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ESD0P2RF02LSE6327XTSA1 ESD0P2RF02LSE6327XTSA1 Infineon Technologies ESD0P2RF.pdf Description: TVS DIODE 5.3VWM 21VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Produkt ist nicht verfügbar
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 Infineon Technologies bas3007aseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a3043156fd5730115a286aa19083b Description: BRIDGE RECT 1P 30V 900MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 900 mA
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10514 Stücke:
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20+0.88 EUR
27+0.66 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 20
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 Infineon Technologies bas4002aseries.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304329a0f6ee0129a6dc9f802b68 Description: BRIDGE RECT 1P 40V 200MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 200 mA
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4126 Stücke:
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22+0.83 EUR
33+0.54 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
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BC817K25E6327HTSA1 BC817K25E6327HTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 73351 Stücke:
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30+0.60 EUR
43+0.41 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
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BGA622E6820HTSA1 BGA622E6820HTSA1 Infineon Technologies BGA622.pdf Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BCX 55-16 E6327 BCX 55-16 E6327 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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BDP947E6327HTSA1 BDP947E6327HTSA1 Infineon Technologies bdp947_bdp949_bdp953.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156147b63b1f55 Description: TRANS NPN 45V 3A PG-SOT223-4-10
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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BDP949E6327HTSA1 BDP949E6327HTSA1 Infineon Technologies bdp947_bdp949_bdp953.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156147b63b1f55 Description: TRANS NPN 60V 3A PG-SOT223-4-10
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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BFP 182 E7764 BFP 182 E7764 Infineon Technologies BFP182.pdf Description: RF TRANS NPN 12V 8GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
53+0.34 EUR
60+0.30 EUR
100+0.25 EUR
250+0.23 EUR
Mindestbestellmenge: 36
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BFP182WE6327HTSA1 BFP182WE6327HTSA1 Infineon Technologies INFNS10735-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 BFP183E7764HTSA1 Infineon Technologies Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907 Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
auf Bestellung 13716 Stücke:
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46+0.39 EUR
68+0.26 EUR
76+0.23 EUR
100+0.20 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 46
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BFP193E6327HTSA1 BFP193E6327HTSA1 Infineon Technologies bfp193.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142674fdc3061b Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
auf Bestellung 9369 Stücke:
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48+0.37 EUR
69+0.26 EUR
77+0.23 EUR
100+0.20 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 48
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BFP193WE6327HTSA1 BFP193WE6327HTSA1 Infineon Technologies bfp193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142678c81e061f Description: RF TRANS NPN 12V 8GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 20.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP196E6327HTSA1 BFP196E6327HTSA1 Infineon Technologies Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723 Description: RF TRANS NPN 12V 7.5GHZ SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
auf Bestellung 10396 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
76+0.23 EUR
86+0.21 EUR
100+0.18 EUR
250+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 53
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BFR181E6327HTSA1 BFR181E6327HTSA1 Infineon Technologies bfr181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268848380638 Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
auf Bestellung 5871 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
30+0.59 EUR
34+0.53 EUR
100+0.37 EUR
250+0.31 EUR
500+0.25 EUR
1000+0.19 EUR
Mindestbestellmenge: 23
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BFR 181W E6327 BFR 181W E6327 Infineon Technologies bfr181w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268dc6c1063f Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
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BFR182E6327HTSA1 BFR182E6327HTSA1 Infineon Technologies bfr182.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268f4d130640 Description: RF TRANS NPN 12V 8GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 10287 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
65+0.27 EUR
74+0.24 EUR
100+0.21 EUR
250+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 44
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BFR 182W E6327 BFR 182W E6327 Infineon Technologies bfr182w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114269d1e43064c Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
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BFR 183W E6327 BFR 183W E6327 Infineon Technologies BFR183W.pdf Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
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BFR193E6327HTSA1 BFR193E6327HTSA1 Infineon Technologies bfr193.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426adab31066c Description: RF TRANS NPN 12V 8GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 20412 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
90+0.20 EUR
103+0.17 EUR
120+0.15 EUR
250+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 59
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BFR 193W E6327 BFR 193W E6327 Infineon Technologies bfr193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426b3b6650674 Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Produkt ist nicht verfügbar
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KIT TVS DIODE 2 KIT TVS DIODE 2 Infineon Technologies fundamentals-of-power-semiconductors Description: KIT SAMPLE TVS FOR RF/ANT PROT
