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IRGB4062DPBF IRGB4062DPBF Infineon Technologies IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf description Description: IGBT TRENCH 600V 48A TO-220AB
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Obsolete
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
IGBT Type: Trench
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRFS3607PBF IRFS3607PBF Infineon Technologies irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRS21953SPBF IRS21953SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF BRD/LOW 16SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 500mA, 500mA
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge, Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 25ns
Supplier Device Package: 16-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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PVDZ172NPBF PVDZ172NPBF Infineon Technologies pvdz172.pdf?fileId=5546d462533600a401535683ba592934 description Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1.5 A
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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IRL3715ZCSTRLP IRL3715ZCSTRLP Infineon Technologies irl3715zcspbf.pdf Description: MOSFET N-CH 20V 50A D2PAK
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IRL2703STRLPBF IRL2703STRLPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 30V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3805L-7PPBF IRF3805L-7PPBF Infineon Technologies IRSDS18836-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
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PVG612PBF PVG612PBF Infineon Technologies pvg612.pdf?fileId=5546d462533600a401535683c1892937 Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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IRL3714STRLPBF IRL3714STRLPBF Infineon Technologies IRL3714(S,L)PbF.pdf Description: MOSFET N-CH 20V 36A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
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IR2125PBF IR2125PBF Infineon Technologies infineon-ir2125-ds-en.pdf Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 0V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 43ns, 26ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
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PVR2300NPBF PVR2300NPBF Infineon Technologies PVR33N%20(PbF).pdf Description: SSR RELAY DPST-NO 165MA 0-200V
Voltage - Load: 0 V ~ 200 V
Part Status: Obsolete
Supplier Device Package: 16-DIP
Load Current: 165 mA
Termination Style: PC Pin
Circuit: DPST-NO (2 Form A) x 2
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Packaging: Tube
On-State Resistance (Max): 24 Ohms
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IPS7071GPBF IPS7071GPBF Infineon Technologies IPS7071GPbF_6-24-07.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Auto Restart
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
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IRFI4229PBF IRFI4229PBF Infineon Technologies irfi4229pbf.pdf?fileId=5546d462533600a40153562416651f80 Description: MOSFET N-CH 250V 19A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PVA1352NSPBF PVA1352NSPBF Infineon Technologies infineon-pva13n-datasheet-en.pdf Description: SSR RELAY SPST-NO 375MA 0-100V
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Part Status: Active
Supplier Device Package: 8-SMD
Load Current: 375 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
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IRS2092SPBF IRS2092SPBF Infineon Technologies IRS2092.pdf description Description: IC AUDIO AMP D 16-SOIC
Packaging: Tube
Features: Depop, Short-Circuit Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Discontinued at Digi-Key
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IRL3714ZSTRLPBF IRL3714ZSTRLPBF Infineon Technologies IRL3714Z(S,L)PbF.pdf Description: MOSFET N-CH 20V 36A D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
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PVI5033RSPBF PVI5033RSPBF Infineon Technologies IRSDS10627-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 3.75KV 2CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 40 mA
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IRL3715STRLPBF IRL3715STRLPBF Infineon Technologies IRL3715%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 54A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3704ZSTRLPBF IRF3704ZSTRLPBF Infineon Technologies irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929 Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRL3302STRLPBF IRL3302STRLPBF Infineon Technologies IRL3302SPbF.pdf Description: MOSFET N-CH 20V 39A D2PAK
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IRF520NSTRLPBF IRF520NSTRLPBF Infineon Technologies irf520nspbf.pdf Description: MOSFET N-CH 100V 9.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRF3704ZCSTRLP IRF3704ZCSTRLP Infineon Technologies irf3704zcspbf.pdf Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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PVAZ172NPBF PVAZ172NPBF Infineon Technologies pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4 Description: SSR RELAY SPST-NO 1A 0-60V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 8-DIP Modified
Load Current: 1 A
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
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IRFZ24NSTRLPBF IRFZ24NSTRLPBF Infineon Technologies irfz24nspbf.pdf?fileId=5546d462533600a40153563affb821f9 Description: MOSFET N-CH 55V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IRLML5203TRPBF IRLML5203TRPBF Infineon Technologies infineon-irlml5203-datasheet-en.pdf Description: MOSFET P-CH 30V 3A MICRO3/SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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IRF3707ZCSTRLP IRF3707ZCSTRLP Infineon Technologies IRF3707ZC(S,L)PbF.pdf Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3707ZSTRLP IRF3707ZSTRLP Infineon Technologies irf3707zpbf.pdf?fileId=5546d462533600a4015355df74821938 Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFZ48VSTRLPBF IRFZ48VSTRLPBF Infineon Technologies irfz48vspbf.pdf?fileId=5546d462533600a40153563ed0e42237 Description: MOSFET N-CH 60V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
