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PVAZ172NS-TPBF PVAZ172NS-TPBF Infineon Technologies pvaz172.pdf Description: SSR RELAY SPST-NO 1A 0-60V
Supplier Device Package: 8-SMD
Load Current: 1 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Produkt ist nicht verfügbar
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IRF7240TRPBF IRF7240TRPBF Infineon Technologies irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2 Description: MOSFET P-CH 40V 10.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF6710S2TRPBF IRF6710S2TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 25V 12A DIRECTFET
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
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IR2184STRPBF IR2184STRPBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
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IRF7492TRPBF IRF7492TRPBF Infineon Technologies IRF7492PbF.pdf Description: MOSFET N-CH 200V 3.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR20153STRPBF IR20153STRPBF Infineon Technologies ir20153s.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.4V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPS1021RTRLPBF IPS1021RTRLPBF Infineon Technologies IPS1021(S,R)PbF.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Ratio - Input:Output: 1:1
Current - Output (Max): 4.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D-Pak
Produkt ist nicht verfügbar
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IR21844STRPBF IR21844STRPBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7854TRPBF IRF7854TRPBF Infineon Technologies irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29 Description: MOSFET N-CH 80V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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IRF7494TRPBF IRF7494TRPBF Infineon Technologies IRF7494PbF.pdf Description: MOSFET N-CH 150V 5.1A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IRF7853TRPBF IRF7853TRPBF Infineon Technologies irf7853pbf.pdf?fileId=5546d462533600a40153560c4d2f1d27 Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
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IR21571STRPBF IR21571STRPBF Infineon Technologies ir21571.pdf Description: IC BALLAST CNTRL 50.5KHZ 16SOIC
Current - Supply: 5.5 mA
Dimming: No
Supplier Device Package: 16-SOIC
Voltage - Supply: 10.5V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 45.5kHz ~ 50.5kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR2086STRPBF IR2086STRPBF Infineon Technologies Infineon-IR2086S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f76d18482b Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 15V
Supplier Device Package: 16-SOIC
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IRF6674TRPBF IRF6674TRPBF Infineon Technologies irf6674pbf.pdf?fileId=5546d462533600a4015355ec9f0d1a66 Description: MOSFET N-CH 60V 13.4A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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IRF6715MTRPBF IRF6715MTRPBF Infineon Technologies irf6715mpbf.pdf?fileId=5546d462533600a4015355ed0d221a82 Description: MOSFET N-CH 25V 34A DIRECTFET
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IRF6725MTRPBF IRF6725MTRPBF Infineon Technologies IRF6725M%28TR%29PBF.pdf Description: MOSFET N-CH 30V 28A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
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IRF6785MTRPBF IRF6785MTRPBF Infineon Technologies IRSDS09083-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 3.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
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IR3622AMTRPBF IR3622AMTRPBF Infineon Technologies IR3622AMPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Voltage - Supply (Vcc/Vdd): 4.5V ~ 14.5V
Topology: Buck
Frequency - Switching: 200kHz ~ 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 2
Clock Sync: Yes
Duty Cycle (Max): 84%
Output Phases: 2
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Synchronous Rectifier: Yes
Supplier Device Package: 32-MLPQ (5x5)
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IR3621MTRPBF IR3621MTRPBF Infineon Technologies IR3621(PbF).pdf Description: IC REG CTRLR BUCK 32MLPQ
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IR3084AMTRPBF IR3084AMTRPBF Infineon Technologies IR3084A.pdf Description: IC CTLR XPHASE 28-MLPQ
Supplier Device Package: 28-MLPQ (5x5)
Current - Supply: 14mA
Applications: Processor
Voltage - Supply: 9.5V ~ 16V
Operating Temperature: 0°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2130STRPBF IR2130STRPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
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IRF6727MTRPBF IRF6727MTRPBF Infineon Technologies irf6727mpbf.pdf?fileId=5546d462533600a4015355ed6a331a9a Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V
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IRS20954STRPBF IRS20954STRPBF Infineon Technologies IRS20954SPBF.pdf Description: IC LINE DRIVER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Channels: 2
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IR3651STRPBF IR3651STRPBF Infineon Technologies ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e Description: IC REG CTRLR BUCK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 400kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 80%
Clock Sync: Yes
Number of Outputs: 1
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IRS20124STRPBF IRS20124STRPBF Infineon Technologies IRS20124%28S%29PbF.pdf Description: IC LINE DRIVER 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Specifications: Class D
Applications: Pre-Amplifier
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Channels: 1