Packaging: Box
Mounting Type: Surface Mount
Quantity: 112 Pieces (8 Values - Mixed Quantities)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 70V
Produkt ist nicht verfügbar
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KITTVSDIODE1TOBO1 KITTVSDIODE1TOBO1 Infineon Technologies fundamentals-of-power-semiconductors Description: KIT SAMPLE TVS FOR HS APPLCTN
Packaging: Box
Mounting Type: Surface Mount
Quantity: 96 Pieces (6 Values - 16 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 14.5V
Produkt ist nicht verfügbar
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SP000410812 SP000410812 Infineon Technologies Description: KIT SAMPLE FOR CURRENT TO 3A
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SP000410810 SP000410810 Infineon Technologies Description: KIT SAMPLE FOR MIX/DETECT PWRLVL
Produkt ist nicht verfügbar
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SP000410804 SP000410804 Infineon Technologies Description: KIT SAMPLE FOR GEN PURP RF TRANS
Produkt ist nicht verfügbar
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SP000410802 SP000410802 Infineon Technologies Description: KIT SAMPLE FOR HIGH END SI/SIGE
Produkt ist nicht verfügbar
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KIT RF DIODE 2 KIT RF DIODE 2 Infineon Technologies Description: KIT SAMPLE RF FOR RF APPLICTN
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SP000410806 SP000410806 Infineon Technologies Description: KIT SAMPLE RF FOR RF SWITCHING
Produkt ist nicht verfügbar
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KIT MMIC GP KIT MMIC GP Infineon Technologies Description: KIT SAMPLE FOR GEN PURP MMIC LNA
auf Bestellung 8 Stücke:
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1+20.68 EUR
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SP000463270 SP000463270 Infineon Technologies fundamentals-of-power-semiconductors Description: KIT SAMPLE FOR GPS APPLICATIONS
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (15 Values - Mixed Quantities)
Kit Type: RF
Produkt ist nicht verfügbar
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SP000410854 SP000410854 Infineon Technologies Description: KIT SAMPLE FOR DGTL TRANS 500MA
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SP000410852 SP000410852 Infineon Technologies Description: KIT SAMPLE DGTL DL TRANS 100MA
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SP000410856 SP000410856 Infineon Technologies Description: KIT SAMPLE FOR LED DRIVERS
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SP000410842 SP000410842 Infineon Technologies Part_Number_Guide_Web.pdf Description: KIT SAMPLE FOR HV/MULTI CHIP
Packaging: Box
Mounting Type: Surface Mount
Quantity: 140 Pieces (19 Values - Mixed Quantities)
Kit Type: Rectifier Diode
Part Status: Obsolete
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IRLS3036-7PPBF IRLS3036-7PPBF Infineon Technologies irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b description Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
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IRFS5620PBF IRFS5620PBF Infineon Technologies IRFS(L)5620.pdf Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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IRF6218STRLPBF IRF6218STRLPBF Infineon Technologies irf6218spbf.pdf?fileId=5546d462533600a4015355e79f5e19e2 Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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IR3831MTR1PBF IR3831MTR1PBF Infineon Technologies ir3831m.pdf?fileId=5546d462533600a4015355d1dae617c3 Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
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IR3840MTR1PBF IR3840MTR1PBF Infineon Technologies ir3840m.pdf?fileId=5546d462533600a4015355d2133317d1 Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IR3841MTR1PBF IR3841MTR1PBF Infineon Technologies ir3841m.pdf?fileId=5546d462533600a4015355d223a417d5 Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
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IR3842MTR1PBF IR3842MTR1PBF Infineon Technologies ir3842m.pdf?fileId=5546d462533600a4015355d5465d17e6 Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IR3831MTR1PBF IR3831MTR1PBF Infineon Technologies ir3831m.pdf?fileId=5546d462533600a4015355d1dae617c3 Description: IC REG CONV DDR 1OUT PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
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IR3842MTRPBF IR3842MTRPBF Infineon Technologies ir3842m.pdf?fileId=5546d462533600a4015355d5465d17e6 Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IR3841MTRPBF IR3841MTRPBF Infineon Technologies ir3841m.pdf?fileId=5546d462533600a4015355d223a417d5 Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IR3840MTRPBF IR3840MTRPBF Infineon Technologies ir3840m.pdf?fileId=5546d462533600a4015355d2133317d1 Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IR3831MTRPBF IR3831MTRPBF Infineon Technologies ir3831m.pdf?fileId=5546d462533600a4015355d1dae617c3 Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
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ESD0P2RF02LRHE6327XTSA1 ESD0P2RF02LRHE6327XTSA1 Infineon Technologies ESD0P2RF.pdf Description: TVS DIODE 5.3VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
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BTS500551TMBAKSA1 BTS500551TMBAKSA1 Infineon Technologies Infineon-BTS50055-1TMB-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9af94f035c9 Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 70A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Not For New Designs
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CY7C1250V18-333BZXC CY7C1250V18-333BZXC Infineon Technologies CY7C124x,5xV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
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CY7C1414JV18-250BZXC CY7C1414JV18-250BZXC Infineon Technologies CY7C1410,12,14,25JV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1426JV18-300BZC CY7C1426JV18-300BZC Infineon Technologies CY7C1411%2C13%2C15%2C26JV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
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CY7C1473BV33-133AXC CY7C1473BV33-133AXC Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CYD02S36V18-167BBC CYD02S36V18-167BBC Infineon Technologies Description: IC SRAM 2MBIT PARALLEL 256FBGA
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CYP15G0403DXB-BGXI CYP15G0403DXB-BGXI Infineon Technologies CYP,V,W15G0403DXB.pdf Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Function: Transceiver