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IRLZ34NSTRLPBF IRLZ34NSTRLPBF Infineon Technologies irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Description: MOSFET N-CH 55V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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2400+1.11 EUR
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IRFZ34NSTRLPBF IRFZ34NSTRLPBF Infineon Technologies irfz34nspbf.pdf?fileId=5546d462533600a40153563b1a522202 Description: MOSFET N-CH 55V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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IRF3711ZSTRLPBF IRF3711ZSTRLPBF Infineon Technologies IRF3711ZP,ZS,ZL,PbF.pdf Description: MOSFET N-CH 20V 92A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3711ZCSTRLP IRF3711ZCSTRLP Infineon Technologies irf3711zcspbf.pdf Description: MOSFET N-CH 20V 92A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IRL3102STRLPBF IRL3102STRLPBF Infineon Technologies IRL3102SPbF.pdf Description: MOSFET N-CH 20V 61A D2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
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IRF3708STRLPBF IRF3708STRLPBF Infineon Technologies irf3708pbf.pdf?fileId=5546d462533600a4015355df7cf5193c Description: MOSFET N-CH 30V 62A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
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IRL3402STRLPBF IRL3402STRLPBF Infineon Technologies IRL3402S.pdf Description: MOSFET N-CH 20V 85A D2PAK
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IRL8113STRLPBF IRL8113STRLPBF Infineon Technologies IRL8113(S,L)PbF.pdf Description: MOSFET N-CH 30V 105A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF9Z24NSTRLPBF IRF9Z24NSTRLPBF Infineon Technologies Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Description: MOSFET P-CH 55V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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IRF9530NSTRLPBF IRF9530NSTRLPBF Infineon Technologies irf9530nspbf.pdf?fileId=5546d462533600a401535611c2011dc3 Description: MOSFET P-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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IRL5602STRLPBF IRL5602STRLPBF Infineon Technologies IRL5602SPbF.pdf Description: MOSFET P-CH 20V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
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IRF3706STRLPBF IRF3706STRLPBF Infineon Technologies IRF3706(S,L)PbF.pdf Description: MOSFET N-CH 20V 77A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRL3303STRLPBF IRL3303STRLPBF Infineon Technologies IRL3303(L,S)PbF.pdf Description: MOSFET N-CH 30V 38A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3707STRLPBF IRF3707STRLPBF Infineon Technologies IRF3707%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
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IRF6215STRLPBF IRF6215STRLPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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IRGS8B60KTRLPBF IRGS8B60KTRLPBF Infineon Technologies IRG%28B%2CS%2CSL%298B60KPbF.pdf Description: IGBT 600V 28A 167W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 167 W
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IRLZ44ZSTRLPBF IRLZ44ZSTRLPBF Infineon Technologies irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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IRF5800TRPBF IRF5800TRPBF Infineon Technologies IRF5800PbF.pdf Description: MOSFET P-CH 30V 4A MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
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IRLR4343TRPBF IRLR4343TRPBF Infineon Technologies IRL%28R%2CU%294343%28-701%29PbF.pdf Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
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IRFZ44ESTRLPBF IRFZ44ESTRLPBF Infineon Technologies irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208 Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Produkt ist nicht verfügbar
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IRF5801TRPBF IRF5801TRPBF Infineon Technologies irf5801pbf.pdf?fileId=5546d462533600a4015355e3be0919ac Description: MOSFET N-CH 200V 600MA MICRO6
Part Status: Active
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 3000 Stücke:
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IRF5802TRPBF IRF5802TRPBF Infineon Technologies irf5802pbf.pdf?fileId=5546d462533600a4015355e3d4d319b2 Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
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9000+0.27 EUR
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IRLBD59N04ETRLP Infineon Technologies irlbd59n04e.pdf Description: MOSFET N-CH 40V 59A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Produkt ist nicht verfügbar
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IRF5804TRPBF IRF5804TRPBF Infineon Technologies IRF5804PbF.pdf Description: MOSFET P-CH 40V 2.5A MICRO6
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3709ZSTRLPBF IRF3709ZSTRLPBF Infineon Technologies IRF3709Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 87A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF9540NSTRLPBF IRF9540NSTRLPBF Infineon Technologies irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca description Description: MOSFET P-CH 100V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 18400 Stücke:
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800+1.2 EUR
2400+1.06 EUR
Mindestbestellmenge: 800 Stücke
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IRLL024ZTRPBF IRLL024ZTRPBF Infineon Technologies irll024zpbf.pdf?fileId=5546d462533600a4015356644e0225d5 Description: MOSFET N-CH 55V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.52 EUR
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IRL3502STRLPBF IRL3502STRLPBF Infineon Technologies IRL3502SPbF.pdf Description: MOSFET N-CH 20V 110A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Produkt ist nicht verfügbar
