
Hersteller: Infineon Technologies
Description: IC PRESSURE SENSOR BAROM DSOF-8
Description: IC PRESSURE SENSOR BAROM DSOF-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KP125 |
![]() |
Hersteller: Infineon Technologies
Description: IC PRESSURE SENSOR BAROM DSOF-8
Description: IC PRESSURE SENSOR BAROM DSOF-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2151SPBF |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 125mA, 250mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 125mA, 250mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
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| CY7C1041DV33-10BVJXIT |
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Obsolete
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Obsolete
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH





