Interface: LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 900mA
Supplier Device Package: 256-L2BGA (27x27)
Part Status: Obsolete
Number of Circuits: 4
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STK11C88-SF25 STK11C88-SF25 Infineon Technologies STK11C88.pdf Description: IC NVSRAM 256KBIT PAR 28SOIC
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STK12C68-5C55M STK12C68-5C55M Infineon Technologies STK12C68-5 (SMD5962-94599).pdf Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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STK12C68-5K35M STK12C68-5K35M Infineon Technologies STK12C68-5 (SMD5962-94599).pdf Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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STK12C68-C35I STK12C68-C35I Infineon Technologies STK12C68 RevC.pdf Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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STK12C68-C45 STK12C68-C45 Infineon Technologies STK12C68 RevC.pdf Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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ESD0P2RF02LSE6327XTSA1 ESD0P2RF.pdf
ESD0P2RF02LSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
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BAS3007ARPPE6327HTSA1 bas3007aseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a3043156fd5730115a286aa19083b
BAS3007ARPPE6327HTSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 30V 900MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 900 mA
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10514 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
27+0.66 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 20
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BAS4002ARPPE6327HTSA1 bas4002aseries.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304329a0f6ee0129a6dc9f802b68
BAS4002ARPPE6327HTSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 40V 200MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 200 mA
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
33+0.54 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 22
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BC817K25E6327HTSA1 4a-BC-817-40-E6433.pdf
BC817K25E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 73351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
43+0.41 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 30
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BGA622E6820HTSA1 BGA622.pdf
BGA622E6820HTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX 55-16 E6327 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX 55-16 E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 60V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BDP947E6327HTSA1 bdp947_bdp949_bdp953.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156147b63b1f55
BDP947E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 3A PG-SOT223-4-10
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BDP949E6327HTSA1 bdp947_bdp949_bdp953.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156147b63b1f55
BDP949E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 60V 3A PG-SOT223-4-10
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP 182 E7764 BFP182.pdf
BFP 182 E7764
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
53+0.34 EUR
60+0.30 EUR
100+0.25 EUR
250+0.23 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BFP182WE6327HTSA1 INFNS10735-1.pdf?t.download=true&u=5oefqw
BFP182WE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP183E7764HTSA1 Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907
BFP183E7764HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
auf Bestellung 13716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
68+0.26 EUR
76+0.23 EUR
100+0.20 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
BFP193E6327HTSA1 bfp193.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142674fdc3061b
BFP193E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
auf Bestellung 9369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
69+0.26 EUR
77+0.23 EUR
100+0.20 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BFP193WE6327HTSA1 bfp193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142678c81e061f
BFP193WE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 20.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP196E6327HTSA1 Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723
BFP196E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
auf Bestellung 10396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
76+0.23 EUR
86+0.21 EUR
100+0.18 EUR
250+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
BFR181E6327HTSA1 bfr181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268848380638
BFR181E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
auf Bestellung 5871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.59 EUR
34+0.53 EUR
100+0.37 EUR
250+0.31 EUR
500+0.25 EUR
1000+0.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BFR 181W E6327 bfr181w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268dc6c1063f
BFR 181W E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR182E6327HTSA1 bfr182.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268f4d130640
BFR182E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 10287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
65+0.27 EUR
74+0.24 EUR
100+0.21 EUR
250+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BFR 182W E6327 bfr182w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114269d1e43064c
BFR 182W E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR 183W E6327 BFR183W.pdf
BFR 183W E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR193E6327HTSA1 bfr193.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426adab31066c
BFR193E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 20412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
90+0.20 EUR
103+0.17 EUR
120+0.15 EUR
250+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
BFR 193W E6327 bfr193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426b3b6650674
BFR 193W E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIT TVS DIODE 2 fundamentals-of-power-semiconductors
KIT TVS DIODE 2
Hersteller: Infineon Technologies
Description: KIT SAMPLE TVS FOR RF/ANT PROT
Packaging: Box
Mounting Type: Surface Mount
Quantity: 112 Pieces (8 Values - Mixed Quantities)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 70V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KITTVSDIODE1TOBO1 fundamentals-of-power-semiconductors
