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IRS2336JTRPBF IRS2336JTRPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF8736TRPBF IRF8736TRPBF Infineon Technologies irf8736pbf.pdf?fileId=5546d462533600a40153560d9e661d7f Description: MOSFET N-CH 30V 18A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 15 V
auf Bestellung 16000 Stücke:
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4000+0.8 EUR
8000+0.75 EUR
12000+0.72 EUR
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IRL1404ZSTRLPBF IRL1404ZSTRLPBF Infineon Technologies irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 4800 Stücke:
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800+1.43 EUR
1600+1.33 EUR
2400+1.27 EUR
4000+1.21 EUR
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IRF6724MTR1PBF IRF6724MTR1PBF Infineon Technologies irf6724mpbf.pdf?fileId=5546d462533600a4015355ed51a01a94 Description: MOSFET N-CH 30V 27A DIRECTFET
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IRF6726MTR1PBF IRF6726MTR1PBF Infineon Technologies irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98 Description: MOSFET N-CH 30V 32A DIRECTFET
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IRF6727MTR1PBF IRF6727MTR1PBF Infineon Technologies irf6727mpbf.pdf?fileId=5546d462533600a4015355ed6a331a9a Description: MOSFET N-CH 30V 32A DIRECTFET
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IRFR1018ETRPBF IRFR1018ETRPBF Infineon Technologies irfr1018epbf.pdf?fileId=5546d462533600a40153562d092f2042 Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.82 EUR
4000+0.76 EUR
6000+0.73 EUR
10000+0.69 EUR
14000+0.67 EUR
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IRFR3607TRPBF IRFR3607TRPBF Infineon Technologies infineon-irfr3607-datasheet-en.pdf Description: MOSFET N-CH 75V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
auf Bestellung 2000 Stücke:
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2000+1.01 EUR
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IRF8721TRPBF IRF8721TRPBF Infineon Technologies irf8721pbf.pdf?fileId=5546d462533600a40153560d86f61d79 Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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4000+0.44 EUR
8000+0.41 EUR
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IRF6775MTR1PBF IRF6775MTR1PBF Infineon Technologies irf6775mpbf.pdf?fileId=5546d462533600a4015355ed84751aa0 Description: MOSFET N-CH 150V 4.9A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1411 pF @ 25 V
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IRF6785MTR1PBF IRF6785MTR1PBF Infineon Technologies IRSDS09083-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 3.4A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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IRF6714MTR1PBF IRF6714MTR1PBF Infineon Technologies irf6714mpbf.pdf?fileId=5546d462533600a4015355ed04be1a80 Description: MOSFET N-CH 25V 29A DIRECTFET
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IRF6725MTR1PBF IRF6725MTR1PBF Infineon Technologies IRF6725M%28TR%29PBF.pdf Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IRF6674TR1PBF IRF6674TR1PBF Infineon Technologies irf6674pbf.pdf?fileId=5546d462533600a4015355ec9f0d1a66 Description: MOSFET N-CH 60V 13.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
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IRF6715MTR1PBF IRF6715MTR1PBF Infineon Technologies irf6715mpbf.pdf?fileId=5546d462533600a4015355ed0d221a82 Description: MOSFET N-CH 25V 34A DIRECTFET
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IRF8714TRPBF IRF8714TRPBF Infineon Technologies irf8714pbf.pdf?fileId=5546d462533600a40153560d6f0f1d71 Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.65 EUR
8000+0.6 EUR
12000+0.58 EUR
20000+0.55 EUR
28000+0.54 EUR
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IRF1010EZSTRLP IRF1010EZSTRLP Infineon Technologies irf1010ezpbf.pdf?fileId=5546d462533600a4015355da68861885 Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
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IRFR3806TRPBF IRFR3806TRPBF Infineon Technologies irfr3806pbf.pdf?fileId=5546d462533600a401535631e18720d9 Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.72 EUR
4000+0.67 EUR
6000+0.64 EUR
10000+0.61 EUR
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IRLR3114ZTRPBF IRLR3114ZTRPBF Infineon Technologies irlr3114zpbf.pdf?fileId=5546d462533600a40153566d002d268d Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.84 EUR
4000+0.78 EUR
6000+0.75 EUR
10000+0.71 EUR
14000+0.7 EUR
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IRF6710S2TR1PBF IRF6710S2TR1PBF Infineon Technologies irf6710s2pbf.pdf?fileId=5546d462533600a4015355ece3db1a78 Description: MOSFET N-CH 25V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Tape & Reel (TR)