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IRF3315STRLPBF IRF3315STRLPBF Infineon Technologies irf3315spbf.pdf Description: MOSFET N-CH 150V 21A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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IRL1104STRLPBF IRL1104STRLPBF Infineon Technologies IRL1104(S,L)PbF.pdf Description: MOSFET N-CH 40V 104A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF540ZSTRLPBF IRF540ZSTRLPBF Infineon Technologies IRF540Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS17N20DTRLP IRFS17N20DTRLP Infineon Technologies irfb17n20dpbf.pdf Description: MOSFET N-CH 200V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRGB4062DPBF description IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf
IRGB4062DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-220AB
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Obsolete
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
IGBT Type: Trench
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRFS3607PBF irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176
IRFS3607PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Produkt ist nicht verfügbar
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IRS21953SPBF fundamentals-of-power-semiconductors
IRS21953SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF BRD/LOW 16SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 500mA, 500mA
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge, Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 25ns
Supplier Device Package: 16-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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PVDZ172NPBF description pvdz172.pdf?fileId=5546d462533600a401535683ba592934
PVDZ172NPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1.5 A
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.89 EUR
10+12.38 EUR
25+11.82 EUR
50+11.41 EUR
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250+10.53 EUR
500+10.16 EUR
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IRL3715ZCSTRLP irl3715zcspbf.pdf
IRL3715ZCSTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 50A D2PAK
Produkt ist nicht verfügbar
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IRL2703STRLPBF Part_Number_Guide_Web.pdf
IRL2703STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3805L-7PPBF IRSDS18836-1.pdf?t.download=true&u=5oefqw
IRF3805L-7PPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
Produkt ist nicht verfügbar
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PVG612PBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
PVG612PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 7338 Stücke:
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2+15.29 EUR
10+13.63 EUR
25+13.01 EUR
50+12.55 EUR
100+12.13 EUR
250+11.58 EUR
500+11.19 EUR
1000+10.79 EUR
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IRL3714STRLPBF IRL3714(S,L)PbF.pdf
IRL3714STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
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IR2125PBF infineon-ir2125-ds-en.pdf
IR2125PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 0V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 43ns, 26ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
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3+8.4 EUR
10+6.38 EUR
50+5.57 EUR
100+5.32 EUR
250+5.06 EUR
500+4.89 EUR
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PVR2300NPBF PVR33N%20(PbF).pdf
PVR2300NPBF
Hersteller: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-200V
Voltage - Load: 0 V ~ 200 V
Part Status: Obsolete
Supplier Device Package: 16-DIP
Load Current: 165 mA
Termination Style: PC Pin
Circuit: DPST-NO (2 Form A) x 2
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Packaging: Tube
On-State Resistance (Max): 24 Ohms
Produkt ist nicht verfügbar
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IPS7071GPBF IPS7071GPbF_6-24-07.pdf
IPS7071GPBF
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Auto Restart
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Produkt ist nicht verfügbar
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IRFI4229PBF irfi4229pbf.pdf?fileId=5546d462533600a40153562416651f80
IRFI4229PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 19A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.02 EUR
50+5.57 EUR
100+4.77 EUR
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PVA1352NSPBF infineon-pva13n-datasheet-en.pdf
PVA1352NSPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Part Status: Active
Supplier Device Package: 8-SMD
Load Current: 375 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
auf Bestellung 2618 Stücke:
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AnzahlPrivatkunde
2+14.08 EUR
10+12.55 EUR
25+11.98 EUR
50+11.58 EUR
100+11.17 EUR
250+10.67 EUR
500+10.31 EUR
1000+9.95 EUR
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IRS2092SPBF description IRS2092.pdf
IRS2092SPBF
Hersteller: Infineon Technologies
Description: IC AUDIO AMP D 16-SOIC
Packaging: Tube
Features: Depop, Short-Circuit Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRL3714ZSTRLPBF IRL3714Z(S,L)PbF.pdf
IRL3714ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Produkt ist nicht verfügbar
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PVI5033RSPBF IRSDS10627-1.pdf?t.download=true&u=5oefqw
PVI5033RSPBF
Hersteller: Infineon Technologies
Description: OPTOISO 3.75KV 2CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 40 mA
auf Bestellung 971 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.13 EUR
50+14.97 EUR
100+14.26 EUR
500+12.99 EUR
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IRL3715STRLPBF IRL3715%28S%2CL%29PbF.pdf
IRL3715STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3704ZSTRLPBF irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929
IRF3704ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRL3302STRLPBF IRL3302SPbF.pdf
IRL3302STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 39A D2PAK
Produkt ist nicht verfügbar
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IRF520NSTRLPBF irf520nspbf.pdf
IRF520NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IRF3704ZCSTRLP irf3704zcspbf.pdf
IRF3704ZCSTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PVAZ172NPBF pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4
PVAZ172NPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 8-DIP Modified
Load Current: 1 A
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.49 EUR
10+25.37 EUR