KITTVSDIODE1TOBO1
Hersteller: Infineon Technologies
Description: KIT SAMPLE TVS FOR HS APPLCTN
Packaging: Box
Mounting Type: Surface Mount
Quantity: 96 Pieces (6 Values - 16 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 14.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP000410812
SP000410812
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR CURRENT TO 3A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP000410810
SP000410810
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR MIX/DETECT PWRLVL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP000410804
SP000410804
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR GEN PURP RF TRANS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP000410802
SP000410802
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR HIGH END SI/SIGE
Produkt ist nicht verfügbar
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KIT RF DIODE 2
KIT RF DIODE 2
Hersteller: Infineon Technologies
Description: KIT SAMPLE RF FOR RF APPLICTN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP000410806
SP000410806
Hersteller: Infineon Technologies
Description: KIT SAMPLE RF FOR RF SWITCHING
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KIT MMIC GP
KIT MMIC GP
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR GEN PURP MMIC LNA
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SP000463270 fundamentals-of-power-semiconductors
SP000463270
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR GPS APPLICATIONS
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (15 Values - Mixed Quantities)
Kit Type: RF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP000410854
SP000410854
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR DGTL TRANS 500MA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP000410852
SP000410852
Hersteller: Infineon Technologies
Description: KIT SAMPLE DGTL DL TRANS 100MA
Produkt ist nicht verfügbar
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SP000410856
SP000410856
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR LED DRIVERS
Produkt ist nicht verfügbar
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SP000410842 Part_Number_Guide_Web.pdf
SP000410842
Hersteller: Infineon Technologies
Description: KIT SAMPLE FOR HV/MULTI CHIP
Packaging: Box
Mounting Type: Surface Mount
Quantity: 140 Pieces (19 Values - Mixed Quantities)
Kit Type: Rectifier Diode
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3036-7PPBF description irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036-7PPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
Produkt ist nicht verfügbar
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IRFS5620PBF IRFS(L)5620.pdf
IRFS5620PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6218STRLPBF irf6218spbf.pdf?fileId=5546d462533600a4015355e79f5e19e2
IRF6218STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
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IR3831MTR1PBF ir3831m.pdf?fileId=5546d462533600a4015355d1dae617c3
IR3831MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
Produkt ist nicht verfügbar
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IR3840MTR1PBF ir3840m.pdf?fileId=5546d462533600a4015355d2133317d1
IR3840MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3841MTR1PBF ir3841m.pdf?fileId=5546d462533600a4015355d223a417d5
IR3841MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3842MTR1PBF ir3842m.pdf?fileId=5546d462533600a4015355d5465d17e6
IR3842MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3831MTR1PBF ir3831m.pdf?fileId=5546d462533600a4015355d1dae617c3
IR3831MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
Produkt ist nicht verfügbar
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IR3842MTRPBF ir3842m.pdf?fileId=5546d462533600a4015355d5465d17e6
IR3842MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3841MTRPBF ir3841m.pdf?fileId=5546d462533600a4015355d223a417d5
IR3841MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3840MTRPBF ir3840m.pdf?fileId=5546d462533600a4015355d2133317d1
IR3840MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3831MTRPBF ir3831m.pdf?fileId=5546d462533600a4015355d1dae617c3
IR3831MTRPBF
Hersteller: Infineon Technologies
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
Produkt ist nicht verfügbar
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ESD0P2RF02LRHE6327XTSA1 ESD0P2RF.pdf
ESD0P2RF02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Produkt ist nicht verfügbar
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BTS500551TMBAKSA1 Infineon-BTS50055-1TMB-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9af94f035c9
BTS500551TMBAKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 70A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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CY7C1250V18-333BZXC CY7C124x,5xV18.pdf
CY7C1250V18-333BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Produkt ist nicht verfügbar
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CY7C1414JV18-250BZXC CY7C1410,12,14,25JV18.pdf
CY7C1414JV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1426JV18-300BZC CY7C1411%2C13%2C15%2C26JV18.pdf
CY7C1426JV18-300BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1473BV33-133AXC download
CY7C1473BV33-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYD02S36V18-167BBC
CYD02S36V18-167BBC
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 256FBGA
Produkt ist nicht verfügbar
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CYP15G0403DXB-BGXI CYP,V,W15G0403DXB.pdf
CYP15G0403DXB-BGXI
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Function: Transceiver
Interface: LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 900mA
Supplier Device Package: 256-L2BGA (27x27)
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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STK11C88-SF25 STK11C88.pdf
STK11C88-SF25
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 28SOIC
Produkt ist nicht verfügbar
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STK12C68-5C55M STK12C68-5 (SMD5962-94599).pdf
STK12C68-5C55M
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK12C68-5K35M STK12C68-5 (SMD5962-94599).pdf
STK12C68-5K35M
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK12C68-C35I STK12C68 RevC.pdf
STK12C68-C35I
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK12C68-C45 STK12C68 RevC.pdf
STK12C68-C45
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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