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IRF8707TRPBF IRF8707TRPBF Infineon Technologies irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Description: MOSFET N-CH 30V 11A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IRFR3410TRLPBF IRFR3410TRLPBF Infineon Technologies irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090 Description: MOSFET N-CH 100V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IRF6722MTR1PBF IRF6722MTR1PBF Infineon Technologies irf6722mpbf.pdf?fileId=5546d462533600a4015355ed3c661a8e Description: MOSFET N-CH 30V 13A DIRECTFET
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IRF6722STR1PBF IRF6722STR1PBF Infineon Technologies IRF6722S(TR)PBF.pdf Description: MOSFET N-CH 30V 13A DIRECTFET
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IRF6721STR1PBF IRF6721STR1PBF Infineon Technologies IRF6721S%28TR%29PBF.pdf Description: MOSFET N-CH 30V 14A DIRECTFET
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Produkt ist nicht verfügbar
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IRL3103D1STRLP IRL3103D1STRLP Infineon Technologies irl3103d1spbf.pdf Description: MOSFET N-CH 30V 64A D2PAK
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Produkt ist nicht verfügbar
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IRF1018ESTRLPBF IRF1018ESTRLPBF Infineon Technologies infineon-irf1018e-datasheet-en.pdf Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Produkt ist nicht verfügbar
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IRFS3607TRLPBF IRFS3607TRLPBF Infineon Technologies irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRLR8721TRPBF IRLR8721TRPBF Infineon Technologies IRLR8721PbF%2CIRLU8721PbF.pdf Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
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IRFS3806TRLPBF IRFS3806TRLPBF Infineon Technologies irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IPS6041STRLPBF IPS6041STRLPBF Infineon Technologies IPS6041%28G%2CR%2CS%29PbF.pdf Description: IC SWITCH IPS 1CH HI SIDE D2PAK
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPS7081RTRLPBF IPS7081RTRLPBF Infineon Technologies IPS7081%28R%2CS%29PbF.pdf Description: IC SWITCH IPS 1CH HI SIDE DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Number of Outputs: 1
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Current - Output (Max): 2.3A
Supplier Device Package: DPAK-5
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IPS7081STRLPBF IPS7081STRLPBF Infineon Technologies IPS7081%28R%2CS%29PbF.pdf Description: IC SWITCH IPS 1CH HI SIDE D2PAK
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Current - Output (Max): 2.3A
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 55mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Cut Tape (CT)
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IPS7091STRLPBF IPS7091STRLPBF Infineon Technologies IPS7091%28G%2CS%29PbF.pdf Description: IC SWITCH IPS 1CH HI SIDE D2PAK
Part Status: Obsolete
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Cut Tape (CT)
Current - Output (Max): 1.5A
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
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IR2132JTRPBF IR2132JTRPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
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10+9.94 EUR
25+9.21 EUR
100+8.4 EUR
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IRF1010EZSTRLP IRF1010EZSTRLP Infineon Technologies irf1010ezpbf.pdf?fileId=5546d462533600a4015355da68861885 Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
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IRF1018ESTRLPBF IRF1018ESTRLPBF Infineon Technologies infineon-irf1018e-datasheet-en.pdf Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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IRF3805STRLPBF IRF3805STRLPBF Infineon Technologies irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
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IRF6674TR1PBF IRF6674TR1PBF Infineon Technologies irf6674pbf.pdf?fileId=5546d462533600a4015355ec9f0d1a66 Description: MOSFET N-CH 60V 13.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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IRF6722MTR1PBF IRF6722MTR1PBF Infineon Technologies irf6722mpbf.pdf?fileId=5546d462533600a4015355ed3c661a8e Description: MOSFET N-CH 30V 13A DIRECTFET
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IRF6724MTR1PBF IRF6724MTR1PBF Infineon Technologies irf6724mpbf.pdf?fileId=5546d462533600a4015355ed51a01a94 Description: MOSFET N-CH 30V 27A DIRECTFET
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IRF6726MTR1PBF IRF6726MTR1PBF Infineon Technologies irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98 Description: MOSFET N-CH 30V 32A DIRECTFET
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IRF6775MTR1PBF IRF6775MTR1PBF Infineon Technologies irf6775mpbf.pdf?fileId=5546d462533600a4015355ed84751aa0 Description: MOSFET N-CH 150V 4.9A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1411 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