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IR3084UMTRPBF IR3084UMTRPBF Infineon Technologies IR3084U.pdf Description: IC CTLR XPHASE 28-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
Produkt ist nicht verfügbar
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IP1203TRPBF IP1203TRPBF Infineon Technologies IP1203PbF.pdf Description: IC REG BUCK ADJUSTABLE 15A LGA
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IPS1011RTRLPBF IPS1011RTRLPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
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IR21593STRPBF IR21593STRPBF Infineon Technologies IR21592%2C93%20%28S%29%20%28PbF%29.pdf Description: IC BALLAST CNTRL 230KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 30kHz ~ 230kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 16.5V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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IR21592STRPBF IR21592STRPBF Infineon Technologies IR21592%2C93%20%28S%29%20%28PbF%29.pdf Description: IC BALLAST CNTRL 95KHZ 16SOIC
Current - Supply: 10 mA
Part Status: Obsolete
Dimming: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 12V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 95kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR21141SSTRPBF IR21141SSTRPBF Infineon Technologies IR%2821%2C22%29141SSPBF.pdf Description: IC GATE DRVR HALF-BRIDGE 24SSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 2A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 24ns, 7ns
Supplier Device Package: 24-SSOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR21381QPBF IR21381QPBF Infineon Technologies ir21381q.pdf Description: IC GATE DRVR HALF-BRIDGE 64MQFP
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IP1201TRPBF IP1201TRPBF Infineon Technologies IP1201PbF.pdf Description: IC REG BUCK ADJ SGL/DL 159BGA
Produkt ist nicht verfügbar
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IP1202TRPBF IP1202TRPBF Infineon Technologies IP1202PbF.pdf Description: IC REG BUCK ADJ SGL/DL 161BGA
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 5.5V
Voltage - Output (Max): 5V
Synchronous Rectifier: Yes
Supplier Device Package: 161-BGA Power Block (15.5x9.25)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 170kHz ~ 460kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A, 15A
Function: Step-Down
Number of Outputs: 1 or 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 161-BBGA Power Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IP2002TRPBF IP2002TRPBF Infineon Technologies ip2002pbf.pdf Description: IC REG BUCK ADJ 30A 133BGA
Voltage - Output (Min/Fixed): 0.9V
Voltage - Input (Min): 3V
Voltage - Output (Max): 3.3V
Synchronous Rectifier: Yes
Supplier Device Package: 133-BGA Power Block (11x11)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 150kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 133-BFBGA Power Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2214SSTRPBF IR2214SSTRPBF Infineon Technologies Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 24ns, 7ns
Supplier Device Package: 24-SSOP
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 3A
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IR22141SSTRPBF IR22141SSTRPBF Infineon Technologies IR%2821%2C22%29141SSPBF.pdf Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP2003ATRPBF Infineon Technologies IP2003APbF.pdf Description: IC REG BUCK ADJ 40A LGA
Produkt ist nicht verfügbar
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IR22381QPBF IR22381QPBF Infineon Technologies ir21381q.pdf Description: IC GATE DRVR HALF-BRIDGE 64MQFP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 350mA, 540mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 80ns, 25ns
Supplier Device Package: 64-MQFP (20x14)
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IR2238QPBF IR2238QPBF Infineon Technologies Infineon-IR2238Q-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a6cd1d44aa3 Description: IC MOTOR DRIVER 12.5V-20V 64MQFP
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Part Status: Active
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 64-MQFP (20x14)
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 12.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -20°C ~ 115°C (TA)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Produkt ist nicht verfügbar
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BSZ040N04LSGATMA1 BSZ040N04LSGATMA1 Infineon Technologies BSZ040N04LSG_rev1.3.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643b9e30f067b Description: MOSFET N-CH 40V 18A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
Produkt ist nicht verfügbar
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BSZ097N04LSGATMA1 BSZ097N04LSGATMA1 Infineon Technologies BSZ097N04LSG_rev1.1.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643be1d53068c Description: MOSFET N-CH 40V 12A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Produkt ist nicht verfügbar
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BSZ042N04NSGATMA1 BSZ042N04NSGATMA1 Infineon Technologies BSZ042N04NSG.pdf Description: MOSFET N-CH 40V 40A TSDSON-8
Produkt ist nicht verfügbar
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BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 Infineon Technologies BSZ105N04NSG.pdf Description: MOSFET N-CH 40V 11A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Produkt ist nicht verfügbar
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BSZ165N04NSGATMA1 BSZ165N04NSGATMA1 Infineon Technologies BSZ165N04NSG.pdf Description: MOSFET N-CH 40V 8.9A/31A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
Produkt ist nicht verfügbar
