Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124700) > Seite 112 nach 2079
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IRS21281STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IPS1041RTRLPBF | Infineon Technologies |
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 28V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.2A Ratio - Input:Output: 1:1 Supplier Device Package: TO-252AA (DPAK) Fault Protection: Current Limiting (Fixed), Over Temperature Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRS2336STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IR3629AMTRPBF | Infineon Technologies | Description: IC REG CTRLR DDR 1OUT 12MLPD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR3629MTRPBF | Infineon Technologies |
Description: IC REG CTRLR DDR 1OUT 12MLPDPackaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Voltage - Output: Adj to 0.6V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 4.5V ~ 14V Operating Temperature: -40°C ~ 125°C Applications: Controller, DDR Supplier Device Package: 12-MLPD (3x4) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2530DSTRPBF | Infineon Technologies |
Description: IC BALLAST CNTRL 115KHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 34.2kHz ~ 115kHz Type: Ballast Controller Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11.5V ~ 16.6V Supplier Device Package: 8-SOIC Dimming: Yes Current - Supply: 5 mA |
Produkt ist nicht verfügbar |
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IRF7750GTRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 20V 4.7A 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF7862TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 21A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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IR3507MTRPBF | Infineon Technologies |
Description: IC XPHASE3 CONTROL 20-MLPQPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 8V ~ 28V Applications: Processor Current - Supply: 4mA Supplier Device Package: 20-MLPQ (4x4) |
Produkt ist nicht verfügbar |
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IR3629AMTRPBF | Infineon Technologies | Description: IC REG CTRLR DDR 1OUT 12MLPD |
Produkt ist nicht verfügbar |
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IR3721MTRPBF | Infineon Technologies |
Description: IC POWER SUPPLY MONITOR 10-DFNCurrent - Supply: 350 µA Part Status: Obsolete Supplier Device Package: 10-DFN (3x3) DigiKey Programmable: Not Verified Applications: Power Supply Monitor Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 1712 Stücke: Lieferzeit 10-14 Tag (e) |
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IR3822AMTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJUSTABLE 6A PQFNVoltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 2.5V Voltage - Output (Max): 12V Synchronous Rectifier: Yes Supplier Device Package: PQFN (5x6) Topology: Buck Voltage - Input (Max): 21V Frequency - Switching: 300kHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 6A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 15-PowerVQFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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IRF7342QTRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 55V 3.4A 8SOPart Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3.4A Drain to Source Voltage (Vdss): 55V Power - Max: 2W Technology: MOSFET (Metal Oxide) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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IRF7750GTRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 20V 4.7A 8TSSOPPart Status: Obsolete Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4.7A Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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IRF7862TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 21A 8SOInput Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.35V @ 100µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 10249 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2092STRPBF | Infineon Technologies |
Description: IC AUDIO AMP D 16-SOICPackaging: Cut Tape (CT) Features: Depop, Short-Circuit Protection Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 18V Supplier Device Package: 16-SOIC Part Status: Active |
auf Bestellung 2488 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS21271STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 4975 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2127STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 12V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 11700 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS21281STRPBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IRFS3806PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 43A D2PAK |
Produkt ist nicht verfügbar |
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IRF1018ESPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 79A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFR3607PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 56A DPAKInput Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 4V @ 100µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar |
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IR1150IPBF | Infineon Technologies |
Description: IC PFC CTRLR CCM 200KHZ 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C Voltage - Supply: 15V ~ 20V Frequency - Switching: 200kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 8-PDIP Part Status: Obsolete Current - Startup: 175 µA |
Produkt ist nicht verfügbar |
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IRFI4019H-117P | Infineon Technologies |
Description: MOSFET 2N-CH 150V 8.7A TO220-5Packaging: Tube Package / Case: TO-220-5 Full Pack Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 18W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Supplier Device Package: TO-220-5 Full-Pak |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR1150PBF | Infineon Technologies |
Description: IC PFC CTRLR CCM 200KHZ 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C Voltage - Supply: 15V ~ 20V Frequency - Switching: 200kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 8-PDIP Part Status: Obsolete Current - Startup: 175 µA |
Produkt ist nicht verfügbar |
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IRF7521D1PBF | Infineon Technologies |
Description: MOSFET N-CH 20V 2.4A MICRO8Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: Micro8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRS2336JPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 44PLCCPackaging: Tube Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IRL3103D1SPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 64A D2PAKPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFB4233PBF | Infineon Technologies |
Description: MOSFET N-CH 230V 56A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 230 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V |
Produkt ist nicht verfügbar |
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IR2135PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28DIPPackaging: Tube Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Operating Temperature: 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-PDIP Rise / Fall Time (Typ): 90ns, 40ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PVD1352NPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 550MA 0-100VPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Output Type: DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 550 mA Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 8-DIP Modified Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 1.5 Ohms |