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IRF6785MTR1PBF IRF6785MTR1PBF Infineon Technologies IRSDS09083-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 3.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
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IRF7103QTRPBF IRF7103QTRPBF Infineon Technologies IRF7103QPBF-Datasheet.pdf description Description: MOSFET 2N-CH 50V 3A 8SO
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 50V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
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IRF7105QTRPBF IRF7105QTRPBF Infineon Technologies IRF7105QPbF.pdf Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Drain to Source Voltage (Vdss): 25V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7303QTRPBF IRF7303QTRPBF Infineon Technologies IRF7303QPbF.pdf Description: MOSFET 2N-CH 30V 4.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7304QTRPBF IRF7304QTRPBF Infineon Technologies IRF7304QPbF.pdf Description: MOSFET 2P-CH 20V 4.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7306QTRPBF IRF7306QTRPBF Infineon Technologies IRF7306QPbF.pdf Description: MOSFET 2P-CH 30V 3.6A 8SO
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
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IRF7309QTRPBF IRF7309QTRPBF Infineon Technologies IRF7309QPBF.pdf Description: MOSFET N/P-CH 30V 4A/3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7313QTRPBF IRF7313QTRPBF Infineon Technologies IRF7313QPbF.pdf Description: MOSFET 2N-CH 30V 6.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7314QTRPBF IRF7314QTRPBF Infineon Technologies IRF7314QPbF.pdf Description: MOSFET 2P-CH 20V 5.2A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRF7316QTRPBF IRF7316QTRPBF Infineon Technologies IRF7316QPbF.pdf Description: MOSFET 2P-CH 30V 4.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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IRF7341QTRPBF IRF7341QTRPBF Infineon Technologies IRF7341QPbF.pdf Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF7343QTRPBF IRF7343QTRPBF Infineon Technologies irf7343qpbf.pdf?fileId=5546d462533600a4015355f694211b75 Description: MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF7379QTRPBF IRF7379QTRPBF Infineon Technologies irf7379qpbf.pdf Description: MOSFET N/P-CH 30V 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRF7380QTRPBF IRF7380QTRPBF Infineon Technologies IRF7380QPbF.pdf Description: MOSFET 2N-CH 80V 3.6A 8SO
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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IRF7404QTRPBF IRF7404QTRPBF Infineon Technologies IRF7404QPbF.pdf Description: MOSFET P-CH 20V 6.7A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRF7413QTRPBF IRF7413QTRPBF Infineon Technologies IRF7413QPbF.pdf Description: MOSFET N-CH 30V 13A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRF7416QTRPBF IRF7416QTRPBF Infineon Technologies IRF7416QPbF.pdf Description: MOSFET P-CH 30V 10A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRS2336JTRPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS2336JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF8736TRPBF irf8736pbf.pdf?fileId=5546d462533600a40153560d9e661d7f
IRF8736TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 15 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.8 EUR
8000+0.75 EUR
12000+0.72 EUR
Mindestbestellmenge: 4000 Stücke
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IRL1404ZSTRLPBF irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5
IRL1404ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+1.43 EUR
1600+1.33 EUR
2400+1.27 EUR
4000+1.21 EUR
Mindestbestellmenge: 800 Stücke
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IRF6724MTR1PBF irf6724mpbf.pdf?fileId=5546d462533600a4015355ed51a01a94
IRF6724MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Produkt ist nicht verfügbar
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IRF6726MTR1PBF irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98
IRF6726MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Produkt ist nicht verfügbar
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IRF6727MTR1PBF irf6727mpbf.pdf?fileId=5546d462533600a4015355ed6a331a9a
IRF6727MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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IRFR1018ETRPBF irfr1018epbf.pdf?fileId=5546d462533600a40153562d092f2042
IRFR1018ETRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.82 EUR
4000+0.76 EUR
6000+0.73 EUR
10000+0.69 EUR
14000+0.67 EUR
Mindestbestellmenge: 2000 Stücke
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IRFR3607TRPBF infineon-irfr3607-datasheet-en.pdf
IRFR3607TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+1.01 EUR
Mindestbestellmenge: 2000 Stücke
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IRF8721TRPBF irf8721pbf.pdf?fileId=5546d462533600a40153560d86f61d79
IRF8721TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.44 EUR
8000+0.41 EUR