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BS7067N06LS3G BS7067N06LS3G Infineon Technologies BSZ067N06LS3.pdf Description: MOSFET N-CH 60V 14A/20A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 2.1W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 Infineon Technologies BSZ100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb132c97000a Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ076N06NS3GATMA1 BSZ076N06NS3GATMA1 Infineon Technologies BSZ076N06NS3G.pdf Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ110N06NS3GATMA1 BSZ110N06NS3GATMA1 Infineon Technologies BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 Infineon Technologies BSZ123N08NS3G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e5ec96fdc0a00 Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 35000 Stücke:
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BSZ040N04LSGATMA1 BSZ040N04LSGATMA1 Infineon Technologies BSZ040N04LSG_rev1.3.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643b9e30f067b Description: MOSFET N-CH 40V 18A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
Produkt ist nicht verfügbar
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BSZ097N04LSGATMA1 BSZ097N04LSGATMA1 Infineon Technologies BSZ097N04LSG_rev1.1.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643be1d53068c Description: MOSFET N-CH 40V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
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10+2.26 EUR
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100+0.93 EUR
500+0.73 EUR
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BSZ042N04NSGATMA1 BSZ042N04NSGATMA1 Infineon Technologies BSZ042N04NSG.pdf Description: MOSFET N-CH 40V 40A TSDSON-8
Produkt ist nicht verfügbar
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BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 Infineon Technologies BSZ100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb132c97000a Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 3357 Stücke:
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7+3.19 EUR
11+2.02 EUR
100+1.36 EUR
500+1.06 EUR
1000+0.98 EUR
2000+0.89 EUR
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BSZ110N06NS3GATMA1 BSZ110N06NS3GATMA1 Infineon Technologies BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 867 Stücke:
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10+2.24 EUR
15+1.4 EUR
100+0.93 EUR
500+0.73 EUR
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BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 Infineon Technologies BSZ123N08NS3G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e5ec96fdc0a00 Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 36285 Stücke:
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7+3.39 EUR
10+2.17 EUR
100+1.46 EUR
500+1.15 EUR
1000+1.07 EUR
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KP125 Infineon Technologies KP125_V1+0_DS_Rev2+14.pdf Description: IC PRESSURE SENSOR BAROM DSOF-8
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KP125 Infineon Technologies KP125_V1+0_DS_Rev2+14.pdf Description: IC PRESSURE SENSOR BAROM DSOF-8
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IR2151SPBF IR2151SPBF Infineon Technologies ir2151.pdf description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 125mA, 250mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY7C1041DV33-10BVJXIT CY7C1041DV33-10BVJXIT Infineon Technologies Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Obsolete
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PVAZ172NS-TPBF pvaz172.pdf
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Supplier Device Package: 8-SMD
Load Current: 1 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
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IRF7240TRPBF irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 10.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF6710S2TRPBF IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 12A DIRECTFET
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
Produkt ist nicht verfügbar
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IR2184STRPBF ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7492TRPBF IRF7492PbF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR20153STRPBF ir20153s.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.4V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPS1021RTRLPBF IPS1021(S,R)PbF.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Ratio - Input:Output: 1:1
Current - Output (Max): 4.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D-Pak
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IR21844STRPBF ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7854TRPBF irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.05 EUR
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IRF7494TRPBF IRF7494PbF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5.1A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IRF7853TRPBF irf7853pbf.pdf?fileId=5546d462533600a40153560c4d2f1d27
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
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AnzahlPrivatkunde
4000+1.15 EUR
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IR21571STRPBF ir21571.pdf
Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 50.5KHZ 16SOIC
Current - Supply: 5.5 mA
Dimming: No
Supplier Device Package: 16-SOIC
Voltage - Supply: 10.5V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 45.5kHz ~ 50.5kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR2086STRPBF Infineon-IR2086S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f76d18482b
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 15V
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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IRF6674TRPBF irf6674pbf.pdf?fileId=5546d462533600a4015355ec9f0d1a66