auf Bestellung 1747 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR3114ZPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 42A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRGSL6B60KPBF | Infineon Technologies |
Description: IGBT 600V 13A 90W TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: TO-262 IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
Produkt ist nicht verfügbar |
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IR2167PBF | Infineon Technologies |
Description: IC PFC/BALLAST CNTRL 47KHZ 20DIPPackaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Mounting Type: Through Hole Frequency: 41kHz ~ 47kHz Type: PFC/Ballast Controller Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10.4V ~ 16.5V Supplier Device Package: 20-PDIP Dimming: No Current - Supply: 10 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF5305LPBF | Infineon Technologies |
Description: MOSFET P-CH 55V 31A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF3704ZCLPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 67A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFI4024H-117P | Infineon Technologies |
Description: MOSFET 2N-CH 55V 11A TO220-5Packaging: Tube Package / Case: TO-220-5 Full Pack Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 14W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V Rds On (Max) @ Id, Vgs: 60mOhm @ 7.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-220-5 Full-Pak Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRL1404ZLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PVD1352NSPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 550MA 0-100VPackaging: Tube Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 550 mA Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 8-SMD Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 1.5 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF3805LPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 75A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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64-6006PBF | Infineon Technologies |
Description: MOSFET N-CH 300V 46A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF3805PBF | Infineon Technologies |
Description: MOSFET N-CH 55V 75A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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PVA1354NPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 375MA 0-100VPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 375 mA Approval Agency: UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 8-DIP Modified Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 5 Ohms |
auf Bestellung 1434 Stücke: Lieferzeit 10-14 Tag (e) |
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PVT312LPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 170MA 0-250VRelay Type: Photo-Coupled Relay (Photorelay) Voltage - Input: 1.2VDC Mounting Type: Through Hole Output Type: AC, DC Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Tube Approval Agency: UL Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 15 Ohms Voltage - Load: 0 V ~ 250 V Part Status: Active Supplier Device Package: 6-DIP Load Current: 170 mA Termination Style: PC Pin Circuit: SPST-NO (1 Form A) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9520NLPBF | Infineon Technologies |
Description: MOSFET P-CH 100V 6.8A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 550 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFP4229PBF | Infineon Technologies |
Description: MOSFET N-CH 250V 44A TO247ACPackage / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PVR3300NPBF | Infineon Technologies |
Description: SSR RELAY DPST-NO 165MA 0-300V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF7526D1PBF | Infineon Technologies |
Description: MOSFET P-CH 30V 2A MICRO8Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1440 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PVA3354NSPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 150MA 0-300VPackaging: Tube Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 150 mA Approval Agency: UL Supplier Device Package: 8-SMD Part Status: Active Voltage - Load: 0 V ~ 300 V On-State Resistance (Max): 24 Ohms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFS3207PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 170A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRS23364DSPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICDigiKey Programmable: Not Verified Part Status: Last Time Buy Current - Peak Output (Source, Sink): 200mA, 350mA Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 6 Driven Configuration: Half-Bridge Channel Type: 3-Phase Rise / Fall Time (Typ): 125ns, 50ns Supplier Device Package: 28-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 11.5V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFS4310ZPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 120A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRS2127PBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 12V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFU540ZPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 35A IPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR2153DPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 15.6V Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 80ns, 45ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRS20954SPBF | Infineon Technologies |
Description: IC LINE DRIVER 16SOICNumber of Channels: 2 Part Status: Obsolete Supplier Device Package: 16-SOIC Applications: Audio Systems Voltage - Supply: 10V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Interface: Analog Function: Line Driver Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF5210LPBF | Infineon Technologies |
Description: MOSFET P-CH 100V 38A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V Power Dissipation (Max): 3.1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRS2153DPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 15.4V Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 120ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 180mA, 260mA Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR21593PBF | Infineon Technologies |
Description: IC BALLAST CNTRL 230KHZ 16DIPCurrent - Supply: 10 mA Part Status: Obsolete Dimming: Yes Supplier Device Package: 16-DIP Voltage - Supply: 12V ~ 16.5V Operating Temperature: -40°C ~ 125°C Type: Ballast Controller Frequency: 30kHz ~ 230kHz Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PVD1354NPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 550MA 0-100VApproval Agency: UL Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 1.5 Ohms Voltage - Load: 0 V ~ 100 V Part Status: Active Supplier Device Package: 8-DIP Modified Load Current: 550 mA Termination Style: PC Pin Circuit: SPST-NO (1 Form A) Voltage - Input: 1.2VDC Mounting Type: Through Hole Output Type: DC Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Packaging: Tube |
auf Bestellung 1416 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRS21281STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS1041RTRLPBF |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252AA (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252AA (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2336STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR3629AMTRPBF |
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 1OUT 12MLPD