Mindestbestellmenge: 4000 Stücke
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IRF6775MTR1PBF irf6775mpbf.pdf?fileId=5546d462533600a4015355ed84751aa0
IRF6775MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 4.9A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1411 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6785MTR1PBF IRSDS09083-1.pdf?t.download=true&u=5oefqw
IRF6785MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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IRF6714MTR1PBF irf6714mpbf.pdf?fileId=5546d462533600a4015355ed04be1a80
IRF6714MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 29A DIRECTFET
Produkt ist nicht verfügbar
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IRF6725MTR1PBF IRF6725M%28TR%29PBF.pdf
IRF6725MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IRF6674TR1PBF irf6674pbf.pdf?fileId=5546d462533600a4015355ec9f0d1a66
IRF6674TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
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IRF6715MTR1PBF irf6715mpbf.pdf?fileId=5546d462533600a4015355ed0d221a82
IRF6715MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 34A DIRECTFET
Produkt ist nicht verfügbar
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IRF8714TRPBF irf8714pbf.pdf?fileId=5546d462533600a40153560d6f0f1d71
IRF8714TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.65 EUR
8000+0.6 EUR
12000+0.58 EUR
20000+0.55 EUR
28000+0.54 EUR
Mindestbestellmenge: 4000 Stücke
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IRF1010EZSTRLP irf1010ezpbf.pdf?fileId=5546d462533600a4015355da68861885
IRF1010EZSTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3806TRPBF irfr3806pbf.pdf?fileId=5546d462533600a401535631e18720d9
IRFR3806TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.72 EUR
4000+0.67 EUR
6000+0.64 EUR
10000+0.61 EUR
Mindestbestellmenge: 2000 Stücke
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IRLR3114ZTRPBF irlr3114zpbf.pdf?fileId=5546d462533600a40153566d002d268d
IRLR3114ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.84 EUR
4000+0.78 EUR
6000+0.75 EUR
10000+0.71 EUR
14000+0.7 EUR
Mindestbestellmenge: 2000 Stücke
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IRF6710S2TR1PBF irf6710s2pbf.pdf?fileId=5546d462533600a4015355ece3db1a78
IRF6710S2TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF8707TRPBF irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR3410TRLPBF irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090
IRFR3410TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRF6722MTR1PBF irf6722mpbf.pdf?fileId=5546d462533600a4015355ed3c661a8e
IRF6722MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET
Produkt ist nicht verfügbar
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IRF6722STR1PBF IRF6722S(TR)PBF.pdf
IRF6722STR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET
Produkt ist nicht verfügbar
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IRF6721STR1PBF IRF6721S%28TR%29PBF.pdf
IRF6721STR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Produkt ist nicht verfügbar
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IRL3103D1STRLP irl3103d1spbf.pdf
IRL3103D1STRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Produkt ist nicht verfügbar
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IRF1018ESTRLPBF infineon-irf1018e-datasheet-en.pdf
IRF1018ESTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Produkt ist nicht verfügbar
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IRFS3607TRLPBF irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176
IRFS3607TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+1.27 EUR
1600+1.17 EUR
Mindestbestellmenge: 800 Stücke
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IRLR8721TRPBF IRLR8721PbF%2CIRLU8721PbF.pdf
IRLR8721TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Produkt ist nicht verfügbar
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IRFS3806TRLPBF irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a
IRFS3806TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
auf Bestellung 13600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+1 EUR
1600+0.92 EUR
2400+0.88 EUR
4000+0.84 EUR
5600+0.81 EUR
8000+0.78 EUR
Mindestbestellmenge: 800 Stücke
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IPS6041STRLPBF IPS6041%28G%2CR%2CS%29PbF.pdf
IPS6041STRLPBF
Hersteller: Infineon Technologies
Description: IC SWITCH IPS 1CH HI SIDE D2PAK
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPS7081RTRLPBF IPS7081%28R%2CS%29PbF.pdf
IPS7081RTRLPBF
Hersteller: Infineon Technologies
Description: IC SWITCH IPS 1CH HI SIDE DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Number of Outputs: 1
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Current - Output (Max): 2.3A
Supplier Device Package: DPAK-5
Produkt ist nicht verfügbar
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IPS7081STRLPBF IPS7081%28R%2CS%29PbF.pdf
IPS7081STRLPBF
Hersteller: Infineon Technologies