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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4800+2.53 EUR
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IRF6715MTRPBF irf6715mpbf.pdf?fileId=5546d462533600a4015355ed0d221a82
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 34A DIRECTFET
Produkt ist nicht verfügbar
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IRF6725MTRPBF IRF6725M%28TR%29PBF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Produkt ist nicht verfügbar
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IRF6785MTRPBF IRSDS09083-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
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4800+1.81 EUR
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IR3622AMTRPBF IR3622AMPbF.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Voltage - Supply (Vcc/Vdd): 4.5V ~ 14.5V
Topology: Buck
Frequency - Switching: 200kHz ~ 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 2
Clock Sync: Yes
Duty Cycle (Max): 84%
Output Phases: 2
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Synchronous Rectifier: Yes
Supplier Device Package: 32-MLPQ (5x5)
Produkt ist nicht verfügbar
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IR3621MTRPBF IR3621(PbF).pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Produkt ist nicht verfügbar
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IR3084AMTRPBF IR3084A.pdf
Hersteller: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Supplier Device Package: 28-MLPQ (5x5)
Current - Supply: 14mA
Applications: Processor
Voltage - Supply: 9.5V ~ 16V
Operating Temperature: 0°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2130STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+4.22 EUR
2000+4.12 EUR
3000+4.07 EUR
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IRF6727MTRPBF irf6727mpbf.pdf?fileId=5546d462533600a4015355ed6a331a9a
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V
Produkt ist nicht verfügbar
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IRS20954STRPBF IRS20954SPBF.pdf
Hersteller: Infineon Technologies
Description: IC LINE DRIVER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
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IR3651STRPBF ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 400kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 80%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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IRS20124STRPBF IRS20124%28S%29PbF.pdf
Hersteller: Infineon Technologies
Description: IC LINE DRIVER 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Specifications: Class D
Applications: Pre-Amplifier
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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IR3084UMTRPBF IR3084U.pdf
Hersteller: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
Produkt ist nicht verfügbar
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IP1203TRPBF IP1203PbF.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 15A LGA
Produkt ist nicht verfügbar
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IPS1011RTRLPBF Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Produkt ist nicht verfügbar
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IR21593STRPBF IR21592%2C93%20%28S%29%20%28PbF%29.pdf
Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 230KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 30kHz ~ 230kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 16.5V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
Produkt ist nicht verfügbar
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IR21592STRPBF IR21592%2C93%20%28S%29%20%28PbF%29.pdf
Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 95KHZ 16SOIC
Current - Supply: 10 mA
Part Status: Obsolete
Dimming: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 12V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 95kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR21141SSTRPBF IR%2821%2C22%29141SSPBF.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 2A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 24ns, 7ns
Supplier Device Package: 24-SSOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR21381QPBF ir21381q.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64MQFP
Produkt ist nicht verfügbar
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IP1201TRPBF IP1201PbF.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ SGL/DL 159BGA
Produkt ist nicht verfügbar
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IP1202TRPBF IP1202PbF.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ SGL/DL 161BGA
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 5.5V
Voltage - Output (Max): 5V
Synchronous Rectifier: Yes
Supplier Device Package: 161-BGA Power Block (15.5x9.25)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 170kHz ~ 460kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A, 15A
Function: Step-Down
Number of Outputs: 1 or 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 161-BBGA Power Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IP2002TRPBF ip2002pbf.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A 133BGA
Voltage - Output (Min/Fixed): 0.9V
Voltage - Input (Min): 3V
Voltage - Output (Max): 3.3V
Synchronous Rectifier: Yes
Supplier Device Package: 133-BGA Power Block (11x11)
Topology: Buck
Voltage - Input (Max): 13.2V
Frequency - Switching: 150kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 30A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 133-BFBGA Power Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2214SSTRPBF Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 24ns, 7ns
Supplier Device Package: 24-SSOP