Description: IC REG CTRLR DDR 1OUT 12MLPD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR3629MTRPBF |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 1OUT 12MLPD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Voltage - Output: Adj to 0.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 14V
Operating Temperature: -40°C ~ 125°C
Applications: Controller, DDR
Supplier Device Package: 12-MLPD (3x4)
Description: IC REG CTRLR DDR 1OUT 12MLPD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Voltage - Output: Adj to 0.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.5V ~ 14V
Operating Temperature: -40°C ~ 125°C
Applications: Controller, DDR
Supplier Device Package: 12-MLPD (3x4)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.64 EUR |
| IRS2530DSTRPBF |
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Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 115KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 34.2kHz ~ 115kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 8-SOIC
Dimming: Yes
Current - Supply: 5 mA
Description: IC BALLAST CNTRL 115KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 34.2kHz ~ 115kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 8-SOIC
Dimming: Yes
Current - Supply: 5 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRF7750GTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 4.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7862TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V
Description: MOSFET N-CH 30V 21A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.71 EUR |
| IR3507MTRPBF |
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Hersteller: Infineon Technologies
Description: IC XPHASE3 CONTROL 20-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
Description: IC XPHASE3 CONTROL 20-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 28V
Applications: Processor
Current - Supply: 4mA
Supplier Device Package: 20-MLPQ (4x4)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR3629AMTRPBF |
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 1OUT 12MLPD
Description: IC REG CTRLR DDR 1OUT 12MLPD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR3721MTRPBF |
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Hersteller: Infineon Technologies
Description: IC POWER SUPPLY MONITOR 10-DFN
Current - Supply: 350 µA
Part Status: Obsolete
Supplier Device Package: 10-DFN (3x3)
DigiKey Programmable: Not Verified
Applications: Power Supply Monitor
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC POWER SUPPLY MONITOR 10-DFN
Current - Supply: 350 µA
Part Status: Obsolete
Supplier Device Package: 10-DFN (3x3)
DigiKey Programmable: Not Verified
Applications: Power Supply Monitor
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1712 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.19 EUR |
| 10+ | 3.88 EUR |
| 25+ | 3.55 EUR |
| 100+ | 3.19 EUR |
| 250+ | 3.01 EUR |
| 500+ | 2.9 EUR |
| 1000+ | 2.82 EUR |
| IR3822AMTRPBF |
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Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 6A PQFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: PQFN (5x6)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 15-PowerVQFN
Packaging: Cut Tape (CT)
Description: IC REG BUCK ADJUSTABLE 6A PQFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: PQFN (5x6)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 15-PowerVQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7342QTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 55V 3.4A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 55V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 55V 3.4A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 55V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7750GTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.7A 8TSSOP
Part Status: Obsolete
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 4.7A 8TSSOP
Part Status: Obsolete
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7862TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 21A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 10249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.57 EUR |
| 13+ | 1.67 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.84 EUR |
| 2000+ | 0.77 EUR |
| IRS2092STRPBF |
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Hersteller: Infineon Technologies
Description: IC AUDIO AMP D 16-SOIC
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Active
Description: IC AUDIO AMP D 16-SOIC
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.69 EUR |
| 10+ | 2.71 EUR |
| 25+ | 2.48 EUR |
| 100+ | 2.2 EUR |
| 250+ | 2.08 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.94 EUR |
| IRS21271STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 16+ | 1.33 EUR |
| 25+ | 1.2 EUR |
| 100+ | 1.06 EUR |
| 250+ | 0.99 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.92 EUR |
| IRS2127STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 11700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 16+ | 1.33 EUR |
| 25+ | 1.2 EUR |
| 100+ | 1.06 EUR |
| 250+ | 0.99 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.92 EUR |
| IRS21281STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3806PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
Description: MOSFET N-CH 60V 43A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF1018ESPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR3607PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 75V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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| IR1150IPBF |
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Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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| IRFI4019H-117P |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
Produkt ist nicht verfügbar
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| IR1150PBF |
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Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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| IRF7521D1PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 2.4A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
Description: MOSFET N-CH 20V 2.4A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
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| IRS2336JPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| IRL3103D1SPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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| IRFB4233PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 230V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 230 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
Description: MOSFET N-CH 230V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 230 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
Produkt ist nicht verfügbar
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| IR2135PBF |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| PVD1352NPBF |
![]() |
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 1747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.96 EUR |
| 10+ | 11.54 EUR |
| 25+ | 11.03 EUR |
| 50+ | 10.65 EUR |
| 100+ | 10.28 EUR |
| 250+ | 9.82 EUR |
| 500+ | 9.48 EUR |
| 1000+ | 9.16 EUR |
| IRLR3114ZPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Produkt ist nicht verfügbar
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| IRGSL6B60KPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 13A 90W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
Description: IGBT 600V 13A 90W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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| IR2167PBF |