Description: IC SWITCH IPS 1CH HI SIDE D2PAK
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Current - Output (Max): 2.3A
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 55mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPS7091STRLPBF IPS7091%28G%2CS%29PbF.pdf
IPS7091STRLPBF
Hersteller: Infineon Technologies
Description: IC SWITCH IPS 1CH HI SIDE D2PAK
Part Status: Obsolete
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Cut Tape (CT)
Current - Output (Max): 1.5A
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Produkt ist nicht verfügbar
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IR2132JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2132JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.88 EUR
10+9.94 EUR
25+9.21 EUR
100+8.4 EUR
250+8.01 EUR
Mindestbestellmenge: 2 Stücke
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IRF1010EZSTRLP irf1010ezpbf.pdf?fileId=5546d462533600a4015355da68861885
IRF1010EZSTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1018ESTRLPBF infineon-irf1018e-datasheet-en.pdf
IRF1018ESTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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IRF3805STRLPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
IRF3805STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.16 EUR
10+6.77 EUR
100+4.85 EUR
Mindestbestellmenge: 2 Stücke
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IRF6674TR1PBF irf6674pbf.pdf?fileId=5546d462533600a4015355ec9f0d1a66
IRF6674TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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IRF6722MTR1PBF irf6722mpbf.pdf?fileId=5546d462533600a4015355ed3c661a8e
IRF6722MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET
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IRF6724MTR1PBF irf6724mpbf.pdf?fileId=5546d462533600a4015355ed51a01a94
IRF6724MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
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IRF6726MTR1PBF irf6726mpbf.pdf?fileId=5546d462533600a4015355ed61db1a98
IRF6726MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
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IRF6775MTR1PBF irf6775mpbf.pdf?fileId=5546d462533600a4015355ed84751aa0
IRF6775MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 4.9A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1411 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
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IRF6785MTR1PBF IRSDS09083-1.pdf?t.download=true&u=5oefqw
IRF6785MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
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IRF7103QTRPBF description IRF7103QPBF-Datasheet.pdf
IRF7103QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8SO
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 50V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
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IRF7105QTRPBF IRF7105QPbF.pdf
IRF7105QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Drain to Source Voltage (Vdss): 25V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7303QTRPBF IRF7303QPbF.pdf
IRF7303QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7304QTRPBF IRF7304QPbF.pdf
IRF7304QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7306QTRPBF IRF7306QPbF.pdf
IRF7306QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 3.6A 8SO
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
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IRF7309QTRPBF IRF7309QPBF.pdf
IRF7309QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7313QTRPBF IRF7313QPbF.pdf
IRF7313QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7314QTRPBF IRF7314QPbF.pdf
IRF7314QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.2A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7316QTRPBF IRF7316QPbF.pdf
IRF7316QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.9A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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IRF7341QTRPBF IRF7341QPbF.pdf
IRF7341QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF7343QTRPBF irf7343qpbf.pdf?fileId=5546d462533600a4015355f694211b75
IRF7343QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF7379QTRPBF irf7379qpbf.pdf
IRF7379QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7380QTRPBF IRF7380QPbF.pdf
IRF7380QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 80V 3.6A 8SO
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SO
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IRF7404QTRPBF IRF7404QPbF.pdf
IRF7404QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 6.7A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7413QTRPBF IRF7413QPbF.pdf
IRF7413QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRF7416QTRPBF IRF7416QPbF.pdf
IRF7416QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 10A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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