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 3A
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+7.6 EUR
Mindestbestellmenge: 2000 Stücke
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IR22141SSTRPBF IR%2821%2C22%29141SSPBF.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP2003ATRPBF IP2003APbF.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 40A LGA
Produkt ist nicht verfügbar
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IR22381QPBF ir21381q.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64MQFP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 350mA, 540mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 80ns, 25ns
Supplier Device Package: 64-MQFP (20x14)
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IR2238QPBF Infineon-IR2238Q-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a6cd1d44aa3
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 12.5V-20V 64MQFP
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Part Status: Active
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 64-MQFP (20x14)
Technology: IGBT
Applications: General Purpose
Voltage - Supply: 12.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -20°C ~ 115°C (TA)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Produkt ist nicht verfügbar
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BSZ040N04LSGATMA1 BSZ040N04LSG_rev1.3.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643b9e30f067b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 18A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
Produkt ist nicht verfügbar
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BSZ097N04LSGATMA1 BSZ097N04LSG_rev1.1.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643be1d53068c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 12A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Produkt ist nicht verfügbar
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BSZ042N04NSGATMA1 BSZ042N04NSG.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A TSDSON-8
Produkt ist nicht verfügbar
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BSZ105N04NSGATMA1 BSZ105N04NSG.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 11A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Produkt ist nicht verfügbar
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BSZ165N04NSGATMA1 BSZ165N04NSG.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 8.9A/31A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
Produkt ist nicht verfügbar
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BS7067N06LS3G BSZ067N06LS3.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A/20A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 2.1W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BSZ100N06LS3GATMA1 BSZ100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb132c97000a
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ076N06NS3GATMA1 BSZ076N06NS3G.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ123N08NS3GATMA1 BSZ123N08NS3G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e5ec96fdc0a00
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.87 EUR
Mindestbestellmenge: 5000 Stücke
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BSZ040N04LSGATMA1 BSZ040N04LSG_rev1.3.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643b9e30f067b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 18A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 36µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 20 V
Produkt ist nicht verfügbar
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BSZ097N04LSGATMA1 BSZ097N04LSG_rev1.1.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643be1d53068c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 12A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 857 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.26 EUR
15+1.42 EUR
100+0.93 EUR
500+0.73 EUR
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BSZ042N04NSGATMA1 BSZ042N04NSG.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A TSDSON-8
Produkt ist nicht verfügbar
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BSZ100N06LS3GATMA1 BSZ100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb132c97000a
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 3357 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
11+2.02 EUR
100+1.36 EUR
500+1.06 EUR
1000+0.98 EUR
2000+0.89 EUR
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BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 20A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 867 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.24 EUR
15+1.4 EUR
100+0.93 EUR
500+0.73 EUR
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BSZ123N08NS3GATMA1 BSZ123N08NS3G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e5ec96fdc0a00
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 36285 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.39 EUR
10+2.17 EUR
100+1.46 EUR
500+1.15 EUR
1000+1.07 EUR
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KP125 KP125_V1+0_DS_Rev2+14.pdf
Hersteller: Infineon Technologies
Description: IC PRESSURE SENSOR BAROM DSOF-8
Produkt ist nicht verfügbar
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KP125 KP125_V1+0_DS_Rev2+14.pdf
Hersteller: Infineon Technologies
Description: IC PRESSURE SENSOR BAROM DSOF-8
Produkt ist nicht verfügbar
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IR2151SPBF description ir2151.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 125mA, 250mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY7C1041DV33-10BVJXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Obsolete
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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