![]() |
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CNTRL 47KHZ 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 41kHz ~ 47kHz
Type: PFC/Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.4V ~ 16.5V
Supplier Device Package: 20-PDIP
Dimming: No
Current - Supply: 10 mA
Description: IC PFC/BALLAST CNTRL 47KHZ 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 41kHz ~ 47kHz
Type: PFC/Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.4V ~ 16.5V
Supplier Device Package: 20-PDIP
Dimming: No
Current - Supply: 10 mA
Produkt ist nicht verfügbar
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| IRF5305LPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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| IRF3704ZCLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 67A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Description: MOSFET N-CH 20V 67A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IRFI4024H-117P |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 55V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 14W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 60mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
Description: MOSFET 2N-CH 55V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 14W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 60mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
Produkt ist nicht verfügbar
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| IRL1404ZLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PVD1352NSPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
Produkt ist nicht verfügbar
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| IRF3805LPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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| 64-6006PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V
Description: MOSFET N-CH 300V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V
Produkt ist nicht verfügbar
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| IRF3805PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.32 EUR |
| 10+ | 5.51 EUR |
| PVA1354NPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 375 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 375 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
auf Bestellung 1434 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.26 EUR |
| 10+ | 14.48 EUR |
| 25+ | 13.83 EUR |
| 50+ | 13.35 EUR |
| 100+ | 12.89 EUR |
| 250+ | 12.3 EUR |
| 500+ | 11.89 EUR |
| 1000+ | 11.48 EUR |
| PVT312LPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Relay Type: Photo-Coupled Relay (Photorelay)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 15 Ohms
Voltage - Load: 0 V ~ 250 V
Part Status: Active
Supplier Device Package: 6-DIP
Load Current: 170 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Description: SSR RELAY SPST-NO 170MA 0-250V
Relay Type: Photo-Coupled Relay (Photorelay)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 15 Ohms
Voltage - Load: 0 V ~ 250 V
Part Status: Active
Supplier Device Package: 6-DIP
Load Current: 170 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.04 EUR |
| 10+ | 8.06 EUR |
| 25+ | 7.7 EUR |
| 50+ | 7.43 EUR |
| 100+ | 7.18 EUR |
| 250+ | 6.85 EUR |
| 500+ | 6.62 EUR |
| IRF9520NLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 6.8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET P-CH 100V 6.8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 550 Stücke
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| IRFP4229PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 44A TO247AC
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 250V 44A TO247AC
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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| PVR3300NPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-300V
Description: SSR RELAY DPST-NO 165MA 0-300V
Produkt ist nicht verfügbar
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| IRF7526D1PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 2A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Description: MOSFET P-CH 30V 2A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1440 Stücke
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| PVA3354NSPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRFS3207PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 170A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 75V 170A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS23364DSPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4310ZPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
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| IRS2127PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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| IRFU540ZPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A IPAK
Description: MOSFET N-CH 100V 35A IPAK
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| IR2153DPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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| IRS20954SPBF |
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Hersteller: Infineon Technologies
Description: IC LINE DRIVER 16SOIC
Number of Channels: 2
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Applications: Audio Systems
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Interface: Analog
Function: Line Driver
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC LINE DRIVER 16SOIC
Number of Channels: 2
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Applications: Audio Systems
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Interface: Analog
Function: Line Driver
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| IRF5210LPBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 38A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Description: MOSFET P-CH 100V 38A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
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| IRS2153DPBF |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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| IR21593PBF |
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Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 230KHZ 16DIP
Current - Supply: 10 mA
Part Status: Obsolete
Dimming: Yes
Supplier Device Package: 16-DIP
Voltage - Supply: 12V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 30kHz ~ 230kHz
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC BALLAST CNTRL 230KHZ 16DIP
Current - Supply: 10 mA
Part Status: Obsolete
Dimming: Yes
Supplier Device Package: 16-DIP
Voltage - Supply: 12V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 30kHz ~ 230kHz
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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| PVD1354NPBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 100 V
Part Status: Active
Supplier Device Package: 8-DIP Modified
Load Current: 550 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
Description: SSR RELAY SPST-NO 550MA 0-100V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 100 V
Part Status: Active
Supplier Device Package: 8-DIP Modified
Load Current: 550 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
auf Bestellung 1416 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.4 EUR |
| 10+ | 13.7 EUR |
| 25+ | 13.09 EUR |
| 50+ | 12.64 EUR |
| 100+ | 12.2 EUR |
| 250+ | 11.65 EUR |
| 500+ | 11.25 EUR |
| 1000+ | 10.86 EUR |
































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