25+24.23 EUR
50+23.4 EUR
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IRFZ24NSTRLPBF irfz24nspbf.pdf?fileId=5546d462533600a40153563affb821f9
IRFZ24NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IRLML5203TRPBF infineon-irlml5203-datasheet-en.pdf
IRLML5203TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3A MICRO3/SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3707ZCSTRLP IRF3707ZC(S,L)PbF.pdf
IRF3707ZCSTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3707ZSTRLP irf3707zpbf.pdf?fileId=5546d462533600a4015355df74821938
IRF3707ZSTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFZ48VSTRLPBF irfz48vspbf.pdf?fileId=5546d462533600a40153563ed0e42237
IRFZ48VSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
Produkt ist nicht verfügbar
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IRLZ34NSTRLPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
IRLZ34NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 23200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.26 EUR
2400+1.11 EUR
Mindestbestellmenge: 800 Stücke
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IRFZ34NSTRLPBF irfz34nspbf.pdf?fileId=5546d462533600a40153563b1a522202
IRFZ34NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.26 EUR
Mindestbestellmenge: 800 Stücke
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IRF3711ZSTRLPBF IRF3711ZP,ZS,ZL,PbF.pdf
IRF3711ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3711ZCSTRLP irf3711zcspbf.pdf
IRF3711ZCSTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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IRL3102STRLPBF IRL3102SPbF.pdf
IRL3102STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 61A D2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3708STRLPBF irf3708pbf.pdf?fileId=5546d462533600a4015355df7cf5193c
IRF3708STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 62A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Produkt ist nicht verfügbar
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IRL3402STRLPBF IRL3402S.pdf
IRL3402STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 85A D2PAK
Produkt ist nicht verfügbar
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IRL8113STRLPBF IRL8113(S,L)PbF.pdf
IRL8113STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 105A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF9Z24NSTRLPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
IRF9Z24NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9530NSTRLPBF irf9530nspbf.pdf?fileId=5546d462533600a401535611c2011dc3
IRF9530NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRL5602STRLPBF IRL5602SPbF.pdf
IRL5602STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Produkt ist nicht verfügbar
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IRF3706STRLPBF IRF3706(S,L)PbF.pdf
IRF3706STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 77A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRL3303STRLPBF IRL3303(L,S)PbF.pdf
IRL3303STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 38A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3707STRLPBF IRF3707%28S%2CL%29PbF.pdf
IRF3707STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6215STRLPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IRGS8B60KTRLPBF IRG%28B%2CS%2CSL%298B60KPbF.pdf
IRGS8B60KTRLPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 28A 167W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 167 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44ZSTRLPBF irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a
IRLZ44ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5800TRPBF IRF5800PbF.pdf
IRF5800TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 4A MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR4343TRPBF IRL%28R%2CU%294343%28-701%29PbF.pdf
IRLR4343TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Produkt ist nicht verfügbar
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IRFZ44ESTRLPBF irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208
IRFZ44ESTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF5801TRPBF irf5801pbf.pdf?fileId=5546d462533600a4015355e3be0919ac
IRF5801TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 600MA MICRO6
Part Status: Active
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
Mindestbestellmenge: 3000 Stücke
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IRF5802TRPBF irf5802pbf.pdf?fileId=5546d462533600a4015355e3d4d319b2
IRF5802TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
9000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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IRLBD59N04ETRLP irlbd59n04e.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 59A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF5804TRPBF IRF5804PbF.pdf
IRF5804TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 2.5A MICRO6
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF3709ZSTRLPBF IRF3709Z%28S%2CL%29PbF.pdf
IRF3709ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF9540NSTRLPBF description irf9540nspbf.pdf?fileId=5546d462533600a401535611d92a1dca
IRF9540NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 18400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.2 EUR
2400+1.06 EUR
Mindestbestellmenge: 800 Stücke
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IRLL024ZTRPBF irll024zpbf.pdf?fileId=5546d462533600a4015356644e0225d5
IRLL024ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.52 EUR
Mindestbestellmenge: 2500 Stücke
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IRL3502STRLPBF IRL3502SPbF.pdf
IRL3502STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Produkt ist nicht verfügbar
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IRF3315STRLPBF irf3315spbf.pdf
IRF3315STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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IRL1104STRLPBF IRL1104(S,L)PbF.pdf
IRL1104STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 104A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF540ZSTRLPBF IRF540Z%28S%2CL%29PbF.pdf
IRF540ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS17N20DTRLP irfb17n20dpbf.pdf
IRFS17N20DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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